CN211510564U - Ultrasonic atomization piece working circuit and ultrasonic electronic cigarette - Google Patents

Ultrasonic atomization piece working circuit and ultrasonic electronic cigarette Download PDF

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Publication number
CN211510564U
CN211510564U CN201922033458.8U CN201922033458U CN211510564U CN 211510564 U CN211510564 U CN 211510564U CN 201922033458 U CN201922033458 U CN 201922033458U CN 211510564 U CN211510564 U CN 211510564U
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circuit
electrically connected
resistor
square wave
mos
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刘建福
钟科军
郭小义
尹新强
易建华
李胜博
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China Tobacco Hunan Industrial Co Ltd
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China Tobacco Hunan Industrial Co Ltd
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Abstract

The utility model discloses an ultrasonic atomization piece working circuit and an ultrasonic electronic cigarette, wherein the ultrasonic atomization piece working circuit comprises a power module, a microprocessor, a high-frequency square wave generating circuit and a resonance circuit, the output end of the power module is electrically connected with the resonance circuit, and the output end of the microprocessor is electrically connected with the resonance circuit through the high-frequency square wave generating circuit; the ultrasonic atomization piece is connected in series in the resonant circuit; the high-frequency square wave generating circuit comprises an MOS (metal oxide semiconductor) tube, and the drain electrode of the MOS tube is electrically connected with the resonant circuit; the peak absorption circuit is connected between the grid of the MOS tube and the ground. The utility model discloses increase a peak absorption circuit on MOS pipe grid for absorb the high-pressure peak that flows over above the MOS pipe grid, thereby the front end driver chip that the protection links to each other with MOS pipe grid improves product reliability and yield.

Description

Ultrasonic atomization piece working circuit and ultrasonic electronic cigarette
Technical Field
The utility model particularly relates to an ultrasonic atomization piece working circuit, ultrasonic wave electron cigarette.
Background
The existing working circuit of the ultrasonic atomization sheet comprises a power supply module, a microprocessor, a high-frequency square wave generating circuit and a resonant circuit, wherein the output end of the power supply module is electrically connected with the resonant circuit, the output end of the microprocessor is electrically connected with the resonant circuit through the high-frequency square wave generating circuit, and the ultrasonic atomization sheet is connected in series in the resonant circuit. When the smoke generating device works, the microprocessor outputs PWM waves to the high-frequency square wave generating circuit, and the PWM waves control the MOS tube in the high-frequency square wave generating circuit to be continuously switched on and off, so that the inductor in the resonant circuit is continuously charged and discharged, and the ultrasonic atomizing sheet in the resonant circuit is oscillated to generate smoke.
The existing ultrasonic atomization sheet working circuit utilizes the fact that when an MOS tube is closed, induction electromotive force generated by an inductor in a resonant circuit connected with the MOS tube in series and the voltage of a power supply module are superposed to form high voltage to drive the ultrasonic atomization sheet to oscillate, the high voltage can flow back a peak to the grid electrode of the MOS tube through a junction capacitor in the MOS tube, and therefore a front end driving chip connected with the grid electrode of the MOS tube is burnt out, high product reject ratio is caused, and the working reliability of products is low.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to the front end driver chip who links to each other with the MOS pipe grid is burnt out easily to the high-pressure peak on the MOS pipe grid among the above-mentioned prior art, cause the problem that the product defective rate is high and the reliability is low, provide an ultrasonic atomization piece working circuit, ultrasonic wave electron cigarette, increase a peak absorption circuit on the MOS pipe grid, be used for absorbing the high-pressure peak that flows backward above the MOS pipe grid, thereby the front end driver chip who links to each other with the MOS pipe grid is protected, improve product reliability and yield.
In order to solve the technical problem, the utility model discloses the technical scheme who adopts is:
an ultrasonic atomization sheet working circuit comprises a power supply module, a microprocessor, a high-frequency square wave generating circuit and a resonant circuit, wherein the output end of the power supply module is electrically connected with the resonant circuit, and the output end of the microprocessor is electrically connected with the resonant circuit through the high-frequency square wave generating circuit; the ultrasonic atomization piece is connected in series in the resonant circuit; the high-frequency square wave generating circuit comprises an MOS (metal oxide semiconductor) tube, and the drain electrode of the MOS tube is electrically connected with the resonant circuit; the structure is characterized by also comprising a peak absorption circuit which is connected between the grid of the MOS tube and the ground.
By means of the structure, when the smoke generating device works, the microprocessor outputs PWM waves to the high-frequency square wave generating circuit, the PWM waves control the MOS tube in the high-frequency square wave generating circuit to be continuously switched on and off, and therefore the inductor in the resonant circuit is continuously charged and discharged, and the ultrasonic atomization piece in the resonant circuit is vibrated to generate smoke. The utility model discloses in, even have peak absorption circuit owing to on MOS pipe grid, be used for absorbing the high-pressure peak that flows over above the MOS pipe grid to the front end driver chip that the protection links to each other with MOS pipe grid improves product reliability and yield.
As a preferred mode, the high-frequency square wave generating circuit comprises a PWM amplifying circuit and a MOS transistor switching circuit; the MOS tube switching circuit comprises the MOS tube; the output end of the microprocessor is electrically connected with the grid electrode of the MOS tube through the PWM amplifying circuit, and the source electrode of the MOS tube is grounded.
The PWM wave output by the microprocessor is amplified by the PWM amplifying circuit and then is output to the MOS tube switching circuit and used for controlling the uninterrupted switching of the MOS tube in the MOS tube switching circuit, so that the continuous charging and discharging of the inductor in the resonance circuit are realized, and a high-voltage high-frequency semi-sinusoidal oscillation signal is generated on the inductor to drive the ultrasonic atomization sheet to work.
Furthermore, the resonant circuit also comprises a first capacitor connected in series with the ultrasonic atomization sheet.
The capacitance value of the first capacitor is small, and the first capacitor is mainly used for reducing or eliminating the interference effect of parasitic capacitors in the ultrasonic atomization sheet, so that the resonance effect is better.
As a preferred mode, the PWM amplifying circuit includes a first resistor, a square wave amplifier, a second capacitor, and the MOS transistor switching circuit further includes a second resistor and a third resistor; the output end of the microprocessor is electrically connected with the input end of the square wave amplifier, the first resistor is connected between the output end of the microprocessor and the ground, the power supply end of the square wave amplifier is grounded through the second capacitor, the output end of the square wave amplifier is electrically connected with the grid electrode of the MOS tube through the second resistor, and the third resistor is connected between the grid electrode of the MOS tube and the ground.
Preferably, the peak absorption circuit comprises a PNP type triode, an emitter of the PNP type triode is electrically connected to a gate of the MOS transistor, a collector of the PNP type triode is grounded, and a base of the PNP type triode is electrically connected to an output terminal of the square wave amplifier.
As a preferable mode, the resonant circuit further includes an inductor, the output end of the power supply module is electrically connected to the drain of the MOS transistor through the inductor, one electrode layer of the ultrasonic atomization sheet is electrically connected to the drain of the MOS transistor, and the other electrode layer of the ultrasonic atomization sheet is grounded.
During operation, the microprocessor outputs PWM waves to the high-frequency square wave generating circuit, the PWM waves control the MOS tube in the high-frequency square wave generating circuit to be continuously switched on and off, and continuous charging and discharging of the inductor are achieved, so that a high-voltage high-frequency semi-sinusoidal oscillation signal is generated on the inductor to drive the ultrasonic atomization sheet to work. Specifically, for a single PWM oscillation period, when the second resistor passes through a high level, the MOS transistor is turned on, the inductor is grounded and starts to store energy, and at this time, the emitter and base voltages of the PNP triode are the same, and the PNP triode is not turned on; when the second resistor passes through the low level, the MOS tube is turned off, and after the self-induced electromotive force of the inductor and the voltage VCC provided by the power module are superposed, a high-voltage half sine wave is formed at one end of the ultrasonic atomization sheet to drive the ultrasonic atomization sheet to work. The high voltage can flow back to the second resistor through a junction capacitor between the grid and the drain of the MOS tube, and the output end of the square wave amplifier is internally pulled to GND ground at the moment, so that the emitting electrode of the PNP type triode is connected with a high voltage peak, the base electrode of the PNP type triode is grounded, and the PNP type triode is conducted. Because the triode has higher switching rate, the high-voltage peak on the second resistor can be quickly released through the CE electrode (collector electrode-emitter electrode) of the PNP triode, thereby protecting the output end of the square wave amplifier and preventing the square wave amplifier from being burnt out.
Furthermore, the device also comprises a current acquisition circuit for acquiring the working current between the source electrode of the MOS tube and the ground, and the output end of the current acquisition circuit is electrically connected with the input end of the microprocessor.
The current acquisition circuit is used for acquiring working current and sending the working current to the microprocessor so that the microprocessor adjusts the frequency of the output PWM (pulse-width modulation) wave according to the working current and finally realizes the power adjustment of the ultrasonic atomization piece.
As a preferable mode, the current collection circuit includes a fourth resistor, a fifth resistor, and a third capacitor, the fifth resistor is connected between the source of the MOS transistor and the ground, the source of the MOS transistor is grounded sequentially through the fourth resistor and the third capacitor, and the input terminal of the microprocessor is connected between the fourth resistor and the third capacitor.
Preferably, the power module includes a battery and a boost module, and the battery is electrically connected to the resonant circuit through the boost module.
The battery is used for supplying power, the voltage of the battery is boosted to the voltage required by the oscillation of the resonant circuit by the boosting chip in the boosting module, and the power module is good in universality.
Based on the same inventive concept, the utility model also provides an ultrasonic wave electron cigarette, its structural feature includes ultrasonic atomization piece working circuit.
Compared with the prior art, the utility model discloses increase a peak absorption circuit on MOS pipe grid for absorb the high-pressure peak that flows over above the MOS pipe grid, thereby the front end driver chip that the protection links to each other with MOS pipe grid improves product reliability and yield.
Drawings
Fig. 1 is a circuit block diagram according to an embodiment of the present invention.
Fig. 2 is a schematic circuit diagram of the present invention.
The ultrasonic atomization device comprises a power module 1, a battery 101, a boosting module 102, a microprocessor 2, a high-frequency square wave generating circuit 3, a PWM amplifying circuit 301, a MOS transistor switching circuit 302, a resonant circuit 4, a current collecting circuit 5, a spike absorbing circuit 6, a square wave amplifier U1, an inductor L1, a first capacitor C1, a second capacitor C2, a third capacitor C3, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a MOS transistor Q1, a PNP triode Q2 and an ultrasonic atomization sheet W.
Detailed Description
As shown in fig. 1 and 2, an ultrasonic atomization sheet working circuit in an ultrasonic electronic cigarette includes a power module 1, a microprocessor 2, a high-frequency square wave generating circuit 3 and a resonant circuit 4, wherein an output end of the power module 1 is electrically connected with the resonant circuit 4, and an output end of the microprocessor 2 is electrically connected with the resonant circuit 4 through the high-frequency square wave generating circuit 3; the ultrasonic atomization sheet W is connected in series in the resonance circuit 4; the high-frequency square wave generating circuit 3 comprises an MOS tube Q1, and the drain electrode of the MOS tube Q1 is electrically connected with the resonant circuit 4; the transistor also comprises a spike absorption circuit 6, and the spike absorption circuit 6 is connected between the gate of the MOS transistor Q1 and the ground. In this embodiment, the microprocessor 2 chip has a model number of ESM8BD 10.
During operation, microprocessor 2 output PWM ripples to high frequency square wave generating circuit 3, and the MOS pipe Q1 among the PWM ripples control high frequency square wave generating circuit 3 is constantly switched on and off to inductance L1 in resonance circuit 4 constantly charges and discharges, makes the ultrasonic atomization piece W among resonance circuit 4 vibrate and produces the cigarette. The utility model discloses in, even have peak absorption circuit 6 on MOS pipe Q1 grid for absorb the high-pressure peak that flows over above the MOS pipe Q1 grid, thereby the front end driver chip that the protection links to each other with MOS pipe Q1 grid improves product reliability and yield.
The high-frequency square wave generating circuit 3 comprises a PWM (pulse-width modulation) amplifying circuit 301 and a MOS (metal oxide semiconductor) tube switching circuit 302; the MOS tube switching circuit 302 comprises the MOS tube Q1; the output end of the microprocessor 2 is electrically connected with the gate of a MOS transistor Q1 through a PWM amplifying circuit 301, and the source of the MOS transistor Q1 is grounded.
The PWM wave output by the microprocessor 2 is amplified by the PWM amplifying circuit 301, and then output to the MOS transistor switching circuit 302 and used for controlling the uninterrupted switching of the MOS transistor Q1 in the MOS transistor switching circuit 302, so as to realize the uninterrupted charging and discharging of the inductor L1 in the resonant circuit 4, thereby generating a high-voltage high-frequency half-sine oscillation signal on the inductor L1 to drive the ultrasonic atomization sheet W to work.
The resonant circuit 4 further comprises a first capacitor C1 connected in series with the ultrasonic atomization sheet W. The capacitance value of the first capacitor C1 is smaller, and the first capacitor C1 is mainly used for reducing or eliminating the interference effect of parasitic capacitance in the ultrasonic atomization sheet W, so that the resonance effect is better.
The PWM amplifying circuit 301 comprises a first resistor R1, a square wave amplifier U1, and a second capacitor C2, and the MOS transistor switch circuit 302 further comprises a second resistor R2 and a third resistor R3; the output end of the microprocessor 2 is electrically connected with the input end of a square wave amplifier U1, a first resistor R1 is connected between the output end of the microprocessor 2 and the ground, the power supply end of a square wave amplifier U1 is grounded through a second capacitor C2, the output end of the square wave amplifier U1 is electrically connected with the grid of a MOS tube Q1 through a second resistor R2, and a third resistor R3 is connected between the grid of the MOS tube Q1 and the ground. In this embodiment, the square wave amplifier U1 is model SDM 48000.
The peak absorption circuit 6 comprises a PNP type triode Q2, wherein an emitter of the PNP type triode Q2 is electrically connected with a gate of the MOS transistor Q1, a collector of the PNP type triode Q2 is grounded, and a base of the PNP type triode Q2 is electrically connected with an output end of the square wave amplifier U1. The PNP transistor Q2 is a high voltage PNP transistor for releasing the high voltage spike flowing backward from the drain of the MOS transistor Q1 to the top of the second resistor R2 through the junction capacitor between GD (gate drain).
The resonant circuit 4 further comprises an inductor L1, the output end of the power module 1 is electrically connected with the drain of the MOS transistor Q1 through the inductor L1, one electrode layer of the ultrasonic atomization sheet W is electrically connected with the drain of the MOS transistor Q1, and the other electrode layer of the ultrasonic atomization sheet W is grounded.
During operation, the microprocessor 2 outputs a PWM wave to the high-frequency square wave generating circuit 3, the PWM wave controls the MOS tube Q1 in the high-frequency square wave generating circuit 3 to be switched on and off continuously, and continuous charging and discharging of the inductor L1 are achieved, so that a high-voltage high-frequency semi-sinusoidal oscillation signal is generated on the inductor L1 to drive the ultrasonic atomization sheet W to work. Specifically, in the case of a single PWM oscillation period, when the second resistor R2 passes through a high level, the MOS transistor Q1 is turned on, the inductor L1 is grounded and starts to store energy, and at this time, the emitter and base voltages of the PNP transistor Q2 are the same, and the PNP transistor Q2 is not turned on; when the second resistor R2 passes through the low level, the MOS transistor Q1 is turned off, and after the self-induced electromotive force of the inductor L1 and the voltage VCC provided by the power module 1 are superimposed, a high-voltage half sine wave is formed at one end of the ultrasonic atomization sheet W to drive the ultrasonic atomization sheet W to work. The high voltage flows back to the second resistor R2 through the junction capacitor between the gate and the drain of the MOS transistor Q1, and at this time, the output terminal of the square-wave amplifier U1 (i.e., the seventh pin OUTA of U1) is pulled to GND, so the emitter of the PNP transistor Q2 is connected to the high voltage spike, the base of the PNP transistor Q2 is grounded, and the PNP transistor Q2 is turned on. Due to the high switching speed of the transistor, the high-voltage spike on the second resistor R2 can be quickly released through the CE electrode (collector-emitter) of the PNP transistor Q2, so that the output end of the square wave amplifier U1 (i.e., the seventh pin OUTA of U1) is protected, and the square wave amplifier U1 is prevented from being burned out.
The ultrasonic atomization plate working circuit further comprises a current acquisition circuit 5 used for acquiring working current between the source electrode of the MOS tube Q1 and the ground, and the output end of the current acquisition circuit 5 is electrically connected with the input end of the microprocessor 2. The current collecting circuit 5 is used for collecting working current and sending to the microprocessor 2, so that the microprocessor 2 adjusts the frequency of the output PWM (pulse-width modulation) wave according to the working current, and finally the power adjustment of the ultrasonic atomization sheet W is realized.
The current acquisition circuit 5 comprises a fourth resistor R4 (with extremely small resistance), a fifth resistor R5 and a third capacitor C3, the fifth resistor R5 is connected between the source of the MOS transistor Q1 and the ground, the source of the MOS transistor Q1 is grounded through the fourth resistor R4 and the third capacitor C3 in sequence, and the input end of the microprocessor 2 is connected between the fourth resistor R4 and the third capacitor C3.
The power module 1 includes a battery 101 and a booster module 102, and the battery 101 is electrically connected to the resonant circuit 4 through the booster module 102. The power supply module 1 is good in universality because the battery 101 is used for supplying power and the voltage of the battery 101 is boosted to the voltage required by oscillation of the resonant circuit 4 by the aid of a boosting chip in the boosting module 102.
The battery 101 is a rechargeable battery, such as a rechargeable lithium battery. Accordingly, the power module 1 further includes a charging circuit and a discharge protection circuit, the structures of which are not shown in the drawings, but do not affect the understanding and implementation of the present invention by those skilled in the art.
The embodiments of the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the above-mentioned embodiments, which are only illustrative and not restrictive, and those skilled in the art can make many forms without departing from the spirit and scope of the present invention, which is within the protection scope of the present invention.

Claims (10)

1. An ultrasonic atomization sheet working circuit comprises a power supply module (1), a microprocessor (2), a high-frequency square wave generating circuit (3) and a resonant circuit (4), wherein the output end of the power supply module (1) is electrically connected with the resonant circuit (4), and the output end of the microprocessor (2) is electrically connected with the resonant circuit (4) through the high-frequency square wave generating circuit (3); the ultrasonic atomization sheet (W) is connected in series in the resonance circuit (4); the high-frequency square wave generating circuit (3) comprises an MOS (metal oxide semiconductor) tube (Q1), and the drain electrode of the MOS tube (Q1) is electrically connected with the resonance circuit (4);
the transistor is characterized by further comprising a spike absorption circuit (6), wherein the spike absorption circuit (6) is connected between the grid of the MOS transistor (Q1) and the ground.
2. The ultrasonic atomizing plate operating circuit according to claim 1, wherein said high-frequency square wave generating circuit (3) includes a PWM amplifying circuit (301) and a MOS transistor switching circuit (302); the MOS tube switching circuit (302) comprises the MOS tube (Q1); the output end of the microprocessor (2) is electrically connected with the grid electrode of the MOS tube (Q1) through the PWM amplifying circuit (301), and the source electrode of the MOS tube (Q1) is grounded.
3. An operating circuit for an ultrasonic atomizing plate according to claim 1 or 2, characterized in that said resonant circuit (4) further comprises a first capacitor (C1) connected in series with the ultrasonic atomizing plate (W).
4. The ultrasonic atomizing plate working circuit according to claim 2, characterized in that said PWM amplifying circuit (301) comprises a first resistor (R1), a square wave amplifier (U1), a second capacitor (C2), said MOS transistor switch circuit (302) further comprises a second resistor (R2) and a third resistor (R3); the output end of the microprocessor (2) is electrically connected with the input end of a square wave amplifier (U1), a first resistor (R1) is connected between the output end of the microprocessor (2) and the ground, the power supply end of the square wave amplifier (U1) is grounded through a second capacitor (C2), the output end of the square wave amplifier (U1) is electrically connected with the grid of a MOS (Q1) through a second resistor (R2), and a third resistor (R3) is connected between the grid of the MOS (Q1) and the ground.
5. The ultrasonic atomizing plate operating circuit according to claim 4, characterized in that the spike absorption circuit (6) comprises a PNP type triode (Q2), the emitter of the PNP type triode (Q2) is electrically connected with the gate of the MOS transistor (Q1), the collector of the PNP type triode (Q2) is grounded, and the base of the PNP type triode (Q2) is electrically connected with the output end of the square wave amplifier (U1).
6. The ultrasonic atomization plate working circuit of claim 1 or 2, wherein the resonant circuit (4) further comprises an inductor (L1), the output end of the power module (1) is electrically connected with the drain of the MOS transistor (Q1) through the inductor (L1), one electrode layer of the ultrasonic atomization plate (W) is electrically connected with the drain of the MOS transistor (Q1), and the other electrode layer of the ultrasonic atomization plate (W) is grounded.
7. The ultrasonic atomization plate working circuit of claim 2, further comprising a current collection circuit (5) for collecting the working current between the source of the MOS transistor (Q1) and the ground, wherein the output end of the current collection circuit (5) is electrically connected with the input end of the microprocessor (2).
8. The working circuit of the ultrasonic atomization plate as claimed in claim 7, wherein the current collection circuit (5) comprises a fourth resistor (R4), a fifth resistor (R5) and a third capacitor (C3), the fifth resistor (R5) is connected between the source of the MOS transistor (Q1) and the ground, the source of the MOS transistor (Q1) is grounded sequentially through the fourth resistor (R4) and the third capacitor (C3), and the input end of the microprocessor (2) is connected between the fourth resistor (R4) and the third capacitor (C3).
9. An ultrasonic atomizing plate operating circuit according to claim 1, characterized in that said power supply module (1) includes a battery (101) and a voltage boosting module (102), and the battery (101) is electrically connected to the resonance circuit (4) through the voltage boosting module (102).
10. An ultrasonic electronic cigarette, characterized by comprising the ultrasonic atomization sheet working circuit according to any one of claims 1 to 9.
CN201922033458.8U 2019-11-22 2019-11-22 Ultrasonic atomization piece working circuit and ultrasonic electronic cigarette Active CN211510564U (en)

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CN201922033458.8U CN211510564U (en) 2019-11-22 2019-11-22 Ultrasonic atomization piece working circuit and ultrasonic electronic cigarette

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112641131A (en) * 2020-11-27 2021-04-13 上海烟草集团有限责任公司 Controllable liquid fog of filter effect filters smoking set

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112641131A (en) * 2020-11-27 2021-04-13 上海烟草集团有限责任公司 Controllable liquid fog of filter effect filters smoking set

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