CN211682936U - Bonding table for horizontal gallium arsenide single crystal slicing and accurate bonding device - Google Patents
Bonding table for horizontal gallium arsenide single crystal slicing and accurate bonding device Download PDFInfo
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- CN211682936U CN211682936U CN201921565377.6U CN201921565377U CN211682936U CN 211682936 U CN211682936 U CN 211682936U CN 201921565377 U CN201921565377 U CN 201921565377U CN 211682936 U CN211682936 U CN 211682936U
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Abstract
The utility model provides a bonding platform and accurate bonding device for horizontal gallium arsenide single crystal slicing. The cross section of the bonding table is of an L-shaped structure and comprises a horizontal table and a vertical table which are connected with each other, the horizontal table surface of the horizontal table and the vertical table surface of the vertical table form an included angle of 90 degrees, and the error of the included angle is +/-0.005 degrees. This bonding platform adopts the very high L type structure of precision, and the contained angle between horizontal stand and the vertical platform ensures to be 90, simple structure and convenient operation to solve among the prior art and be used for the bonding device structure more complicated and the more loaded down with trivial details technical problem of operation before the multi-wire cutting of single crystal.
Description
Technical Field
The utility model relates to a semiconductor material equipment technical field, concretely relates to horizontal gallium arsenide single crystal section is with bonding platform and accurate bonding device.
Background
Gallium arsenide (GaAs) is the leading material in current III-V compound semiconductors and is used quite extensively. GaAs is an important microelectronic and optoelectronic base material, and is widely applied to the fields of mobile communication, optical fiber communication, automobile electronics, satellite communication, global positioning system and the like.
The horizontal gallium arsenide single crystal is sliced by a multi-wire cutting machine, the single crystal needs to be bonded on a workbench template of the multi-wire cutting machine before cutting, the gallium arsenide single crystal is fixed on the multi-wire cutting machine through the template to be sliced, slicing is completed through relative movement of the template and multiple wires, in order to guarantee accuracy of crystal orientation of a wafer, a moving plane of the multiple wires is required to be parallel to a crystal orientation reference plane of the single crystal, so that when the single crystal is fixed on the template, the crystal orientation cannot be deviated, and if the deviation occurs, the crystal orientation of the sliced wafer is different from the crystal orientation of the crystal orientation reference plane, and the crystal orientation of the wafer is unqualified.
However, the bonding device before the multi-wire cutting of the existing horizontal gallium arsenide single crystal is complex in structure, troublesome in operation and poor in wear resistance.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a horizontal gallium arsenide single crystal section is with bonding platform and accurate bonding device, this bonding platform adopt the very high L type structure of precision, and the contained angle between horizontal stand and the vertical platform ensures to be 90, simple structure and convenient operation to solve among the prior art and be used for the bonding device structure before the multi-wire saw of single crystal more complicated and operate more loaded down with trivial details technical problem.
In order to achieve the above object, according to a first aspect of the present invention, there is provided a bonding stage for horizontal gallium arsenide single crystal slicing.
The bonding table for the horizontal gallium arsenide single crystal slicing comprises a horizontal table and a vertical table which are connected with each other, wherein the horizontal table surface of the horizontal table and the vertical table surface of the vertical table form an included angle of 90 degrees, and the error of the included angle is +/-0.005 degrees.
Further, the horizontal platform and the vertical platform are both of cuboid structures, and the length of the horizontal platform is 500mm, the width of the horizontal platform is 200mm and 400mm, and the height of the horizontal platform is 20-40 mm; the length of the vertical table is 300-500mm, the width of the vertical table is 100-200mm, and the height of the vertical table is 10-30 mm.
Further, the length of the horizontal platform is 400mm, the width of the horizontal platform is 300mm, and the height of the horizontal platform is 30 mm; the length of vertical platform is 400mm, and the width is 150mm, and the height is 20 mm.
Furthermore, the bearing capacity of the horizontal platform is more than or equal to 50Kg, and the material of the horizontal platform is cast iron.
In order to achieve the above object, according to a second aspect of the present invention, there is provided an accurate bonding apparatus.
The precise bonding device comprises a light source, a template and the bonding table for the horizontal gallium arsenide single crystal slicing, wherein one side surface of the template is closely positioned with the horizontal table, the other side surface of the template is closely positioned with the vertical table, and the side surface closely positioned with the horizontal table and the other side surface closely positioned with the vertical table are adjacent side surfaces; the light source is used for providing irradiation light.
The utility model has the advantages that:
1. ensuring that the crystal orientation of the cut wafer is the same as that of the crystal orientation reference plane and the error is within 1 minute;
2. the structure is simple, the operation is convenient, and the production efficiency is improved;
3. the adhesive table has good wear resistance, can be used for a long time without maintenance, and improves the service life of the adhesive table.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a front view of a bonding table for middle-level GaAs single crystal slicing according to the present invention;
FIG. 2 is a side view of the bonding table for middle-level GaAs single crystal slicing according to the present invention;
FIG. 3 is a top view of the bonding stage for middle-level GaAs single crystal slicing according to the present invention;
FIG. 4 is a schematic diagram of the bonding of the medium level GaAs single crystal of the present invention.
In the figure:
1. a horizontal table; 2. a vertical stage; 3. a template; 4. a light source; 5. horizontal gallium arsenide single crystals; 6. graphite strips; 7. a side reference surface; 8. a crystal orientation reference plane.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The utility model discloses a horizontal gallium arsenide single crystal slice is with bonding platform, as shown in fig. 1-3, the transversal L type structure of personally submitting of this bonding platform, including interconnect's horizontal stand 1 and vertical platform 2, and the horizontal mesa of horizontal stand 1 and the vertical mesa of vertical platform 2 each other become 90 contained angles.
In the above embodiment, the bonding table for horizontal gallium arsenide single crystal slicing is mainly formed by combining the horizontal table 1 and the vertical table 2 which are connected with each other, the cross section of the bonding table is of an L-shaped structure, the structure is simple, an included angle of 90 degrees is formed between the horizontal table surface of the horizontal table 1 and the vertical table surface of the vertical table 2, and the error of the included angle is accurate to +/-0.005 degrees, so that the crystal orientation of the cut wafer can be ensured to be the same as the crystal orientation of the crystal orientation reference surface, the error of the crystal orientation is within 1 minute, and the bonding precision is high.
Further, the horizontal platform 1 and the vertical platform 2 are both rectangular structures, and the length of the horizontal platform 1 is 500mm, the width is 200mm and 400mm, and the height is 20-40 mm; the length of the vertical platform 2 is 300-500mm, the width is 100-200mm, and the height is 10-30 mm.
As a preferred embodiment, the length of the horizontal platform 1 is 400mm, the width is 300mm, and the height is 30 mm; the vertical stage 2 has a length of 400mm, a width of 150mm and a height of 20 mm.
In an embodiment of the present invention, the horizontal platform 1 and the vertical platform 2 are both rectangular structures, the length of the horizontal platform 1 is within the range of 300-; the length of the vertical table 2 is within the range of 300-500mm, the width is within the range of 100-200mm, and the height is within the range of 10-30mm, so as to ensure that the size of the horizontal gallium arsenide single crystal to be cut is adapted to the size of each part of the bonding table, although the size of each part of the bonding table can be changed correspondingly according to the size of the horizontal gallium arsenide single crystal to be cut, and is not limited specifically. As a preferred embodiment, the length of the horizontal platform 1 is 400mm, the width is 300mm, and the height is 30 mm; the vertical stage 2 has a length of 400mm, a width of 150mm and a height of 20 mm.
In one embodiment of the present invention, the load of the horizontal platform 1 is greater than or equal to 50Kg, and the material is cast iron. The horizontal platform 1 made of cast iron can ensure that the base is stable, can bear more than 50Kg, has good wear resistance, can be used for a long time without maintenance, and improves the service life of the bonding platform.
The utility model also discloses an accurate bonding device, as shown in fig. 4, the accurate bonding device comprises a light source 4, a template 3 and the bonding table for the horizontal gallium arsenide single crystal slice, wherein, one side surface of the template 3 is close to and positioned with the horizontal table 1, the other side surface of the template 3 is close to and positioned with the vertical table 2, and the side surface close to and positioned with the horizontal table 1 and the other side surface close to and positioned with the vertical table 2 are adjacent side surfaces; the light source 4 is used to provide illumination light.
In the above embodiment, the precise bonding apparatus is mainly formed by combining the light source 4, the template 3 and the bonding table for horizontal gaas single crystal slicing, the template 3 is used for bonding the horizontal gaas single crystal 5, and the auxiliary calibration needs to be performed by the bonding table for horizontal gaas single crystal slicing before bonding, specifically, one side surface of the template 3 is closely positioned to the horizontal table 1, the other side surface of the template 3 is closely positioned to the vertical table 2, and the side surface closely positioned to the horizontal table 1 and the other side surface closely positioned to the vertical table 2 are adjacent sides, then the horizontal gaas 5 is moved so that the crystal orientation reference surface 8 of the horizontal gaas single crystal 5 is the same as the slicing direction, and the light source 4 is used for providing irradiation light; bonding horizontal gallium arsenide single crystal 5 on template 3 through accurate bonding device, then placing template 3 on the workbench of multi-wire saw, finally slicing horizontal gallium arsenide single crystal 5 by using multi-wire saw.
As shown in fig. 4, the operation method of the directional sticking before the multi-wire cutting of the horizontal gallium arsenide single crystal by using the precise bonding device specifically comprises the following steps:
(1) firstly, processing a side reference surface 7 and a crystal orientation reference surface 8 of a horizontal gallium arsenide monocrystal 5;
(2) adhering a reference surface 7 on one side of a horizontal gallium arsenide monocrystal 5 to a graphite strip 6 by using glue, and air-drying the glue for later use;
(3) placing one side of a horizontal gallium arsenide monocrystal 5, which is adhered with a graphite strip 6, on a template 3, and abutting the template 3 with a horizontal table 1 and a vertical table 2 of an adhering table;
(4) taking the surface of the template 3 as a motion plane, moving the horizontal gallium arsenide single crystal 5 to enable the crystal orientation reference surface 8 of the horizontal gallium arsenide single crystal 5 to be abutted against the vertical table top of the vertical table 2, and performing strong light irradiation on the abutting part of the crystal orientation reference surface 8 of the horizontal gallium arsenide single crystal 5 and the vertical table top of the vertical table 2 by using the light source 4, wherein light cannot be seen from the other side, namely the light is qualified;
(5) the graphite strips 6 adhered with the horizontal gallium arsenide single crystals 5 are adhered to the template 3 by glue, and after the glue is dried in the air, the template 3 is placed on a multi-wire cutting machine for slicing.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention should be covered by the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (4)
1. The bonding table for the horizontal gallium arsenide single crystal slice is characterized in that the cross section of the bonding table is of an L-shaped structure and comprises a horizontal table (1) and a vertical table (2) which are connected with each other, an included angle of 90 degrees is formed between the horizontal table top of the horizontal table (1) and the vertical table top of the vertical table (2), and the error of the included angle is +/-0.005 degree;
the horizontal table (1) and the vertical table (2) are both of cuboid structures, and the horizontal table (1) is 300-500mm long, 200-400mm wide and 20-40mm high; the length of the vertical table (2) is 300-500mm, the width is 100-200mm, and the height is 10-30 mm.
2. The bonding table for horizontal gallium arsenide single crystal slices as claimed in claim 1, wherein said horizontal table (1) has length 400mm, width 300mm and height 30 mm; the length of the vertical table (2) is 400mm, the width is 150mm, and the height is 20 mm.
3. The bonding table for horizontal gallium arsenide single crystal slices as claimed in claim 1, wherein the load bearing of the horizontal table (1) is not less than 50Kg, and the material is cast iron.
4. A precise bonding apparatus, comprising a light source (4), a template (3) and the bonding stage for horizontal gaas single crystal slicing of any one of claims 1 to 3, wherein one side surface of the template (3) is closely positioned to the horizontal stage (1), the other side surface of the template (3) is closely positioned to the vertical stage (2), and one side surface closely positioned to the horizontal stage (1) and the other side surface closely positioned to the vertical stage (2) are adjacent side surfaces; the light source (4) is used for providing irradiation light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921565377.6U CN211682936U (en) | 2019-09-19 | 2019-09-19 | Bonding table for horizontal gallium arsenide single crystal slicing and accurate bonding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921565377.6U CN211682936U (en) | 2019-09-19 | 2019-09-19 | Bonding table for horizontal gallium arsenide single crystal slicing and accurate bonding device |
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| Publication Number | Publication Date |
|---|---|
| CN211682936U true CN211682936U (en) | 2020-10-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921565377.6U Active CN211682936U (en) | 2019-09-19 | 2019-09-19 | Bonding table for horizontal gallium arsenide single crystal slicing and accurate bonding device |
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| Country | Link |
|---|---|
| CN (1) | CN211682936U (en) |
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Effective date of registration: 20220415 Address after: 065201 South Youyan Technology Group Co., Ltd. No.2, Xingdu village, Yanjiao, Sanhe City, Langfang City, Hebei Province Patentee after: GRINM GUOJING ADVANCED MATERIALS Co.,Ltd. Address before: 065001 No.4 Baihe Road, Langfang Development Zone, Langfang City, Hebei Province Patentee before: GRINM ELECTRO-OPTIC MATERIALS CO.,LTD. |