CN211555868U - Single-phase silicon controlled flat bridge - Google Patents
Single-phase silicon controlled flat bridge Download PDFInfo
- Publication number
- CN211555868U CN211555868U CN202020620122.1U CN202020620122U CN211555868U CN 211555868 U CN211555868 U CN 211555868U CN 202020620122 U CN202020620122 U CN 202020620122U CN 211555868 U CN211555868 U CN 211555868U
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- Prior art keywords
- metal sheet
- diode chip
- pole
- chip
- silicon controlled
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- Rectifiers (AREA)
Abstract
The utility model provides a single-phase silicon controlled flat bridge, which aims at the problem that the rectifying flat bridge can only rectify two signals and can not control the alternating current input or the direct current output of the rectifying bridge in the prior art, belongs to the technical field of semiconductor rectification and comprises a first metal sheet, a second metal sheet, a third metal sheet, a fourth metal sheet, a control pin and a negative output pin, the first metal sheet and the second metal sheet are respectively fixedly connected with an input pin, the third metal sheet is fixedly connected with a positive output pin, the first metal sheet and the second metal sheet are both fixedly connected with a first diode chip and a second diode chip, a controllable silicon chip is fixedly connected on the fourth metal sheet, an A pole of the controllable silicon chip is connected with the fourth metal sheet, the K pole of the silicon controlled rectifier chip is connected with the third metal sheet through a third jumper, and the G pole of the silicon controlled rectifier chip is connected with the control pin through a fourth jumper.
Description
Technical Field
The utility model belongs to the technical field of the semiconductor rectification, concretely relates to flat bridge of single-phase silicon controlled rectifier.
Background
The rectifying flat bridge module in the prior art, such as a patent with a patent application number of CN201420091672.3, comprises a metal lead frame, a metal connecting sheet and a one-way conductive chip, wherein the metal lead frame is provided with four lead pins, two lead frames and two bosses, the first lead pin, the second lead pin, the third lead pin and the fourth lead pin are sequentially arranged, the first lead pin and the fourth lead pin are respectively connected with the two lead frames into a whole, and the second lead pin and the third lead pin are respectively connected with the two bosses into a whole; the metal connecting sheets are sheet-shaped, the first end of each connecting sheet is respectively welded with the two lead frames through a one-way conductive chip, and the second end of each connecting sheet is respectively attached to and welded with the two bosses; the lead frame, the boss, the one-way conductive chip and the connecting sheet are packaged in the insulating shell. The function is single, and the rectifier function is only provided, and the rectifier current of the alternating current input end or the direct current output end cannot be controlled. If the rectified output current needs to be controlled, an alternating current type solid-state relay is generally added in front of the rectifier bridge to control the alternating current input of the rectifier bridge, and further control the alternating current output of the rectifier bridge. Adding cost and bulk, while requiring additional wiring.
Disclosure of Invention
The utility model discloses to the problem of the two unable control rectifier bridge's of rectification alternating current input or direct current output of rectification among the prior art flat bridge of rectification, provide a single-phase silicon controlled rectifier flat bridge, this utility model has increased the silicon controlled rectifier chip in the rectifier bridge structure, can control the direct current output of rectifier bridge, improved the degree of integrating of product, practiced thrift material and manufacturing cost.
The invention aims to be realized by the following technical scheme: a single-phase silicon controlled flat bridge comprises a first metal sheet, a second metal sheet, a third metal sheet, a fourth metal sheet, a control pin and a negative output pin, wherein the first metal sheet and the second metal sheet are respectively and fixedly connected with an input pin, the third metal sheet is fixedly connected with a positive output pin, the first metal sheet and the second metal sheet are respectively and fixedly connected with a first diode chip and a second diode chip, the K-pole end surface of the first diode chip on the first metal sheet is connected with the first metal sheet, the A-pole end surface of the second diode chip on the first metal sheet is connected with the first metal sheet, the K-pole end surface of the first diode chip on the second metal sheet is connected with the second metal sheet, the A-pole end surface of the second diode chip on the second metal sheet is connected with the second metal sheet, the A-pole of the first diode chip on the first metal sheet, the B-pole of the second diode chip on the second metal sheet is connected with the second metal sheet, the A-pole end surface of the, The A pole of the first diode chip on the second metal sheet is connected with the negative output pin in series through a first jumper, and the K pole of the second diode chip on the first metal sheet, the K pole of the second diode chip on the second metal sheet and the fourth metal sheet are connected in series through a second jumper; the fourth metal sheet is fixedly connected with a silicon controlled chip, the pole A of the silicon controlled chip is connected with the fourth metal sheet, the pole K of the silicon controlled chip is connected with the third metal sheet through a jumper wire III, and the pole G of the silicon controlled chip is connected with the control pin through a jumper wire IV.
Among the above-mentioned scheme, encapsulate four rectifier diode chips and a silicon controlled rectifier chip in a flat bridge structure, realized using the silicon controlled rectifier chip to replace the relay and play a role, the silicon controlled rectifier switches on and dams in the inside completion of PN junction, there is not movable contact part, electric arc or spark can not appear when consequently switching on or shutting off, it has the not enough of electric arc to have remedied relay work, avoid appearing the spark or puncturing the air and causing the malfunction in high voltage circuit because of the electric current is too big, high reliability, high safety in use, and response speed is very fast, long service life, high work efficiency. The volume and the installation space of the product are greatly reduced, the material cost and the manufacturing cost are saved, and the product integration level is high.
Preferably, the first metal sheet, the second metal sheet, the third metal sheet and the fourth metal sheet have control pins and negative output pins on the same horizontal plane. The height control of the flat bridge structure is ensured to be within the minimum requirement.
Preferably, the first metal sheet, the second metal sheet, the third metal sheet and the fourth metal sheet have a space between the control pin and the negative output pin. Are electrically isolated from each other.
Preferably, the control pin, the negative output pin, the input pin and the positive output pin are arranged in parallel.
Preferably, the first diode chip on the first metal sheet and the first diode chip on the second metal sheet are arranged in a line, and the second diode chip on the first metal sheet and the second diode chip on the second metal sheet are arranged in a line. The jumper connection is convenient.
Preferably, an installation through hole is formed between the first diode chip and the second diode chip on the second metal sheet.
Compared with the prior art, the utility model discloses following beneficial effect has: the silicon controlled rectifier chip is integrated, the direct current output control function of the flat rectifier bridge is added, the reliability is high, the use is safe, the response speed is very high, the service life is long, and the working efficiency is high. The silicon controlled rectifier chip replaces a relay to play a role, so that the volume and the installation space of a product are greatly reduced, the material cost and the manufacturing cost are saved, and the product integration level is high.
Drawings
Fig. 1 is a schematic structural view of the present invention;
FIG. 2 is a block diagram of jumper one;
fig. 3 is a circuit structure diagram of the present invention.
The labels in the figure are: 1. a first metal sheet; 2. a second metal sheet; 3. a third metal sheet; 4. a fourth metal sheet; 5. A control pin; 6. a negative output pin; 7. inputting a pin; 8. a forward output pin; 91. a first diode chip; 92. a second diode chip; 10. a first jumper; 11. a second jumper wire; 12. a silicon controlled chip; 13. a jumper wire III; 14. a jumper wire is IV; 15. mounting a through hole; 16. and (4) a boss.
Detailed Description
The invention will be further described with reference to the embodiments shown in the drawings to which:
example 1
As shown in fig. 1, 2 and 3, a single-phase silicon controlled flat bridge comprises a first metal sheet 1, a second metal sheet 2, a third metal sheet 3, a fourth metal sheet 4, a control pin 5 and a negative output pin 6 on the same horizontal plane. The first metal sheet 1, the second metal sheet 2, the third metal sheet 3 and the fourth metal sheet 4 are made of copper, the control pin 5 and the negative output pin 6 are made of copper, and the first metal sheet 1, the second metal sheet 2, the third metal sheet 3 and the fourth metal sheet 4 are spaced from each other by the control pin 5 and the negative output pin 6. The first metal sheet 1 and the second metal sheet 2 are respectively fixedly connected with a copper input pin 7, the third metal sheet 3 is fixedly connected with a copper positive output pin 8, the first metal sheet 1 and the second metal sheet 2 are both welded and connected with a first diode chip 91 and a second diode chip 92, the K-pole end face of the first diode chip 91 on the first metal sheet 1 is connected with the first metal sheet 1, the A-pole end face of the second diode chip 92 on the first metal sheet 1 is connected with the first metal sheet 1, the K-pole end face of the first diode chip 91 on the second metal sheet 2 is connected with the second metal sheet 2, the A-pole end face of the second diode chip 92 on the second metal sheet 2 is connected with the second metal sheet 2, the A-pole of the first diode chip 91 on the first metal sheet 1, the A-pole of the first diode chip 91 on the second metal sheet 2 and the negative output pin 6 are connected through a jumper wire 10 are connected in series, the first diode chip 91 on the first metal sheet 1 and the first diode chip 91 on the second metal sheet 2 are aligned. The K pole of the second diode chip 92 on the first metal sheet 1, the K pole of the second diode chip 92 on the second metal sheet 2 and the fourth metal sheet 4 are connected in series through a jumper wire two 11, and the second diode chip 92 on the first metal sheet 1 and the second diode chip 92 on the second metal sheet 2 are arranged in a row. The fourth metal sheet 4 is fixedly connected with a controllable silicon chip 12, the pole A of the controllable silicon chip 12 is connected with the fourth metal sheet 4, the pole K of the controllable silicon chip 12 is connected with the third metal sheet 3 through a jumper wire III 13, and the pole G of the controllable silicon chip 12 is connected with the control pin 5 through a jumper wire IV 14 in a welding mode. The contact surface of the welding connection of the fourth jumper wire 14, the third jumper wire 13 and the silicon controlled chip 12 is provided with a boss 16 facing the direction of the silicon controlled chip 12, the contact surface of the welding connection of the first jumper wire 10 and the first diode chip 91 is provided with a boss 16 facing the direction of the first diode chip 91, and the contact surface of the welding connection of the second jumper wire 11 and the second diode chip 92 is provided with a boss 16 facing the direction of the second diode chip 92, so that the generation of welding stress is reduced.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications, additions and substitutions for the specific embodiments described herein may be made by those skilled in the art without departing from the spirit of the invention or exceeding the scope of the invention as defined in the accompanying claims.
Claims (6)
1. A single-phase silicon controlled flat bridge is characterized by comprising a first metal sheet (1), a second metal sheet (2), a third metal sheet (3), a fourth metal sheet (4), a control pin (5) and a negative output pin (6), wherein the first metal sheet (1) and the second metal sheet (2) are respectively and fixedly connected with an input pin (7), the third metal sheet (3) is fixedly connected with a positive output pin (8), the first metal sheet (1) and the second metal sheet (2) are respectively and fixedly connected with a first diode chip (91) and a second diode chip (92), the K-pole end face of the first diode chip (91) on the first metal sheet (1) is connected with the first metal sheet (1), the A-pole end face of the second diode chip (92) on the first metal sheet (1) is connected with the first metal sheet (1), the K pole end face of a first diode chip (91) on the second metal sheet (2) is connected with the second metal sheet (2), the A pole end face of a second diode chip (92) on the second metal sheet (2) is connected with the second metal sheet (2), the A pole of the first diode chip (91) on the first metal sheet (1), the A pole of the first diode chip (91) on the second metal sheet (2) and the negative output pin (6) are connected in series through a first jumper (10), and the K pole of the second diode chip (92) on the first metal sheet (1), the K pole of the second diode chip (92) on the second metal sheet (2) and the fourth metal sheet (4) are connected in series through a second jumper (11); the silicon controlled rectifier is characterized in that a controllable silicon chip (12) is fixedly connected onto the fourth metal sheet (4), the pole A of the controllable silicon chip (12) is connected with the fourth metal sheet (4), the pole K of the controllable silicon chip (12) is connected with the third metal sheet (3) through a jumper wire III (13), and the pole G of the controllable silicon chip (12) is connected with the control pin (5) through a jumper wire IV (14).
2. The single-phase silicon controlled flat bridge according to claim 1, wherein the first metal sheet (1), the second metal sheet (2), the third metal sheet (3), the fourth metal sheet (4), the control pin (5) and the negative output pin (6) are on the same horizontal plane.
3. The single-phase silicon controlled flat bridge according to claim 1, characterized in that the first metal sheet (1), the second metal sheet (2), the third metal sheet (3), the fourth metal sheet (4), the control pin (5) and the negative output pin (6) are spaced from each other.
4. The single-phase silicon controlled flat bridge according to claim 1, characterized in that the control pin (5), the negative output pin (6), the input pin (7) and the positive output pin (8) are arranged in parallel.
5. The single-phase silicon controlled flat bridge as claimed in claim 1, characterized in that the first diode chip (91) on the first metal plate (1) and the first diode chip (91) on the second metal plate (2) are aligned, and the second diode chip (92) on the first metal plate (1) and the second diode chip (92) on the second metal plate (2) are aligned.
6. The single-phase silicon controlled flat bridge as claimed in claim 1, characterized in that a mounting through hole (15) is provided between the first diode chip (91) and the second diode chip (92) on the second metal sheet (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020620122.1U CN211555868U (en) | 2020-04-22 | 2020-04-22 | Single-phase silicon controlled flat bridge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020620122.1U CN211555868U (en) | 2020-04-22 | 2020-04-22 | Single-phase silicon controlled flat bridge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211555868U true CN211555868U (en) | 2020-09-22 |
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ID=72496640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020620122.1U Active CN211555868U (en) | 2020-04-22 | 2020-04-22 | Single-phase silicon controlled flat bridge |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211555868U (en) |
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2020
- 2020-04-22 CN CN202020620122.1U patent/CN211555868U/en active Active
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