CN212110410U - Novel pressure sensor - Google Patents
Novel pressure sensor Download PDFInfo
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- CN212110410U CN212110410U CN202020805562.4U CN202020805562U CN212110410U CN 212110410 U CN212110410 U CN 212110410U CN 202020805562 U CN202020805562 U CN 202020805562U CN 212110410 U CN212110410 U CN 212110410U
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Abstract
A novel pressure sensor is characterized in that: the circuit comprises a Wheatstone main bridge resistor R1, a Wheatstone main bridge resistor R2, a Wheatstone main bridge resistor R3, a Wheatstone main bridge resistor R4, a Wheatstone secondary bridge resistor R1 ', a Wheatstone secondary bridge resistor R2', a Wheatstone secondary bridge resistor R3 ', a Wheatstone secondary bridge resistor R4', a Wheatstone main bridge input power supply, a Wheatstone secondary bridge input power supply, a Wheatstone main bridge output, a Wheatstone secondary bridge output and a thin film; the Wheatstone main bridge is provided with a Wheatstone main bridge input power supply and a Wheatstone main bridge output end; the Wheatstone secondary bridge resistor R1 ', the Wheatstone secondary bridge resistor R2', the Wheatstone secondary bridge resistor R4 'and the Wheatstone secondary bridge resistor R3' are sequentially connected in series to form a Wheatstone secondary bridge, and the Wheatstone secondary bridge is provided with a Wheatstone secondary bridge input power supply and a Wheatstone secondary bridge output end. The utility model has the advantages that: principle simple structure, the precision is high, effectively realizes temperature compensation, and market prospect is extensive.
Description
Technical Field
The utility model relates to a sensor field, in particular to novel pressure sensor.
Background
Currently, thermal stress changes due to temperature changes affect pressure sensor stability. This patent will design a novel pressure sensor, compensate the stress variation that arouses because of temperature variation and other reasons.
The ambient temperature of the pressure sensor or packaging process can cause deformation of the product film, which is an undesirable source of stress. If the pressure sensor detects a change in stress due to an unknown cause, such as a change in temperature, an erroneous pressure value is generated. So in general, the pressure sensor needs to be compensated. A common method is to connect a compensation ASIC (integrated circuit) in which the temperature signal from an internal or external temperature sensor of the ASIC is compensated, which can be analog or digital. Another solution is to integrate the temperature sensor in the pressure sensor chip and to achieve compensation for the offset by adding a resistive characteristic to this function. Both methods require calibration of the compensated temperature coefficient, but are costly and have low throughput.
SUMMERY OF THE UTILITY MODEL
The utility model aims at overcoming above-mentioned problem, provide a novel pressure sensor specially.
At present, the stability of the pressure sensor is influenced by the thermal stress change caused by the temperature change, and a novel pressure sensor is designed to compensate the stress change caused by the temperature change and other reasons.
The utility model provides a novel pressure sensor, its characterized in that: the novel pressure sensor comprises a Wheatstone main bridge resistor R1, a Wheatstone main bridge resistor R2, a Wheatstone main bridge resistor R3, a Wheatstone main bridge resistor R4, a Wheatstone secondary bridge resistor R1 ', a Wheatstone secondary bridge resistor R2', a Wheatstone secondary bridge resistor R3 ', a Wheatstone secondary bridge resistor R4', a Wheatstone main bridge input power supply, a Wheatstone secondary bridge input power supply, a Wheatstone main bridge output, a Wheatstone secondary bridge output and a film;
wherein: the Wheatstone main bridge resistor R1, the Wheatstone main bridge resistor R2, the Wheatstone main bridge resistor R4 and the Wheatstone main bridge resistor R3 are sequentially connected in series to form a Wheatstone main bridge, and the Wheatstone main bridge is provided with a Wheatstone main bridge input power supply and a Wheatstone main bridge output end; the secondary bridge resistor R1 ', R2', R4 'and R3' are connected in series in sequence to form a secondary bridge, and the secondary bridge has a secondary bridge input power supply and a secondary bridge output; the film is arranged on the resistor and used for sensing external pressure.
Each resistor is a doped silicon or polysilicon material piece.
The film is a silicon film piece.
A thin film with four resistors was used, connected in a wheatstone bridge.
Mainly for sensing external pressure. The resistive material can be doped silicon, polysilicon.
The piezoresistive pressure sensor temperature compensation method is adopted, based on the design of a secondary Wheatstone bridge, the piezoresistive pressure sensor temperature compensation method is sensitive to mechanical stress caused by temperature change, and secondary Wheatstone bridge signals are used for carrying out temperature compensation on the piezoresistive pressure sensor; the secondary electric signal is derived from a secondary Wheatstone bridge on the sensitive film, the main Wheatstone bridge is sensitive to external stress, the secondary Wheatstone bridge can also be sensitive to external pressure, and the sensitivity of the pressure sensor can be enhanced by utilizing the signal of the secondary Wheatstone bridge.
A secondary wheatstone resistor bridge is designed that has a high sensitivity to thermally induced stresses while being insensitive to pressure. The ASIC can use the signal of the secondary bridge, which measures film stress directly, not temperature, to cancel the spurious signal of the primary signal. Thus bypassing sources of uncertainty, such as assembly/packaging packages, making compensation for offsets more efficient. The secondary bridge can also be pressure sensitive, and can be designed such that the secondary bridge signal has the same sign as the primary bridge signal, and in response to thermal stress, the secondary bridge signal has an opposite sign as the primary bridge signal. In this way, with appropriate correction coefficients, the two signals can be combined so that the overall sensitivity to thermal stress is zero, while the overall sensitivity to pressure is increased with respect to the main bridge.
A secondary Wheatstone bridge is designed, is insensitive to pressure, is only sensitive to stress caused by temperature change or stress change caused by other unknown reasons, and realizes a novel pressure sensor temperature compensation method.
The utility model has the advantages that:
novel pressure sensor, principle simple structure, the precision is high, effectively realizes temperature compensation, market prospect is extensive.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and embodiments:
FIG. 1 is a schematic diagram of a novel pressure sensor;
FIG. 2 is a schematic view of the installation of the novel pressure sensor;
FIG. 3 is a schematic design;
in the figure, 1 is a Wheatstone main bridge resistor R1; 2 is a Wheatstone main bridge resistor R2; 3 is a Wheatstone main bridge resistor R3; 4 is a Wheatstone main bridge resistor R4; 5 is a wheatstone secondary bridge resistor R1'; 6 is a Wheatstone secondary bridge resistor R2'; 7 is a Wheatstone secondary bridge resistor R3'; 8 is a Wheatstone secondary bridge resistor R4'; a 9-bit Wheatstone main bridge input power supply; 10 is a Wheatstone secondary bridge input power supply; 11 is the Wheatstone main bridge output; 12 is the Wheatstone secondary bridge output; a thin film 13 is a silicon thin film, a resistor 14 is a thin film with four resistors, and the thin films are connected in a Wheatstone bridge.
Detailed Description
Example 1
The utility model provides a novel pressure sensor, its characterized in that: the novel pressure sensor comprises a Wheatstone main bridge resistor R1, a Wheatstone main bridge resistor R2, a Wheatstone main bridge resistor R3, a Wheatstone main bridge resistor R4, a Wheatstone secondary bridge resistor R1 ', a Wheatstone secondary bridge resistor R2', a Wheatstone secondary bridge resistor R3 ', a Wheatstone secondary bridge resistor R4', a Wheatstone main bridge input power supply, a Wheatstone secondary bridge input power supply, a Wheatstone main bridge output, a Wheatstone secondary bridge output and a film;
wherein: the Wheatstone main bridge resistor R1, the Wheatstone main bridge resistor R2, the Wheatstone main bridge resistor R4 and the Wheatstone main bridge resistor R3 are sequentially connected in series to form a Wheatstone main bridge, and the Wheatstone main bridge is provided with a Wheatstone main bridge input power supply and a Wheatstone main bridge output end; the secondary bridge resistor R1 ', R2', R4 'and R3' are connected in series in sequence to form a secondary bridge, and the secondary bridge has a secondary bridge input power supply and a secondary bridge output; the film is arranged on the resistor and used for sensing external pressure.
Each resistor is a doped silicon or polysilicon material piece.
The film is a silicon film piece.
A thin film with four resistors was used, connected in a wheatstone bridge.
Mainly for sensing external pressure. The resistive material can be doped silicon, polysilicon.
The piezoresistive pressure sensor temperature compensation method is adopted, based on the design of a secondary Wheatstone bridge, the piezoresistive pressure sensor temperature compensation method is sensitive to mechanical stress caused by temperature change, and secondary Wheatstone bridge signals are used for carrying out temperature compensation on the piezoresistive pressure sensor; the secondary electric signal is derived from a secondary Wheatstone bridge on the sensitive film, the main Wheatstone bridge is sensitive to external stress, the secondary Wheatstone bridge can also be sensitive to external pressure, and the sensitivity of the pressure sensor can be enhanced by utilizing the signal of the secondary Wheatstone bridge.
A secondary wheatstone resistor bridge is designed that has a high sensitivity to thermally induced stresses while being insensitive to pressure. The ASIC can use the signal of the secondary bridge, which measures film stress directly, not temperature, to cancel the spurious signal of the primary signal. Thus bypassing sources of uncertainty, such as assembly/packaging packages, making compensation for offsets more efficient. The secondary bridge can also be pressure sensitive, and can be designed such that the secondary bridge signal has the same sign as the primary bridge signal, and in response to thermal stress, the secondary bridge signal has an opposite sign as the primary bridge signal. In this way, with appropriate correction coefficients, the two signals can be combined so that the overall sensitivity to thermal stress is zero, while the overall sensitivity to pressure is increased with respect to the main bridge.
A secondary Wheatstone bridge is designed, is insensitive to pressure, is only sensitive to stress caused by temperature change or stress change caused by other unknown reasons, and realizes a novel pressure sensor temperature compensation method.
Example 2
The utility model provides a novel pressure sensor, its characterized in that: the novel pressure sensor comprises a Wheatstone main bridge resistor R1, a Wheatstone main bridge resistor R2, a Wheatstone main bridge resistor R3, a Wheatstone main bridge resistor R4, a Wheatstone secondary bridge resistor R1 ', a Wheatstone secondary bridge resistor R2', a Wheatstone secondary bridge resistor R3 ', a Wheatstone secondary bridge resistor R4', a Wheatstone main bridge input power supply, a Wheatstone secondary bridge input power supply, a Wheatstone main bridge output, a Wheatstone secondary bridge output and a film;
wherein: the Wheatstone main bridge resistor R1, the Wheatstone main bridge resistor R2, the Wheatstone main bridge resistor R4 and the Wheatstone main bridge resistor R3 are sequentially connected in series to form a Wheatstone main bridge, and the Wheatstone main bridge is provided with a Wheatstone main bridge input power supply and a Wheatstone main bridge output end; the secondary bridge resistor R1 ', R2', R4 'and R3' are connected in series in sequence to form a secondary bridge, and the secondary bridge has a secondary bridge input power supply and a secondary bridge output; the film is arranged on the resistor and used for sensing external pressure.
Each resistor is a doped silicon or polysilicon material piece.
Mainly for sensing external pressure. The resistive material can be doped silicon, polysilicon.
The piezoresistive pressure sensor temperature compensation method is adopted, based on the design of a secondary Wheatstone bridge, the piezoresistive pressure sensor temperature compensation method is sensitive to mechanical stress caused by temperature change, and secondary Wheatstone bridge signals are used for carrying out temperature compensation on the piezoresistive pressure sensor; the secondary electric signal is derived from a secondary Wheatstone bridge on the sensitive film, the main Wheatstone bridge is sensitive to external stress, the secondary Wheatstone bridge can also be sensitive to external pressure, and the sensitivity of the pressure sensor can be enhanced by utilizing the signal of the secondary Wheatstone bridge.
A secondary wheatstone resistor bridge is designed that has a high sensitivity to thermally induced stresses while being insensitive to pressure. The ASIC can use the signal of the secondary bridge, which measures film stress directly, not temperature, to cancel the spurious signal of the primary signal. Thus bypassing sources of uncertainty, such as assembly/packaging packages, making compensation for offsets more efficient. The secondary bridge can also be pressure sensitive, and can be designed such that the secondary bridge signal has the same sign as the primary bridge signal, and in response to thermal stress, the secondary bridge signal has an opposite sign as the primary bridge signal. In this way, with appropriate correction coefficients, the two signals can be combined so that the overall sensitivity to thermal stress is zero, while the overall sensitivity to pressure is increased with respect to the main bridge.
A secondary Wheatstone bridge is designed, is insensitive to pressure, is only sensitive to stress caused by temperature change or stress change caused by other unknown reasons, and realizes a novel pressure sensor temperature compensation method.
Example 3
The utility model provides a novel pressure sensor, its characterized in that: the novel pressure sensor comprises a Wheatstone main bridge resistor R1, a Wheatstone main bridge resistor R2, a Wheatstone main bridge resistor R3, a Wheatstone main bridge resistor R4, a Wheatstone secondary bridge resistor R1 ', a Wheatstone secondary bridge resistor R2', a Wheatstone secondary bridge resistor R3 ', a Wheatstone secondary bridge resistor R4', a Wheatstone main bridge input power supply, a Wheatstone secondary bridge input power supply, a Wheatstone main bridge output, a Wheatstone secondary bridge output and a film;
wherein: the Wheatstone main bridge resistor R1, the Wheatstone main bridge resistor R2, the Wheatstone main bridge resistor R4 and the Wheatstone main bridge resistor R3 are sequentially connected in series to form a Wheatstone main bridge, and the Wheatstone main bridge is provided with a Wheatstone main bridge input power supply and a Wheatstone main bridge output end; the secondary bridge resistor R1 ', R2', R4 'and R3' are connected in series in sequence to form a secondary bridge, and the secondary bridge has a secondary bridge input power supply and a secondary bridge output; the film is arranged on the resistor and used for sensing external pressure.
The piezoresistive pressure sensor temperature compensation method is adopted, based on the design of a secondary Wheatstone bridge, the piezoresistive pressure sensor temperature compensation method is sensitive to mechanical stress caused by temperature change, and secondary Wheatstone bridge signals are used for carrying out temperature compensation on the piezoresistive pressure sensor; the secondary electric signal is derived from a secondary Wheatstone bridge on the sensitive film, the main Wheatstone bridge is sensitive to external stress, the secondary Wheatstone bridge can also be sensitive to external pressure, and the sensitivity of the pressure sensor can be enhanced by utilizing the signal of the secondary Wheatstone bridge.
A secondary wheatstone resistor bridge is designed that has a high sensitivity to thermally induced stresses while being insensitive to pressure. The ASIC can use the signal of the secondary bridge, which measures film stress directly, not temperature, to cancel the spurious signal of the primary signal. Thus bypassing sources of uncertainty, such as assembly/packaging packages, making compensation for offsets more efficient. The secondary bridge can also be pressure sensitive, and can be designed such that the secondary bridge signal has the same sign as the primary bridge signal, and in response to thermal stress, the secondary bridge signal has an opposite sign as the primary bridge signal. In this way, with appropriate correction coefficients, the two signals can be combined so that the overall sensitivity to thermal stress is zero, while the overall sensitivity to pressure is increased with respect to the main bridge.
A secondary Wheatstone bridge is designed, is insensitive to pressure, is only sensitive to stress caused by temperature change or stress change caused by other unknown reasons, and realizes a novel pressure sensor temperature compensation method.
Claims (3)
1. A novel pressure sensor is characterized in that: the novel pressure sensor comprises a Wheatstone main bridge resistor R1, a Wheatstone main bridge resistor R2, a Wheatstone main bridge resistor R3, a Wheatstone main bridge resistor R4, a Wheatstone secondary bridge resistor R1 ', a Wheatstone secondary bridge resistor R2', a Wheatstone secondary bridge resistor R3 ', a Wheatstone secondary bridge resistor R4', a Wheatstone main bridge input power supply, a Wheatstone secondary bridge input power supply, a Wheatstone main bridge output, a Wheatstone secondary bridge output and a film;
wherein: the Wheatstone main bridge resistor R1, the Wheatstone main bridge resistor R2, the Wheatstone main bridge resistor R4 and the Wheatstone main bridge resistor R3 are sequentially connected in series to form a Wheatstone main bridge, and the Wheatstone main bridge is provided with a Wheatstone main bridge input power supply and a Wheatstone main bridge output end; the secondary bridge resistor R1 ', R2', R4 'and R3' are connected in series in sequence to form a secondary bridge, and the secondary bridge has a secondary bridge input power supply and a secondary bridge output; the film is arranged on the resistor and used for sensing external pressure.
2. The novel pressure sensor of claim 1 wherein: each resistor is a doped silicon or polysilicon material piece.
3. The novel pressure sensor of claim 1 wherein: the film is a silicon film piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020805562.4U CN212110410U (en) | 2020-05-15 | 2020-05-15 | Novel pressure sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020805562.4U CN212110410U (en) | 2020-05-15 | 2020-05-15 | Novel pressure sensor |
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| CN212110410U true CN212110410U (en) | 2020-12-08 |
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| CN202020805562.4U Active CN212110410U (en) | 2020-05-15 | 2020-05-15 | Novel pressure sensor |
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- 2020-05-15 CN CN202020805562.4U patent/CN212110410U/en active Active
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