CN211578756U

CN211578756U - Display panel

Info

Publication number: CN211578756U
Application number: CN202020412214.0U
Authority: CN
Inventors: 陈宇怀; 黄志杰; 苏智昱
Original assignee: Fujian Huajiacai Co Ltd
Current assignee: Fujian Huajiacai Co Ltd
Priority date: 2020-03-27
Filing date: 2020-03-27
Publication date: 2020-09-25
Anticipated expiration: 2030-03-27

Abstract

The utility model discloses a display panel, display panel includes concave-convex structure, concave-convex structure is in the surface of inside rete, and concave-convex structure is used for forming the diffuse reflection with incidenting the light in the display panel. The technical scheme can improve the picture display effect of the display panel, improve the luminous efficiency of the organic luminous layer, prolong the service life of the display panel and improve the contrast of the display panel.

Description

Display panel

Technical Field

The utility model relates to a microelectronics technical field especially relates to a display panel.

Background

With the development of display technology, various new technologies are emerging, and the transparent display technology is receiving more and more attention due to the characteristic of the transparent display panel and its unique application. The AMOLED panel has the self-luminous characteristic, so that more possibilities are available for transparent display, but due to the fact that the AMOLED panel is complex in circuit structure, the contrast of the transparent display panel is further reduced by reflection of ambient light, the ambient reflected light can be filtered by arranging the circular polarizer on the AMOLED packaging substrate, but at present, the light transmittance of the circular polarizer is not more than 50%, the transparency of the panel is greatly reduced, and the effect of high transparency cannot be achieved under the condition that pixels do not display. How to improve the display effect of the panel without sacrificing the transparency of the panel needs to be further solved.

SUMMERY OF THE UTILITY MODEL

Therefore, it is desirable to provide a display panel that solves the problem of insufficient transparency of the display panel.

To achieve the above object, the inventors provide a display panel comprising the steps of:

manufacturing an inner film layer of the display panel;

and manufacturing a concave-convex structure on the internal film layer, wherein the concave-convex structure is used for forming diffuse reflection on light rays entering the display panel.

Further, when the inner film layer of the display panel is manufactured, the method further comprises the following steps:

manufacturing a first insulating layer in the inner film layer, and manufacturing a concave-convex structure on the surface of the first insulating layer; or:

manufacturing a first metal layer in the internal film layer, and manufacturing a concave-convex structure on the surface of the first metal layer; or:

manufacturing a second insulating layer in the internal film layer, and manufacturing a concave-convex structure on the surface of the second insulating layer; or:

manufacturing a second metal layer in the internal film layer, and manufacturing a concave-convex structure on the surface of the second metal layer; or:

manufacturing a pixel definition layer in the internal film layer, and manufacturing a concave-convex structure on the surface of the pixel definition layer; or:

and manufacturing a cathode in the internal film layer, and manufacturing a concave-convex structure on the surface of the cathode.

Further, the manufacturing of the concave-convex structure comprises the following steps:

coating a light resistor on the internal film layer, and patterning the light resistor by using a mask plate with a semi-light-transmitting area, wherein the mask plate is also provided with a light-transmitting area or a shading area;

after patterning, the semi-transparent area corresponds to a concave area of the concave-convex structure on the internal film layer;

and etching the inner film layer of the semi-light-transmitting area by using the photoresist as a mask to obtain the concave-convex structure.

Further, the method also comprises the following steps:

the light transmitting area or the light shading area corresponds to the hole to be manufactured on the inner film layer;

and etching the inner film layer in the light transmitting area or the light shielding area by using the light resistance and the inner film layer as masks to obtain holes.

Further, the display panel is a transparent display panel.

Furthermore, a cover plate is arranged on the upper cover of the display panel, and an antireflection film is arranged on one side of the cover plate.

Further, the display panel comprises a concave-convex structure, the concave-convex structure is arranged on the surface of the inner film layer, and the concave-convex structure is used for forming diffuse reflection on light rays incident into the display panel.

Further, the inner film layer comprises: a first insulating layer, a first metal layer, a second insulating layer, a second metal layer, a pixel defining layer or a cathode;

a concave-convex structure is arranged on the surface of the first insulating layer; or: a concave-convex structure is arranged on the surface of the first metal layer; or: a concave-convex structure is arranged on the surface of the second insulating layer; or: a concave-convex structure is arranged on the surface of the second metal layer; or: a concave-convex structure is arranged on the surface of the pixel definition layer; or: the surface of the cathode is provided with a concave-convex structure.

Further, the concave-convex structure is arranged in a projection area on the surface of the inner film layer.

Further, the display panel is a transparent display panel.

Be different from prior art, above-mentioned technical scheme is through setting up concave-convex structure on display panel's inside rete for form the diffuse reflection with specular reflection light, can improve display panel's picture display effect, improve organic luminescent layer luminous efficacy, improve display panel's life, improve display panel's contrast.

Drawings

FIG. 1 is a schematic cross-sectional view illustrating a first insulating layer plated on a substrate according to the present embodiment;

FIG. 2 is a schematic cross-sectional view illustrating a first insulating layer patterned by a mask plate according to the present embodiment;

fig. 3 is a schematic structural diagram of a concave-convex structure on a first insulating layer according to the present embodiment;

FIG. 4 is a schematic cross-sectional view illustrating a first metal layer patterned by using a halftone mask according to the present embodiment;

FIG. 5 is a schematic structural diagram of a photoresist on the concave-convex structure of the first metal layer according to the present embodiment;

FIG. 6 is a schematic cross-sectional view illustrating the etching of the excess first metal layer according to the present embodiment;

FIG. 7 is a schematic cross-sectional view illustrating the removal of the photoresist on the recess region of the first metal layer according to the present embodiment;

fig. 8 is a schematic cross-sectional view illustrating a concave-convex structure of the first metal layer according to this embodiment;

fig. 9 is a schematic cross-sectional structure diagram of the first gate and the second gate in this embodiment;

FIG. 10 is a schematic cross-sectional view illustrating a second insulating layer of the present embodiment;

fig. 11 is a schematic cross-sectional structure diagram of the active layer fabricated in this embodiment;

FIG. 12 is a schematic cross-sectional view illustrating the fabrication of a second metal layer according to the present embodiment;

FIG. 13 is a schematic cross-sectional view illustrating a third insulating layer according to the present embodiment;

FIG. 14 is a schematic cross-sectional view illustrating a fourth insulating layer according to another embodiment;

FIG. 15 is a schematic cross-sectional view illustrating the fabrication of an anode according to this embodiment;

fig. 16 is a schematic cross-sectional structure diagram illustrating patterning of a pixel definition layer material by using a halftone mask plate according to the embodiment;

fig. 17 is a schematic cross-sectional structure view of a concave-convex structure of the pixel defining layer according to the embodiment;

FIG. 18 is a schematic cross-sectional view illustrating the fabrication of a pixel definition layer according to the present embodiment;

FIG. 19 is a schematic cross-sectional view illustrating a bump layer patterned on a substrate by using a mask plate according to the present embodiment;

FIG. 20 is a schematic structural view of the bump layer according to the present embodiment;

FIG. 21 is a schematic structural diagram illustrating the formation of a bump layer according to the present embodiment;

FIG. 22 is a schematic cross-sectional view illustrating the fabrication of an organic light-emitting layer according to the present embodiment;

FIG. 23 is a schematic cross-sectional view illustrating a cathode fabricated in this embodiment;

fig. 24 is a schematic cross-sectional view illustrating a package cover plate and an antireflection film fabricated according to the present embodiment;

fig. 25 shows the refractive index of the antireflection film material according to the present embodiment;

fig. 26 is a view showing the refractive index of the antireflection film according to the present embodiment;

fig. 27 is a reflection spectrum of a single antireflection film and a multilayer antireflection film according to the present embodiment;

fig. 28 is a reflection diagram of light from a multilayer antireflection film and a substrate according to the present embodiment.

Description of reference numerals:

1. a substrate;

2. a first insulating layer;

3. a first metal layer;

31. a first gate electrode;

32. a second gate electrode;

4. a second insulating layer;

5. a first active layer;

6. a second active layer;

7. a second metal layer;

71. a first source electrode;

72. a first drain electrode;

73. a second source electrode;

74. a second drain electrode;

8. a third insulating layer;

9. an anode;

10. a pixel defining layer;

11. an organic light emitting layer;

12. a raised layer;

13. a cathode;

14. a transmission window;

15. a fourth insulating layer;

16. packaging the cover plate;

17. an antireflection film;

A. a relief structure;

a1, recessed area;

a2, raised areas;

B. a halftone mask plate;

b1, a light-transmitting area;

b2, a semi-transparent area;

b3, a shading area;

C. a mask plate;

c1, a light-transmitting area of the mask plate;

c2, a shading area of the mask plate.

Detailed Description

To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.

Referring to fig. 1 to 28, the present embodiment provides a method for manufacturing a display panel, which can be manufactured on a substrate, such as glass, transparent plastic, and metal foil, which are commonly used in the conventional manufacturing process. The concave-convex structure is used for forming diffuse reflection of light entering the display panel, so that the picture display effect of the display panel can be improved, the luminous efficiency of the organic light-emitting layer is improved, the service life of the display panel is prolonged, and the contrast of the display panel is improved.

Specifically, the method comprises the following steps: a Thin Film Transistor (TFT) structure of the display panel is manufactured first, where the TFT may be a top gate structure, a bottom gate structure, a BCE structure, an ESL structure (an etching stop layer is provided on an active layer), or other types of TFT structures. Manufacturing a first metal layer on a substrate, wherein the first metal layer is generally used as a grid electrode of a TFT; referring to fig. 4 to 9, a first metal layer is formed on the substrate by plating a first metal layer material on the substrate. The first metal layer material can be one or more of aluminum, molybdenum, titanium, nickel, copper, silver, chromium and other metals with good conductivity, and other alloys with similar structures. Then, a photoresist was coated on the first metal layer 3, and then the photoresist was exposed and developed using a halftone mask B having a light-shielding region B3 (light transmittance of 0%), a light-transmitting region B1 (light transmittance of 100%), and a semi-light-transmitting region B2 (light transmittance of 50%). For example, when the positive photoresist is coated, the shading area B3 corresponds to the non-developing area, corresponds to the convex area a2 in the concave-convex structure, the semi-transparent area B2 corresponds to the semi-developing area, corresponds to the concave area a1 in the concave-convex structure, and the transparent area B1 corresponds to the developing area, and corresponds to the portion of the first metal layer to be removed. For example, when the negative photoresist is coated, the shading area B3 corresponds to the non-developing area and the portion of the first metal layer to be removed, the semi-transparent area B2 corresponds to the semi-developing area and the recessed area a1 in the concave-convex structure, and the transparent area B1 corresponds to the developing area and the raised area a2 in the concave-convex structure.

Taking coating of the positive photoresist and using of the halftone mask B as an example, the shading region B3 corresponds to the non-developing region and is aligned with the raised region a2 in the concave-convex structure on the first metal layer 3, the semi-transparent region B2 corresponds to the semi-developing region and is aligned with the recessed region a1 in the concave-convex structure, the transparent region B1 corresponds to the developing region and is aligned with the region to be outside the first gate 31 and the second gate 32, and the structure is as shown in fig. 4. After development, the photoresist thickness on the recessed region (half-developed region) in the recessed and protruding structure is smaller than that on the protruding region (non-developed region), and the photoresist covering the first metal layer to be removed (developed region) is removed by development, as shown in fig. 5. The first metal layer to be removed (the region except for both the first gate and the second gate) without the photoresist cover can then be removed by wet etching, and the structure is shown in fig. 6. Ashing is then used to remove the photoresist in the recessed areas a1 (half developed areas) in the relief structure, as shown in fig. 7. After the ashing process, the photoresist on the raised areas a2 (undeveloped areas) is thinned, but still remains and protects the underlying first metal layer from etching. The first metal layer in the recess region (half-developed region) is etched using the photoresist as a mask, and recess regions with different depths are formed on the first metal layer by controlling the etching time, wherein the depth of the recess regions is shallower than the thickness of the first metal layer, and the structure is shown in fig. 8. Finally, the photoresist on the raised area (area not developed) is removed, and a first metal layer having a concave-convex structure on the upper surface is formed, wherein the first metal layer includes a first gate 31 and a second gate 32, and the structure is as described in fig. 9.

Note that the concave-convex structure of the internal film layer may be fabricated by using the semi-transmissive region, and when the internal film layer may be formed by using a mask plate of the transmissive region or the light-shielding region, a hole may be formed in the internal film layer or an unnecessary internal film layer may be removed. Through the manufacturing process of the concave-convex structure, one or more concave-convex structures can be manufactured on the upper surface of the first metal layer (the first grid and the second grid) or other internal film layers, the cross section of the concave area of the concave-convex structure can be circular, rectangular, rhombic or other shapes, and then the lower surface of the internal film layer covering the concave-convex structure of the first metal layer is also naturally the concave-convex structure.

Although the first metal layer (the first gate and the second gate) may be formed to have an uneven structure on the entire upper surface, the specular reflection light cannot be optimized to be diffuse reflection without being irradiated by ambient light at some areas of the upper surfaces of the first gate and the second gate. Preferably, the concave-convex structure is disposed on a projection area on the first metal layer, and the projection area is an area that can be irradiated by ambient light incident into the display panel, so that the concave-convex structure disposed on the projection area can diffuse the ambient light. Taking two TFTs of the present application as an example, the projection area on the first metal layer is located in a region where the first gate and the second gate can project (the projection is not blocked by the film layer of the second metal layer) onto the cathode in the vertical direction, such as the upper surface of the first gate between the first drain and the second source. The projection region can not be shielded from ambient light by the source/drain and the active layer above, and when the ambient light enters the panel, the upper surface of the first grid between the first drain and the second source can optimize specular reflection into diffuse reflection. For example, a TFT, the projected area on the first metal layer is an area not blocked by the second metal layer and the active layer.

In order to optimize the diffuse reflection of the ambient light incident into the display panel from the substrate direction, the first insulating layer may be formed on the substrate before the first metal layer is formed, and then the concave-convex structure may be formed on the first insulating layer so that the concave-convex structure is formed on the lower surface of the first metal layer, thereby optimizing the diffuse reflection of the ambient light incident into the display panel from the substrate direction. Referring to fig. 1 to 3, in particular, an insulating material, which may be an inorganic oxide or an insulating compound, such as SiOx, SiNx, titanium oxide, aluminum oxide, or the like, is plated on a substrate 1 to form a first insulating layer 2 having an insulating effect on the substrate, as shown in fig. 1.

Then, a concave-convex structure can be formed on the upper surface of the first insulating layer 2, a photoresist is coated on the first insulating layer 2, and the photoresist can be exposed and developed by using a halftone mask having a light-shielding region (light transmittance of 0%), a light-transmitting region (light transmittance of 100%) and a semi-light-transmitting region (light transmittance of 50%). Slightly different, the first insulating layer may generally entirely cover the substrate. Therefore, the concave-convex structure part is directly manufactured, and the half-tone mask can be replaced by the mask C only having the shading area C2 (the light transmittance is 0%) of the mask and the light transmitting area C1 (the light transmittance is 100%) of the mask to expose and develop the light resistance without etching other parts.

Taking coating of a positive photoresist and exposure and development of the photoresist on the first insulating layer using a mask C as an example, the structure is shown in fig. 2. The light shielding region C2 of the mask plate is aligned with the convex region of the concave-convex structure, and the light transmitting region C1 of the mask plate corresponds to the concave region of the concave-convex structure. After development, the photoresist on the recess region a1 in the recess structure a is removed, and the photoresist on the protrusion region a2 remains and protects the underlying first insulating layer 2 from being etched. The first insulating layer 2 of the recess region a1 is etched using the photoresist as a mask, and recess regions a1 having different depths are formed by controlling the etching time. Since the first insulating layer serves as a buffer layer, the lower surface of the first metal layer covering the first insulating layer can be made to have a concave-convex structure, and the depth of the recessed region a1 of the first insulating layer can be equal to the thickness of the first insulating layer 2, or can be shallower than the thickness of the first insulating layer 2. Finally, the photoresist on the raised area a1 is removed to form the first insulating layer 2 with the concave-convex structure a, which is shown in fig. 3.

After the first metal layer is manufactured, a second insulating layer with an insulating function is manufactured on the first metal layer; referring to fig. 10, in particular, the insulating material, which may be an inorganic oxide or a compound with insulating property, such as SiOx, SiNx, titanium oxide, aluminum oxide, etc., is plated on the substrate 1 to form a single-layer plated film or a multi-layer plated film, or other organic insulating material, and the second insulating layer 4 with insulating function is formed on the substrate 1. The second insulating layer covers the first insulating layer 2, the first gate electrode 31, and the second gate electrode 32, and protects the first gate electrode 31 and the second gate electrode 32 from contact with other metals.

In order to connect the two TFTs, a hole communicating with the first gate electrode may be formed in the second insulating layer over the first gate electrode, the hole serving as a connection point of the two TFTs. The hole-making process may be coating photoresist, patterning the photoresist to open the hole-making portion, etching the second insulating layer to the first gate electrode with the photoresist as a mask, and forming a hole in the second insulating layer to communicate with the first gate electrode. And the second source or the second drain of the latter TFT may be connected to the other TFT through a hole in the second insulating layer which communicates with the first gate.

Referring to fig. 10, similarly, an uneven structure may be formed on the upper surface of the second insulating layer, so that the lower surface of the inner film layer covering the uneven structure of the second insulating layer is also an uneven structure. Preferably, the projection area on the second insulating layer is located in a region where the second insulating layer is projected in a vertical direction (the projection is not blocked by the film layer of the first metal layer) onto the substrate and a region where the second insulating layer is projected in a vertical direction (the projection is not blocked by the film layer of the second metal layer) onto the cathode. The projection area on the second insulating layer is an area between the first grid and the second grid, an area on one side of the second grid, which is far away from the anode, and an area between the first drain and the second source.

After the second insulating layer is manufactured, the first active layer 5 and the second active layer 6 are manufactured. Referring to fig. 11, in detail, a photoresist is coated on a substrate, the photoresist is patterned to open the portions where the first active layer and the second active layer are to be formed, and then materials required for the active layers, such as polysilicon, oxide semiconductor, graphene, carbon nanotube, organic semiconductor, and other materials with similar properties, are plated. A first active layer 5 is formed on the second insulating layer 4 above the first gate electrode 31, a second active layer 6 is formed on the second insulating layer 4 above the second gate electrode 32, and the photoresist is removed after the first active layer 5 and the second active layer 6 are manufactured.

After the first active layer 5 and the second active layer 6 are manufactured, manufacturing a second metal layer, wherein the second metal layer is generally sufficient for a source drain electrode of the TFT; referring to fig. 12, in particular, a second metal layer material is plated on the substrate, and a second metal layer 7 is formed on the second insulating layer 4. The second metal layer material can be one or more of aluminum, molybdenum, titanium, nickel, copper, silver, chromium and other materials with good conductivity, and other materials with similar structures. Then, a concave-convex structure is formed on the upper surface of the second metal layer 7, and the manufacturing steps are the same as those for manufacturing the concave-convex structure on the first gate and the second gate, which is not described herein again. Finally, a first source electrode 71 having a concave-convex structure on the upper surface is formed on one side of the first active layer, and a first drain electrode 72 having a concave-convex structure on the upper surface is formed on the other side of the first active layer. A second source electrode 73 having a concave-convex structure on the upper surface is formed on one side of the second active layer, a second drain electrode 74 having a concave-convex structure on the upper surface is formed on the other side of the first active layer, and the second source electrode 73 is connected to the first gate electrode through a hole in the second insulating layer. The first source electrode 71, the first drain electrode 72 and the first gate electrode constitute one TFT, and the second source electrode 73, the second drain electrode 74 and the second gate electrode constitute one TFT.

Preferably, the projection region on the second metal layer (the first source electrode 71, the first drain electrode 72, the second source electrode 73, and the second drain electrode 74) is located in a region where the second metal layer is not blocked in the vertical direction and is projected onto the cathode, and the projection region is located outside a connection portion between the anode and the first source electrode on the first source electrode, on the upper surface of the first drain electrode, on the upper surface of the second source electrode, and on the upper surface of the second drain electrode.

The present application takes a TFT structure as an example, but the TFT structure of the present application may also be a top gate structure or an ESL structure (having an etch stop layer). Of course, the number of TFTs may be one or more. Preferably, when the concave-convex area is disposed in the projection area, such as a TFT, the projection area of the first metal layer is: the lower surface of all the first metal layers, the upper surface of the first metal layer are not shielded by the second metal layer and the active layer, and the projection area of the second metal layer is the area of which the upper surface is not shielded by the anode. In the manufacturing process, the metal wire can be manufactured to be connected with the second drain electrode or other connection points.

Then, a third insulating layer (also called as a passivation layer) is manufactured on the first source electrode, the first drain electrode, the first active layer, the second source electrode, the second drain electrode and the second active layer, and the third insulating layer 8 still plays an insulating role; referring to fig. 13, in particular, the third insulating layer 8 is formed on the substrate 1 by plating an insulating material, such as inorganic oxide or compound with insulating property, such as SiOx, SiNx, titanium oxide, aluminum oxide, or other organic insulating material, on the substrate 1. The third insulating layer 8 covers the first source electrode 71, the first drain electrode 72, the first active layer 5, the second source electrode 73, the second drain electrode 74, and the second active layer 6. Then, a hole communicating with the first source electrode 71 is formed in the third insulating layer 8 above the first source electrode 71, the hole forming process may be coating a photoresist, patterning the photoresist to open the hole, and etching the third insulating layer 8 to the first source electrode 71 using the photoresist as a mask, thereby forming a hole communicating with the first source electrode 71 in the third insulating layer 8. The hole functions to connect the first source electrode and the anode.

In some embodiments, after the third insulating layer is formed, a fourth insulating layer 15 (also referred to as a planarization layer) is formed on the third insulating layer, wherein the fourth insulating layer 15 can smooth out the unevenness of the substrate caused by multiple processes; referring to fig. 14, in particular, the third insulating layer is coated with an insulating material, which may be an inorganic oxide or a compound with insulating properties, such as SiOx, SiNx, titanium oxide, aluminum oxide, or other organic insulating materials, to form a fourth insulating layer 15 on the third insulating layer. Then, a hole communicating with the first source electrode is continuously formed in the fourth insulating layer 15.

In the present embodiment, in order to optimize the manufacturing process, the third insulating layer and the fourth insulating layer may be combined, and the thickness of the third insulating layer may be increased to serve as the fourth insulating layer. Thus, the fourth insulating layer is not required to be manufactured, and a film layer and a photomask can be reduced.

In this embodiment, taking as an example that the thickness of the third insulating layer is increased to serve as the fourth insulating layer, then the transparent anode 9 is fabricated on the third insulating layer, and the anode 9 serves as the anode 9 of the organic light emitting layer; referring to fig. 15, in detail, a photoresist is coated on the substrate, and the photoresist is patterned, i.e., exposed and developed, so that the region where the anode 9 is to be fabricated is opened. Then plating anode material which can be Indium Tin Oxide (ITO) film material and carbon nano tube, etc., forming transparent anode 9 on third insulating layer 8, and finally removing photoresist. The anode 9 is connected to the first source electrode through a hole in the third insulating layer 8 communicating with the first source electrode, so that connection is made between the organic light emitting layer, which then covers the anode, and the TFT.

After the anode 9 is manufactured, a pixel defining layer 10 material is deposited on the anode and the third insulating layer, a pixel defining layer 10 covering the anode and the third insulating layer is formed on the anode and the third insulating layer, and a hole and a concave-convex structure communicated with the anode are manufactured on the pixel defining layer 10 on the anode. Referring to fig. 16, 17 and 18, a layer of photoresist is coated on the pixel defining layer 10, and then the photoresist is exposed and developed by using a halftone mask B having a light-shielding region B3 (light transmittance of 0%), a light-transmitting region B1 (light transmittance of 100%) and a semi-light-transmitting region B2 (light transmittance of 50%). The semi-transparent area is used for forming a concave area of the concave-convex structure, and the shading area or the transparent area is used for forming a hole and a convex area which are communicated with the anode.

Taking coating of the positive photoresist as an example, the shading area corresponds to the non-developing area, corresponds to the raised area in the concave-convex structure on the pixel definition layer material, the semi-transparent area corresponds to the semi-developing area, corresponds to the depressed area in the concave-convex structure, the transparent area corresponds to the developing area, and corresponds to the area of the hole communicated with the anode on the pixel definition layer material. After development, the thickness of the photoresist on the concave area (half developing area) in the concave-convex structure is smaller than that on the convex area (non-developing area), and the photoresist covering the hole which is communicated with the anode on the pixel definition layer material is removed by development. And etching the pixel definition layer on the developing area to the anode by using the photoresist as a mask to form a hole with the bottom of the hole as the anode. Ashing is then used to remove the photoresist over the recessed regions (half-developed regions) in the relief structure. After ashing, the photoresist on the raised areas (undeveloped areas) is thinned, but remains and protects the underlying pixel definition layer material from etching. The pixel definition layer material in the recessed region (half developing region) is etched by using the photoresist as a mask, and the recessed regions with different depths are formed in the pixel definition layer material by controlling the etching time, wherein the depth of the recessed regions is shallower than the thickness of the pixel definition layer material. Finally, the photoresist on the raised area (non-development area) is removed to form a pixel defining layer 10 having an upper surface with a concave-convex structure, and the pixel defining layer 10 further has a hole connected to the anode 9, as shown in fig. 17 and 18.

Then, manufacturing a convex layer 12 on a convex area in the concave-convex structure of the pixel definition layer; referring to fig. 19, 20 and 21, specifically, a photoresist is coated on a substrate, the photoresist is patterned to open the raised region in the pixel definition layer concave-convex structure, then a raised layer material is deposited, the raised layer material may be an inorganic material or an organic material, a raised layer having an arc-shaped surface is formed on the raised region, a micro concave-convex shape is formed on the entire surface of the raised layer, and finally the photoresist is removed.

Then, an organic light-emitting layer 11 is manufactured in a hole communicated with the anode on the pixel defining layer; referring to fig. 22, specifically, a photoresist is coated on a substrate, the photoresist is patterned to open holes on the pixel defining layer 10, which are communicated with the anode, then an organic light emitting layer material is evaporated to form an organic light emitting layer 11 in the holes on the pixel defining layer 10, which are communicated with the anode, and finally the photoresist is removed. The organic light emitting layer 11 includes a hole injection layer HIL, a hole transport layer HTL, an organic light emitting layer EM, an electron transport layer ETL, and an electron injection layer EIL. The organic light emitting layer 11 is connected to the anode through a hole in the pixel defining layer 10 communicating with the anode.

After the organic light emitting layer is manufactured, in order to make the display panel function as a transparent display panel, a transmission window is manufactured outside the TFT and the pixel region (outside between the first gate and the second gate), and the transmission window allows a user to see one surface of the display panel and the other surface of the display panel. The bottom of the transmission window is a first insulating layer, or the bottom of the hole of the transmission window can be other film layers. Referring to fig. 23, a photoresist may be coated on the substrate, patterned, i.e., exposed and developed to open the outer portions of the TFT and the pixel region, and then the pixel defining layer is etched to the first insulating layer using the photoresist as a mask to form a transmission window, and finally the photoresist is removed. The above method for manufacturing the transmission window is one-step forming, but the transmission window may also be manufactured in several times, for example, in the etching process of each process, the transmission window is patterned and then etched to the first insulating layer to form the transmission window.

Then, manufacturing a cathode 13, wherein the cathode 13 is used as a cathode of the organic light-emitting layer; referring to fig. 23, specifically, a cathode material may be plated on the substrate, and the cathode material may be transparent indium gallium zinc oxide, transparent indium gallium zinc titanium oxide, magnesium silver alloy, or other materials with similar characteristics. A cathode 13 covering the pixel defining layer, the bump layer and the organic light emitting layer is formed on the pixel defining layer, the bump layer and the organic light emitting layer.

The concave-convex structure is manufactured on the internal film layer of the display panel, and the concave-convex structure can be manufactured on one film layer or a plurality of film layers of the internal film layers such as the first insulating layer, the first metal layer, the second insulating layer, the second metal layer, the pixel defining layer and the cathode. Alternatively, the concave-convex structure may be formed on the third insulating layer, the anode, the organic light-emitting layer, the convex layer, or the like. Preferably, preparation concave-convex structure on a plurality of inside retes, all be provided with concave-convex structure on a plurality of inside retes and can be better incide ambient light to the specular reflection light optimization that forms in the display panel for display panel still has higher contrast when receiving ambient line interference.

In some embodiments, an encapsulating cover 16 is disposed over the cathode, and when ambient light is incident into the display panel through the encapsulating cover 16, the encapsulating cover 16 also causes specular refraction. An antireflection film 17 may then be provided on one or both sides of the package cover 16. Specifically, an antireflection film may be fabricated on the cathode, and then a package cover plate is covered on the antireflection film; or: covering a packaging cover plate 16 on the cathode, and then manufacturing an antireflection film 17 on the packaging cover plate 16; or: after the antireflection film 17 is manufactured on the cathode, the encapsulation cover plate 16 is covered on the antireflection film 17, and the antireflection film 17 is continuously manufactured on the encapsulation cover plate 16. Fig. 24 shows a structure in which antireflection films 17 are disposed on both sides of the package cover 16.

The antireflection film 17 may be made of MgF2, GaF2, SiO2, Al2O3, Si3N4, ZrO2, TiO2, or the like, and may be formed by single-layer or multilayer composite coating by Chemical Vapor Deposition (CVD) or Physical Vapor Deposition (PVD). The Anti-Reflection Film (Anti-Reflection Film) with a single layer or multiple layers can further reduce the Reflection of light caused by the refraction of ambient light by the glass cover plate. The refractive index of these antireflection films can reduce the refraction of ambient light incident into the display panel, as shown in fig. 25.

Referring to fig. 26, the refractive index is a parameter reflecting the propagation speed of light in different media, the reflection loss can be effectively reduced by changing the phase of the reflected wave, and the reflection reduction effect can be achieved by utilizing the destructive interference of light reflected at each interface. The destructive interference of an ideal single-layer antireflection film must satisfy the following two conditions:

(1)

(2)n_ed＝λ/4

wherein ne, na and ns represent refractive indices of the antireflection film, air and the substrate, respectively, and n_ed is the optical thickness of the antireflection film, and λ is the wavelength of incident light in vacuum, in nm (nanometers).

Referring to fig. 27, a substrate (labeled as GLASS), a typical single-layer antireflection film (labeled as a, 0.25 λ -MgF2, refractive index of 1.38), a reflection spectrum of a double-layer antireflection film [ labeled as b, 0.25 λ -MgF2/(0.25 λ -MgF2, refractive index of 1.69) ] and a reflection spectrum of a three-layer antireflection film [ labeled as c, 0.25 λ -MgF2/0.5 λ -ZrO2 (refractive index of 2.05)/0.25 λ -CeF3 (refractive index of 1.64) ], where the x-axis represents the wavelength of light (wavelength in nm) and the Y-axis represents the reflectance (reflectance).

Referring again to fig. 28, the calculation model for the multilayer film is: r — R01+ R12+ R23+ R34, where R01 denotes a reflection angle of light incident on the first antireflection film, R12 denotes a reflection angle of light incident on the second antireflection film, R23 denotes a reflection angle of light incident on the third antireflection film, R34 denotes a reflection angle of light incident on the substrate, and n1, n2, n3, and n4 denote refractive indices of the first antireflection film, the second antireflection film, the third antireflection film, and the substrate, respectively. It can be seen that the minimum R can be obtained by adjusting the reflectivity and thickness of each layer, and the reflection patterns of typical single-, double-and triple-layer interference-type antireflection films are shown in fig. 28, although the effect of a single-layer dense antireflection film is not ideal, the reflectivity of a double-layer antireflection film at a set wavelength (λ ═ 500nm) is close to zero, but the reflectivity rises sharply in a region deviating from the wavelength even exceeding that of a single-layer antireflection film, and the antireflection film with the optimal design of three layers has wider spectral antireflection characteristics.

The embodiment provides a display panel manufactured by the manufacturing method of the display panel, and the display panel comprises a concave-convex structure, wherein the concave-convex structure is positioned on the surface of an internal film layer, and the concave-convex structure is used for forming diffuse reflection on light rays incident into the display panel.

In this embodiment, the inner film layer includes: a first insulating layer, a first metal layer, a second insulating layer, a second metal layer, a third insulating layer, or a third metal layer. A concave-convex structure is arranged on the surface of the first insulating layer; or: a concave-convex structure is arranged on the surface of the first metal layer; or: a concave-convex structure is arranged on the surface of the second insulating layer; or: a concave-convex structure is arranged on the surface of the second metal layer; or: a concave-convex structure is arranged on the surface of the pixel definition layer; or: and a concave-convex structure is arranged on the surface of the third metal layer.

In this embodiment, the inner film layer further comprises: a third insulating layer, an anode, an organic light-emitting layer, a bump layer, and the like, and these film layers may be provided with a concave-convex structure.

In this embodiment, all upper surfaces of the internal film layers can be provided with the concave-convex structures, but some areas on the internal film layers are not irradiated by ambient light, so that the specular reflection light cannot be optimized to diffuse reflection, and the concave-convex structures are arranged in the projection area on the surface of the internal film layers.

Such as a first metal layer; preferably, the concave-convex structure is arranged on a projection area on the first metal layer, and the projection area is an area which can be irradiated by ambient light, so that the concave-convex structure arranged on the projection area can diffuse the ambient light. The projection area on the first metal layer is located in a region where the first grid electrode and the second grid electrode can project in the vertical direction (the projection is not blocked by a film layer of the second metal layer) to the cathode, such as the upper surface of the first grid electrode between the first drain electrode and the second source electrode. The projection region can not be shielded from ambient light by the source/drain and the active layer above, and when the ambient light enters the panel, the upper surface of the first grid between the first drain and the second source can optimize specular reflection into diffuse reflection.

Such as a second metal layer; preferably, the projection region on the second metal layer (the first source electrode 71, the first drain electrode 72, the second source electrode 73, and the second drain electrode 74) is located in a region where the second metal layer is not blocked in the vertical direction and is projected onto the cathode, and the projection region is located outside a connection portion between the anode and the first source electrode on the first source electrode, on the upper surface of the first drain electrode, on the upper surface of the second source electrode, and on the upper surface of the second drain electrode.

In this embodiment, the display panel is a transparent display panel. A transmission window is provided outside the TFT and the pixel region (outside between the first gate and the second gate), and the transmission window allows a user to see one surface of the display panel and the other surface.

It should be noted that, although the above embodiments have been described herein, the scope of the present invention is not limited thereby. Therefore, based on the innovative concept of the present invention, the changes and modifications of the embodiments described herein, or the equivalent structure or equivalent process changes made by the contents of the specification and the drawings of the present invention, directly or indirectly apply the above technical solutions to other related technical fields, all included in the scope of the present invention.

Claims

1. A display panel, comprising a concave-convex structure, wherein the concave-convex structure is arranged on the surface of an inner film layer, and the concave-convex structure is used for forming diffuse reflection on light rays incident into the display panel.

2. The display panel of claim 1, wherein the inner film layer comprises: a first insulating layer, a first metal layer, a second insulating layer, a second metal layer, a pixel defining layer or a cathode;

3. A display panel as claimed in claim 1 or 2, characterized in that the relief structure is arranged in the projected area of the surface of the inner film layer.

4. A display panel according to claim 1, wherein the display panel is a transparent display panel.