CN211507605U - 一种快速恢复二极管芯片结构 - Google Patents
一种快速恢复二极管芯片结构 Download PDFInfo
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Effective date of registration: 20210608 Address after: 518000 Room 201, building A, No. 1, Qian Wan Road, Qianhai Shenzhen Hong Kong cooperation zone, Shenzhen, Guangdong (Shenzhen Qianhai business secretary Co., Ltd.) Patentee after: Xinnan Technology (Shenzhen) Co.,Ltd. Address before: 518000 3105b, building C2, Honglong Plaza, Baomin 2nd Road, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: Shenzhen core domain United Semiconductor Technology Co.,Ltd. |
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Effective date of registration: 20220513 Address after: 215000 room 205-6, building 4, No. 209, Zhuyuan Road, high tech Zone, Suzhou, Jiangsu Province Patentee after: Suzhou jingxinlong Microelectronics Co.,Ltd. Address before: 518000 Room 201, building A, No. 1, Qian Wan Road, Qianhai Shenzhen Hong Kong cooperation zone, Shenzhen, Guangdong (Shenzhen Qianhai business secretary Co., Ltd.) Patentee before: Xinnan Technology (Shenzhen) Co.,Ltd. |
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Effective date of registration: 20230110 Address after: 200000 Pudong New Area, Shanghai, China (Shanghai) free trade trial area, No. 3, 1 1, Fang Chun road. Patentee after: Eucalyptus Core (Shanghai) Microelectronics Co.,Ltd. Address before: 215000 room 205-6, building 4, No. 209, Zhuyuan Road, high tech Zone, Suzhou, Jiangsu Province Patentee before: Suzhou jingxinlong Microelectronics Co.,Ltd. |