CN212086210U - Take transmission drive circuit and optical module of control by temperature change - Google Patents
Take transmission drive circuit and optical module of control by temperature change Download PDFInfo
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- CN212086210U CN212086210U CN202021266809.6U CN202021266809U CN212086210U CN 212086210 U CN212086210 U CN 212086210U CN 202021266809 U CN202021266809 U CN 202021266809U CN 212086210 U CN212086210 U CN 212086210U
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Abstract
The utility model discloses a transmission drive circuit with temperature control and an optical module, which comprises an electrical interface unit, a DML drive circuit, an MCU circuit, a TEC drive circuit and a transmission assembly; the TEC driving circuit is respectively connected with the MCU circuit and the emission component; the DML drive circuit is respectively connected with the MCU circuit, the emission component, and circuits among the MCU circuit and the TEC drive circuit; the electric interface unit is respectively connected with the DML drive circuit, the MCU circuit and circuits between the DML drive circuit and the MCU circuit; the utility model discloses a add TEC temperature control to DML, thereby realize that equidistant MWDM of non-and equidistant LAN-WDM wavelength drift scope requires, MWDM realizes 12 ripples at CWDM wavelength deviation 3.5nm, LAN-WDM selects one section low dispersion and interval 4.5nm wavelength in the O wave band ripples and realizes 12 ripples, can solve 5G spectrum resource singleness, the nervous problem of service capacity demand, WDM multiplexing technique simultaneously can also solve operator's net distribution optical fiber resource nervous problem.
Description
Technical Field
The embodiment of the utility model provides a relate to optical communication technical field, especially relate to a take transmission drive circuit and optical module of control by temperature change.
Background
As is known, the architecture of RAN (Radio Access Network) is changed because 5G is required to cope with large bandwidth and low delay application. The 5G RAN evolves from a two-stage structure of BBU (Building Base band Unit), RRU (Remote Radio Unit, Radio frequency processing Unit) to three-stage structures of CU (Centralized Unit), DU (distributed Unit ) and AAU (Active Antenna Unit) of the 4G/LTE network, and accordingly, the forwarding network is also divided into three parts, where between the AAU and the DU is Fronthaul (Fronthaul), between the DU and the CU is middlewal, and above the CU is Backhaul (Backhaul).
In a 5G fronthaul network, the WDM (Wavelength Division Multiplexing) networking scheme is adopted to greatly reduce the consumption of optical fiber resources, so that the WDM networking scheme becomes the preferred scheme of the 5G fronthaul network in an area with a shortage of optical fiber resources.
CWDM (sparse Wavelength Division multiplexing, also called Coarse Wavelength Division multiplexing) is a low-cost WDM transmission technology facing the metro access layer, and 18 wavelengths are available. At present, a 5G frequency band of a macro station in a 5G forwarding network needs to use 3 groups of antennas for 3 paths of service transmission. If 5G service transmission of 2 frequency bands needs to be realized, 3 paths of service transmission need to be added. For the 25G optical module which is relatively mature in the market, the first 6 waves adopt 6 wavelengths of 1271nm, 1291nm, 1311nm, 1331nm, 1351nm and 1371nm near an O wave band, and the last 6 waves adopt 6 wavelengths of 1471nm, 1491nm, 1511nm, 1531nm, 1551nm and 1571nm near a C wave band. Wherein, O wave band dispersion is low, choose for use DML Laser (direct Modulated Laser), but C wave band dispersion is great, can only choose for use EML Laser (electro-absorption Modulated Laser), and 25G EML CWDM chip resource is scarce, and the technical difficulty is great, and the cost is more than 5 times of DML Laser again at least, and this cost reduction demand that obviously does not conform to the operator.
Accordingly, the prior art is yet to be improved and developed.
SUMMERY OF THE UTILITY MODEL
The utility model provides a take transmission drive circuit and optical module of control by temperature change to solve the not enough of prior art.
In order to achieve the above object, the present invention provides the following technical solutions:
in a first aspect, an embodiment of the present invention provides a transmission driving circuit with temperature control, including an electrical interface unit, a DML driving circuit, an MCU circuit, a TEC driving circuit, and a transmission assembly; wherein,
the TEC driving circuit is respectively connected with the MCU circuit and the emission component;
the DML drive circuit is respectively connected with the MCU circuit, the emission component, and circuits among the MCU circuit and the TEC drive circuit;
the electric interface unit is respectively connected with the DML drive circuit, the MCU circuit and circuits between the DML drive circuit and the MCU circuit;
the electrical interface unit is used for receiving an input electrical signal;
the DML drive circuit is used for generating bias current and modulation current under the control of the MCU circuit and sending the bias current and the modulation current to the transmitting component;
the transmitting component is used for receiving the electric signal from the electrical interface unit and converting the electric signal into an optical signal to be output according to the driving of the bias current and the modulation current;
the MCU circuit is used for sampling and monitoring the temperature of the transmitting component in real time;
the TEC driving circuit is used for adjusting the temperature of the emission component under the control of the MCU circuit.
Furthermore, in the emission driving circuit with temperature control, a TD + pin of the electrical interface unit is connected with a TDIP pin of the DML driving circuit;
the TD-pin of the electrical interface unit is connected with the TDIN pin of the DML driving circuit;
the VCCT pin of the electrical interface unit is respectively connected with the VCC33 pin of the DML driving circuit, the SCL _ M pin of the MCU circuit and the SDA _ M pin of the MCU circuit;
a TX _ DISable pin of the electrical interface unit is respectively connected with a TX _ DIS pin of the MCU circuit and a TXDIS pin of the DML driving circuit;
an SDA pin of the electrical interface unit is connected with an SDA pin of the MCU circuit;
and the SCL pin of the electrical interface unit is connected with the SCL pin of the MCU circuit.
Furthermore, in the emission driving circuit with temperature control, an SCL pin of the DML driving circuit is connected with an SCL _ M pin of the MCU circuit;
the SDA pin of the DML driving circuit is connected with the SDA _ M pin of the MCU circuit;
an LI pin of the DML driving circuit is connected with an LO pin of the DML driving circuit through a first inductor;
the PMSVC pin of the DML driving circuit is grounded through a first capacitor;
an SVCC pin of the DML driving circuit is connected between a PMSVCC pin of the DML driving circuit and the first capacitor;
an OUTK pin of the DML driving circuit is connected with an LD-pin of the transmitting component;
the OUTA pin of the DML driving circuit is connected with the LD + pin of the transmitting component;
the VCCTA pin of the DML driving circuit is connected between the OUTA pin of the DML driving circuit and the LD + pin of the transmitting component through an anti-interference device;
the VCCTK pin of the DML driving circuit is connected between the VCCTA pin of the DML driving circuit and the anti-interference device through a second capacitor;
and the MDIN pin of the DML driving circuit is connected with the PD-pin of the emission component.
Furthermore, in the emission driving circuit with temperature control, a Vref pin of the MCU circuit is connected with an Rth + pin of the emission component through a first resistor and a second resistor which are connected in series;
a Temp _ ADC pin of the MCU circuit is connected between the first resistor and the second resistor;
a Temp _ DAC pin of the MCU circuit is connected with a CTL pin of the TEC drive circuit;
an SCL _ M pin of the MCU circuit is connected with an SCL pin of the TEC driving circuit;
and the SDA _ M pin of the MCU circuit is connected with the SDA pin of the TEC driving circuit.
Furthermore, in the emission driving circuit with temperature control, a VOS pin of the TEC driving circuit is connected to a TEC-pin of the emission component;
a VO1 pin of the TEC driving circuit is connected with a TEC + pin of the emission component;
a PGND pin of the TEC driving circuit is grounded;
and the SW pin of the TEC driving circuit is connected between the VOS pin of the TEC driving circuit and the TEC-pin of the emission component through a second inductor.
Furthermore, the emission driving circuit with the temperature control also comprises a third capacitor;
one end of the third capacitor is connected between the second inductor and the VOS pin of the TEC driving circuit, and the other end of the third capacitor is grounded.
Furthermore, the emission driving circuit with temperature control also comprises a fourth capacitor;
one end of the fourth capacitor is connected between the pin VO1 of the TEC driving circuit and the pin TEC + of the emission component, and the other end of the fourth capacitor is grounded.
Furthermore, in the emission driving circuit with the temperature control function, a PD +/Rth-1 pin, a GND1 pin, a GND2 pin and a PD +/Rth-2 pin of the emission component are all grounded;
the PD +/Rth-1 pin, the TEC-pin, the TEC + pin, the GND1 pin, the LD-pin, the LD + pin, the GND2 pin, the PD-pin, the Rth + pin and the PD +/Rth-2 pin are sequentially arranged.
Furthermore, in the emission driving circuit with temperature control, the anti-interference device is ferrite beads.
In a second aspect, an embodiment of the present invention provides an optical module, including a transmission driving circuit with temperature control as described in the first aspect.
The embodiment of the utility model provides a pair of take transmission drive circuit and optical module of control by temperature change, through increasing TEC temperature control, it is controllable to realize wavelength drift scope, thereby realize equidistant MWDM and equidistant LAN-WDM wavelength drift scope requirement, MWDM realizes 12 ripples at CWDM wavelength migration + -3.5 nm, LAN-WDM selects one section low dispersion and interval 4.5nm wavelength in O wave band ripples and realizes 12 ripples, can solve 5G spectrum resource singleness, the nervous problem of service capacity demand, WDM multiplexing technique simultaneously, can also solve operator's net distribution optical fiber resource nervous problem.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without inventive exercise.
Fig. 1 is a schematic diagram of a functional module of an emission driving circuit with temperature control according to an embodiment of the present invention;
fig. 2 is a schematic circuit diagram of a transmission driving circuit with temperature control according to an embodiment of the present invention;
fig. 3 is a schematic circuit diagram of a DML driving circuit according to an embodiment of the present invention;
fig. 4 is a timing diagram of a TEC driving circuit according to an embodiment of the present invention.
Detailed Description
In order to make the objects, features and advantages of the present invention more obvious and understandable, the embodiments of the present invention are clearly and completely described with reference to the drawings in the embodiments of the present invention, and obviously, the embodiments described below are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
In the description of the present invention, it is to be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. When a component is referred to as being "disposed on" another component, it can be directly on the other component or intervening components may also be present.
Furthermore, the terms "long", "short", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, and are only for convenience of describing the present invention, but do not indicate or imply that the device or element referred to must have the specific orientation, operate in the specific orientation configuration, and thus, should not be construed as limiting the present invention.
The technical solution of the present invention is further explained by the following embodiments with reference to the accompanying drawings.
Example one
Referring to fig. 1, an embodiment of the present invention provides a transmission driving circuit with temperature control, including an electrical interface unit J1, a DML driving circuit U1, an MCU circuit U3, a TEC driving circuit U4, and a transmission assembly U2; wherein,
the TEC driving circuit U4 is respectively connected with the MCU circuit U3 and the emission component U2;
the DML drive circuit U1 is respectively connected with the MCU circuit U3, the emission component U2, and circuits between the MCU circuit U3 and the TEC drive circuit U4;
the electrical interface unit J1 is respectively connected with the DML drive circuit U1, the MCU circuit U3, and the circuits between the DML drive circuit U1 and the MCU circuit U3;
the electrical interface unit J1 is used for receiving input electrical signals;
the DML driving circuit U1 is used for generating a bias current and a modulation current under the control of the MCU circuit U3 and sending the bias current and the modulation current to the emitting component U2;
the transmitting component U2 is used for receiving the electric signal from the electrical interface unit J1 and converting the electric signal into optical signal output according to the driving of the bias current and the modulation current;
the MCU circuit U3 is used for sampling and monitoring the temperature of the transmitting component U2 in real time;
the TEC driving circuit U4 is used for adjusting the temperature of the emitting component U2 under the control of the MCU circuit U3.
It should be noted that the AAU or BBU reads information of the MCU circuit U3 through the Slave IIC (S _ IIC), and the MCU circuit U3 implements register configuration and reading of the TEC driver circuit U4 and the DML driver circuit U1 by using the Master IIC (M _ IIC). The internal CDR of the DML driving circuit U1 is powered by 1.8V and is realized by a DCDC buck circuit, so that the overall power consumption of the chip can be effectively reduced and the high-speed signal transmission is guaranteed. The output driving end of the high-speed differential line adopts a direct-current coupling mode, so that the power consumption is saved compared with an alternating-current coupling mode; the LD positive voltage of the transmitting component U2 (laser) is provided with a bias current and a forward voltage by the output of an internal DCDC Buck-Boost conversion circuit of the DML driving circuit U1, and the LD positive voltage can be automatically adjusted to keep the voltage of the LD negative terminal constant all the time.
The present embodiment provides a solution for a laser driving circuit of DML plus TEC (Thermal Electronic Cooler) according to the requirements of operators and equipment manufacturers for non-equidistant MWDM and equally spaced LWDM optical modules. The TEC temperature control technology can realize controllable wavelength drift range and doubled capacity, one core of a station can transmit 6 multiplied by 25G optical signals, and optical fiber resources can be effectively saved.
Specifically, in this embodiment, on the basis of the MWDM technology 25G CWDM front 6 waves (1271nm, 1291nm, 1311nm, 1331nm, 1351nm and 1371nm), by adding TEC temperature control, each wavelength is shifted by 3.5nm wavelength to form 12 wavelengths. The dispersion advantages of the first 6 waves of the CWDM are fully exerted, so that the transmission performance is greatly improved, and the optical power budget of the link is over 8.5 dB.
Referring to fig. 2, in the present embodiment, the TD + pin of the electrical interface unit J1 is connected to the TDIP pin of the DML driving circuit U1;
a TD-pin of the electrical interface unit J1 is connected with a TDIN pin of the DML drive circuit U1;
the VCCT pin of the electrical interface unit J1 is respectively connected with the VCC33 pin of the DML drive circuit U1, the SCL _ M pin of the MCU circuit U3 and the SDA _ M pin of the MCU circuit U3; a fourth resistor R4 is connected in series between a VCCT pin of the electrical interface unit J1 and an SCL _ M pin of the MCU circuit U3, and a third resistor R3 is connected in series between a VCCT pin of the electrical interface unit J1 and an SDA _ M pin of the MCU circuit U3;
the TX _ Disable pin of the electrical interface unit J1 is respectively connected with the TX _ DIS pin of the MCU circuit U3 and the TXDIS pin of the DML drive circuit U1;
an SDA pin of the electrical interface unit J1 is connected with an SDA pin of the MCU circuit U3;
the SCL pin of the electrical interface unit J1 is connected with the SCL pin of the MCU circuit U3.
Preferably, an SCL pin of the DML driving circuit U1 is connected to an SCL _ M pin of the MCU circuit U3;
an SDA pin of the DML driving circuit U1 is connected with an SDA _ M pin of the MCU circuit U3;
an LI pin of the DML driving circuit U1 is connected with an LO pin of the DML driving circuit U1 through a first inductor L1;
the PMSVC pin of the DML driving circuit U1 is grounded through a first capacitor C1;
an SVCC pin of the DML driving circuit U1 is connected between a PMSVCC pin of the DML driving circuit U1 and the first capacitor C1;
an OUTK pin of the DML driving circuit U1 is connected with an LD-pin of the transmitting component U2;
the OUTA pin of the DML driving circuit U1 is connected with the LD + pin of the transmitting component U2;
the VCCTA pin of the DML drive circuit U1 is connected between the OUTA pin of the DML drive circuit U1 and the LD + pin of the launch component U2 through an anti-jamming device;
the VCCTK pin of the DML driving circuit U1 is connected between the VCCTA pin of the DML driving circuit U1 and the anti-jamming device through a second capacitor C2;
the MDIN pin of the DML driving circuit U1 is connected with the PD-pin of the emitting component U2.
It should be noted that the first inductor L1 and the first capacitor C1 are essential components of the Buck-Boost, specifically, the first inductor L1 is an energy storage inductor, and the first capacitor C1 is a decoupling filter capacitor.
In this embodiment, the anti-jamming device is a bias current filter network, and in addition, the anti-jamming device also isolates the transmission function of high-frequency signals, the second capacitor C2 provides impedance matching for the internal differential drive output circuit, and the MDIN pin of the DML drive circuit U1 provides a forward bias voltage for the PD-of the emitter assembly U2.
Illustratively, the anti-interference device adopts a ferrite bead FB 1.
Preferably, the Vref pin of the MCU circuit U3 is connected to the Rth + pin of the transmitting component U2 through a first resistor R1 and a second resistor R2 connected in series;
the Temp _ ADC pin of the MCU circuit U3 is connected between the first resistor R1 and the second resistor R2;
a Temp _ DAC pin of the MCU circuit U3 is connected with a CTL pin of the TEC drive circuit U4;
an SCL _ M pin of the MCU circuit U3 is connected with an SCL pin of the TEC driving circuit U4;
the SDA _ M pin of the MCU circuit U3 is connected with the SDA pin of the TEC driving circuit U4.
Preferably, the VOS pin of the TEC drive circuit U4 is connected to the TEC-pin of the emitter assembly U2;
a VO1 pin of the TEC driving circuit U4 is connected with a TEC + pin of the emission component U2;
a PGND pin of the TEC driving circuit U4 is grounded;
the SW pin of the TEC driving circuit U4 is connected between the VOS pin of the TEC driving circuit U4 and the TEC-pin of the emitting component U2 through a second inductor L2.
It should be noted that, as shown in fig. 2, the MCU circuit U3 provides Vref (2.4V) reference voltage for the emission component U2, and samples and monitors the internal temperature of the emission component U2 in real time through a Temp _ ADC pin of the MCU by using a resistor voltage division manner in which a first resistor R1 is connected in series with a second resistor R2, and then the MCU circuit U3 compares the difference between the sampled temperature and a target temperature, and adjusts the voltage of the CTL pin of the TEC drive circuit U4 in real time through the Temp _ DAC pin by using a PID algorithm, so as to change the state of the voltage at two ends of the TEC, thereby achieving the purpose of cooling or heating.
Preferably, the emission driving circuit with temperature control further comprises a third capacitor C3 and a fourth capacitor C4;
one end of the third capacitor C3 is connected between the second inductor L2 and the VOS pin of the TEC drive circuit U4, and the other end is grounded.
One end of the fourth capacitor C4 is connected between the VO1 pin of the TEC drive circuit U4 and the TEC + pin of the emitter assembly U2, and the other end is grounded.
In the embodiment, the PD +/Rth-1 pin, the GND1 pin, the GND2 pin and the PD +/Rth-2 pin of the emitting component U2 are all grounded;
and the PD +/Rth-1 pin, the TEC-pin, the TEC + pin, the GND1 pin, the LD-pin, the LD + pin, the GND2 pin, the PD-pin, the Rth + pin and the PD +/Rth-2 pin are sequentially arranged.
Referring to fig. 3, a pmstvcc pin of the DML driver circuit U1 is a Buck-Boost voltage output port, and is output from a VCCTA pin to an LD + through an internal MOS switch after being input to an SVCC pin port, so as to control the MOS switch by configuring a register of the DML driver circuit U1, thereby achieving the purpose of whether to emit light.
As shown in fig. 4, when the pin VO1 is connected to the TEC + pin, the pin VOs is connected to the TEC-pin, and the module is just powered on, the pin VO1 and the pin VOs of the TEC driving circuit U4 gradually increase from 0V to Vmid (fixed voltage 1.5V), and then control of the CTL pin starts to be performed. When the voltage of the CTL pin is more than 1.25V, the voltage of the VO1 pin is in a Sink current mode, the voltage of the VOS pin and the voltage of the VO1 pin simultaneously drop to the lowest value, then the voltage of the VO1 pin is constant, and the voltage of the VOS pin gradually rises from the minimum value to reach the target temperature voltage capable of heating. When the voltage of the CTL pin is less than 1.25V, the VO1 pin is in a Source current mode, the voltages of the VOS pin and the VO1 pin simultaneously rise to the highest value, then the VO1 pin is constant, and the voltage of the VOS pin gradually drops from the maximum value to the target temperature voltage capable of refrigerating.
The embodiment of the utility model provides a pair of take transmission drive circuit of control by temperature change, through increasing TEC temperature control, it is controllable to realize wavelength drift scope, thereby realize equidistant MWDM and equidistant LAN-WDM wavelength drift scope requirement, MWDM realizes 12 ripples at CWDM wavelength migration + -3.5 nm, LAN-WDM selects one section low dispersion and interval 4.5nm wavelength in O wave band ripples and realizes 12 ripples, can solve 5G spectrum resource singleness, the nervous problem of service capacity demand, WDM multiplexing technique simultaneously, can also solve operator's net distribution optical fiber resource nervous problem.
Example two
The embodiment of the utility model provides an optical module, include as embodiment one take the transmission drive circuit of control by temperature change.
The optical module in this embodiment is a 25G fronthaul optical module.
It is worth noting, because the utility model discloses the optical module has contained embodiment one take the whole embodiments of the transmission drive circuit of control by temperature change, consequently the utility model provides an optical module has all beneficial effects of above-mentioned laser drive circuit, and this is no longer repeated here.
The foregoing description of the embodiments has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the disclosure. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but, where applicable, are interchangeable and can be used in a selected embodiment, even if not specifically shown or described. The same elements or features may also vary in many respects. Such variations are not to be regarded as a departure from the disclosure, and all such modifications are intended to be included within the scope of the disclosure.
Example embodiments are provided so that this disclosure will be thorough and will fully convey the scope to those skilled in the art. Numerous details are set forth, such as examples of specific parts, devices, and methods, in order to provide a thorough understanding of embodiments of the present disclosure. It will be apparent to those skilled in the art that specific details need not be employed, that example embodiments may be embodied in many different forms and that neither should be construed to limit the scope of the disclosure. In certain example embodiments, well-known processes, well-known device structures, and well-known technologies are not described in detail.
The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises" and "comprising" are intended to be inclusive and therefore specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring their performance in the particular order discussed and illustrated, unless explicitly indicated as an order of performance. It should also be understood that additional or alternative steps may be employed.
When an element or layer is referred to as being "on" … … "," engaged with "… …", "connected to" or "coupled to" another element or layer, it can be directly on, engaged with, connected to or coupled to the other element or layer, or intervening elements or layers may also be present. In contrast, when an element or layer is referred to as being "directly on … …," "directly engaged with … …," "directly connected to" or "directly coupled to" another element or layer, there may be no intervening elements or layers present. Other words used to describe the relationship of elements should be interpreted in a similar manner (e.g., "between … …" and "directly between … …", "adjacent" and "directly adjacent", etc.). As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region or section from another element, component, region or section. Unless clearly indicated by the context, use of terms such as the terms "first," "second," and other numerical values herein does not imply a sequence or order. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
Spatially relative terms, such as "inner," "outer," "below," "… …," "lower," "above," "upper," and the like, may be used herein for ease of description to describe a relationship between one element or feature and one or more other elements or features as illustrated in the figures. Spatially relative terms may be intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the example term "below … …" can encompass both an orientation of facing upward and downward. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted.
Claims (10)
1. A transmission driving circuit with temperature control is characterized by comprising an electrical interface unit, a DML driving circuit, an MCU circuit, a TEC driving circuit and a transmission assembly; wherein,
the TEC driving circuit is respectively connected with the MCU circuit and the emission component;
the DML drive circuit is respectively connected with the MCU circuit, the emission component, and circuits among the MCU circuit and the TEC drive circuit;
the electric interface unit is respectively connected with the DML drive circuit, the MCU circuit and circuits between the DML drive circuit and the MCU circuit;
the electrical interface unit is used for receiving an input electrical signal;
the DML drive circuit is used for generating bias current and modulation current under the control of the MCU circuit and sending the bias current and the modulation current to the transmitting component;
the transmitting component is used for receiving the electric signal from the electrical interface unit and converting the electric signal into an optical signal to be output according to the driving of the bias current and the modulation current;
the MCU circuit is used for sampling and monitoring the temperature of the transmitting component in real time;
the TEC driving circuit is used for adjusting the temperature of the emission component under the control of the MCU circuit.
2. The transmission driving circuit with temperature control of claim 1, wherein the TD + pin of the electrical interface unit is connected with the TDIP pin of the DML driving circuit;
the TD-pin of the electrical interface unit is connected with the TDIN pin of the DML driving circuit;
the VCCT pin of the electrical interface unit is respectively connected with the VCC33 pin of the DML driving circuit, the SCL _ M pin of the MCU circuit and the SDA _ M pin of the MCU circuit;
a TX _ DISable pin of the electrical interface unit is respectively connected with a TX _ DIS pin of the MCU circuit and a TXDIS pin of the DML driving circuit;
an SDA pin of the electrical interface unit is connected with an SDA pin of the MCU circuit;
and the SCL pin of the electrical interface unit is connected with the SCL pin of the MCU circuit.
3. The transmission driving circuit with temperature control according to claim 2, wherein the SCL pin of the DML driving circuit is connected to the SCL _ M pin of the MCU circuit;
the SDA pin of the DML driving circuit is connected with the SDA _ M pin of the MCU circuit;
an LI pin of the DML driving circuit is connected with an LO pin of the DML driving circuit through a first inductor;
the PMSVC pin of the DML driving circuit is grounded through a first capacitor;
an SVCC pin of the DML driving circuit is connected between a PMSVCC pin of the DML driving circuit and the first capacitor;
an OUTK pin of the DML driving circuit is connected with an LD-pin of the transmitting component;
the OUTA pin of the DML driving circuit is connected with the LD + pin of the transmitting component;
the VCCTA pin of the DML driving circuit is connected between the OUTA pin of the DML driving circuit and the LD + pin of the transmitting component through an anti-interference device;
the VCCTK pin of the DML driving circuit is connected between the VCCTA pin of the DML driving circuit and the anti-interference device through a second capacitor;
and the MDIN pin of the DML driving circuit is connected with the PD-pin of the emission component.
4. The transmission driving circuit with temperature control of claim 3, wherein the Vref pin of the MCU circuit is connected to the Rth + pin of the transmission component through a first resistor and a second resistor connected in series;
a Temp _ ADC pin of the MCU circuit is connected between the first resistor and the second resistor;
a Temp _ DAC pin of the MCU circuit is connected with a CTL pin of the TEC drive circuit;
an SCL _ M pin of the MCU circuit is connected with an SCL pin of the TEC driving circuit;
and the SDA _ M pin of the MCU circuit is connected with the SDA pin of the TEC driving circuit.
5. The temperature controlled emission drive circuit of claim 4, wherein the VOS pin of the TEC drive circuit is connected to the TEC-pin of the emission assembly;
a VO1 pin of the TEC driving circuit is connected with a TEC + pin of the emission component;
a PGND pin of the TEC driving circuit is grounded;
and the SW pin of the TEC driving circuit is connected between the VOS pin of the TEC driving circuit and the TEC-pin of the emission component through a second inductor.
6. The temperature controlled transmit driver circuit of claim 5, further comprising a third capacitor;
one end of the third capacitor is connected between the second inductor and the VOS pin of the TEC driving circuit, and the other end of the third capacitor is grounded.
7. The temperature controlled transmit driver circuit of claim 5, further comprising a fourth capacitor;
one end of the fourth capacitor is connected between the pin VO1 of the TEC driving circuit and the pin TEC + of the emission component, and the other end of the fourth capacitor is grounded.
8. The temperature controlled emission drive circuit of claim 5, wherein the PD +/Rth-1 pin, GND1 pin, GND2 pin and PD +/Rth-2 pin of the emission component are all grounded;
the PD +/Rth-1 pin, the TEC-pin, the TEC + pin, the GND1 pin, the LD-pin, the LD + pin, the GND2 pin, the PD-pin, the Rth + pin and the PD +/Rth-2 pin are sequentially arranged.
9. The temperature controlled transmit driver circuit of claim 3, wherein the interference rejection device is a ferrite bead.
10. An optical module comprising the emission drive circuit with temperature control according to any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021266809.6U CN212086210U (en) | 2020-07-02 | 2020-07-02 | Take transmission drive circuit and optical module of control by temperature change |
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| CN202021266809.6U CN212086210U (en) | 2020-07-02 | 2020-07-02 | Take transmission drive circuit and optical module of control by temperature change |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113783622A (en) * | 2021-09-10 | 2021-12-10 | 武汉意谷光电科技有限公司 | Optical module with top adjusting function |
| CN114614669A (en) * | 2022-03-18 | 2022-06-10 | 成都亿芯源半导体科技有限公司 | Power supply configuration scheme capable of reducing overall power consumption and cost of driving chip of EML laser |
-
2020
- 2020-07-02 CN CN202021266809.6U patent/CN212086210U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113783622A (en) * | 2021-09-10 | 2021-12-10 | 武汉意谷光电科技有限公司 | Optical module with top adjusting function |
| CN113783622B (en) * | 2021-09-10 | 2023-01-17 | 武汉意谷光电科技有限公司 | Optical module with top adjusting function |
| CN114614669A (en) * | 2022-03-18 | 2022-06-10 | 成都亿芯源半导体科技有限公司 | Power supply configuration scheme capable of reducing overall power consumption and cost of driving chip of EML laser |
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