CN212134535U - Imaging system - Google Patents
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- CN212134535U CN212134535U CN202020109496.7U CN202020109496U CN212134535U CN 212134535 U CN212134535 U CN 212134535U CN 202020109496 U CN202020109496 U CN 202020109496U CN 212134535 U CN212134535 U CN 212134535U
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Abstract
The utility model discloses an imaging system, include: an X-ray microscope (Micro-CT) subsystem, an Ion Milling instrument (Ion-Milling) subsystem, a Scanning Electron Microscope (SEM) subsystem, and a processor; the X-ray microscope (Micro-CT) subsystem is used for acquiring a three-dimensional image of a sample to be detected; the Ion Milling instrument (Ion-Milling) subsystem is used for emitting Ion beams to process the sample to be detected to obtain a target section of a target area; the Scanning Electron Microscope (SEM) subsystem is used for acquiring a two-dimensional image of the target section; and the processor is used for carrying out three-dimensional reconstruction on the two-dimensional image to obtain three-dimensional imaging of the target area. The utility model provides an imaging system can be quick, accurate realization large tracts of land sample inner structure three-dimensional imaging analysis that awaits measuring.
Description
Technical Field
The utility model belongs to the technical field of the microscope, specifically speaking relates to an imaging system.
Background
In the prior art, a scanning electron microscope is a commonly used microscopic analysis instrument, and generally, an electron beam is focused on a sample to be detected through an electromagnetic lens of the scanning electron microscope to generate a tiny beam spot, and the electron beam is excited in a micro-area to generate information such as Secondary Electrons (SE), backscattered electrons (BSE), X-rays and the like, so that the appearance of the surface of the sample to be detected can be observed through a detector, and the material components can be analyzed.
With the development of science and technology, the analysis of the internal micro-detail structure of the sample to be detected gradually receives attention from people. In particular, morphological information that characterizes the entire biological morphology in three-dimensional scale space with the highest resolution and reliability is favored by researchers.
Chinese patent application No. CN201821196445.1 discloses an imaging system, comprising: a micro-electron computed tomography (micro-CT) subsystem, a sample processing subsystem, and a Scanning Electron Microscope (SEM) and processor; the micro-CT subsystem comprises: the X-ray source and the X-ray detector are used for acquiring a three-dimensional image of the sample; the sample processing subsystem includes: a focused ion beam subsystem and a mechanical cutting device; the focused ion beam subsystem processes the sample in a first processing mode, and the mechanical cutting device processes the sample in a second processing mode to obtain a target section of a target area; the SEM is positioned above the sample and is used for acquiring a two-dimensional image of the target section; and the processor is used for carrying out three-dimensional reconstruction on the two-dimensional image to obtain three-dimensional imaging of the sample. According to the technical scheme, a focused ion beam subsystem (FIB) is adopted to process a sample to be detected, so that on one hand, the focused ion beam is small in size, the range of a processing area of the sample to be detected is small, and a target area cannot be quickly obtained. On the other hand, the method has requirements on the size of the sample, and reduces the application range of the sample to be detected.
In view of this, the present invention is provided.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model lies in overcoming the not enough of prior art, provides an imaging system, and this imaging system can be quick, accurate realization large tracts of land sample inner structure three-dimensional imaging analysis that awaits measuring.
In order to solve the technical problem, the utility model adopts the following basic concept: an imaging system, comprising:
an X-ray microscope (Micro-CT) subsystem, an Ion Milling instrument (Ion-Milling) subsystem, a Scanning Electron Microscope (SEM) subsystem, and a processor;
the X-ray microscope (Micro-CT) subsystem is used for acquiring a three-dimensional image of a sample to be detected;
the Ion Milling instrument (Ion-Milling) subsystem is used for emitting Ion beams to process the sample to be detected to obtain a target section of a target area;
the Scanning Electron Microscope (SEM) subsystem is used for acquiring a two-dimensional image of the target section;
and the processor is used for carrying out three-dimensional reconstruction on the two-dimensional image to obtain three-dimensional imaging of the target area.
Further, the Ion mill (Ion-Milling) subsystem comprises an Ion source device and a baffle plate, wherein the baffle plate is arranged between the Ion source device and the sample to be tested.
Further, the ion source device is used for generating a plane-shaped ion beam.
In some optional embodiments, the baffle is movably disposed between the ion source device and the sample to be tested.
Furthermore, the baffle is connected with a piezoelectric ceramic controller, and the piezoelectric ceramic controller controls the movement precision of the baffle to be in a nanometer level.
In some optional embodiments, the sample to be tested is disposed on a sample stage, and the sample stage is capable of five-degree-of-freedom motion;
the baffle is arranged on the sample platform and can move up and down relative to the sample platform.
In some alternative embodiments, the Ion beam emitted by the Ion Milling subsystem is at an angle θ, 0 θ ≦ 90, to the axis of electron beam irradiation emitted by the Scanning Electron Microscope (SEM) subsystem.
In some alternative embodiments, the X-ray microscope (Micro-CT) subsystem comprises: transmission X-ray microscope.
In some optional embodiments, the processor is further configured to determine a first region of the three-dimensional image and position information of the first region;
the Ion Milling subsystem is used for processing the part of the sample to be detected which is not shielded by the baffle plate so as to expose or be exposed at the first area;
the X-ray microscope (Micro-CT) subsystem is also used for acquiring a three-dimensional image of the processed sample to be detected;
the processor is further configured to perform navigation correction on the first region based on the processed three-dimensional image of the sample to be detected to obtain a second region, and determine that the position information of the second region is the position information of the target region; the position information of the target area is used for processing the sample to be tested by the Ion Milling subsystem.
In some alternative embodiments, the Scanning Electron Microscope (SEM) subsystem further comprises:
the energy spectrometer (EDS) is used for acquiring the energy spectrum information of the sample to be detected;
a spectrometer (WDS) for acquiring the spectrum information of the sample to be tested;
an electron back scattering diffraction analyzer (EBSD) for obtaining the crystal grain orientation information of the sample to be detected;
and the cathode fluorescence spectrometer (CL) is used for acquiring the fluorescence information of the sample to be detected.
After the technical scheme is adopted, compared with the prior art, the utility model following beneficial effect has.
The utility model discloses based on X-ray microscope (Micro-CT) subsystem acquires the three-dimensional image of the sample that awaits measuring, confirms target area fast, processes the sample that awaits measuring through Ion grinding appearance (Ion-Milling) subsystem and obtains target area's target cross section, and then Scanning Electron Microscope (SEM) subsystem acquires the two-dimensional image of target cross section obtains the three-dimensional formation of image of the sample inner structure that awaits measuring through the treater at last. Because the sample that awaits measuring can be processed at a high speed to Ion grinder (Ion-Milling) subsystem, obtains wide and dark cutting area, can obtain a high-quality cutting cross-section fast, so the utility model provides an imaging system can be quick, accurate realization large tracts of land sample inner structure three-dimensional imaging analysis that awaits measuring.
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention, are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention without undue limitation. It is obvious that the drawings in the following description are only some embodiments, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
fig. 1 is a schematic diagram of an overall structure of an imaging system provided by the present invention;
fig. 2 is a schematic diagram of a right angle relationship between an Ion beam emitted from an Ion Milling (Ion-Milling) subsystem and an electron beam irradiation axis emitted from a Scanning Electron Microscope (SEM) subsystem according to the present invention;
FIG. 3 is a schematic diagram of an Ion beam emitted by an Ion Milling (Ion-Milling) subsystem according to the present invention in an angular relationship to an electron beam irradiation axis emitted by a Scanning Electron Microscope (SEM) subsystem;
fig. 4 is a first schematic structural diagram of an imaging system applying the sample detection imaging method provided by the present invention;
fig. 5 is a schematic structural diagram of an imaging system applying the sample detection imaging method according to the present invention;
fig. 6 is a schematic structural diagram three of an imaging system applying the sample detection imaging method provided by the present invention;
fig. 7 is a schematic structural diagram of an imaging system applying the sample detection imaging method according to the present invention;
fig. 8 is a schematic flow chart of a sample detection imaging method provided by the present invention.
In the figure: 1. a Scanning Electron Microscope (SEM) subsystem; 2. energy spectrometers (EDS); 3. a sample to be tested; 31. a three-dimensional image; 32. a target area; 33. cutting the area; 34. a plurality of target cross sections; 35. a two-dimensional image of a plurality of target sections; 36. three-dimensional imaging; 4. ion mill (Ion-Milling) subsystem; 41. an ion source device; 42. a baffle plate; 5. an X-ray microscope (Micro-CT) subsystem; 51. an X-ray source; 52. an X-ray detector; 6. a sample stage; 61. rotating the platform; 62. a mobile platform; 7. a processor.
It should be noted that the drawings and the description are not intended to limit the scope of the inventive concept in any way, but to illustrate the inventive concept by those skilled in the art with reference to specific embodiments.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the drawings in the embodiments of the present invention are combined below to clearly and completely describe the technical solutions in the embodiments, and the following embodiments are used for illustrating the present invention, but do not limit the scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 1 to 7, the present invention provides an imaging system, including: the system comprises an X-ray microscope (Micro-CT) subsystem 5, an Ion grinder (Ion-Milling) subsystem 4, a Scanning Electron Microscope (SEM) subsystem 1 and a processor 7, wherein the X-ray microscope (Micro-CT) subsystem 5 is used for acquiring a three-dimensional image 31 of a sample 3 to be detected, the Ion grinder (Ion-Milling) subsystem 4 is used for emitting Ion beams to process the sample 3 to be detected to obtain a target section of a target area 32, the Scanning Electron Microscope (SEM) subsystem 1 is used for acquiring a two-dimensional image of the target section, and the processor 7 is used for carrying out three-dimensional reconstruction on the two-dimensional image to obtain a three-dimensional image 36 of the target area 32.
Specifically, as shown in fig. 1 to 7, the sample 3 to be measured is disposed on the sample stage 6, and the sample stage 6 can perform five-degree-of-freedom motion, where the five-degree-of-freedom motion includes: three-dimensional translation (X, Y and translation in the three Z directions), rotation about a central axis (R), and tilt (T).
The X-ray microscope (Micro-CT) subsystem 5 comprises an X-ray source 51 and an X-ray detector 52, wherein the X-ray source 51 and the X-ray detector 52 are respectively positioned on two sides of the sample 3 to be detected. Preferably, the X-ray source 51, the X-ray detector 52 and the sample 3 to be measured are arranged on the same straight line. The X-ray microscope (Micro-CT) subsystem 5 is used to acquire a three-dimensional image 31 of the sample 3 to be measured. The target area 32 can be determined quickly and accurately.
The Ion Milling (Ion-Milling) subsystem 4 is used for emitting Ion beams to process the sample 3 to be measured to obtain a target section of the target area 32, and the Ion Milling (Ion-Milling) subsystem 4 can process the sample 3 to be measured at a high speed to obtain a wide and deep cutting area 33, so that a high-quality cutting section can be obtained quickly.
The Scanning Electron Microscope (SEM) subsystem 1 is used to acquire two-dimensional images of a cross-section of an object. The Scanning Electron Microscope (SEM) subsystem 1 is located above the sample 3 to be detected, the Scanning Electron Microscope (SEM) subsystem 1 generates electron beams to act on the sample 3 to be detected, the target section is scanned, a two-dimensional image of the target section is obtained, and high-resolution detection of the sample 3 to be detected is achieved.
The included angle between the Ion beam emitted by the Ion Milling instrument (Ion-Milling) subsystem 4 and the irradiation axis of the electron beam emitted by the Scanning Electron Microscope (SEM) subsystem 1 is theta, and theta is more than or equal to 0 degree and less than or equal to 90 degrees. The angle between the Ion beam emitted by the Ion Milling subsystem 4 and the irradiation axis of the electron beam emitted by the Scanning Electron Microscope (SEM) subsystem 1 can be adjusted by mechanical means, such as by mechanical hand adjustment, rail adjustment, and other ways that can be adjusted, and those skilled in the art can select the available ways according to actual needs, and is not limited in detail herein.
In detail, the Ion mill (Ion-Milling) subsystem 4 can be tilted in pitch as shown in fig. 2 and 3, and the position relationship between the Ion mill (Ion-Milling) subsystem 4 and the sample 3 to be measured is shown.
As shown in fig. 2, when the Ion beam emitted from the Ion Milling subsystem 4 and the irradiation axis of the electron beam emitted from the Scanning Electron Microscope (SEM) subsystem 1 are in a right angle relationship with each other, the cross-sectional cutting of the sample 3 to be measured can be realized.
As shown in fig. 3, when the Ion beam emitted from the Ion Milling subsystem 4 and the electron beam irradiation axis emitted from the Scanning Electron Microscope (SEM) subsystem 1 are in an angle relationship with each other, the planar cutting of the sample 3 to be measured can be realized.
The processor 7 is in communication control connection with an X-ray microscope (Micro-CT) subsystem 5, an Ion Milling (Ion-Milling) subsystem 4 and a Scanning Electron Microscope (SEM) subsystem 1, and the processor 7 is used for performing three-dimensional reconstruction on the two-dimensional image to obtain a three-dimensional image 36 of the target area 32. The processor 7 may be a notebook, or a handheld mobile terminal, or a computing device such as a desktop computer.
The utility model discloses acquire the three-dimensional image 31 of the sample 3 that awaits measuring based on X-ray microscope (Micro-CT) subsystem 5, confirm target area 32 fast, process the target cross section that obtains target area 32 to the sample 3 that awaits measuring through Ion grinder (Ion-Milling) subsystem 4, and then Scanning Electron Microscope (SEM) subsystem 1 acquires the two-dimensional image of target cross section, obtains the three-dimensional formation of image 36 of the 3 inner structure of sample that awaits measuring through treater 7 at last. Because sample 3 that awaits measuring can be processed at a high speed to Ion grinder (Ion-Milling) subsystem 4, obtains wide and dark cutting area 33, can obtain a high-quality cutting cross section fast, so the utility model provides an imaging system can be quick, accurate realization 3 inner structure three-dimensional imaging 36 analysis of sample that awaits measuring of large tracts of land.
In some alternative embodiments, the Ion mill (Ion-Milling) subsystem 4 includes an Ion source device 41 and a baffle plate 42, the baffle plate 42 being disposed between the Ion source device 41 and the sample 3 to be tested. A baffle 42 for shielding the sample 3 to be measured, and an Ion-Milling (Ion-Milling) subsystem 4 for processing the part of the sample 3 to be measured which is not shielded by the baffle 42.
In some alternative embodiments, the Ion mill (Ion-Milling) subsystem 4 operates on the principle that an inert gas such as Ar, Kr, or Xe is filled into an Ion source discharge chamber and ionized, then an Ion beam is extracted and accelerated in a planar shape by a grid, the planar Ion beam with certain energy enters a sample chamber and is irradiated on the surface of the sample 3 to be measured, a large-area cross section without stress damage can be machined and cut, a high-quality cut cross section can be obtained, the possibility of deformation or damage of the sample 3 to be measured is lowest, and real structural information inside the sample 3 to be measured can be exposed.
Optionally, the Ion source device 41 of the Ion Milling subsystem 4 is used to generate a planar Ion beam for implementing large-area planar cutting of the sample 3 to be measured.
In some alternative embodiments, the baffle 42 is movably disposed between the ion source device 41 and the sample 3 to be tested.
A baffle 42 for shielding the sample 3 to be measured, and an Ion-Milling (Ion-Milling) subsystem 4 for processing the part of the sample 3 to be measured which is not shielded by the baffle 42.
Since the baffle 42 is movably disposed between the Ion source device 41 and the sample 3 to be measured, the baffle 42 can change the position for shielding the sample 3 to be measured, so as to change the position for processing and cutting the portion of the sample 3 to be measured by the Ion-Milling subsystem 4.
In some optional embodiments, the sample 3 to be measured is disposed on the sample stage 6, the sample stage 6 can move in five degrees of freedom, the baffle 42 is disposed on the sample stage 6, and the baffle 42 can move up and down relative to the sample stage 6.
The baffle 42 can change the position for shielding the sample 3 to be measured by lifting and moving relative to the sample table 6, thereby changing the position for processing and cutting the part of the sample 3 to be measured by the Ion-Milling subsystem 4.
In some alternative embodiments, the sample stage 6 includes a moving stage 62 and a rotating stage 61, the rotating stage 61 is disposed on the moving stage 62, the moving stage 62 can be translated and tilted (T) along three directions X, Y and Z, and the rotating stage 61 can be rotated (R) on the moving stage 62 around a central axis.
The baffle 42 is arranged on the moving platform 62, and the baffle 42 can move up and down relative to the moving platform 62, and the sample 3 to be tested is placed on the rotating platform 61.
When the moving platform 62 performs the translational movement and the tilting movement (T) along the directions X, Y and Z, the moving platform 62 drives the baffle 42 arranged on the moving platform 62, the rotating platform 61 and the sample 3 to be measured placed on the rotating platform 61 to move together.
When the rotary platform 61 rotates around the central axis (R), the rotary platform 61 drives the sample 3 to be measured placed on the rotary platform 61 to rotate around the central axis (R).
In some alternative embodiments, the shutter 42 is connected to a piezo ceramic controller that controls the shutter 42 to move with precision on the order of nanometers.
The movement of the baffle 42 is controlled by a piezoelectric ceramic controller, so that the movement control of the baffle 42 with the precision of nanometer level can be realized, and the high-precision positioning of the baffle 42 can be realized.
Since the baffle 42 is used to shield the sample 3 to be measured, an Ion-Milling (Ion-Milling) subsystem 4 is used to process the portion of the sample 3 to be measured that is not shielded by the baffle 42. A more accurate target cross-section of target region 32 may be obtained.
In some alternative embodiments, the X-ray microscope (Micro-CT) subsystem 5 comprises: transmission X-ray microscope.
In the present embodiment, the X-ray microscope (Micro-CT) subsystem 5 preferably employs a transmission X-ray microscope, which can perform tomography (CT) and directly observe a CT image from a screen.
In some alternative embodiments, a Scanning Electron Microscope (SEM) subsystem 1 is used to acquire two-dimensional images of a cross-section of the target. The Scanning Electron Microscope (SEM) subsystem 1 is located above the sample 3 to be detected, the Scanning Electron Microscope (SEM) subsystem 1 generates electron beams to act on the sample 3 to be detected, the target section is scanned, a two-dimensional image of the target section is obtained, and high-resolution detection of the sample 3 to be detected is achieved. Based on the plurality of target sections 34, a series of two-dimensional images can be formed, including at least Secondary Electron (SE) images and BackScattered electron (BSE) images. Based on the plurality of target sections 34 a series of two-dimensional images can be formed, and a processor 7 for three-dimensional reconstruction of the two-dimensional images resulting in a three-dimensional image 36 of the target region 32.
In some alternative embodiments, the Scanning Electron Microscope (SEM) subsystem 1 further comprises: energy spectrometer (EDS)2, spectrometer (WDS), electron backscatter diffraction analyzer (EBSD), cathode fluorescence spectrometer (CL).
The energy spectrometer (EDS)2 is used for obtaining the energy spectrum information of the sample 3 to be detected, the spectrometer (WDS) is used for obtaining the spectrum information of the sample 3 to be detected, the electron back scattering diffraction analyzer (EBSD) is used for obtaining the orientation information of the crystal grains of the sample 3 to be detected, and the cathode fluorescence spectrometer (CL) is used for obtaining the fluorescence information of the sample 3 to be detected.
In some optional embodiments, the processor 7 is further configured to determine a first region of the three-dimensional image 31 and position information of the first region;
an Ion-Milling (Ion-Milling) subsystem 4 for processing the portion of the sample 3 to be tested not obscured by the baffle 42 to expose or about to expose the first region;
an X-ray microscope (Micro-CT) subsystem 5, which is also used for acquiring a three-dimensional image 31 of the processed sample 3 to be detected;
the processor 7 is further configured to perform navigation correction on the first region based on the processed three-dimensional image 31 of the sample 3 to be detected to obtain a second region, and determine that the position information of the second region is the position information of the target region 32; the positional information of the target area 32 is used by the Ion mill (Ion-Milling) subsystem 4 to process the sample 3 to be measured.
Based on the above-mentioned imaging system, the utility model discloses still provide a sample detection imaging method, as shown in fig. 1 to 8 sample detection imaging method includes following step:
step S101, a three-dimensional image 31 of the sample 3 to be measured is acquired.
The X-ray microscope (Micro-CT) subsystem 5 comprises an X-ray source 51 and an X-ray detector 52, wherein the X-ray source 51 and the X-ray detector 52 are respectively positioned on two sides of the sample 3 to be detected.
As shown in fig. 4, a sample 3 to be measured is placed on a sample stage 6, an X-ray source 51 emits X-rays, which penetrate through the sample 3 to be measured and are transmitted to an X-ray detector 52, a series of projection images are obtained by the movement of the sample stage 6, the projection images are converted into a three-dimensional image 31 by operation, and the three-dimensional image 31 is used for quickly finding a navigation map of a target area 32 in subsequent observation.
In step S102, position information of the target region 32 is determined based on the three-dimensional image 31.
The target region 32 is a region where the sample 3 to be measured is detected. The processor 7 determines position information of the target area 32 from the three-dimensional image 31.
In some alternative embodiments, as shown in fig. 4 and 5, the processor 7 determines a first region of the three-dimensional image 31 and position information of the first region;
the baffle 42 is controlled by a piezoelectric ceramic controller to move to a target position, and the Ion-Milling subsystem 4 processes the part of the sample 3 to be detected which is not shielded by the baffle 42 so as to expose or be exposed to a first area;
acquiring a three-dimensional image 31 of the processed sample 3 to be detected through an X-ray microscope (Micro-CT) subsystem 5;
the processor 7 performs navigation correction on the first area based on the processed three-dimensional image 31 of the sample 3 to be detected to obtain a second area, and determines the position information of the second area as the position information of the target area 32; the positional information of the target area 32 is used by the Ion mill (Ion-Milling) subsystem 4 to process the sample 3 to be measured.
In this way, by performing navigation correction on the first region based on the processed three-dimensional image 31 of the sample 3 to be measured, correction of a navigation map deviation caused by deformation and displacement of the target region 32 when the sample 3 to be measured is processed can be achieved, damage to the target region 32 is reduced, and the accuracy of obtaining the three-dimensional image 31 of the target region 32 is improved.
In step S103, the sample 3 to be measured is processed by emitting a planar Ion beam by the Ion Milling subsystem 4 based on the position information so that the target cross section of the target region 32 is exposed.
In an alternative embodiment, the Ion mill (Ion-Milling) subsystem 4 emits a planar Ion beam to cut off a cutting region 33 above a target region 32 of the sample 3 to be measured, and the cutting position is adjusted by changing the positional relationship between the planar Ion beam emitted by the Ion mill (Ion-Milling) subsystem 4 and the sample 3 to be measured.
In an alternative embodiment, the Ion mill (Ion-Milling) subsystem 4 includes an Ion source device 41 and a baffle plate 42, the baffle plate 42 being disposed between the Ion source device 41 and the sample 3 to be tested. A baffle 42 for shielding the target area 32 of the sample 3 to be measured, and an Ion-Milling subsystem 4 for processing the part of the sample 3 to be measured that is not shielded by the baffle 42. Since the baffle 42 is movably disposed between the Ion source device 41 and the sample 3 to be measured, and the sample stage 6 can perform five-degree-of-freedom motion, the baffle 42 can change the position for shielding the sample 3 to be measured, so as to change the position for processing the part of the sample 3 to be measured by the Ion-Milling subsystem 4. Furthermore, the movement of the baffle 42 is controlled by a piezoelectric ceramic controller, so that the movement control of the baffle 42 with the precision of nanometer level can be realized, and the high-precision positioning of the baffle 42 can be realized.
As shown in fig. 5, a portion of the sample to be measured, which is not covered by the baffle above the target area 32, i.e. the area 33 to be cut, needs to be cut, so as to obtain a target cross section of the target area 32.
Step S104 is to acquire a plurality of two-dimensional images 35 of the target cross-section obtained by the multiple processing.
In some alternative embodiments, the target area 32 of the sample 3 to be tested is cut by the Ion-Milling subsystem 4 to obtain a first target cross-section; acquiring a first two-dimensional image of a first target cross section by using a Scanning Electron Microscope (SEM) subsystem 1; cutting a target area 32 of a sample 3 to be detected by using an Ion-Milling (Ion-Milling) subsystem 4 to obtain a second target section; acquiring a second two-dimensional image of a second target section by using a Scanning Electron Microscope (SEM) subsystem 1; and repeating the steps until the imaging of the target area 32 of the sample 3 to be detected is completed, so as to obtain a plurality of two-dimensional images 35 of the target cross sections of the sample 3 to be detected.
As shown in fig. 6, a plurality of target cross-sections 34 are obtained by multiple cuts using the Ion-Milling subsystem 4, and a two-dimensional image 35 of the plurality of target cross-sections 34 is acquired by the Scanning Electron Microscope (SEM) subsystem 1.
Step S105, three-dimensionally reconstructing the obtained two-dimensional image to obtain a three-dimensional image 36 of the target region 32.
As shown in fig. 7. In some alternative embodiments, the processor 7 performs a three-dimensional reconstruction of the acquired series of two-dimensional images to obtain a three-dimensional image 36 of the target region 32.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and although the present invention has been disclosed with reference to the above preferred embodiment, but not to limit the present invention, any person skilled in the art can make some changes or modifications to equivalent embodiments without departing from the scope of the present invention, and any simple modification, equivalent change and modification made to the above embodiments by the technical spirit of the present invention still fall within the scope of the present invention.
Claims (10)
1. An imaging system, characterized by: the method comprises the following steps:
an X-ray microscope subsystem, an ion grinder subsystem, a scanning electron microscope subsystem and a processor;
the X-ray microscope subsystem is used for acquiring a three-dimensional image of a sample to be detected;
the ion grinder subsystem is used for emitting ion beams to process the sample to be detected to obtain a target section of a target area;
the scanning electron microscope subsystem is used for acquiring a two-dimensional image of the target section;
and the processor is used for carrying out three-dimensional reconstruction on the two-dimensional image to obtain three-dimensional imaging of the target area.
2. The imaging system of claim 1, wherein: the ion grinder subsystem comprises an ion source device and a baffle plate, wherein the baffle plate is arranged between the ion source device and the sample to be detected.
3. The imaging system of claim 2, wherein: the ion source device is used for generating a plane-shaped ion beam.
4. The imaging system of claim 2, wherein: the baffle is movably arranged between the ion source device and the sample to be detected.
5. The imaging system of claim 4, wherein: the baffle is connected with a piezoelectric ceramic controller, and the piezoelectric ceramic controller controls the movement precision of the baffle to be in a nanometer level.
6. The imaging system of claim 2, wherein: the sample to be detected is arranged on a sample table, and the sample table can move in five degrees of freedom;
the baffle is arranged on the sample platform and can move up and down relative to the sample platform.
7. The imaging system of claim 1, wherein: the included angle between the ion beam emitted by the ion grinder subsystem and the electron beam irradiation axis emitted by the scanning electron microscope subsystem is theta, and theta is more than or equal to 0 degree and less than or equal to 90 degrees.
8. The imaging system of claim 1, wherein: the X-ray microscope subsystem includes: transmission X-ray microscope.
9. The imaging system of claim 2, wherein:
the processor is further configured to determine a first region of the three-dimensional image and position information of the first region;
the ion grinder subsystem is used for processing the part of the sample to be detected which is not shielded by the baffle plate so as to expose or be exposed;
the X-ray microscope subsystem is also used for acquiring a three-dimensional image of the processed sample to be detected;
the processor is further configured to perform navigation correction on the first region based on the processed three-dimensional image of the sample to be detected to obtain a second region, and determine that the position information of the second region is the position information of the target region; and the position information of the target area is used for processing the sample to be detected by the ion grinder subsystem.
10. The imaging system of any of claims 1-9, wherein: the scanning electron microscope subsystem further comprises:
the energy spectrometer is used for acquiring energy spectrum information of the sample to be detected;
the spectrometer is used for acquiring the spectrum information of the sample to be detected;
the electron back scattering diffraction analyzer is used for acquiring the crystal grain orientation information of the sample to be detected;
and the cathode fluorescence spectrometer is used for acquiring the fluorescence information of the sample to be detected.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024051009A1 (en) * | 2022-09-06 | 2024-03-14 | 纳克微束(北京)有限公司 | Three-dimensional imaging system based on multiple scanning |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024051009A1 (en) * | 2022-09-06 | 2024-03-14 | 纳克微束(北京)有限公司 | Three-dimensional imaging system based on multiple scanning |
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