CN211789011U - Semiconductor device with a plurality of transistors - Google Patents
Semiconductor device with a plurality of transistors Download PDFInfo
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- CN211789011U CN211789011U CN202020169605.4U CN202020169605U CN211789011U CN 211789011 U CN211789011 U CN 211789011U CN 202020169605 U CN202020169605 U CN 202020169605U CN 211789011 U CN211789011 U CN 211789011U
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Abstract
The utility model relates to a semiconductor device. The conductor device includes a semiconductor substrate, a buried word line structure, and a fin structure. The semiconductor substrate is provided with a shallow trench isolation structure and a plurality of active regions arranged in parallel; the embedded word line structure is positioned in the semiconductor substrate, extends along a first direction and spans the shallow trench isolation structures and the active region; the fin-shaped structure is located in a region where the active region and the embedded word line structure intersect, and the embedded word line structure surrounds and covers the fin-shaped structure.
Description
Technical Field
The utility model relates to a semiconductor memory device technical field especially relates to a semiconductor device.
Background
In order to increase the integration of dram to increase the operation speed of devices and meet the consumer demand for miniaturized electronic devices, embedded word line dram has been developed recently to meet the above-mentioned demands but with the increase of memory integration.
However, since the size of the device itself of the random access memory is small, the area of the active region is often affected due to process limitations, so that the control capability of the gate and the channel width are limited, which results in a higher turn-on voltage, a slower turn-on speed and a lower operating current of the semiconductor device, and further affects the performance of the device itself.
SUMMERY OF THE UTILITY MODEL
The utility model provides a semiconductor device to improve semiconductor memory device's efficiency.
The embodiment of the utility model provides a still provide a semiconductor device, include:
a semiconductor substrate having a shallow trench isolation structure and a plurality of active regions arranged in parallel;
the embedded word line structure is positioned in the semiconductor substrate, extends along a first direction and spans the shallow trench isolation structures and the active region; and
and the fin-shaped structure is positioned in the area where the active region and the embedded word line structure are intersected, and the embedded word line structure surrounds and covers the fin-shaped structure.
In one embodiment, the semiconductor substrate is an SOI substrate and includes a silicon material layer, a back substrate, and an oxide material layer sandwiched between the silicon material layer and the back substrate.
In one embodiment, the height of the embedded word line structure under the fin structure is 20-80 nm.
In one embodiment, the height of the buried word line structure above the fin structure is 10-100 nm.
In one embodiment, the embedded word line structure includes a metal conductive layer, and the metal conductive layer is insulated from the fin structure and surrounds and covers the fin structure.
In one of the embodiments, the first and second electrodes are,
the buried word line structure further includes:
the gate oxide layer is arranged on the surface, facing the metal conducting layer, of the substrate and coats the embedded word line structure; and
and the metal barrier layer is arranged between the gate oxide layer and the metal conducting layer.
In one embodiment, the metal barrier layer is made of titanium nitride.
In one embodiment, the metal conductive layer is made of aluminum, tungsten, copper or titanium-aluminum alloy.
In one embodiment, the width of the embedded word line structure is 10-25 nm.
In one embodiment, the semiconductor device further includes a second insulating layer covering the first insulating layer and the buried word line structure.
To sum up, the utility model provides a semiconductor device. The utility model discloses a semiconductor device has and is formed with fin type structure and encircles the fin type structure bury formula word line structure, because the fin type structure quilt bury formula word line structure and encircle, consequently can promote switching efficiency, reduce its threshold voltage to and improve its operating current, be favorable to promoting and refresh efficiency.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a semiconductor substrate according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a semiconductor substrate formed with a first word line trench structure according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a semiconductor substrate with a first sacrificial layer formed thereon according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a semiconductor substrate after filling the first word line trench structure in the active region according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a semiconductor substrate with a first insulating layer formed thereon according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a semiconductor substrate formed with a second word line trench structure and a fin structure according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of a semiconductor substrate with word line tunnels according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a semiconductor substrate with a buried word line structure according to an embodiment of the present invention;
fig. 10 is a schematic structural diagram of a semiconductor substrate with a second insulating layer formed thereon according to an embodiment of the present invention.
Description of the reference numerals
100 semiconductor substrate 110 silicon material layer
120 oxidation material layer 130 backing substrate
200 first sacrificial layer 300 first insulating layer
400 fin structure 500 embedded word line structure
510 gate oxide structure 520 metal barrier
530 metallic conductive layer 600 second insulating layer
STI shallow trench isolation structure AA active area
G1 first word line trench structure G2 second word line trench structure
G3 word line tunnel
Detailed Description
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention can be embodied in many different forms other than those specifically described herein, and it will be apparent to those skilled in the art that similar modifications can be made without departing from the spirit and scope of the invention, and it is therefore not to be limited to the specific embodiments disclosed below.
Referring to fig. 1, an embodiment of the present invention provides a method for manufacturing a semiconductor device, including:
step S110, providing a semiconductor substrate 100, where the semiconductor substrate 100 has a shallow trench isolation STI and a plurality of active regions AA arranged in parallel, as shown in fig. 2;
step S120, forming a first word line trench structure G1 in the semiconductor substrate 100, please refer to fig. 3;
step S130, forming a first sacrificial layer 200 at the bottom of the first word line trench structure G1, please refer to fig. 4;
step S140, filling the first word line trench structure G1 in the active area AA by using an epitaxial growth method, as shown in fig. 5;
step S150, forming a first insulating layer 300, wherein the first insulating layer 300 covers the top of the semiconductor substrate 100 and the first word line trench structure G1 in the shallow trench isolation STI, and seals the first word line trench structure G1, as shown in fig. 6;
step S160, forming a second word line trench structure G2 and a fin structure 400 in the active area AA, where a depth of the second word line trench structure G2 is smaller than a depth of the first word line trench structure G1, and a projection of the second word line trench structure G2 in the vertical direction completely overlaps with a projection of the first sacrificial layer 200 in the vertical direction, please refer to fig. 7;
step S170, removing the first sacrificial layer 200, and forming a word line tunnel G3 in the semiconductor substrate 100 to communicate with the first word line trench structure G1, as shown in fig. 8;
in step S180, the first word line trench structure G1, the second word line trench structure G2, and the word line tunnel G3 are filled to form a buried word line structure 500, and the buried word line structure 500 surrounds the fin structure 400, as shown in fig. 9.
In this embodiment, the embedded word line structure 500 is formed by first forming a first word line trench structure G1, then forming a first sacrificial layer 200 at the bottom of the first word line trench structure G1, filling the first word line trench structure G1 in the active region AA by using an epitaxial growth method, then forming the second word line trench structure G2 by etching, then forming a word line tunnel G3 by etching the first sacrificial layer 200 to communicate with the first word line trench structure G1, and finally filling a metal conductive material with low resistance, such as aluminum, tungsten, copper, or titanium-aluminum alloy, in the first word line trench structure G1, the second word line trench structure G2, and the word line tunnel G3, wherein the embedded word line structure 500 surrounds the fin-type structure 400. Since the fin structure 400 is surrounded by the embedded word line structure 500, the switching performance can be improved, the threshold voltage can be reduced, and the operating current can be increased, which is beneficial to improving the refresh performance.
In one embodiment, the semiconductor substrate 100 is an SOI (Silicon-On-Insulator) substrate, and includes a Silicon material layer 110, a back substrate 130, and an oxide material layer 120 sandwiched between the Silicon material layer 110 and the back substrate 130.
It is understood that, in the present embodiment, an SOI substrate is used, and the oxide material layer 120 may be used as an etch stop layer during the etching of the first word line trench structure G1, so as to control the depth of the first word line trench structure G1. Moreover, the oxide material layer 120 can eliminate the effect of leakage current in the substrate, thereby further improving the performance of the semiconductor device. The silicon material layer 110 may be an undoped silicon material layer 110 or a doped silicon material layer 110, and the doped silicon material layer 110 may be an N-type or P-type doped silicon material layer 110.
In one embodiment, the forming of the first word line trench structure G1 in the semiconductor substrate 100 includes:
forming a photoresist layer on the semiconductor substrate 100;
forming a target pattern matched with the first word line trench structure G1 in the photoresist layer;
etching the silicon material layer 110 by using the patterned photoresist layer as a mask layer and the oxide material layer 120 as an etching stop layer to form the first word line trench structure G1;
and removing the residual photoresist layer.
In this embodiment, a spin coating method is used to coat a layer of photoresist on the surface of the silicon material layer 110 to form the photoresist layer, and a laser is used to irradiate the photoresist layer through a mask to cause a chemical reaction of the photoresist in the exposure region; dissolving and removing the photoresist (the former is called positive photoresist and the latter is called negative photoresist) of the exposed area or the unexposed area by a developing technology, and transferring the pattern on the photomask to the photoresist layer to form a target pattern; then, etching the silicon material layer 110 by using the patterned photoresist layer as a mask layer and the oxide material layer 120 as an etching stop layer to form the first word line trench structure G1; finally, the remaining photoresist layer is removed, and the first word line trench structure G1 is formed.
In one embodiment, the width of the first word line trench structure G1 is 10-25 nm.
It is understood that the first sacrificial layer 200 is formed in the first word line trench structure G1 subsequently, and therefore the aspect ratio of the first word line trench structure G1 must be considered, and the aspect ratio of the first word line trench structure G1 must be controlled within a reasonable range to avoid premature sealing and formation of voids during filling the material forming the first sacrificial layer 200. In the embodiment, the depth of the first word line trench structure G1 is equal to the thickness of the silicon material layer 110, generally 100 to 200nm, so that the width of the first word line trench structure G1 can be set within a range of 10 to 25nm, and the aspect ratio thereof can be controlled within a range of 4 to 20, thereby preventing a void from being generated in the first sacrificial layer 200. In this embodiment, the width of the first word line trench structure G1 is preferably 21 to 23 nm.
In one embodiment, the first sacrificial layer 200 is formed of a material having an etch selectivity ratio greater than 1 with respect to the silicon material layer 110 and the oxide material layer 120.
It can be understood that when the first sacrificial layer 200 is formed by using a material having an etching selectivity ratio greater than 1 with respect to the silicon material layer 110 and the oxide material layer 120, the material forming the first sacrificial layer 200 can be quickly etched by using a dry etching method by selecting a suitable etching gas, and the silicon material layer 110 and the shallow trench isolation structure STI are etched slowly, and the silicon material layer 110 and the shallow trench isolation structure STI are hardly etched. In this embodiment, the first sacrificial layer 200 is formed of silicon nitride; other insulating materials having an etch ratio to Si and SiO greater than 1 may also be used in place of the silicon nitride.
In one embodiment, the forming of the first sacrificial layer 200 at the bottom of the first word line trench structure G1 includes:
depositing a silicon nitride material on the semiconductor substrate 100 on which the metal barrier layer is formed by using an atomic layer deposition technique to form a silicon nitride material layer 110 which fills the first word line trench structure G1 and covers the semiconductor substrate 100;
and performing back etching on the silicon nitride material layer 110, and controlling the thickness of the remaining silicon nitride material layer to be 20-80 nm to form the first sacrificial layer 200.
In this embodiment, an atomic layer deposition technique is used to deposit a silicon nitride material layer to form a silicon nitride material layer 110 filling the first word line trench structure G1 and covering the semiconductor substrate 100. Then, the silicon nitride on the top surface of the semiconductor substrate 100 is etched, and the silicon nitride in the first word line trench structure G1 is etched to a predetermined height range, so as to form the first sacrificial layer 200. In addition, the silicon nitride material layer 110 may be formed by other deposition methods, such as Chemical Vapor Deposition (CVD), low pressure CVD (lpcvd), plasma enhanced CVD (pecvd), Atomic Layer Deposition (ALD), and the like.
In one embodiment, the height H1 of the first sacrificial layer 200 is 20-80 nm.
In a specific design, the height of the first sacrificial layer 200 may be 20-80 nm. Since the thickness of the first sacrificial layer 200 determines the lowest end and the highest end of the fin structure 400, the location of the conductive trench is generally not too small to prevent voids during subsequent metal filling. Therefore, in the present embodiment, the height of the first sacrificial layer 200 is limited to 20-80 nm. Preferably, the height H1 of the first sacrificial layer 200 is 50-70 nm. Specifically, the height of the first sacrificial layer 200 may be 50nm, 55nm, 60nm, 65nm, and 70 nm.
After the first sacrificial layer 200 is formed, when the first word line trench structure G1 is filled up by using an epitaxial growth method, a single crystal silicon material is fixedly grown only on the sidewall of the silicon material layer 110, thereby achieving the purpose of filling the first word line trench structure G1 located in the active region AA. The single crystal silicon material grown at the same time may have the same characteristics as the silicon material layer 110, or may have different characteristics such as conductivity from the silicon material layer 110. Secondly, depositing a silicon oxide material at a rate of 15-20 nm/s by using a deposition process at 400-500 ℃, and sealing the first word line trench structure G1 to form the first insulating layer. Generally, the thickness of the insulating layer on the surface of the semiconductor substrate 100 is 50 to 150 nm; in this embodiment, the thickness of the insulating layer is set within a range of 50 to 150 nm. Then, the insulating layer and the semiconductor substrate 100 are etched to form a second word line trench structure G2. In this embodiment, the insulating layer and the semiconductor substrate 100 are etched by using a dry etching process, and due to a geometric effect of the sidewall of the silicon material layer 110, a silicon oxide material on the sidewall of the silicon material layer 110, which forms the STI, is not etched.
In one embodiment, the first sacrificial layer 200 is removed using a wet etching process.
In this embodiment, the first sacrificial layer 200 is made of a silicon nitride material, and since a part of the silicon nitride material is located below the fin structure 400 and cannot be etched by dry etching, the silicon nitride material is removed by using hot phosphoric acid at a temperature of 80 to 120 ℃, or by using high-temperature phosphoric acid at a temperature of 150 to 200 ℃.
In one embodiment, the filling the first word line trench structure G1, the second word line trench structure G2, and the word line tunnel G3 to form the buried word line structure 500 includes:
forming a gate oxide layer 510 on sidewalls and a bottom of the second word line trench structure G2 and sidewalls and a top of the word line tunnel G3;
forming a metal barrier layer 520 on the semiconductor substrate 100 on which the gate oxide layer 510 is formed, wherein the metal barrier layer 520 covers the gate oxide layer 510, the first insulating layer 300 and the shallow trench isolation structure STI;
filling a metal conductive material in the first word line trench structure G1, the second word line trench structure G2, and the word line tunnel G3 to form a metal conductive layer 530;
the metal barrier layer 520 and the metal conductive material in the first word line trench structure G1 and the second word line trench structure G2 are etched back to a predetermined height to form the buried word line structure 500.
In this embodiment, the embedded word line structure 500 includes a gate oxide layer 510, a metal barrier layer 520, and a metal conductive layer 530. The metal conductive layer 530 is a tungsten material layer, and may be replaced by a metal material with low resistance, such as aluminum, copper, or titanium-aluminum alloy. The metal barrier layer 520 is made of titanium nitride (TiN) material. The combination of the titanium nitride material layer and the gate oxide layer 510 is advantageous in increasing the dielectric constant, reducing the gate length, increasing the driving current, and reducing the threshold voltage, compared to the gate oxide layer 510 alone. The gate oxide layer 510 is grown using an in-situ steam growth (ISSG) technique. In addition, the gate oxide layer 510 may also be grown using atomic layer deposition or other thermal oxidation methods.
Referring to fig. 10, in one embodiment, the manufacturing method further includes:
a second insulating layer 600 is formed on the semiconductor substrate 100 on which the buried word line structure 500 is formed, and the second insulating layer 600 covers the first insulating layer 300 and the buried word line structure 500.
In this embodiment, a deposition process is employed to deposit a silicon nitride material on the semiconductor substrate 100 on which the embedded word line structure 500 is formed, fill the first word line trench structure G1 and the second word line trench structure G2, and cover the first insulating layer 300. The thickness of the second insulating layer 600 is 20 to 50nm above the first insulating layer 300; preferably, the thickness of the second insulating layer 600 is 40nm, 45nm, or 50 nm. Since the silicon nitride material has good insulating property, the second insulating layer 600 is usually made of a silicon nitride material, except for preventing leakage by increasing the thickness of the insulating layer. In addition, the second insulating layer 600 may also be made of silicon oxynitride, silicon carbide nitride, or other suitable insulating materials, but not limited thereto.
Based on the same inventive concept, the embodiment of the present invention further provides a semiconductor device, please refer to fig. 10 again, the semiconductor device includes: a semiconductor substrate 100, a buried word line structure 500, and a fin structure 400.
The semiconductor substrate 100 has a shallow trench isolation structure STI and a plurality of active regions AA arranged in parallel.
The embedded word line structure 500 is located in the semiconductor substrate 100, extends along a first direction, and spans the plurality of shallow trench isolation structures STI and the active area AA.
The fin structure 400 is located in a region where the active region AA and the embedded word line structure 500 intersect, and the embedded word line structure 500 surrounds and covers the fin structure 400.
The utility model discloses a semiconductor device has and is formed with fin type structure and encircles fin type structure 400 bury formula word line structure 500, because fin type structure 400 quilt bury formula word line structure 500 and encircle, consequently can promote switching efficiency, reduce its threshold voltage to and improve its operating current, be favorable to promoting and refresh efficiency.
In one embodiment, the semiconductor substrate 100 is an SOI (Silicon-On-Insulator) substrate, and includes a Silicon material layer 110, a back substrate 130, and an oxide material layer 120 sandwiched between the Silicon material layer 110 and the back substrate 130.
It is understood that, in the present embodiment, an SOI substrate is used, and the oxide material layer 120 may be used as an etch stop layer during the etching of the first word line trench structure G1, so as to control the depth of the first word line trench structure G1. Moreover, the oxide material layer 120 can eliminate the effect of leakage current in the substrate, thereby further improving the performance of the semiconductor device. The silicon material layer 110 may be an undoped silicon material layer 110 or a doped silicon material layer 110, and the doped silicon material layer 110 may be an N-type or P-type doped silicon material layer 110.
In one embodiment, the height of the buried word line structure 500 under the fin structure 400 is 20-80 nm.
In a specific design, the height of the first sacrificial layer 200 may be 20-80 nm. Since the thickness of the first sacrificial layer 200 determines the lowest end and the highest end of the fin structure 400, the location of the conductive trench is generally not too small to prevent voids during subsequent metal filling. Therefore, in the present embodiment, the height of the first sacrificial layer 200 is limited to 20-80 nm. Preferably, the height H1 of the first sacrificial layer 200 is 50-70 nm. Specifically, the height of the first sacrificial layer 200 may be 50nm, 55nm, 60nm, 65nm, and 70 nm.
In one embodiment, the height of the buried word line structure above the fin structure is 10-100 nm.
Generally, the depth of the formed second trench structure is 50 to 150nm, after the second trench structure is filled and etched back, the height of the etch back in the second trench structure is generally 50 to 100nm, the height range of the embedded word line structure above the fin-shaped structure is 10 to 100nm, and the specific depth is set as required. Preferably, the depth of the second trench structure formed in the silicon substrate in the specific manufacturing process is 90-110 nm, after the second trench structure is filled and etched back, the height of the etched back in the second trench structure is generally 64-75 nm, and the height of the embedded word line structure above the fin-shaped structure is 30-45 nm. Preferably, the height of the buried word line structure above the fin structure is 30nm, 35nm, 40nm and 45 nm. The position of the conductive channel can be determined by controlling the depth of the second groove structure, and the resistance value of the embedded word line structure can be adjusted by controlling the back etching height in the second groove structure.
In one embodiment, the embedded word line structure 500 includes a metal conductive layer 530, and the metal conductive layer 530 is insulated from the fin structure 400 and surrounds and covers the fin structure 400. In this embodiment, the metal conductive layer 530 is a tungsten material layer, and may be replaced by a metal material with low resistance, such as aluminum, copper, or titanium-aluminum alloy.
In one embodiment, the buried word line structure 500 further includes:
a gate oxide layer 510 disposed on a surface of the substrate facing the metal conductive layer 530, and covering the embedded word line structure 500; and
and a metal barrier layer 520 disposed between the gate oxide layer 510 and the metal conductive layer 530.
In this embodiment, the metal barrier layer 520 is made of titanium nitride (TiN). The combination of the titanium nitride material layer and the gate oxide layer 510 is advantageous in increasing the dielectric constant, reducing the gate length, increasing the driving current, and reducing the threshold voltage, compared to the gate oxide layer 510 alone. The gate oxide layer 510 is grown by an in-situ vapor growth technique. In addition, the gate oxide layer 510 may also be grown using atomic layer deposition or other thermal oxidation methods.
In one embodiment, the width of the embedded word line structure 500 is 10 to 25 nm.
It is understood that the first sacrificial layer 200 is formed in the first word line trench structure G1 subsequently, and therefore the aspect ratio of the first word line trench structure G1 must be considered, and the aspect ratio of the first word line trench structure G1 must be controlled within a reasonable range to avoid premature sealing and formation of voids during filling the material forming the first sacrificial layer 200. In the embodiment, the depth of the first word line trench structure G1 is equal to the thickness of the silicon material layer 110, generally 100 to 200nm, so that the width of the first word line trench structure G1 can be set within a range of 10 to 25nm, and the aspect ratio thereof can be controlled within a range of 4 to 20, thereby preventing a void from being generated in the first sacrificial layer 200. In this embodiment, the width of the first word line trench structure G1 is preferably 21 to 23 nm.
In one embodiment, the semiconductor device further includes a second insulating layer 600, and the second insulating layer 600 covers the first insulating layer 300 and the buried word line structure 500.
In this embodiment, the thickness of the second insulating layer 600 is 20 to 50nm above the first insulating layer 300; preferably, the thickness of the second insulating layer 600 is 40nm, 45nm, or 50 nm. Since the silicon nitride material has good insulating property, the second insulating layer 600 is usually made of a silicon nitride material, except for preventing leakage by increasing the thickness of the insulating layer. In addition, the second insulating layer 600 may also be made of silicon oxynitride, silicon carbide nitride, or other suitable insulating materials, but not limited thereto.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. A semiconductor device, comprising:
a semiconductor substrate having a shallow trench isolation structure and a plurality of active regions arranged in parallel;
the embedded word line structure is positioned in the semiconductor substrate, extends along a first direction and spans the shallow trench isolation structures and the active region; and
and the fin-shaped structure is positioned in the area where the active region and the embedded word line structure are intersected, and the embedded word line structure surrounds and covers the fin-shaped structure.
2. The semiconductor device according to claim 1, wherein the semiconductor substrate is an SOI substrate including a silicon material layer, a back substrate, and an oxide material layer interposed between the silicon material layer and the back substrate.
3. The semiconductor device of claim 1, wherein a height of the buried word line structure under the fin structure is 20-80 nm.
4. The semiconductor device of claim 1, wherein a height of the buried word line structure above the fin structure is 10-100 nm.
5. The semiconductor device of claim 1, wherein the buried word line structure comprises a metal conductive layer insulated from and surrounding the fin structure.
6. The semiconductor device according to claim 5, wherein a material for forming the metal conductive layer is aluminum, tungsten, copper, or a titanium-aluminum alloy.
7. The semiconductor device of claim 5, wherein the buried word line structure further comprises:
the gate oxide layer is arranged on the surface, facing the metal conducting layer, of the semiconductor substrate and covers the embedded word line structure; and
and the metal barrier layer is arranged between the gate oxide layer and the metal conducting layer.
8. The semiconductor device according to claim 7, wherein a material of the metal barrier layer is titanium nitride.
9. The semiconductor device of claim 1, wherein the width of the buried word line structure is 10 to 25 nm.
10. The semiconductor device of claim 1, further comprising an insulating layer covering the buried word line structure.
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| CN113270405A (en) * | 2020-02-14 | 2021-08-17 | 长鑫存储技术有限公司 | Semiconductor device and method for manufacturing the same |
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| CN113270405A (en) * | 2020-02-14 | 2021-08-17 | 长鑫存储技术有限公司 | Semiconductor device and method for manufacturing the same |
| WO2021160130A1 (en) * | 2020-02-14 | 2021-08-19 | 长鑫存储技术有限公司 | Semiconductor device and manufacturing method therefor |
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