CN212032893U - Thin film capacitor material structure - Google Patents
Thin film capacitor material structure Download PDFInfo
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- CN212032893U CN212032893U CN202020622316.5U CN202020622316U CN212032893U CN 212032893 U CN212032893 U CN 212032893U CN 202020622316 U CN202020622316 U CN 202020622316U CN 212032893 U CN212032893 U CN 212032893U
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Abstract
The application discloses provide a thin film capacitor material structure, include: the structure comprises a framework reinforcing layer, a first dielectric layer, a second dielectric layer, a first metal film layer and a second metal film layer, wherein the first dielectric layer and the second dielectric layer are respectively attached to two side surfaces of the framework reinforcing layer; the first metal film layer and the second metal film layer are respectively attached to the outer sides of the first dielectric layer and the second dielectric layer; wherein the skeleton reinforcing layer is provided with a plurality of honeycomb holes. The thin film capacitor material structure can enhance the toughness and impact resistance of the dielectric material layer, can perform double-sided etching simultaneously, and greatly reduces the subsequent use and processing flow of the thin film capacitor material; the framework reinforcing layer is provided with a plurality of honeycomb holes, so that the dielectric constant and the capacitance density are improved, and the binding force between the framework reinforcing layer and the dielectric layers on the two sides of the framework reinforcing layer can be enhanced.
Description
Technical Field
The embodiment of the application relates to the technical field of materials, in particular to a thin film capacitor material structure.
Background
In the prior art, when a flexible thin film capacitor material is produced, only a high dielectric material is coated on the surface of a metal base material, and then a layer of metal base material is compounded, wherein the metal base material is in a sandwich structure, and the middle layer of high dielectric material is thin and poor in toughness, so that the toughness and impact resistance are poor.
SUMMERY OF THE UTILITY MODEL
Aspects of the present application provide a thin film capacitor material structure that can be etched on both sides and that can increase the bonding force between the reinforcement layer and the dielectric layers on both sides of the reinforcement layer.
An aspect of the present application provides a thin film capacitor material structure, including: a framework reinforcing layer, a first dielectric layer, a second dielectric layer, a first metal film layer and a second metal film layer, wherein,
the first dielectric layer and the second dielectric layer are respectively attached to two side surfaces of the framework reinforcing layer;
the first metal film layer and the second metal film layer are respectively attached to the outer sides of the first dielectric layer and the second dielectric layer;
wherein the skeleton reinforcing layer is provided with a plurality of honeycomb holes.
Optionally, the honeycomb holes of the framework reinforcing layer are honeycomb holes penetrating through the framework reinforcing layer; or, honeycomb holes of the framework reinforcing layer are concave holes which do not penetrate through the framework reinforcing layer and are distributed on two surfaces of the framework reinforcing layer respectively.
Optionally, the honeycomb holes of the framework reinforcing layer are round holes, elliptical holes, polygonal holes or irregular holes.
Optionally, the polygonal apertures are quadrilateral apertures, pentagonal apertures, hexagonal apertures, heptagonal apertures, or octagonal apertures.
Optionally, the diameter of the inscribed circle of the polygonal hole is 1-100 mm.
Optionally, the distance between the centers of the inscribed circles of two adjacent honeycomb holes is larger than the sum of the radii of the two adjacent inscribed circles.
Optionally, the first and second dielectric layers are respectively coated on the surfaces of the first and second metal thin film layers facing the skeleton reinforcing layer.
Optionally, the skeleton reinforcing layer is a composite film composed of any one or at least two of the following components: a polyimide film, a polyethylene terephthalate film, a polycarbonate film, a polymethyl methacrylate film, a polypropylene film, a polystyrene film, a polyvinyl chloride film, a biaxially oriented polypropylene film, a copper oxide film, an aluminum film, or an aluminum oxide film.
Optionally, the first and second metal thin film layers are made of copper, copper oxide, aluminum or aluminum oxide.
Optionally, the material of the skeleton reinforcing layer is resistant to temperatures above 60 ℃.
In the thin film capacitor material structure, the dielectric layers are arranged on the two sides of the reinforced framework reinforcing layer, and the framework reinforcing layer is provided with a plurality of honeycomb holes, so that the double-sided etching can be realized, and the binding force between the framework reinforcing layer and the dielectric layers on the two sides can be realized.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic layer structure diagram of a thin film capacitor material structure according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of the thin film capacitor material of FIG. 1 with a reinforcing layer having round honeycomb holes;
FIG. 3 is a schematic diagram of the structure of the thin film capacitor material of FIG. 1 in which honeycomb holes of the reinforcing layer are quadrilateral holes;
FIG. 4 is a schematic structural diagram of a framework reinforcement layer of the thin film capacitor material structure of FIG. 1, in which honeycomb holes are pentagonal;
FIG. 5 is a schematic structural diagram of a framework reinforcement layer of the thin film capacitor material structure of FIG. 1, in which honeycomb holes are hexagonal holes;
fig. 6 is a schematic flow chart illustrating a method for processing a thin film capacitor material structure according to another embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The term "and/or" herein is merely an association describing an associated object, meaning that three relationships may exist, e.g., a and/or B, may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
Fig. 1 is a schematic layer structure diagram of a thin film capacitor material structure according to an embodiment of the present disclosure, where the thin film capacitor material structure includes: the framework reinforcing layer 11, the first dielectric layer 12, the second dielectric layer 13, the first metal thin film layer 14 and the second metal thin film layer 15, wherein, the framework reinforcing layer 11 is attached to the first dielectric layer 12 with between the second dielectric layer 13, the first metal thin film layer 14 with the second metal thin film layer 15 is attached to the first dielectric layer 12 with the outside of the second dielectric layer 13 respectively.
In another embodiment of the present application, the skeleton reinforcing layer 11 has a plurality of honeycomb holes, for example, the skeleton reinforcing layer 11 is a circular plate or a square plate with a certain thickness, and a plurality of non-through or through honeycomb holes are pressed out by a molding press, and if the non-through honeycomb holes are distributed on two surfaces of the skeleton reinforcing layer 11, they may also be called as concave holes.
In another embodiment of the present application, the honeycomb holes may be round holes, elliptical holes, polygonal holes or irregular holes, wherein the polygonal holes are quadrangular holes, pentagonal holes, hexagonal holes, heptagonal holes or octagonal holes. For example, the honeycomb holes of the framework reinforcing layer 11 may have shapes as shown in fig. 2 to 5, which are structural schematic diagrams of the honeycomb holes of the framework reinforcing layer 11 being circular holes, quadrilateral holes, pentagonal holes and hexagonal holes, respectively, wherein the quadrilateral holes may be square or rectangular holes, and the other polygonal holes are equilateral polygonal holes.
In another embodiment of the present application, each of the honeycomb holes has the same or different size, for example, each of the honeycomb holes has an inscribed circle diameter of 1 to 100 millimeters (mm). Alternatively, for simplicity of manufacture, each honeycomb cell is the same size, e.g., each honeycomb cell has an inscribed circle diameter of 1 mm. In addition, the connecting portions with a certain distance between the boundaries of two adjacent honeycomb holes or the two adjacent honeycomb holes separated by a certain width are adjacent, that is, the boundaries of two adjacent honeycomb holes do not overlap with each other or the two adjacent honeycomb holes do not communicate with each other, for example, the distance between the centers of inscribed circles of two adjacent honeycomb holes is greater than the sum of the radii of the two adjacent inscribed circles, for example, the distance between the centers of inscribed circles of two adjacent honeycomb holes is greater than or equal to twice the sum of the radii of the two adjacent inscribed circles, for example, the diameters of the inscribed circles of two adjacent honeycomb holes are both 1mm, and the distance between the centers of inscribed circles of two adjacent honeycomb holes is greater than or equal to 2 mm.
In another embodiment of the present application, the thickness of the carcass reinforcing layer 11 is 10-15 micrometers (um), and optionally, the thickness of the carcass reinforcing layer 11 is 12 um.
In another embodiment of the present application, the skeleton reinforcing layer 11 is a composite film composed of any one or at least two of the following: polyimide (PI) films, Polyethylene terephthalate (PET) films, Polycarbonate (PC) films, polymethyl methacrylate (PMMA) films, polypropylene (PP) films, Polystyrene (PS) films, Polyvinyl chloride (PVC) films, Biaxially oriented polypropylene (BOPP) films, copper oxide films, aluminum films, or aluminum oxide films.
Optionally, the temperature resistance of the framework reinforcing layer 11 is above 60 ℃, and optionally, 60 ℃ to 80 ℃.
The first dielectric layer 12 and the second dielectric layer 13 are respectively coated on the surfaces of the first metal thin film layer 14 and the second metal thin film layer 15 facing the framework reinforcing layer 11, for example, a dielectric composite material is respectively coated on one surface of each of the first metal thin film layer 14 and the second metal thin film layer 15 by using a coater, so as to respectively obtain the first dielectric layer 12 and the second dielectric layer 13. Then, the framework reinforcing layer 11 is placed between the first dielectric layer 12 and the second dielectric layer 13 respectively arranged on the first metal thin film layer 14 and the second metal thin film layer 15 to obtain a five-layer structure, and the five-layer structure is pressed by a hot press to obtain a film capacitor material structure, for example, a flexible film capacitor material capable of being etched on both sides simultaneously is obtained after pressing.
Since the skeleton-reinforcing layer 11 is provided with a plurality of honeycomb holes, not only the dielectric constant and the capacitance density can be improved, but also the bonding force between the skeleton-reinforcing layer 11 and the first dielectric layer 12 and the second dielectric layer 13 can be enhanced, for example, when the skeleton-reinforcing layer is pressed, part of the material of the first dielectric layer 12 and the second dielectric layer 13 can penetrate into the honeycomb holes to form a snap structure.
In another embodiment of the present application, the resistivity of the first dielectric layer 12 and the second dielectric layer 13 is 104～1018Ohm-meter (Ω · m), optionally, the resistivities of the first dielectric layer 12 and the second dielectric layer 13 may be the same or different, optionally, the resistivities of the first dielectric layer 12 and the second dielectric layer 13 are both 108Omega.m. In another embodiment of the present application, the first dielectric layer 12 and the second dielectric layer 13 are a composite of glass and plastic.
In another embodiment of the present application, the thicknesses of the first dielectric layer 12 and the second dielectric layer 13 are 1 micrometer (um) to 30 micrometers (um), optionally, the thicknesses of the first dielectric layer 12 and the second dielectric layer 13 may be the same or different from each other, optionally, the thicknesses of the first dielectric layer 12 and the second dielectric layer 13 are both 15 micrometers (um).
In another embodiment of the present application, the first metal thin film layer 14 and the second metal thin film layer 15 are made of copper, copper oxide, aluminum or aluminum oxide.
In the thin film capacitor material structure described in the above embodiment, since the innermost layer is the skeleton reinforcing layer, the toughness and impact resistance of the dielectric material layer can be well enhanced; and the double-layer dielectric material layer is arranged, so that the thin film capacitor material can be subjected to double-sided etching simultaneously, and the subsequent use and processing flow of the thin film capacitor material is greatly reduced; the framework reinforcing layer is provided with a plurality of honeycomb holes, so that the dielectric constant and the capacitance density are improved, and the binding force between the framework reinforcing layer and the dielectric layers on the two sides of the framework reinforcing layer can be enhanced.
Another embodiment of the present application further provides a method for processing a thin film capacitor material, as shown in fig. 6, which is a schematic flow chart of the method for processing a thin film capacitor material according to another embodiment of the present application.
The carcass reinforcing layer is pressed out of a plurality of honeycomb holes by, for example, a die press.
The skeleton enhancement layer is square board or circular board that thickness is 10-15 microns (um), and optionally, the thickness of skeleton enhancement layer is 12 um.
In another embodiment of the present application, the carcass reinforcement layer is a composite film composed of any one or at least two of the following: a PI film, a PET film, a PC film, a PMMA film, a PP film, a PS film, a PVC film, BOPP, a copper film, a copper oxide film, an aluminum film, or an aluminum oxide film.
Optionally, the temperature resistance of the framework reinforcing layer is above 60 ℃, and optionally, 60-80 ℃.
In another embodiment of the present application, a plurality of blind or through honeycomb holes, which are distributed on both surfaces of the skeleton reinforcing layer if the blind honeycomb holes are formed, may also be referred to as concave holes, are pressed through a molding press.
In another embodiment of the present application, the honeycomb holes may be circular holes, elliptical holes, polygonal holes or irregular holes, wherein the polygonal holes are quadrilateral holes, pentagonal holes, hexagonal holes, heptagonal holes or octagonal holes, for example, the honeycomb holes of the framework reinforcing layer 11 may have the shape as shown in fig. 2 to 5. In another embodiment of the present application, the quadrilateral holes may be square or rectangular holes, and the other polygonal holes are equilateral polygonal holes.
In another embodiment of the present application, each of the honeycomb holes has the same size, for example, the diameter of the inscribed circle of each of the honeycomb holes is 1 to 100 millimeters (mm), and optionally, the diameter of the inscribed circle of each of the honeycomb holes is 1 mm. In addition, the distance between the centers of the inscribed circles of two adjacent honeycomb holes is greater than the sum of the radii of the two adjacent inscribed circles, for example, the distance between the centers of the inscribed circles of two adjacent honeycomb holes is greater than or equal to twice the sum of the radii of the two adjacent inscribed circles, for example, if the diameters of the inscribed circles of two adjacent honeycomb holes are both 1mm, the distance between the centers of the inscribed circles of two adjacent honeycomb holes is greater than or equal to 2 mm.
For example, a dielectric composite material is coated on one surface of each of the first metal thin film layer and the second metal thin film layer using a coater, resulting in the first dielectric layer and the second dielectric layer, respectively.
In another embodiment of the present application, the first and second dielectric layers have a resistivity of 104～1018Ω · m, optionally the resistivities of the first and second dielectric layers may be the same or different, optionally the resistivities of the first and second dielectric layers are both 108Omega.m. In another embodiment of the present application, theThe first dielectric layer and the second dielectric layer are a composite of glass and plastic.
In another embodiment of the present application, the thicknesses of the first dielectric layer and the second dielectric layer are 1 micrometer (um) to 30 micrometers (um), optionally, the thicknesses of the first dielectric layer and the second dielectric layer may be the same or different from each other, optionally, the thicknesses of the first dielectric layer and the second dielectric layer are both 15 micrometers (um).
In another embodiment of the present application, the first metal thin film layer and the second metal thin film layer are made of copper, copper oxide, aluminum or aluminum oxide.
And 63, placing the framework reinforcing layer between the first dielectric layer and the second dielectric layer which are respectively arranged on the first metal thin film layer and the second metal thin film layer to obtain a five-layer structure.
And step 64, laminating the five-layer structure to obtain the thin film capacitor material.
For example, the five-layer structure is pressed by a hot press, and the flexible thin film capacitor material with two sides etched simultaneously is obtained after pressing.
The film capacitor material obtained by the processing method described in the above embodiment can well enhance the toughness and impact resistance of the dielectric material layer because the innermost layer is the framework reinforcing layer; and the double-layer dielectric material layer is arranged, so that the thin film capacitor material can be subjected to double-sided etching simultaneously, and the subsequent use and processing flow of the thin film capacitor material is greatly reduced; the framework reinforcing layer is provided with a plurality of honeycomb holes, so that the dielectric constant and the capacitance density are improved, and the binding force between the framework reinforcing layer and the dielectric layers on the two sides of the framework reinforcing layer can be enhanced.
The above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.
Claims (10)
1. A thin film capacitor material structure, comprising: a framework reinforcing layer, a first dielectric layer, a second dielectric layer, a first metal film layer and a second metal film layer, wherein,
the first dielectric layer and the second dielectric layer are respectively attached to two side surfaces of the framework reinforcing layer;
the first metal film layer and the second metal film layer are respectively attached to the outer sides of the first dielectric layer and the second dielectric layer;
wherein the skeleton reinforcing layer is provided with a plurality of honeycomb holes.
2. The thin film capacitor material structure as claimed in claim 1, wherein the honeycomb holes of the skeletal reinforcement layer are honeycomb holes penetrating the skeletal reinforcement layer; or, honeycomb holes of the framework reinforcing layer are concave holes which do not penetrate through the framework reinforcing layer and are distributed on two surfaces of the framework reinforcing layer respectively.
3. The thin film capacitor material structure as claimed in claim 1, wherein the honeycomb holes of the skeleton reinforcing layer are circular holes, elliptical holes or polygonal holes.
4. The thin film capacitive material structure of claim 3, wherein the polygonal hole is a quadrilateral hole, a pentagonal hole, a hexagonal hole, a heptagonal hole, or an octagonal hole.
5. The thin film capacitor material structure as claimed in claim 3 or 4, wherein the polygonal hole has an inscribed circle diameter of 1-100 mm.
6. A thin film capacitor material structure as claimed in claim 3 or 4, wherein the distance between the centers of the inscribed circles of two adjacent honeycomb holes is larger than the sum of the radii of the two inscribed circles.
7. The thin film capacitor material structure as claimed in claim 1, wherein the first and second dielectric layers are respectively coated on the surfaces of the first and second metal thin film layers facing the reinforcement layer.
8. The thin film capacitor material structure as claimed in claim 1, wherein the skeleton reinforcing layer is a composite thin film composed of at least two of the following materials: a polyimide film, a polyethylene terephthalate film, a polycarbonate film, a polymethyl methacrylate film, a polypropylene film, a polystyrene film, a polyvinyl chloride film, a biaxially oriented polypropylene film, a copper oxide film, an aluminum film, or an aluminum oxide film.
9. The thin film capacitor material structure as claimed in claim 1, wherein the first and second metal thin film layers are made of copper, copper oxide, aluminum or aluminum oxide.
10. The film capacitor material structure of claim 1, wherein the skeletal reinforcement layer material is resistant to temperatures above 60 ℃.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2019221651161 | 2019-11-28 | ||
| CN201922165116 | 2019-11-28 |
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| CN212032893U true CN212032893U (en) | 2020-11-27 |
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| CN202020622316.5U Active CN212032893U (en) | 2019-11-28 | 2020-04-14 | Thin film capacitor material structure |
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Effective date of registration: 20210126 Address after: 518009 b3404, Danfeng Bailuyuan, 1001 Shennan East Road, Luohu District, Shenzhen City, Guangdong Province Patentee after: Liu Xiaojuan Address before: 518128 218, building 25B, Zhongwu Industrial Zone, Zhongwu community, Hangcheng street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Heguang New Material Technology Co.,Ltd. |