CN211719953U - Vertical chip surface emitting laser and one-dimensional and two-dimensional arrays thereof - Google Patents
Vertical chip surface emitting laser and one-dimensional and two-dimensional arrays thereof Download PDFInfo
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- CN211719953U CN211719953U CN202020081085.1U CN202020081085U CN211719953U CN 211719953 U CN211719953 U CN 211719953U CN 202020081085 U CN202020081085 U CN 202020081085U CN 211719953 U CN211719953 U CN 211719953U
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Abstract
The utility model provides a perpendicular chip surface emitting laser, it includes: the substrate is provided with a bearing surface and a reflecting surface forming an angle of 45 degrees with the bearing surface; and an edge-emitting laser chip disposed on the bearing surface of the substrate. The edge-emitting laser chip is positioned such that an emitting end of the edge-emitting laser chip faces the reflecting surface and emits a laser beam parallel to the bearing surface, and the direction of the laser beam is perpendicular to the intersection line of the bearing surface and the reflecting surface. The utility model discloses still provide perpendicular chip surface emitting laser's one-dimensional array and two-dimensional array. The utility model discloses a set up the limit transmission laser instrument and realized the conversion of limit transmission laser instrument to perpendicular chip surface emission laser instrument on the heat dissipation substrate that has 45 degrees planes of reflection to the one-dimensional and the two-dimensional array of perpendicular surface emission laser instrument have been realized. Compared with a vertical cavity surface emitting laser, the vertical chip surface emitting laser device has the advantages of simple structure and mature manufacturing process, thereby having lower processing cost and higher product reliability.
Description
Technical Field
The utility model relates to a laser instrument technical field especially relates to a surface emitting laser and one-dimensional and two-dimensional array thereof.
Background
Edge-emitting lasers are widely used in various fields, and they emit light in a direction parallel to the surface of the substrate and perpendicular to the cleavage plane, i.e., laser light is output from the side of the laser, which tends to limit the edge-emitting lasers to one-dimensional integration. However, with the development of optical data transmission, devices capable of two-dimensional integration are required, and a surface emitting laser is an option.
The conventional surface emitting laser is basically a Vertical-cavity surface emitting laser (Vertical-cavity laser), and fig. 1 shows a typical structure of the Vertical-cavity surface emitting laser, which requires multiple Bragg mirror reflectors (DBRs) to be grown on the upper and lower surfaces of an active layer to form a Distributed Bragg Reflector (DBR). The epitaxial structure is complex, difficult to grow and low in yield of the production process. In addition, because of the presence of the specular reflective layer, the structural resistance of the VCSEL is high, which can affect the performance of the device. In addition, such a vertical structure of the vertical cavity surface emitting laser has a problem that the intrinsic cavity length is extremely short, so that the power of the vertical cavity surface emitting laser is limited. In addition, when the wavelength range of the vertical cavity surface emitting laser exceeds 1 micron, the device manufacturing process becomes difficult, and especially for the laser used for optical fiber communication, the wavelength range exceeds 1 micron, and the production and implementation by the process of the vertical cavity surface emitting laser are difficult.
Disclosure of Invention
In order to solve the problems existing in the prior art, the utility model provides a surface emitting laser device prepared by the preparation technology of the mature edge emitting laser.
To this end, in a first aspect of the present invention, there is provided a vertical chip surface emitting laser, wherein the vertical chip surface emitting laser includes:
the substrate is provided with a bearing surface and a reflecting surface forming an angle of 45 degrees with the bearing surface; and
the edge-emitting laser chip is arranged on the bearing surface of the substrate;
the edge-emitting laser chip is positioned such that an emitting end of the edge-emitting laser chip faces the reflecting surface and emits a laser beam parallel to the bearing surface, and the direction of the laser beam is perpendicular to the intersection line of the bearing surface and the reflecting surface.
In a second aspect of the present invention, there is provided a one-dimensional array of vertical chip surface emitting lasers, wherein the one-dimensional array includes:
the substrate is provided with a bearing surface and a reflecting surface forming an angle of 45 degrees with the bearing surface; and
the linear array of the edge-emitting laser chips is arranged on the bearing surface of the substrate;
the linear array of edge-emitting laser chips is positioned such that the emitting end of each edge-emitting laser chip faces the reflecting surface and emits a laser beam parallel to the bearing surface, and the direction of the laser beam is perpendicular to the intersection line of the bearing surface and the reflecting surface.
In a third aspect of the present invention, there is provided a two-dimensional array of vertical chip surface emitting lasers, wherein the two-dimensional array includes:
a substrate having a plurality of reflecting surfaces parallel to each other and a plurality of bearing surfaces spaced apart by the plurality of reflecting surfaces, the plurality of reflecting surfaces making an angle of 45 degrees with the plurality of bearing surfaces; and
a plurality of linear arrays of edge-emitting laser chips, the plurality of linear arrays being respectively arranged on one of the plurality of bearing surfaces such that the plurality of linear arrays correspond to the plurality of reflecting surfaces one-to-one;
the edge-emitting laser chips of each linear array are positioned such that the emitting ends of the edge-emitting laser chips face the reflecting surfaces corresponding to the linear array and emit laser beams parallel to the bearing surfaces of the linear array, and the directions of the laser beams are perpendicular to the intersecting lines of the bearing surfaces of the linear array and the reflecting surfaces.
The utility model discloses a perpendicular chip surface emitting laser instrument and perpendicular chip surface emitting laser instrument array advantage is, has realized the conversion of limit emitting laser instrument to perpendicular chip surface emitting laser instrument through the plane of reflection on the substrate to the two-dimensional array of perpendicular surface emitting laser instrument has been realized. Compared with a vertical cavity surface emitting laser, the vertical chip surface emitting laser device has the advantages of simple structure and mature manufacturing process, thereby having lower processing cost and higher product reliability. The high-power surface emitting laser and the array thereof can be provided by adopting a high-power edge emitting laser chip. By using edge-emitting laser chips of different wavelengths, surface-emitting laser devices of different wavelengths can be provided without being limited by the wavelength range of the vertical cavity surface-emitting laser.
Drawings
The advantages, features of the present invention will now be described in detail with reference to the accompanying drawings, in which the components are not necessarily drawn to scale, and wherein:
FIG. 1 illustrates a schematic view of a typical structure of a prior art VCSEL;
fig. 2 illustrates a schematic perspective view of one embodiment of a vertical chip surface emitting laser of the present invention;
fig. 3 illustrates a schematic perspective view of another embodiment of a vertical chip surface emitting laser of the present invention;
fig. 4 illustrates a perspective view of a heat sink substrate of an embodiment of the vertical chip surface emitting laser of the present invention;
FIG. 5 illustrates a schematic perspective view of one embodiment of a one-dimensional array of vertical chip surface emitting lasers of the present invention;
fig. 6 illustrates a schematic perspective view of one embodiment of a two-dimensional array of vertical chip surface emitting lasers of the present invention;
fig. 7 illustrates a schematic top view of one embodiment of a two-dimensional array of vertical chip surface emitting lasers of the present invention.
Detailed Description
The utility model discloses in, the various limit emission laser chip of prior art can be adopted to limit emission laser chip, for example, the limit emission laser chip of high-power limit emission laser chip, various laser wavelength. In describing the present invention, the position of the edge-emitting laser chip and the position of the substrate are determined according to the position thereof in actual use, the up-down direction, the direction, and the emitting end of the edge-emitting laser chip.
To this end, in a first aspect of the present invention, there is provided a vertical chip surface emitting laser, wherein the vertical chip surface emitting laser includes:
the substrate is provided with a bearing surface and a reflecting surface forming an angle of 45 degrees with the bearing surface; and
the edge-emitting laser chip is arranged on the bearing surface of the substrate;
the edge-emitting laser chip is positioned such that an emitting end of the edge-emitting laser chip faces the reflecting surface and emits a laser beam parallel to the bearing surface, and the direction of the laser beam is perpendicular to the intersection line of the bearing surface and the reflecting surface. With the above arrangement, the finally emitted laser beam is made perpendicular to the laser chip surface.
According to one embodiment of the invention, the reflective surface of the substrate is a gold-plated reflective mirror surface.
According to an embodiment of the invention, a conductive layer, preferably a high reflectivity, high thermal conductivity coating, more preferably a gold coating, is provided on the bearing surface. According to one embodiment, the substrate is a silicon-based heat sink.
According to an embodiment of the invention, the substrate has a back side facing away from the bearing surface and a through hole providing an electrical connection between the bearing surface and the back side, and the conductive layer is provided with a solder joint bonding with the through hole.
According to an embodiment of the present invention, the N electrode of the edge-emitting laser chip is in bonding contact with the conductive layer. According to another embodiment of the present invention, the P-electrode of the edge-emitting laser chip is in bonding contact with the conductive layer.
According to an embodiment of the present invention, the edge-emitting laser chip is an edge-emitting laser chip with a single chip power greater than 1mW, preferably an edge-emitting laser chip with a single chip power greater than 10 mW.
According to an embodiment of the present invention, the edge-emitting laser chip is an edge-emitting laser chip emitting laser light with a wavelength exceeding 1 micrometer, and preferably, the wavelength of the emitted laser light is 1.31 micrometer or 1.55 micrometer.
In a second aspect of the present invention, there is provided a one-dimensional array of vertical chip surface emitting lasers, wherein the one-dimensional array includes:
the substrate is provided with a bearing surface and a reflecting surface forming an angle of 45 degrees with the bearing surface; and
the linear array of the edge-emitting laser chips is arranged on the bearing surface of the substrate;
the linear array of edge-emitting laser chips is positioned such that the emitting end of each edge-emitting laser chip faces the reflecting surface and emits a laser beam parallel to the bearing surface, and the direction of the laser beam is perpendicular to the intersection line of the bearing surface and the reflecting surface. By the arrangement, the finally emitted one-dimensional array laser beams are perpendicular to the surface of the laser chip.
According to one embodiment of the invention, the reflective surface of the substrate is a gold-plated reflective mirror surface.
According to one embodiment of the invention, a conductive layer, preferably a plated layer, more preferably a gold plated layer, is provided on the bearing surface. According to one embodiment, the substrate is a silicon-based heat sink.
According to an embodiment of the invention, the substrate has a back side facing away from the bearing surface and one or more through holes providing electrical connection between the bearing surface and the back side, and the conductive layer is provided with solder pads bonded with the one or more through holes.
According to an embodiment of the present invention, the N electrode of the edge-emitting laser chip of the linear array is in bonding contact with the conductive layer. According to another embodiment of the present invention, the P-electrode of the linear array of edge-emitting laser chips is in bonding contact with the conductive layer.
In a third aspect of the present invention, there is provided a two-dimensional array of vertical chip surface emitting lasers, wherein the two-dimensional array includes:
a substrate having a plurality of reflecting surfaces parallel to each other and a plurality of bearing surfaces spaced apart by the plurality of reflecting surfaces, the plurality of reflecting surfaces making an angle of 45 degrees with the plurality of bearing surfaces; and
a plurality of linear arrays of edge-emitting laser chips, the plurality of linear arrays being respectively arranged on one of the plurality of bearing surfaces such that the plurality of linear arrays correspond to the plurality of reflecting surfaces one-to-one;
the edge-emitting laser chips of each linear array are positioned such that the emitting ends of the edge-emitting laser chips face the reflecting surfaces corresponding to the linear array and emit laser beams parallel to the bearing surfaces of the linear array, and the directions of the laser beams are perpendicular to the intersecting lines of the bearing surfaces of the linear array and the reflecting surfaces. With the above arrangement, the finally emitted two-dimensional array of laser beams is made perpendicular to the surface of the laser chip.
According to an embodiment of the present invention, the plurality of reflective surfaces are gold-plated reflective mirror surfaces.
According to one embodiment of the invention, a conductive layer, preferably a plated layer, more preferably a gold plated layer, is provided on the bearing surfaces. According to one embodiment, the substrate is a silicon-based heat sink.
According to an embodiment of the present invention, the substrate has a back surface facing away from the plurality of bearing surfaces and a plurality of through holes, the plurality of through holes respectively provide the plurality of bearing surfaces and electrical connection between the back surfaces, and the conductive layer on the plurality of bearing surfaces is provided with a solder joint bonded with the plurality of through holes.
According to one embodiment of the present invention, the N electrode of the edge-emitting laser chip of each linear array is in bonding contact with the conductive layer of the bearing surface of the linear array. According to another embodiment of the present invention, the P-electrode of the edge-emitting laser chip of each linear array is in bonding contact with the conductive layer of the bearing surface of the linear array.
According to an embodiment of the present invention, the plurality of reflecting surfaces and the linear array of bearing surfaces corresponding to the reflecting surfaces form a plurality of V-shaped grooves on the substrate.
The following description will be made with reference to the accompanying drawings, but the present invention is not limited to these embodiments.
Fig. 2 and fig. 3 illustrate a schematic perspective view of the vertical chip surface emitting laser of the present invention, and fig. 4 illustrates a schematic perspective view of a heat dissipation substrate of an embodiment of the vertical chip surface emitting laser of the present invention. As shown in fig. 2 and 3, the vertical chip surface emitting laser 10 includes an edge emitting laser chip 110 and a heat-dissipating substrate 120. The heat sink substrate 120 has a supporting surface 121, and a gold-plated conductive layer is deposited on the supporting surface 121. The heat sink substrate 120 is preferably a silicon-based heat sink. The edge-emitting laser chip 110 includes an N electrode 111, a P electrode 112, an oxide layer 113, a current blocking layer 114, a grating 115, and an active light-emitting layer 116. In the embodiment of fig. 2, the edge-emitting laser chip 110 is being mounted on a heat sink substrate 120. Specifically, the P-electrode 112 of the edge-emitting laser chip 110 is connected to the outside by a wire, and the N-electrode 111 of the edge-emitting laser chip 110 is bonded to the gold-plated conductive layer on the mounting surface 121 by solder 122. In the embodiment of fig. 3, the edge-emitting laser chip 110 is flip-chip mounted on a heat sink substrate 120. Specifically, the N electrode 111 of the edge-emitting laser chip 110 is connected to the outside by a wire, and the P electrode 112 of the edge-emitting laser chip 110 is bonded to the gold-plated conductive layer on the mounting surface 121 by solder 122.
As shown in fig. 2 to 4, the vertical chip surface emitting laser of the present invention is particularly advantageous in that the heat sink substrate 120 has a gold-plated reflecting surface 123 forming a 45-degree angle with the supporting surface 121, the edge-emitting laser chip 110 is positioned such that the light generated by the active light-emitting layer 116 is output from the side of the edge-emitting laser chip 110 to the gold-plated reflecting surface 123, and the edge-emitting laser chip 110 emits a laser beam parallel to the supporting surface 121 in a direction perpendicular to the intersection line of the supporting surface 121 and the reflecting surface 123, so that the laser beam emitted by the edge-emitting laser chip 110 is reflected by the gold-plated reflecting surface 123 into laser output directly above.
As shown in fig. 3 and 4, heat-dissipating substrate 120 also has a through-hole 125 that provides an electrical connection between the bearing surface 121 and the back surface of heat-dissipating substrate 120. The gold-plated conductive layer on the seating surface 121 is provided with pads 126 that bond to the vias 125, thereby providing electrical contact points for the edge-emitting laser chip 110 on the back side of the heat-dissipating substrate 120.
Fig. 5 illustrates a perspective view of one embodiment of a one-dimensional array of vertical chip surface emitting lasers of the present invention. As shown in fig. 5, the one-dimensional array of vertical chip surface emitting lasers 20 includes a linear array of edge-emitting laser chips 210 and a heat-dissipating substrate 220. The heat sink substrate 220 has a supporting surface 221, and a gold-plated conductive layer is deposited on the supporting surface 221. The linear array 210 of edge-emitting laser chips is disposed on a seating surface 221 of a heat-dissipating substrate 220. Advantageously, the heat sink substrate 220 has a gold-plated reflective surface 223 at a 45 degree angle to the support surface 221, the linear array of edge-emitting laser chips 210 being positioned such that the array of laser beams emitted by the edge-emitting laser chips is output laterally to the gold-plated reflective surface 223, and the edge-emitting laser chips emitting laser beams parallel to the support surface 221 in a direction perpendicular to the intersection of the support surface 221 and the reflective surface 223 such that the array of laser beams emitted by the linear array 210 is reflected by the gold-plated reflective surface 223 into an array of laser beams output directly above.
Fig. 6 and 7 illustrate a perspective and top view schematic of one embodiment of a two-dimensional array of vertical chip surface emitting lasers of the present invention. As shown in fig. 6 and 7, the two-dimensional array of vertical chip surface emitting lasers 30 includes a plurality of linear arrays of edge emitting laser chips 310 and a heat sink substrate 320. The heat dissipating substrate 320 has a plurality of gold-plated reflecting surfaces 323 parallel to each other and a plurality of seating surfaces 321 spaced apart by the plurality of gold-plated reflecting surfaces 323, the gold-plated reflecting surfaces 323 forming an angle of 45 degrees with the seating surfaces 321. The plurality of linear arrays 310 of edge-emitting laser chips are arranged on the respective seating surfaces 321 of the heat-dissipating substrate 320 such that the plurality of linear arrays 310 correspond one-to-one to the plurality of gold-plated reflecting surfaces 323. As shown in fig. 7, the plurality of linear arrays 310 of the edge-emitting laser chip are positioned such that the laser beam array emitted from each linear array 310 is output from the side surface to the gold-plated reflecting surface 323, and each linear array 310 emits a laser beam parallel to the supporting surface 321 of the linear array 310, and the direction of the laser beam is perpendicular to the intersection line of the supporting surface 321 and the reflecting surface 323, so that the laser beam array emitted from each linear array 310 is reflected by the corresponding gold-plated reflecting surface 323 to be output directly above.
The utility model discloses a set up the limit transmission laser instrument and realized the conversion of limit transmission laser instrument to perpendicular chip surface emission laser instrument on the heat dissipation substrate that has 45 degrees planes of reflection to the one-dimensional and the two-dimensional array of perpendicular surface emission laser instrument have been realized. Compared with a vertical cavity surface emitting laser, the vertical chip surface emitting laser device has the advantages of simple structure and mature manufacturing process, thereby having lower processing cost and higher product reliability. The high-power surface emitting laser and the array thereof can be provided by adopting a high-power edge emitting laser chip. By using edge-emitting laser chips of different wavelengths, surface-emitting laser devices of different wavelengths can be provided without being limited by the wavelength range of the vertical cavity surface-emitting laser.
While various preferred embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and changes may be made without departing from the scope of the invention as defined in the appended claims.
Claims (34)
1. A vertical chip surface emitting laser, comprising:
the substrate is provided with a bearing surface and a reflecting surface forming an angle of 45 degrees with the bearing surface; and
the edge-emitting laser chip is arranged on the bearing surface of the substrate;
the edge-emitting laser chip is positioned such that an emitting end of the edge-emitting laser chip faces the reflecting surface and emits a laser beam parallel to the bearing surface, and the direction of the laser beam is perpendicular to the intersection line of the bearing surface and the reflecting surface.
2. The vertical chip surface emitting laser according to claim 1, wherein the reflecting surface of the substrate is a gold-plated reflecting mirror surface.
3. The vertical chip surface emitting laser according to claim 1 or 2, wherein a conductive layer is provided on the bearing surface.
4. The vertical chip surface emitting laser according to claim 3, wherein said conductive layer is a gold plating layer and said substrate is a silicon-based heat sink.
5. The vertical chip surface emitting laser according to claim 3, wherein the substrate has a back surface facing away from the seating surface and a via hole providing an electrical connection between the seating surface and the back surface, and the conductive layer is provided with a pad bonded to the via hole.
6. The vertical chip surface emitting laser according to claim 3, wherein the N electrode of the edge emitting laser chip is in bonding contact with the conductive layer.
7. The vertical chip surface emitting laser according to claim 3, wherein the P electrode of the edge emitting laser chip is in bonding contact with the conductive layer.
8. The vertical chip surface emitting laser according to claim 1 or 2, wherein the edge-emitting laser chip is an edge-emitting laser chip having a single chip power of more than 1 mW.
9. The vertical chip surface emitting laser according to claim 8, wherein the edge-emitting laser chip is a single edge-emitting laser chip having a chip power of more than 10 mW.
10. The vertical chip surface emitting laser according to claim 1 or 2, wherein the edge-emitting laser chip is an edge-emitting laser chip that emits laser light having a wavelength exceeding 1 μm.
11. The vertical chip surface emitting laser of claim 10, wherein the edge-emitting laser chip is an edge-emitting laser chip that emits laser light at a wavelength of 1.31 microns or 1.55 microns.
12. A one-dimensional array of vertical chip surface emitting lasers, said one-dimensional array comprising:
the substrate is provided with a bearing surface and a reflecting surface forming an angle of 45 degrees with the bearing surface; and
the linear array of the edge-emitting laser chips is arranged on the bearing surface of the substrate;
the linear array of edge-emitting laser chips is positioned such that the emitting end of each edge-emitting laser chip faces the reflecting surface and emits a laser beam parallel to the bearing surface, and the direction of the laser beam is perpendicular to the intersection line of the bearing surface and the reflecting surface.
13. The one-dimensional array of vertical chip surface emitting lasers of claim 12, wherein said substrate's reflecting surface is a gold-plated reflecting mirror surface.
14. The one-dimensional array of vertical chip surface emitting lasers of claim 12 or 13, wherein a conductive layer is disposed on said bearing surface.
15. The one-dimensional array of vertical chip surface emitting lasers of claim 14, wherein said conductive layer is a gold plating layer and said substrate is a silicon-based heat sink.
16. The one-dimensional array of vertical chip surface emitting lasers of claim 14, wherein said substrate has a back side facing away from said seating side and one or more vias providing electrical connection between said seating side and said back side, and said conductive layer is provided with pads bonded to said one or more vias.
17. The one-dimensional array of vertical chip surface emitting lasers of claim 14, wherein the N electrodes of the edge emitting laser chips of said linear array are in bonding contact with said conductive layer.
18. The one-dimensional array of vertical chip surface emitting lasers of claim 14, wherein the P-electrodes of the edge emitting laser chips of said linear array are in bonding contact with said conductive layer.
19. The one-dimensional array of vertical chip surface emitting lasers as claimed in claim 12 or 13 wherein said edge-emitting laser chips are single edge-emitting laser chips with a chip power of greater than 1 mW.
20. The one-dimensional array of vertical chip surface emitting lasers of claim 19, wherein said edge-emitting laser chips are single edge-emitting laser chips with a chip power greater than 10 mW.
21. The one-dimensional array of vertical chip surface emitting lasers of claim 12 or 13, wherein said edge-emitting laser chips are edge-emitting laser chips that emit laser wavelengths in excess of 1 micron.
22. The one-dimensional array of vertical chip surface emitting lasers of claim 21, wherein said edge-emitting laser chips are edge-emitting laser chips emitting at a laser wavelength of 1.31 microns or 1.55 microns.
23. A two-dimensional array of vertical chip surface emitting lasers, said two-dimensional array comprising:
a substrate having a plurality of reflecting surfaces parallel to each other and a plurality of bearing surfaces spaced apart by the plurality of reflecting surfaces, the plurality of reflecting surfaces making an angle of 45 degrees with the plurality of bearing surfaces; and
a plurality of linear arrays of edge-emitting laser chips, the plurality of linear arrays being respectively arranged on one of the plurality of bearing surfaces such that the plurality of linear arrays correspond to the plurality of reflecting surfaces one-to-one;
the edge-emitting laser chips of each linear array are positioned such that the emitting ends of the edge-emitting laser chips face the reflecting surfaces corresponding to the linear array and emit laser beams parallel to the bearing surfaces of the linear array, and the directions of the laser beams are perpendicular to the intersecting lines of the bearing surfaces of the linear array and the reflecting surfaces.
24. The two-dimensional array of vertical chip surface emitting lasers of claim 23, wherein said plurality of reflecting surfaces are gold-plated reflecting mirror surfaces.
25. A two-dimensional array of vertical chip surface emitting lasers as claimed in claim 23 or 24 wherein a conductive layer is disposed on said plurality of bearing surfaces.
26. The two-dimensional array of vertical chip surface emitting lasers of claim 25, wherein said conductive layer is a gold plating layer and said substrate is a silicon-based heat sink.
27. A two-dimensional array of vertical chip surface emitting lasers as claimed in claim 25 wherein said substrate has a back side facing away from said plurality of bearing surfaces and a plurality of vias providing electrical connections between said plurality of bearing surfaces and said back side respectively, and conductive layers on said plurality of bearing surfaces are provided with pads for bonding with said plurality of vias.
28. A two-dimensional array of vertical chip surface emitting lasers as claimed in claim 25 wherein the N electrodes of each linear array of edge emitting laser chips are in bonding contact with the conductive layer of the bearing surface of the linear array.
29. A two-dimensional array of vertical chip surface emitting lasers as claimed in claim 25 wherein the P-electrode of each linear array of edge emitting laser chips is in bonding contact with the conductive layer of the bearing surface of the linear array.
30. The two-dimensional array of vertical chip surface emitting lasers of claim 23 or 24, wherein said plurality of reflecting surfaces and the bearing surface of the linear array corresponding to the reflecting surfaces form a plurality of V-shaped grooves on said substrate.
31. A two-dimensional array of vertical chip surface emitting lasers as claimed in claim 23 or 24 wherein said edge emitting laser chips are single edge emitting laser chips with a chip power greater than 1 mW.
32. A two-dimensional array of vertical chip surface emitting lasers as claimed in claim 31 wherein said edge emitting laser chips are single edge emitting laser chips with a chip power greater than 10 mW.
33. A two-dimensional array of vertical chip surface emitting lasers as claimed in claim 23 or 24 wherein said edge-emitting laser chips are edge-emitting laser chips emitting laser wavelengths in excess of 1 micron.
34. A two-dimensional array of vertical chip surface emitting lasers as claimed in claim 33 wherein said edge-emitting laser chips are edge-emitting laser chips emitting at a laser wavelength of 1.31 microns or 1.55 microns.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020081085.1U CN211719953U (en) | 2020-01-14 | 2020-01-14 | Vertical chip surface emitting laser and one-dimensional and two-dimensional arrays thereof |
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| CN202020081085.1U CN211719953U (en) | 2020-01-14 | 2020-01-14 | Vertical chip surface emitting laser and one-dimensional and two-dimensional arrays thereof |
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Address after: 101113 No. 4 East Second Street, Tongzhou Industrial Development Zone, Beijing Patentee after: Beijing Tongmei Crystal Technology Co.,Ltd. Address before: 101113 No. 4 East Second Street, Tongzhou Industrial Development Zone, Beijing Patentee before: BEIJING TONGMEI XTAL TECHNOLOGY Co.,Ltd. |
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