CN211626765U - Stress-strain sensor, stress-strain sensing module and electronic equipment - Google Patents
Stress-strain sensor, stress-strain sensing module and electronic equipment Download PDFInfo
- Publication number
- CN211626765U CN211626765U CN202020223419.4U CN202020223419U CN211626765U CN 211626765 U CN211626765 U CN 211626765U CN 202020223419 U CN202020223419 U CN 202020223419U CN 211626765 U CN211626765 U CN 211626765U
- Authority
- CN
- China
- Prior art keywords
- electrode
- stress
- strain sensor
- electrodes
- substrate plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
The utility model discloses a stress strain sensor, stress strain sensing module and electronic equipment. A stress-strain sensor, comprising: a first base component, a second base component, and a second substrate board. The first base layer assembly comprises a first substrate plate, a first electrode, a piezoelectric layer and a second electrode, wherein the first electrode is arranged on one surface of the first substrate plate, the piezoelectric layer is arranged on the surface of the first electrode, which faces away from the first substrate plate, and the second electrode is arranged on the surface of the piezoelectric layer, which faces away from the first electrode. The second substrate assembly includes an insulating layer and a shield electrode. In this embodiment, the first substrate board is attached to the insulating layer, and the insulating layer is further connected to the second substrate board in a press-fit manner. Compare in the stress strain sensor among the prior art all be equipped with the structure of the adhesive linkage of area detection electrode on the relative two sides of piezoelectric layer, the utility model discloses a stress strain sensor does not have this adhesive linkage to make stress strain sensor's thickness reduce, thereby improve stress strain sensor's bending property.
Description
Technical Field
The utility model relates to a technical field that stress-strain detected especially relates to a stress-strain sensor, stress-strain sensing module and electronic equipment.
Background
Stress strain sensors are sensors made with certain dielectrics that can produce a piezoelectric effect when subjected to a force. The piezoelectric effect is a phenomenon in which, when some dielectrics are deformed by an external force such as bending or expansion in a certain direction, induced charges are generated on the surface of the material due to an internal polarization phenomenon.
Currently, a stress-strain sensor includes a monolithic piezoelectric layer, a sensing electrode layer and a shielding electrode layer on both sides of the piezoelectric layer, another substrate containing a shielding electrode, and a substrate for protecting the electrodes. The piezoelectric layer, the substrate containing the shielding electrode and the substrate for protecting the electrode are bonded together through the bonding layer. However, because the stress-strain sensor is composed of a plurality of adhesive layers and a plurality of laminated layers, the thickness of the stress-strain sensor is large, the curvature and the user experience of the stress-strain sensor are further influenced, and meanwhile, the cost of the sensor is high due to the laminated design of the plurality of laminated layers, and the use and popularization are influenced.
SUMMERY OF THE UTILITY MODEL
The utility model provides a stress strain sensor, stress strain sensing module and electronic equipment can effectively solve stress strain sensor because thickness is too big and influence the crooked problem of stress strain sensor.
According to a first aspect of the present invention, there is provided a stress-strain sensor, comprising:
the first base layer assembly comprises a first base material plate, a first electrode, a piezoelectric layer and a second electrode, wherein the first electrode is positioned on one surface of the first base material plate, the piezoelectric layer is positioned on the surface of the first electrode, which is far away from the first base material plate, and the second electrode is positioned on the surface of the piezoelectric layer, which is far away from the first electrode;
the second substrate assembly comprises an insulating layer and a shielding electrode, the insulating layer comprises a first surface and a second surface opposite to the first surface, and the shielding electrode is positioned on the second surface;
a second substrate sheet;
the surface of the first substrate plate, which is provided with the first electrode, is attached to the first surface, and the second substrate plate is located on the second surface.
Optionally, the first base layer assembly includes a third surface facing the second base layer assembly, and the insulating layer is formed on the third surface by any one of a yellow light process, a screen printing process, and a coating process.
The effects in the above embodiment are: the first electrode, the piezoelectric layer and the second electrode are covered by the insulating layer formed on the third surface by adopting a yellow light process, so that the insulating property of the stress-strain sensor is improved.
Optionally, the second substrate plate is in press-fit connection with the insulating layer.
The effects in the above embodiment are: the insulating layer is connected with the second substrate plate in a pressing mode, so that the phenomenon that the thickness and the size of the stress-strain sensor are increased due to the fact that an adhesive layer is used between the insulating layer and the second substrate plate can be avoided, and further the bending performance of the stress-strain sensor is influenced.
Optionally, the shielding electrode and the second electrode form an orthographic projection on the surface of the first substrate plate, in a direction perpendicular to the surface, on which the first electrode is disposed, and the orthographic projection corresponding to the shielding electrode completely covers the orthographic projection corresponding to the second electrode.
The effects in the above embodiment are: the area of the shielding electrode is larger than that of the second electrode, so that the shielding electrode completely shields electromagnetic interference of an external electric field to the second electrode.
Optionally, the first electrode is grounded, and along a direction perpendicular to the first surface, the first electrode and the second electrode both form an orthographic projection on the first surface, and the orthographic projection corresponding to the first electrode completely covers the orthographic projection corresponding to the second electrode.
The effects in the above embodiment are: the area of the first electrode is larger than that of the second electrode, so that the first electrode completely shields electromagnetic interference of an external electric field to the second electrode.
Optionally, the stress-strain sensor is in the shape of a strip; the number of the first electrodes is multiple, the number of the piezoelectric layers is the same as that of the first electrodes, the number of the second electrodes is the same as that of the first electrodes, and the number of the shielding electrodes is the same as that of the first electrodes; the first electrodes are arranged in a row along the length direction of the stress-strain sensor, and a piezoelectric layer, a second electrode and a shielding electrode are correspondingly arranged between each first electrode and the second substrate plate respectively.
The effects in the above embodiment are: a plurality of small block-shaped first electrodes, piezoelectric layers, second electrodes, and shield electrodes are employed so that the manufacturing cost of the stress-strain sensor is saved.
Optionally, the stress-strain sensor further includes first lead-out wires, second lead-out wires having the same number as the second electrodes, and third lead-out wires, and the first lead-out wires, the second lead-out wires, and the third lead-out wires are all located in a gap formed between the first substrate plate and the second substrate plate; the first electrodes are connected in series through a first lead-out wire, the second electrodes are connected with the second lead-out wires in a one-to-one correspondence mode, and the shielding electrodes are connected in series through a third lead-out wire.
The effects in the above embodiment are: and the second electrodes are correspondingly connected with the second lead-out wires one by one, so that stress strain detection can be performed on different parts of the stress strain sensor.
Optionally, the stress-strain sensor further comprises an adhesive layer, and the adhesive layer is located between the insulating layer and the second substrate plate, so that one side of the adhesive layer is adhered to the second surface, and the other opposite side is adhered to the surface of the second substrate plate facing the insulating layer.
The effects in the above embodiment are: the bonding layer can improve the connection strength between the insulating layer and the second substrate board and improve the reliability of the stress-strain sensor.
According to the utility model discloses a second aspect provides a stress-strain sensing module, include:
the stress-strain sensor of any one of the above.
According to the utility model discloses a third aspect provides an electronic equipment, include:
the stress strain sensing module is provided.
According to the utility model provides a pair of stress strain sensor, including first basic unit's subassembly, second basic unit's subassembly and second substrate board. The first base layer assembly comprises a first substrate plate, a first electrode, a piezoelectric layer and a second electrode, wherein the first electrode is arranged on one surface of the first substrate plate, the piezoelectric layer is arranged on the surface of the first electrode, which faces away from the first substrate plate, and the second electrode is arranged on the surface of the piezoelectric layer, which faces away from the first electrode. The second substrate assembly includes an insulating layer and a shielding electrode, the insulating layer includes a first surface and a second surface opposite to the first surface, and the shielding electrode is located on the second surface. The surface of the first substrate plate, which is provided with the first electrode, is attached to the first surface, and the second substrate plate is located on the second surface. Because the stress-strain sensor of this embodiment is laminated by three parts of first basic unit's subassembly, second basic unit's subassembly and second substrate board and is constituteed, wherein, first substrate board is connected with the insulating layer laminating, and the insulating layer is connected with second substrate board pressfitting. Compare in the stress strain sensor among the prior art all is equipped with the structure of taking the adhesive linkage of detection electrode on the relative two sides of piezoelectric layer, the utility model discloses a stress strain sensor does not have this adhesive linkage to make stress strain sensor's thickness reduce, and satisfy the demand of stress strain sensor slimming and lightweight, can show the bending property who improves stress strain sensor.
Drawings
In order to illustrate the embodiments of the present invention or the technical solutions in the prior art more clearly, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a cross-sectional view of a prior art stress-strain sensor;
FIG. 2 is an exploded schematic view of a cross-sectional view of the stress-strain sensor of FIG. 1;
fig. 3 is a cross-sectional view of a stress-strain sensor according to a first embodiment of the present invention;
FIG. 4 is an enlarged partial schematic view of a cross-sectional view of the stress-strain sensor of FIG. 3, illustrating the relative positional relationship between the first electrode, the piezoelectric layer, the second electrode, and the shield electrode;
fig. 5 is an exploded schematic view of a cross-sectional view of a stress-strain sensor according to a first embodiment of the present invention;
fig. 6 is a plan view of a stress-strain sensor according to a first embodiment of the present invention, in which a relative positional relationship among a first lead-out wire, a second lead-out wire, and a second lead-out wire is illustrated;
fig. 7 is a plan view of a stress-strain sensor according to a first embodiment of the present invention, in which a relative positional relationship between a first electrode and a first lead-out wire is illustrated;
fig. 8 is a top view of a stress-strain sensor according to a first embodiment of the present invention, in which a piezoelectric layer is illustrated;
fig. 9 is a plan view of a stress-strain sensor according to a first embodiment of the present invention, in which a relative positional relationship between a second electrode and a second lead-out wire is illustrated;
fig. 10 is a plan view of a stress-strain sensor according to a first embodiment of the present invention, in which a relative positional relationship between a shield electrode and a third lead-out wire is illustrated;
fig. 11 is a cross-sectional view of a stress-strain sensor according to a second embodiment of the present invention, in which the relative positional relationship between the adhesive layer and the insulating layer and the second substrate sheet is illustrated;
fig. 12 is a cross-sectional view of a stress-strain sensor according to a third embodiment of the present invention;
FIG. 13 is an enlarged, fragmentary schematic view of a cross-sectional view of the stress-strain sensor of FIG. 12, illustrating a first position electrode and a second position electrode;
fig. 14 is an exploded schematic view of a cross-sectional view of a stress-strain sensor according to a third embodiment of the present invention;
fig. 15 is a top view of a stress-strain sensor according to a third embodiment of the present invention, in which a fourth lead-out conductor and a fifth lead-out conductor are illustrated;
fig. 16 is a plan view of a stress-strain sensor according to a third embodiment of the present invention, in which the relative positional relationship between the first position electrode and the fourth lead-out wire is illustrated;
fig. 17 is a plan view of a stress-strain sensor according to a third embodiment of the present invention, in which a relative positional relationship between the second position electrode and the fifth lead-out wire is illustrated.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention.
It should be noted that, in the present invention, in fig. 6-10 and fig. 15-17, when the positional relationship of the first electrode 112, the second electrode 114, the piezoelectric layer 113, the shielding electrode 122, the first position electrode 150, and the second position electrode 160 is described, other parts than the described parts can be processed in a see-through manner. In fig. 6, in describing the position relationship of the shielding electrode 122, the second substrate plate 130 laminated on the surface of the shielding electrode 122 facing away from the insulating layer 121 may be visually processed to facilitate clear observation of the relative position relationship between the shielding electrode 122 and the insulating layer 121. It should be noted that the perspective processing is only for clearly describing the position relationship between the shielding electrode 122 and the insulating layer 121, and the present invention is not limited to the material of the second substrate 130. Similarly, when describing the positional relationship among the second electrode 114, the piezoelectric layer 113, the first electrode 112, the first position electrode 150, and the second position electrode 160, the processing method is the same as the method of the shielding electrode 122, and thus the description thereof is omitted.
As shown in fig. 1-2, the present stress-strain sensor 10 includes a first substrate plate 11, a first electrode 12, a piezoelectric layer 13, a second electrode 14, a second substrate plate 15, a shield electrode 16, and a third substrate plate 17. The first electrode 12 is located on a surface of the piezoelectric layer 13 facing the first substrate plate 11, the second electrode 14 is located on a surface of the piezoelectric layer 13 facing away from the first substrate plate 11, a surface of the second substrate plate 15 facing the second electrode is bonded to a surface of the piezoelectric layer 13 to which the second electrode 14 is attached, a surface of the first substrate plate 11 facing the first electrode 12 is bonded to a surface of the piezoelectric layer 13 to which the first electrode 12 is attached, wherein a shield electrode 16 is attached to a surface of the second substrate plate 15 facing away from the second electrode, and the shield electrode 16 is bonded to one surface of the third substrate plate 17. The size of the piezoelectric layer 13 is the same as the area of the first substrate plate 11, the second substrate plate 15, and the third substrate plate 17, that is, in the direction perpendicular to the first substrate plate 11, the projections of the third substrate plate 17, the second substrate plate 15, and the piezoelectric layer 13 formed on the surface of the first substrate plate 11 facing the piezoelectric layer 13 are all the same, and all completely cover the surface of the first substrate plate 11 facing the piezoelectric layer 13. The first electrode 12 is disposed in the bonding layer formed by completely filling the bonding paste between the first substrate plate 11 and the piezoelectric layer 13, the second electrode 14 is disposed in the bonding layer formed by completely filling the bonding paste between the second substrate plate 15 and the piezoelectric layer 13, and the shielding electrode 16 is disposed in the bonding layer formed by completely filling the bonding paste between the second substrate plate 15 and the third substrate plate 17. Therefore, the stress-strain sensor 10 of the prior art has four laminated layers of three substrate plates, one piezoelectric layer, and three adhesive layers, so that the thickness of the stress-strain sensor 10 is large, thereby affecting the bending performance and the user experience of the stress-strain sensor 10 a.
A stress-strain sensor 100 of the present invention, as shown in fig. 3-10, includes a first substrate assembly 110, a second substrate assembly 120, and a second substrate plate 130. The first base layer assembly 110 includes a first substrate plate 111, a first electrode 112, a piezoelectric layer 113, and a second electrode 114, the first electrode 112 is located on one surface of the first substrate plate 111, the piezoelectric layer 113 is located on a surface of the first electrode 112 facing away from the first substrate plate 111, and the second electrode 114 is located on a surface of the piezoelectric layer 113 facing away from the first electrode 112. The second substrate assembly 120 includes an insulating layer 121 and a shielding electrode 122, the insulating layer 121 includes a first surface 1211 and a second surface 1212 opposite to the first surface 1211, and the shielding electrode 122 is disposed on the second surface 1212. The surface of the first substrate 111 on which the first electrode 112 is disposed is attached to the first surface 1211, and the second substrate 130 is located on the second surface 1212.
The stress-strain sensor 100 of the present embodiment is composed of three components, i.e., a first base member 110, a second base member 120, and a second base material plate 130, which are stacked. The surface of the first substrate 111 on which the first electrode 112 is disposed is directly attached to the first surface 1211 of the insulating layer 121, and the second substrate 130 is located on the second surface 1212 of the insulating layer 121. Compare in stress strain sensor 10 among the prior art all is equipped with the structure of taking the adhesive linkage of detection electrode on piezoelectric layer 13's relative two sides, the utility model discloses a stress strain sensor does not have this adhesive linkage to make stress strain sensor 100's thickness reduce, and satisfy stress strain sensor 100 slimming and lightweight demand, can show the bending property who improves stress strain sensor 100.
In the stress-strain sensor 100, the insulating effect of the insulating layer 121 directly affects the product quality of the stress-strain sensor 100. In the first embodiment of the present invention, the first substrate component 110 includes a third surface 1111 facing the second substrate component 120, and the insulating layer 121 is formed on the third surface 1111 by a yellow light process. For example, the insulating layer 121 can be formed by exposure and development. Note that the specific formation process of the insulating layer 121 is not limited in this embodiment.
The insulating layer 121 covers the third surface 1111 of the first base layer assembly 110 facing the second base layer assembly 120, so that the insulating layer 121 may completely cover the first electrode 112, the piezoelectric layer 113, and the second electrode 114, thereby improving reliability of the insulating performance of the stress-strain sensor 100.
In order to ensure a durable durability of the stress-strain sensor 100. The utility model discloses in the first embodiment, the material of first substrate board 111 and second substrate board 130 is polyester resin (Polyethylene terephthalate PET), and polyester resin has creep resistance, fatigue resistance, wear-resisting characteristics of wiping and dimensional stability are good, and electrical insulation performance is outstanding. The first electrode 112, the second electrode 114, the piezoelectric layer 113, and the shielding electrode 122 disposed between the first substrate plate 111, the insulating layer 121, and the second substrate plate 130 may be effectively protected. The utility model discloses do not do specifically to the material of first substrate board 111 and second substrate board 130 and prescribe a limit to, all have with the dacron resin material function the same organic membrane material all in the protection scope of this embodiment.
In the first embodiment of the present invention, the thickness of the first substrate plate 111 and the second substrate plate 130 can be 10um-200um, for example, the thickness of the first substrate plate 111 and the second substrate plate 130 can be 10um, 100um or 200 um. The thickness dimension of the piezoelectric layer 113 can be 5um-200um, for example, the thickness dimension of the piezoelectric layer 113 can be 5um, 100um, or 200 um. And the thickness of the insulating layer 121 may be 5um-50um, for example, the thickness of the insulating layer 121 may be 5um, 30um or 50 um.
In the above embodiment, the thickness of the first substrate 111, the second substrate 130, the piezoelectric layer 113 and the insulating layer 121 are sized to enhance the bending performance and the production cost of the stress-strain sensor 100 while satisfying the use performance of the stress-strain sensor 100. Without being limited thereto, in the present embodiment, the above advantageous effects can also be achieved by defining other parameters, such as length, width, or shape, and the like, and the thickness dimensions of the first substrate plate 111, the second substrate plate 130, the piezoelectric layer 113, and the insulating layer 121 are only illustrated schematically in the present embodiment, and all structures having the same or similar structure as the first substrate plate 111, the second substrate plate 130, the piezoelectric layer 113, and the insulating layer 121 in the present embodiment are within the protection scope of the present embodiment.
In the process of manufacturing the stress-strain sensor 100, the second substrate 130 is bonded to the insulating layer 121. The press-fit connection between the second substrate 130 and the insulating layer 121 may be any known press-fit connection, and the press-fit connection between the second substrate 130 and the insulating layer 121 may be understood as that the second substrate 130 and the insulating layer 121 may be directly connected without using other connecting materials. For example, the second substrate 130 is attached to the second surface 1212 of the insulating layer 121 under a predetermined pressure, so that the first base layer assembly 110, the second base layer assembly 120 and the second substrate 130 form an integrated stacked structure.
The anti-electromagnetic interference performance is one of the important performances of electronic devices. In this embodiment, both the shielding electrode 122 and the second electrode 114 may have any shape, for example, the shielding electrode 122 has a rectangular shape, and the second electrode 114 has a circular shape. In a direction perpendicular to the surface of the first substrate plate 111 on which the first electrode 112 is disposed, the shielding electrode 122 and the second electrode 114 each form an orthographic projection on the surface, and the orthographic projection corresponding to the shielding electrode 122 completely covers the orthographic projection corresponding to the second electrode 114.
In this embodiment, the orthographic projection corresponding to the shielding electrode 122 completely covers the orthographic projection corresponding to the second electrode 114, so that the area size of the shielding electrode 122 is indirectly larger than the area size of the second electrode 114, and because the area size of the shielding electrode 122 is larger than the area size of the second electrode 114, the shielding electrode 122 can completely shield the electromagnetic interference of the external magnetic field on the second electrode 114, so as to ensure the normal operation of the stress-strain sensor 100.
Similarly, in the present embodiment, the first electrode 112 may be grounded, and the first electrode 112 and the second electrode 114 form an orthogonal projection on the first surface 1211 along a direction perpendicular to the first surface 1211 of the insulating layer 121, and the orthogonal projection corresponding to the first electrode 112 completely covers the orthogonal projection corresponding to the second electrode 114.
In the above embodiment, the first electrode 112 has the same function as the shielding electrode 122 when grounded. The orthographic projection corresponding to the first electrode 112 completely covers the orthographic projection corresponding to the second electrode 114, so that the area size of the first electrode 112 is indirectly larger than that of the second electrode 114, and because the area size of the first electrode 112 is larger than that of the second electrode 114, the first electrode 112 can completely shield the electromagnetic interference of the external magnetic field on the second electrode 114, thereby ensuring the normal operation of the stress-strain sensor 100.
The manufacturing cost of the stress-strain sensor 100 has a limiting effect on the spread of the stress-strain sensor 100. In the first embodiment of the present invention, the stress-strain sensor 100 may be a strip. It should be noted that the stress-strain sensor 100 may have any shape, and the specific reason for this embodiment is the same as that in the above embodiments, and therefore, the detailed description thereof is omitted. The number of the first electrodes 112 may be plural, the number of the piezoelectric layers 113 is the same as the number of the first electrodes 112, the number of the second electrodes 114 is the same as the number of the first electrodes 112, and the number of the shielding electrodes 122 is the same as the number of the first electrodes 112.
The first electrodes 112 are arranged in a row along the length direction of the stress-strain sensor 100, and a piezoelectric layer 113, a second electrode 114, and a shielding electrode 122 are respectively disposed between each first electrode 112 and the second substrate 130.
In this embodiment, compared with the use of a whole first electrode 112, the production cost of the first electrode 112 can be saved. The same number of piezoelectric layers 113, second electrodes 114, and shielding electrodes 122 also saves the production cost of the stress-strain sensor 100, and further improves the bending performance of the stress-strain sensor 100.
In order to efficiently output the detection signal of the stress strain sensor 100. In the first embodiment of the present invention, the stress-strain sensor 100 further includes the first lead-out wires 115, the second lead-out wires 116 having the same number as the second electrodes 114, and the third lead-out wires 117. The first substrate plate 111 and the second substrate plate 130 together define a gap for accommodating the first electrode 112, the piezoelectric layer 113, the second electrode 114, and the insulating layer 121, and the first lead-out wire 115, each of the second lead-out wires 116, and the third lead-out wire 117 are located in the gap formed between the first substrate plate 111 and the second substrate plate 130.
The first electrodes 112 are connected in series by a first lead wire 115, the second electrodes 114 are connected to the second lead wires 116 in a one-to-one correspondence, and the shielding electrodes 122 are connected in series by a third lead wire 117.
The second electrodes 114 are connected to the second lead-out wires 116 in a one-to-one correspondence manner, and can transmit detection signals of different parts of the stress-strain sensor 100 to obtain a plurality of measured values, so that the detection accuracy of the stress-strain sensor 100 is improved.
In order to improve the connection strength between the second base layer assembly 120 and the second substrate board 130, in the second embodiment of the present invention, as shown in fig. 11, the stress-strain sensor 100 may further include an adhesive layer 140. The adhesive layer 140 is located between the insulating layer 121 and the second substrate board 130, and one side of the adhesive layer 140 is adhered to the second surface 1212 of the insulating layer 121, and the opposite side is adhered to the surface of the second substrate board 130 facing the insulating layer 121.
The adhesive layer 140 may be an adhesive glue, which is filled in the gap between the second substrate 130 and the insulating layer 121 and is condensed into a layer body, so that the second substrate 130 and the insulating layer 121 are fixedly connected to each other. In this embodiment, the specific material of the adhesive layer 140 is not limited.
By providing the adhesive layer 140 between the second substrate board 130 and the insulating layer 121, the connection strength between the second substrate board 130 and the insulating layer 121 of the second base layer assembly 120 can be significantly improved, thereby improving the product reliability of the stress-strain sensor 100.
In order to detect the touch position on the stress-strain sensor 100, in a third embodiment of the present invention, as shown in fig. 12 to 17, the stress-strain sensor 100 may further include a first position electrode 150 and a plurality of second position electrodes 160. The first position electrodes 150 are located on the surface of the first substrate plate 111 where the first electrodes 112 are located, and each of the second position electrodes 160 is located on the second surface 1212 of the insulating layer 121.
By disposing the first position electrode 150 on the first substrate 111 and disposing the plurality of second position electrodes 160 on the insulating layer 121, a capacitive sensor can be formed between the first position electrode 150 and the second position electrodes 160 for detecting the touch position. When the stress-strain sensor 100 is introduced into the capacitive sensor formed by the first position electrode 150 and the second position electrode 160, the electromagnetic shielding effect can be achieved, so as to eliminate the interference of other piezoelectric layers 113, thereby improving the detection accuracy of the stress-strain sensor 100.
In this embodiment, the stress-strain sensor 100 may have an elongated shape. The first position electrodes 150 extend in the longitudinal direction of the stress-strain sensor 100, and the second position electrodes 160 are arranged in line in the longitudinal direction of the stress-strain sensor 100. Wherein, each second position electrode 160 can be arranged at a predetermined distance and at equal intervals, or at unequal intervals, and the utility model discloses do not limit the concrete arrangement of each second position electrode 160.
When the second position electrodes 160 are arranged at equal intervals, the bending performance of the stress-strain sensor 100 can be significantly improved, and the appearance expression of the stress-strain sensor 100 can be improved.
In order to effectively output a detection signal of the touch position of the stress-strain sensor 100, in the present embodiment, the stress-strain sensor 100 further includes fourth lead-out wires 170 and fifth lead-out wires 180 that are the same in number as the second position electrodes 160, and the fourth lead-out wires 170 and the fifth lead-out wires 180 are located in a gap formed between the first substrate plate 111 and the second substrate plate 130. The first position electrodes 150 are connected to the fourth lead wires 170, and the second position electrodes 160 are connected to the fifth lead wires 180 in a one-to-one correspondence.
In the above embodiment, each of the second position electrodes 160 is connected to each of the fifth lead wires 180 in a one-to-one correspondence manner, and can transmit touch position detection signals of different portions of the stress strain sensor 100 to obtain a plurality of measured values, so as to improve the detection accuracy of the stress strain sensor 100 for the touch position.
The embodiment provides a stress-strain sensing module, which comprises a detection circuit, a protective shell and a stress-strain sensor 100. The detection circuit is used for transmitting a stress-strain detection signal of the stress-strain sensor 100, and the stress-strain sensor 100 is sleeved with the protective shell, so that the stress-strain sensor 100 is prevented from being damaged due to collision. But not limited to this, the utility model discloses stress strain sensing module still can increase different functional unit according to the application environment not used, the utility model discloses do not specifically limit to this, all use the utility model discloses stress strain sensor 100's stress strain sensing module is all in the protection scope of the utility model.
This embodiment still provides an electronic equipment, include the utility model discloses a stress-strain sensing module. Electronic equipment can be a terminal equipment, like intelligent bracelet, sleep detection area etc. but not limited to this, all use the utility model discloses an electronic equipment of stress-strain sensing module is in the utility model discloses a within range.
The same or similar reference numerals in the drawings of the present embodiment correspond to the same or similar components; in the description of the present application, it is to be understood that if there is an orientation or positional relationship indicated by the terms "upper", "lower", etc. based on the orientation or positional relationship shown in the drawings, it is only for convenience of description and simplification of the description, but it is not intended to indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes and are not to be construed as limiting the present patent, and the specific meaning of the above terms will be understood by those skilled in the art according to the specific situation.
The present invention is not intended to be limited to the particular embodiments shown and described, but is to be accorded the widest scope consistent with the principles and novel features herein disclosed.
Claims (10)
1. A stress-strain sensor, comprising:
a first base layer assembly including a first substrate plate, a first electrode on one of surfaces of the first substrate plate, a piezoelectric layer on a surface of the first electrode facing away from the first substrate plate, and a second electrode on a surface of the piezoelectric layer facing away from the first electrode;
a second substrate assembly comprising an insulating layer and a shield electrode, the insulating layer comprising a first surface and a second surface opposite the first surface, the shield electrode being located at the second surface;
a second substrate sheet;
the surface of the first substrate plate provided with the first electrode is attached to the first surface, and the second substrate plate is located on the second surface.
2. The stress-strain sensor of claim 1,
the first base layer assembly comprises a third surface facing the second base layer assembly, and the insulating layer is formed on the third surface through any one of a yellow light process, a screen printing process and a coating process.
3. The stress-strain sensor of claim 1,
the second substrate board is connected with the insulating layer in a pressing mode.
4. The stress-strain sensor of claim 1,
in a direction perpendicular to a surface of the first substrate plate on which the first electrode is disposed, the shielding electrode and the second electrode form an orthographic projection on the surface, and the orthographic projection corresponding to the shielding electrode completely covers the orthographic projection corresponding to the second electrode.
5. The stress-strain sensor of claim 1,
the first electrode is grounded, and along a direction perpendicular to the first surface, the first electrode and the second electrode form an orthographic projection on the first surface, and the orthographic projection corresponding to the first electrode completely covers the orthographic projection corresponding to the second electrode.
6. The stress-strain sensor of claim 1,
the stress strain sensor is in a strip shape;
the number of the first electrodes is multiple, the number of the piezoelectric layers is the same as that of the first electrodes, the number of the second electrodes is the same as that of the first electrodes, and the number of the shielding electrodes is the same as that of the first electrodes;
the first electrodes are arranged in a row along the length direction of the stress-strain sensor, and one piezoelectric layer, one second electrode and one shielding electrode are correspondingly arranged between each first electrode and the second substrate plate respectively.
7. The stress-strain sensor of claim 6,
the stress-strain sensor also comprises first lead-out wires, second lead-out wires and third lead-out wires, the number of the second lead-out wires is the same as that of the second electrodes, and the first lead-out wires, the second lead-out wires and the third lead-out wires are all positioned in a gap formed between the first substrate plate and the second substrate plate;
the first electrodes are connected in series by using the first lead-out wires, the second electrodes are connected with the second lead-out wires in a one-to-one correspondence manner, and the shielding electrodes are connected in series by using a third lead-out wire.
8. The stress-strain sensor of claim 1,
the stress-strain sensor further comprises an adhesive layer, and the adhesive layer is located between the insulating layer and the second substrate plate, so that one side of the adhesive layer is adhered to the second surface, and the other opposite side of the adhesive layer is adhered to the surface of the second substrate plate facing the insulating layer.
9. A stress-strain sensing module, comprising:
the stress-strain sensor of any one of claims 1 to 8.
10. An electronic device, comprising:
the stress-strain sensing module of claim 9.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202020223419.4U CN211626765U (en) | 2020-02-28 | 2020-02-28 | Stress-strain sensor, stress-strain sensing module and electronic equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202020223419.4U CN211626765U (en) | 2020-02-28 | 2020-02-28 | Stress-strain sensor, stress-strain sensing module and electronic equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
CN211626765U true CN211626765U (en) | 2020-10-02 |
Family
ID=72620806
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202020223419.4U Active CN211626765U (en) | 2020-02-28 | 2020-02-28 | Stress-strain sensor, stress-strain sensing module and electronic equipment |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN211626765U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115942858A (en) * | 2023-03-10 | 2023-04-07 | 荣耀终端有限公司 | terminal device |
-
2020
- 2020-02-28 CN CN202020223419.4U patent/CN211626765U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115942858A (en) * | 2023-03-10 | 2023-04-07 | 荣耀终端有限公司 | terminal device |
CN115942858B (en) * | 2023-03-10 | 2023-10-20 | 荣耀终端有限公司 | terminal device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101066672B1 (en) | Array type capacitance sensor | |
US7430925B2 (en) | Hybrid tactile sensor | |
US9423309B2 (en) | Pressure sensor, method for manufacture thereof, and pressure detection module | |
US7340952B2 (en) | Capacitive humidity sensor | |
TWI545472B (en) | Pressure detecting unit and information input device having pressure detecting unit | |
CN108235748B (en) | Piezoresistive sensor, pressure detection device, and electronic apparatus | |
CN206378838U (en) | Pressure-sensing module, pressure touch sensing system | |
CN108291796B (en) | Piezoelectric deflection sensor and detection device | |
CN214154935U (en) | Electronic assembly | |
CN109860384B (en) | Strain gauge driving piezoelectric device | |
US20220214232A1 (en) | Capacitance sensor | |
CN211626765U (en) | Stress-strain sensor, stress-strain sensing module and electronic equipment | |
JP4881041B2 (en) | Magnetic sensor device | |
CN113324682A (en) | Stress-strain sensor, stress-strain sensing module and electronic equipment | |
CN211504471U (en) | Pressure sensor, pressure sensing module and electronic equipment | |
CN113157138B (en) | Touch module, manufacturing method thereof and electronic equipment | |
US20240280422A1 (en) | Shear force sensor, and detection unit for shear force sensor | |
CN114396862A (en) | Capacitance displacement sensor and flexible probe and flexible connecting wire thereof | |
US20110157845A1 (en) | Touch panel | |
CN113125053A (en) | Pressure sensor, pressure sensing module and electronic equipment | |
CN112558822A (en) | Touch device, electronic equipment and manufacturing method of touch device | |
JP3308368B2 (en) | 3-axis piezoelectric acceleration sensor | |
CN209928407U (en) | Touch module device and electronic equipment | |
CN212541302U (en) | Three-dimensional sensing panel and electronic device | |
CN216491055U (en) | Piezoelectric module and electronic equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |