CN211859143U - Deep ultraviolet wavelength laser emission device - Google Patents
Deep ultraviolet wavelength laser emission device Download PDFInfo
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- CN211859143U CN211859143U CN202020880357.4U CN202020880357U CN211859143U CN 211859143 U CN211859143 U CN 211859143U CN 202020880357 U CN202020880357 U CN 202020880357U CN 211859143 U CN211859143 U CN 211859143U
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Abstract
The invention discloses a deep ultraviolet wavelength laser emission device, which comprises a 808nm semiconductor laser; 808nm focusing lens; nd: YVO4A laser crystal; a plane mirror; LBO frequency doubling; a plano-concave mirror A; a CLBO frequency doubling crystal; a plano-concave mirror B; 228.5nm filter. The 808nm laser emitted by the 808nm semiconductor laser focuses the 808nm laser to Nd: YVO through a 808nm focusing lens4In the laser crystal, Nd is YVO4The laser crystal emits 914nm laser through 808nm laser pumping; 914nm laser is reflected by a plane mirror, and then is frequency-doubled by an LBO frequency doubling crystal to generate 457nm laser; the 457nm laser is reflected by a plano-concave mirror A, sequentially passes through an LBO frequency doubling crystal and a plane mirror, and is subjected to frequency doubling by a CLBO frequency doubling crystal to generate a laser with a new wavelength of 228.5 nm; the new wavelength 228.5nm laser passes through the output mirror planoconcave mirror B, and finally emits the new wavelength 228.5nm deep ultraviolet laser through the 228.5nm optical filter.
Description
Technical Field
The invention relates to the technical field of deep ultraviolet all-solid-state laser, in particular to a deep ultraviolet wavelength laser emitting device.
Background
Deep ultraviolet laser is an important laser application field that is being developed at present. The development of deep ultraviolet laser can greatly promote the development of high-tech fields such as photoetching technology, laser precision processing, various photoelectron spectrometers, laser Raman spectrometers and advanced instrument manufacturing industry. The ultraviolet laser comprises a gas ultraviolet laser, a solid ultraviolet laser and a semiconductor laser diode, which are divided according to the form of the laser gain medium. Common gas ultraviolet lasers include excimer lasers, ion lasers, helium-cadmium lasers, metal vapor ultraviolet lasers. The common solid ultraviolet laser comprises a krypton lamp pumped ultraviolet laser, a xenon lamp pumped ultraviolet laser and a laser diode pumped solid ultraviolet laser. Excimer lasers have the advantage of high average power, but their range of use is limited due to their poor beam quality, narrow band range, difficulty in tuning, inability to study ultrafast processes, and mostly toxic gases. The traditional flash lamp pumped ultraviolet laser also compels people to search for new pumping sources due to some defects such as high equipment operation cost, short service life, large occupied area and the like. Due to the rapid development of laser diodes, the rapid development of laser diode pumped solid-state lasers is driven. Meanwhile, due to the appearance of some novel nonlinear crystals and the maturity of a laser frequency conversion technology, the ultraviolet laser output technology of the all-solid-state ultraviolet laser is more and more mature. The all-solid-state ultraviolet laser has the characteristics of good beam quality and tunability, and the spatial resolution is very high due to the short ultraviolet wavelength, so that the all-solid-state ultraviolet laser is very widely applied.
Disclosure of Invention
The invention aims to provide a deep ultraviolet wavelength laser emitting device.
A deep ultraviolet wavelength laser emission device comprises a 808nm semiconductor laser; 808nm focusing lens; nd: YVO4A laser crystal; a plane mirror; LBO frequency doubling; a plano-concave mirror A; frequency doubling crystal CLBO; a plano-concave mirror B; 228.5nm filter.
The method is characterized in that:
the 808nm semiconductor laser has an output wavelength range of 808 +/-3 nm and continuous output minimum power of 5W.
808nm focusing lens with 181.7nm TiO plated on front and back surfaces2/96.7nm SiO2/156.9 nm TiO2/94.1nm SiO2The optical film of (1). The transmittance at 808nm is more than 99 percent.
Nd-YVO 4 laser crystal, the front surface of which is coated with 108.1nm TiO2/144.9nm SiO2/29.8nm TiO2/280.7nm SiO2/260.8nm TiO2/232.1nm SiO2/62.1nm TiO2/157.2nm SiO2/101.5nm TiO2/156.2nm SiO2/97.7nm TiO2/477.3nm SiO2/105.7nm TiO2/165.3nm SiO2/90.8nm TiO2/96.8nm SiO2/92.8nm TiO2/267.2nm SiO2/256.4nm TiO2The optical film realizes that the reflectivity at 914nm is more than 99 percent, the transmittances at 808nm, 1064nm and 1342nm are more than 95 percent, and the rear surface is plated with 31.4nm SiO2/51.9nm TiO2/206.8nm SiO2The optical film realizes that the transmittance at 914nm is more than 99 percent, and the transmittances at 1064nm and 1342nm are more than 95 percent.
A plane mirror with 84.8nm TiO coated front surface2/133.1nm SiO2/91.4nm TiO2/146.5nm SiO2/94.8nm TiO2/133.1nm SiO2/77.1nm TiO2/149.9nm SiO2/104.5nm TiO2/190.4nm SiO2/93.9nm TiO2/180.2nm SiO2/90.4nm TiO2/131.5nm SiO2/78.3nm TiO2/147.9nm SiO2/120.6nm TiO2/88.8nm SiO2/91.1nm TiO2The optical film realizes that the reflectivity at 914nm is more than 99 percent when the incident angle is 10 degrees, the transmittances at 457nm, 1064nm and 1342nm are more than 99 percent, and the back surface is plated with 18.4nm HfO2/46.5nm MgF2/29.6nm HfO2/44.6nm MgF2/29.4nm HfO2/41.8nm MgF2/25.3nm HfO2/47.3nm MgF2/32.1nmHfO2/34.1nm MgF2/38.3nm HfO2/20.1nm MgF2/43.9nm HfO2/44.1nm MgF2/14.2nm HfO2/61.6nm MgF2/15.4nm HfO2/70.8nm MgF2/13.6nm HfO2The optical film of (1) can realize an optical film having a reflectance at 228.5nm of more than 95% and a transmittance at 457nm of more than 99% at an incident angle of 10 °.
LBO frequency doubling crystal with front and back surfaces coated with 149.1nm SiO2/112.7nm TiO2/16.1nm SiO2/47.8nmTiO2/75.3nm SiO2The optical film of (2) realizes a transmittance of more than 99% at 457nm and 914 nm.
Plano-concave mirror A, the concave surface of which is coated with 66.6nm TiO2/200.9nm SiO2/66.4nm TiO2/200.9nm SiO2/67.5nm TiO2/42.8nm SiO2/26.1nm TiO2/107.2nm SiO2/124.1nm TiO2/107.4nm SiO2/123.8nm TiO2/107.5nm SiO2/123.7nm TiO2/107.6nm SiO2/123.6nm TiO2/107.9nm SiO2/123.5nm TiO2/108.5nm SiO2/123.2nm TiO2The reflectivity at 457nm and 914nm is more than 99%, and the plane is not plated with an optical film.
Front and back surfaces of CLBO frequency doubling crystal are coated with 112.6nm HfO2/73.7nm MgF2/13.5nm HfO2/126.1nmMgF2The optical film of (1) realizes an optical film having a transmittance of more than 99% at 228.5nm and 457 nm.
A plano-concave mirror B with a concave surface coated with 56.2nm HfO2/68.8nm MgF2/62.5nm HfO2/82.7nm MgF2/56.6nm HfO2/86.7nm MgF2/55.3nm HfO2/87.5nm MgF2/57.4nm HfO2/85nm MgF2/60.4nmHfO2/79nm MgF2/74.1nm HfO2/45.3nm MgF2/78.2nm HfO2/20.1nm MgF2/85.8nm HfO2/103.1nm MgF2/40.1nm HfO2/112.8nm MgF2/63.9nm HfO2The optical film realizes that the reflectivity at 457nm is more than 99 percent, the transmittance at 228.5nm is more than 95 percent, and the plane is plated with 46.9nm HfO2/34.1nm MgF2The optical film of (2) realizes a transmittance at 228.5nm of more than 99%.
The 228.5nm optical filter has a center wavelength of 228.5nm +/-5 nm, a peak transmittance of more than 30% and a cut-off band of 350nm to 1150 nm.
Drawings
FIG. 1 is a diagram of an apparatus according to an embodiment of the present invention.
Detailed Description
The present invention is described in further detail below with reference to fig. 1.
The invention discloses a deep ultraviolet wavelength laser emission device, which comprises a 1-808 nm semiconductor laser, a 2-808 nm focusing lens and a 3-Nd-YVO4Laser crystal, 4-plane mirror, 5-LBO frequency doubling crystal, 6-plano-concave mirror A, 7-CLBO frequency doubling crystal, 8-plano-concave mirror B and 9-228.5 nm filter.
Collecting 808nm laser output by 1-808 nm semiconductor laser to 3-Nd: YVO through 2-808 nm focusing lens4In the laser crystal, 3-Nd: YVO4The laser crystal generates 914nm laser by pumping of 808nm laser.
YVO from 3-Nd4914nm laser from the laser crystal is incident on a 4-plane mirror at 10 degrees for reflection, and the 914nm laser is subjected to frequency multiplication through a 5-LBO frequency multiplication crystal after being reflected to generate 457nm laser.
The 457nm laser is reflected by a 6-plano-concave mirror A, and then is emitted into a 7-CLBO frequency doubling crystal for frequency doubling through a 5-LBO frequency doubling crystal and a 4-plane mirror, so that the deep ultraviolet laser with the wavelength of 228.5nm is generated.
The 228.5nm laser passes through an output mirror 8-a plano-concave mirror B and finally passes through a 9-228.5 nm optical filter, so that the output of the 228.5nm laser with the deep ultraviolet wavelength is realized.
Claims (1)
1. A deep ultraviolet wavelength laser transmitter, comprising: 808nm semiconductor laser; 808nm focusing lens; nd: YVO4A laser crystal; a plane mirror; LBO frequency doubling; a plano-concave mirror A; a CLBO frequency doubling crystal; a plano-concave mirror B; a 228.5nm filter; the 808nm laser emitted by the conductor laser focuses the 808nm laser to Nd: YVO through a 808nm focusing lens4In the laser crystal, Nd is YVO4The laser crystal emits 914nm laser through 808nm laser pumping; 914nm laser is reflected by a plane mirror, and then is frequency-doubled by an LBO frequency doubling crystal to generate 457nm laser; the 457nm laser is reflected by a plano-concave mirror A, sequentially passes through an LBO frequency doubling crystal and a plane mirror, and is subjected to frequency doubling by a CLBO frequency doubling crystal to generate a laser with a new wavelength of 228.5 nm; the new wavelength 228.5nm laser passes through the output mirror planoconcave mirror B, and finally emits the new wavelength 228.5nm deep ultraviolet laser through the 228.5nm optical filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020880357.4U CN211859143U (en) | 2020-05-23 | 2020-05-23 | Deep ultraviolet wavelength laser emission device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020880357.4U CN211859143U (en) | 2020-05-23 | 2020-05-23 | Deep ultraviolet wavelength laser emission device |
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| Publication Number | Publication Date |
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| CN211859143U true CN211859143U (en) | 2020-11-03 |
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| CN202020880357.4U Active CN211859143U (en) | 2020-05-23 | 2020-05-23 | Deep ultraviolet wavelength laser emission device |
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- 2020-05-23 CN CN202020880357.4U patent/CN211859143U/en active Active
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