CN211629128U

CN211629128U - Novel improve ageing epitaxial wafer structure of yellow green light

Info

Publication number: CN211629128U
Application number: CN201921693667.9U
Authority: CN
Inventors: 杨祺; 刘芬; 徐培强; 王克来; 熊珊; 张银桥; 王向武
Original assignee: Nanchang Kaixun Photoelectric Co ltd
Current assignee: Nanchang Kaixun photoelectric Co.,Ltd.
Priority date: 2019-10-11
Filing date: 2019-10-11
Publication date: 2020-10-02
Anticipated expiration: 2029-10-11

Abstract

The utility model discloses a novel improve ageing epitaxial wafer structure of yellow green light, including the GaAs substrate, wherein: the GaAs substrate is sequentially provided with a buffer layer, an AlGaAs/AlAs DBR reflecting layer, an n-AlInP limiting layer, an n-AlGaInP waveguide layer, an MQW active layer, a p-AlGaInP waveguide layer, a highly doped p-AlInP layer, a p-AlInP limiting layer and a p-GaP current extension layer. The utility model discloses a p-type AlInP layer that mixes with inserting one deck height between p-type waveguide layer and the p-type restriction layer. Because the attenuation of the holes in the LED is larger than that of the electrons, after the P-type high-doping layer is added, the lost holes can be supplemented by virtue of the diffusion of Mg ions, the original light attenuation is changed into light increase, and the light attenuation condition of the aged device is controlled.

Description

Novel improve ageing epitaxial wafer structure of yellow green light

Technical Field

The utility model relates to a semiconductor diode technical field especially relates to a novel improve ageing epitaxial wafer structure of yellow green light.

Background

As the band gap of the AlGaInP material for the yellow-green light LED is very close to the indirect band gap, the Auger recombination probability is increased, high Al content is needed during growth, impurities such as oxygen element and the like are easily introduced during the growth process, the crystal quality is deteriorated, the impurities become non-radiative recombination centers to attenuate the optical power of the LED device, and the reliability is reduced; meanwhile, the stability of a yellow-green light Multiple Quantum Well (MQW) is deviated from that of other wave bands, so that the influence degree of the loss of carriers on the light attenuation is increased. Therefore the utility model discloses a structure to the device is optimized, reduces the carrier and spills over to improve yellow green light LED's internal quantum efficiency and luminous efficacy. The utility model discloses a novel structure is for between P type waveguide layer and P type limiting layer and insert a layer of high P type AlInP layer of mixing, because the decay in hole will be greater than the decay of electron in the LED, adds the high doping layer of P type after, this layer can borrow the diffusion by the Mg ion, and the hole of supplementary loss changes original light decay into the light increase to the light decay condition after the control is ageing.

SUMMERY OF THE UTILITY MODEL

The utility model aims at overcoming prior art's is not enough, a novel improve ageing epitaxial wafer structure of yellow green light, through between P type waveguide layer and P type limiting layer and insert a layer of high P type AlInP layer of mixing, because the decay in hole will be greater than the decay of electron in the LED, add behind the high doping layer of P type, this layer can borrow the diffusion of Mg ion, and the hole of supplementary loss changes original light decay for the light increase to the light decay condition after the control is ageing.

The technical scheme of the utility model as follows: a novel improved yellow-green light aging epitaxial wafer structure comprises a GaAs substrate, wherein: the GaAs substrate is sequentially provided with a buffer layer, an AlGaAs/AlAs DBR reflecting layer, an n-AlInP limiting layer, an n-AlGaInP waveguide layer, an MQW active layer, a p-AlGaInP waveguide layer, a highly doped p-AlInP layer, a p-AlInP limiting layer and a p-GaP current extension layer.

Preferably, the thickness of the buffer layer is 0.5 μm, and the doping concentration of the buffer layer is 4-5 × 10¹⁷cm^-3The thickness of the AlGaAs/AlAs DBR reflecting layer is 1.6 μm, and the doping concentration of the AlGaAs/AlAs DBR reflecting layer is 1-2 × 10¹⁸cm^-3The thickness of the n-AlInP limiting layer is 0.5 mu m, and the doping concentration of the n-AlInP limiting layer is 2-3 × 10¹⁸cm^-3The thickness of the n-AlGaInP waveguide layer is 0.1 μm, and the doping concentration of the n-AlGaInP waveguide layer is 2-3 × 10¹⁷cm^-3。

Preferably, the thickness of the MQW active layer is 0.5 μm, the thickness of the well and the barrier of each MQW active layer is 10nm, the thickness of the p-AlGaInP waveguide layer is 0.1 μm, and the doping concentration of the p-AlGaInP waveguide layer is 4-5 × 10¹⁷cm^-3，

Preferably, the thickness of the highly doped p-AlInP layer is 20nm, and the doping concentration is 1-2 × 10¹⁸cm^-3。

Preferably, the thickness of the p-AlInP limiting layer is 0.8 mu m, and the doping concentration of the p-AlInP limiting layer is 6-7 × 10¹⁷cm^-3The thickness of the p-GaP current spreading layer is 5 μm, and the doping concentration of the p-GaP current spreading layer is more than 1-2 × 10¹⁸cm^-3。

The utility model discloses a technological effect and advantage:

by inserting a highly doped P-type AlInP layer between the P-type waveguide layer and the P-type confinement layer, the carrier loss can be improved by carrier compensation after the P-type highly doped layer is added, because the attenuation of holes in the LED is larger than that of electrons. The highly doped AlInP layer novel structure can supplement the lost holes by means of the diffusion of Mg ions, and change the original light attenuation into light increase, thereby controlling the aged light attenuation condition.

Drawings

Fig. 1 is a schematic structural diagram of the present invention.

In the figure: 101. a GaAs substrate; 102. a buffer layer; 103. AlGaAs/AlAs DBR reflective layer; 104. An n-AlInP confinement layer; 105. an n-AlGaInP waveguide layer; 106. an MQW active layer; 107. a p-AlGaInP waveguide layer; 108. a highly doped p-AlInP layer; 109. a p-AlInP confinement layer; 110. a p-GaP current spreading layer.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Embodiment 1, please refer to fig. 1, a new improved yellow-green light aging epitaxial wafer structure includes a GaAs substrate 101, wherein: the GaAs substrate 101 is sequentially provided with a buffer layer 102, an AlGaAs/AlAs DBR reflecting layer 103, an n-AlInP limiting layer 104, an n-AlGaInP waveguide layer 105, an MQW active layer 106, a p-AlGaInP waveguide layer 107, a highly doped p-AlInP108, a p-AlInP limiting layer 109 and a p-GaP current expanding layer 110.

Example 2 referring to fig. 1, the thickness of the buffer layer 102 is 0.5 μm, and the doping concentration of the buffer layer 102 is 4 to 5 × 10¹⁷cm^-3The AlGaAs/AlAs DBR reflective layer 103 has a thickness of 1.6 μm, and the AlGaAs/AlAs DBR reflective layer 103 has a doping concentration of 1-2 × 10¹⁸cm^-3The thickness of the n-AlInP limiting layer 104 is 0.5 μm, and the doping concentration of the n-AlInP limiting layer 104 is 2-3 × 10¹⁸cm^-3The n-AlGaInP waveguide layer 105 has a thickness of 0.1 μm and a doping concentration of 2-3 × 10¹⁷cm^-3. The rest is the same as example 1.

In embodiment 3, referring to FIG. 1, the MQW active layer 106 has a thickness of 500nm, the well and the barrier of each MQW active layer 106 have a thickness of 10nm, the p-AlGaInP waveguide layer 107 has a thickness of 0.1 μm, and the p-AlGaInP waveguide layer 107 has a doping concentration of 4-5 × 10¹⁷cm^-3Otherwise, the same procedure as in example 1 was repeated.

Example 4 referring to FIG. 1, the highly doped p-AlInP layer 108 has a thickness of 20nm and a doping concentration of 1-2 × 10¹⁸cm^-3。

Example 5 referring to FIG. 1, the p-AlInP confinement layer 109 has a thickness of 0.8 μm, and the p-AlInP confinement layer 109 has a doping concentration of 6 to 7 × 10¹⁷cm^-3The thickness of the p-GaP current spreading layer 110 is 5 μm, and the doping concentration of the p-GaP current spreading layer 110 is greater than 1-2 × 10¹⁸cm^-3. The rest is the same as example 1.

The above, only be the utility model discloses a preferred embodiment, it is not right the utility model discloses do any restriction, all according to the utility model discloses the technical entity all still belongs to any simple modification, change and the equivalent structure change of doing above embodiment the utility model discloses technical scheme's within the scope of protection.

Claims

1. A novel improve yellow green light and age epitaxial wafer structure, includes GaAs substrate (101), its characterized in that: the GaAs substrate (101) is sequentially provided with a buffer layer (102), an AlGaAs/AlAs DBR reflecting layer (103), an n-AlInP limiting layer (104), an n-AlGaInP waveguide layer (105), an MQW active layer (106), a p-AlGaInP waveguide layer (107), a high-doped p-AlInP layer (108), a p-AlInP limiting layer (109) and a p-GaP current expanding layer (110).

2. The novel improved yellow-green light aging epitaxial wafer structure of claim 1, wherein: the buffer layer (102) is 0.5 μm thick, the AlGaAs/AlAs DBR reflective layer (103) is 1.6 μm thick, the n-AlInP confinement layer (104) is 0.5 μm thick, and the n-AlGaInP waveguide layer (105) is 0.1 μm thick.

3. The novel improved yellow-green light aging epitaxial wafer structure of claim 1, wherein: the thickness of the MQW active layer (106) is 0.5 μm, and the thickness of the trap and the barrier of each MQW active layer (106) is 10 nm.

4. The novel improved yellow-green light aging epitaxial wafer structure of claim 1, wherein: the thickness of the highly doped p-AlInP layer (108) is 20 nm.

5. The novel improved yellow-green light aging epitaxial wafer structure of claim 1, wherein: the p-AlInP confinement layer (109) is 0.8 μm thick and the p-GaP current spreading layer (110) is 5 μm thick.