CN212160679U

CN212160679U - Optical integrated device

Info

Publication number: CN212160679U
Application number: CN201922038099.5U
Authority: CN
Inventors: 董佳群; 林峰
Original assignee: Shenzhen Fushi Technology Co Ltd
Current assignee: Shenzhen Fushi Technology Co Ltd
Priority date: 2019-11-22
Filing date: 2019-11-22
Publication date: 2020-12-15
Anticipated expiration: 2029-11-22

Abstract

The application discloses an optical integrated device. The optical integrated device includes: the wafer comprises a plurality of first image sensing bare chips, wherein each first image sensing bare chip comprises a plurality of pixel units and is used for receiving light beams and converting the received light beams into corresponding electric signals so as to obtain fingerprint information of an external object; and the lens modules are arranged opposite to the first image sensing bare chips one by one. The lens module includes: a plurality of small lenses disposed on the first image sensing die, the plurality of small lenses being spaced apart from each other, each of the small lenses facing a plurality of the pixel units, the small lenses being for converging light beams to the pixel units; and the light shielding part is arranged on the first image sensing die, is positioned in the interval region among the small lenses and is used for shielding the light beams.

Description

Optical integrated device

Technical Field

The present application relates to the field of optoelectronic technologies, and in particular, to an optical integrated device with ultra-thin dimensions.

Background

With the technical progress and the improvement of living standard of people, users demand more functions and fashionable appearance for electronic equipment such as mobile phones, tablet computers and cameras. At present, the development trend of electronic devices such as mobile phones and the like is to have higher screen occupation ratio and have functions of fingerprint detection and the like. In order to realize a full screen or a screen close to the full screen effect, the electronic equipment has a high screen occupation ratio, and a fingerprint detection technology under the screen is developed. Since the internal space of electronic devices such as mobile phones is limited, and the imaging device using conventional lenses to realize optical imaging occupies a large space due to its large size and volume, it is necessary to provide a device for imaging with a small volume.

Disclosure of Invention

In view of the above, the present application provides an optical integrated device that can solve or improve the problems of the prior art.

The application provides an optical integrated device, includes:

the wafer comprises a plurality of first image sensing bare chips, wherein each first image sensing bare chip comprises a plurality of pixel units, and the pixel units are used for receiving light beams and converting the received light beams into corresponding electric signals so as to obtain fingerprint information of an external object; and

a plurality of lens modules disposed opposite to the plurality of first image sensing dies one-to-one, the lens modules comprising:

a plurality of small lenses disposed on the first image sensing die, the plurality of small lenses being spaced apart from each other, each of the small lenses facing a plurality of the pixel units, the small lenses being for converging light beams to the pixel units; and

and a light shielding part disposed on the first image sensing die, the light shielding part being located in a spacing region between the plurality of lenslets and being shorter in height than the lenslets or shorter than the lenslets but not shorter than 10 micrometers or more, the light shielding part being configured to shield a light beam.

In some embodiments, the optically integrated device further comprises:

and the filter layer is formed on the wafer and is used for transmitting the light beams with the target wave band to the plurality of first image sensing bare chips and filtering the light beams with a second preset wave band.

In some embodiments, the filter layer is formed between the wafer and the plurality of lens modules, or the filter layer is formed on a side of the plurality of lens modules facing away from the wafer.

In some embodiments, the second predetermined band is a band other than the target band.

In some embodiments, the predetermined wavelength band is visible light and the second predetermined wavelength band includes near infrared light.

In some embodiments, the filter layer is formed on the wafer by an evaporation process.

In some embodiments, the plurality of lenslets are formed on the wafer by an embossing process.

In some embodiments, the light shield layer includes barricade and light shield layer, the barricade be located the wafer with between the light shield layer, the light shield layer is used for sheltering from the light beam, wherein, the barricade with a plurality of small lenses become an organic whole for passing through the impression technology.

In some embodiments, a side surface of the first image sensor die for sensing light beams is defined as a photosensitive surface, wherein a maximum height from the light shielding portion to the photosensitive surface is higher than a maximum height from the lenslet to the photosensitive surface by any value from 5 micrometers to 10 micrometers.

In some embodiments, the pitch between adjacent lenslets is any number from 300 microns to 500 microns.

In some embodiments, the plurality of lenslets are arranged in an array, and the plurality of pixel elements are arranged in an array.

In some embodiments, an area of the plurality of pixel units in the first image sensor die, through which the light beams can be received through the lenslets, is defined as an effective photosensitive area, each effective photosensitive area respectively faces one of the lenslets, and the light beams through the lenslets converge to the effective photosensitive area facing the lenslet.

In some embodiments, the light blocking portion is taller than the lenslets such that all or a portion of a light beam transmitted through one of the lenslets is not transmitted to an effective photosensitive area directly opposite an adjacent or other lenslet.

In some embodiments, the effective photosensitive area includes an area where a plurality of the pixel units are located.

In some embodiments, the retaining wall comprises a retaining wall side surface and a retaining wall top surface, wherein the retaining wall side surface is located between the retaining wall top surface and the upper surface, and the retaining wall top surface is a plane.

In some embodiments, the plurality of lenslets are spherical lenses or aspherical lenses.

In some embodiments, the plurality of lenslets are convex lenses.

In some embodiments, the light blocking portion fills a spacing region between the plurality of lenslets, preventing light from being transmitted from the spacing region onto the first image sensing die.

In some embodiments, the light shielding portion is higher than the lenslets in height, so as to prevent the lens module from being damaged by pressure on the side opposite to the first image sensing die.

The lens module of the optically integrated device has the advantages that the lens module comprises a plurality of small lenses for converging light beams to the light sensing module, the small lenses have smaller thickness compared with the large lens in the prior art, and the focal length is reduced, so that the optically integrated device has compact and small volume and size.

Drawings

Fig. 1 is a schematic structural diagram of an embodiment of an electronic device according to the present application.

Fig. 2 is a partially exploded view of an optical sensing device according to a first embodiment of the present application.

FIG. 3 is a view of the optical detection device shown in FIG. 2 taken along line II-II^’An enlarged schematic view of a portion of the cross section of the wire.

FIG. 4 shows respective imaging schematics of a large lens of the prior art and a lenslet of the present application.

Fig. 5 is a schematic top view and a schematic partial cross-sectional view of an optical sensing device according to a first embodiment of the present application.

Fig. 6 is a partial cross-sectional view of an optical sensing device according to a second embodiment of the present application.

Fig. 7 is an exploded view of an embodiment of the optical integrated device according to the present application.

Fig. 8 is a flowchart of a method for manufacturing the optically integrated device shown in fig. 7.

Fig. 9 is a schematic structural diagram of an embodiment of a second image sensing die according to the present application.

Detailed Description

In the detailed description of the embodiments herein, it will be understood that when a substrate, a sheet, a layer, or a pattern is referred to as being "on" or "under" another substrate, another sheet, another layer, or another pattern, it can be "directly" or "indirectly" on the other substrate, the other sheet, the other layer, or the other pattern, or one or more intervening layers may also be present. The thickness and size of each layer in the drawings of the specification may be exaggerated, omitted, or schematically represented for clarity. Further, the sizes of the elements in the drawings do not completely reflect actual sizes.

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art without any inventive work based on the embodiments in the present application are within the scope of protection of the present application.

Further, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to provide a thorough understanding of embodiments of the application. One skilled in the relevant art will recognize, however, that the subject technology can be practiced without one or more of the specific details, or with other structures, components, and so forth. In other instances, well-known structures or operations are not shown or described in detail to avoid obscuring the focus of the application.

Referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of an electronic device according to the present application. The electronic device 1000 comprises an optical sensing device 1 and a display screen 2. The display screen 2 is used for displaying pictures. The optical sensing device 1 is located below the display screen 2, and is configured to receive a light beam returned by an external object through the display screen 2, and convert the received light beam into a corresponding electrical signal, so as to perform corresponding information sensing. The optical sensing device 1 is used for example to perform sensing of biometric information, such as but not limited to, texture information including fingerprint information, palm print information, and the like, and/or living body information including blood oxygen information, heartbeat information, pulse information, and the like. However, the present application is not limited thereto, and the optical sensing apparatus 1 may also be used for performing other information sensing, such as depth information sensing, proximity sensing, and the like. In the present application, the optical sensing device 1 is mainly used to perform the sensing of the biometric information. The display screen 2 is, for example, but not limited to, an OLED display screen or an LCD display screen. The display screen 2 may be used as an excitation light source for providing a light beam for detection, or an excitation light source may be additionally provided in the electronic device 1000 for providing a light beam for detection.

The electronic device 1000 may be any suitable type of electronic product, such as, but not limited to, consumer electronics, home electronics, vehicle-mounted electronics, financial terminal products, and the like. The consumer electronic products include, for example, mobile phones, tablet computers, notebook computers, desktop monitors, all-in-one computers, and the like. Household electronic products are, for example, smart door locks, televisions, refrigerators and the like. The vehicle-mounted electronic product is, for example, a vehicle-mounted navigator, a vehicle-mounted DVD, or the like. The financial terminal products are ATM machines, terminals for self-service business and the like.

It should be noted that in the present application, the optical sensing device 1 has a plurality of different embodiments, and for the sake of clarity, the optical sensing device 1 in the different embodiments is respectively labeled with

different reference numerals

1a and 1b for distinction. Further, for convenience of description, the same reference numerals in different embodiments of the optical sensing apparatus 1 may refer to the same elements, and may also refer to similar elements that may be modified, replaced, expanded, or combined.

Referring to fig. 2 and fig. 3 together, fig. 2 is a partially exploded schematic view of an optical sensing device 1a according to a first embodiment of the present application. FIG. 3 is a view of the optical detection device 1a shown in FIG. 2 taken along line II-II^’An enlarged schematic view of a portion of the cross section of the wire. The optical sensing device 1a includes a lens module 10 and a first image sensing Die 20(Die) located below the lens module 10. The lens module 10 is used for converging a light beam to the first image sensing die 20. The first image sensing die 20 is used for converting the received light beams into corresponding electrical signals.

The lens module 10 includes a plurality of lenslets 110 (Mini-lenses) and a light shielding portion 111. The plurality of lenslets 110 and the light blocking portion 111 are disposed on the first image sensing die 20. The plurality of lenslets 110 are spaced apart from one another. The plurality of lenslets 110 are configured to focus light onto the first image sensing die 20. The light shielding portion 111 is disposed in a space region between the plurality of lenslets 110 and is higher in height than the lenslets 110. The light shielding portion 111 is used for shielding the light beam.

Optionally, the lenslets 110 are arranged in a regular array. Further optionally, the plurality of lenslets 110 are arranged, for example, but not limited to, in a rectangular array. However, alternatively, in some embodiments, the lenslets 110 may be non-regularly arranged.

Optionally, the light shielding portion 111 is only located between part of the adjacent lenslets 110, or the light shielding portion 111 is arranged between any adjacent lenslets 110.

Optionally, the light shielding portion 111 is higher in height than the lenslets 110 by any value from 5 micrometers to 100 micrometers. Further optionally, the light shielding portion 111 is higher in height than the lenslets 110 by any value of 5 to 10 micrometers.

Optionally, the plurality of lenslets 110 are convex lenses. Further optionally, the plurality of lenslets 110 are spherical lenses or aspherical lenses.

Optionally, the plurality of lenslets 110 are made of a transparent material. Such as, but not limited to, transparent acrylic, transparent glass, UV glue material, and the like.

Alternatively, the plurality of lenslets 110 are, for example, identical. However, alternatively, in some embodiments, the plurality of lenslets 110 may not be identical.

The first image sensing die 20 includes a plurality of pixel cells 212. The plurality of pixel units 212 are configured to receive the light beams through the lens module 10 and convert the received light beams into corresponding electrical signals to obtain corresponding biometric information of the external object 1001 (see fig. 1). Such as, but not limited to, a user's finger, palm, etc. The pixel unit 212 includes, for example, but not limited to, a photodiode, etc.

Optionally, the plurality of pixel units 212 are arranged in a regular array. However, alternatively, in some embodiments, the plurality of pixel units 212 may be arranged irregularly.

Optionally, each of the lenslets 110 respectively faces a plurality of the pixel units 212. However, alternatively, in some embodiments, the lenslets 110 can be directly opposite the pixel elements 212.

Compared with the case that each small lens 110 respectively faces only one pixel unit 212, the light sensing area of each small lens 110 respectively faces a plurality of pixel units 212 can be increased, and the sensing accuracy of the small lens 110 is higher than that of the pixel units 212.

The effective photosensitive area 211 is defined as the area of the pixel units 212 that can receive the light beams through the lenslets 110. The effective photosensitive area 211 is capable of converting a light beam into a corresponding electrical signal.

Optionally, each effective photosensitive area 211 faces one of the lenslets 110. The light beam transmitted through the lenslet 110 converges to an effective photosensitive area 211 opposite the lenslet 110. The effective photosensitive areas 211 opposite to the lenslets 110 are arranged at intervals. The effective photosensitive area 211 is smaller in area than the area of the orthographic projection of the lenslet 110 on the photosensitive surface 210.

Alternatively, the light beams can reach a plurality of pixel units 212 after being converged by each of the lenslets 110. That is, the effective photosensitive region 211 includes a region where a plurality of pixel units 212 are located.

The light shielding portion 111 is higher than the lenslets 110 in height, so that part or all of the light beam 101 transmitted through one lenslet 110 is not transmitted to the effective photosensitive area 211 opposite to the adjacent or other lenslets 110.

Optionally, the thickness of the first image sensing die 20 may be about 100 microns.

A side surface of the first image sensing die 20 capable of sensing light beams is defined as a photosensitive surface 210, and the lens module 10 is located on the photosensitive surface 210. The highest height from the light shielding layer 111 to the photosensitive surface 210 is higher than the highest height from the small lens 110 to the photosensitive surface 210.

Optionally, when the plurality of lenslets 110 are fabricated, the first image sensing die 20 serves as a carrier substrate for the plurality of lenslets 110. The plurality of lenslets 110 are formed on the first image sensing die 20, such as, but not limited to, by an embossing process, the first image sensing die 20 serving as a carrier substrate in fabricating the plurality of lenslets 110.

Optionally, the lens module 10 itself does not have a carrier substrate for carrying the plurality of lenslets 110 and the light shielding portion 111, and when the lens module 10 is manufactured, the first image sensing die 20 serves as the carrier substrate for the lens module 10, so that the lens module 10 is directly formed on the first image sensing die 20.

Compared to first manufacturing the lens module 10 on an additional substrate and then fixing the additional substrate carrying the lens module 10 and the first image sensing die 20 by, for example, an adhesive layer, the optical sensing device 1a of the present application is thinner due to the saving of the additional substrate.

Optionally, the optical sensing device 1a further comprises a filter layer 13. The filter layer 13 is disposed above the plurality of pixel units 212.

In some embodiments, the filter layer 13 is used to transmit light beams in a target wavelength band and filter out light beams outside the target wavelength band, so as to reduce the interference of stray light on sensing accuracy. The light beam of the target wavelength band is, for example, visible light.

Alternatively, in some other embodiments, the filter layer 13 is configured to filter out light beams in a second predetermined wavelength band, and the light shielding portion 111 is configured to filter out light beams in a first predetermined wavelength band, wherein the first predetermined wavelength band is completely different from or completely the same as or partially the same as the second predetermined wavelength band.

When the first preset waveband is the same as the second preset waveband, the first preset waveband comprises the second preset waveband. For example, the first preset wavelength band includes a visible light wavelength band and a near infrared light wavelength band, and the second preset wavelength band includes a near infrared light wavelength band. The filter layer 13 is, for example, an infrared cut filter.

In some embodiments, the filter layer 13 is disposed on the first image sensing die 20, or/and the filter layer 13 is disposed on the lens module 10. Specifically, for example, the filter layer 13 is provided on the plurality of lenslets 110 and the light shielding layer 111.

Optionally, the filter layer 13 is formed on the photosensitive surface 210 of the first image sensing die 20 by, for example, an evaporation process.

Optionally, the thickness of the filter layer 13 is 1 to 5 microns.

Optionally, the plurality of lenslets 110 are formed on the filter layer 13 by an embossing process.

Optionally, the filter layer 13 is in direct contact with the first image sensing die 20, and the lens module 10 is in direct contact with the filter layer 13.

Optionally, the optical sensing device 1a further includes a substrate 30 located below the first image sensing die 20. The substrate 30 is used, for example, to provide support for the first image sensing die 20 and electrical connections to external circuitry. The substrate 30 is, for example, a flexible printed circuit board or a rigid printed circuit board.

Optionally, the optical sensing device 1a further includes a connection layer 42 located between the first image sensing die 20 and the substrate 30, the connection layer 42 is used for connecting the first image sensing die 20 and the substrate 30, and the connection layer 42 is located between the first image sensing die 20 and the substrate 30 and covers an opposite portion between the first image sensing die 20 and the substrate 30.

Referring again to FIG. 3, FIG. 3 shows two adjacent lenslets 110 with corresponding optical centers G1 and G2, respectively, and the distance LP between the optical centers G1 and G2 is the Pitch (Pitch). Optionally, the pitch may be any value from 300 microns to 500 microns, for example, but not limited to, the pitch may be 350 microns, 400 microns, 450 microns.

Optionally, the lenslets 110 have a maximum width LR or diameter such as, but not limited to, 100 microns.

The lenslets 110 include curved facets 1101, the curved facets 1101 capable of converging the light beams 101 entering the lenslets 110. Alternatively, in some embodiments, the lenslets 110 may be lenslets (mini-lenses), each lenslet includes a curved surface 1101 and a lens bottom surface 1102 connected to the curved surface, the curved surface 1101 is a convex surface, and the lens bottom surface 1102 is located on the photosensitive surface 210. For example, and without limitation, the lenslet's sagittal height H1 may be 20 microns, the bottom lens surface 1102 may be circular with a diameter of 100 microns to 150 microns, and the curved surface 1101 may be spherical with a radius of 80 microns to 100 microns.

Optionally, the light shielding portion 111 includes a retaining wall 1111 and a light shielding layer 1112. The retaining walls 1111 are located in spaced-apart regions between the plurality of lenslets 110. The light shielding layer 1112 is located above the retaining wall 1111 and covers the interval regions between the small lenses 110. The light shielding layer 1112 is used for shielding the light beam 101. For example, the light shielding layer 1112 prevents the light beam 101 from passing through the space between the small lenses 110.

Alternatively, the retaining wall 1111 and the lenslets 110 may be made of the same transparent material. Such as, but not limited to, transparent acrylic, transparent glass, UV glue material, and the like. The retaining wall 1111 and the lenslets 110 may be formed in one step, for example, but not limited to, by an embossing process. Therefore, the process production flow can be reduced, the production efficiency can be improved, and the product cost can be reduced.

When the retaining wall 1111 is fabricated, the first image sensing die 20 is also used as a carrier substrate.

Fig. 3 is only an example, and in an actual product, the retaining wall 1111 and the lenslets 110 may be integrated. The retaining wall 1111 is not disconnected from the small lenses 110 and is integrally formed of the same material.

When the first substrate 12 and the first connection layer 41 are omitted, the first image sensing die 20 serves as a carrier substrate, and the plurality of lenslets 110 and the retaining walls 1111 in the lens module 10 are formed on the first image sensing die 20, for example, but not limited to, by an imprinting process. The optical sensing device 1a is manufactured at a low cost due to the imprinting process.

However, alternatively, in some embodiments, the retaining wall 1111 and the small lenses 101 may be made of different materials, and the retaining wall 1111 and the small lenses 101 may be formed separately from each other. This is not to be taken in any way limiting by the present application.

Optionally, the material of the light shielding layer 1112 is an opaque resin material or an opaque other material, and the light beam 101 cannot pass through the light shielding layer 1112. Alternatively, the light shielding layer 1112 may be formed by coating, spraying, evaporating, stamping, or other suitable processes, and may have a thickness of 1 to 5 μm.

Optionally, the height H2 of the retaining wall 1111 is greater than the sagittal height H1 of the lenslet 110.

Optionally, the height of the retaining wall 1111 relative to the photosensitive surface 210 is greater than the height of the small lens 110 relative to the photosensitive surface 210.

The two adjacent lenslets 110 are exemplified by the light shielding portion 111 disposed between the two adjacent lenslets 110, and the light shielding portion 111 is used for preventing part or all of the light beam 101 transmitted through one of the lenslets 110 from reaching the effective photosensitive region 211 opposite to the other lenslet 110.

Alternatively, in some embodiments, the light-shielding layer 1112 is omitted and the retaining wall 1111 is made of a non-light-transmissive material. In addition, the retaining wall 1111 may have different structures or positions or numbers, all of which are within the protection scope of the present application.

In this application, the light blocking portion 111 is higher in height than the lenslets 110 so that some or all of the light beams transmitted through the lenslets 110 are not transmitted to the effective photosensitive regions 211 directly opposite adjacent or other lenslets 110. Therefore, mutual interference of light beams can be reduced or avoided, and sensing accuracy is improved. In addition, since the light shielding portion 111 is higher than the small lens 110, when pressure is applied to the lens module 10 from top to bottom, the light shielding portion 111 can bear all or most of the pressure, and the small lens 110 is not deformed or damaged by the pressure, so that optical imaging is not affected.

For example, but not limiting of, pressure may be applied to the lens module 10 when the first image sensing die 20 and the substrate 30 are connected, and since the shielding 111 is higher than the lenslets 110, the lenslets 110 are not damaged by the pressure.

However, alternatively, in some embodiments, the light blocking portion 111 may be level with the lenslets 110 or entirely lower than the lenslets 110. For example, the maximum height of the light shielding portion 111 relative to the photosensitive surface 210 is equal to or lower than the maximum height of the lenslet 110 relative to the photosensitive surface 210.

Alternatively, when the light blocking portions 111 are all lower in height than the lenslets 110, the lenslets 110 cannot be, for example, 10 microns above the light blocking portions 111. In this way, the disturbance of the light beam after passing through each small lens 110 is small and the light flux is high, so that the sensing accuracy can be improved.

For example, the difference between the highest height of the small lens 110 relative to the photosensitive surface 210 and the highest height of the light shielding portion 111 relative to the photosensitive surface 210 is not greater than 10 microns.

For example, the highest point of the light shielding portion 111 facing away from the first image sensing die 21 is higher than the highest point of the small lens 110 facing away from the first image sensing die 21, or the highest point of the light shielding portion 111 facing away from the first image sensing die 21 is flush with the highest point of the small lens 110 facing away from the first image sensing die 21, or the highest point of the light shielding portion 111 facing away from the first image sensing die 21 is lower than the highest point of the small lens 110 facing away from the first image sensing die 21 but not lower than 10 micrometers.

Referring to FIG. 4, FIG. 4 shows a schematic representation of the imaging of a large lens 1002 of the prior art and a lenslet 110 of the present application, respectively. The light incident surface of the large lens 1002 is a convex surface of a single lens. The curved surfaces 1101 of the lenslets 110 of the optical sensing device 1a simultaneously serve as light incident surfaces. It should be noted that the lenses described in the present document are all referred to as convex lenses. The focal length of the lens may be determined based on the viewing angle of the electronic device 1000 and the size of the lens. For example, when the viewing angle is fixed, the focal length may increase in proportion to the size of the lens.

Taking fingerprint detection as an example, in order to acquire sufficient fingerprint characteristic information, the large lens 1002 and the small lens 110 need to perform convergent imaging on the light beam in the detection region VA. For example, but not limited to, the detection area VA may be a rectangular area with a diameter of 4 mm × 4 mm to 10 mm × 10 mm, or the detection area VA may be a circular area with a diameter greater than or equal to 4 mm and less than or equal to 10 mm, and of course, the detection area VA may have other configurations, which is not limited in this embodiment.

The diameter of the large lens 1002 of the prior art can be typically 1 mm or more, whereas the diameter of the small lens 110 in the present application can be 100 microns, which is only 1/10 of the diameter of the large lens 1002, the focal length of the small lens 110 being smaller than the focal length of the large lens 1002. In addition, in the optical sensing device 1a, each of the different lenslets 110 is used to capture a portion of the detection area VA. For example, as shown in fig. 4, three different lenslets 110 are used for convergent imaging of the light beam 101 transmitted through the sub-detection regions V1, V2, V3, respectively, the sub-detection regions V1, V2, V3 are local regions of the detection region VA, and the sub-detection regions V1, V2, V3 may have overlapping or non-overlapping. In contrast, the large lens 1002 of the prior art needs to perform convergent imaging of the light beam 101 transmitted through the entire detection area VA. Under the condition of basically the same viewing angles, the distance between the optical center of the small lens 110 and the detection area VA is smaller than that between the optical center of the large lens 1002 and the detection area VA, and the distance between the optical center of the small lens 110 and the photosensitive surface 210 of the first image sensing die 20 is smaller than that between the optical center of the large lens 1002 and the photosensitive surface 210 of the first image sensing die 20.

Therefore, the distance between the detection area VA of the prior art and the photosensitive surface 210 of the first image sensor die 20 is greater than the distance between the detection area VA and the photosensitive surface 210 of the first image sensor die 20 when the optical sensing device 1a is used for fingerprint detection in the embodiment of the present application. Therefore, compared to the prior art, the optical sensing device 1a of the present application has a more compact and compact volume and size, and can be used in an electronic device 1000 with a more demanding requirement for the occupied internal space, such as a mobile phone, a tablet computer, a smart watch, and the like. The module thickness (thickness from the retaining wall 1111 to the substrate 30 in fig. 3) of the optical sensing device 1a of the present application can be up to 0.5 mm, for example, 0.4 mm, 0.35 mm or less, and the optical sensing device 1a can be used as an ultra-thin camera or applied below the display screen 2 (see fig. 1) to realize the optical biometric feature detection under the screen.

Referring to fig. 5, fig. 5 is a schematic top view and a schematic partial cross-sectional view of the optical sensing device 1 a. In fig. 5, reference numeral PA denotes a pixel area where the plurality of pixel units 212 (see fig. 3) of the first image sensing die 20 are located, and reference numeral BA denotes a peripheral area of the first image sensing die 20. The peripheral area BA is located around the pixel area PA. The optical sensing device 1a further includes a conducting wire 22, and the first image sensing die 20 is electrically connected to the substrate 30 through the conducting wire 22. The substrate 30 may be electrically connected to an external integrated circuit. The connection layer 42 of the optical sensing device 1a connects the first image sensing die 20 and the substrate 30. The filter layer 13 is formed between the lens module 10 and the first image sensing die 20.

Referring to fig. 6, fig. 6 is a partial cross-sectional view of an optical sensing device 1b according to a second embodiment. The optical sensing device 1b and the optical sensing device 1a have substantially the same structure, and the main difference is that: the flexible circuit board 50 of the optical sensing device 1b has an opening 51, the first image sensing die 20 is disposed on the reinforcing plate 30c, and the lens module 10 and the first image sensing die 20 are located in the opening 51. Since the flexible circuit board 50 is not present between the first image sensing die 20 and the reinforcing plate 30c, the overall thickness (or height) of the optical sensing device 1e is small.

Optionally, the thickness of the flexible printed circuit 50 is 0.1 mm, and the thickness of the optical sensing device 1c may be reduced by 0.1 mm compared to the flexible printed circuit 50 without the opening 51. Optionally, the reinforcing plate 30c is a metal substrate, such as but not limited to: aluminum substrates, stainless steel substrates, and the like.

Referring to fig. 7 and 8 together, fig. 7 is an exploded view of an embodiment of an optical integrated device according to the present application. Fig. 8 is a flowchart of a method for manufacturing the optically integrated device shown in fig. 7. The optically integrated device 200 includes a Wafer (Wafer)60, a plurality of filter layers 13, and a plurality of lens modules 10. The wafer 60 includes a plurality of first image sensing dies 20. The structures and functions of the first image sensing die 20, the filter layer 13 and the lens module 10 are the structures and functions of the first image sensing die 20, the filter layer 13 and the lens module 10 in the optical sensing device 1 of the above embodiments, respectively, and are not described herein again.

The manufacturing method of the optical integrated device 200 comprises the following steps:

in step S1, the wafer 60 is provided.

The wafer 60 includes the plurality of first image sensing dies 20 thereon. The first image sensing die 20 is configured to receive the light beam and convert the received light beam into a corresponding electrical signal. Wherein the first image sensing die 20 includes a pixel area PA (see fig. 5) and a peripheral area BA (see fig. 5).

Step S2: a plurality of filter layers 13 are formed on the pixel area PA of the first image sensing die 20.

In step S2, the plurality of filter layers 13 are formed on the pixel areas PA of the plurality of first image sensing dies 20, for example, but not limited to, using an evaporation process.

Step S3: a plurality of lens modules 10 are formed on the filter layer 13, thereby forming the optically integrated device 200.

The step S3 may include, for example:

step S31: UV glue is provided on the plurality of filter layers 13;

step S32: curing the UV glue;

step S33: imprinting the cured UV glue to form lenslets 110 and retaining walls 1111 (see fig. 3) of the lens module 10;

in step S31, a light-shielding layer 1112 is formed on the walls 1111 of the lenslets 110 (see FIG. 3).

It should be noted that the material forming the small lens 110 and the retaining wall 1111 may not be limited to the UV glue. In addition, the small lens 110 and the retaining wall 1111 forming the lens module 10 are not limited to the imprinting process.

However, it is contemplated that, alternatively, in some embodiments, some steps may be added or subtracted from the above-described manufacturing method. For example, step S2 may be omitted, and accordingly, the plurality of lens modules 10 are directly formed on the plurality of first image sensing dies 20.

Referring to fig. 9, fig. 9 is a schematic structural diagram of a second image sensor die 50 according to an embodiment of the present disclosure.

After the optically integrated device 200 is formed, a plurality of second image sensing dies (Die)50 can be formed through a dicing process. The optical sensing device 1 includes the second image sensing die 50. The plurality of pixel cells 212 (see fig. 3), the filter layer 13, and the lens module 10 are integrated in the second image sensing die 50.

It should be noted that, in the embodiment of the present application, the second image sensing Die 50 is actually a Die, which is more complicated than the Die structure of the first image sensing Die 20. The second image sensing die 50 and the first image sensing die 20 are both a small product cut from a large product or device.

In addition, it should be noted that part or all of the structures, functions, and methods of the embodiments of the present application may be applied to other or modified embodiments, and are not limited to the embodiments described in correspondence thereto, and all embodiments obtained thereby belong to the scope of the present application. In addition, in the embodiment of the present application, the light beam may be visible light or invisible light, and the invisible light may be near infrared light, for example. The terms "overlap", "overlap" and "overlapping" as may appear in the description of the present application should be understood to have the same meaning and to be interchangeable.

It should be noted that, part or all of the embodiments of the present application, and part or all of the modifications, substitutions, alterations, splits, combinations, extensions, etc. of the embodiments are all considered to be covered by the inventive concept of the present application, and belong to the protection scope of the present application, without inventive efforts.

Any reference in this specification to "one embodiment," "an embodiment," "example embodiment," etc., means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment. Further, when a particular feature or structure is described in connection with any embodiment, it is submitted that it is within the purview of one skilled in the art to effect such feature or structure in connection with other ones of the embodiments.

The orientations or positional relationships indicated by "length", "width", "upper", "lower", "left", "right", "front", "rear", "back", "front", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, which may appear in the specification of the present application, are based on the orientations or positional relationships shown in the drawings, and are only for convenience of describing the embodiments of the present application and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present application. Like reference numbers and letters refer to like items in the figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance. In the description of the present application, "plurality" or "a plurality" means at least two or two unless specifically defined otherwise. In the description of the present application, it should also be noted that, unless explicitly stated or limited otherwise, "disposed," "mounted," and "connected" are to be understood in a broad sense, e.g., they may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; either directly or indirectly through intervening media, or may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.

The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. The terms used in the following claims should not be construed to limit the application to the specific embodiments disclosed in the specification. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. An optically integrated device, comprising:

the light shielding part is arranged on the first image sensing die and located in the interval area among the small lenses and used for shielding light beams, wherein the highest point of the light shielding part, which is back to the first image sensing die, is higher than the highest point of the small lenses, which is back to the first image sensing die, or the highest point of the light shielding part, which is back to the first image sensing die, is flush with the highest point of the small lenses, which is back to the first image sensing die, or the highest point of the light shielding part, which is back to the first image sensing die, is lower than the highest point of the small lenses, which is back to the first image sensing die, but not lower than 10 micrometers.

2. The optically integrated device of claim 1, further comprising:

3. The optically integrated device of claim 2, wherein the filter layer is formed between the wafer and the plurality of lens modules, or wherein the filter layer is formed on a side of the plurality of lens modules facing away from the wafer.

4. The optically integrated device of claim 2, wherein the second predetermined wavelength band is a wavelength band outside the target wavelength band.

5. The optically integrated device of claim 4, wherein the predetermined wavelength band is visible light and the second predetermined wavelength band comprises near infrared light.

6. The optically integrated device of claim 2, wherein the filter layer is formed on the wafer by an evaporation process.

7. The optically integrated device of claim 1 or 6, wherein the plurality of lenslets are formed on the wafer by an embossing process.

8. The optically integrated device of claim 7, wherein the light-shielding portion comprises a retaining wall and a light-shielding layer, the retaining wall is located between the wafer and the light-shielding layer, and the light-shielding layer is used for shielding the light beam, wherein the retaining wall and the small lenses are integrated by an imprinting process.

9. The optically integrated device of claim 1, wherein a side surface of the first image sensor die for sensing the light beam is defined as a photosensitive surface, and a maximum height from the light shielding portion to the photosensitive surface is higher than a maximum height from the lenslet to the photosensitive surface by any value from 5 micrometers to 10 micrometers.

10. The optically integrated device of claim 1, wherein the pitch between adjacent lenslets is any value from 300 microns to 500 microns.

11. The optically integrated device of claim 1, wherein the plurality of lenslets are arranged in an array, and the plurality of pixel elements are arranged in an array.

12. The optically integrated device of claim 1, wherein an area of the plurality of pixel elements in the first image sensor die capable of receiving the light beam through the lenslets is defined as an effective photosensitive area, each effective photosensitive area respectively faces one of the lenslets, and the light beam transmitted through the lenslets is converged into the effective photosensitive area facing the lenslets.

13. The optically integrated device of claim 12, wherein the light blocking portion is elevationally higher than the lenslets such that all or a portion of a light beam transmitted through one of the lenslets is not transmitted to the active photosensitive area directly opposite an adjacent or other lenslet.

14. The optically integrated device of claim 13, wherein the active photosensitive area comprises a plurality of pixel cells.

15. The optical integrated device as claimed in claim 8, wherein the retaining wall includes a retaining wall side surface and a retaining wall top surface, the retaining wall side surface is located between the retaining wall top surface and the upper surface of the wafer, and the retaining wall top surface is a plane.

16. The optically integrated device of claim 1, wherein the plurality of lenslets are spherical lenses or aspheric lenses.

17. The optically integrated device of claim 1, wherein the plurality of lenslets are convex lenses.

18. The optically integrated device of claim 1, wherein the light blocking portion fills the spaced regions between the plurality of lenslets to prevent light from being transmitted from the spaced regions onto the first image sensing die.

19. The optically integrated device of claim 1, wherein the light blocking portion is higher in height than the lenslets for preventing the lens module from being damaged by pressure on a side facing away from the first image sensing die.