CN211545965U - Silicon carbide production equipment - Google Patents
Silicon carbide production equipment Download PDFInfo
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- CN211545965U CN211545965U CN201921791855.5U CN201921791855U CN211545965U CN 211545965 U CN211545965 U CN 211545965U CN 201921791855 U CN201921791855 U CN 201921791855U CN 211545965 U CN211545965 U CN 211545965U
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Abstract
The utility model relates to a semiconductor material SiC's production facility technical field discloses a carborundum production facility, include: the crucible furnace comprises a furnace body, wherein an accommodating space for placing a crucible is arranged in the furnace body; a heating coil sleeved on the outer periphery of the furnace body; and a driving device connected to the heating coil and driving the heating coil to move in the extending direction of the central axis thereof. In the silicon carbide production equipment, the heating coil can move up and down on the outer periphery of the furnace body under the drive of the drive device and heat the furnace body, so that the silicon carbide in the furnace body forms better temperature gradient in the vertical direction in the crystal growth process, the improvement of the crystallization rate is facilitated, and the crystal quality is improved.
Description
Technical Field
The utility model relates to a semiconductor material SiC's production facility technical field, in particular to carborundum production facility.
Background
The silicon carbide furnace is production equipment for producing semiconductor material SiC, and has excellent application value in the aerospace and military fields due to the characteristics of wide band gap, high critical breakdown electric field, high thermal conductivity and the like. The current mainstream method for the SiC crystal growth method is as follows: seeded sublimation, i.e. PVT. When the SiC source is heated to above 2000 ℃ in a closed reaction chamber, the SiC source is decomposed into gas molecules containing Si and C, and the gas molecules are condensed to the surface of a relatively cold seed crystal through the temperature gradient between the source and the seed crystal to grow the SiC single crystal.
In the process of crystal growth, the unbalance of the temperature in the furnace body can cause the disorder of the crystal phase of the crystal, and the quality of the grown crystal is not high. In the prior art, a heating coil for heating a furnace body and a crystal prevented from moving in the furnace body cannot move, and a temperature gradient beneficial to crystal growth is difficult to form by controlling power, so that the low crystallization rate is always a technical problem in the industry. Therefore, how to control the temperature in the furnace body in a balanced manner to facilitate the temperature gradient of crystal growth so as to improve the crystallization rate is a problem which needs to be solved at present.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a carborundum production facility, in this carborundum production facility, heating coil can reciprocate at furnace body periphery side under drive arrangement's drive to heat the furnace body, make the carborundum in the furnace body form better temperature gradient at vertical orientation at long brilliant in-process, be favorable to improving the crystallization rate, improve the crystal quality.
In order to achieve the above purpose, the utility model provides the following technical scheme:
a silicon carbide production apparatus comprising:
the crucible furnace comprises a furnace body, wherein an accommodating space for placing a crucible is arranged in the furnace body;
a heating coil sleeved on the outer periphery of the furnace body;
and a driving device connected to the heating coil and driving the heating coil to move in an extending direction of a central axis of the heating coil.
In the above silicon carbide production equipment, for convenience of explanation, according to the working positions of the furnace body and the heating coil, the extending direction of the central axis of the heating coil is the vertical direction, wherein the heating coil is arranged on the peripheral side of the furnace body, the heating coil can move up and down on the peripheral side of the furnace body under the driving of the driving device and heats the furnace body, so that the silicon carbide in the furnace body forms a better temperature gradient in the vertical direction in the crystal growth process, which is beneficial to improving the crystallization rate and improving the crystal quality.
Optionally, the silicon carbide production apparatus further comprises:
the bracket is arranged on the outer side of the furnace body;
a guide member mounted to the bracket;
and the sliding block is in sliding fit with the guide piece and is fixedly connected with the heating coil.
Optionally, the guide is a guide rail, and the sliding block is slidably connected with the guide rail; alternatively, the first and second electrodes may be,
the guide piece is a guide rod, and the sliding block is connected with the guide rod in a sliding mode.
Optionally, the drive device comprises:
the screw transmission mechanism is arranged on the outer side of the furnace body, a screw of the screw transmission mechanism is arranged in parallel with the central axis of the heating coil, and a transmission nut of the screw transmission mechanism is fixedly connected with the sliding block;
and the power device is in transmission connection with the lead screw so as to drive the lead screw to rotate.
Optionally, the power means comprises a servo motor.
Optionally, the drive device comprises:
the rack is arranged on the outer side of the heating coil and fixedly connected with the sliding block, and the length extension direction of the rack is parallel to the central axis of the heating coil;
a gear engaged with the rack;
and the second power device is in transmission connection with the gear and is used for driving the gear to rotate.
Optionally, the second power means comprises a servo motor.
Optionally, the drive device comprises:
the chain transmission mechanism is arranged on the outer side of the heating coil and comprises a transmission chain and two transmission wheels which are matched and connected with the transmission chain and arranged in parallel, the arrangement direction of the two transmission wheels is parallel to the central axis of the heating coil, and one node of the transmission chain is fixedly connected with the sliding block;
and the third power device is in transmission connection with one of the two transmission wheels.
Optionally, the third power means comprises a servo motor.
Drawings
FIG. 1 is a schematic structural diagram of a silicon carbide production apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a silicon carbide production apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a silicon carbide production apparatus according to an embodiment of the present invention;
icon: 1-furnace body; 2-a heating coil; 3-a drive device; 4-a scaffold; 5-a guide; 6-a slide block; 7-a connecting frame; 31-a lead screw; 32-a drive nut; 33-a power plant; 34-a rack; 35-a gear; 36-a drive chain; 37-a transmission wheel; 71-a support arm; 72-connecting rod.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to 1, the embodiment of the utility model provides a carborundum production facility, include: the crucible furnace comprises a furnace body 1, wherein an accommodating space for placing a crucible is arranged in the furnace body 1; a heating coil 2 sleeved on the outer periphery of the furnace body 1; and a driving device 3 connected to the heating coil 2 and driving the heating coil 2 to move in the extending direction of the center axis thereof.
In the above silicon carbide production apparatus, for convenience of description, according to the working positions of the furnace body 1 and the heating coil 2, the extending direction of the central axis of the heating coil 2 is the vertical direction, wherein the heating coil 2 is arranged on the peripheral side of the furnace body 1, the heating coil 2 can move up and down on the peripheral side of the furnace body 1 under the driving of the driving device 3, and heats the furnace body 1, so that the silicon carbide in the furnace body 1 forms a better temperature gradient in the vertical direction in the crystal growth process, which is beneficial to improving the crystallization rate and improving the crystal quality.
Specifically, the above silicon carbide production apparatus further includes: a bracket 4 arranged outside the furnace body 1; a guide 5 mounted to the bracket 4; with guide 5 sliding fit's slider 6, slider 6 and heating coil 2 fixed connection, wherein, heating coil 2 can be through link 7 and slider 6 fixed connection, and link 7 includes support arm 71, the one end fixedly connected with connecting rod 72 that support arm 71 is connected with slider 6 deviates from slider 6, connecting rod 72 and heating coil 2 fixed connection. The slider 6 is in sliding fit with the guide 5, the sliding direction of the slider 6 is parallel to the central axis of the heating coil 2, namely the slider 6 moves in the vertical direction along the guide 5, the heating coil 2 is fixed with the slider 6 and can move up and down in the vertical direction along with the slider 6, the moving direction of the heating coil 2 is guided by the cooperation of the guide 5 and the slider 6, and the heating coil 2 can move stably in the vertical direction.
In the silicon carbide production equipment, the guide piece 5 can be a guide rail, and the slide block 6 is in sliding connection with the guide rail; alternatively, the guide 5 is provided as a guide rod, and the slider 6 is slidably connected to the guide rod.
Specifically, the driving device may be arranged in various ways, such as:
the first method is as follows:
as shown in fig. 1, the driving device 3 includes: the screw 31 transmission mechanism is arranged outside the furnace body 1, wherein the screw 31 of the screw 31 transmission mechanism is arranged in parallel with the central axis of the heating coil 2, and the transmission nut 32 of the screw 31 transmission mechanism is fixedly connected with the slide block 6; and the power device 33 is in transmission connection with the lead screw 31 to drive the lead screw 31 to rotate. The transmission nut 32 in the transmission mechanism of the screw rod 31 can stably move along the extension direction of the screw rod 31 under the rotation of the screw rod 31, and then the transmission mechanism of the screw rod 31 drives the heating coil 2 to move in the vertical direction, so that the heating coil 2 can move stably, the moving speed of the heating coil 2 is convenient to control, and the temperature in the furnace can be controlled more favorably.
Specifically, the power device in the first embodiment may be a servo motor, and it should be noted that the power device may also be another power device capable of driving the lead screw 31 to rotate, and the embodiment is not limited.
The second method comprises the following steps:
as shown in fig. 2, the driving device includes: the rack 34 is arranged on the outer side of the heating coil 2 and fixedly connected with the slide block 6, and the length extension direction of the rack 34 is parallel to the central axis of the heating coil 2; a gear 35 engaged with the rack 34; and the second power device is in transmission connection with the gear 35 and is used for driving the gear 35 to rotate. The gear 35 and the rack 34 have good meshing structure stability, the heating coil 2 is driven to move in the vertical direction through the meshing structure of the gear 35 and the rack 34, the stability is good, and the moving stability of the heating coil 2 can be ensured.
The second power device in the second embodiment may be a servo motor, and it should be noted that the second power device may also be another power device capable of driving the gear to rotate, which is not limited in this embodiment.
The third method comprises the following steps:
as shown in fig. 3, the driving device includes: the chain transmission mechanism is arranged on the outer side of the heating coil 2 and comprises a transmission chain 36 and two transmission wheels 37 which are in transmission fit connection with the transmission chain 36 and are arranged in parallel, the arrangement direction of the two transmission wheels 37 is parallel to the central axis of the heating coil 2, and one node of the transmission chain 36 is fixedly connected with the sliding block 6; and a third power device in transmission connection with one 37 of the two transmission wheels 37. The two driving wheels 37 are arranged in the vertical direction, the driving chain 36 is sleeved on the two driving wheels 37, the third driving device drives one of the driving wheels 37 to rotate, namely the driving wheel, so that the driving chain 36 can drive along with the rotation of the driving wheels 37, a connecting block is arranged at a chain link of the driving chain 36 and fixedly connected with the sliding block 6, the chain link can reciprocate up and down in the vertical direction, the heating coil 2 is driven to move in the vertical direction, and the temperature in the furnace is convenient to control.
In the third mode, the third power device may be a servo motor. It should be noted that the second power device may also be another power device capable of driving the transmission wheel to rotate, and this embodiment is not limited.
It will be apparent to those skilled in the art that various changes and modifications may be made to the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (8)
1. A silicon carbide production apparatus, comprising:
the crucible furnace comprises a furnace body, wherein an accommodating space for placing a crucible is arranged in the furnace body;
a heating coil sleeved on the outer periphery of the furnace body;
a driving device connected to the heating coil and configured to drive the heating coil to move in an extending direction of a central axis thereof;
the bracket is arranged on the outer side of the furnace body;
a guide member mounted to the bracket;
and the sliding block is in sliding fit with the guide piece and is fixedly connected with the heating coil.
2. The silicon carbide production apparatus of claim 1, wherein the guide is a guide rail, and the slide block is slidably coupled to the guide rail; alternatively, the first and second electrodes may be,
the guide piece is a guide rod, and the sliding block is connected with the guide rod in a sliding mode.
3. The silicon carbide production apparatus according to claim 1, wherein the driving means includes:
the screw transmission mechanism is arranged on the outer side of the furnace body, a screw of the screw transmission mechanism is arranged in parallel with the central axis of the heating coil, and a transmission nut of the screw transmission mechanism is fixedly connected with the sliding block;
and the power device is in transmission connection with the lead screw so as to drive the lead screw to rotate.
4. The silicon carbide production apparatus of claim 3, wherein the power device comprises a servo motor.
5. The silicon carbide production apparatus according to claim 1, wherein the driving means includes:
the rack is arranged on the outer side of the heating coil and fixedly connected with the sliding block, and the length extension direction of the rack is parallel to the central axis of the heating coil;
a gear engaged with the rack;
and the second power device is in transmission connection with the gear and is used for driving the gear to rotate.
6. The silicon carbide production apparatus of claim 5, wherein the second power means comprises a servo motor.
7. The silicon carbide production apparatus according to claim 1, wherein the driving means includes:
the chain transmission mechanism is arranged on the outer side of the heating coil and comprises a transmission chain and two transmission wheels which are matched and connected with the transmission chain and arranged in parallel, the arrangement direction of the two transmission wheels is parallel to the central axis of the heating coil, and one node of the transmission chain is fixedly connected with the sliding block;
and the third power device is in transmission connection with one of the two transmission wheels.
8. The silicon carbide production apparatus of claim 7, wherein the third power means comprises a servo motor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921791855.5U CN211545965U (en) | 2019-10-23 | 2019-10-23 | Silicon carbide production equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921791855.5U CN211545965U (en) | 2019-10-23 | 2019-10-23 | Silicon carbide production equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211545965U true CN211545965U (en) | 2020-09-22 |
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ID=72498476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921791855.5U Active CN211545965U (en) | 2019-10-23 | 2019-10-23 | Silicon carbide production equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211545965U (en) |
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2019
- 2019-10-23 CN CN201921791855.5U patent/CN211545965U/en active Active
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