CN211743125U - Transition voltage protection device - Google Patents

Transition voltage protection device Download PDF

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CN211743125U
CN211743125U CN201990000161.7U CN201990000161U CN211743125U CN 211743125 U CN211743125 U CN 211743125U CN 201990000161 U CN201990000161 U CN 201990000161U CN 211743125 U CN211743125 U CN 211743125U
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transient voltage
input
protection device
zener diode
breakdown
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坂井宣夫
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

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  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
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  • Semiconductor Integrated Circuits (AREA)

Abstract

The utility model provides a transition voltage protection device. The transient voltage protection devices (101A, 101B) are provided with: a transient voltage suppression element (10) in which one common terminal (Pc), a plurality of input/output terminals (P1, P2), and a 1 st terminal (T1) are directly or indirectly connected to the common terminal (Pc), wherein reverse current prevention circuits (11, 12) are connected between the 2 nd terminal (T2) of the transient voltage suppression element (10) and the plurality of input/output terminals (P1, P2), the reverse current prevention circuits having a breakdown voltage higher than that of the transient voltage suppression element (10), and the direction in which the breakdown current of the transient voltage suppression element (10) flows is set to the forward direction. With this configuration, the plurality of terminals of the transient voltage protection device are appropriately protected against the transient voltage.

Description

Transition voltage protection device
Technical Field
The present invention relates to a transient voltage protection device for protecting an electronic circuit from transient voltage caused by electrostatic discharge or the like.
Background
Patent document 1 discloses a semiconductor integrated circuit including an Electrostatic Discharge (ESD) protection circuit for protecting an electronic circuit from Electrostatic Discharge. The semiconductor integrated circuit disclosed in patent document 1 includes: a connection path connecting the external pad for inputting and outputting signals and the internal circuit, and two protection circuits connected with the connection path. The 1 st protection circuit is formed of a diode connected between the connection path and the ground line, and the 2 nd protection circuit is formed of a diode connected between the connection path and the power supply line or between the connection path and the ground line.
Patent document 1: japanese laid-open patent publication No. 2009-54851
The semiconductor integrated circuit described in patent document 1 is a circuit for protecting an internal circuit from external electrostatic discharge with respect to a single input/output terminal, but if a circuit for protecting a plurality of input terminals from a transient voltage such as electrostatic discharge is configured, the following problem occurs.
Fig. 11 is a circuit diagram of a transient voltage protection device including two input/output terminals P1 and P2 and a common terminal Pc, which is configured to explain the problem of the present invention. The transient voltage protection device includes zener diodes ZD0, ZD1, and ZD2 between input/output terminals P1 and P2 and a common terminal Pc. Generally, the input/output terminals P1 and P2 are external terminals, and the common terminal Pc is a ground terminal. The anode of zener diode ZD1 is connected to input/output terminal P1, the anode of zener diode ZD2 is connected to input/output terminal P2, the anode of zener diode ZD0 is connected to common terminal Pc, and the cathodes of zener diodes ZD1, ZD2, and ZD3 are commonly connected.
However, in a circuit in which a transient-voltage-suppressing element (TVS) such as a zener diode is connected between the plurality of input/output terminals and the common terminal, for example, when a transient voltage is applied to the input/output terminal P1 and the zener diode ZD0 breaks down, the zener diode ZD2 also breaks down. Thereby, the transition current i0 is caused to flow to the common terminal Pc, and the transition current i2 leaks to the input-output terminal P2. Therefore, the transient voltage protection for the circuit connected to the input/output terminal P2 cannot be effectively performed. Similarly, when a transient voltage is applied to the input/output terminal P2 and the zener diode ZD0 breaks down (break down), the zener diode ZD1 also breaks down. This causes a transient current to flow to the common terminal Pc and leak to the input/output terminal P1. Therefore, the transient voltage protection for the circuit connected to the input/output terminal P1 cannot be effectively performed.
SUMMERY OF THE UTILITY MODEL
Therefore, an object of the present invention is to provide a transient voltage protection device capable of appropriately protecting a plurality of terminals against a transient voltage in a circuit in which a transient voltage suppressing element is connected between a plurality of input/output terminals and a common terminal.
An example of the present invention is a transient voltage protection device including a common terminal, a plurality of input/output terminals, and a transient voltage suppression element, wherein a 1 st terminal of the transient voltage suppression element is directly or indirectly connected to the common terminal, a plurality of 2 nd terminals of the transient voltage suppression element are connected to the input/output terminals, a reverse flow prevention circuit is connected between the input/output terminals, a breakdown voltage of the reverse flow prevention circuit is higher than a breakdown voltage of the transient voltage suppression element, and the reverse flow prevention circuit sets a direction in which a breakdown current of the transient voltage suppression element flows to a forward direction.
According to the above configuration, in a state where the breakdown of the transient voltage suppressing element occurs, the transient voltage is not applied from the transient voltage protection device side to the input/output terminal to which the transient voltage is not applied from the outside by the operation of the backflow preventing circuit. Therefore, the circuits connected to the input/output terminals are protected.
The utility model relates to an among the transition voltage protection device, transition voltage protection device possesses a common terminal, a plurality of input/output terminal and transition voltage suppression component, the 1 st end of transition voltage suppression component with the common terminal is directly or indirectly connected the 2 nd end of transition voltage suppression component is with a plurality of connect the prevention circuit against current between the input/output terminal, the breakdown voltage ratio of the prevention circuit against current the breakdown voltage of transition voltage suppression component is high, the prevention circuit against current will the direction that the breakdown current of transition voltage suppression component flows is established to the forward, the prevention circuit against current includes zener diode.
The utility model relates to an among the transition voltage protection device, transition voltage protection device possesses a common terminal, a plurality of input/output terminal and transition voltage suppression component, the 1 st end of transition voltage suppression component with the common terminal is directly or indirectly connected the 2 nd end of transition voltage suppression component is with a plurality of connect the prevention circuit against current between the input/output terminal, the breakdown voltage ratio of prevention circuit against current the breakdown voltage of transition voltage suppression component is high, the prevention circuit against current will the direction that the breakdown current of transition voltage suppression component flows is established to the forward, the prevention circuit against current possess with supply the inductor of the route series connection that fault current flows.
The transient voltage suppressing element is a zener diode that breaks down in order to protect a voltage of a circuit connected to the input/output terminal.
Further, the reverse current prevention circuit includes a MOS-FET connecting a gate and a drain.
The reverse current prevention circuit includes a PN junction diode formed at a junction between the P layer and the N layer.
According to the present invention, a transient voltage protection device is obtained, and a transient voltage suppression element can be appropriately protected against a plurality of terminals in a circuit in which the transient voltage suppression element is connected between a plurality of input/output terminals and a common terminal.
Drawings
Fig. 1(a) is a circuit diagram of a transient voltage protection device 101A according to embodiment 1. Fig. 1(B) is a circuit diagram of a transient voltage protection device 101B according to embodiment 1.
Fig. 2 is a circuit diagram showing a main part of an electronic circuit to which the transient voltage protection device 101B is connected.
Fig. 3 is a cross-sectional view of a main part of a semiconductor integrated circuit in a case where the transient voltage protection device 101B is formed of a single semiconductor integrated circuit.
Fig. 4 is a circuit diagram of the transient voltage protection device 101C having three input-output terminals P1, P2, P3.
Fig. 5 is a circuit diagram of the transient voltage protection device 102 according to embodiment 2.
Fig. 6 is a circuit diagram of the transient voltage protection device 103 according to embodiment 3.
Fig. 7 is a circuit diagram of the transient voltage protection device 104 according to embodiment 4.
Fig. 8 is a circuit diagram of the transient voltage protection device 105 of the 5 th embodiment.
Fig. 9 is a circuit diagram of the transient voltage protection device 106A of embodiment 6.
Fig. 10 is a circuit diagram of another transient voltage protection device 106B according to embodiment 6.
Fig. 11 is a circuit diagram of a transient voltage protection device (comparative example) including two input/output terminals P1 and P2 and a common terminal Pc, which is configured to explain the problem of the present invention.
Detailed Description
First, several modes of the transient voltage protection device of the present invention are described.
The transient voltage protection device according to claim 1 of the present invention comprises a single common terminal, a plurality of input/output terminals, and a transient voltage suppressing element, wherein the 1 st terminal of the transient voltage suppressing element is directly or indirectly connected to the common terminal. A backflow prevention circuit is connected between the 2 nd terminal of the transient voltage suppression element and the plurality of input/output terminals, the backflow prevention circuit having a breakdown voltage higher than that of the transient voltage suppression element, and the direction in which the breakdown current of the transient voltage suppression element flows is defined as a forward direction. According to this configuration, in a state where the breakdown of the transient voltage suppressing element occurs, the transient voltage is not applied from the transient voltage protection device side to the input/output terminal to which the transient voltage is not applied from the outside by the operation of the backflow preventing circuit. Therefore, the circuits connected to the input/output terminals are protected.
In the transient voltage protection device according to claim 2, the transient voltage suppressing element is a zener diode which breaks down at a voltage to protect a circuit connected to the input/output terminal. According to this configuration, a transient voltage suppressing element that breaks down at a relatively low voltage can be provided, and transient voltage protection can be performed in an electronic device having a low power supply voltage.
In the transient voltage protection device according to claim 3 of the present invention, the reverse current prevention circuit includes a MOS-FET connecting the gate electrode and the drain electrode. According to this configuration, since the voltage drop in the forward bias state is small and the on-resistance is low, the voltage of the input/output terminal during the transient voltage protection operation is suppressed to be low.
In the transient voltage protection device according to claim 4 of the present invention, the reverse current prevention circuit includes a PN junction diode formed at a junction of the P layer and the N layer. With this configuration, the backflow prevention circuit can be configured by a simple circuit and a simple element structure, and a small-sized and low-cost transient voltage protection device can be obtained.
In the transient voltage protection device according to claim 5, the reverse current prevention circuit includes a zener diode. With this configuration, the backflow prevention circuit having a breakdown voltage higher than that of the transient voltage suppression element can be configured with a simple circuit and a simple element structure, and a small-sized and low-cost transient voltage protection device can be obtained.
In the transient voltage protection device according to claim 6, the reverse current prevention circuit further includes an inductor connected in series to a path through which the breakdown current flows. With this configuration, the high-frequency component of the breakdown current is suppressed, and the high-frequency component of the voltage applied to the input/output terminal is suppressed. Further, the upper limit of the current flowing through each element in the path of the breakdown current can be limited, and destruction of the elements can be prevented.
Hereinafter, a plurality of embodiments for carrying out the present invention will be described by way of a few specific examples with reference to the drawings. The same reference numerals are given to the same parts in the drawings. In view of ease of explanation or understanding of the points, the embodiments are shown separately for convenience of explanation, but partial replacement or combination of the structures shown in different embodiments is possible. In embodiment 2 and embodiment 2, descriptions of common matters with embodiment 1 will be omitted, and only different points will be described. In particular, the same operational effects based on the same structure are not mentioned in each embodiment in turn.
EXAMPLE 1 embodiment
Fig. 1(a) is a circuit diagram of a transient voltage protection device 101A according to embodiment 1. Fig. 1(B) is a circuit diagram of a transient voltage protection device 101B according to embodiment 1.
The transient voltage protection device 101A shown in fig. 1(a) includes: one common terminal Pc; two input/output terminals P1, P2; and a transition voltage suppressing element 10 having a 1 st terminal T1 connected directly or indirectly to the common terminal Pc. Reverse current prevention circuits 11 and 12 are connected between the 2 nd terminal T2 of the transient voltage suppression element 10 and the input/output terminals P1 and P2, respectively, and the breakdown voltages of the reverse current prevention circuits 11 and 12 are higher than the breakdown voltage of the transient voltage suppression element 10, and the direction in which the breakdown current of the transient voltage suppression element 10 flows is made to be the forward direction. In the example shown in fig. 1(a) and 1(B), the 2 nd terminal T2 of the transient voltage suppression element 10 is connected to the common connection point CN between the transient voltage suppression element 10 and the backflow prevention circuits 11 and 12.
The transient voltage suppression element 10 protects a circuit connected to the input/output terminal P1 from a transient voltage due to electrostatic discharge (hereinafter, ESD) or the like applied from the outside to the input/output terminal P1. Similarly, the transient voltage suppression element 10 protects the circuit connected to the input/output terminal P2 from a transient voltage due to ESD or the like applied from the outside to the input/output terminal P2.
Fig. 1(B) is a circuit diagram of an example in which the transient voltage suppression element 10 and the backflow prevention circuits 11 and 12 are configured by specific elements. In the transition voltage protection device 101B shown in fig. 1(B), the transition voltage suppression element 10 is formed of a zener diode ZD 0. The reverse current prevention circuit 11 is constituted by a zener diode ZD1 and a MOS-FET Q1. The reverse current prevention circuit 12 is constituted by a zener diode ZD2 and a MOS-FET Q2.
The breakdown voltage of the zener diode ZD1 is higher than the voltage applied to the input/output terminals P1 and P2 at the time of stabilization and lower than the upper limit voltage required to protect the circuits connected to the input/output terminals P1 and P2. The breakdown voltage of the zener diode ZD0 is, for example, a voltage in the range from 7V to 13V, and the breakdown voltages of the zener diodes ZD1, ZD2 are voltages in the range from 7V to 13V. As will be described later, the zener diodes ZD1, ZD2 are elements that are formed in one chip together with the zener diode ZD 0.
In fig. 1(B), MOS-FET Q1 is an N-channel MOS-FET, connecting gate G and drain D. Similarly, MOS-FETQ2 is an N-channel MOS-FET, connecting the gate G and the drain D. In the N-channel MOS-FET Q1 having the gate G and the drain D connected to each other, when a positive voltage is applied to the drain D with respect to the source S, the gate-source voltage exceeds the gate threshold voltage (Vth), and the MOS-FET Q1 is turned ON (ON). In contrast, in a state where a voltage lower than the source S of the MOS-FET Q1 is applied to the drain D or in a state where the drain-source voltage is 0, the gate-source voltage does not exceed the gate threshold voltage (Vth), and therefore the MOS-FET Q1 is turned OFF (OFF). In other words, the MOS-FET Q1 having the gate G and the drain D connected thereto functions as a diode having the drain D as an anode and the source S as a cathode. Similarly, the MOS-FET Q2 having the gate G and the drain D connected thereto also functions as a diode having the drain D as an anode and the source S as a cathode.
Fig. 2 is a circuit diagram showing a main part of an electronic circuit to which the transition voltage protection device 101B is connected. In this example, a transient voltage protection device 101B is connected between the signal input/output line of the 1 st electronic circuit 51 and the signal input/output line of the 2 nd electronic circuit 52 and the ground.
In fig. 1(B) and 2, for example, when a positive ESD is applied to the input/output terminal P1, a forward bias voltage is applied to the zener diode ZD 1. Further, a forward bias voltage is applied to a diode formed of a MOS-FET Q1 having a gate G and a drain D connected thereto. Therefore, the potential of the cathode of the zener diode ZD0 with respect to the anode exceeds the breakdown voltage, and the breakdown of the zener diode ZD0 occurs. Thus, the current id flows through the path of the input/output terminal P1 → the backflow prevention circuit 11 → the transient voltage suppression element 10 → the common terminal Pc. This current id is the breakdown current of the zener diode ZD 0.
As described above, the 1 st electronic circuit 51 connected to the input-output terminal P1 is protected from the ESD-based transition voltage due to the breakdown of the zener diode ZD 0. In addition, in a state where positive ESD is applied to the input/output terminal P1, a reverse bias voltage is applied to a diode formed of a MOS-FET Q2 having a gate G and a drain D connected thereto. Therefore, the zener diode ZD2 does not break down, and ESD is not applied to the input-output terminal P2. Therefore, the 2 nd electronic circuit 52 connected to the input-output terminal P2 is not affected by ESD.
In the above example, although ESD is applied to the input/output terminal P1, when ESD is applied to the input/output terminal P2, similarly, a breakdown current flows along a path of the input/output terminal P2 → the backflow preventing circuit 12 → the transient voltage suppressing element 10 → the common terminal Pc. In other words, the 2 nd electronic circuit 52 connected to the input-output terminal P2 is protected from the ESD-based transition voltage due to the breakdown of the zener diode ZD 0. In addition, the zener diode ZD1 does not break down, and ESD is not applied to the input-output terminal P1. Therefore, the 1 st electronic circuit 51 connected to the input/output terminal P1 is not affected by ESD.
Further, the diode configured by connecting the gate G and the drain D of the MOS-FET has a lower forward bias drop voltage than the PN junction diode, and is therefore suitable for protection against a lower transient voltage. Further, since the on-resistance is lower than that of the PN junction diode, the voltage of the input/output terminal during the transient voltage protection operation is suppressed to be low.
Fig. 3 is a cross-sectional view of a main part of a semiconductor integrated circuit in a case where the transient voltage protection device 101B is formed of a single semiconductor integrated circuit. In FIG. 3, P-SUB is a P-type semiconductor substrate and NWELL is an N-type well. P + is a P-type region and N + is an N-type region. OF is an oxide insulating layer.
A Zener diode is formed by an N-type well NWELL and a P-type region P + and an N-type region N + formed in the N-type well NWELL. An N-channel MOS-FET is constituted by a P-type substrate P-SUB, two N-type regions N + and an oxide insulating layer OF. Metal films corresponding to the drain electrode D and the source electrode S are formed on the surface of the N-type region N +, respectively. A metal film corresponding to the gate electrode G is formed on the surface OF the insulating oxide layer OF.
In this way, the transient voltage protection device 101B can be formed by a single semiconductor integrated circuit.
In the above-described example, the transient voltage protection device having two input/output terminals P1 and P2 is used, but the transient voltage protection device having three or more input/output terminals can be configured similarly. For example, fig. 4 is a circuit diagram of the transient voltage protection device 101C having three input-output terminals P1, P2, P3. The transient voltage protection device 101C shown in fig. 4 includes one common terminal Pc, three input/output terminals P1, P2, P3, zener diodes ZD1, ZD2, ZD3, and MOS-FETs Q1, Q2, and Q3. A1 st backflow prevention circuit is formed by a Zener diode ZD1 and a MOS-FET Q1, a 2 nd backflow prevention circuit is formed by a Zener diode ZD2 and a MOS-FET Q2, and a 3 rd backflow prevention circuit is formed by a Zener diode ZD3 and a MOS-FET Q3.
In this way, a transient voltage protection device having three or more input/output terminals can be configured by including one common terminal Pc, a plurality of input/output terminals P1, P2, P3, and a transient voltage suppression element (zener diode ZD0) having a 1 st end connected to the common terminal Pc, and by connecting a backflow prevention circuit having a breakdown voltage higher than that of the transient voltage suppression element (zener diode ZD0) and a forward direction in which a breakdown current of the transient voltage suppression element (zener diode ZD0) flows, between the 2 nd end of the transient voltage suppression element (zener diode ZD0) and the plurality of input/output terminals P1, P2, and P3.
EXAMPLE 2 EXAMPLE
Embodiment 2 shows an example of a transient voltage protection device having a configuration of a reverse current prevention circuit different from that of embodiment 1.
Fig. 5 is a circuit diagram of the transient voltage protection device 102 according to embodiment 2. The transient voltage protection device 102 shown in fig. 5 includes one common terminal Pc, two input/output terminals P1 and P2, and a zener diode ZD0 having an anode connected to the common terminal Pc. Reverse- current prevention circuits 11 and 12 are connected between the cathode of the zener diode ZD0 and the input/output terminals P1 and P2, respectively.
In the transition voltage protection device 101B shown in fig. 1(B), the MOS-FETs Q1 and Q2 constitute diodes, respectively, but in the present embodiment, PN junction diodes D1 and D2 are provided in the backflow prevention circuits 11 and 12, respectively. The other structure is as shown in embodiment 1.
According to the present embodiment, the structures of the diodes D1 and D2 are simplified, and the transient voltage protection device can be further miniaturized.
EXAMPLE 3
Embodiment 3 shows an example of a transient voltage protection device having a configuration of a reverse current prevention circuit different from that of embodiment 1.
Fig. 6 is a circuit diagram of the transient voltage protection device 103 according to embodiment 3. The transient voltage protection device 103 shown in fig. 6 includes one common terminal Pc, two input/output terminals P1 and P2, and a transient voltage suppression element 10 having a 1 st terminal connected to the common terminal Pc. Backflow prevention circuits 11 and 12 are connected between the 2 nd terminal of the transient voltage suppression element 10 and the input/output terminals P1 and P2, respectively.
In the present embodiment, the transient voltage suppression element 10 is formed of the zener diode ZD 0. The backflow prevention circuit 11 is formed by zener diodes ZD1 and ZD 21. Similarly, the backflow prevention circuit 12 is constituted by zener diodes ZD2, ZD 22. The other structure is as shown in embodiment 1.
The breakdown voltages of zener diodes ZD0, ZD1, ZD2, ZD21, ZD22 are the same.
By constituting the backflow prevention circuits 11 and 12 by zener diodes connected in multiple stages as in the present embodiment, the actual breakdown voltage of the backflow prevention circuit increases, and therefore the zener diode ZD0 breaks down first. For example, when ESD is applied to the input/output terminal P1, the breakdown current id flows through a path of the input/output terminal P1 → the zener diode ZD1 → the zener diode ZD21 → the zener diode ZD0 → the common terminal Pc. In other words, the electronic circuit connected to the input-output terminal P1 is protected from the ESD-based transition voltage due to the breakdown of the zener diode ZD 0. At this time, the zener diodes ZD22, ZD2 do not break down. Thus, ESD is not applied to the input-output terminal P2. Therefore, the electronic circuit connected to the input-output terminal P2 is further protected from ESD.
According to the present embodiment, zener diode ZD0 constituting transition voltage suppression element 10 and zener diodes ZD1, ZD2, ZD21, and ZD22 constituting backflow prevention circuits can be constituted by zener diodes having the same breakdown voltage, and therefore, can be easily manufactured in the same process without particularly adjusting the breakdown voltage.
EXAMPLE 4 embodiment
Embodiment 4 shows an example of a transient voltage protection device having a configuration of a reverse current prevention circuit different from that of embodiment 1.
Fig. 7 is a circuit diagram of the transient voltage protection device 104 according to embodiment 4. The transient voltage protection device 104 shown in fig. 7 includes one common terminal Pc, two input/output terminals P1 and P2, and a transient voltage suppression element 10 having a 1 st terminal connected to the common terminal Pc. Backflow prevention circuits 11 and 12 are connected between the 2 nd terminal of the transient voltage suppression element 10 and the input/output terminals P1 and P2, respectively.
In the present embodiment, the transient voltage suppression element 10 is formed of the zener diode ZD 0. The backflow prevention circuit 11 is formed by a zener diode ZD 31. Also, the reverse current prevention circuit 12 is constituted by a zener diode ZD 32. The other structure is as shown in embodiment 1.
Here, when VB0 represents the breakdown voltage of zener diode ZD0, VB31 represents the breakdown voltage of zener diode ZD31, and VB32 represents the breakdown voltage of zener diode ZD32, VB0 < VB31 and VB0 < VB32 are in the relationship. Breakdown voltage VB0 of zener diode ZD0 is a voltage in the range of, for example, 7V to 8V, and breakdown voltages VB31 and VB32 of zener diodes ZD31 and ZD32 are voltages in the range of, for example, 10V to 13V.
In other words, zener diodes ZD31 and ZD32 connected between the cathode of zener diode ZD0 (the 2 nd end of transition voltage suppression element 10) and input/output terminals P1 and P2 are elements whose breakdown voltage is higher than the breakdown voltage VB0 of zener diode ZD0 and whose breakdown current flowing direction of zener diode ZD0 is set to the forward direction.
According to the present embodiment, for example, when a positive ESD is applied to the input/output terminal P1, the zener diode ZD0 breaks down, thereby protecting the electronic circuit connected to the input/output terminal P1 from a transient voltage due to ESD. Since the breakdown voltage of zener diode ZD32 constituting backflow prevention circuit 12 is higher than that of zener diode ZD0 constituting transition voltage suppression element 10, zener diode ZD32 does not break down even when zener diode ZD0 breaks down, and ESD is not applied to input/output terminal P2. Therefore, the electronic circuit connected to the input-output terminal P2 is also protected from ESD. When ESD is applied to the input/output terminal P2, similarly, the electronic circuit connected to the input/output terminal P2 is protected from the ESD-based transient voltage by the breakdown of the zener diode ZD0, the zener diode ZD31 does not break down, and ESD is not applied to the input/output terminal P1. Therefore, the electronic circuit connected to the input-output terminal P1 is also protected from ESD.
EXAMPLE 5 EXAMPLE
Embodiment 5 shows an example of a transient voltage protection device having a configuration of a reverse current prevention circuit different from that of embodiment 1.
Fig. 8 is a circuit diagram of the transient voltage protection device 105 of the 5 th embodiment. The transient voltage protection device 105 shown in fig. 8 includes one common terminal Pc, two input/output terminals P1 and P2, and a transient voltage suppression element 10 having a 1 st end connected to the common terminal Pc. Backflow prevention circuits 11 and 12 are connected between the 2 nd terminal of the transient voltage suppression element 10 and the input/output terminals P1 and P2, respectively.
In the present embodiment, the transient voltage suppression element 10 is formed of the zener diode ZD 0. Further, the reverse current prevention circuit 11 is constituted by a zener diode ZD1, a MOS-FET Q1, and an inductor L1. Also, the reverse current prevention circuit 12 is constituted by a zener diode ZD2, a MOS-FET Q2, and an inductor L2. The other structure is as shown in embodiment 1.
The transient voltage protection device 105 of the present embodiment is obtained by adding inductors L1 and L2 to the transient voltage protection device 101B shown in fig. 1 (B). The inductor L1 is connected in series with a path of a breakdown current flowing from the input/output terminal P1 to the common terminal Pc. Similarly, the inductor L2 is connected in series with a path of a breakdown current flowing from the input/output terminal P2 to the common terminal Pc.
For example, when ESD is applied to the input/output terminal P1, the MOS-FET Q1 functions as a diode biased in the forward direction, and the breakdown current id flows through a path of the input/output terminal P1 → the zener diode ZD1 → the inductor L1 → the MOS-FET Q1 → the zener diode ZD0 → the common terminal Pc. At this time, the diode formed of MOS-FET Q2 in the backflow prevention circuit 12 is kept off because a reverse bias voltage is applied.
Since the inductor L1 is inserted in the current path of the breakdown current, the inductor L1 suppresses the high-frequency component of the breakdown current and suppresses the high-frequency component of the voltage applied to the input/output terminal P1. In other words, transient voltage fluctuation of the input/output terminal P1 when ESD is applied to the input/output terminal P1 and the zener diode ZD0 breaks down is suppressed. Further, the upper limit of the current flowing through each element in the path of the breakdown current is limited, and the breakdown of the elements is prevented.
The same applies to the inductor L2 in the backflow prevention circuit 12. In other words, transient voltage fluctuation of the input/output terminal P2 when ESD is applied to the input/output terminal P2 and the zener diode ZD0 breaks down is suppressed. Further, the upper limit of the current flowing through each element in the path of the breakdown current is limited, and the breakdown of the elements is prevented.
In addition, an inductor may be inserted between the 2 nd terminal T2 (cathode of the zener diode ZD0) of the transient voltage suppression element 10 and the common connection point CN. With this configuration, the inductors L1 and L2 are not required.
EXAMPLE 6 EXAMPLE
Embodiment 6 shows an example of a transient voltage protection device that protects against a bipolar transient voltage.
Fig. 9 is a circuit diagram of the transient voltage protection device 106A of embodiment 6. The transient voltage protection device 106A shown in fig. 9 includes a common terminal Pc, input/output terminals P1 and P2, and transient voltage suppression elements 10P and 10n having a 1 st terminal T1 connected to the common terminal Pc. Backflow prevention circuits 11P, 12P are connected between the 2 nd terminal of the transient voltage suppression element 10P and the input/output terminals P1, P2, respectively. Similarly, the backflow prevention circuits 11n and 12n are connected between the No. 2 terminal of the transient voltage suppression element 10n and the input/output terminals P1 and P2, respectively.
In fig. 9, a transient voltage protection circuit for a positive transient voltage is configured by the transient voltage suppressing element 10p and the backflow preventing circuits 11p and 12p, and a transient voltage protection circuit for a negative transient voltage is configured by the transient voltage suppressing element 10n and the backflow preventing circuits 11n and 12 n. The transient voltage protection circuit including the transient voltage suppressing element 10p and the backflow preventing circuits 11p and 12p has the same configuration as the transient voltage protection device shown in fig. 1 (B).
The transient voltage suppression element 10p is formed of a zener diode ZD0 p. Similarly, the transient voltage suppression element 10n is constituted by a zener diode ZD0 n. The reverse current prevention circuit 11p is configured by a zener diode ZD1p and a MOS-FET Q1p, and the reverse current prevention circuit 12p is configured by a zener diode ZD2p and a MOS-FET Q2 p. Similarly, the backflow prevention circuit 11n is configured by the zener diode ZD1n and MOS-FET Q1n, and the backflow prevention circuit 12n is configured by the zener diode ZD2n and MOS-FET Q2 n.
The positive and negative transient voltage protection circuits are configured such that the zener diodes are oriented in opposite directions to the MOS-FETs, and the other circuit configurations are the same.
For example, if a positive ESD is applied to the input/output terminal P1, a forward bias voltage is applied to the zener diode ZD 1P. Further, a forward bias voltage is applied to a diode formed of a MOS-FET Q1p having a gate G and a drain D connected thereto. Therefore, the potential of the cathode of the zener diode ZD0p with respect to the anode exceeds the breakdown voltage, so that the zener diode ZD0p breaks down. Thus, the current idp flows through the path of the input/output terminal P1 → the backflow prevention circuit 11P → the transient voltage suppression element 10P → the common terminal Pc. Thereby, the input-output terminal P1 is protected from positive ESD.
For example, when a negative ESD is applied to the input/output terminal P1, a forward bias voltage is applied to the zener diode ZD1 n. Further, a forward bias voltage is applied to a diode formed of a MOS-FET Q1n having a gate G and a drain D connected thereto. Therefore, the potential of the cathode of the zener diode ZD0n with respect to the anode exceeds the breakdown voltage, so that the zener diode ZD0n breaks down. Thus, the current idn flows through the path of the common terminal Pc → the transient voltage suppressing element 10n → the backflow preventing circuit 11n → the input/output terminal P1. Thereby, the input-output terminal P1 is protected from negative ESD.
The above example is the case where ESD is applied to the input/output terminal P1, but the same is true for both the case where positive and negative ESD is applied to the input/output terminal P2. For example, when a positive ESD is applied to the input/output terminal P2, a breakdown current flows through a path of the input/output terminal P2 → the backflow preventing circuit 12P → the transient voltage suppressing element 10P → the common terminal Pc. Thereby, the input-output terminal P2 is protected from positive ESD. For example, when a negative ESD is applied to the input/output terminal P2, a breakdown current flows through a path of the common terminal Pc → the transition voltage suppressing element 10n → the backflow preventing circuit 12n → the input/output terminal P2. Thereby, the input-output terminal P2 is protected from negative ESD.
Fig. 10 is a circuit diagram of another transient voltage protection device 106B according to this embodiment. The transient voltage protection device 106B is a device that performs transient voltage protection for the three input/output terminals P1, P2, and P3. Transient voltage protection device 106B shown in fig. 10 includes one common terminal Pc, three input/output terminals P1, P2, and P3, and zener diodes ZD0P, ZD0n, ZD31P, ZD31n, ZD32P, ZD32n, ZD33P, and ZD33 n. Zener diode ZD0p is a positive transient voltage suppression element for transient voltage protection, and zener diode ZD0n is a negative transient voltage suppression element for transient voltage protection. Zener diodes ZD31p, ZD32p, and ZD33p are elements constituting a backflow prevention circuit for positive transient voltage protection, and zener diodes ZD31n, ZD32n, and ZD33n are elements constituting a backflow prevention circuit for negative transient voltage protection.
Here, when the breakdown voltage of zener diode ZD0p is represented by VB0p, the breakdown voltage of zener diode ZD31p is represented by VB31p, the breakdown voltage of zener diode ZD32p is represented by VB32p, and the breakdown voltage of zener diode ZD33p is represented by VB33p, the following is true,
VB0p＜VB31p
VB0p＜VB32p
VB0p＜VB33p。
further, when the breakdown voltage of zener diode ZD0n is represented by VB0n, the breakdown voltage of zener diode ZD31n is represented by VB31n, the breakdown voltage of zener diode ZD32n is represented by VB32n, and the breakdown voltage of zener diode ZD33n is represented by VB33n, the following is true,
|VB0n|＜|VB31n|
|VB0n|＜|VB32n|
|VB0n|＜|VB33n|。
according to the present embodiment, for example, when a positive ESD is applied to the input/output terminal P1, the zener diode ZD0P breaks down, thereby protecting the electronic circuit connected to the input/output terminal P1 from a transient voltage due to the positive ESD. In addition, for example, when a negative ESD is applied to the input/output terminal P1, the zener diode ZD0n breaks down, thereby protecting the electronic circuit connected to the input/output terminal P1 from a transition voltage due to the negative ESD. The input-output terminals P2, P3 are likewise protected against positive and negative transition voltages.
In the above-described embodiment, the 1 st ends of the transient voltage suppression elements 10, 10p, and 10n are directly connected to the common terminal Pc, but the 1 st ends of the transient voltage suppression elements 10, 10p, and 10n may be indirectly connected to the common terminal Pc. For example, an inductor may be inserted between the 1 st end of the transient voltage suppressing elements 10, 10p, and 10n and the common terminal Pc.
The common terminal Pc may be indirectly connected to ground instead of being directly connected to ground. For example, an inductor may be inserted between the common terminal Pc and the ground. With this configuration, the high-frequency component of the breakdown current of the transient voltage suppressing element is suppressed, and the high-frequency component of the breakdown current is suppressed. This suppresses transient voltage fluctuations at the input/output terminals (P1, P2, and the like). In addition, the upper limit of the current flowing to each element in the path of the breakdown current is limited, and these elements are protected from being damaged.
Finally, the above description of the embodiments is illustrative in all respects and not restrictive. And can be appropriately modified and changed by those skilled in the art. The scope of the present invention is not shown in the above embodiments, but is shown by the scope of the present invention. The scope of the present invention includes modifications from the embodiments within a range equivalent to the scope of the present invention.
Description of reference numerals
CN … common connection point; a D … drain electrode; d1, D2 … diodes; a G … gate; id. idp, idn … breakdown current; l1, L2 … inductors; p1, P2, P3 … input-output terminals; pc … common terminal; q1, Q2 … MOS-FETs; a source of S …; end 1 of T1 …; end 2 of T2 …; ZD0, ZD1, ZD2, ZD3 … zener diodes; ZD0n, ZD1n, ZD2n … zener diodes; ZD0p, ZD1p, ZD2p … zener diodes; ZD21, ZD22 … zener diodes; ZD31, ZD32 … zener diodes; ZD31n, ZD32n, ZD33n … zener diodes; ZD31p, ZD32p, ZD33p … zener diodes; 10. 10p, 10n … transition voltage suppression elements; 11. 12 … backflow prevention circuit; 11n, 12n … backflow prevention circuits; 11p, 12p … backflow prevention circuits; 51 …, 1 st electronic circuit; 52 …, 2 nd electronic circuit; 101A, 101B, 101C … transition voltage protection devices; 102. 103, 104, 105 … transient voltage protection devices; 106A, 106B … transition voltage protection devices.

Claims (5)

1. A transient voltage protection device is characterized in that,
the transient voltage protection device comprises a common terminal, a plurality of input/output terminals, and a transient voltage suppressing element, wherein the 1 st end of the transient voltage suppressing element is directly or indirectly connected to the common terminal,
a reverse flow prevention circuit connected between the 2 nd terminal of the transient voltage suppression element and the plurality of input/output terminals, the reverse flow prevention circuit having a breakdown voltage higher than that of the transient voltage suppression element, the reverse flow prevention circuit setting a direction in which a breakdown current of the transient voltage suppression element flows as a forward direction,
the reverse current prevention circuit includes a zener diode.
2. A transient voltage protection device is characterized in that,
the transient voltage protection device comprises a common terminal, a plurality of input/output terminals, and a transient voltage suppressing element, wherein the 1 st end of the transient voltage suppressing element is directly or indirectly connected to the common terminal,
a reverse flow prevention circuit connected between the 2 nd terminal of the transient voltage suppression element and the plurality of input/output terminals, the reverse flow prevention circuit having a breakdown voltage higher than that of the transient voltage suppression element, the reverse flow prevention circuit setting a direction in which a breakdown current of the transient voltage suppression element flows as a forward direction,
the reverse current prevention circuit includes an inductor connected in series to a path through which the fault current flows.
3. The transition voltage protection device according to claim 1 or 2,
the transient voltage suppressing element is a zener diode which breaks down at a voltage to protect a circuit connected to the input/output terminal.
4. The transition voltage protection device according to claim 1 or 2,
the reverse current prevention circuit includes a MOS-FET connecting a gate and a drain.
5. The transition voltage protection device according to claim 1 or 2,
the reverse current prevention circuit includes a PN junction diode formed at a junction of the P layer and the N layer.
CN201990000161.7U 2018-09-05 2019-04-02 Transition voltage protection device Active CN211743125U (en)

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