CN103066834A - Staggered parallel high-gain boost type direct current (DC) converter - Google Patents

Staggered parallel high-gain boost type direct current (DC) converter Download PDF

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Publication number
CN103066834A
CN103066834A CN2012105344459A CN201210534445A CN103066834A CN 103066834 A CN103066834 A CN 103066834A CN 2012105344459 A CN2012105344459 A CN 2012105344459A CN 201210534445 A CN201210534445 A CN 201210534445A CN 103066834 A CN103066834 A CN 103066834A
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China
Prior art keywords
voltage doubling
inductance
power switch
converter
port
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Pending
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CN2012105344459A
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Chinese (zh)
Inventor
周雒维
邾玢鑫
罗全明
卢伟国
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Chongqing University
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Chongqing University
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Priority to CN2012105344459A priority Critical patent/CN103066834A/en
Publication of CN103066834A publication Critical patent/CN103066834A/en
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Abstract

The invention provides a staggered parallel high-gain boost type direct current (DC) converter which comprises two power switch tubes, an output diode and n voltage-multiplying units. Each voltage-multiplying unit is composed of a diode and a capacitor. The DC converter realizes high-gain output by utilization of the voltage-multiplying units. Once one voltage-multiplying unit is added in a circuit, one time base gain can be improved on the basis of gain of an original circuit, namely, the n voltage-multiplying units are added in the circuit, and the gain ratio of the circuit is (N+1) times of a basic boost converter. Compared with an existing high-gain boost type converter, the DC converter is simple in circuit topology, free of coupling inductance (small in electro-magnetic interference), and can greatly reduce voltage stress of switching elements, thus, overall working efficiency of the converter is improved.

Description

A kind of crisscross parallel high gain boost type DC converter
Technical field
The present invention relates to a kind of DC-DC converter, is a kind of crisscross parallel high gain boost type DC converter specifically.
 
Background technology
In the prior art, basic booster type (Boost) interleaved parallel converter, referring to accompanying drawing 1(take the two-phase crisscross parallel as example), it comprises two inductance, two power switch pipes, two output diodes.Wherein the input of first inductance connects the positive pole of input power with the input of second inductance, the anode of output termination first output diode, the negative electrode of first diode connects the positive pole of converter output terminal with the negative electrode of second diode; Connect the drain electrode of the first power switch between the anode of the first inductance and first diode, the first power switch source electrode connects the negative pole of converter; The anode of second output diode of output termination of second inductance connects the drain electrode of the second power switch between the anode of the second inductance and second diode, the second power switch source electrode connects the negative pole of converter.This basic boost interleaved parallel converter output voltage gain is less, and the voltage stress of power switch pipe and diode is output voltage, so loss is also larger.Be difficult to be competent in the poor larger occasion of some input and output voltages, be incorporated into the power networks X-ray machine power supply etc. such as photovoltaic cell.In recent years, some in succession occur and had the circuit topology of high-gain ability, mainly contained three kinds.The first adds the transformer of a high frequency by means of transformer in the middle of original DC-DC converter, realize the purpose of high gain boost by changing transformer voltage ratio.But this moment, in fact the conversion process of electric energy by original DC-to-DC, becomes DC-AC-AC-DC, and the energy conversion efficiency of whole system has reduced.The second is to utilize the method for switching capacity to realize high gain boost, but the required switching device of this kind scheme is too much, and control is complicated, and cost is also higher, thereby also is of little use.The third is to utilize coupling inductance to realize high gain boost, but the use of coupling inductance can cause that equally the switching device voltage stress is too high, and can bring the impacts such as electromagnetic interference, causes the converter working loss larger.
 
Summary of the invention
For the prior art above shortcomings, the present invention solves that existing converter exists that energy conversion efficiency reduces, switching device too much, the problem such as switching tube and diode electrically compression be large, a kind of crisscross parallel booster type DC-DC converter with high-gain ability is provided.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme: a kind of crisscross parallel high gain boost type DC converter, it is characterized in that, and comprise two inductance L 1, L 2, two power switch S 1, S 2, and n voltage doubling unit; Described voltage doubling unit is by a diode and three port units that electric capacity consists of, n in order staggered access of voltage doubling unit; N is natural number, and span is Its circuit connecting relation is:
The first inductance L 1With the second inductance L 2Input connect simultaneously the positive pole of input power, the first inductance L 1With the second inductance L 2Output meet respectively the first power switch S 1With the second power switch S 2Drain electrode, the first power switch S 1With the second inductance L 2Source grounding; The first power switch S 1With the second power switch S 2Grid connect respectively separately controller; Two power switch S 1, S 2The driving phase place between differ 180 o, namely adopt staggered control strategy;
The first inductance L 1Output also connect the 1st, 3 ..., a n-1 voltage doubling unit the 3rd port; In the first inductance L 1With the 1st, 3 ..., the 3rd port of a n-1 voltage doubling unit the node place link to each other with the drain electrode of the first power switch S1;
The second inductance L 2First port of first voltage doubling unit of output termination, second port of first voltage doubling unit connects first port of second voltage doubling unit, second port of second voltage doubling unit connects first port of the 3rd voltage doubling unit, by that analogy, until n voltage doubling unit, the 3rd port of all even number voltage doubling units is connected to the second inductance L 2Link node place with first port of first voltage doubling unit; This node while and the second power switch S 2Drain electrode link to each other;
The second interface of n voltage doubling unit and the 3rd interface are the output positive and negative electrode of converter.
Compared to existing technology, the present invention has following beneficial effect:
1, the present invention utilizes the voltage doubling unit of carrying to realize the high-gain output of converter, the basis gain that voltage doubling unit of every increase all can double on the gain basis of primary circuit in the circuit, if that is to say in circuit increases n voltage doubling unit, then the ratio of gains of this circuit is exactly (n+1) times of basic booster converter.Compare with existing high-gain boost converter, circuit topology of the present invention is simple, does not have coupling inductance (EMI is little), and can significantly reduce the voltage stress of switching device, and the converter whole work efficiency is improved like this.
2, this converter has the high gain boost ability, can finish DC-to-DC high gain boost task, such as the DC-to-DC high gain boost task of photovoltaic cell between the required dc bus of combining inverter.Each converter is different according to the application scenario, can design the voltage doubling unit that adopts varying number, and electric current and the output voltage of each road input are all controlled.
3, each converter is different according to the application scenario, can design the voltage doubling unit that adopts varying number, and electric current and the output voltage of each road input are all controlled.
 
Description of drawings
Fig. 1 is existing basic booster type (Boost) interleaved parallel converter circuit theory diagrams.
Fig. 2 is the circuit theory diagrams of crisscross parallel high gain boost type DC converter one embodiment of the present invention.
Fig. 3 is voltage doubling unit embodiment schematic diagram in the crisscross parallel high gain boost type DC converter of the present invention.
 
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
As shown in Figure 2, a kind of crisscross parallel booster type DC converter with high-gain ability is comprised of low pressure input power and DC/DC booster circuit; Described high-gain crisscross parallel type DC-DC converter comprises two inductance L 1, L 2, two power switch S 1, S 2, and 4 voltage doubling units (4 diodes and 4 electric capacity consist of);
The first inductance L 1The positive pole of input termination input power, the 3rd port of output termination first, the 3rd voltage doubling unit; In the first inductance L 1Node place and the first power switch S with the 3rd port of first, the 3rd voltage doubling unit 1Drain electrode link to each other the first power switch S 1Source electrode connects the ground of input power;
The second inductance L 2The positive pole of input termination input power, first port of first voltage doubling unit of output termination, second port of first voltage doubling unit connects first port of second voltage doubling unit, second port of second voltage doubling unit connects first port of the 3rd voltage doubling unit, second port of the 3rd voltage doubling unit connects first port of the 4th voltage doubling unit, second positive pole that port is output of the 4th voltage doubling unit, the 3rd port of second, the 4th voltage doubling unit is connected to the second inductance L 2With the link node place of first port of first voltage doubling unit, and this node is the negative pole of output simultaneously, and this node simultaneously and the second power switch S 2Drain electrode link to each other the second power switch S 2Source electrode connects the ground of input power; The second interface of n voltage doubling unit and the 3rd interface are the output positive and negative electrode of converter.
The power switch that the present invention uses is switching device, and the open and close of power switch are under control of the controller, and 4 times of above-mentioned high gain boost circuit are by 180 ° of phase phasic differences between the every phase of duty ratio of controller control two-phase power switch.Its each phase duty ratio size determines according to input/output relation.
According to the difference of power switch state, circuit can be divided into 3 kinds of operating states:
(1) controller power ratio control switch S 1Turn-off power switch S 2Conducting, this moment, low-tension supply was passed through inductance L 1, capacitor C 1With diode D 2To capacitor C 2Charging, low-tension supply is passed through inductance L simultaneously 1, capacitor C 3, and diode D 4To capacitor C 4And high voltage dc bus power supply; This moment power switch S 2Keep opening state, low-tension supply is by power switch S 2To inductance L 2Charging; Diode D 1With diode D 3All turn-off.
(2) controller power ratio control switch S 2Turn-off power switch S 1Conducting, this moment, low-tension supply was passed through inductance L 2, and diode D 1To capacitor C 1Charging, low-tension supply is passed through inductance L simultaneously 2, capacitor C 2With diode D 3To capacitor C 3Charging; This moment power switch S 1Keep opening state, low-tension supply is by power switch S 1To inductance L 1Charging; Diode D 2With diode D 4All turn-off.
(3) the equal conducting of power switch, this moment, low-tension supply was by power switch S 1With power switch S 2Respectively to inductance L 1And inductance L 2Charging; Diode D 1, diode D 2, diode D 3With diode D 4All turn-off.
Described crisscross parallel high gain boost type DC converter has 4 times the ratio of gains than basic crisscross parallel Boost voltage boosting dc converter, and 2 phase input currents of this converter have the ability of autobalance electric current when 2 power switch pipe duty ratios equate.This converter input connects power voltage supply module (photovoltaic cell, fuel cell etc.), the high voltage direct current that output voltage is controlled.
In the specific embodiment of the present invention, power switch is according to the difference of required DC bus-bar voltage in the system, and selects the switching device of different voltage stresss.Voltage stress that it should be noted that switching tube all only has 1/4th of high voltage dc bus.
In sum, this circuit topological structure is simple, and boost capability is strong, is fit to be applied to the poor larger occasion of some input and output voltages.
Embodiment has adopted the high-gain crisscross parallel booster converter with 4 voltage doubling units for operation principle sets forth simple, in the application of reality, can according to the number of practical situations choose reasonable voltage doubling unit, reach the purpose of optimization efficiency and cost.
Above-mentioned enforcement example of the present invention only is to be explanation example of the present invention, and is not to be restriction to embodiments of the present invention.For those of ordinary skill in the field, can also make on the basis of the above description other multi-form variation and changes.Here can't give all execution modes exhaustive.Everyly belong to the row that apparent variation that technical scheme of the present invention amplifies out or change still are in protection scope of the present invention.

Claims (1)

1. a crisscross parallel high gain boost type DC converter is characterized in that, comprises two inductance L 1, L 2, two power switch S 1, S 2, and n voltage doubling unit; Described voltage doubling unit is by a diode and three port units that electric capacity consists of, n in order staggered access of voltage doubling unit; N is natural number, and span is
Its circuit connecting relation is: the first inductance L 1With the second inductance L 2Input connect simultaneously the positive pole of input power, the first inductance L 1With the second inductance L 2Output meet respectively the first power switch S 1With the second power switch S 2Drain electrode, the first power switch S 1With the second inductance L 2Source grounding; The first power switch S 1With the second power switch S 2Grid connect respectively separately controller; Two power switch S 1, S 2The driving phase place between differ 180 o, namely adopt staggered control strategy;
The first inductance L 1Output also connect the 1st, 3 ..., a n-1 voltage doubling unit the 3rd port; In the first inductance L 1With the 1st, 3 ..., the 3rd port of a n-1 voltage doubling unit the node place link to each other with the drain electrode of the first power switch S1;
The second inductance L 2First port of first voltage doubling unit of output termination, second port of first voltage doubling unit connects first port of second voltage doubling unit, second port of second voltage doubling unit connects first port of the 3rd voltage doubling unit, by that analogy, until n voltage doubling unit, the 3rd port of all even number voltage doubling units is connected to the second inductance L 2Link node place with first port of first voltage doubling unit; This node while and the second power switch S 2Drain electrode link to each other;
The second interface of n voltage doubling unit and the 3rd interface are the output positive and negative electrode of converter.
CN2012105344459A 2012-12-12 2012-12-12 Staggered parallel high-gain boost type direct current (DC) converter Pending CN103066834A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104218798A (en) * 2014-09-18 2014-12-17 天津大学 High voltage gain bidirectional DC-DC (direct current-direct current) converter based on switching capacitors and coupling inductors
CN105119486A (en) * 2015-09-23 2015-12-02 三峡大学 Low voltage stress bidirectional DC/DC converter
CN106549577A (en) * 2016-12-08 2017-03-29 北京理工大学 The two-way high-gain DC/DC changer of non-isolated and method for controlling frequency conversion
CN106549573A (en) * 2016-11-21 2017-03-29 天津大学 The high voltage boosting dc converter of belt switch inductance

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1845432A (en) * 2005-04-08 2006-10-11 中国科学院声学研究所 EP DC-DC boost pressure biasing circuit for sensor
CN201656768U (en) * 2009-12-14 2010-11-24 浙江大学 Coupled inductor realizing high-gain double voltage boost converter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1845432A (en) * 2005-04-08 2006-10-11 中国科学院声学研究所 EP DC-DC boost pressure biasing circuit for sensor
CN201656768U (en) * 2009-12-14 2010-11-24 浙江大学 Coupled inductor realizing high-gain double voltage boost converter

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
罗全明 等: "基于拓扑组合的高增益BOOST变换器", 《电工技术学报》 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104218798A (en) * 2014-09-18 2014-12-17 天津大学 High voltage gain bidirectional DC-DC (direct current-direct current) converter based on switching capacitors and coupling inductors
CN105119486A (en) * 2015-09-23 2015-12-02 三峡大学 Low voltage stress bidirectional DC/DC converter
CN106549573A (en) * 2016-11-21 2017-03-29 天津大学 The high voltage boosting dc converter of belt switch inductance
CN106549573B (en) * 2016-11-21 2019-03-26 天津大学 The high voltage boosting dc converter of belt switch inductance
CN106549577A (en) * 2016-12-08 2017-03-29 北京理工大学 The two-way high-gain DC/DC changer of non-isolated and method for controlling frequency conversion

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Application publication date: 20130424