CN211879365U - Glass-sealed diode with round nail supporting block - Google Patents
Glass-sealed diode with round nail supporting block Download PDFInfo
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- CN211879365U CN211879365U CN202020826044.0U CN202020826044U CN211879365U CN 211879365 U CN211879365 U CN 211879365U CN 202020826044 U CN202020826044 U CN 202020826044U CN 211879365 U CN211879365 U CN 211879365U
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Abstract
The utility model provides a take glass of round nail supporting shoe to seal diode, including glass shell, chip, first electrode, second electrode, the first electrode include with first leading electrical pillar, first curb plate that the chip is connected, the second electrode include with the second that the chip is connected leads electrical pillar, second curb plate, the glass shell cover is established first leading electrical pillar, chip, second lead the electrical pillar outside, first curb plate, second curb plate lean on to a chip terminal surface all is equipped with a n round nail supporting shoe, and n is the integer and 3 is not less than n and is less than or equal to 6, the round nail supporting shoe distributes evenly first leading electrical pillar, second lead electrical pillar edge. The utility model discloses a glass seals diode has increased evenly distributed's round nail supporting shoe, utilizes the supporting role of round nail supporting shoe, only combines with the bar supporting shoe after the glass casing solidification, has reduced combination area between them, has avoided the crackle problem that traditional full laminated structure appears, has guaranteed the leakproofness of product.
Description
Technical Field
The utility model relates to a diode processing technology field, concretely relates to take glass of round nail supporting shoe to seal diode.
Background
The diode is one of the most commonly used electronic components, and its largest characteristic is unidirectional conduction, that is, current can only flow through the diode in one direction, and the diode is used as a rectifying circuit, a detecting circuit, a voltage stabilizing circuit and various modulation circuits, and therefore, the diode is widely used in various electronic devices. The glass sealed diode is one of diodes, is composed of an electrode, a glass shell and a wafer, and the processing process is as follows: and after the electrode, the glass shell and the wafer are assembled, the electrode, the glass shell and the wafer are sent into a sintering furnace to be sintered. In the sintering process, the glass shell can be softened, two ends of the softened glass shell are respectively welded with the diode electrodes, and the wafer is sealed in the middle. For the conventional diode 6, as shown in fig. 1, since the glass casing is made of glass, the diode electrode is usually made of alloy, the temperature characteristics of the glass casing and the diode electrode have a large difference, after the glass casing is cooled and solidified, the glass casing and the end face of the diode electrode can be combined in a full-lamination manner, and due to the temperature characteristics of the glass casing and the diode electrode, cracks 7 can occur on the combining surface of the glass casing and the diode electrode, some cracks 7 can be wide, and the sealing performance of the product is seriously affected.
SUMMERY OF THE UTILITY MODEL
To above problem, the utility model provides a take glass of round nail supporting shoe to seal diode has increased a plurality of evenly distributed's round nail supporting shoe, utilizes the supporting role of round nail supporting shoe, only combines with the round nail supporting shoe after the glass casing solidification, has reduced the combination area between them, has avoided the crackle problem that traditional full laminated structure appears, has guaranteed the leakproofness of product.
In order to achieve the above object, the present invention provides the following technical solutions:
the utility model provides a take glass of round nail supporting shoe to seal diode, includes glass shell, chip, connect first electrode, the second electrode at chip both ends, first electrode include with the first conductive post that the chip is connected, connect in the first curb plate of leading first conductive post one end, the second electrode include with the second that the chip is connected lead electrical pillar, connect in the second lead electrical pillar one end the second curb plate, the glass shell cover is established lead electrical pillar, chip, second in the first conductive post outside, first curb plate, second curb plate lean on to a chip terminal surface all is equipped with a plurality of round nail supporting shoes of n, and n is the integer and 3 is not less than n and not more than 6, the round nail supporting shoe evenly distribute in first conductive post, second lead electrical pillar edge.
Specifically, the chip comprises a P region and an N region, wherein the P region is connected with the first electrode, and the N region is connected with the second electrode.
Specifically, the first side plate and the second side plate are cylindrical structures.
Specifically, the middle part of the glass shell is provided with a through hole matched with the first conductive column and the second conductive column.
Specifically, the height of the round nail supporting block along the central axis direction of the first conductive column is H, and H is more than or equal to 0.5mm and less than or equal to 2 mm.
Specifically, n is 3, and every three round nail supporting blocks are distributed on the edges of the first conductive column and the second conductive column in a regular triangle structure.
The utility model has the advantages that:
the utility model discloses a take glass of round nail supporting shoe to seal diode has increased a plurality of evenly distributed's round nail supporting shoe in the bipolar junction inboard, utilizes the supporting role of round nail supporting shoe, only combines with the round nail supporting shoe after the glass casing solidification, has reduced the combination area between them, has avoided the crackle problem that traditional full laminated structure appears, has guaranteed the leakproofness of product.
Drawings
Fig. 1 is a schematic structural view of a conventional diode, in which cracks are generated at the junction of a glass envelope and an electrode.
Fig. 2 is a three-dimensional structure diagram of the glass-sealed diode with the round nail supporting block of the present invention.
Fig. 3 is a front view of the glass-sealed diode with the round nail supporting block of the present invention.
Fig. 4 is a cross-sectional view taken along the plane a-a in fig. 3.
Fig. 5 is a schematic structural diagram of the first electrode in embodiment 1.
Fig. 6 is a schematic structural view of a first electrode in embodiment 2.
The reference signs are: the chip comprises a glass shell 1, a chip 2, a first electrode 3, a first conductive column 31, a first side plate 32, a second electrode 4, a second conductive column 41, a second side plate 42, a round nail supporting block 5, a traditional diode 6 and a crack 7.
Detailed Description
The present invention will be described in further detail with reference to the following examples and drawings, but the present invention is not limited thereto.
Example 1
See FIGS. 2-5 for: a glass sealed diode with round nail supporting blocks comprises a glass shell 1, a chip 2, a first electrode 3 and a second electrode 4 which are connected to two ends of the chip 2, wherein the first electrode 3 comprises a first conductive column 31 connected with the chip 2 and a first side plate 32 connected to one end of the first conductive column 31, the second electrode 4 comprises a second conductive column 41 connected with the chip 2 and a second side plate 42 connected to one end of the second conductive column 41, the glass shell 1 is sleeved outside the first conductive column 31, the chip 2 and the second conductive column 41, 3 round nail supporting blocks 5 are arranged on the first side plate 32 and the second side plate 42 close to one end face of the chip 2, each three round nail supporting blocks 5 are distributed at the edges of the first conductive column 31 and the second conductive column 41 in a regular triangle structure, in the sintering process after assembly, the glass shell 1 is heated and softened, a main body covers the first conductive column 31, the chip 2 and the second conductive column 41 to form a sealing body, the two ends of the glass shell 1 are only combined with the positions of the round nail supporting blocks 5 by utilizing the supporting function of the round nail supporting blocks 5 after the subsequent glass shell 1 is solidified, the combination area is small, the generated cracks can be almost ignored, and the overall sealing performance of the product is strong after the product is manufactured by the subsequent procedures of gap filling, surface electroplating and tinning and the like.
Preferably, the chip 2 includes a P region and an N region, the P region is connected to the first electrode 3, the N region is connected to the second electrode 4, and the structural principle of the chip 2 is as follows: a part of semiconductor silicon or germanium is doped with trace trivalent element boron to form a P region, the other part of semiconductor silicon or germanium is doped with trace pentavalent element phosphorus to form an N region, and a PN junction is formed at the junction of the P region and the N region.
Preferably, the first side plate 32 and the second side plate 42 are both cylindrical structures.
Preferably, the middle of the glass housing 1 is provided with a through hole matched with the first conductive pillar 31 and the second conductive pillar 41.
Preferably, the height of the round nail supporting block 5 along the central axis direction of the first conductive post 31 is H, and H is greater than or equal to 0.5mm and less than or equal to 2 mm.
Example 2
See fig. 2, 3, 4, 6: a glass sealed diode with round nail supporting blocks comprises a glass shell 1, a chip 2, a first electrode 3 and a second electrode 4 which are connected to two ends of the chip 2, wherein the first electrode 3 comprises a first conductive column 31 connected with the chip 2 and a first side plate 32 connected to one end of the first conductive column 31, the second electrode 4 comprises a second conductive column 41 connected with the chip 2 and a second side plate 42 connected to one end of the second conductive column 41, the glass shell 1 is sleeved outside the first conductive column 31, the chip 2 and the second conductive column 41, 4 round nail supporting blocks 5 are arranged on the first side plate 32 and the second side plate 42 close to one end face of the chip 2, every four round nail supporting blocks 5 are distributed at the edges of the first conductive column 31 and the second conductive column 41 in a square structure, in the sintering process after assembly, the glass shell 1 is heated and softened, a main body covers the first conductive column 31, the chip 2 and the second conductive column 41 to form one round nail supporting block, the two ends of the glass shell 1 are only combined with the positions of the round nail supporting blocks 5 by utilizing the supporting function of the round nail supporting blocks 5 after the subsequent glass shell 1 is solidified, the combination area is small, the generated cracks can be almost ignored, and the overall sealing performance of the product is strong after the product is manufactured by the subsequent procedures of gap filling, surface electroplating and tinning and the like.
Preferably, the chip 2 includes a P region and an N region, the P region is connected to the first electrode 3, the N region is connected to the second electrode 4, and the structural principle of the chip 2 is as follows: a part of semiconductor silicon or germanium is doped with trace trivalent element boron to form a P region, the other part of semiconductor silicon or germanium is doped with trace pentavalent element phosphorus to form an N region, and a PN junction is formed at the junction of the P region and the N region.
Preferably, the first side plate 32 and the second side plate 42 are both cylindrical structures.
Preferably, the middle of the glass housing 1 is provided with a through hole matched with the first conductive pillar 31 and the second conductive pillar 41.
Preferably, the height of the round nail supporting block 5 along the central axis direction of the first conductive post 31 is H, and H is greater than or equal to 0.5mm and less than or equal to 2 mm.
The above examples only represent 2 embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (6)
1. The glass-sealed diode with the round nail supporting blocks is characterized by comprising a glass shell (1), a chip (2), a first electrode (3) and a second electrode (4), wherein the first electrode (3) and the second electrode (4) are connected to two ends of the chip (2), the first electrode (3) comprises a first conductive column (31) connected with the chip (2) and a first side plate (32) connected to one end of the first conductive column (31), the second electrode (4) comprises a second conductive column (41) connected with the chip (2) and a second side plate (42) connected to one end of the second conductive column (41), the glass shell (1) is sleeved on the outer sides of the first conductive column (31), the chip (2) and the second conductive column (41), the first side plate (32) and the second side plate (42) are provided with n round nail supporting blocks (5) close to one end face of the chip (2), n is an integer and is more than or equal to 3 and less than or equal to 6, and the round nail supporting blocks (5) are uniformly distributed on the edges of the first conductive columns (31) and the second conductive columns (41).
2. The glass-sealed diode with the circular nail supporting block as claimed in claim 1, wherein the chip (2) comprises a P region and an N region, the P region is connected with the first electrode (3), and the N region is connected with the second electrode (4).
3. The glass-sealed diode with the round nail support block as claimed in claim 1, wherein the first side plate (32) and the second side plate (42) are both cylindrical structures.
4. The glass-sealed diode with the round nail support block as claimed in claim 1, wherein a through hole matched with the first conductive column (31) and the second conductive column (41) is formed in the middle of the glass housing (1).
5. The glass-sealed diode with the round nail supporting block as claimed in claim 1, wherein the height of the round nail supporting block (5) along the central axis direction of the first conductive pillar (31) is H, and H is more than or equal to 0.5mm and less than or equal to 2 mm.
6. The glass-sealed diode with the round nail supporting block as claimed in claim 1, wherein n is 3, and every three round nail supporting blocks (5) are distributed at the edges of the first conductive pillar (31) and the second conductive pillar (41) in a regular triangle structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020826044.0U CN211879365U (en) | 2020-05-18 | 2020-05-18 | Glass-sealed diode with round nail supporting block |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020826044.0U CN211879365U (en) | 2020-05-18 | 2020-05-18 | Glass-sealed diode with round nail supporting block |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211879365U true CN211879365U (en) | 2020-11-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020826044.0U Active CN211879365U (en) | 2020-05-18 | 2020-05-18 | Glass-sealed diode with round nail supporting block |
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| Country | Link |
|---|---|
| CN (1) | CN211879365U (en) |
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2020
- 2020-05-18 CN CN202020826044.0U patent/CN211879365U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230425 Address after: No. 9, Yinpingxu Lane, Liaobu Town, Dongguan City, Guangdong Province, 523000 Patentee after: Dongguan Taifeng Radio Frequency Identification Co.,Ltd. Address before: 523430 Room 101, building 1, 76 Baiye Road, Liaobu Town, Dongguan City, Guangdong Province Patentee before: DONGGUAN ZHONGZHI ELECTRONIC TECHNOLOGY CO.,LTD. |
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| TR01 | Transfer of patent right |