CN211908754U - Miniaturized lattice type crystal filter - Google Patents
Miniaturized lattice type crystal filter Download PDFInfo
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- CN211908754U CN211908754U CN202020507062.2U CN202020507062U CN211908754U CN 211908754 U CN211908754 U CN 211908754U CN 202020507062 U CN202020507062 U CN 202020507062U CN 211908754 U CN211908754 U CN 211908754U
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Abstract
The utility model relates to a crystal filtering technology field, concretely relates to miniaturized lattice type crystal filter, include: the crystal resonator comprises a first integrated lattice type crystal resonator, a second integrated lattice type crystal resonator, at least two variators and at least three capacitors, and is characterized in that the first integrated lattice type crystal resonator is provided with at least one high-frequency crystal resonator, the high-frequency crystal resonators on the first integrated lattice type crystal resonator are connected in a film coating mode, the second integrated lattice type crystal resonator is provided with at least one low-frequency crystal resonator, and the low-frequency crystal resonators on the second integrated lattice type crystal resonator are connected in a film coating mode. The miniaturized lattice type crystal filter of this patent has reduced the volume, and reduce cost has reduced the circuit complexity, has improved the uniformity of components and parts, is fit for batch production.
Description
Technical Field
The patent relates to the technical field of crystal filtering, in particular to a miniaturized lattice type crystal filter.
Background
The crystal filter is an important element in electronic equipment and is used for selecting useful signals in a pass band and filtering useless signals outside the pass band, including interference, mixed combination stray components and the like, so that the selectivity and the anti-interference capability of the equipment are improved. The crystal filters are classified by circuit design into a monolithic crystal filter and a discrete crystal filter, and the discrete crystal filter is further classified into a lattice crystal filter, a ladder crystal filter, and the like. The lattice crystal filter replaces the crystal in the circuit with a variable transformer, and only half the number of crystal resonators is required compared with a ladder crystal filter.
Currently, a single-section crystal filter circuit of a lattice crystal filter includes two crystal resonators and a transformer. The transformer is essentially two inductors which adopt double wires and are wound in parallel on a magnetic core; a crystal resonator comprises a wafer, a pair of electrodes arranged on the upper surface and the lower surface of the wafer in a facing mode, an electrode leading-out end and a crystal resonator shell, wherein the crystal resonator is generally designed into two crystal resonators with the same electrical performance parameters and external dimensions according to frequency and bandwidth requirements, and the two crystal resonators are mainly different in that one resonance frequency is high and the other resonance frequency is low. As shown in fig. 2-3, currently, each crystal resonator is manufactured by manufacturing a pair of electrodes opposite in position at the center of the upper and lower surfaces of a wafer, then leading out the electrodes to the edge of the wafer through electrode tracks, then leading out the electrical properties of the edges of the electrode tracks and the leading-out ends of the supports through bonding conductive adhesives by a special crystal resonator support, then matching a shell on the support, and realizing the complete sealing of elements by adopting a packaging process of resistance welding to manufacture an independent crystal resonator. In practical applications, in order to improve the stop-band rejection and the rectangular coefficient of the lattice-type crystal filter, it is generally implemented by cascading a plurality of single-section filter circuits, for example, two sections of crystal filter circuits include four crystal resonators and two transformers, and among the four crystal resonators, there are two high-frequency crystal resonators with identical performance and two low-frequency crystal resonators with identical performance.
The invention patent "CN 103560766A-crystal filter" discloses a crystal filter, which comprises a differential bridge circuit and a circuit substrate, wherein the differential bridge circuit is arranged on the circuit substrate, the differential bridge circuit comprises a plurality of crystal resonators, a high-frequency coupling line is welded on each of non-common-end pin pads of one or more of the crystal resonators, and the other end of the high-frequency coupling line is fixedly connected to the circuit substrate and insulated from the circuit substrate. The differential bridge type circuit comprises first to fourth crystal resonators, first and second transformers, third to fourth capacitors and an inductor, wherein two ends of a primary coil of the first transformer are used as input ends of a crystal filter, two ends of a secondary coil of the second transformer are respectively connected with first ends of the first and third crystal resonators, the middle end of the secondary coil of the first transformer is grounded, the second end of the first crystal resonator is directly connected with the second end of the third crystal resonator, the second end of the first crystal resonator is also directly connected with the first end of the secondary coil of the second transformer after passing through the second crystal resonator, the second end of the third crystal resonator is also directly connected with the second end of the secondary coil of the second transformer after passing through the fourth crystal resonator, and the middle end of the secondary coil of the second transformer is grounded, the second end of the third crystal resonator is also directly grounded through an inductor, the third capacitor is connected with the inductor in parallel, and two ends of the primary coil of the second transformer are used as output ends of the crystal filter. In the prior art, each crystal resonator in the crystal filter circuit is independently packaged, namely, one crystal resonator comprises a wafer and a pair of electrodes on the wafer; the two crystal resonators include two wafers and two pairs of electrodes … … and the N crystal resonators include N wafers and N pairs of electrodes. Each crystal resonator is arranged on one wafer and is independently packaged, and the mode needs more wafers, so that the volume of the device is increased; moreover, the crystal resonators need to be connected through a peripheral circuit, so that the complexity of the circuit is increased; besides, in circuit design, a plurality of crystal resonators with the same electrical performance parameters are needed, certain electrical performance parameter differences exist in the crystal resonators due to the difference of the support structures of the crystal resonators, the thickness dispersibility of wafers and the film coating dispersibility of the wafers, if the parameter differences of the crystal resonators are large, the differences need to be compensated through circuit debugging, and the crystal resonators are not suitable for batch production.
Disclosure of Invention
In order to solve the above problems, the present invention provides a miniaturized lattice type crystal filter, in which a plurality of independent crystal resonators with the same electrical performance parameters are disposed on the same wafer, and the connection between the crystal resonators is directly realized on the wafer by a film plating method.
A miniaturized lattice crystal filter comprising: the crystal resonator comprises a first integrated lattice type crystal resonator, a second integrated lattice type crystal resonator, at least two variators and at least three capacitors, wherein the first integrated lattice type crystal resonator is provided with at least one high-frequency crystal resonator, the high-frequency crystal resonators on the first integrated lattice type crystal resonator are connected in a film coating mode, the second integrated lattice type crystal resonator is provided with at least one low-frequency crystal resonator, and the low-frequency crystal resonators on the second integrated lattice type crystal resonator are connected in a film coating mode.
Furthermore, the electrical performance parameters of the high-frequency crystal resonators on the first integrated lattice type crystal resonator are consistent, the electrical performance parameters of the low-frequency crystal resonators on the second integrated lattice type crystal resonator are consistent, and the high-frequency crystal resonators and the low-frequency crystal resonators are made of crystal materials with piezoelectric effects and are circular or rectangular.
Further, the arrangement of the high-frequency crystal resonator on the first integrated lattice type crystal resonator specifically includes: each high-frequency crystal resonator is arranged on the geometric symmetry axis of the first integrated lattice type crystal resonator, a certain distance is arranged between every two high-frequency crystal resonators, when the electrode is circular, the distance between the two high-frequency crystal resonators is generally 3-5 times of the diameter of the electrode, and when the electrode is rectangular, the distance between the two high-frequency crystal resonators is 3-5 times of the length of a connecting line along the geometric centers of the two rectangular electrodes; each high-frequency crystal resonator comprises a pair of circular or rectangular metal electrodes, each pair of metal electrodes comprises an upper electrode and a lower electrode, the upper electrode and the lower electrode are respectively deposited on the upper surface and the lower surface of the first integrated lattice type crystal resonator, and the positions of the upper electrode and the lower electrode are completely corresponding to each other; the arrangement of the low-frequency crystal resonator on the second integrated lattice type crystal resonator specifically comprises the following steps: each low-frequency crystal resonator is arranged on the geometric symmetry axis of the second integrated lattice type crystal resonator, a certain distance is arranged between every two low-frequency crystal resonators, when the electrode is circular, the distance between the two low-frequency crystal resonators is generally 3-5 times of the diameter of the circular electrode, and when the electrode is rectangular, the distance between the two low-frequency crystal resonators is 3-5 times of the length of a connecting line along the geometric centers of the two rectangular electrodes; each low-frequency crystal resonator comprises a pair of circular or rectangular metal electrodes, each pair of metal electrodes comprises an upper electrode and a lower electrode, and the upper electrode and the lower electrode are respectively deposited on the upper surface and the lower surface of the second integrated lattice type crystal resonator and are completely corresponding in position.
Furthermore, two electrode tracks are respectively led out from two electrodes at two ends of the lower surfaces of the first integrated lattice type crystal resonator and the second integrated lattice type crystal resonator, the leading-out directions of the two electrode tracks are opposite, the two electrode tracks are overlapped with the geometric symmetry central axis of the wafer, two connection points are respectively formed between the two electrode tracks and the edge of the wafer, and the two connection points are used as the input end and the output end of the crystal resonator.
Furthermore, every two electrodes on the upper surfaces of the first integrated lattice type crystal resonator and the second integrated lattice type crystal resonator are connected through an electrode track, the electrode track is overlapped with the geometric symmetry central axis of the wafer, an electrode track is vertically led out from the midpoint of the electrode track to the edge of the wafer and form a connection point with the edge of the wafer, and the connection point is used as a common end between the two crystal resonators.
Further, the variable device comprises at least a first variable device and a second variable device, wherein the first variable device and the second variable device respectively comprise a primary coil and a secondary coil; two ends of a primary coil of the first variable device are used as input ends of the crystal filter, two ends of a secondary coil of the first variable device are respectively connected with the input ends of the high-frequency crystal resonator and the low-frequency crystal resonator, and the middle end of the secondary coil of the first variable device is grounded; two ends of a primary coil of the second variable device are used as output ends of the crystal filter, two ends of a secondary coil of the second variable device are respectively connected with output ends of the high-frequency resonator and the low-frequency crystal resonator, and the middle end of the secondary coil of the second variable device is grounded.
Furthermore, the capacitors at least comprise a first capacitor, a second capacitor and a third capacitor, one end of the first capacitor is connected with a common end formed by the first variable transformer and the input end of the high-frequency crystal resonator, and the other end of the first capacitor is grounded; one end of the second capacitor is connected with a common end formed by the second variable transformer and the output end of the high-frequency crystal resonator, and the other end of the second capacitor is grounded.
Furthermore, the common end of the high-frequency crystal resonator and the low-frequency crystal resonator is grounded through a third capacitor.
A miniaturized lattice crystal filter comprising: the integrated lattice type crystal resonator comprises a first integrated lattice type crystal resonator, a second integrated lattice type crystal resonator, two transformers and three capacitors, wherein the first integrated lattice type crystal resonator is provided with two high-frequency crystal resonators; the second integrated lattice type crystal resonator is provided with two low-frequency crystal resonators, the electrical performance parameters of the low-frequency crystal resonators on the second integrated lattice type crystal resonator are consistent, and the two low-frequency crystal resonators on the second integrated lattice type crystal resonator are connected in a film coating mode; the high-frequency crystal resonator and the low-frequency crystal resonator are both made of crystal materials with piezoelectric effect and are circular or rectangular;
the arrangement of the high-frequency crystal resonator on the first integrated lattice type crystal resonator specifically comprises the following steps: each high-frequency crystal resonator is arranged on the geometric symmetry axis of the first integrated lattice type crystal resonator, and a certain distance is reserved between the two high-frequency crystal resonators; each high-frequency crystal resonator comprises a pair of circular or rectangular metal electrodes, each pair of metal electrodes comprises an upper electrode and a lower electrode, the upper electrode and the lower electrode are respectively deposited on the upper surface and the lower surface of the first integrated lattice type crystal resonator, and the positions of the upper electrode and the lower electrode are completely corresponding to each other; the arrangement of the low-frequency crystal resonator on the second integrated lattice type crystal resonator specifically comprises the following steps: each low-frequency crystal resonator is arranged on the geometric symmetry axis of the second integrated lattice type crystal resonator, and a certain distance is reserved between the two low-frequency crystal resonators; each low-frequency crystal resonator comprises a pair of circular or rectangular metal electrodes, each pair of metal electrodes comprises an upper electrode and a lower electrode, the upper electrode and the lower electrode are respectively deposited on the upper surface and the lower surface of the second integrated lattice type crystal resonator, and the positions of the upper electrode and the lower electrode are completely corresponding to each other; two electrode tracks are respectively led out from the two electrodes on the lower surfaces of the first integrated lattice type crystal resonator and the second integrated lattice type crystal resonator, the leading-out directions of the two electrode tracks are opposite, the two electrode tracks are overlapped with the geometric symmetry central axis of the wafer, two connecting points are respectively formed by the two electrode tracks and the edge of the wafer, and the two connecting points are used as the input end and the output end of the crystal resonator; two electrodes on the upper surfaces of the first integrated lattice type crystal resonator and the second integrated lattice type crystal resonator are connected through electrode tracks, the electrode tracks are overlapped with the geometric symmetry central axis of the wafer, one electrode track is vertically led out from the midpoint of the electrode tracks to the edge of the wafer to form a connection point with the edge of the wafer, and the connection point is used as a common end between the two crystal resonators.
Further, the transformer comprises a first transformer and a second transformer, and the first transformer and the second transformer each comprise a primary coil and a secondary coil; two ends of a primary coil of the first variable device are used as input ends of the crystal filter, two ends of a secondary coil of the first variable device are respectively connected with the input ends of the high-frequency crystal resonator and the low-frequency crystal resonator, and the middle end of the secondary coil of the first variable device is grounded; two ends of a primary coil of the second variable device are used as output ends of the crystal filter, two ends of a secondary coil of the second variable device are respectively connected with output ends of the high-frequency resonator and the low-frequency crystal resonator, and the middle end of the secondary coil of the second variable device is grounded; the capacitors comprise a first capacitor, a second capacitor and a third capacitor, one end of the first capacitor is connected with a common end formed by the first variable transformer and the input end of the high-frequency crystal resonator, and the other end of the first capacitor is grounded; one end of the second capacitor is connected with a common end formed by the second variable transformer and the output end of the high-frequency crystal resonator, and the other end of the second capacitor is grounded; and the common end of the high-frequency crystal resonator and the low-frequency crystal resonator is grounded through a third capacitor.
A method of making a miniaturized lattice crystal filter, comprising: processing an electrode mask clamp by adopting high-precision linear cutting equipment, hollowing out two pairs of metal electrodes to be deposited, electrode track leading-out ends and two pairs of crystal resonator circuit connecting parts by utilizing the electrode mask clamp, and covering the rest parts; putting the wafer into a clamp, and depositing a metal electrode with a certain thickness by adopting an electron beam or magnetron sputtering mode; and then, the crystal resonator which combines two crystal resonators into one is manufactured by the processes of frequency modulation, installation of a crystal resonator bracket, coating of conductive glue and capping.
The beneficial effect of this patent:
1. the volume is reduced, and the cost is reduced. In the traditional crystal filter, each crystal resonator adopts independent packaging, and the crystal resonators with the same parameters are arranged on a wafer to form an independent packaging device, so that the number of used wafers is greatly reduced, the number of the shells of the crystal resonators is also greatly reduced, the size of the device is reduced, and the cost of the device is also reduced.
2. The circuit complexity is reduced. The crystal resonators packaged independently need to be connected with each other through an additional peripheral circuit, and the crystal resonators on the same wafer are connected with each other in a film coating mode.
3. The consistency of the components is improved, and the method is suitable for batch production. According to the manufacturing method, the crystal resonators with the same electrical performance parameters are manufactured on the same wafer in a coating mode, the same crystal resonator support and the same crystal resonator shell are adopted, the main crystal resonator manufacturing process is completed at the same time, the dispersity of the electrical performance parameters of the device caused by a plurality of processes in the manufacturing process is reduced, the consistency of the electrical performance parameters of the crystal resonators is improved, and the manufacturing method is suitable for mass production.
Drawings
The patent is described in further detail below with reference to the figures and the detailed description.
FIG. 1 is a circuit diagram of a crystal filter according to a preferred embodiment of the present patent;
FIG. 2 is a front view of a conventional single electrode transistor resonator;
FIG. 3 is a rear view of a conventional single electrode transistor resonator;
FIG. 4 is a front view of a two-electrode crystal resonator according to an embodiment of this patent;
FIG. 5 is a rear view of a two-electrode crystal resonator according to an embodiment of this patent.
Detailed Description
The technical solutions in the embodiments of the present patent will be clearly and completely described below with reference to the drawings in the embodiments of the present patent, and it is obvious that the described embodiments are only some embodiments of the present patent, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of protection of this patent.
Referring to fig. 1, fig. 1 is a circuit diagram of a crystal filter according to a preferred embodiment of the present invention, in which a miniaturized lattice crystal filter is a four-pole crystal filter, and includes: the integrated lattice type crystal resonator comprises a first integrated lattice type crystal resonator, a second integrated lattice type crystal resonator, two transformers and three capacitors, wherein the first integrated lattice type crystal resonator is provided with two high-frequency crystal resonators which are respectively as follows: the first crystal resonator f1, the second crystal resonator f2, the two high-frequency crystal resonators f1 and f2 on the first integrated lattice type crystal resonator have the same electrical performance parameters and external dimensions, and the two high-frequency crystal resonators on the first integrated lattice type crystal resonator are connected in a film coating mode. Two low-frequency crystal resonators are arranged on the second integrated lattice type crystal resonator, and the two low-frequency crystal resonators are respectively as follows: the third crystal resonator f3, the fourth crystal resonator f4 and the low-frequency crystal resonators f3 and f4 on the second integrated lattice type crystal resonator have the same electrical performance parameters and physical dimensions, and the two low-frequency crystal resonators on the second integrated lattice type crystal resonator are connected in a film coating mode.
Furthermore, the high-frequency crystal resonator and the low-frequency crystal resonator are made of crystal materials with piezoelectric effect and are circular or rectangular.
The arrangement of the high-frequency crystal resonators f1 and f2 on the first integrated lattice type crystal resonator specifically includes: each high-frequency crystal resonator is arranged on the geometric symmetry axis of the first integrated lattice type crystal resonator, and a certain distance is reserved between the two high-frequency crystal resonators; each high-frequency crystal resonator comprises a pair of circular or rectangular metal electrodes, each pair of metal electrodes is arranged on a geometric symmetry axis of the first integrated lattice type crystal resonator, each pair of metal electrodes comprises an upper electrode and a lower electrode, the upper electrode and the lower electrode are respectively deposited on the upper surface and the lower surface of the first integrated lattice type crystal resonator, and the positions of the upper surface and the lower surface are correspondingly overlapped.
The arrangement of the low-frequency crystal resonators f3 and f4 on the second integrated lattice type crystal resonator specifically comprises: each low-frequency crystal resonator is arranged on the geometric symmetry axis of the second integrated lattice type crystal resonator, and a certain distance is reserved between the two low-frequency crystal resonators; each low-frequency crystal resonator comprises a pair of circular or rectangular metal electrodes, each pair of metal electrodes is arranged on the geometric symmetry axis of the second integrated lattice type crystal resonator, each pair of metal electrodes comprises an upper electrode and a lower electrode, the upper electrode and the lower electrode are respectively deposited on the upper surface and the lower surface of the second integrated lattice type crystal resonator, and the positions of the upper surface and the lower surface are correspondingly overlapped.
The first crystal resonator f1, the second crystal resonator f2, the third crystal resonator f3, and the fourth crystal resonator f4 are all two-electrode crystal resonators.
The transformer comprises a first transformer L1, a second transformer L2, a first capacitor C1, a second capacitor C2 and a third capacitor C3. The crystal resonators f1 and f2 are high-frequency crystal resonators, and the crystal resonators f3 and f4 are low-frequency crystal resonators.
Two electrode tracks are led out from two electrodes on the lower surface of the first integrated lattice type crystal resonator respectively, the leading directions of the two electrode tracks are opposite, the two electrode tracks are overlapped with the geometric symmetry central axis of the first integrated lattice type crystal resonator, two connecting points are respectively formed by the two electrode tracks and the edge of the first integrated lattice type crystal resonator, and the two connecting points are used as the common input end and the common output end of the two high-frequency crystal resonators f1 and f2, as shown in fig. 5.
The two electrodes on the upper surface of the first integrated lattice type crystal resonator are connected by electrode tracks, the electrode tracks are coincident with the geometric symmetry central axis of the first integrated lattice type crystal resonator, one electrode track is vertically led out from the midpoint of the electrode tracks to the edge of the first integrated lattice type crystal resonator and form a connection point with the edge of the first integrated lattice type crystal resonator, and the connection point is used as the common end of the two high-frequency crystal resonators f1 and f2, as shown in fig. 4.
The common terminal of the crystal resonator f1 is directly connected to the common terminal of the crystal resonator f2 and is grounded via a capacitor C3.
The electrical performance parameters of the first crystal resonator f1 and the second crystal resonator f2 comprise resonance frequency, equivalent capacitance, equivalent inductance, equivalent resistance and the like, and preferably, the resonance frequency of f1 and f2 is 124.825 MHz: equivalent capacitance of f1 and f 2: equivalent inductances of 0.8pF, f1 and f 2: 1.8mH, equivalent resistances of f1 and f 2: 45 omega.
Two electrode tracks are led out from two electrodes on the lower surface of the second integrated lattice type crystal resonator respectively, the leading-out directions of the two electrode tracks are opposite and are superposed with the geometric symmetry central axis of the second integrated lattice type crystal resonator, the two electrode tracks form two connection points on the edge of the second integrated lattice type crystal resonator respectively, and the two connection points are used as the common input end and the common output end of the two low-frequency crystal resonators f3 and f 4.
Two electrodes on the upper surface of the second integrated lattice type crystal resonator are connected through electrode tracks, the geometric symmetry center axes of the electrode tracks and the second integrated lattice type crystal resonator are superposed, one electrode track is vertically led out from the middle point of the electrode tracks to the edge of the second integrated lattice type crystal resonator and form a connection point with the edge of the second integrated lattice type crystal resonator, and the connection point is used as the common end of the two low-frequency crystal resonators f3 and f 4.
The common terminal of the crystal resonator f3 is directly connected to the common terminal of the crystal resonator f4 and is grounded via a capacitor C3.
The electrical performance parameters of the third crystal resonator f3 and the fourth crystal resonator f4 include resonance frequency, equivalent capacitance, equivalent inductance, equivalent resistance and the like, and preferably, the resonance frequency of f3 and f4 is 124.730 MHz: the equivalent capacitance of f3 and f4 is: the equivalent inductances of 0.7pF, f3, and f4 are: 2.0mH, equivalent resistances of f3 and f4 are: 50 omega.
The variators include a first variator L1 and a second variator L2. The first variable device L1 is two inductors wound by two wires on a magnetic core, and includes a primary coil and a secondary coil, two ends of the primary coil of the first variable device L1 are used as input ends of the four-pole crystal filter, and the middle end of the primary coil is grounded; both ends of the secondary coil of the first transformer L1 are connected to the input terminals of the first crystal resonator f1 and the second crystal resonator f2, respectively, and the middle end of the secondary coil of the first transformer L1 is grounded. The second variable device L2 is two inductors wound by two wires on the magnetic core, and includes a primary coil and a secondary coil, and both ends of the primary coil of the second variable device L2 are used as the output ends of the four-pole crystal filter; one end of the secondary coil of the second transformer L2 is connected to the output terminal of the first crystal resonator f1, the other end of the secondary coil of the second transformer L2 is connected to the output terminal of the second crystal resonator f2, and the middle end of the secondary coil of the second transformer L2 is grounded.
The capacitors include a first capacitor C1, a second capacitor C2, and a third capacitor C3. One end of a first capacitor C1 is connected with a common end formed by the first variable transformer L1 and the input ends of the high-frequency crystal resonators f1 and f2, and the other end is grounded; one end of the second capacitor C2 is connected to the common terminal formed by the output ends of the variable transformer L2 and the crystal resonators f1 and f2, and the other end is grounded. The common ends of the high-frequency crystal resonators f1 and f2 and the low-frequency crystal resonators f3 and f4 are grounded through a third capacitor C3, and the third capacitor C3 is connected in parallel with the inductor.
The working principle of the four-pole crystal filter is as follows: each single section of lattice crystal filter consists of two crystal resonators and a transformer, the two crystal resonators have a high resonance frequency and a low resonance frequency, when the two resonance frequencies are worked, the polarity of the bridge circuit is opposite, the bridge circuit is unbalanced, and there is signal output to form the pass band of the filter, when the two resonance frequencies are worked, the bridge circuit is in balance, there is no signal output to form the stop band of the filter.
A method for manufacturing a miniaturized lattice type crystal filter includes the following steps: processing an electrode mask clamp by adopting high-precision linear cutting equipment, hollowing out two pairs of metal electrodes to be deposited, electrode track leading-out ends and two pairs of crystal resonator circuit connecting parts by utilizing the electrode mask clamp, and covering the rest parts; putting the wafer into a clamp, and depositing a metal electrode with a certain thickness by adopting an electron beam or magnetron sputtering mode; and then, the crystal resonator which combines two crystal resonators into one is manufactured by the processes of frequency modulation, installation of a crystal resonator bracket, coating of conductive glue and capping.
The above-mentioned embodiments, which have been described in further detail for the purpose of illustrating the invention and the purpose of promoting an understanding of the invention, are to be construed as merely illustrative of the preferred embodiments of the present invention and not as a limitation of the present invention, and all such modifications, equivalents, improvements and equivalents that fall within the spirit and scope of the appended claims are intended to be embraced by the present invention.
Claims (10)
1. A miniaturized lattice crystal filter comprising: the crystal resonator comprises a first integrated lattice type crystal resonator, a second integrated lattice type crystal resonator, at least two variators and at least three capacitors, and is characterized in that the first integrated lattice type crystal resonator is provided with at least one high-frequency crystal resonator, the high-frequency crystal resonators on the first integrated lattice type crystal resonator are connected in a film coating mode, the second integrated lattice type crystal resonator is provided with at least one low-frequency crystal resonator, and the low-frequency crystal resonators on the second integrated lattice type crystal resonator are connected in a film coating mode.
2. A miniaturized lattice crystal filter as claimed in claim 1, characterized in that the electrical properties of the high frequency crystal resonators on the first integrated lattice crystal resonator are identical, the electrical properties of the low frequency crystal resonators on the second integrated lattice crystal resonator are identical, and both the high frequency crystal resonators and the low frequency crystal resonators are made of a crystal material having a piezoelectric effect and have a circular or rectangular shape.
3. A miniaturized lattice crystal filter as claimed in claim 2, characterized in that the arrangement of the high-frequency crystal resonators on the first integrated lattice crystal resonator comprises in particular: each high-frequency crystal resonator is arranged on the geometric symmetry axis of the first integrated lattice type crystal resonator, and a certain distance is arranged between every two high-frequency crystal resonators; each high-frequency crystal resonator comprises a pair of circular or rectangular metal electrodes, each pair of metal electrodes comprises an upper electrode and a lower electrode, the upper electrode and the lower electrode are respectively deposited on the upper surface and the lower surface of the first integrated lattice type crystal resonator, and the positions of the upper electrode and the lower electrode are completely corresponding to each other; the arrangement of the low-frequency crystal resonator on the second integrated lattice type crystal resonator specifically comprises the following steps: each low-frequency crystal resonator is arranged on the geometric symmetry axis of the second integrated lattice type crystal resonator, and a certain distance is arranged between every two low-frequency crystal resonators; each low-frequency crystal resonator comprises a pair of circular or rectangular metal electrodes, each pair of metal electrodes comprises an upper electrode and a lower electrode, and the upper electrode and the lower electrode are respectively deposited on the upper surface and the lower surface of the second integrated lattice type crystal resonator and are completely corresponding in position.
4. A miniaturized lattice type crystal filter as claimed in claim 3, characterized in that two electrodes at both ends of the lower surfaces of the first integrated lattice type crystal resonator and the second integrated lattice type crystal resonator are respectively led out with an electrode track, the two electrode tracks are led out in opposite directions and are coincided with the geometric symmetry central axis of the wafer, the two electrode tracks and the edge of the wafer respectively form two connection points, and the two connection points are used as the input end and the output end of the crystal resonator.
5. A miniaturized lattice crystal filter as claimed in claim 3, characterized in that each two electrodes on the upper surfaces of the first integrated lattice crystal resonator and the second integrated lattice crystal resonator are connected by an electrode track, the electrode track coincides with the geometric center axis of symmetry of the wafer, an electrode track is perpendicularly led out from the midpoint of the electrode track to the edge of the wafer to form a connection point with the edge of the wafer, and the connection point is used as a common terminal between the two crystal resonators.
6. A miniaturized lattice crystal filter as claimed in claim 1, characterized in that said varactors comprise at least a first and a second varactor, said first and second varactors comprising a primary and a secondary coil, respectively; two ends of a primary coil of the first variable device are used as input ends of the crystal filter, two ends of a secondary coil of the first variable device are respectively connected with the input ends of the high-frequency crystal resonator and the low-frequency crystal resonator, and the middle end of the secondary coil of the first variable device is grounded; two ends of a primary coil of the second variable device are used as output ends of the crystal filter, two ends of a secondary coil of the second variable device are respectively connected with output ends of the high-frequency resonator and the low-frequency crystal resonator, and the middle end of the secondary coil of the second variable device is grounded.
7. A miniaturized lattice type crystal filter as claimed in claim 1, wherein said capacitor includes at least a first capacitor, a second capacitor and a third capacitor, one end of the first capacitor is connected to a common terminal formed by the first transformer and the input terminal of the high frequency crystal resonator, and the other end is grounded; one end of the second capacitor is connected with a common end formed by the second variable transformer and the output end of the high-frequency crystal resonator, and the other end of the second capacitor is grounded.
8. A miniaturized lattice crystal filter as claimed in claim 5 or 7, characterized in that the common terminal of the high-frequency crystal resonator and the low-frequency crystal resonator is grounded via a third capacitor.
9. A miniaturized lattice crystal filter comprising: the integrated lattice type crystal resonator comprises a first integrated lattice type crystal resonator, a second integrated lattice type crystal resonator, two transformers and three capacitors, and is characterized in that the first integrated lattice type crystal resonator is provided with two high-frequency crystal resonators, the electrical performance parameters of the two high-frequency crystal resonators on the first integrated lattice type crystal resonator are consistent, and the two high-frequency crystal resonators on the first integrated lattice type crystal resonator are connected in a film coating mode; the second integrated lattice type crystal resonator is provided with two low-frequency crystal resonators, the electrical performance parameters of the low-frequency crystal resonators on the second integrated lattice type crystal resonator are consistent, and the two low-frequency crystal resonators on the second integrated lattice type crystal resonator are connected in a film coating mode; the high-frequency crystal resonator and the low-frequency crystal resonator are both made of crystal materials with piezoelectric effect and are circular or rectangular;
the arrangement of the high-frequency crystal resonator on the first integrated lattice type crystal resonator specifically comprises the following steps: each high-frequency crystal resonator is arranged on the geometric symmetry axis of the first integrated lattice type crystal resonator, and a certain distance is reserved between the two high-frequency crystal resonators; each high-frequency crystal resonator comprises a pair of circular or rectangular metal electrodes, each pair of metal electrodes comprises an upper electrode and a lower electrode, the upper electrode and the lower electrode are respectively deposited on the upper surface and the lower surface of the first integrated lattice type crystal resonator, and the positions of the upper electrode and the lower electrode are completely corresponding to each other; the arrangement of the low-frequency crystal resonator on the second integrated lattice type crystal resonator specifically comprises the following steps: each low-frequency crystal resonator is arranged on the geometric symmetry axis of the second integrated lattice type crystal resonator, and a certain distance is reserved between the two low-frequency crystal resonators; each low-frequency crystal resonator comprises a pair of circular or rectangular metal electrodes, each pair of metal electrodes comprises an upper electrode and a lower electrode, the upper electrode and the lower electrode are respectively deposited on the upper surface and the lower surface of the second integrated lattice type crystal resonator, and the positions of the upper electrode and the lower electrode are completely corresponding to each other;
two electrode tracks are respectively led out from the two electrodes on the lower surfaces of the first integrated lattice type crystal resonator and the second integrated lattice type crystal resonator, the leading-out directions of the two electrode tracks are opposite, the two electrode tracks are overlapped with the geometric symmetry central axis of the wafer, two connecting points are respectively formed by the two electrode tracks and the edge of the wafer, and the two connecting points are used as the input end and the output end of the crystal resonator;
two electrodes on the upper surfaces of the first integrated lattice type crystal resonator and the second integrated lattice type crystal resonator are connected through electrode tracks, the electrode tracks are overlapped with the geometric symmetry central axis of the wafer, one electrode track is vertically led out from the midpoint of the electrode tracks to the edge of the wafer to form a connection point with the edge of the wafer, and the connection point is used as a common end between the two crystal resonators.
10. A miniaturized lattice crystal filter as claimed in claim 9, characterized in that said varistors comprise a first and a second varistors, each comprising a primary and a secondary coil; two ends of a primary coil of the first variable device are used as input ends of the crystal filter, two ends of a secondary coil of the first variable device are respectively connected with the input ends of the high-frequency crystal resonator and the low-frequency crystal resonator, and the middle end of the secondary coil of the first variable device is grounded; two ends of a primary coil of the second variable device are used as output ends of the crystal filter, two ends of a secondary coil of the second variable device are respectively connected with output ends of the high-frequency resonator and the low-frequency crystal resonator, and the middle end of the secondary coil of the second variable device is grounded;
the capacitors comprise a first capacitor, a second capacitor and a third capacitor, one end of the first capacitor is connected with a common end formed by the first variable transformer and the input end of the high-frequency crystal resonator, and the other end of the first capacitor is grounded; one end of the second capacitor is connected with a common end formed by the second variable transformer and the output end of the high-frequency crystal resonator, and the other end of the second capacitor is grounded;
and the common end of the high-frequency crystal resonator and the low-frequency crystal resonator is grounded through a third capacitor.
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