CN211955566U - Vacuum high-low temperature test probe station for semiconductor device - Google Patents
Vacuum high-low temperature test probe station for semiconductor device Download PDFInfo
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- CN211955566U CN211955566U CN202020108145.4U CN202020108145U CN211955566U CN 211955566 U CN211955566 U CN 211955566U CN 202020108145 U CN202020108145 U CN 202020108145U CN 211955566 U CN211955566 U CN 211955566U
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Abstract
The utility model discloses the semiconductor test technical field especially relates to a vacuum high low temperature test probe station for semiconductor device, including vacuum cavity, three-dimensional moving mechanism, electricity test mechanism, optics test mechanism and optics observation mechanism, vacuum cavity sets up telecommunications interface, cold source interface, bleed interface and three-dimensional moving mechanism interface to set up the objective table in the vacuum cavity, the objective table sets up the cold source circulation pipeline, the cold source device outside the vacuum cavity is connected with the cold source circulation pipeline through the circulating line, and the objective table bottom sets up the heater block, the vacuum cavity can also guarantee the vacuum degree of vacuum cavity when introducing photoelectric signal in the vacuum cavity through vacuum joint; the refrigerant directly circulates through the objective table, can realize rapid cooling, and the while cooperation heater block is gone on in turn through heating and cooling, reaches the test temperature of semiconductor fast, reduces test time greatly, promotes semiconductor device's efficiency of software testing.
Description
Technical Field
The utility model belongs to the technical field of the semiconductor test, especially, relate to a high low temperature test probe station in vacuum for semiconductor device.
Background
With the rapid development of the semiconductor industry, the requirements for the research of semiconductor devices are higher and higher, and especially, the test conditions in different environments such as a vacuum environment, a high temperature environment, an extremely low temperature environment and the like are more and more. Some manufacturers of the tests finish the tests by purchasing imported equipment, but the tests are expensive, and some manufacturers finish the tests by equipment developed by the manufacturers, but the tests have single function and poor performance, and the research and development efficiency of the domestic semiconductor devices is seriously influenced.
SUMMERY OF THE UTILITY MODEL
To the technical problem, the utility model provides a high low temperature test probe station in vacuum for semiconductor device can carry out high temperature test or low temperature test to semiconductor device under vacuum environment to derive the electrical parameter of test.
The utility model provides a vacuum high low temperature test probe station for semiconductor device, includes vacuum cavity, three-dimensional moving mechanism, electricity accredited testing organization, optics accredited testing organization and optics observation mechanism, three-dimensional moving mechanism meets with vacuum cavity, electricity accredited testing organization, optics accredited testing organization and optics observation mechanism all install on three-dimensional moving mechanism and arrange vacuum cavity in, set up the objective table in the vacuum cavity, the objective table sets up cold source circulation pipeline and heater block.
As the utility model relates to a further improvement of a high low temperature test probe platform in vacuum for semiconductor device, the vacuum cavity sets up the apron, and the apron middle part sets up transparent observation window.
As a further improvement of the vacuum high and low temperature test probe station for the semiconductor device, the vacuum cavity is provided with an air exhaust interface, and the air exhaust interface is connected with an air exhaust device outside the vacuum cavity.
As the utility model relates to a vacuum high low temperature test probe station's for semiconductor device further improvement, the vacuum cavity sets up three-dimensional moving mechanism interface, and three-dimensional moving mechanism includes that the three-dimensional seat that removes and installs the three-dimensional carriage release lever on the three-dimensional seat that removes, the three-dimensional carriage release lever wears to establish bellows, three-dimensional moving mechanism interface in proper order and arranges in the vacuum cavity, and the both ends of bellows remove a sealing connection with three-dimensional moving mechanism interface and three-dimensional respectively.
As the utility model relates to a vacuum high low temperature test probe platform's for semiconductor device further improvement, the vacuum cavity sets up the telecommunications interface, and electricity accredited testing organization includes probe fixture and installs the probe on probe fixture, probe fixture rigid coupling is in the tip of three-dimensional carriage release lever to probe fixture pass through vacuum joint install in the telecommunications interface is in vitro with the telecommunications parameter drawing-out vacuum cavity.
As a further improvement of the vacuum high and low temperature test probe station for semiconductor devices, the optical test mechanism includes a light source fixedly connected to the end of the three-dimensional moving rod.
As the utility model relates to a further improvement of high low temperature test probe platform in vacuum for semiconductor device, optics observation mechanism is still including adjusting the pole and installing the focusing frame on adjusting the pole, the microscope is installed on the focusing frame and is arranged observation window's top in.
As the utility model relates to a further improvement of a high low temperature test probe platform in vacuum for semiconductor device, the cold source runner pipe that the objective table set up connects mutually through circulating line and the outer cold source device of cavity.
As a further improvement of the vacuum high and low temperature test probe station for semiconductor devices, the vacuum cavity is further provided with a needle valve for controlling the flow of the refrigerant in the circulation pipeline.
As the utility model relates to a further improvement of a high low temperature test probe platform in vacuum for semiconductor device, the objective table still sets up temperature sensor, and the heater block that temperature sensor and objective table bottom surface set up meets with the outer temperature control device of vacuum cavity.
The utility model discloses a beneficial effect that is used for high low temperature test probe platform in vacuum of semiconductor device: the vacuum cavity can ensure the vacuum degree of the vacuum cavity while introducing photoelectric signals into the vacuum cavity through the vacuum joint; the refrigerant directly circulates through the objective table, can realize rapid cooling, and the while cooperation heater block is gone on in turn through heating and cooling, reaches the test temperature of semiconductor fast, reduces test time greatly.
Drawings
Fig. 1 is a side view of the present invention;
fig. 2 is a top view of the present invention;
fig. 3 is a top view of the vacuum chamber of the present invention;
fig. 4 is a schematic structural view of the vacuum chamber of the present invention;
fig. 5 is a schematic structural view of the three-dimensional moving mechanism and the electrical side-viewing mechanism of the present invention;
fig. 6 is a schematic structural view of the optical observation mechanism of the present invention;
fig. 7 is a schematic structural view of the objective table of the present invention;
in the figure: 1. vacuum chamber, 101, telecommunication interface, 102, cold source interface, 103, air exhaust interface, 104, three-dimensional moving mechanism interface, 105, cover plate, 106, observation window, 107, needle valve, 2, three-dimensional moving mechanism, 201, three-dimensional moving seat, 202, three-dimensional moving rod, 203, bellows, 3, electrical testing mechanism, 301, probe clamp, 302, probe, 4, optical testing mechanism, 5, optical observing mechanism, 501, adjusting rod, 502, focusing frame, 503, microscope, 6, objective table, 601, cold source inlet interface, 602, cold source outlet interface, 603, heating component, 604, support column, 7, cold source device, 8, air exhaust device, 9, temperature control device.
Detailed Description
The present invention will be further described with reference to the following examples, which are only part of the present invention, and these examples are only used to explain the present invention, and do not constitute any limitation to the scope of the present invention.
As shown in the attached drawings of the specification, a vacuum high and low temperature test probe station for a semiconductor device comprises a vacuum cavity 1, a three-dimensional moving mechanism 2, an electrical test mechanism 3, an optical test mechanism 4 and an optical observation mechanism 5, wherein a telecommunication interface 101, a cold source interface 102, an air exhaust interface 103 and a three-dimensional moving mechanism interface 104 are reserved in the vacuum cavity 1, the air exhaust interface 103 is connected with an air exhaust device 8 outside the vacuum cavity 1, so that the vacuum cavity 1 forms a vacuum environment to prevent the semiconductor device to be tested from frosting at a low temperature or oxidizing at a high temperature, an object stage 6 is installed in the vacuum cavity 1 to place the semiconductor device to be tested, a cover plate 105 is further arranged in the vacuum cavity 1 to facilitate taking and placing of the semiconductor device to be tested, and the cover plate 105 is provided with a transparent observation window 106 to facilitate observation of the.
The objective table 6 is installed on the inner bottom surface of the vacuum cavity 1 through a support pillar 604, the objective table 6 is provided with a cold source circulation pipeline, the cold source device 7 outside the vacuum cavity 1 is connected with the cold source circulation pipeline through a circulation pipeline, wherein the circulation pipeline penetrates through the cold source interface 102 and is hermetically connected with the cold source interface 102, specifically, the cold source circulation pipeline of the objective table 6 comprises a cold source inlet interface 601 and a cold source outlet interface 602, the vacuum cavity 1 is provided with two cold source interfaces 102, the circulation pipeline comprises two sections, two ends of one section are respectively connected with the cold source outlet of the cold source device 7 and the cold source inlet interface 601 of the objective table 6, and two ends of the other section are respectively connected with the cold source inlet of the cold source device 7 and the cold source outlet interface 602 of the objective; and the bottom surface of the object stage 6 is provided with a heating component 603, a temperature sensor for monitoring the temperature of the object stage is mounted on the object stage 6, the temperature sensor transmits the sensing parameter to a temperature control device 9 outside the vacuum cavity, and the heating component 603 is controlled by the temperature control device 9.
Cold source agent flows out from cold source device 7 and flows into objective table 6 from vacuum cavity 1 through circulating line from outside, make objective table 6 cooling, then flow out vacuum cavity 1 again, thereby build the low temperature environment who is surveyed semiconductor device, and under needs high temperature or homothermal condition, heat through 8 control heating parts 603 of temperature control device, make objective table 6 reach target temperature, so under the combined action of circulation cold source agent and heating parts 603, can let objective table 6 reach the target temperature who is surveyed semiconductor device fast, and the test efficiency is promoted.
Although the cold source device 7 is provided with a valve, the caliber of the valve is large, and the flow of the cold source agent cannot be precisely controlled, the vacuum cavity 1 is provided with a needle valve 107 for controlling the flow of the cold source agent in the circulating pipeline, and the caliber of the needle valve 107 is small, so that the flow of the refrigerant can be more accurately controlled, the consumption of the refrigerant is reduced, and the test cost is reduced.
The three-dimensional moving mechanism 2 comprises a three-dimensional moving seat 201 and a three-dimensional moving rod 202 installed on the three-dimensional moving seat 201, the three-dimensional moving rod 202 sequentially penetrates through a corrugated pipe 203 and a three-dimensional moving mechanism interface 104 and is arranged in the vacuum cavity 1, and two ends of the corrugated pipe 203 are respectively in sealing connection with the three-dimensional moving mechanism interface 104 and the three-dimensional moving seat 201, so that the three-dimensional moving rod 202 and the vacuum cavity can be integrated, and a foundation is provided for installing an electrical testing mechanism, an optical testing mechanism and an optical observing mechanism. The electrical testing mechanism 3 is mounted on the three-dimensional moving rod 202 of the three-dimensional moving mechanism 2, the electrical testing mechanism 3 comprises a probe clamp 301 and a probe 302 mounted on the probe clamp 301, the probe 302 is used for contacting a semiconductor device to be tested on the object stage 6, the probe clamp 301 is fixedly connected to the end part of the three-dimensional moving rod 202, the elastic probe clamp 301 is mounted at the telecommunication interface 101 through a vacuum joint, and telecommunication parameters are led out of the vacuum cavity 1 for testing; similarly, the optical testing mechanism 4 is arranged in the vacuum cavity 1, fixed on the three-dimensional moving mechanism 2, introduces a light source signal into the vacuum cavity 1, and irradiates a light source on the tested semiconductor device by adjusting the position of the three-dimensional moving rod 202; the optical observation mechanism 5 includes an adjusting rod 501, a focusing frame 502 and a microscope 503, the focusing frame 502 is mounted on the adjusting rod 501, the microscope 503 is mounted on the focusing frame 502, and the microscope 503 is positioned above the observation window by adjusting the adjusting rod 501, so as to observe the state of the semiconductor device to be observed in the vacuum chamber 1.
Preferably, the reserved interfaces of the vacuum chamber are connected by vacuum joints such as KF, CF and the like, so that the positions of the light source and the probe 302 in the vacuum chamber 1 can be adjusted by the three-dimensional moving mechanism 2, the vacuum degree of the vacuum chamber 1 is not influenced, and the semiconductor device can be better tested.
The above description is only a preferred embodiment of the present invention, and the present invention is not limited to the above embodiments, and although the present invention has been disclosed with the preferred embodiments, it is not limited to the present invention, and any skilled person in the art can make some modifications or equivalent embodiments with equivalent changes by utilizing the above disclosed technical contents without departing from the technical scope of the present invention, but all the technical matters of the present invention do not depart from the technical scope of the present invention.
Claims (10)
1. A vacuum high and low temperature test probe station for semiconductor devices, characterized in that: the three-dimensional moving mechanism is connected with the vacuum cavity, the electrical testing mechanism, the optical testing mechanism and the optical observing mechanism are all installed on the three-dimensional moving mechanism and are arranged in the vacuum cavity, an objective table is arranged in the vacuum cavity, and the objective table is provided with a cold source circulation pipeline and a heating part.
2. The vacuum high and low temperature test probe station for semiconductor devices of claim 1, wherein: the vacuum cavity is provided with a cover plate, and the middle part of the cover plate is provided with a transparent observation window.
3. The vacuum high and low temperature test probe station for semiconductor devices of claim 2, wherein: the vacuum cavity is provided with an air exhaust interface, and the air exhaust interface is connected with an air exhaust device outside the vacuum cavity.
4. The vacuum high and low temperature test probe station for semiconductor devices as claimed in claim 3, wherein: the vacuum cavity is provided with a three-dimensional moving mechanism interface, the three-dimensional moving mechanism comprises a three-dimensional moving seat and a three-dimensional moving rod arranged on the three-dimensional moving seat, the three-dimensional moving rod sequentially penetrates through a corrugated pipe and the three-dimensional moving mechanism interface and is arranged in the vacuum cavity, and two ends of the corrugated pipe are respectively connected with the three-dimensional moving mechanism interface and the three-dimensional moving seat in a sealing mode.
5. The vacuum high and low temperature test probe station for semiconductor devices as claimed in claim 4, wherein: the vacuum cavity is provided with a telecommunication interface, the electrical testing mechanism comprises a probe clamp and a probe installed on the probe clamp, the probe clamp is fixedly connected to the end part of the three-dimensional moving rod, and the probe clamp is installed at the telecommunication interface through the vacuum connector to lead telecommunication parameters out of the vacuum cavity.
6. The vacuum high and low temperature test probe station for semiconductor devices as claimed in claim 4, wherein: the optical testing mechanism comprises a light source fixedly connected to the end part of the three-dimensional moving rod.
7. The vacuum high and low temperature test probe station for semiconductor devices as claimed in claim 4, wherein: the optical observation mechanism further comprises an adjusting rod and a focusing frame arranged on the adjusting rod, wherein the focusing frame is provided with a microscope, and the microscope is arranged above the observation window.
8. The vacuum high and low temperature test probe station for semiconductor devices as claimed in claim 4, wherein: and a cold source circulation pipeline arranged on the objective table is connected with a cold source device outside the cavity body through a circulation pipeline.
9. The vacuum high low temperature test probe station for semiconductor devices of claim 8, wherein: the vacuum cavity is also provided with a needle valve for controlling the flow of the refrigerant in the circulating pipeline.
10. The vacuum high low temperature test probe station for semiconductor devices of claim 8, wherein: the objective table is also provided with a temperature sensor, and the temperature sensor and a heating part arranged on the bottom surface of the objective table are connected with a temperature control device outside the vacuum cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020108145.4U CN211955566U (en) | 2020-01-17 | 2020-01-17 | Vacuum high-low temperature test probe station for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020108145.4U CN211955566U (en) | 2020-01-17 | 2020-01-17 | Vacuum high-low temperature test probe station for semiconductor device |
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| CN211955566U true CN211955566U (en) | 2020-11-17 |
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| CN202020108145.4U Active CN211955566U (en) | 2020-01-17 | 2020-01-17 | Vacuum high-low temperature test probe station for semiconductor device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113660823A (en) * | 2021-06-28 | 2021-11-16 | 成都云绎智创科技有限公司 | Visual system, device and method suitable for high and low temperatures |
| CN116165472A (en) * | 2023-04-22 | 2023-05-26 | 深圳市森美协尔科技有限公司 | Low-temperature probe test equipment |
| CN117192324A (en) * | 2023-11-07 | 2023-12-08 | 深圳市森美协尔科技有限公司 | Probe detection table |
-
2020
- 2020-01-17 CN CN202020108145.4U patent/CN211955566U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113660823A (en) * | 2021-06-28 | 2021-11-16 | 成都云绎智创科技有限公司 | Visual system, device and method suitable for high and low temperatures |
| CN116165472A (en) * | 2023-04-22 | 2023-05-26 | 深圳市森美协尔科技有限公司 | Low-temperature probe test equipment |
| CN116165472B (en) * | 2023-04-22 | 2023-07-04 | 深圳市森美协尔科技有限公司 | Low-temperature probe test equipment |
| CN117192324A (en) * | 2023-11-07 | 2023-12-08 | 深圳市森美协尔科技有限公司 | Probe detection table |
| CN117192324B (en) * | 2023-11-07 | 2024-02-06 | 深圳市森美协尔科技有限公司 | Probe detection table |
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