CN211546718U - 一种区熔炉热量反射装置 - Google Patents
一种区熔炉热量反射装置 Download PDFInfo
- Publication number
- CN211546718U CN211546718U CN201921625433.0U CN201921625433U CN211546718U CN 211546718 U CN211546718 U CN 211546718U CN 201921625433 U CN201921625433 U CN 201921625433U CN 211546718 U CN211546718 U CN 211546718U
- Authority
- CN
- China
- Prior art keywords
- chassis
- monocrystalline silicon
- upright post
- reflector
- furnace heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004857 zone melting Methods 0.000 title claims abstract description 20
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 47
- 239000000376 reactant Substances 0.000 claims description 2
- 208000037656 Respiratory Sounds Diseases 0.000 abstract description 3
- 238000001816 cooling Methods 0.000 abstract description 3
- 238000003723 Smelting Methods 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Landscapes
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201921625433.0U CN211546718U (zh) | 2019-09-26 | 2019-09-26 | 一种区熔炉热量反射装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201921625433.0U CN211546718U (zh) | 2019-09-26 | 2019-09-26 | 一种区熔炉热量反射装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN211546718U true CN211546718U (zh) | 2020-09-22 |
Family
ID=72497858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201921625433.0U Active CN211546718U (zh) | 2019-09-26 | 2019-09-26 | 一种区熔炉热量反射装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN211546718U (zh) |
-
2019
- 2019-09-26 CN CN201921625433.0U patent/CN211546718U/zh active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN211546718U (zh) | 一种区熔炉热量反射装置 | |
CN109297009B (zh) | 一种蒸汽发生器及其传热管支撑装置和传热管安装方法 | |
JP2024533738A (ja) | ヒータアセンブリ及び単結晶炉 | |
CN112501526B (zh) | 一种钛合金表面强度改善用回火装置 | |
JP2007184383A (ja) | 磁場形成装置 | |
CN101930891B (zh) | 反应腔室和内衬装置 | |
CN101597134B (zh) | 玻璃精密退火装置及其退火工艺 | |
CN203546114U (zh) | 一种用于辊底式连续退火炉的料架 | |
CN112161599A (zh) | 用于单晶叶片垂直度定位的校正仪 | |
CN211871801U (zh) | 钢化玻璃成型模具 | |
CN1555089A (zh) | 半导体圆片快速热处理装置及使用方法 | |
JP2003012394A (ja) | シリコンインゴット成長装置 | |
CN113758789A (zh) | 支撑加热金属样品的装置及系统 | |
CN216585097U (zh) | 一种大型转子热处理用支架 | |
CN217764471U (zh) | 线圈稳定装置及感应炉 | |
CN215494314U (zh) | 一种空间大口径反射镜离散式支撑结构的柔性减振底座 | |
CN216954026U (zh) | 坩埚支撑结构 | |
CN209144197U (zh) | 一种环形工件热处理出炉后摆放冷却装置 | |
CN218453212U (zh) | 胶膜回火装置 | |
CN213147786U (zh) | 用于单晶叶片垂直度定位的校正仪 | |
KR101537215B1 (ko) | 기판처리장치 | |
CN218513181U (zh) | 偏滤器及聚变装置 | |
CN219696017U (zh) | 一种快装式lcd导乘屏结构 | |
CN220791389U (zh) | 一种高压脉冲油箱 | |
CN115029770B (zh) | 一种坩埚大气下降炉装置及方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220429 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 inside. Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region before: China Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. |