CN211453448U - Measuring device for dynamic resistance of bismuth-silicon high-temperature melt - Google Patents

Measuring device for dynamic resistance of bismuth-silicon high-temperature melt Download PDF

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Publication number
CN211453448U
CN211453448U CN202020021210.XU CN202020021210U CN211453448U CN 211453448 U CN211453448 U CN 211453448U CN 202020021210 U CN202020021210 U CN 202020021210U CN 211453448 U CN211453448 U CN 211453448U
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temperature
bismuth
electric heating
furnace
measuring
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Chinese (zh)
Inventor
郭宏伟
高档妮
王宇飞
宋建波
宁峰鸣
罗亚丽
赵聪聪
池龙兴
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Shaanxi University of Science and Technology
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Shaanxi University of Science and Technology
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Abstract

The utility model discloses a measuring device of bismuth silicon high-temperature melt dynamic resistance, which comprises a control box and a heating furnace, wherein a temperature control thermocouple extending into the furnace shell is arranged on the furnace shell of the heating furnace in a penetrating way, the temperature control thermocouple is connected with a temperature controller arranged outside the furnace shell, and a temperature display screen for displaying the temperature collected by the temperature control thermocouple is arranged on the control box; a high-temperature-resistant test container is arranged in the furnace shell, electrode plates are arranged on two sides of the high-temperature-resistant test container, a binding post extending out of the furnace shell is connected on each electrode plate, and the binding post is connected with a resistance measuring device arranged on the control box; the method can dynamically and accurately measure the resistance of the high-temperature erosive silicon bismuth melt.

Description

Measuring device for dynamic resistance of bismuth-silicon high-temperature melt
Technical Field
The utility model belongs to the technical field of in high temperature dynamic test, a measuring device of bismuth silicon high temperature fuse-element dynamic resistance is related to.
Background
Glass has the characteristics of ionic conduction and electronic conduction. Some transition element oxide glasses and chalcogenide semiconductor glasses have electron-conducting properties, while general silicate glasses are ion-conducting.
The ion conduction is that ions are used as a carrier, and under the action of an external electric field, the probability that the original non-directional ionic thermal motion of the carrier is brought into the direction of the electric field is increased, and the carrier is converted into directional movement to show the conductivity. The carrier is usually a cation in the glass, and in particular, in the case of a large difference in the mobility contained in the glass, the entire current is almost carried by one type of cation. For example, in Na2O-CaO-SiO2 glass, it is believed that all is transported by Na +, while the effect of Ca2+ is negligible. At normal temperature, the anion group in the glass, which is a silica skeleton or a boroxy skeleton, has almost no ability to move under the action of an external electric field. When the temperature rises above the softening temperature of the glass, anions in the glass begin to participate in the transfer of current, and as the temperature rises, the number of alkali ions and anions participating in the transfer also gradually increases.
The analysis is carried out according to the meaning of the high-temperature resistivity test of the glass melt, and the analysis of the resistivity parameter change of the glass melt can provide a good reference function for the adjustment of a material prescription at different temperatures; in the electric melting-assistant kiln, the high-temperature resistivity change of the glass melt is a key index directly related to whether the molten glass liquid can effectively promote the melting of the glass, reduce stones, promote junification and clarification and reduce glass defects; knowledge of the high temperature resistivity of the relevant glass melt is a prerequisite for the design of an electrically assisted melting furnace.
The invention discloses a method for testing high-temperature resistivity of a glass melt, which comprises the following steps: s1, crushing the frit to be tested and placing the crushed frit into a porcelain boat, and fixing platinum sheets on two sides of the porcelain boat; s2, placing the porcelain boat on a lifting platform of the vertical high-temperature furnace, and tightly contacting with a thermocouple of the vertical high-temperature furnace; the platinum sheet is connected with the testing end of the digital bridge meter through a platinum wire; s3, heating the vertical high-temperature furnace through a temperature controller to melt the glass material in the porcelain boat; s4, cooling the vertical high-temperature furnace, testing the resistance value of the molten glass material through a digital bridge meter in the cooling process to obtain a group of corresponding resistance values at different temperatures in the cooling process, and subtracting the resistance values of the platinum sheet and the platinum wire from each resistance value to obtain the corresponding resistance values R of the glass melt at different temperatures; and S5, taking out the porcelain boat after cooling to room temperature, measuring the length L and the sectional area S of the glass body, and calculating according to a formula to obtain the resistivity rho of the glass melt at different temperatures. The method tests that the position of the platinum sheet in the glass melt has abnormal motion along with the temperature change, the section in a cooling state cannot represent the interface of the melt at high temperature, the measurement error is large, and the test repeatability is poor.
The invention discloses a CN 106018965A method for detecting a precision resistor prepared on optical glass, which comprises the steps of surface cleaning, conductive silver wire treatment, conductive adhesive bonding, conductive adhesive curing, precision resistor testing and the like; according to the invention, on the precision resistor prepared on the optical glass, the conductive adhesive is used as the solder, the conductive silver wire and the precision resistor form ohmic contact, the welding reliability of the lead is ensured, the contact resistance is stabilized between 0.1 +/-0.05 omega, and the detection accuracy of the precision resistor is ensured. The detection method provided by the invention realizes the resistance value of the precision resistor between-10 ℃ and 100 ℃, accurately judges the fluctuation of the resistance value of the precision resistor prepared on the optical glass, ensures the precision resistor measurement on the optical glass preparation, and effectively improves the yield of an optical system from 10% to more than 90%. The method can only test the resistance of the glass at low temperature, and cannot dynamically test the resistivity of the corroded high-temperature melt. Therefore, in order to reduce the cost, a measuring device capable of dynamically and accurately measuring the resistance of the high-temperature erosive silicon bismuth melt is urgently needed.
SUMMERY OF THE UTILITY MODEL
The utility model provides a technical problem lie in providing a measuring device of bismuth silicon high temperature melt dynamic resistance that can developments precision measurement nature silicon bismuth melt resistance.
The utility model discloses a realize through following technical scheme:
a measuring device for a dynamic resistance of a bismuth-silicon high-temperature melt comprises a control box and a heating furnace, wherein a temperature control thermocouple extending into a furnace shell is arranged on the furnace shell of the heating furnace in a penetrating manner and is connected with a temperature controller arranged on the outer side of the furnace shell, and a temperature display screen for displaying the temperature collected by the temperature control thermocouple is arranged on the control box; the high-temperature-resistant testing device is characterized in that a high-temperature-resistant testing container for containing bismuth silicon high-temperature melt is arranged in the furnace shell, electrode plates are arranged on two sides of the high-temperature-resistant testing container, binding posts extending out of the furnace shell are connected onto the electrode plates, and the binding posts are connected with a resistance measuring device arranged on the control box.
Further, the heating furnace is a horizontal cylindrical electric heating furnace with a heat-insulating material arranged on the inner side; the inner wall of the furnace shell of the electric heating furnace is sequentially provided with an electric heating wire and a corundum ceramic tube.
Furthermore, a heat preservation system connected with the electric heating wire and the temperature control thermocouple is also arranged on the control box.
Further, the heat insulation material is heat insulation asbestos, and the electric heating wire is a nickel-chromium electric heating wire; the control box is also provided with a current meter and a voltmeter which are used for displaying the current and the voltage of the electric heating wire.
Furthermore, the high-temperature resistant test container is a high-purity alumina test container, and the temperature control thermocouple is positioned right above the high-purity alumina test container.
Furthermore, the electric heating furnace is arranged at the upper end of the control box, small wheels used for moving the electric heating furnace are arranged on the electric heating furnace, and a track matched with the small wheels is arranged on the control box.
Furthermore, the temperature control thermocouple is a nickel-chromium-nickel-silicon thermocouple.
Further, the resistance measuring device adopts a universal meter, and the measuring range of the universal meter is 0-20 megaohms.
Compared with the prior art, the utility model discloses following profitable technological effect has:
the utility model provides a bismuth silicon high temperature melt dynamic resistance measuring device, the high temperature resistant test container is internally provided with bismuth silicate to be measured after high temperature melting and cooling, and then is arranged in a heating furnace, and the heating furnace is heated, collects temperature through a temperature control thermocouple and displays the temperature through a temperature display screen; the binding posts arranged at the two ends of the high-temperature resistant test container are connected with a resistance measuring device arranged on the control box, and can measure the dynamic resistance of the bismuth-silicon high-temperature melt in the heating process; then a temperature and resistance curve graph is made, so that the dynamic resistance of the silicon bismuth melt with high temperature erosiveness can be dynamically and accurately measured.
Drawings
Fig. 1 is a schematic structural view of the present invention;
FIG. 2 is a diagram of the structure of a high purity alumina test vessel.
The device comprises a furnace door handle, an electric heating furnace 2, a furnace plug 3, a universal meter binding post 4, a small wheel 5, a track 6, a voltmeter 7, a power switch 8, a universal meter 9, a power indicator 10, an ammeter 11, a temperature display screen 12, a container binding post 13 and a control box 14.
Detailed Description
Specific examples are given below.
As shown in figures 1 and 2, the measuring device for the dynamic resistance of the bismuth silicon high-temperature melt comprises a horizontal cylindrical electric heating furnace 2 with the power of 1.2KW, a furnace door handle 1 is arranged on the side surface of the electric heating furnace 2, and furnace plugs 3 are arranged at two ends of the electric heating furnace 2; the inner side of the furnace shell of the electric heating furnace 2 is provided with heat preservation asbestos which is used as a heat preservation material, and the surface of the heat preservation material is sequentially provided with a nickel-chromium electric heating wire and a corundum ceramic tube; a groove-shaped high-purity alumina test container serving as a high-temperature-resistant test container is arranged in a furnace shell of the electric heating furnace 2, and the high-purity alumina test container is 100mm long, 12mm deep and 10mm wide. Two sides of the high-temperature resistant test container are respectively provided with a copper or other electrode plates with good conductivity and high-temperature oxidation resistance, each electrode plate leads out a container terminal 13, the container terminal 13 extends out of the electric heating furnace 2 from the furnace plug 3, the container terminal 13 is connected with a resistance measuring device arranged on a control box 14, the resistance measuring device is a universal meter with a measuring range of 0-20 megaohms, and the voltage of a battery 9 is 9V; the universal meter can accurately measure the resistance of the substance in the high-temperature-resistant test container. A hole for penetrating a temperature control thermocouple is formed in a furnace shell of the heating furnace, the temperature control thermocouple is arranged in the hole and extends into the furnace shell, the temperature control thermocouple is located right above the high-purity alumina testing container, the accuracy of temperature measurement is guaranteed, and the temperature control thermocouple is a nickel-chromium-nickel-silicon thermocouple. And the reading of the mercury thermometer is taken as standard temperature data, and the temperature measurement accuracy of the temperature control thermocouple is corrected.
As shown in fig. 1, a control box 14 is arranged below an electric heating furnace 2, small wheels 5 for moving the heating furnace are arranged on the electric heating furnace 2, a track 6 matched with the small wheels 5 is arranged on the control box 14, and the small wheels 5 enable the electric heating furnace 2 to move to the middle position of the upper end of the control box 14; a temperature controller connected with a thermocouple is arranged on the control box 14, the temperature controller is positioned outside the heating furnace and used for controlling the heating process of the electric heating wire, and the ammeter 11 and the voltmeter 7 display the current and the voltage of the electric heating wire; a temperature display screen 12 arranged on the control box 14 displays the temperature collected by the thermocouple; the thermocouple can accurately measure the heating temperature in the heating furnace, and then accurately display the heating temperature on the temperature display screen 12, so that the reading and the recording are convenient. The control box 14 is also provided with a heat preservation system which is connected with the electric heating wire and controls the heating temperature of the electric heating furnace 2; the heat preservation system is connected with an external power supply and the thermocouple, and performs heat preservation control on the electric heating furnace 2 after reaching a certain temperature according to the temperature collected by the thermocouple. The number of the heat preservation systems is 3, one of the heat preservation systems is selected, and the other two systems are opened. The control box 14 is also provided with a power switch 8 and a power indicator lamp 10, and a multimeter 9 arranged on the control box 14 is connected with a multimeter terminal 4 and a container terminal 13 connected with an electrode slice.
The testing steps of the device are as follows:
(1) crushing and sieving a bismuth silicate sample to be tested, then cleaning and drying, then loading into a high-temperature-resistant test container, connecting container binding posts 13 at two ends of the high-temperature-resistant test container with leads and connecting the leads with a power supply, then heating and melting, and cooling to form a sample;
(2) the prepared sample and the high-temperature-resistant testing container are placed in a heating electric furnace, a furnace opening is plugged by using a furnace plug 3, conducting wires connected to two ends of a container binding post 13 are connected with a universal meter 9 binding post 4, and the heating electric furnace is moved to a set position on a track 6 through a trolley.
(3) And (3) turning on a power switch 8, heating up according to the heating rate of 3-5 ℃/min, recording the numerical values of the universal meter 9, the ammeter 11 and the temperature display screen 12, and recording the resistance numerical value of the universal meter 9 once every 5 degrees. And when the current of the ammeter 11 is unchanged within a period of time after the heating current reaches the maximum value, ending the test, turning off the power supply and stopping heating.
(4) And taking the temperature T as an abscissa and the reading of the universal meter 9 as an ordinate to make a temperature-resistance curve graph, thereby obtaining the dynamic resistance of the bismuth-silicon high-temperature melt.
The utility model discloses a temperature controller controls heating temperature and rate of rise, will notice the selection of instrument range when connecting the measurement return circuit to and whether correct is connected to container terminal 13. The utility model discloses the temperature-resistance curve that is drawn by the reading of temperature display screen 12 and the reading of universal meter 9 comes the change rule of resistance along with the temperature of various glass samples that await measuring of accurate, directly perceivedly reflection. The device has the characteristics of low cost, simple and easy operation, visual and accurate measurement, capability of dynamically measuring the corrosion-resistant high-temperature melt resistance and the like.

Claims (8)

1. The measuring device for the dynamic resistance of the bismuth-silicon high-temperature melt is characterized by comprising a control box (14) and a heating furnace, wherein a temperature control thermocouple extending into the furnace shell is arranged on the furnace shell of the heating furnace in a penetrating manner and is connected with a temperature controller arranged on the outer side of the furnace shell, and a temperature display screen (12) for displaying the temperature collected by the temperature control thermocouple is arranged on the control box (14); the high-temperature-resistant testing device is characterized in that a high-temperature-resistant testing container for containing bismuth silicon high-temperature melt is arranged in the furnace shell, electrode plates are arranged on two sides of the high-temperature-resistant testing container, container wiring terminals (13) extending out of the furnace shell are connected onto the electrode plates, and the container wiring terminals (13) are connected with a resistance measuring device arranged on a control box (14).
2. The device for measuring the dynamic resistance of the bismuth silicon high-temperature melt according to the claim 1, characterized in that the heating furnace is a horizontal barrel-shaped electric heating furnace (2) with a heat-insulating material arranged inside; the inner wall of the furnace shell of the electric heating furnace (2) is sequentially provided with an electric heating wire and a corundum ceramic tube.
3. The device for measuring the dynamic resistance of the bismuth-silicon high-temperature melt according to claim 2, wherein a heat preservation system connected with an electric heating wire and a temperature control thermocouple is further arranged on the control box (14).
4. The device for measuring the dynamic resistance of the bismuth silicon high-temperature melt according to claim 2, wherein the heat-insulating material is heat-insulating asbestos, and the electric heating wire is a nickel-chromium electric heating wire; an ammeter (11) and a voltmeter (7) for displaying the current and the voltage of the electric heating wire are also arranged on the control box (14).
5. The device for measuring the dynamic resistance of the bismuth-silicon high-temperature melt according to claim 1, wherein the high-temperature resistant test container is a high-purity alumina test container, and the temperature-controlled thermocouple is positioned right above the high-purity alumina test container.
6. The device for measuring the dynamic resistance of the bismuth-silicon high-temperature melt according to claim 2, wherein the electric heating furnace (2) is arranged at the upper end of the control box (14), small wheels (5) used for moving the electric heating furnace (2) are arranged on the electric heating furnace (2), and a track (6) matched with the small wheels (5) is arranged on the control box (14).
7. The device for measuring the dynamic resistance of the bismuth-silicon high-temperature melt according to claim 1, wherein the temperature control thermocouple is a nickel-chromium-nickel-silicon thermocouple.
8. The device for measuring the dynamic resistance of the bismuth-silicon high-temperature melt according to claim 1, wherein a universal meter (9) is selected as the resistance measuring device, and the measuring range of the universal meter (9) is 0-20 megaohms.
CN202020021210.XU 2020-01-07 2020-01-07 Measuring device for dynamic resistance of bismuth-silicon high-temperature melt Expired - Fee Related CN211453448U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112378947A (en) * 2020-11-11 2021-02-19 武汉理工大学 Method for rapidly detecting melting property of glass batch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112378947A (en) * 2020-11-11 2021-02-19 武汉理工大学 Method for rapidly detecting melting property of glass batch

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