CN211629269U

CN211629269U - Novel absorption type low-pass filter with symmetrical structure

Info

Publication number: CN211629269U
Application number: CN201922399908.5U
Authority: CN
Inventors: 陈相治; 杨茂雅
Original assignee: Shenzhen Wonder Electronic Technology Co ltd
Current assignee: Shenzhen Wonder Electronic Technology Co ltd
Priority date: 2019-12-27
Filing date: 2019-12-27
Publication date: 2020-10-02
Anticipated expiration: 2029-12-27

Abstract

The utility model discloses a novel symmetrical structure's absorption type low pass filter belongs to the communication technology field, adopts LTCC base plate technology to realize, including the low pass filter unit, from last first dielectric material layer M1, second dielectric material layer M2 and the third dielectric material layer M3 that sets gradually extremely down, solved the technical problem that makes the incoming signal halve to the output both ends, the utility model has the advantages of small, the precision is high, stop band signal absorbs well, can effectively reduce the crosstalk in each transmission path, has good application advantage in many electronic systems sensitive to the reflection signal.

Description

Novel absorption type low-pass filter with symmetrical structure

Technical Field

The utility model belongs to the technical field of communication, in particular to novel symmetrical structure's absorption type low pass filter.

Background

With the rapid development of the miniaturization of mobile communication, satellite communication and national defense electronic systems, high performance, low cost and miniaturization become the development direction of the microwave/radio frequency field at present, and higher requirements are put forward on the performance, size, reliability and cost of microwave devices. At present, higher requirements are put on microwave devices carried by military radars, electronic detection, electronic countermeasures and the like, and civil mobile phone communication, televisions and remote control. In these microwave devices, the filter is an important place for the rf front-end of communication and wireless systems. The filters used today are mostly reflection type filters, i.e. unwanted signals are reflected back to the input through the stop band. In many practical systems, the reflection of the signal from the reflection filter back to the input port has a certain effect on the overall system performance. Therefore, the concept of a non-reflection type filter is proposed.

SUMMERY OF THE UTILITY MODEL

The utility model aims at providing a novel symmetrical structure's absorption type low pass filter has solved the technical problem who makes the input signal halve to the output both ends.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

a novel absorption type low-pass filter with a symmetrical structure comprises a low-pass filter unit, a first dielectric material layer M1, a second dielectric material layer M2 and a third dielectric material layer M3 which are sequentially arranged from top to bottom;

the left side of the low-pass filtering unit is provided with an input port Pin, the right side of the low-pass filtering unit is provided with an output port Pout, the front side of the low-pass filtering unit is provided with a grounding port P3, and the rear side of the low-pass filtering unit is provided with a grounding port P4;

the low-pass filter unit comprises a symmetrical series resonance unit A1, a symmetrical series resonance unit A2, a symmetrical parallel resonance unit B1, a symmetrical parallel resonance unit B2 and a resistor R, wherein the resistor R is arranged in the center of the low-pass filter unit, one end of the resistor R is connected with the input port Pin, and the other end of the resistor R is connected with the output port Pout;

the rear side of the resistor R is sequentially provided with a symmetrical series resonance unit A1 and a symmetrical series resonance unit A2 from left to right, and the front side of the resistor R is sequentially provided with a symmetrical parallel resonance unit B1 and a symmetrical parallel resonance unit B2 from left to right;

the symmetrical parallel resonant cell B1 and the symmetrical parallel resonant cell B2 are both connected with a ground port P4;

the low-pass filter unit is disposed in the second dielectric material layer M2;

the resistor R is set to a resistance value by the resistor paste material.

Preferably, the symmetrical series resonant unit a1, the symmetrical series resonant unit a2, the symmetrical parallel resonant unit B1 and the symmetrical parallel resonant unit B2 are all provided with spiral structure inductors;

and the symmetrical series resonance unit A1, the symmetrical series resonance unit A2, the symmetrical parallel resonance unit B1 and the symmetrical parallel resonance unit B2 are all provided with capacitors with double-layer structures.

Preferably, the first dielectric material layer M1 and the third dielectric material layer M3 both use low-k materials, and the second dielectric material layer M2 is a high-k material.

Preferably, the input port Pin and the output port Pout both adopt surface-mounted 50-ohm impedance output ports.

Preferably, the inductance of the symmetrical series resonant cell a1 and the inductance of the symmetrical series resonant cell a2 are on the same layer, and the inductance of the symmetrical parallel resonant cell B1 and the inductance of the symmetrical parallel resonant cell B2 are on the same layer.

Preferably, a ground plate GND is further provided, and the ground port P3 and the ground port P4 are both connected to the ground plate GND.

A novel symmetrical structure's absorption type low pass filter, solved the technical problem who makes the input signal halve to the output both ends, the utility model has the advantages of small, the precision is high, the stop band signal absorbs well, can effectively reduce the crosstalk among each transmission path, has good application advantage in many electronic systems sensitive to the reflection signal.

Drawings

Fig. 1 is a schematic structural diagram of a low-pass filtering unit according to the present invention;

FIG. 2 is a schematic view of the general structure of the present invention;

fig. 3 is an output characteristic curve of the present invention.

Detailed Description

The novel absorption type low-pass filter with the symmetrical structure shown in fig. 1-3 comprises a low-pass filter unit, a first dielectric material layer M1, a second dielectric material layer M2 and a third dielectric material layer M3 which are sequentially arranged from top to bottom;

the resistor R is set to a resistance value by the resistor paste material.

When the symmetrical parallel resonant circuit is used, a source signal is input from an input port Pin and is output from an output port Pout through a resistor R, and the symmetrical series resonant unit A1, the symmetrical series resonant unit A2, the symmetrical parallel resonant unit B1 and the symmetrical parallel resonant unit B2 are distributed on the rear side and the front side of the resistor R to carry out low-pass filtering on the source signal so that the input signal is halved to two output ends.

The utility model discloses a three-dimensional integrated structure of specific symmetry formula adopts LTCC base plate technology to realize. The utility model provides an absorption type low pass filter is small, only is 2.6mm 1mm, small, light in weight, reliability are high, the electrical property is excellent, the yield is high, the uniformity is good in batches, temperature stable performance, stop band signal absorb good novel symmetrical structure's absorption type low pass filter, its performance can be seen from figure 2, its cut-off frequency is 4GHz, return loss is good. The filter has the advantages of small volume, high precision and good stop band signal absorption, and can be widely applied to various systems sensitive to reflected signals.

Claims

1. An absorption type low-pass filter with a novel symmetrical structure is characterized in that: the filter comprises a low-pass filter unit, a first dielectric material layer M1, a second dielectric material layer M2 and a third dielectric material layer M3 which are sequentially arranged from top to bottom;

the resistor R is set to a resistance value by the resistor paste material.

2. A novel symmetrical absorptive low-pass filter according to claim 1, wherein: the symmetrical series resonance unit A1, the symmetrical series resonance unit A2, the symmetrical parallel resonance unit B1 and the symmetrical parallel resonance unit B2 are all provided with spiral structure inductors;

3. A novel symmetrical absorptive low-pass filter according to claim 2, wherein: the first dielectric material layer M1 and the third dielectric material layer M3 both use low-k materials, and the second dielectric material layer M2 is a high-k material.

4. A novel symmetrical absorptive low-pass filter according to claim 1, wherein: the input port Pin and the output port Pout both adopt 50 ohm impedance output ports which are surface mounted.

5. A novel symmetrical absorptive low-pass filter according to claim 2, wherein: the inductance of the symmetrical series resonant unit A1 and the inductance of the symmetrical series resonant unit A2 are on the same layer, and the inductance of the symmetrical parallel resonant unit B1 and the inductance of the symmetrical parallel resonant unit B2 are on the same layer.

6. A novel symmetrical absorptive low-pass filter according to claim 1, wherein: a ground plate GND is further provided, and the ground port P3 and the ground port P4 are both connected with the ground plate GND.