CN201075387Y - 贴片式功率二极管 - Google Patents

贴片式功率二极管 Download PDF

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CN201075387Y
CN201075387Y CNU2007200406129U CN200720040612U CN201075387Y CN 201075387 Y CN201075387 Y CN 201075387Y CN U2007200406129 U CNU2007200406129 U CN U2007200406129U CN 200720040612 U CN200720040612 U CN 200720040612U CN 201075387 Y CN201075387 Y CN 201075387Y
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pole piece
diode chip
lead
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王毅
蒋李望
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Yangzhou Yangjie Electronic Co Ltd
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Yangzhou Yangjie Electronic Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

贴片式功率二极管。本实用新型涉及的是电子整流器件。它包括玻璃钝化二极管芯片、设在玻璃钝化二极管芯片的两面用于连接极片的焊片、连接在底部的底面极片，在玻璃钝化二极管芯片的顶面焊片上连接有弧形极片；弧形极片的两端分别设有与玻璃钝化二极管芯片的顶面焊片连接的连接面和引出面；弧形极片的引出面与底面极片的引出面平行。本实用新型结构简单、导热性能好、应力小、生产制造效率高、成本低、适用于SMD工艺。

Description

贴片式功率二极管
技术领域
本实用新型涉及的是电子整流器件，尤其涉及一种贴片式二极管。
背景技术
现有技术的贴片二极管均采用框架式塑料封装结构，其允许通过的电流一般在0.5A～3A。对于要求输出电流较大的功率整流电路来说就只能选用其他封装形式的大型整流二极管器件。因此限制了先进的SMD工艺技术在大功率整流电路中的应用。
随着金属化陶瓷板和铝基敷铜板在机电产品中的广泛应用，为了解决大功率整流电路的导热散热问题，实现表面贴装结构，目前普遍采用先将二极管管芯贴装焊接到基板上，然后再用烙铁补焊管芯上部的连接片；或将玻钝二极管芯片贴装到基板上再在芯片上部点涂焊膏放上连接片，放入回流焊炉焊接成形。上述两种工艺方法除操作复杂耗用大量人工外，还会给产品留下许多质量隐患和缺陷：如烙铁补焊会因温度过高而使二极管管芯二次熔锡造成二极管电性能下降；玻钝二极管芯片直接焊接在基板上会因导热结构缺陷而降低二极管的电流通过能力等。因此要使机电产品实现高可靠、小型化、低成本其整流电路就需选用质量优良的贴片式整流器件。
实用新型内容
本实用新型的目的在于设计制造一种玻璃钝化二极管芯片的PN可以平行于电路及导热基板并通过焊接在芯片底部的极片吸收和向基板传递二极管芯片PN热能，它可使贴片式二极管通过的电流最高达25A；玻璃钝化二极管芯片上部焊接的弧形极片可使二极管的两个引出端在同一平面上，从而改变传统二次焊接的使用方法。提供结构简单、导热性能好、通过电流大、生产制造效率高、成本低的贴片式功率二极管。
本实用新型的技术方案是：包括玻璃钝化二极管芯片(2)、设在玻璃钝化二极管芯片(2)的两面用于连接极片的焊片(3)、连接在底部的底面极片(1)，在玻璃钝化二极管芯片(2)的顶面焊片(3)上连接有弧形极片(4)；弧形极片(4)的两端分别设有与玻璃钝化二极管芯片(2)的顶面焊片(3)连接的连接面和引出面；弧形极片(4)的引出面与底面极片(1)的引出面平行。
底部极片(1)为圆形，其直径大于或等于玻璃钝化二极管芯片(2)的外接圆直径。
弧形极片(4)的引出面与底面极片(1)的引出面在同一平面上。
本实用新型的特点是：1、焊接在玻璃钝化二极管芯片衬底面的底部极片可将玻璃钝化二极管芯片工作时PN结产生的热量迅速吸收并传递到电路基板上散热，并能增加玻璃钝化二极管芯片的机械强度；2、焊接在玻璃钝化二极管芯片上部的弧形极片使平行于基板的玻璃钝化二极管芯片的另一个极转接到基板平面上，其圆弧形状可以减小因安装焊接而对玻璃钝化二极管芯片产生的应力；3、采用玻璃钝化二极管芯片其具有较好的温度特性，适合功率整流电路；4、生产工艺简洁和裸露结构降低了制造成本。本实用新型结构简单、导热性能好、应力小、生产制造效率高、成本低、适用于SMD工艺。
附图说明
图1是本实用新型的结构示意图
图中1是底部极片，2是玻璃钝化二极管芯片，3是焊片，4是弧形极片。
图2是图1的俯视图
具体实施方式
如图，本实用新型包括玻璃钝化二极管芯片2、设在玻璃钝化二极管芯片2的两面用于连接极片的焊片3、连接在底部的底面极片1，在玻璃钝化二极管芯片2的顶面焊片3上连接有弧形极片4；弧形极片4的两端分别设有与玻璃钝化二极管芯片2的顶面焊片3连接的连接面和引出面；弧形极片4的引出面与底面极片1的引出面平行。
作为本实用新型的另一种实施方式，本实用新型中底部极片1可为圆形，其直径大于或等于玻璃钝化二极管芯片2的外接圆直径。
当本实用新型的两引出面需要连接在平面电路板上时，弧形极片4的引出面与底面极片1的引出面在同一平面上。
加工本实用新型时，在玻璃钝化二极管芯片2的衬底面通过焊片3焊接底部极片1；玻璃钝化二极管芯片2的另一面通过焊片3焊接弧形极片4一端；弧形极片4的另一端和底部极片1的底面在同一平面上，它们作为贴片式功率二极管的两个引出端，可以采用SMD工艺将该贴片式功率二极管安装焊接到电路基板上。

Claims (3)

1.一种贴片式功率二极管，包括玻璃钝化二极管芯片(2)、设在玻璃钝化二极管芯片(2)的两面用于连接极片的焊片(3)、连接在底部的底面极片(1)，其特征在于：在玻璃钝化二极管芯片(2)的顶面焊片(3)上连接有弧形极片(4)；弧形极片(4)的两端分别设有与玻璃钝化二极管芯片(2)的顶面焊片(3)连接的连接面和引出面；弧形极片(4)的引出面与底面极片(1)的引出面平行。
2.根据权利要求1所述的贴片式功率二极管，其特征在于：底部极片(1)为圆形，其直径大于或等于玻璃钝化二极管芯片(2)的外接圆直径。
3.根据权利要求1所述的贴片式功率二极管，其特征在于：弧形极片(4)的引出面与底面极片(1)的引出面在同一平面上。
CNU2007200406129U 2007-07-09 2007-07-09 贴片式功率二极管 Expired - Fee Related CN201075387Y (zh)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102299131A (zh) * 2011-09-09 2011-12-28 南通康比电子有限公司 一种sod-123封装结构的二极管
CN102569106A (zh) * 2011-12-10 2012-07-11 中国振华集团永光电子有限公司 实现玻璃钝化二极管大功率应用的方法及器件
CN102723327A (zh) * 2012-06-15 2012-10-10 佛山市顺德区瑞淞电子实业有限公司 一种豆浆机用新型整流桥
CN102800586A (zh) * 2012-08-28 2012-11-28 绍兴文理学院 一种片式功率二极管设计工艺
CN105743363A (zh) * 2016-04-25 2016-07-06 蒋李望 一种磁电机用单相整流、电压调节功率模块及其制作方法
CN107039384A (zh) * 2017-04-29 2017-08-11 深圳市劲阳电子有限公司 一种贴片式元件

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102299131A (zh) * 2011-09-09 2011-12-28 南通康比电子有限公司 一种sod-123封装结构的二极管
CN102569106A (zh) * 2011-12-10 2012-07-11 中国振华集团永光电子有限公司 实现玻璃钝化二极管大功率应用的方法及器件
CN102569106B (zh) * 2011-12-10 2015-04-15 中国振华集团永光电子有限公司 实现玻璃钝化二极管大功率应用的方法
CN102723327A (zh) * 2012-06-15 2012-10-10 佛山市顺德区瑞淞电子实业有限公司 一种豆浆机用新型整流桥
CN102723327B (zh) * 2012-06-15 2015-05-13 佛山市顺德区瑞淞电子实业有限公司 一种豆浆机用新型整流桥
CN102800586A (zh) * 2012-08-28 2012-11-28 绍兴文理学院 一种片式功率二极管设计工艺
CN102800586B (zh) * 2012-08-28 2015-07-15 绍兴文理学院 一种片式功率二极管设计工艺
CN105743363A (zh) * 2016-04-25 2016-07-06 蒋李望 一种磁电机用单相整流、电压调节功率模块及其制作方法
CN107039384A (zh) * 2017-04-29 2017-08-11 深圳市劲阳电子有限公司 一种贴片式元件

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