CN211507639U - Special high-power rectifier tube chip for permanent magnet motor - Google Patents
Special high-power rectifier tube chip for permanent magnet motor Download PDFInfo
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- CN211507639U CN211507639U CN202020340874.2U CN202020340874U CN211507639U CN 211507639 U CN211507639 U CN 211507639U CN 202020340874 U CN202020340874 U CN 202020340874U CN 211507639 U CN211507639 U CN 211507639U
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Abstract
The utility model provides a special high-power rectifier tube chip of permanent-magnet machine, the chip axial adopts the positive pole P + -base region N-negative pole N +'s thin slice structure, and the positive pole plane adopts the plane withstand voltage structure of many rings of equipotential rings, and chip plane withstand voltage district adopts inorganic material glass passivation protection, and perpendicular terminal edge has N + guard area, and the forward voltage drop that its N-base region produced is about the quarter of traditional handicraft product; the value of the reverse repeated peak current at normal temperature and high temperature is as low as nearly one order of magnitude; the working junction temperature is increased by 20-30 ℃; has the advantages that: the product has lower positive peak voltage VFMHigher inverted repeat peak voltage VRRMSmaller inverted repeat peak current IRRMAnd can withstand higher temperature.
Description
Technical Field
The utility model belongs to among "2018 state key high-tech field catalogue of supporting": the technical field of ' I, electronic information ' -six novel electronic components-3. high-power semiconductor devices '.
Background
Permanent magnet motors, including permanent magnet generators and permanent magnet motors, are gaining popularity in industrial and agricultural production due to their advantages of energy saving, material saving, long life, small size, light weight, etc. Especially, mobile equipment and new energy equipment are used in a large area. The permanent magnet motor is combined with intelligent drive control, reverse operation can be realized, and the characteristic plays a role which cannot be replaced by the traditional motor in special equipment. For example, on an electric bus or a high-speed rail, when a vehicle starts or runs at a high speed, the permanent magnet motor is connected into a permanent magnet motor running mode, the motor converts electric energy of a power supply into mechanical energy, and the vehicle is driven to accelerate or run at a constant speed; when the vehicle decelerates or enters a station, the permanent magnet motor is connected into a permanent magnet generator running mode, and the motor converts the kinetic energy of the vehicle into electric energy and returns the electric energy to a power supply. Therefore, not only is energy saved, but also friction plates are saved and heating faults are avoided.
All the permanent magnet motors are connected with the power supply, and no high-power semiconductor device is used. Commonly used high power semiconductor devices are: a dedicated rectifying device, a dedicated thyristor device, a metal-oxide-semiconductor field effect device (MOSFET), an insulated gate bipolar transistor device (IGBT). These semiconductor devices share some common features: high power (controlling several KW to several tens of KW), high back pressure (several KV to tens of KV), strong current (hundreds A to thousands A), high frequency (several KHz to tens KHz), and large temperature difference of use environment (minus 40 deg.C to minus 40 deg.C). The design and production of the high-power semiconductor devices are different from those of common semiconductor devices, and have special structural design and process design.
The design of the domestic current high-current common rectifier tube product refers to the national recommended standard: JB-T8949.2-2013 section 2 of common rectifier tube. Some technical parameter indexes can not meet the requirement of permanent magnet motor standard collection. For example: the working junction temperature Tj is-40 ℃ to +150 ℃, and the high temperature upper limit cannot be suitable for the severe environment of the permanent magnet motor; rated reverse repetitive peak voltage VRRMLess than 3000V, the upper limit of voltage isThe method is not suitable for 5000V high back pressure possibly borne by a permanent magnet motor circuit; positive peak voltage VFM2V, the motor is not suitable for the energy-saving requirement of a permanent magnet motor; inverse repetitive peak current IRRMLess than or equal to 60mA, and can not meet the reliability requirement of the permanent magnet motor. The high-power rectifier chip special for the permanent magnet motor has higher index requirement.
In the production of the current common rectifier chip in China, an N-type monocrystalline silicon wafer is used as a raw material, and the traditional process is adopted: the chip adopts a P + -N + thick sheet structure in the axial direction, the edge of the chip adopts a table-board pressure-resistant structure with a mechanical angle (20-35 degrees), and the table-board pressure-resistant area of the chip is protected by organic materials (silicon rubber, polyester imide and the like). Although the technical structure is brought into full play by various manufacturers, the special high-power rectifier chip for the permanent magnet motor with high quality requirement is difficult to produce. The utility model discloses to break through this kind of traditional technology structure not can, develop the special high-power rectifier chip of permanent-magnet machine of high-quality.
SUMMERY OF THE UTILITY MODEL
The utility model provides a special high-power rectifier tube chip of permanent-magnet machine, its technology structure characterized in that: the chip is axially of a sheet structure of an anode P < + > -base region N < - > -cathode N < + >, a ring type P < + > equipotential ring is arranged on an anode plane, a reverse pressure-resistant region of the anode plane is passivated and protected by inorganic material glass, and an N < + > protection region is arranged on the edge of a vertical terminal. Can produce lower forward peak voltage VFMHigher inverted repeat peak voltage VRRMSmaller inverted repeat peak current IRRMThe high temperature resistant product of (1).
Take the design and manufacture of 4000V reverse peak voltage products as an example, analyze the difference between the traditional process structure and the process structure of the present invention. The base region reverse voltage withstanding formula of the traditional process product can use:
v94 rho (0.75 power) wherein rho is the resistivity of the N base region of the monocrystalline silicon wafer in ohm centimeter (omega cm)
Substituting V to 4000 to obtain p to 149 Ω cm
The base region thickness formula of the conventional art product can use:
d is 4.95 rho (0.875 power) wherein D is the thickness of the N base region of the monocrystalline silicon wafer and the unit is micrometer (um)
Substituting rho-149 omega cm to obtain D-394.6 um
If adopt the utility model discloses chip axial adopts the thin slice structure technology of P + -N- (N +), and the resistivity of N-base region can be followed the wide selection between 200 ~ 300 omega cm, and the electric field of N-base region presents the even strong electric field intensity distribution of approximate parallel, presents triangle-shaped electric field intensity distribution with the electric field of above-mentioned traditional technology N base region and compares, under the same reverse withstand voltage condition, the utility model discloses N-base region thickness of technology structure is about half of traditional technology N base region thickness, does: d is 394.6um/2 is 197.3 um.
There is ripe theory to point out, and the rectifier chip is when passing through forward current, and the pressure drop that the base region produced is directly proportional with the square of base region thickness, so, the utility model discloses the forward pressure drop of N base region of technology structure is about the fourth of the forward pressure drop of traditional technology N base region. Therefore, the forward peak voltage V of the special high-power rectifier chip for the permanent magnet motor is greatly reduced from the structural designFM。
The method is used for producing the special high-power rectifier chip for the permanent magnet motor with the reverse repeated peak voltage of 3000-5000V, the chip adopts a P + -N + sheet structure process in the axial direction, the resistivity of an N-base region can be selected to be 200-400 omega cm, and the thickness of the base region can be selected to be 150-260 um. The forward voltage drop generated by the N-base region is about one fourth of the forward voltage drop generated by the N-base region (280-510 um) in the traditional process.
The attached figure 1 of the specification shows a mesa voltage-resistant structure of a chip edge of a common rectifier chip in the traditional process, wherein the mesa voltage-resistant structure adopts a mechanical angle, and the distribution of power lines and equipotential lines of the chip when the chip bears reverse voltage is marked on the graph. The chip is voltage-resistant by a table inclined plane formed by machining, reverse voltage is loaded on a voltage-resistant section of a single section, and the electric field intensity generated on the table top is stronger.
The attached figure 2 of the specification shows that the edge of the chip of the utility model adopts the plane pressure-resistant structure of a plurality of circles of equipotential rings, and the distribution situation of the power lines and the equipotential lines of the chip when bearing reverse voltage is marked on the figure. As can be seen from the figure, the chip is voltage-resistant by the plane of the multi-segment P-type planar equipotential ring formed by the planar process, the reverse voltage borne by the chip is respectively applied to the multi-segment voltage-resistant sections, the reverse voltage borne by each segment is only one N (N is the number of segments) of the reverse voltage borne by the chip, and the electric field intensity generated on each segment plane is weak. Obviously, under the condition that the chip bears the same reverse voltage, the generated reverse repeated peak current is smaller, the high-temperature characteristic is better, and the reliability of the product is higher.
The special high-power rectifier tube chip for the permanent magnet motor with the reverse repeated peak voltage less than or equal to 3000V is produced, a P + type equipotential ring is adopted, and when the chip bears the reverse voltage, a two-section voltage-resistant interval is formed; the high-power rectifier tube chip special for the permanent magnet motor with the reverse repeated peak voltage of 3000-5000V is produced, two P + type equipotential rings are adopted, and when the high-power rectifier tube chip bears the reverse voltage, three voltage-resistant sections are arranged.
The specification and the attached figure 2 show that the inorganic glass material passivation protective layer is covered on the reverse voltage-proof area. A large amount of test data show that compared with the high-power rectifier chip passivated and protected by the organic material, the high-power rectifier chip passivated and protected by the inorganic glass material has the numerical value of the reverse repetitive peak current which is nearly an order of magnitude lower in the normal temperature and high temperature states; the working junction temperature is increased by 20-30 ℃.
The thickness of the inorganic glass material used by the high-power rectifier tube chip special for the permanent magnet motor needs to not only consider the stress generated between the inorganic glass material and the silicon material due to the difference of the thermal expansion coefficients, but also meet the requirement of electrical breakdown. Producing a special high-power rectifier tube chip for the permanent magnet motor with the reverse repetition peak voltage less than or equal to 3000V, wherein the thickness of the inorganic glass protective material is 100-150 um; the special high-power rectifier chip for the permanent magnet motor with the reverse repeated peak voltage of 3000-5000V is produced, and the thickness of the inorganic glass material is 150-200 um.
The thickness of the anode and the equipotential ring P + area used by the high-power rectifier tube chip special for the permanent magnet motor is 50-100 um, and the thickness of the cathode N + area is 40-80 um.
The terminal of the special high-power rectifier tube chip for the permanent magnet motor uses a vertical surface. In the chip later stage assembly process, probably there is impurity interference on the terminal surface, makes the high temperature characteristic of chip worsen, reverse electric leakage increase, so be equipped with the N + guard block on perpendicular terminal surface, the width in guard block is 30 ~ 60 um.
To sum up, the utility model provides a special high-power rectifier tube chip of permanent-magnet machine, the chip axial adopts the anode P + -base region N-negative pole N +'s thin slice structure, and the anode plane adopts the plane withstand voltage structure of many rings equipotential rings, and the chip plane withstand voltage district adopts inorganic material glass passivation protection, and perpendicular terminal edge has N + guard space. The product has lower positive peak voltage VFM，Higher inverted repeat peak voltage VRRM，Smaller inverted repeat peak current IRRMAnd can withstand higher temperature.
Drawings
Fig. 1 is a cross-sectional view of a chip structure of a common rectifier chip in a conventional process. In the figure, the edge adopts a mesa voltage-resistant structure with a mechanical bevel angle, the cathode is N +, the base is N, the anode is P + along the axial direction of the chip, an organic protective layer B is arranged on the bevel mesa, a thin solid line with an arrow indicates the distribution of electric lines of the chip when the chip bears reverse voltage, and a thin dotted line indicates the distribution of equipotential lines of the chip when the chip bears reverse voltage.
Fig. 2, the utility model relates to a special high-power rectifier tube chip structure chart of permanent-magnet machine. In the figure, the edge adopts a vertical structure, an N + protection region F is arranged on the surface of a vertical terminal, an anode P + region, a light base region N-, a cathode N + region are respectively arranged along the axial direction of the chip, a first ring of equipotential rings P +1 and a second ring of equipotential rings P +2 are arranged on a plane parallel to the anode, an inorganic glass protection layer B is arranged on the surface of the anode edge and the equipotential rings, a thin solid line with an arrow indicates the distribution situation of a power line of the chip when the chip bears reverse voltage, and a thin dotted line indicates the distribution situation of an equipotential line of the chip when the chip bears reverse voltage.
Detailed Description
The technical scheme belongs to the field of semiconductor production, the implementation process adopts a semiconductor process technology, and the following steps are described in a dividing manner:
forming an N-base region: the N-base region is determined by a monocrystalline silicon material, and the resistivity of the monocrystalline silicon piece can be selected according to 200-400 omega cm required in the content of the utility model of the specification: the thickness of the base region can be selected from 150 to 260um as required in the present description: the thickness of the crystal silicon wafer can be determined according to the thickness of the N-base region, the thickness of the P + region and the thickness of the N + region.
Formation of P + and N + regions: the diffusion method is adopted for formation, and the concentration and the depth of the diffusion method are determined by factors such as impurities, temperature, time and the like used for diffusion.
Formation of P + equipotential rings: oxidation, photoetching and shielding diffusion processes are adopted. The specific process is that the surface of the P + region before diffusion is subjected to an oxidation process to generate an oxide layer with the thickness of about 1 um; the oxide layer is 'windowed' by adopting a photoetching technology, namely the oxide layer of the part needing to diffuse the P + region and the P + equipotential ring part is removed; then, a shielding diffusion process is adopted, and a P + region and a P + equipotential ring are formed at the windowed part.
Forming an inorganic glass protective layer: any of a knife-scraping method, an electrophoresis method, and a photoresist method can be used. The specific process is that inorganic glass powder is coated on the edge of the anode and the surface of the equipotential ring by adopting any one of the three processes, the coated inorganic glass powder is sent into a glass passivation furnace for high-temperature passivation, and then the glass passivation furnace is cooled slowly and exits from the passivation furnace.
Formation of N + protection regions on the vertical termination surface: can be formed by ion injection; or the laser is firstly used for burning and melting into continuous dotted line holes along the terminal line of the cathode surface of the chip and then the dotted line holes are formed when the N + region is diffused.
Claims (6)
1. The utility model provides a special high-power rectifier tube chip of permanent-magnet machine which characterized in that: the chip is axially of a sheet structure of an anode P < + > -base region N < - > -cathode N < + >, a plurality of circles of P < + > equipotential rings are arranged on the anode plane, the plane reverse pressure-resistant region is passivated and protected by inorganic material glass, and the edge of the vertical terminal is provided with an N < + > protection region.
2. The special high-power rectifier chip for the permanent magnet motor as claimed in claim 1, wherein: the rectifier chip comprises a chip with an N-base region of 3000-5000V of reverse repeated peak voltage, wherein the resistivity of the N-base region is 200-400 omega cm, and the thickness of the base region is 150-260 mu m.
3. The special high-power rectifier chip for the permanent magnet motor as claimed in claim 1, wherein: the reverse repeated peak voltage of the ring type P + equipotential ring is less than or equal to 3000V, a P + equipotential ring is adopted, and two sections of voltage-resistant sections are arranged; the chip with the reverse repeated peak voltage of 3000-5000V adopts two P + type equipotential rings and has three voltage-resistant sections.
4. The special high-power rectifier chip for the permanent magnet motor as claimed in claim 1, wherein: the chip with the reverse repeated peak voltage less than or equal to 3000V is 100-150 um thick; the chip with the reverse repeated peak voltage of 3000-5000V is 150-200 um thick.
5. The special high-power rectifier chip for the permanent magnet motor as claimed in claim 1, wherein: the thickness of positive pole and equipotential ring P + district is 50 ~ 100um, and the thickness in negative pole N + district is 40 ~ 80 um.
6. The special high-power rectifier chip for the permanent magnet motor as claimed in claim 1, wherein: the vertical terminal surface of rectifier chip goes up N + guard space, and the width in guard space is 30 ~ 60 um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020340874.2U CN211507639U (en) | 2020-03-18 | 2020-03-18 | Special high-power rectifier tube chip for permanent magnet motor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020340874.2U CN211507639U (en) | 2020-03-18 | 2020-03-18 | Special high-power rectifier tube chip for permanent magnet motor |
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| CN211507639U true CN211507639U (en) | 2020-09-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111341835A (en) * | 2020-03-18 | 2020-06-26 | 深圳市吉胜华力科技有限公司 | Special high-power rectifier tube chip for permanent magnet motor |
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2020
- 2020-03-18 CN CN202020340874.2U patent/CN211507639U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111341835A (en) * | 2020-03-18 | 2020-06-26 | 深圳市吉胜华力科技有限公司 | Special high-power rectifier tube chip for permanent magnet motor |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200915 |