CN211783385U - Device for measuring wafer diameter - Google Patents
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- CN211783385U CN211783385U CN202022025454.8U CN202022025454U CN211783385U CN 211783385 U CN211783385 U CN 211783385U CN 202022025454 U CN202022025454 U CN 202022025454U CN 211783385 U CN211783385 U CN 211783385U
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Abstract
The utility model discloses a device for measuring the diameter of a wafer; the apparatus may include: a base; the supporting component is arranged on the upper surface of the base; the bosses are uniformly arranged on the supporting component, each boss at least comprises two steps, and the lower step surfaces of all the bosses are positioned on the same horizontal plane and are used for bearing the wafer to be tested; the sensors are arranged in one-to-one correspondence with the bosses, wherein each sensor is arranged on the surface of the lower step of the corresponding boss, the induction signal transmitting end of each sensor points to the circle center of the wafer to be detected, and the wafer to be detected is positioned between the sensors in the radial direction; and the data processing part is connected with the sensor and is configured to acquire sensing data of the sensor and acquire the diameter of the wafer to be measured based on the sensing data.
Description
Technical Field
The utility model relates to a wafer processing technology especially relates to a measure device of wafer diameter.
Background
In the process flow of wafer processing, after slicing a barreled single crystal silicon rod, the edge of a wafer obtained by slicing needs to be subjected to rounding processing, so that the edge of the wafer can form a certain outline shape, the mechanical strength and the machinability of the wafer are improved, and the diameter of the wafer is polished to a certain size to meet the requirements of customers; therefore, after chamfering, the wafer needs to be inspected to determine whether its diameter meets the requirements of the customer specification. Furthermore, after the wafer is subjected to the polishing process, it is usually only necessary to pass through one to two processes, such as a cleaning process and an epitaxial process (if necessary), to deliver the wafer product to the customer; therefore, the polished wafer also needs to have its diameter measured to check whether it meets the customer's requirements.
In order to measure the diameter of the wafer, the conventional solution is to perform the measurement operation by a measuring person by means of a micrometer or an optical projection. However, manual measurement is not only easily interfered by human, but also the measurement result is easily affected by human factors such as quality of measurement personnel, work experience, measurement steps and the like, so that the measurement accuracy is low, the deviation is large, and time and labor are wasted. In addition, in order to improve the measurement accuracy, in the process of executing a manual measurement scheme relying on manual work, the measurement needs to be sampled for different parts of the wafer for multiple times when the diameter of the wafer is measured, which further causes the efficiency of manual measurement to be low.
SUMMERY OF THE UTILITY MODEL
In view of the above, embodiments of the present invention are directed to an apparatus for measuring a wafer diameter; the manual intervention in the process of measuring the diameter of the wafer is avoided, the influence of human factors on the measurement result is reduced, and the measurement precision, efficiency and reliability are improved; in addition, continuous measurement can be realized, so that the diameter of the wafer can be conveniently and quickly measured, and control and automatic production are facilitated.
The embodiment of the utility model provides a technical scheme is so realized:
the embodiment of the utility model provides a measure device of wafer diameter, the device includes:
a base;
the supporting component is arranged on the upper surface of the base;
the bosses are uniformly arranged on the supporting component, each boss at least comprises two steps, and the lower step surfaces of all the bosses are positioned on the same horizontal plane and are used for bearing the wafer to be tested;
the sensors are arranged in one-to-one correspondence with the bosses, wherein each sensor is arranged on the surface of the lower step of the corresponding boss, the induction signal transmitting end of each sensor points to the circle center of the wafer to be detected, and the wafer to be detected is positioned between the sensors in the radial direction;
and the data processing part is connected with the sensor and is configured to acquire sensing data of the sensor and acquire the diameter of the wafer to be measured based on the sensing data.
The embodiment of the utility model provides a device for measuring the diameter of a wafer; the diameter of the wafer to be measured is obtained by using the sensor according to the sensing data of the wafer to be measured loaded on the boss, so that the automatic measurement of the diameter of the wafer to be measured is realized, the negative influence of human factors on the measurement result is reduced, and the measurement precision, efficiency and reliability are improved.
Drawings
Fig. 1 is a schematic view illustrating an apparatus for measuring a wafer diameter according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of an apparatus for measuring a wafer diameter according to an embodiment of the present invention.
Fig. 3 is a schematic view illustrating a wafer to be tested according to an embodiment of the present invention.
Fig. 4 is a schematic diagram of a contact measurement scheme according to an embodiment of the present invention.
Fig. 5 is a schematic diagram of a non-contact measurement scheme according to an embodiment of the present invention.
Fig. 6 is a schematic diagram of a profile sensor sensing a profile edge according to an embodiment of the present invention.
Fig. 7 is a schematic structural diagram of another apparatus for measuring a wafer diameter according to an embodiment of the present invention.
Fig. 8 is a schematic view illustrating another embodiment of the present invention for supporting a wafer to be tested.
Fig. 9 is a schematic structural diagram of a gripper component according to an embodiment of the present invention.
Fig. 10 is a schematic diagram of another contact measurement scheme provided by an embodiment of the present invention.
Detailed Description
In order to illustrate embodiments of the present invention or technical solutions in the prior art more clearly, the following description will be made in conjunction with the accompanying drawings in embodiments of the present invention to describe the technical solutions in the embodiments of the present invention clearly and completely, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
Referring to fig. 1, which illustrates an apparatus 10 for measuring a wafer diameter according to an embodiment of the present invention, the apparatus 10 may include:
a base 11;
a support assembly 12 disposed on the upper surface of the base 11;
the bosses 13 are uniformly arranged on the support component 12, wherein each boss 13 at least comprises two steps, and the lower step surfaces of all the bosses 13 are positioned on the same horizontal plane and are used for bearing the wafer 2 to be tested;
the sensors 14 are arranged corresponding to the bosses 13 one to one, wherein each sensor 14 is arranged on the surface of a lower step of the corresponding boss 13, the induction signal transmitting end of each sensor 14 points to the center of the circle of the wafer 2 to be detected, and the radial direction of the wafer 2 to be detected is positioned between the sensors 14;
and the data processing part is connected with the sensor 14 and is configured to collect the induction data of the sensor 14 and obtain the diameter of the wafer to be measured based on the induction data.
Through the device 10 for measuring the diameter of the wafer shown in fig. 1, the diameter of the wafer to be measured is obtained by using the sensor 14 according to the sensing data of the wafer 2 to be measured supported on the boss 13, so that the automatic measurement of the diameter of the wafer to be measured is realized, the negative influence of human factors on the measurement result is reduced, and the measurement accuracy, efficiency and reliability are improved.
For the apparatus 10 shown in fig. 1, in some possible implementations, the supporting component thereof, as shown in fig. 2, may include: m support bars 121-1 to 121-M, and a support ring 122; correspondingly, the number of bosses 13 and sensors 14 is also M. Taking fig. 2 as an example, the embodiment of the present invention is described by taking the example that the setting support assembly may include 4 support rods 121-1, 121-2, 121-3 and 121-4 (i.e., M = 4), based on which, 4 bosses may be respectively labeled as bosses 13-1, 13-2, 13-3 and 13-4, and 4 sensors 14 may be respectively labeled as sensors 14-1, 14-2, 14-3 and 14-4. It should be understood that the above setting is only used for illustration of the technical solution, and does not limit the protection scope of the technical solution, and in the following description, other possible values of M may still be set under some appropriate circumstances, and those skilled in the art may also easily adapt the technical solution explained based on the above setting to other circumstances, and will not be described herein again. As shown in fig. 2, the 4 support bars 121-1, 121-2, 121-3 and 121-4 may be uniformly arranged on the upper surface of the base 11, the support ring 122 is arranged on the 4 support bars 121-1, 121-2, 121-3 and 121-4 and forms a horizontal plane on the upper surface of the support ring 122, the upper surface of the support ring 122 is used for arranging the boss 13, and the width of the support ring 122 corresponds to the width of the bottom surface of the boss 13. It should be noted that, based on the above-mentioned supporting assembly, a schematic diagram of the wafer 2 to be tested being placed on the boss is shown in fig. 3.
Based on the above implementation for the support assembly, in combination with the optional performance type of the sensor 14, the diameter of the wafer 2 to be measured can be measured by a contact or non-contact measurement scheme.
For a contact measurement scheme, in some examples, the sensors 14 may be arranged in pairs opposite to each other, specifically, the sensing signal transmitting ends of the sensors 14 are also arranged in pairs opposite to each other, so that the bosses 13 need to be arranged in pairs opposite to each other in addition to the uniform arrangement described above. As shown in fig. 4, the device 10 may further include a first telescopic rod 16 and a driving assembly corresponding to the bosses 13 one by one; a cavity capable of accommodating the first telescopic rod 16 is arranged in the boss 13, and the sensor 14 is arranged at one end of the first telescopic rod 16; the other end of the first telescopic rod 16 is accommodated in the cavity and connected with the driving component; under the action of the driving component, the first telescopic rod 16 can horizontally move in the cavity to drive the sensor 14 arranged at one end of the first telescopic rod 16 to be in contact with the edge of the wafer 2 to be detected;
the data processing part is configured to determine the diameter of the wafer 2 to be measured according to the sensed distance data between the oppositely arranged sensors 14 when the sensors 14 are in contact with the edge of the wafer 2 to be measured.
It should be noted that the above example illustrates the structure of the device 10 suitable for performing the measurement in a contact manner, and in detail, the sensor 14 may be a distance measurement type sensor. Since the sensors 14 need to be arranged opposite to each other, it can be known that: the number of the sensors 14 is at least 2, and the data processing part can determine the distance data as the diameter of the wafer 2 to be measured by the distance data between two sensors 14 sensed by 2 oppositely arranged sensors 14 when contacting with the wafer 2 to be measured. However, in order to improve the measurement accuracy while considering the data processing burden of the data processing portion, in the embodiment of the present invention, the number of the sensors 14 is preferably 4, such as the sensors 14-1, 14-2, 14-3 and 14-4 shown in the aforementioned fig. 2, and the above 4 sensors are uniformly and oppositely arranged two by two, so that the diameter of the wafer 2 to be measured can be obtained by averaging the measured 2 distance data.
Further, as shown in FIG. 4, the drive assembly may include a drive mechanism (not shown) and a drive source 172; the driving source 172 may be pneumatic or hydraulic, and is in contact with the first telescopic rod 16; the driving mechanism can drive the first telescopic rod 16 to horizontally reciprocate in the cavity by the transmission source 172.
For the above example, in the implementation process, with reference to fig. 2, 3 and 4, the wafer 2 to be measured may be placed on the boss 13 by a robot (not shown), at this time, the distance between the sensors 14 arranged in pairs opposite to each other is greater than the diameter of the wafer 2 to be measured, the driving mechanism drives the first telescopic rod 16 to horizontally move in the cavity toward the center of the circle of the wafer 2 to be measured through the transmission source 172 until the sensor 14 arranged on the first telescopic rod 16 contacts with the edge of the wafer 2 to be measured, at this time, the distance data between the sensors 14 arranged in pairs opposite to each other is sensed and transmitted to the data processing portion, and then the distance data sensed by the sensor 14 may be determined as the diameter of the wafer 2 to be measured; after the diameter measurement is finished, the driving mechanism drives the first telescopic rod 16 to horizontally move in the cavity in the direction back to the center of the wafer 2 to be measured through the transmission source 172 until the sensor 14 arranged on the first telescopic rod 16 is not in contact with the edge of the wafer 2 to be measured, and at the moment, the manipulator can take out the measured wafer 2 to be measured from the boss 13; and place next wafer that awaits measuring on boss 13, continue the diameter measurement process of next wafer that awaits measuring according to above explanation, above utilize the manipulator to realize the transport and the transfer of wafer 2 that awaits measuring, can be applicable to subsequent implementation mode and its example explanation equally, the embodiment of the utility model provides a do not describe to this repeatedly.
For non-contact measurement schemes, in some examples, if the sensor 14 is a distance measurement type sensor, the diameter of the wafer 2 to be measured can still be measured in a non-contact manner. Based on this, as shown in fig. 5, the distance measuring sensors are arranged in pairs opposite to each other on the connecting side surface for connecting the lower step surface and the higher step surface in the corresponding boss 13, and the distance from each distance measuring sensor to the center of the circle of the wafer 2 to be measured is greater than the radius of the wafer to be measured;
the data processing part is configured to determine the diameter of the wafer to be measured according to the distance between the edge of the wafer 2 to be measured and the distance between the edge of the wafer to be measured.
For the above example, specifically, as shown in fig. 5, the distance between each pair of the sensors 14 disposed opposite to each other and the edge of the wafer 2 to be measured is a and b, the distance between each pair of the sensors 14 disposed opposite to each other is L, and the diameter of the wafer 2 to be measured is D, at this time, based on the distance data, the formula is known as D = L-a-b, and the data processing portion may determine the diameter of the wafer to be measured based on the above formula through the distance between each pair of the sensors disposed opposite to each other and the edge of the wafer 2 to be measured and the distance between each pair of the sensors disposed opposite to each other. It can be understood that the non-contact measurement scheme described in this example can achieve non-destructive measurement, reduce damage and contamination to the edge of the wafer 2 to be measured, and improve the measurement freedom by not limiting the position of the wafer 2 to be measured on the boss 13.
For the non-contact measurement scheme, in some examples, if the sensors 14 are profile sensors, each profile sensor corresponds to a segment for measuring the profile of the wafer 2 to be measured, and the measurement segments corresponding to all the profile sensors can be combined into the whole profile of the wafer 2 to be measured; the profile sensors are arranged on the connecting side surfaces of the corresponding bosses 13 for connecting the lower step surface and the higher step surface, and the distance from each profile sensor to the circle center of the wafer 2 to be detected is greater than the radius of the wafer to be detected;
the data processing part is configured to acquire profile data of each profile sensor for measuring a corresponding measurement segment of the wafer 2 to be measured, and calculate and acquire the diameter of the wafer to be measured according to the perimeter of the wafer 2 to be measured, which is obtained by splicing all the profile data.
For the above example, specifically, the number of the profile sensors may be set according to the corresponding measurable segment lengths, and generally speaking, since the number of the profile sensors is consistent with the number of the bosses 13, and in order to stably support the wafer 2 to be measured, the number of the bosses 13 should be at least 3, and correspondingly, the number of the profile sensors should also be at least 3. Preferably, as shown in fig. 6 as an example, 4 profile sensors are provided, and the profile sensors are uniformly and oppositely arranged in pairs, at this time, each profile sensor can correspondingly measure a segment of one fourth of the edge of the wafer 2 to be measured, as shown in the range covered by the dotted line in fig. 6, the measurement segments corresponding to all the profile sensors can be spliced into the complete profile of the wafer 2 to be measured. The data processing part is used for splicing the data of the fragments obtained by measurement of each profile sensor to obtain the complete profile of the wafer 2 to be measured; then, calculating the edge perimeter of the wafer 2 to be detected according to the complete profile; then, the diameter of the wafer 2 to be measured is calculated based on the calculated edge circumference and circumference formula of the wafer 2 to be measured.
The above is a specific example and description of a scheme for measuring the diameter of the wafer 2 to be measured by using a contact type or a non-contact type based on the supporting assembly shown in fig. 2. It should be noted that, in the apparatus 10 for measuring a wafer diameter shown in fig. 1, in addition to the implementation shown in fig. 2, in other possible implementations, as shown in fig. 7, the support assembly includes: the base 123 and the gripper members corresponding to the bosses 13 one by one; it is understood that in the present implementation, the number of the gripping members is the same as that of the bosses 13 and the sensors 14, and taking fig. 7 as an example, the technical solution can be explained by taking 4 gripping members 124-1, 124-2, 124-3 and 124-4 (i.e. M = 4) as an example in the supporting assembly, and based on this, the number of the bosses 13 and the sensors 14 is 4. It should be understood that the above setting is only used for illustration of the technical solution, and does not limit the protection scope of the technical solution, and in the following description, other possible values of M may still be set under some appropriate circumstances, and those skilled in the art may also easily adapt the technical solution explained based on the above setting to other circumstances, and will not be described herein again. It should be noted that, based on the above-mentioned supporting assembly, a schematic diagram of the wafer 2 to be tested being placed on the boss is shown in fig. 8.
As shown in fig. 7 and 8, the base 123 is disposed on the upper surface of the base 11. Referring to fig. 9, the hand grip member includes: a connecting arm 1241, a second telescopic rod 1242 and a strut 1243; the connecting arms 1241 are uniformly arranged on the circumferential periphery of the top of the base 123 and extend outward along the radial direction of the base 123, and the inside of the connecting arms 1241 is of a hollow structure and has an accommodating space capable of accommodating the second telescopic rod 1242; one end of the second telescopic rod 1242 is positioned in the accommodating space and can horizontally extend and retract along the connecting arm 1241, the other end of the second telescopic rod 1242 is vertically connected with one end of the support 1243, and the other end of the support 1243 is vertically connected with one end of the boss 13; the sensors are arranged on the connecting side faces of the corresponding bosses 13 for connecting the lower step surfaces and the upper step surfaces.
In some examples, the apparatus 10 further includes a driving assembly (not shown) capable of horizontally moving the second telescopic rod 1242 in the accommodating space to drive the sensor 14 disposed on the boss 13 to contact with the edge of the wafer 2 to be tested. Specifically, the drive assembly may include a drive mechanism and a transmission source; the transmission source can be pneumatic or hydraulic, and is in contact with the second telescopic rod 1242; the driving mechanism can drive the second telescopic rod 1242 to horizontally reciprocate in the accommodating space inside the connecting arm 1241 through the transmission source.
Based on the above implementation for the support assembly, the diameter of the wafer 2 to be measured can be measured in a contact or non-contact manner, in combination with the optional performance type of the sensor 14.
In some examples, the sensors 14 are configured as ranging type sensors and the ranging type sensors are arranged opposite to each other two by two; based on this setting, a contact or contactless measurement scheme can be implemented.
For the contact measurement scheme, the distance measurement type sensor is driven by the driving assembly to contact with the edge of the wafer 2 to be measured, and at this time, as shown in fig. 10, the sensors 14 arranged in pairs in an opposite manner sense distance data therebetween as shown in the figure and transmit the distance data to the data processing part; and the data processing part is used for determining the diameter D of the wafer to be detected according to the sensed distance data between the oppositely arranged sensors corresponding to the contact between the sensors and the edge of the wafer to be detected.
For the non-contact measurement scheme, the driving assembly drives each sensor (i.e., ranging sensor) to have a distance to the center of the wafer to be measured that is greater than the radius of the wafer to be measured, so that the distance between two opposite sensors 14 is greater than the diameter of the wafer 2 to be measured. At this time, referring to fig. 5, the two opposite sensors 14 respectively measure that the distances from the edge of the wafer 2 to be measured are a and b, respectively, and the distance between the two opposite sensors 14 is L; the diameter of the wafer 2 to be measured is set to be D, and at this time, based on the above distance data, the formula is known as D = L-a-b, and the data processing portion may determine the diameter of the wafer to be measured based on the above formula by the distance between each of the oppositely-arranged ranging sensors and the edge of the wafer 2 to be measured and the distance between each of the oppositely-arranged ranging sensors.
In some examples, the sensors are configured as profile sensors, and based on the configuration, in order to implement a non-contact measurement scheme, specifically, each profile sensor corresponds to a segment for measuring the profile of the wafer to be measured, and the measurement segments corresponding to all the profile sensors can be combined into the whole profile of the wafer to be measured, and the distance from each profile sensor to the center of the wafer to be measured is greater than the radius of the wafer to be measured,
the data processing part is configured to acquire profile data of each profile sensor for measuring a corresponding measurement segment of the wafer to be measured, and calculate and acquire the diameter of the wafer to be measured according to the perimeter of the wafer to be measured, which is obtained by splicing all the profile data.
For the above example, with reference to the settings of the profile sensors in the previous implementations, the number of bosses 13 should be at least 3, and correspondingly, the number of profile sensors should also be at least 3. Referring to fig. 6, the 4 profile sensors are uniformly and oppositely arranged in pairs, and at this time, each profile sensor can correspondingly measure a segment of one fourth of the edge of the wafer 2 to be measured, as shown by the range covered by the dotted line in fig. 6, the measurement segments corresponding to all the profile sensors can be spliced into the complete profile of the wafer 2 to be measured. The data processing part is used for splicing the data of the fragments obtained by measurement of each profile sensor to obtain the complete profile of the wafer 2 to be measured; then, calculating the edge perimeter of the wafer 2 to be detected according to the complete profile; then, the diameter of the wafer 2 to be measured is calculated based on the calculated edge circumference and circumference formula of the wafer 2 to be measured.
To the implementation shown in fig. 7, in the specific implementation process, similar to the foregoing implementation, the manipulator can be used to carry out the handling and the transfer of the wafer 2 to be tested, and the embodiment of the present invention is not repeated here.
For the above-mentioned apparatus 10, the bosses 13 may be made of flexible material such as nylon, so as to reduce or avoid damage to the wafer 2 to be tested, and the data processing portion may also perform driving control on the driving components to coordinate states of the components in the apparatus 10.
By the aid of the device 10, detection efficiency and precision can be improved, the diameter of the wafer can be conveniently and quickly measured, personal errors are avoided, continuous measurement is achieved, and control and automatic production are facilitated.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (9)
1. An apparatus for measuring a diameter of a wafer, the apparatus comprising:
a base;
the supporting component is arranged on the upper surface of the base;
the bosses are uniformly arranged on the supporting component, each boss at least comprises two steps, and the lower step surfaces of all the bosses are positioned on the same horizontal plane and are used for bearing the wafer to be tested;
the sensors are arranged in one-to-one correspondence with the bosses, wherein each sensor is arranged on the surface of the lower step of the corresponding boss, the induction signal transmitting end of each sensor points to the circle center of the wafer to be detected, and the wafer to be detected is positioned between the sensors in the radial direction;
and the data processing part is connected with the sensor and is configured to acquire sensing data of the sensor and acquire the diameter of the wafer to be measured based on the sensing data.
2. The apparatus of claim 1, wherein the support assembly comprises: a plurality of support rods and rings; the support ring is arranged on the support rod and a horizontal plane is formed on the upper surface of the support ring, the upper surface of the support ring is used for arranging the boss, and the width of the support ring corresponds to the width of the bottom surface of the boss.
3. The device of claim 2, wherein the sensors are disposed opposite each other; the device also comprises first telescopic rods and driving components, wherein the first telescopic rods and the driving components correspond to the bosses one to one; a cavity capable of accommodating the first telescopic rod is arranged in the boss, and the sensor is arranged at one end of the first telescopic rod; the other end of the first telescopic rod is accommodated in the cavity and connected with the driving assembly; the driving assembly can enable the first telescopic rod to horizontally move in the cavity so as to drive the sensor arranged at one end of the first telescopic rod to be in contact with the edge of the wafer to be detected;
the data processing part is configured to determine the diameter of the wafer to be detected according to the sensed distance data between the oppositely arranged sensors when the sensors are in contact with the edge of the wafer to be detected.
4. The apparatus of claim 2, wherein if the sensors are ranging sensors, the ranging sensors are disposed opposite to each other two by two on the connecting side for connecting the lower step surface and the upper step surface in the corresponding bosses, and the distance from each ranging sensor to the center of the wafer to be measured is greater than the radius of the wafer to be measured;
the data processing part is configured to determine the diameter of the wafer to be measured according to the distance between the edge of the wafer to be measured and the distance between the edge of the wafer to be measured.
5. The apparatus of claim 2, wherein if the sensors are profile sensors, each profile sensor corresponds to a segment for measuring the profile of the wafer to be measured and the measurement segments corresponding to all the profile sensors can be combined into the whole profile of the wafer to be measured; the profile sensors are arranged on the connecting side surfaces of the corresponding bosses for connecting the lower step surface and the higher step surface, and the distance from each profile sensor to the circle center of the wafer to be detected is greater than the radius of the wafer to be detected;
the data processing part is configured to acquire profile data of each profile sensor for measuring a corresponding measurement segment of the wafer to be measured, and calculate and acquire the diameter of the wafer to be measured according to the perimeter of the wafer to be measured, which is obtained by splicing all the profile data.
6. The apparatus of claim 1, wherein the support assembly comprises: the base station and the gripper components correspond to the bosses one by one; wherein, the base station set up in the base upper surface, tongs part includes: the connecting arm, the second telescopic rod and the strut; the connecting arms are uniformly arranged on the circumferential periphery of the top of the base station and extend outwards along the radial direction of the base station, and the connecting arms are of a hollow structure and are provided with accommodating spaces capable of accommodating the second telescopic rods; one end of the second telescopic rod is positioned in the accommodating space and can horizontally stretch and move along the connecting arm, the other end of the second telescopic rod is vertically connected with one end of the support column, and the other end of the support column is vertically connected with one end of the boss; the sensors are arranged on the connecting side faces of the corresponding bosses for connecting the lower step surfaces and the higher step surfaces.
7. The apparatus of claim 6, further comprising a driving assembly, wherein the driving assembly enables the second telescopic rod to move horizontally in the accommodating space to drive the sensor disposed on the boss to contact with the edge of the wafer to be tested.
8. The device of claim 7, wherein the sensors are range-finding sensors and the range-finding sensors are arranged opposite to each other two by two;
the data processing part is configured to determine the diameter of the wafer to be detected according to the sensed distance data between the oppositely arranged sensors when the sensors are contacted with the edge of the wafer to be detected;
or when the distance from each sensor to the center of the wafer to be measured is larger than the radius of the wafer to be measured, determining the diameter of the wafer to be measured according to the distance between the edge of the wafer to be measured and the.
9. The apparatus of claim 6, wherein the sensors are profile sensors, each profile sensor corresponds to a segment for measuring the profile of the wafer to be measured, the measurement segments corresponding to all the profile sensors can be combined into the whole profile of the wafer to be measured, and the distance from each profile sensor to the center of the wafer to be measured is larger than the radius of the wafer to be measured,
the data processing part is configured to acquire profile data of each profile sensor for measuring a corresponding measurement segment of the wafer to be measured, and calculate and acquire the diameter of the wafer to be measured according to the perimeter of the wafer to be measured, which is obtained by splicing all the profile data.
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| CN202022025454.8U CN211783385U (en) | 2020-09-16 | 2020-09-16 | Device for measuring wafer diameter |
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| CN202022025454.8U CN211783385U (en) | 2020-09-16 | 2020-09-16 | Device for measuring wafer diameter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113725131A (en) * | 2021-11-02 | 2021-11-30 | 西安奕斯伟材料科技有限公司 | Wafer pretreatment device and wafer defect detection method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113725131A (en) * | 2021-11-02 | 2021-11-30 | 西安奕斯伟材料科技有限公司 | Wafer pretreatment device and wafer defect detection method |
| CN113725131B (en) * | 2021-11-02 | 2022-02-08 | 西安奕斯伟材料科技有限公司 | Wafer pretreatment device and wafer defect detection method |
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