CN211880296U - Driving circuit - Google Patents
Driving circuit Download PDFInfo
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- CN211880296U CN211880296U CN202020534162.4U CN202020534162U CN211880296U CN 211880296 U CN211880296 U CN 211880296U CN 202020534162 U CN202020534162 U CN 202020534162U CN 211880296 U CN211880296 U CN 211880296U
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Abstract
The utility model discloses a driving circuit, which comprises an IGBT driving signal PWM, a power supply, a first switch, a second switch, a third switch, a fourth switch and an IGBT tube; wherein the IGBT driving signal PWM controls the first switch, the second switch, the third switch and the fourth switch; one end of the first switch is connected with the positive electrode of the power supply, and the other end of the first switch is connected with the gate pole of the IGBT tube; one end of the second switch is connected with the negative electrode of the power supply, and the other end of the second switch is connected with the gate pole of the IGBT tube; one end of the third switch is connected with the positive electrode of the power supply, and the other end of the third switch is connected with the emitting electrode of the IGBT tube; one end of the fourth switch is connected with the negative electrode of the power supply, and the other end of the fourth switch is connected with the emitting electrode of the IGBT tube; the utility model discloses a cooperation between four switches, when having solved IGBT single power drive, the unable stable problem of closing the IGBT module makes single power supply reach dual power supply's effect.
Description
Technical Field
The utility model relates to an electronic circuit technical field, concretely relates to drive circuit.
Background
An Insulated GAte BipolAr Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device consisting of a BipolAr Junction Transistor (BJT) and an insulated GAte field effect transistor (MOS), and has the advantages of high input impedance of the MOSFET and low conduction voltage drop of the GTR. The GTR saturation voltage is reduced, the current carrying density is high, but the driving current is large; the MOSFET has small driving power, high switching speed, large conduction voltage drop and small current carrying density. The IGBT integrates the advantages of the two devices, and has small driving power and reduced saturation voltage.
As a power switch device, the IGBT is a core component for new energy conversion and transmission, and is widely used in the field of power electronics, such as industrial frequency converters, electric vehicle drivers, and high-power Uninterruptible Power Supplies (UPSs). In order to safely and reliably use the IGBT, the IGBT module needs to be driven by positive and negative double power supplies, namely when the IGBT is switched on, the gate voltage of the IGBT is positive; when the IGBT is turned off, the gate voltage of the IGBT is negative. However, in some occasions, only the positive power supply supplies power, and the negative power supply cannot be provided to turn off the power supply.
In a conventional single power supply driving circuit diagram structure, as shown in fig. 1, Q1 is an IGBT, three terminals are a collector C, a gate G and an emitter E, respectively, and when a voltage VGE between the gate G and the emitter E is positive, the IGBT Q1 is turned on; when the voltage VGE between the gate G and the emitter E is 0 or negative, the IGBT Q1 turns off. In the conventional single power supply driving circuit, the IGBT driving signal PWM controls the switches S1 and S2; if the PWM is high, S1 is switched on, S2 is switched off, the voltage of the positive pole + V1 of the power supply is connected to the gate G of the IGBT through the gate driving resistor R1, the voltage VGE between the gate G and the emitter E is equal to the power supply voltage + V1, and the IGBT is switched on. If the PWM is low, S1 is turned off, S2 is turned on, the negative pole of the power supply is 0V, the power supply is connected to the gate G of the IGBT through the gate driving resistor R1, the voltage VGE between the gate G and the emitter E is 0V, and the IGBT is turned off.
The existing IGBT driving circuit needs a positive power supply and a negative power supply to reliably switch an IGBT module, if only the single power supply is used for supplying power to the module, when the IGBT is switched off, the gate voltage is 0V, and due to the Miller effect, the IGBT is easy to be switched on by mistake, so that the IGBT cannot be stably switched off, the positive power supply and the negative power supply have high cost, and in consideration of cost, the single power supply is still used in many occasions.
SUMMERY OF THE UTILITY MODEL
The utility model aims to overcome the defects of the prior art, and provides a driving circuit, which solves the problem that the IGBT module can not be stably closed when the IGBT single power supply is driven, and the gate pole voltage is 0V when the traditional single power supply driving circuit is turned off; the utility model discloses a cooperation between four switches, when turn-offeing, gate pole voltage is the negative voltage to make the single power supply reach dual power supply's effect.
In order to realize the purpose of the utility model, the utility model discloses a technical scheme realize as follows: a driving circuit comprises an IGBT driving signal PWM, a power supply, a first switch, a second switch, a third switch, a fourth switch and an IGBT tube; wherein the content of the first and second substances,
the IGBT driving signal PWM controls the first switch, the second switch, the third switch and the fourth switch; one end of the first switch is connected with the positive electrode of the power supply, and the other end of the first switch is connected with the gate pole of the IGBT tube; one end of the second switch is connected with the negative electrode of the power supply, and the other end of the second switch is connected with the gate pole of the IGBT tube; one end of the third switch is connected with the positive electrode of the power supply, and the other end of the third switch is connected with the emitting electrode of the IGBT tube; one end of the fourth switch is connected with the negative electrode of the power supply, and the other end of the fourth switch is connected with the emitting electrode of the IGBT tube;
when the IGBT driving signal PWM is high, the first switch and the fourth switch are switched on, the second switch and the third switch are switched off, and then the positive electrode of the power supply is connected to the gate pole of the IGBT tube through the first switch; the emitter of the IGBT tube is connected to the negative electrode of the power supply through a fourth switch, at the moment, the voltage between the gate pole of the IGBT tube and the emitter is the voltage of the positive electrode of the power supply, and the IGBT tube is switched on;
when the IGBT driving signal PWM is low, the first switch and the fourth switch are switched off, the second switch and the third switch are switched on, and then the negative electrode of the power supply is connected to the gate pole of the IGBT tube through the second switch; and the emitter of the IGBT tube is connected to the positive electrode of the power supply through a third switch, at the moment, the voltage between the gate electrode and the emitter of the IGBT tube is the voltage of the negative electrode of the power supply, and the IGBT tube is turned off.
Preferably, a gate driving resistor is connected in series with the gate of the IGBT tube.
Preferably, the magnitude of the gate drive resistor controls the switching speed of the IGBT tube.
Preferably, the first switch and the third switch are NPN triodes.
Preferably, the second switch and the fourth switch are PNP transistors.
Preferably, a first voltage regulator tube and a second voltage regulator tube are connected in parallel between a gate electrode and an emitting electrode of the IGBT tube, and the first voltage regulator tube and the second voltage regulator tube are connected in series in a reverse direction.
Preferably, an anti-static protection resistor is connected in parallel between the gate electrode and the emitter electrode of the IGBT tube.
Advantageous effects
Compared with the prior art, the utility model discloses the beneficial effect who gains does: the utility model provides a drive circuit of IGBT when having solved current single power drive of IGBT, the unable stable problem of closing the IGBT module, traditional single power drive circuit, when turn-offs, gate pole voltage is 0V, the utility model discloses a cooperation between four switches, when turn-offs, gate pole voltage is the negative voltage to make single power supply reach dual power supply's effect.
Drawings
Fig. 1 is a circuit configuration diagram of a conventional single power supply driving circuit;
fig. 2 is a circuit diagram of a driving circuit according to embodiment 1 of the present invention;
fig. 3 is a circuit diagram of a driving circuit when the IGBT tube according to embodiment 1 of the present invention is turned on;
fig. 4 is a circuit diagram of a driving circuit when the IGBT tube according to embodiment 1 of the present invention is turned off;
fig. 5 is a circuit diagram of a drive circuit according to embodiment 2 of the present invention.
Detailed Description
The following describes the present invention with reference to the accompanying drawings.
Example 1
As shown in fig. 2 to 4, a driving circuit includes an IGBT driving signal PWM, a power supply, a first switch, a second switch, a third switch, a fourth switch, and an IGBT; wherein the content of the first and second substances,
the IGBT driving signal PWM controls the first switch S1, the second switch S2, the third switch S3 and the fourth switch S4;
pulse Width Modulation (PWM), which is an analog control method, modulates the bias of the transistor base or the MOS transistor gate according to the change of the corresponding load to change the conduction time of the transistor or the MOS transistor, thereby changing the output of the switching regulator. This way the output voltage of the power supply can be kept constant when the operating conditions change, which is a very effective technique for controlling an analog circuit by means of the digital signal of the microprocessor.
And a gate driving resistor R1 is connected in series with the gate G of the IGBT tube, and the switching speed of the IGBT tube is controlled by the size of the gate driving resistor R1.
One end of the first switch S1 is connected with the positive electrode of the power supply, and the other end is connected with the gate pole G of the IGBT tube; one end of the second switch S2 is connected with the negative electrode of the power supply, and the other end is connected with the gate pole G of the IGBT tube; one end of the third switch S3 is connected with the positive electrode of the power supply, and the other end of the third switch S3 is connected with the emitter E of the IGBT tube; one end of the fourth switch S4 is connected with the negative electrode of the power supply, and the other end of the fourth switch S4 is connected with the emitter E of the IGBT tube;
as shown in fig. 3, when the IGBT driving signal PWM is high, the first switch S1 and the fourth switch S4 are turned on, and the second switch S2 and the third switch S3 are turned off, so that the positive electrode of the power supply is connected to the gate G of the IGBT transistor through the first switch S1; the emitter E of the IGBT tube is connected to the negative electrode of the power supply through a fourth switch S4, at the moment, the voltage VGE between the gate G of the IGBT tube and the emitter E is the positive electrode voltage of the power supply, and the IGBT tube is switched on;
as shown in fig. 4, when the IGBT driving signal PWM is low, the first switch S1 and the fourth switch S4 are turned off, the second switch S2 and the third switch S3 are turned on, and the negative electrode of the power supply is connected to the gate G of the IGBT transistor through the second switch S2; the emitter E of the IGBT tube is connected to the positive electrode of the power supply through a third switch S3, at the moment, the voltage VGE between the gate G and the emitter E of the IGBT tube is the negative electrode voltage of the power supply, and the IGBT tube is turned off;
the utility model discloses when mainly having solved the single power drive of IGBT, the unable stable problem of closing the IGBT module, traditional single power drive circuit, when turn-offs, gate pole voltage is 0V, the utility model discloses a cooperation between four switches, when turn-offs, gate pole voltage is the negative voltage to make single power supply reach dual power supply's effect.
Example 2
As shown in fig. 5, a driving circuit includes an IGBT driving signal PWM, a switch control circuit, a power supply, a first switch, a second switch, a third switch, a fourth switch, a protection circuit, and an IGBT;
the first switch S1 and the third switch S3 are NPN triodes; the second switch S2 and the fourth switch S4 are PNP triodes.
The switch control circuit comprises a capacitor C1, resistors R2-R7 and MOS (metal oxide semiconductor) tubes S5 and S6;
the IGBT driving signal PWM is connected with the grid electrode of the MOS tube S5 through a resistor R2; the capacitor C1 is connected in parallel between the grid and the source of the MOS tube; and the capacitor C1 and the resistor R2 form a filter circuit for filtering the IGBT driving signal PWM.
The MOS tube S5 and the MOS tube S6 are enhancement type N-channel field effect tubes; the source electrode of the MOS tube S5 is connected with the negative electrode of a power supply; the drain electrode of the MOS tube S5 is connected with the positive electrode of a power supply through a resistor R3; the gate of the MOS tube S6 is connected with the drain of the MOS tube S5 through a resistor R4; the source electrode of the MOS tube S6 is connected with the negative electrode of a power supply; the drain electrode of the MOS tube S6 is connected with the positive electrode of a power supply through a resistor R5; a collector of the triode S1 is connected with a positive electrode of a power supply, a base of the triode S1 is connected with a point B through a resistor R6, the point B is positioned between the resistor R5 and a drain of the MOS transistor S6, and an emitter of the triode S1 is connected with a gate G of the IGBT transistor through a gate driving resistor R1; the base electrode of the triode S2 is connected with the point B through the resistor R6, the collector electrode of the triode S2 is connected with the negative electrode of a power supply, and the emitter electrode of the triode S is connected with the gate electrode G of the IGBT tube through the gate electrode driving resistor R1; the base electrode of the triode S3 is connected with a point A through a resistor R7, the point A is located between the resistor R3 and the drain electrode of the MOS tube S5, the resistor R4 is connected between the point A and the drain electrode of the MOS tube S5, the collector electrode of the triode S3 is connected with the positive electrode of a power supply, and the emitter electrode of the triode S3 is connected with the source electrode of the IGBT tube; the base of the triode S4 is connected with the point A through a resistor R7, the collector of the triode S4 is connected with the negative electrode of the power supply, and the emitter of the triode switch S4 is connected with the source of the IGBT tube.
After the IGBT driving signal PWM passes through the filter circuit, the voltage of a point A is controlled through an MOS tube S5 and a resistor R3, the voltage of the point A controls the connection and disconnection of a triode S3 and an triode S4 through a resistor R7, the voltage of the point A also controls the voltage of a point B through an MOS tube S6 and a resistor R5, and the voltage of the point B controls the connection and disconnection of the triodes S1 and S2 through a resistor R6.
And a gate driving resistor R1 is connected in series with the gate G of the IGBT tube, and the switching speed of the IGBT tube is controlled by the size of the gate driving resistor R1.
The protection circuit comprises an anti-static protection resistor R8, a first voltage regulator tube DZ1 and a second voltage regulator tube DZ 2; the resistor R8 is connected in parallel between the gate G and the emitter E of the IGBT tube, and the gate G of the IGBT tube is prevented from being opened.
The first voltage-stabilizing tube DZ1 and the second voltage-stabilizing tube DZ2 are reversely connected in series and then connected in parallel between the gate G and the emitter E of the IGBT tube, so that the voltage VGE between the gate G and the emitter E of the IGBT tube is prevented from exceeding the maximum voltage value +/-20V of the gate G of the IGBT tube.
As shown in fig. 5, when the IGBT driving signal PWM is high, after being filtered by the filter circuit, the MOS transistor S5 is turned on, the voltage at the point a is low, the point a turns off the MOS transistor S6 through the resistor R4, the resistor R5 pulls the voltage at the point B high, and the voltage at the point B is high; the low voltage of the point A enables a triode S3 to be turned off through a resistor R7, S4 is turned on, and an emitter E of the IGBT tube is connected to the negative pole 0V of a power supply through a triode S4; the high voltage at B point makes the transistor S1 turn on through R6, the transistor S2 turns off, the gate G of the IGBT tube is connected to the positive pole of the power supply + V1 through the gate driving resistors R1 and S1. The VGE voltage of an IGBT gate is a positive value, VGE is V1 power voltage-S1 conduction voltage drop-S4 conduction voltage drop, the conduction voltage drop of the triode S1 and S4 is very low, so that the VGE is approximately equal to the V1 power voltage value, and the IGBT tube is switched on;
as shown in fig. 5, when the IGBT driving signal PWM is low, after being filtered by the filter circuit, the MOS transistor S5 is turned off, the resistor R3 pulls the voltage at the point a high, the voltage at the point a turns on the MOS transistor S6 through the resistor R4, and the voltage at the point B is low; the high voltage of the A point enables a triode S3 to be conducted through a resistor R7, a triode S4 is turned off, and an emitter E of the IGBT tube is connected to the positive pole of a power supply + V1 through a triode S3; the low voltage at the point B enables the transistor S1 to be turned off through the resistor R6, the transistor S2 is turned on, and the gate G of the IGBT tube is connected to the negative electrode 0V of the power supply through the gate driving resistor R1 and the transistor S2. The gate electrode VGE voltage of the IGBT tube is a negative value, the VGE is-V1 power voltage + S2 conduction voltage drop + S3 conduction voltage drop, the conduction voltage drop of the triode S2 and S3 is very low, the VGE is approximately equal to the negative V1 power voltage value, and the IGBT tube is turned off;
the utility model discloses when mainly having solved IGBT single power drive, unable stable IGBT module of closing. Traditional single power drive circuit, when turn-offs, gate pole voltage is 0V, the utility model discloses a cooperation between four switches, when turn-offs, gate pole voltage is the negative voltage to make the single power supply reach dual power supply's effect.
The above description is only an embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions within the technical scope of the present disclosure should be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims; variations and modifications to the above-described embodiments may occur to those skilled in the art, in light of the above teachings and teachings. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some modifications and changes to the present invention should fall within the protection scope of the claims of the present invention. Furthermore, although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation.
Claims (6)
1. A driving circuit is characterized by comprising an IGBT driving signal PWM, a power supply, a first switch, a second switch, a third switch, a fourth switch and an IGBT tube; wherein the content of the first and second substances,
the IGBT driving signal PWM controls the first switch, the second switch, the third switch and the fourth switch; one end of the first switch is connected with the positive electrode of the power supply, and the other end of the first switch is connected with the gate pole of the IGBT tube; one end of the second switch is connected with the negative electrode of the power supply, and the other end of the second switch is connected with the gate pole of the IGBT tube; one end of the third switch is connected with the positive electrode of the power supply, and the other end of the third switch is connected with the emitting electrode of the IGBT tube; one end of the fourth switch is connected with the negative electrode of the power supply, and the other end of the fourth switch is connected with the emitting electrode of the IGBT tube;
when the IGBT driving signal PWM is high, the first switch and the fourth switch are switched on, the second switch and the third switch are switched off, the positive electrode of the power supply is connected to the gate electrode of the IGBT tube through the first switch, the emitting electrode of the IGBT tube is connected to the negative electrode of the power supply through the fourth switch, at the moment, the voltage between the gate electrode and the emitting electrode of the IGBT tube is the voltage of the positive electrode of the power supply, and the IGBT tube is switched on;
when the IGBT driving signal PWM is low, the first switch and the fourth switch are switched off, the second switch and the third switch are switched on, the negative electrode of the power supply is connected to the gate electrode of the IGBT tube through the second switch, the emitting electrode of the IGBT tube is connected to the positive electrode of the power supply through the third switch, at the moment, the voltage between the gate electrode and the emitting electrode of the IGBT tube is the voltage of the negative electrode of the power supply, and the IGBT tube is switched off.
2. A driver circuit according to claim 1, wherein: and the gate pole of the IGBT tube is connected with a gate pole driving resistor in series.
3. A driver circuit according to claim 1, wherein: the first switch and the third switch are NPN triodes.
4. A driver circuit according to claim 1, wherein: the second switch and the fourth switch are PNP triodes.
5. A driver circuit according to claim 1, wherein: and a first voltage-stabilizing tube and a second voltage-stabilizing tube are connected in parallel between the gate pole and the emitting pole of the IGBT tube, and are connected in series in a reverse direction.
6. A driver circuit according to claim 1, wherein: and an anti-static protection resistor is connected in parallel between the gate electrode and the emitter electrode of the IGBT tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020534162.4U CN211880296U (en) | 2020-04-13 | 2020-04-13 | Driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020534162.4U CN211880296U (en) | 2020-04-13 | 2020-04-13 | Driving circuit |
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| Publication Number | Publication Date |
|---|---|
| CN211880296U true CN211880296U (en) | 2020-11-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020534162.4U Active CN211880296U (en) | 2020-04-13 | 2020-04-13 | Driving circuit |
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| CN (1) | CN211880296U (en) |
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- 2020-04-13 CN CN202020534162.4U patent/CN211880296U/en active Active
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Effective date of registration: 20230630 Address after: Room 201, Building A, No. 1, Qianwan Road, Qianhai-Shenzhen-Hong Kong Cooperation Zone, Shenzhen, Guangdong Province, 518000 Patentee after: Shenzhen panstar Technology Co.,Ltd. Address before: Room 102A, Building A, Huahan Innovation Park, No. 16 Langshan Road, North District, Yuehai Street, Nanshan District, Shenzhen City, Guangdong Province, 518054 Patentee before: Shenzhen fanshida Power Electronics Technology Co.,Ltd. |