CN211600261U - High-power semiconductor laser lighting device - Google Patents
High-power semiconductor laser lighting device Download PDFInfo
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- CN211600261U CN211600261U CN202020009690.8U CN202020009690U CN211600261U CN 211600261 U CN211600261 U CN 211600261U CN 202020009690 U CN202020009690 U CN 202020009690U CN 211600261 U CN211600261 U CN 211600261U
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Abstract
The utility model discloses a high power semiconductor laser lighting device, laser lighting device by the heat dissipation base plate and arrange in light source module on the heat dissipation base plate constitutes, light source module has semiconductor laser group, off-axis parabolic reflector, laser dodging mirror, plane mirror, fluorescence pottery, fluorescence ceramic heating panel and secondary lens, the emergent beam of semiconductor laser group passes through in proper order the off-axis parabolic reflector the laser dodging mirror the plane mirror reachs fluorescence pottery, the emergent beam arouses fluorescence pottery is in order to produce exciting beam, exciting beam passes through the secondary lens is outwards emergent, fluorescence pottery's the back has fluorescence ceramic heating panel. The beneficial effects of the utility model reside in that: the semiconductor laser group can be converged and folded, the using number of components of the whole lighting device is reduced, the light loss is low, the structure is simple and easy to adjust, and the reliability is high.
Description
Technical Field
The utility model relates to a high power semiconductor laser lighting device.
Background
Severe flying conditions such as cloudy, heavy fog, severe environment, poor lighting conditions and the like can bring great potential safety hazards to the work of landing, gliding, rescuing and the like of the airplane. The existing landing sliding lamp and strong light searching lamp mainly adopt LED or xenon lamp, the LED light source is high-efficient, stable, small in size but limited in brightness, the xenon lamp is high in brightness but large in starting voltage and light source size, the airplane is strictly limited in weight and space, and the design difficulty of the external illumination is greatly increased. The semiconductor laser has the advantages of good monochromaticity, strong directivity, high brightness, small volume, long service life and the like, so that the laser lighting device using the semiconductor laser as a light source has more concentrated light beams, stronger penetrating power, smaller volume and more compact structure, and can convert the external lighting to highly concentrated miniaturization.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is to adopt LED or xenon lamp among the prior art, provide a novel high power semiconductor laser lighting device.
In order to realize the purpose, the technical scheme of the utility model is as follows: the utility model provides a high power semiconductor laser lighting device, laser lighting device by the heat dissipation base plate and arrange in light source module on the heat dissipation base plate constitutes, the light source module has semiconductor laser group, off-axis parabolic reflector, laser dodging mirror, plane reflector, fluorescent ceramic heating panel and secondary light distribution mirror, the emergent beam of semiconductor laser group passes through in proper order the off-axis parabolic reflector the laser dodging mirror the plane reflector reachs fluorescent ceramic, emergent beam arouses fluorescent ceramic is in order to produce exciting beam, exciting beam passes through secondary light distribution mirror outwards is emergent, fluorescent ceramic's the back has fluorescent ceramic heating panel.
As a preferred scheme of the high-power semiconductor laser lighting device, the semiconductor laser group consists of 3 semiconductor lasers BANK, and the laser emission wavelength is 400-460 nm.
As a preferable scheme of the high-power semiconductor laser lighting device, the surface of the off-axis parabolic reflector is plated with a high-reflection film.
As a preferable proposal of the high-power semiconductor laser lighting device, the surface of the plane reflector is plated with a high-reflection film.
As a preferable scheme of the high-power semiconductor laser lighting device, the laser dodging mirror is a micro-lens array or ground glass.
As a preferable proposal of the high-power semiconductor laser lighting device, the secondary light distribution mirror is a paraboloid reflector plated with a high-reflection film.
Compared with the prior art, the beneficial effects of the utility model reside in at least: the semiconductor laser group can be converged and folded, the using number of components of the whole lighting device is reduced, the light loss is low, the structure is simple and easy to adjust, and the reliability is high.
In addition to the technical problems, technical features constituting technical aspects, and advantageous effects brought by the technical features of the technical aspects described above, other technical problems, technical features included in the technical aspects, and advantageous effects brought by the technical features solved by the present invention will be described in further detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail below with reference to the accompanying drawings by way of specific embodiments. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. Furthermore, the technical features mentioned in the embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, a high power semiconductor laser lighting device is shown.
The laser lighting device is composed of a heat dissipation substrate and a light source module arranged on the heat dissipation substrate.
In this embodiment, the number of the light source modules is 20.
The light source module comprises a semiconductor laser group 1, an off-axis parabolic reflector 2, a laser dodging mirror 3, a plane reflector 4, fluorescent ceramic 5, a fluorescent ceramic heat dissipation plate 6 and a secondary light distribution mirror 7. The semiconductor laser group consists of 3 semiconductor lasers BANK. The semiconductor laser groups 1 in each light source module have the same wavelength, and the corresponding off-axis parabolic reflectors 2 are adopted to realize the convergence and the deflection of laser beams. And homogenizing the energy of the laser spots focused on the surface of the fluorescent ceramic 5 by using the laser dodging mirror 3. The laser beam is then reflected to the surface of the fluorescent ceramic 5 via the plane mirror 4. The laser excites the fluorescent ceramic 5 to mix white light, and finally the light is reflected by the secondary light distribution lens 7. All the light source modules can generate hundred million cd of strong light for emergence.
For each group of semiconductor laser groups 1, in order to reduce the number of volume optical components of the lighting device and reduce the surface laser power density of the fluorescent ceramic 5, the off-axis parabolic reflector 2 is adopted to converge and turn laser beams of the semiconductor laser groups 1.
In order to solve the occlusion and to minimize the size of the reflector, the off-axis parabolic reflector 2 is used instead of a one-piece parabolic reflector, the off-axis parabolic reflector 2 being part of the base parabolic reflector.
All the laser light incidence surfaces of the optical elements are plated with antireflection films, and the light beam reflection surfaces are plated with high-reflection films, so that the light energy loss is reduced, and the light emitting efficiency of the lighting device is improved.
In order to reduce the length of a laser focusing light path and reduce the volume of the laser lighting device, the 45-degree plane reflector 4 is adopted to bend the converged laser beam by 90 degrees to the surface of the fluorescent ceramic 5.
The laser light homogenizing mirror 3 is made of a micro-lens array or ground glass, laser spots on the surface of the fluorescent ceramic 5 are homogenized, and the laser power density on the surface of the fluorescent ceramic is reduced.
And finally, the secondary lens 7 adopts a paraboloidal reflector, and the mixed white light is emitted through light distribution of the paraboloidal reflector.
The above description is only intended to represent embodiments of the present invention, which are more specific and detailed, but not to be construed as limiting the scope of the claims. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (6)
1. The utility model provides a high power semiconductor laser lighting device, its characterized in that, laser lighting device by the heat dissipation base plate and arrange in light source module on the heat dissipation base plate constitutes, light source module has semiconductor laser group, off-axis parabolic reflector, laser dodging mirror, plane reflector, fluorescence pottery heating panel and secondary lens, semiconductor laser group's the light beam that exits passes through in proper order off-axis parabolic reflector the laser dodging mirror the plane reflector reachs fluorescence pottery, it excites to exit the light beam fluorescence pottery is in order to produce the excitation beam, the excitation beam passes through the secondary lens is outwards emergent, fluorescence pottery's the back has fluorescence pottery heating panel.
2. The high-power semiconductor laser lighting device according to claim 1, wherein said semiconductor laser group is composed of 3 semiconductor lasers BANK, and the laser emission wavelength is 400-460 nm.
3. The high power semiconductor laser illuminator according to claim 1, wherein the surface of the off-axis parabolic reflector is coated with a high reflective film.
4. The high-power semiconductor laser lighting device according to claim 1, wherein the surface of said plane reflector is coated with a high-reflection film.
5. The high-power semiconductor laser lighting device according to claim 1, wherein the laser dodging mirror is a micro lens array or ground glass.
6. The high power semiconductor laser illuminator according to claim 1, wherein the secondary lens is a parabolic reflector coated with a high reflective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020009690.8U CN211600261U (en) | 2020-01-03 | 2020-01-03 | High-power semiconductor laser lighting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020009690.8U CN211600261U (en) | 2020-01-03 | 2020-01-03 | High-power semiconductor laser lighting device |
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| Publication Number | Publication Date |
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| CN211600261U true CN211600261U (en) | 2020-09-29 |
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| CN202020009690.8U Active CN211600261U (en) | 2020-01-03 | 2020-01-03 | High-power semiconductor laser lighting device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114216100A (en) * | 2021-11-19 | 2022-03-22 | 广州旭福光电科技有限公司 | Transmission type laser lighting module, light homogenizing method and application |
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2020
- 2020-01-03 CN CN202020009690.8U patent/CN211600261U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114216100A (en) * | 2021-11-19 | 2022-03-22 | 广州旭福光电科技有限公司 | Transmission type laser lighting module, light homogenizing method and application |
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