CN211848109U - Mask plate for sputtering process - Google Patents
Mask plate for sputtering process Download PDFInfo
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- CN211848109U CN211848109U CN202020460658.1U CN202020460658U CN211848109U CN 211848109 U CN211848109 U CN 211848109U CN 202020460658 U CN202020460658 U CN 202020460658U CN 211848109 U CN211848109 U CN 211848109U
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- mask plate
- substrate
- temperature
- resistant mask
- sputtering process
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The utility model discloses a mask plate for sputtering process, which belongs to the technical field of sputtering process, and comprises a substrate, wherein the upper end surface of the substrate is provided with a high-temperature-resistant mask plate, the upper end surface of the high-temperature-resistant mask plate is provided with a resistance layer, and a hollow graphic structure is carved in the plane area of the high-temperature-resistant mask plate; the resistance layer is sputtered by the film magnetron sputtering machine, so that sputtered resistance metal particles are deposited on the substrate at the bottom through the hollow pattern of the high-temperature-resistant mask plate, and then the high-temperature-resistant mask plate is removed, thereby achieving the effect of directly appearing the resistance pattern on the substrate.
Description
Technical Field
The utility model relates to a sputtering technology technical field, in particular to a mask plate for sputtering technology.
Background
In the whole process of semiconductor manufacturing, one part is a process from layout to wafer (wafer) manufacturing, namely photomask or reticle (mask) manufacturing, and the part is a key part of process connection; the photomask is mainly divided into two components, namely a substrate and a light-tight material, the photomask substrate is an ideal photosensitive blank for manufacturing a fine photomask graph, a required photomask can be obtained through a photoetching plate making process, and in short, the photomask substrate becomes the photomask after being etched with the mask graph.
In the sputtering process, a resistance layer is generally sputtered on a substrate, a conductor layer is sputtered on the resistance layer, and a protective layer is added on the conductor layer, so that patterns need to be etched on the substrate.
SUMMERY OF THE UTILITY MODEL
The utility model provides a mask plate for sputtering technology aims at solving the numerous and complicated and lower problem of efficiency of current mask plate etching process.
The utility model discloses a realize like this, a mask plate for sputtering technology, which comprises a substrate, the up end of base plate is provided with high temperature resistant mask plate, the up end of high temperature resistant mask plate is provided with the resistance layer, be carved with fretwork graphic structure in the plane region of high temperature resistant mask plate.
In a preferred embodiment of the present invention, the substrate is made of a glass plate having a polyimide on a surface thereof.
In a preferred embodiment of the present invention, the resistance layer is made of tantalum nitride.
As the preferred scheme of the utility model, the material of high temperature resistant board is polyimide.
As the preferred scheme of the utility model, high temperature resistant mask plate is the removable setting.
As a preferred embodiment of the present invention, the high temperature resistant mask plate deposits sputtered resistive metal particles on the substrate through the hollow pattern structure.
As a preferred embodiment of the present invention, the resistor pattern is directly formed on the substrate.
Compared with the prior art, the beneficial effects of the utility model are that:
1. sputtering a high-temperature-resistant mask plate with a pattern at the top end of a substrate by a thin film magnetron sputtering machine, depositing sputtered metal on the substrate at the bottom through a hollow pattern of the high-temperature-resistant mask plate, and removing the high-temperature-resistant mask plate, so that the effect of directly generating a resistance pattern on the substrate is achieved, when an etching electroplating process is carried out at a later stage, an etching solution is not required to be replaced for etching a bottom resistance film layer, so that the etching process is reduced, and the effects of simplifying steps and improving the etching efficiency are achieved;
2. the polyimide is arranged on the surface of the glass plate, so that the surface of the substrate has a thin film liquid crystal tube structure, and the substrate has the advantages of fine and vivid images, light weight, low power consumption and good environmental protection performance;
3. the resistance layer is made of tantalum nitride and has the characteristics of high melting point (3090 ℃), small resistance temperature coefficient and high stability.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
fig. 2 is a schematic view of the overall cross section of the present invention.
In the figure: 1. a substrate; 2. a high-temperature mask layer; 3. a resistive layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it is to be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are merely for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. In addition, in the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
Referring to fig. 1-2, the present invention provides a technical solution: a mask plate for a sputtering process comprises a substrate 1;
a high-temperature-resistant mask plate 2 is arranged on the upper end surface of the substrate 1;
the upper end face of the high-temperature-resistant mask plate 2 is provided with a resistance layer 3;
a hollow pattern structure is engraved in the plane area of the high-temperature-resistant mask plate 2.
As a technical optimization scheme of the present invention, the high temperature resistant mask 2 deposits the sputtered resistive metal particles on the substrate 1 through its hollowed pattern structure.
As a technical optimization scheme of the present invention, the resistance pattern is directly presented on the substrate 1.
As a technical optimization scheme of the present invention, the substrate 1 is a glass plate with polyimide on the surface.
In this embodiment: the polyimide is arranged on the surface of the glass plate, so that the surface of the substrate 1 is provided with a thin film liquid crystal tube structure, and the substrate 1 has the advantages of fine and vivid images, light weight, low power consumption and good environmental protection performance.
As a technical optimization scheme of the present invention, the resistive layer 3 is made of tantalum nitride.
In this embodiment: tantalum nitride has the characteristics of high melting point (3090 ℃), small temperature coefficient of resistance and high stability.
As a technical optimization scheme of the utility model, the material of high temperature resistant mask plate 2 is polyimide.
In this embodiment: the polyimide is a polymer containing imide rings on the main chain, is one of organic high polymer materials with the best comprehensive performance, resists high temperature of more than 400 ℃, and further can improve the high temperature resistance of the high temperature resistant mask plate 2.
Specifically, a film magnetron sputtering machine is used for sputtering a resistance layer 3, so that sputtered resistance metal particles are deposited on a substrate 1 at the bottom through a hollow pattern of a high-temperature-resistant mask plate 2, then the high-temperature-resistant mask plate 2 is removed, the effect that the resistance pattern directly appears on the substrate 1 is achieved, when an etching electroplating process is carried out at the later stage, an etching solution is not needed to be replaced for etching a bottom resistance film layer, the etching process is reduced, and the effects of simplifying steps and improving the etching efficiency are achieved.
The above description is only exemplary of the present invention and should not be construed as limiting the present invention, and any modifications, equivalents and improvements made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (7)
1. A mask plate for sputtering technology is characterized in that: comprising a substrate (1);
a high-temperature-resistant mask plate (2) is arranged on the upper end face of the substrate (1);
a resistance layer (3) is arranged on the upper end surface of the high-temperature-resistant mask plate (2);
and hollow graphic structures are engraved in the plane area of the high-temperature-resistant mask plate (2).
2. A mask for a sputtering process according to claim 1, wherein: the substrate (1) is made of a glass plate with polyimide on the surface.
3. A mask for a sputtering process according to claim 1, wherein: the resistance layer (3) is made of tantalum nitride.
4. A mask for a sputtering process according to claim 1, wherein: the high-temperature-resistant mask plate (2) is made of polyimide.
5. A mask for a sputtering process according to claim 1, wherein: the high-temperature resistant mask plate (2) deposits sputtered resistance metal particles on the substrate (1) through the hollowed pattern structure.
6. A mask for a sputtering process according to claim 1, wherein: the high-temperature-resistant mask plate (2) is arranged in a removable manner.
7. A mask for a sputtering process according to claim 1, wherein: the substrate (1) directly presents a resistance pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020460658.1U CN211848109U (en) | 2020-04-02 | 2020-04-02 | Mask plate for sputtering process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020460658.1U CN211848109U (en) | 2020-04-02 | 2020-04-02 | Mask plate for sputtering process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211848109U true CN211848109U (en) | 2020-11-03 |
Family
ID=73144661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020460658.1U Active CN211848109U (en) | 2020-04-02 | 2020-04-02 | Mask plate for sputtering process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211848109U (en) |
-
2020
- 2020-04-02 CN CN202020460658.1U patent/CN211848109U/en active Active
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