CN211626680U - Terahertz detector based on cross-coupling structure - Google Patents
Terahertz detector based on cross-coupling structure Download PDFInfo
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- CN211626680U CN211626680U CN201922238250.XU CN201922238250U CN211626680U CN 211626680 U CN211626680 U CN 211626680U CN 201922238250 U CN201922238250 U CN 201922238250U CN 211626680 U CN211626680 U CN 211626680U
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Abstract
The utility model discloses a terahertz detector based on cross coupling structure, including the antenna, the antenna is respectively through a matching network, No. two matching network are connected to a MOS field effect transistor grid, No. two MOS field effect transistor grids, a MOS field effect transistor and No. two MOS field effect transistor's source electrode all ground connection, a MOS field effect transistor drain electrode and No. two MOS field effect transistor drain electrodes are respectively through No. four microstrip transmission lines, No. eight microstrip transmission line connection to signal output port, a MOS field effect transistor drain electrode is through No. two MOS field effect transistor grids of an electric capacity connection, No. two MOS field effect transistor drain electrodes are through No. two electric capacity connection No. one MOS field effect transistor grid. The utility model discloses realize that the antenna transmits to the power maximize between the transistor.
Description
Technical Field
The utility model relates to a terahertz wave detects technical field, and more specifically says, relates to a terahertz detector based on cross coupling structure.
Background
Terahertz technology is considered to be "one of ten major technologies that change the world in the future". At present, the international research level on the electromagnetic wave technology on two sides of the terahertz radiation wave band, namely the infrared technology and the microwave technology, is already mature. Due to the lack of effective terahertz radiation generation and detection means, and this band is neither completely amenable to processing with optical theory nor to study with microwave electronics theory. Currently, the scientific community has limited knowledge of this band, so thz is the last frequency window in the electromagnetic spectrum that has not been fully studied, so that it is known in the industry as the "terahertz gap" in the electromagnetic spectrum. Over the last two decades, with the successive emergence and rapid development of terahertz radiation sources and terahertz detectors, the research and application of terahertz technology have been developed rapidly. Due to the fact that quantum energy of terahertz radiation is low, the signal-to-noise ratio is high, the frequency spectrum is extremely wide, and the terahertz radiation has a series of special properties, and has significant scientific value and practical prospects in the fields of basic research, nuclear technology, medical diagnosis, safety detection, radio astronomy, object imaging, broadband mobile communication, national defense and military and the like. Meanwhile, engineering application potential in other aspects is also concerned.
At present, a field effect transistor-based probe structure has been proposed internationally, which transmits a terahertz wave signal received by an on-chip patch antenna to a source of an N-type metal-oxide-semiconductor field effect transistor (NMOSFET), and connects a fixed potential to the antenna and a gate of the N-type metal-oxide-semiconductor field effect transistor, respectively. In addition, in order to achieve good impedance matching between the antenna and the transistor, an impedance matching network is designed between the antenna and the transistor. In order to eliminate the influence of bias voltage on the impedance matching of the antenna and the transistor, a quarter-wavelength transmission line is connected to a bias terminal, and the structure has the defects that a single transistor has limited amplitude and frequency response to terahertz, the terahertz signal cannot be detected at higher frequency, and the design of an impedance matching network is not suitable for high frequency.
In summary, in order to overcome the problem that the response frequency of a single field effect transistor to the terahertz signal is not high, a field effect transistor structure with a cross-coupling structure is urgently needed to be provided, the problem that the response to the terahertz signal is not high is solved, and the higher response to the terahertz signal is realized.
SUMMERY OF THE UTILITY MODEL
The utility model aims at overcoming not enough among the prior art, provide a terahertz detector based on cross-coupling structure, adopt the patch antenna to be arranged in receiving terahertz wave signal and transmitting to the field effect transistor through microstrip transmission line impedance matching network. In order to maximize the power of the terahertz signal transmitted from the antenna to the field effect transistor, an impedance matching network composed of a microstrip transmission line is arranged between the antenna and the transistor. Because the real part and the imaginary part of the gate input impedance of the field effect transistor are large, and the input impedance at the antenna feed position is far smaller than the gate input impedance of the transistor, the T-shaped impedance matching network which is arranged between the antenna and the transistor and consists of three sections of microstrip transmission lines can realize the impedance matching of the antenna and the transistor through the three times of impedance transformation, thereby realizing the maximum power transmission between the antenna and the transistor.
The purpose of the utility model is realized through the following technical scheme.
The utility model discloses terahertz detector based on cross coupling structure, which comprises an antenna, the antenna is connected to a MOS field effect transistor grid, No. two MOS field effect transistor grids through a matching network, No. two matching networks respectively, a MOS field effect transistor and No. two MOS field effect transistor's source electrode all ground connection, a MOS field effect transistor drain electrode and No. two MOS field effect transistor drain electrodes are connected to signal output port through No. four microstrip transmission lines, No. eight microstrip transmission lines respectively, a MOS field effect transistor drain electrode is connected No. two MOS field effect transistor grids through an electric capacity, No. two MOS field effect transistor drain electrodes are connected No. one MOS field effect transistor grid through No. two electric capacities.
The antenna adopts a differential patch antenna.
The fourth microstrip transmission line and the eighth microstrip transmission line both adopt the same quarter-wavelength transmission line, and have the same impedance characteristic and length.
The first matching network comprises a first microstrip transmission line, a second microstrip transmission line and a third microstrip transmission line, one end of the first microstrip transmission line is connected with the antenna, the other end of the first microstrip transmission line is grounded through the second microstrip transmission line, one end of the third microstrip transmission line is connected with a grid electrode of the first MOS field effect transistor, and the other end of the third microstrip transmission line is grounded through the second microstrip transmission line.
The second matching network comprises a fifth microstrip transmission line, a sixth microstrip transmission line and a seventh microstrip transmission line, one end of the fifth microstrip transmission line is connected with the antenna, the other end of the fifth microstrip transmission line is grounded through the sixth microstrip transmission line, one end of the seventh microstrip transmission line is connected with the grid of the second MOS field effect transistor, and the other end of the seventh microstrip transmission line is grounded through the sixth microstrip transmission line.
The impedance characteristics and the lengths of the first microstrip transmission line and the fifth microstrip transmission line are the same, the impedance characteristics and the lengths of the second microstrip transmission line and the sixth microstrip transmission line are the same, and the impedance characteristics and the lengths of the third microstrip transmission line and the seventh microstrip transmission line are the same.
The first MOS field effect transistor and the second MOS field effect transistor are the same and have the same size.
The first capacitor and the second capacitor are the same, and the capacitance values are the same.
Compared with the prior art, the utility model discloses a beneficial effect that technical scheme brought is:
(1) the utility model discloses a field effect transistor detector of parallelly connected geminate transistor structure superposes the twice of terahertz signal rectification to improve the terahertz signal frequency that field effect transistor can produce the response, increase detection frequency.
(2) The utility model discloses the impedance matching network of design between well antenna and the N type metal-oxide-semiconductor field effect transistor can improve terahertz wave signal's power transmission efficiency, plays the effect that the increase was surveyed the responsivity.
(3) The utility model discloses can effectively solve the problem that the detector is not high to terahertz signal responsivity, realize the effect of terahertz detector to terahertz signal's higher response now.
Drawings
Fig. 1 is the circuit diagram of the terahertz detector based on the cross-coupling structure.
Reference numerals: TL 1-a first microstrip transmission line, TL 2-a second microstrip transmission line, TL 3-a third microstrip transmission line, TL 4-a fourth microstrip transmission line, TL 5-a fifth microstrip transmission line, TL 6-a sixth microstrip transmission line, TL 7-a seventh microstrip transmission line, TL 8-an eighth microstrip transmission line, M1-a first MOS field effect transistor, M2-a second MOS field effect transistor, C1-a first capacitor and C2 a second capacitor.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to specific examples below.
As shown in fig. 1, the terahertz detector based on the cross-coupled structure of the present invention includes an antenna, a matching network, and a pair of N-type metal-oxide-semiconductor field effect transistors (a MOS field effect transistor M1 and a second MOS field effect transistor M2). Specifically, the antenna is connected to a gate of a first MOS field effect transistor M1 and a gate of a second MOS field effect transistor M2 through a first matching network and a second matching network respectively, sources of the first MOS field effect transistor M1 and the second MOS field effect transistor M2 are both grounded, a drain of the first MOS field effect transistor M1 and a drain of the second MOS field effect transistor M2 are connected to a signal output port through a fourth microstrip transmission line TL4 and an eighth microstrip transmission line TL8 respectively, a drain of the first MOS field effect transistor M1 is connected to a gate of the second MOS field effect transistor M2 through a first capacitor C1, and a drain of the second MOS field effect transistor M2 is connected to a gate of the first MOS field effect transistor M1 through a second capacitor C2.
The antenna adopts a differential patch antenna, and the patch antenna is selected because the structure is simple, the terahertz signal capturing function can be well realized, the bandwidth is wide, and the frequency offset fault-tolerant rate of the terahertz signal source in the actual measurement process is high. The antenna is used for receiving terahertz wave signals, the antenna transmits the received terahertz wave signals to the gates of the pair of N-type metal-oxide-semiconductor field effect transistors, and in order to enable the power of the terahertz wave signals received by the antenna to be transmitted to the pair of N-type metal-oxide-semiconductor field effect transistors to the maximum, an impedance matching network is added between the antenna and the gates of the pair of N-type metal-oxide-semiconductor field effect transistors, and the power transmission between the antenna and the two N-type metal-oxide-semiconductor field effect transistors is enabled to be the maximum. The external power supply is connected with the antenna for biasing so as to ensure that the transistor works normally.
The first matching network comprises a first microstrip transmission line TL1, a second microstrip transmission line TL2 and a third microstrip transmission line TL3, one end of the first microstrip transmission line TL1 is connected with an antenna, the other end of the first microstrip transmission line TL1 is grounded through the second microstrip transmission line TL2, one end of the third microstrip transmission line TL3 is connected with a first MOS field effect transistor M1 grid electrode, and the other end of the third microstrip transmission line TL2 is grounded through the second microstrip transmission line TL 2.
The second matching network comprises a fifth microstrip transmission line TL5, a sixth microstrip transmission line TL6 and a seventh microstrip transmission line TL7, one end of the fifth microstrip transmission line TL5 is connected with an antenna, the other end of the fifth microstrip transmission line TL5 is grounded through the sixth microstrip transmission line TL6, one end of the seventh microstrip transmission line TL7 is connected with a second MOS field effect transistor M2 grid electrode, and the other end of the seventh microstrip transmission line TL7 is grounded through the sixth microstrip transmission line TL 6.
Impedance characteristics and length of a first microstrip transmission line TL1 and a fifth microstrip transmission line TL5 are the same, impedance characteristics and length of a second microstrip transmission line TL2 and a sixth microstrip transmission line TL6 are the same, and impedance characteristics and length of a third microstrip transmission line TL3 and a seventh microstrip transmission line TL7 are the same.
The four-number microstrip transmission line TL4 and the eight-number microstrip transmission line TL8 both adopt the same quarter-wavelength transmission line, and have the same impedance characteristic and length. The first MOS field effect transistor M1 and the second MOS field effect transistor M2 are the same and have the same size. The first capacitor C1 and the second capacitor C2 are the same, and the capacitance values are equal.
The utility model discloses terahertz detector's core part is exactly two N type metal-oxide-semiconductor field effect transistors based on cross-coupling structure, and when the THz signal of antenna coupling back in transmitting the transistor from the impedance matching network, the nonlinear rectification of transistor channel can become the more weak direct current signal with the THz signal rectification and read out, and cross-coupling structure can strengthen this weak signal to the realization is surveyed terahertz signal's high response.
The utility model discloses terahertz detector selects for use two unanimous N type metal-oxide-semiconductor field effect transistors of parameter as detecting element now based on cross-coupling structure, thereby obtains the detected signal through the nonlinear rectification of its channel to cross-coupling structure has realized the rectification to two differential signal, has improved the signal strength after the rectification, has realized the response of higher terahertz signal now. Due to the dc characteristic of the bias signal, the bias applied to the antenna is the gate bias of the two transistors, which causes the transistor channel to open and operate normally. The capacitance at the drains of the two transistors is used to isolate the effect of the dc bias on the drains, and a quarter-wave transmission line is connected to the drains of the two transistors to eliminate the effect of the ac signal on the output signal.
Although the present invention has been described with reference to the accompanying drawings, the present invention is not limited to the above specific functions and operations, and the above specific embodiments are only illustrative and not restrictive, and those skilled in the art can make many forms without departing from the spirit and scope of the present invention, which is within the protection scope of the present invention.
Claims (8)
1. A terahertz detector based on a cross-coupling structure comprises an antenna and is characterized in that, the antenna is respectively connected with the grid electrode of a first MOS field effect transistor (M1) and the grid electrode of a second MOS field effect transistor (M2) through a first matching network and a second matching network, the sources of the first MOS field effect transistor (M1) and the second MOS field effect transistor (M2) are grounded, the drain of the first MOS field effect transistor (M1) and the drain of the second MOS field effect transistor (M2) are respectively connected to the signal output port through a fourth microstrip transmission line (TL4) and an eighth microstrip transmission line (TL8), the drain of the first MOS field effect transistor (M1) is connected with the gate of the second MOS field effect transistor (M2) through a first capacitor (C1), the drain of the second MOS field effect transistor (M2) is connected with the gate of the first MOS field effect transistor (M1) through a second capacitor (C2).
2. The terahertz detector based on the cross-coupling structure, according to claim 1, wherein the antenna is a differential patch antenna.
3. The terahertz detector based on the cross-coupling structure, according to claim 1, wherein the four-number microstrip transmission line (TL4) and the eight-number microstrip transmission line (TL8) both use the same quarter-wavelength transmission line, and have the same impedance characteristics and length.
4. The terahertz detector based on the cross-coupling structure, as claimed in claim 1, wherein the first matching network comprises a first microstrip transmission line (TL1), a second microstrip transmission line (TL2), and a third microstrip transmission line (TL3), wherein one end of the first microstrip transmission line (TL1) is connected to the antenna, the other end of the first microstrip transmission line is grounded via the second microstrip transmission line (TL2), one end of the third microstrip transmission line (TL3) is connected to the gate of the first MOS field effect transistor (M1), and the other end of the third microstrip transmission line is grounded via the second microstrip transmission line (TL 2).
5. The terahertz detector based on the cross-coupling structure, according to claim 1, wherein the second matching network comprises a fifth microstrip transmission line (TL5), a sixth microstrip transmission line (TL6) and a seventh microstrip transmission line (TL7), one end of the fifth microstrip transmission line (TL5) is connected with an antenna, the other end of the fifth microstrip transmission line is grounded through the sixth microstrip transmission line (TL6), one end of the seventh microstrip transmission line (TL7) is connected with a gate of a second MOS field effect transistor (M2), and the other end of the seventh microstrip transmission line is grounded through the sixth microstrip transmission line (TL 6).
6. The terahertz detector based on the cross-coupling structure, according to claim 4, wherein the impedance characteristics and the lengths of the first microstrip transmission line (TL1) and the fifth microstrip transmission line (TL5) are the same, the impedance characteristics and the lengths of the second microstrip transmission line (TL2) and the sixth microstrip transmission line (TL6) are the same, and the impedance characteristics and the lengths of the third microstrip transmission line (TL3) and the seventh microstrip transmission line (TL7) are the same.
7. The terahertz detector based on the cross-coupled structure, according to claim 4 or 5, wherein the first MOS field effect transistor (M1) and the second MOS field effect transistor (M2) are the same and have the same size.
8. The terahertz detector based on the cross-coupled structure, according to claim 4 or 5, wherein the first capacitor (C1) and the second capacitor (C2) are the same, and the capacitance values are equal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201922238250.XU CN211626680U (en) | 2019-12-13 | 2019-12-13 | Terahertz detector based on cross-coupling structure |
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| CN201922238250.XU CN211626680U (en) | 2019-12-13 | 2019-12-13 | Terahertz detector based on cross-coupling structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114725676A (en) * | 2021-01-04 | 2022-07-08 | 中国科学院沈阳自动化研究所 | Differential output terahertz wave detector |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114725676A (en) * | 2021-01-04 | 2022-07-08 | 中国科学院沈阳自动化研究所 | Differential output terahertz wave detector |
| CN114725676B (en) * | 2021-01-04 | 2024-08-09 | 中国科学院沈阳自动化研究所 | Differential output terahertz wave detector |
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