CN211321236U - Novel circuit of ultra-high power pulse corona discharge plasma power supply - Google Patents
Novel circuit of ultra-high power pulse corona discharge plasma power supply Download PDFInfo
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- CN211321236U CN211321236U CN201921657608.6U CN201921657608U CN211321236U CN 211321236 U CN211321236 U CN 211321236U CN 201921657608 U CN201921657608 U CN 201921657608U CN 211321236 U CN211321236 U CN 211321236U
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Abstract
The utility model discloses a novel circuit of super large power pulse corona discharge plasma power, include: the device comprises a diode rectifier, a high-frequency charging loop and a nanosecond pulse generation circuit, wherein the diode rectifier is used for generating stable direct current supply voltage. The utility model discloses compare with traditional plasma power, direct current busbar voltage improves 4 times, under same load condition, IGBT switch resonance circuit's pulse width descends to original 1/4, under the unchangeable prerequisite of return circuit equivalent inductance, the maximum load capacity of plasma power promotes to original 16 times, compare with IGBT switch direct series scheme, the maximum voltage clamper of every IGBT is in 1/4 generating line department, need not to consider the dynamic voltage-sharing problem between the semiconductor switch, this kind of equivalent series scheme, not only greatly reduced the circuit design degree of difficulty, the design reliability of power scheme has still been improved, establish ties through the modularization, system busbar voltage equivalence has improved original 4 times.
Description
Technical Field
The utility model relates to a pulse corona discharge technical field especially relates to a novel circuit of super large power pulse corona discharge plasma power.
Background
The pulse corona discharge technology is firstly applied to desulfurization and denitration of flue gas of a coal-fired power plant, high-voltage narrow pulses are used for discharging in gas, a large number of high-energy electrons (5-20eV) are generated in the process of propagation of streamer, and the high-energy electrons are enough to open chemical bonds of a plurality of background gas molecules.
The traditional pulse corona plasma power supply adopts an IGBT parallel connection scheme, and the fatal defects are as follows: the direct-current bus voltage is low, the transformation ratio of the pulse transformer is high, therefore, the equivalent capacitance value converted from the sharpening capacitor C1 to the low-voltage side of the pulse transformer is high, and the pulse resonance period is long; the IGBT has poor pulse current tolerance capability, is easy to enter a desaturation region to be damaged, and limits the maximum output power of the pulse power supply.
SUMMERY OF THE UTILITY MODEL
The utility model aims at solving the defects existing in the prior art, and providing a novel circuit of an ultra-high power pulse corona discharge plasma power supply.
In order to achieve the above purpose, the utility model adopts the following technical scheme: a novel circuit of an ultra-high power pulse corona discharge plasma power supply comprises: the device comprises a diode rectifier, a high-frequency charging circuit, a nanosecond pulse generation circuit and a reverse bias power supply energy recovery circuit;
the diode rectifier is used for generating stable direct current supply voltage;
the high-frequency charging circuit is also connected with an energy storage capacitor Cc1, an energy storage capacitor Cc2, an energy storage capacitor Cc3 and an energy storage capacitor Cc4 in series, and is used for charging the energy storage capacitor Cc1, the energy storage capacitor Cc2, the energy storage capacitor Cc3 and the energy storage capacitor Cc 4;
the nanosecond pulse generation circuit is used for compressing pulse width, and is further connected with a discharge switch S1, a discharge switch S2, a discharge switch S3 and a discharge switch S4 in a modularized series mode, wherein the high-frequency charging power supply works in a constant-pulse-width variable-frequency control mode, different charging voltages can be realized by adjusting the inversion frequency of the low-voltage discharge switch S1, the discharge switch S2, the discharge switch S3 and the discharge switch S4, and the charging voltages determine the discharge voltage of the whole power supply to a load;
the reverse bias power supply energy recovery circuit is composed of a direct current power supply E and a large capacitor Ce connected in parallel to the direct current power supply E, and the reverse bias power supply energy recovery circuit is connected in the nanosecond pulse generation circuit in series.
As a further description of the above technical solution:
the discharge switch S1, the discharge switch S2, the discharge switch S3 and the discharge switch S4 all adopt a crimping type IGBT device with 4500V/3000A level.
As a further description of the above technical solution:
the nanosecond pulse generation circuit further comprises a freewheeling diode D1, a freewheeling diode D2, a freewheeling diode D3 and a freewheeling diode D4;
the freewheeling diode D1, the freewheeling diode D2, the freewheeling diode D3 and the freewheeling diode D4 are respectively connected in a modular circuit of the discharge switch S1, the discharge switch S2, the discharge switch S3 and the discharge switch S4, and the freewheeling diode D1, the freewheeling diode D2, the freewheeling diode D3 and the freewheeling diode D4 are diode devices with crimping lines, so that the cooling and heat dissipation of the high-voltage component are greatly facilitated.
As a further description of the above technical solution:
the freewheeling diode D1, the freewheeling diode D2, the freewheeling diode D3 and the freewheeling diode D4 are connected in a modular circuit of the discharging switch S1, the discharging switch S2, the discharging switch S3 and the discharging switch S4, even if the discharging switch S1, the discharging switch S2, the discharging switch S3 and the discharging switch S4 cannot be triggered to be conducted simultaneously, the discharging switch S1, the discharging switch S2, the discharging switch S3 and the discharging switch S4 cannot be in overvoltage, pulse current can flow through corresponding anti-parallel diodes, and therefore the discharging switch crimping type IGBT device is bypassed.
As a further description of the above technical solution:
discharge switch S1, discharge switch S2, discharge switch S3 and discharge switch S4 four crimping type IGBT devices pile up in proper order, and four be equipped with water-cooling radiator, four between the crimping type IGBT device the top and the bottom of crimping type IGBT device all still are equipped with water-cooling radiator, wherein, through insulating pull rod pressure equipment between a plurality of water-cooling radiator and the crimping type IGBT device, still be connected with water inlet and delivery port on the water-cooling radiator.
As a further description of the above technical solution:
the high-frequency charging circuit further comprises a capacitor Cm1, a capacitor Cm2, a capacitor Cm3 and a capacitor Cm 4;
the capacitor Cm1, the capacitor Cm2, the capacitor Cm3 and the capacitor Cm4 are respectively connected in four modular circuits in the modular circuit of the discharge switch S1, the discharge switch S2, the discharge switch S3 and the discharge switch S4.
As a further description of the above technical solution:
the maximum voltages borne by the discharging switch S1, the discharging switch S2, the discharging switch S3 and the discharging switch S4 are the voltages of the capacitor Cm1, the capacitor Cm2, the capacitor Cm3 and the capacitor Cm4, so that the voltages of the discharging switch S1, the discharging switch S2, the discharging switch S3 and the discharging switch S4 can be controlled through voltage balance control of the capacitor Cm1, the capacitor Cm2, the capacitor Cm3 and the capacitor Cm 4.
As a further description of the above technical solution:
the oil tank, the oil pipe, the pumping cooler and the cooling radiator are also included;
the oil tank is communicated with the pumping cooler through an oil pipe, the pumping cooler is communicated with the cold area treatment bin through an oil pipe, the cooling radiator is communicated with the oil tank through an oil pipe, and the oil tank and the cooling radiator are connected through an oil pipe to form a circulating cooling treatment loop.
As a further description of the above technical solution:
a magnetic switch and a pulse transformer are arranged in the oil tank;
the cooling radiators are provided with two groups, one group of cooling radiators is internally provided with a discharge switch S1, a discharge switch S2, a discharge switch S3 and a discharge switch S4, and the other group of cooling radiators is internally provided with a freewheeling diode D1, a freewheeling diode D2, a freewheeling diode D3 and a freewheeling diode D4.
Advantageous effects
The utility model provides a novel circuit of super large power pulse corona discharge plasma power. The method has the following beneficial effects:
(1): the utility model discloses compare with traditional plasma power, direct current busbar voltage improves 4 times, under same load condition, IGBT switch resonance circuit's pulse width descends to original 1/4, under the unchangeable prerequisite of return circuit equivalent inductance, the maximum load capacity of plasma power promotes to original 16 times, compare with IGBT switch direct series scheme, the maximum voltage clamper of every IGBT is in 1/4 generating line department, need not to consider the dynamic voltage-sharing problem between the semiconductor switch, this kind of equivalent series scheme, not only greatly reduced the circuit design degree of difficulty, and the design reliability of power scheme has still been improved, establish ties through the modularization, system busbar voltage equivalence has improved original 4 times, can reach the application effect of establishing ties completely unanimously with IGBT device discharge switch.
(2): the utility model selects the crimping type IGBT device and the crimping line diode device, the packaging device is very suitable for screw press mounting, the loop inductance can be reduced to the utmost extent, in addition, the water path flow equalizing design becomes easier due to the adoption of the press mounting scheme, thereby the best cooling effect is achieved, the heat productivity of the pulse transformer and the magnetic switch is considered to be very large, and the oil is pumped from the inside of the oil tank through the oil cooler, so that the refrigeration is realized; then, cooling oil is injected into the semiconductor device to rapidly cool the upper surface and the lower surface of the semiconductor device, and simultaneously, the semiconductor switch and the magnetic element are cooled, and the volume of the plasma power supply is not limited by heat productivity any more by the cooling mode, so that the power density of the power supply can be greatly improved.
Drawings
Fig. 1 is an overall circuit schematic diagram of a novel circuit of the ultra-high power pulse corona discharge plasma power supply provided by the present invention;
fig. 2 is a schematic circuit diagram of a diode rectifier according to the present invention;
fig. 3 is a schematic diagram of a medium-high frequency charging circuit according to the present invention;
FIG. 4 is a schematic diagram of the middle nanosecond pulse generation circuit of the present invention
FIG. 5 is a schematic diagram of a reverse bias power supply energy recovery circuit of the present invention;
FIG. 6 is a schematic structural diagram of a wire crimping device TGBT in accordance with the present invention;
FIG. 7 is a schematic view of an integrated cooling structure of the plasma power supply according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.
Referring to fig. 1-7, a novel circuit for a very high power pulsed corona discharge plasma power supply, comprises: the device comprises a diode rectifier, a high-frequency charging loop and a nanosecond pulse generation circuit;
the diode rectifier is used for generating stable direct current supply voltage;
the high-frequency charging circuit is also connected with an energy storage capacitor Cc1, an energy storage capacitor Cc2, an energy storage capacitor Cc3 and an energy storage capacitor Cc4 in series, and is used for charging the energy storage capacitor Cc1, the energy storage capacitor Cc2, the energy storage capacitor Cc3 and the energy storage capacitor Cc 4;
the nanosecond pulse generating circuit is used for compressing pulse width, and is connected with a discharging switch S1, a discharging switch S2, a discharging switch S3 and a discharging switch S4 in a modularized series mode, wherein the high-frequency charging power supply works in a constant-pulse-width variable-frequency control mode, different charging voltages can be realized by adjusting the inversion frequency of the low-voltage discharging switch S1, the discharging switch S2, the discharging switch S3 and the discharging switch S4, and the charging voltages determine the discharging voltages of the whole power supply to loads;
the reverse bias power supply energy recovery circuit consists of a direct current power supply E and a large capacitor Ce connected in parallel to the direct current power supply E, and is connected in the nanosecond pulse generation circuit in series.
The discharge switch S1, the discharge switch S2, the discharge switch S3 and the discharge switch S4 all adopt a 4500V/3000A class crimping type IGBT device.
The nanosecond pulse generation circuit further comprises a freewheeling diode D1, a freewheeling diode D2, a freewheeling diode D3 and a freewheeling diode D4;
the freewheeling diode D1, the freewheeling diode D2, the freewheeling diode D3 and the freewheeling diode D4 are respectively connected in a modular circuit of the discharge switch S1, the discharge switch S2, the discharge switch S3 and the discharge switch S4, and the freewheeling diode D1, the freewheeling diode D2, the freewheeling diode D3 and the freewheeling diode D4 are diode devices with crimping lines, so that the cooling and heat dissipation of the high-voltage component are greatly facilitated.
The freewheeling diode D1, the freewheeling diode D2, the freewheeling diode D3 and the freewheeling diode D4 are connected in a modular circuit of the discharging switch S1, the discharging switch S2, the discharging switch S3 and the discharging switch S4, even if the discharging switch S1, the discharging switch S2, the discharging switch S3 and the discharging switch S4 cannot be triggered to be conducted simultaneously, the discharging switch S1, the discharging switch S2, the discharging switch S3 and the discharging switch S4 cannot be in overvoltage, pulse current can flow through corresponding anti-parallel diodes, and therefore the discharging switch crimping type IGBT device is bypassed.
Without the freewheeling diode D1, freewheeling diode D2, freewheeling diode D3 and freewheeling diode D4, if the discharge switch S1, discharge switch S2, discharge switch S3 and discharge switch S4 cannot be triggered to conduct simultaneously, the last conducting discharge switch needs to withstand a maximum of 3 times the rated operating voltage, which inevitably results in overvoltage damage to the switching devices.
The discharge switch S1, the discharge switch S2, the discharge switch S3 and the discharge switch S4 are stacked in sequence, water-cooled radiators are arranged among the four crimping type IGBT devices, the top and the bottom of each crimping type IGBT device are provided with the water-cooled radiators, the plurality of water-cooled radiators and the crimping type IGBT devices are pressed through insulating pull rods, and the water-cooled radiators are further connected with a water inlet and a water outlet.
The high-frequency charging circuit also comprises a capacitor Cm1, a capacitor Cm2, a capacitor Cm3 and a capacitor Cm 4;
the capacitor Cm1, the capacitor Cm2, the capacitor Cm3 and the capacitor Cm4 are respectively connected in four modular circuits of the modular circuit of the discharge switch S1, the discharge switch S2, the discharge switch S3 and the discharge switch S4.
The maximum voltages borne by the discharging switch S1, the discharging switch S2, the discharging switch S3 and the discharging switch S4 are the voltages of the capacitor Cm1, the capacitor Cm2, the capacitor Cm3 and the capacitor Cm4, so that the voltages of the discharging switch S1, the discharging switch S2, the discharging switch S3 and the discharging switch S4 can be controlled through voltage balance control of the capacitor Cm1, the capacitor Cm2, the capacitor Cm3 and the capacitor Cm 4. In a high-frequency charging mode, voltage balance control of the capacitor Cm1, the capacitor Cm2, the capacitor Cm3 and the capacitor Cm4 is easy to realize, and through a modular series connection technology, the input voltage at two ends of the pulse transformer TR is 4 times that of a discharge switch of a single-crimping IGBT device. On the premise that the bus voltage is equivalently increased by 4 times, the power of the pulse power supply can be increased to 4 times.
The oil tank, the oil pipe, the pumping cooler and the cooling radiator are also included;
the oil tank is communicated with the pumping cooler through an oil pipe, the pumping cooler is communicated with the cold area treatment bin through an oil pipe, the cooling radiator is further communicated with the oil tank through an oil pipe, and the oil tank and the cooling radiator are connected through an oil pipe to form a circulating cooling treatment loop.
A magnetic switch and a pulse transformer are arranged in the oil tank;
the cooling radiators are provided with two groups, one group of the cooling radiators is internally provided with a discharge switch S1, a discharge switch S2, a discharge switch S3 and a discharge switch S4, and the other group of the cooling radiators is internally provided with a freewheeling diode D1, a freewheeling diode D2, a freewheeling diode D3 and a freewheeling diode D4.
The energy conversion efficiency of the plasma power supply is low, and generally does not exceed 75%. Except for the power consumed by the discharge resistor Rp, the power is mostly converted into the heating power of a discharge switch, a pulse transformer and a magnetic switch of a crimping type IGBT device, an integrated cooling mode of an external oil cooler is adopted, firstly, the oil cooler pumps oil from the inside of an oil tank to realize refrigeration, and then, cooling oil is injected into a semiconductor device to rapidly cool the upper surface and the lower surface of the semiconductor device; and finally, the cooling oil flowing out of the semiconductor device flows back into the oil tank again to cool the semiconductor switch and the magnetic element, so that the volume of the plasma power supply is not limited by the heat productivity any more, and the power density of the power supply can be greatly improved.
The direct current power supply E in the reverse bias power supply energy recovery circuit is used for realizing the reverse reset of magnetic switches Lm1, Lm2 and Lm3 and a pulse transformer TR in a nanosecond pulse generation circuit, avoiding the direct current saturation of a magnetic core, and also used for realizing the automatic recovery of energy.
In the description herein, references to the description of "one embodiment," "an example," "a specific example," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.
Claims (9)
1. A novel circuit of an ultra-high power pulse corona discharge plasma power supply is characterized by comprising: the device comprises a diode rectifier, a high-frequency charging circuit, a nanosecond pulse generation circuit and a reverse bias power supply energy recovery circuit;
the high-frequency charging circuit is also connected with an energy storage capacitor Cc1, an energy storage capacitor Cc2, an energy storage capacitor Cc3 and an energy storage capacitor Cc4 in series;
the nanosecond pulse generation circuit is also connected with a discharge switch S1, a discharge switch S2, a discharge switch S3 and a discharge switch S4 in series in a modularized manner;
the reverse bias power supply energy recovery circuit is composed of a direct current power supply E and a large capacitor Ce connected in parallel to the direct current power supply E, and the reverse bias power supply energy recovery circuit is connected in the nanosecond pulse generation circuit in series.
2. The novel circuit of ultra-high power pulsed corona discharge plasma power supply of claim 1, wherein said discharge switch S1, S2, S3 and S4 are all crimp type IGBT devices of 4500V/3000A class.
3. The novel circuit of ultra-high power pulsed corona discharge plasma power supply of claim 1, wherein said nanosecond pulse generating circuit further comprises a freewheeling diode D1, a freewheeling diode D2, a freewheeling diode D3 and a freewheeling diode D4;
the freewheeling diode D1, the freewheeling diode D2, the freewheeling diode D3 and the freewheeling diode D4 are respectively connected in a modular circuit of the discharging switch S1, the discharging switch S2, the discharging switch S3 and the discharging switch S4, and the freewheeling diode D1, the freewheeling diode D2, the freewheeling diode D3 and the freewheeling diode D4 are diode devices with press-connected lines.
4. The novel circuit of ultra-high power pulsed corona discharge plasma power supply of claim 3, wherein said freewheeling diode D1, freewheeling diode D2, freewheeling diode D3 and freewheeling diode D4 are connected in a modular circuit of discharge switch S1, discharge switch S2, discharge switch S3 and discharge switch S4.
5. The novel circuit of the ultra-high power pulse corona discharge plasma power supply according to claim 1, wherein four crimping type IGBT devices of the discharge switch S1, the discharge switch S2, the discharge switch S3 and the discharge switch S4 are stacked in sequence, a water cooling radiator is arranged between the four crimping type IGBT devices, the water cooling radiators are arranged at the top and the bottom of the four crimping type IGBT devices, a plurality of water cooling radiators and the crimping type IGBT devices are pressed through insulating pull rods, and a water inlet and a water outlet are connected to the water cooling radiator.
6. The novel circuit of claim 1, further comprising a capacitor Cm1, a capacitor Cm2, a capacitor Cm3 and a capacitor Cm4 in said high frequency charging loop;
the capacitor Cm1, the capacitor Cm2, the capacitor Cm3 and the capacitor Cm4 are respectively connected in four modular circuits in the modular circuit of the discharge switch S1, the discharge switch S2, the discharge switch S3 and the discharge switch S4.
7. The novel circuit of claim 1 wherein the maximum voltage experienced by the discharge switch S1, the discharge switch S2, the discharge switch S3 and the discharge switch S4 is the voltage of the capacitor Cm1, the capacitor Cm2, the capacitor Cm3 and the capacitor Cm 4.
8. The novel circuit of the ultra-high power pulse corona discharge plasma power supply according to claim 1, further comprising an oil tank, an oil pipe, a cooling machine and a cooling radiator;
the oil tank is communicated with the pumping cooler through an oil pipe, the pumping cooler is communicated with the cold area treatment bin through an oil pipe, the cooling radiator is communicated with the oil tank through an oil pipe, and the oil tank and the cooling radiator are connected through an oil pipe to form a circulating cooling treatment loop.
9. The novel circuit of ultra high power pulsed corona discharge plasma power supply of claim 8, wherein said oil tank contains magnetic switch and pulse transformer;
the cooling radiators are provided with two groups, one group of cooling radiators is internally provided with a discharge switch S1, a discharge switch S2, a discharge switch S3 and a discharge switch S4, and the other group of cooling radiators is internally provided with a freewheeling diode D1, a freewheeling diode D2, a freewheeling diode D3 and a freewheeling diode D4.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921657608.6U CN211321236U (en) | 2019-09-30 | 2019-09-30 | Novel circuit of ultra-high power pulse corona discharge plasma power supply |
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| CN201921657608.6U CN211321236U (en) | 2019-09-30 | 2019-09-30 | Novel circuit of ultra-high power pulse corona discharge plasma power supply |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110855176A (en) * | 2019-09-30 | 2020-02-28 | 浙江大维高新技术股份有限公司 | Novel circuit of ultra-high power pulse corona discharge plasma power supply |
| CN117792142A (en) * | 2024-02-28 | 2024-03-29 | 中国空气动力研究与发展中心高速空气动力研究所 | High-power high-frequency pulse plasma power supply and charging and discharging method thereof |
-
2019
- 2019-09-30 CN CN201921657608.6U patent/CN211321236U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110855176A (en) * | 2019-09-30 | 2020-02-28 | 浙江大维高新技术股份有限公司 | Novel circuit of ultra-high power pulse corona discharge plasma power supply |
| CN117792142A (en) * | 2024-02-28 | 2024-03-29 | 中国空气动力研究与发展中心高速空气动力研究所 | High-power high-frequency pulse plasma power supply and charging and discharging method thereof |
| CN117792142B (en) * | 2024-02-28 | 2024-05-14 | 中国空气动力研究与发展中心高速空气动力研究所 | High-power high-frequency pulse plasma power supply and charging and discharging method thereof |
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