CN211348347U - Laminated busbar connecting device for testing semiconductor device - Google Patents
Laminated busbar connecting device for testing semiconductor device Download PDFInfo
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- CN211348347U CN211348347U CN201922024992.2U CN201922024992U CN211348347U CN 211348347 U CN211348347 U CN 211348347U CN 201922024992 U CN201922024992 U CN 201922024992U CN 211348347 U CN211348347 U CN 211348347U
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- stromatolite
- laminated busbar
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Abstract
The utility model discloses a female connecting device that arranges of stromatolite that semiconductor device test was used, female arranging, support electric capacity, current-limiting IGBT, the female row of second stromatolite, sensor including power input end, first stromatolite, the fixed support electric capacity that is provided with of the female rear side bolt of arranging of first stromatolite, the female bottom of arranging of first stromatolite is provided with the current-limiting IGBT, the lower extreme of current-limiting IGBT still is provided with the female row of second stromatolite, the female right side of arranging of second stromatolite is provided with the sensor. The laminated busbar connecting device comprises two independent laminated busbars, a supporting capacitor is arranged on the first laminated busbar, a sensor is arranged at the connecting position of the first laminated busbar and the second laminated busbar, and the second laminated busbar is used as an output terminal to form three power layers, so that a loop between a positive circuit and a negative circuit is reduced to the maximum extent, and stray inductance is effectively reduced.
Description
Technical Field
The utility model relates to a power electronic device tests technical field, more specifically relates to female connecting device that arranges of stromatolite that semiconductor device test was used.
Background
The rapid development of the industry makes the direct current transmission technology improved and the power electronic technology further developed, and makes the characteristic research of the power electronic device more and more important. The semiconductor industry is the most important one, and the research on semiconductor products is continuously carried out, so that the performance of the semiconductor products is further improved. In the process of researching and analyzing semiconductors, higher requirements are put on the tests of the semiconductors in order to ensure that the functions of the semiconductors in the application process can be fully exerted. In the process of testing the semiconductor, a reasonable clamping mode and a reasonable movement mode of processes before and after the test of the device are adopted, so that an efficient mode is achieved.
Taking an IGBT as an example, the characteristic research of the IGBT includes static characteristic research and dynamic characteristic research, the static characteristic is often obtained from datasheets (data sheets), the dynamic characteristic needs to be obtained through manual measurement, and the accuracy of the measurement is very important.
In the characteristic research of the IGBT, the IGBT (tested part) needs to be placed in a test box body for dynamic and static test, the IGBT is often connected with a test fixture, then the test fixture is connected with a laminated busbar device in the test box body to realize connection with a test circuit, and the performance characteristic of the IGBT can be tested; the existing laminated busbar has high stray inductance, and the test result of the IGBT performance can be influenced.
SUMMERY OF THE UTILITY MODEL
The technical problem to be solved by the utility model is to provide a laminated busbar connecting device for testing a semiconductor device, so as to solve the problem of high stray inductance of the existing laminated busbar;
the utility model provides a female connecting device that arranges of stromatolite that semiconductor device test was used, includes that power input end, first stromatolite arrange, support electric capacity, current-limiting IGBT, second stromatolite are female arranges, the sensor, the fixed support electric capacity that is provided with of the rear side bolt that first stromatolite was female arranges, the female bottom of arranging of first stromatolite is provided with the current-limiting IGBT, the lower extreme of current-limiting IGBT still is provided with female the arranging of second stromatolite, the female right side of arranging of second stromatolite is provided with the sensor.
The laminated busbar connecting device comprises two independent laminated busbars, a supporting capacitor is arranged on the first laminated busbar, a sensor is arranged at the connecting position of the first laminated busbar and the second laminated busbar, and the second laminated busbar is used as an output terminal to form three power layers, so that a loop between a positive circuit and a negative circuit is reduced to the maximum extent, and stray inductance is effectively reduced.
As a further aspect of the present invention: the sensor is a current sensor.
As a further aspect of the present invention: the sensor model is HCS-LTS06A LTS06NPTBC06DS 5.
As a further aspect of the present invention: a bus positive electrode layer, an inductance layer and a bus negative electrode layer are sequentially arranged on the left side of the lower end of the second laminated busbar from top to bottom; the bus positive electrode layer, the inductance layer and the bus negative electrode layer are connected with the test fixture.
Compared with the prior art, the beneficial effects of the utility model are that:
1. the utility model discloses in, female connecting device that arranges of stromatolite includes that two independent stromatolites are female arranges, arranges at first stromatolite and installs support capacitance on female arranging, arranges the junction installation sensor who arranges with the second stromatolite at first stromatolite to utilize female arranging of second stromatolite as output terminal, constitute three power layer, the at utmost has reduced the return circuit between positive, negative polarity circuit, effectively reduces stray inductance.
2. In the utility model, the left side of the lower end of the second laminated busbar is provided with a bus positive electrode layer, an inductance layer and a bus negative electrode layer from top to bottom in sequence; the bus positive electrode layer, the inductance layer and the bus negative electrode layer are connected with the test fixture, the connection mode is simple, and the disassembly is convenient.
Drawings
In order to illustrate the technical solutions in the embodiments of the present invention more clearly, the drawings that are needed in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention.
Fig. 1 is a side view of the laminated busbar connection device provided by the present invention.
Fig. 2 is a front view of the laminated busbar connection device provided by the present invention.
In the figure: 20-power input end, 21-first laminated busbar, 22-support capacitor, 23-current-limiting IGBT, 24-second laminated busbar, 25-sensor, 26-bus positive electrode layer, 27-inductance layer and 28-bus negative electrode layer.
Detailed Description
In order to make the technical problem, technical solution and advantageous effects to be solved by the present invention more clearly understood, the following description is given in conjunction with the accompanying drawings and embodiments to illustrate the present invention in further detail. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1-2, fig. 1 is a side view of a laminated busbar connection device; fig. 2 is a front view of the laminated busbar connection device; the laminated busbar connecting device comprises a power input end 20, a first laminated busbar 21, a supporting capacitor 22, a current limiting IGBT23, a second laminated busbar 24 and a sensor 25, wherein,
a supporting capacitor 22 is fixedly arranged on a rear bolt of the first laminated busbar 21, a current-limiting IGBT23 is arranged on a bottom bolt of the first laminated busbar 21, a second laminated busbar 24 is further arranged at the lower end of the current-limiting IGBT23, a sensor 25 is arranged on the right side of the second laminated busbar 24, and the left side of the lower end of the second laminated busbar 24 sequentially comprises a busbar positive electrode layer 26, an inductance layer 27 and a busbar negative electrode layer 28 from top to bottom; the bus positive electrode layer 26, the inductance layer 27 and the bus negative electrode layer 28 are used for being connected with a test fixture, and the connection mode is simple and convenient to detach.
Further, in the present embodiment, the sensor 25 is a current sensor, and can detect the magnitude of the current at any time.
Furthermore, in the embodiment, the sensor 25 is of a HCS-LTS06A LTS06NP TBC06DS5 type, and the detection precision is high.
The laminated busbar connecting device comprises two independent laminated busbars, a supporting capacitor is arranged on the first laminated busbar, a sensor is arranged at the joint of the first laminated busbar and the second laminated busbar, and the second laminated busbar is used as an output terminal to form three power layers, so that a loop between a positive line and a negative line is reduced to the maximum extent, and stray inductance is effectively reduced.
The working principle is as follows: the laminated busbar connecting device comprises two independent laminated busbars, a supporting capacitor is arranged on the first laminated busbar, a sensor is arranged at the connecting position of the first laminated busbar and the second laminated busbar, and the second laminated busbar is used as an output terminal to form three power layers, so that a loop between a positive circuit and a negative circuit is reduced to the maximum extent, and stray inductance is effectively reduced.
In the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (5)
1. The utility model provides a female connecting device that arranges of stromatolite that semiconductor device test was used which characterized in that, arranges (21), support electric capacity (22), current-limiting IGBT (23), female (24), sensor (25) of second stromatolite including power input end (20), first stromatolite, the rear side of arranging (21) of first stromatolite is fixed to be provided with and to support electric capacity (22), the bottom of arranging (21) of first stromatolite is provided with current-limiting IGBT (23), the lower extreme of current-limiting IGBT (23) still is provided with female (24) of second stromatolite, the right side of arranging (24) of second stromatolite is provided with sensor (25).
2. The laminated busbar connection device for testing a semiconductor device according to claim 1, wherein the sensor (25) is a current sensor.
3. The laminated busbar connection device for testing a semiconductor device as claimed in claim 1, wherein the sensor (25) is of the type HCS-LTS06A LTS06NP TBC06DS 5.
4. The laminated busbar connection device for testing the semiconductor device according to any one of claims 1 to 3, wherein a bus bar positive electrode layer (26), an inductance layer (27) and a bus bar negative electrode layer (28) are arranged on the left side of the lower end of the second laminated busbar (24).
5. The laminated busbar connection device for testing the semiconductor device according to any one of claims 1 to 3, wherein a busbar positive electrode layer (26), an inductance layer (27) and a busbar negative electrode layer (28) are sequentially arranged on the left side of the lower end of the second laminated busbar (24) from top to bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922024992.2U CN211348347U (en) | 2019-11-21 | 2019-11-21 | Laminated busbar connecting device for testing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922024992.2U CN211348347U (en) | 2019-11-21 | 2019-11-21 | Laminated busbar connecting device for testing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211348347U true CN211348347U (en) | 2020-08-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922024992.2U Active CN211348347U (en) | 2019-11-21 | 2019-11-21 | Laminated busbar connecting device for testing semiconductor device |
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| Country | Link |
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| CN (1) | CN211348347U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114966160A (en) * | 2022-07-29 | 2022-08-30 | 浙江大学 | Laminated busbar and power device current detection device based on tunnel magnetoresistance |
-
2019
- 2019-11-21 CN CN201922024992.2U patent/CN211348347U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114966160A (en) * | 2022-07-29 | 2022-08-30 | 浙江大学 | Laminated busbar and power device current detection device based on tunnel magnetoresistance |
| CN114966160B (en) * | 2022-07-29 | 2022-10-25 | 浙江大学 | Laminated busbar and power device current detection device based on tunnel magnetoresistance |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 230088 No.8 DALONGSHAN Road, hi tech Zone, Hefei City, Anhui Province Patentee after: Hefei Kewei Power System Co.,Ltd. Address before: 230088 Building 2, Hupu Industrial Park, No. 4715, Wangjiang West Road, hi tech Zone, Hefei City, Anhui Province Patentee before: Hefei Kewei Power System Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 230088 No.8 DALONGSHAN Road, hi tech Zone, Hefei City, Anhui Province Patentee after: Cowell Technology Co.,Ltd. Address before: 230088 No.8 DALONGSHAN Road, hi tech Zone, Hefei City, Anhui Province Patentee before: Hefei Kewei Power System Co.,Ltd. |