CN211265475U - LED display light-emitting unit - Google Patents
LED display light-emitting unit Download PDFInfo
- Publication number
- CN211265475U CN211265475U CN202020188707.0U CN202020188707U CN211265475U CN 211265475 U CN211265475 U CN 211265475U CN 202020188707 U CN202020188707 U CN 202020188707U CN 211265475 U CN211265475 U CN 211265475U
- Authority
- CN
- China
- Prior art keywords
- electrode
- emitting diode
- layer
- light
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 abstract description 20
- 238000009434 installation Methods 0.000 abstract description 11
- 238000004020 luminiscence type Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 187
- 229920000642 polymer Polymers 0.000 description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 27
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 27
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 27
- 239000011575 calcium Substances 0.000 description 18
- 239000011651 chromium Substances 0.000 description 18
- 239000010949 copper Substances 0.000 description 18
- 239000010931 gold Substances 0.000 description 18
- 239000011777 magnesium Substances 0.000 description 18
- 239000010936 titanium Substances 0.000 description 18
- 229920000139 polyethylene terephthalate Polymers 0.000 description 16
- 239000005020 polyethylene terephthalate Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 9
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 229910052779 Neodymium Inorganic materials 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052791 calcium Inorganic materials 0.000 description 9
- 229910052804 chromium Inorganic materials 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 229910052741 iridium Inorganic materials 0.000 description 9
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 9
- 229910052744 lithium Inorganic materials 0.000 description 9
- 229910052749 magnesium Inorganic materials 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 229910052763 palladium Inorganic materials 0.000 description 9
- 229910052697 platinum Inorganic materials 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 8
- 239000004697 Polyetherimide Substances 0.000 description 8
- 239000004734 Polyphenylene sulfide Substances 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 239000011368 organic material Substances 0.000 description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 8
- 229920000058 polyacrylate Polymers 0.000 description 8
- 229920001601 polyetherimide Polymers 0.000 description 8
- -1 polyethylene terephthalate Polymers 0.000 description 8
- 239000004926 polymethyl methacrylate Substances 0.000 description 8
- 229920000069 polyphenylene sulfide Polymers 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- DQEFEBPAPFSJLV-UHFFFAOYSA-N Cellulose propionate Chemical compound CCC(=O)OCC1OC(OC(=O)CC)C(OC(=O)CC)C(OC(=O)CC)C1OC1C(OC(=O)CC)C(OC(=O)CC)C(OC(=O)CC)C(COC(=O)CC)O1 DQEFEBPAPFSJLV-UHFFFAOYSA-N 0.000 description 4
- 229920002284 Cellulose triacetate Polymers 0.000 description 4
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 4
- 150000001408 amides Chemical class 0.000 description 4
- 150000008378 aryl ethers Chemical class 0.000 description 4
- 229920006218 cellulose propionate Polymers 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 150000003949 imides Chemical class 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 229920001230 polyarylate Polymers 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 4
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 4
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Landscapes
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The utility model relates to a display screen technical field, concretely relates to LED display luminescence unit, it includes: a light emitting diode and a display backplane; the light emitting diode comprises a light emitting diode body and an electrode assembly arranged on the light emitting diode body; the display back plate comprises a substrate, a circuit layer and a planarization layer which are sequentially stacked; the planarization layer is provided with a mounting groove for accommodating the light-emitting diode body; a gap is formed between one side surface of the light-emitting diode body facing the display back plate and the bottom surface of the mounting groove; the light-emitting diode body comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked along a first direction, and the first direction is parallel to the upper surface of the planarization layer of the display back plate; the light emitting diode body is electrically connected with the circuit layer of the display back plate through the electrode assembly. The utility model discloses pressure when can effectively reduce emitting diode and show the backplate installation to avoid the thin film transistor on the pressure loss circuit layer.
Description
Technical Field
The utility model relates to a display screen technical field, concretely relates to LED display luminescence unit.
Background
The MICRO-LED display has the advantages of good stability, long service life and high operating temperature, simultaneously inherits the advantages of low power consumption, color saturation, high reaction speed, high contrast and the like of a Light Emitting Diode (LED), and has great application prospect.
The MICRO-LED display backplane comprises several pixel regions SPR, each comprising a red emitting diode, a blue emitting diode, a green emitting diode. In the manufacturing process of the display, three types of red, green and blue light emitting diodes (leds) need to be transferred from respective growth substrates (refer) to the display backplane, and then pressure is applied to the leds to mount the leds on the display backplane.
As shown in fig. 1, the conventional vertical type light emitting diode structure includes a light emitting diode body including a first semiconductor layer 201, a light emitting layer 202, and a second semiconductor layer 203, and electrodes are disposed on the first semiconductor layer 201 and the second semiconductor layer 203, respectively.
When the light emitting diode is installed, it is necessary to set an adhesive solder paste on the contact electrode on the surface of the display backplane, and then apply a downward pressure to the light emitting diode, so that the electrode of the light emitting diode and the contact electrode of the display backplane are bonded at a high temperature.
However, in the pressing process, the lower surface of the light emitting diode body and the planarization layer are also stressed, and the stressed surface is large, so that a Thin Film Transistor (TFT) on the circuit layer is damaged by pressure if the stress is too large, thereby causing adverse effects.
Disclosure of Invention
In order to overcome the above-mentioned defects, an object of the present invention is to provide a light emitting unit of an LED display, which can reduce the pressure when the light emitting diode and the display back plate are mounted, thereby avoiding the thin film transistor on the circuit layer from being damaged by pressure.
The purpose of the utility model is realized through the following technical scheme:
an LED display lighting unit comprising: a light emitting diode and a display backplane;
the light emitting diode comprises a light emitting diode body and an electrode assembly arranged on the light emitting diode body;
the display back plate comprises a substrate, a circuit layer and a planarization layer which are sequentially stacked;
the planarization layer is provided with a mounting groove for accommodating the light-emitting diode body;
a gap is formed between one side of the light-emitting diode body facing the display back plate and the bottom surface of the mounting groove;
the light-emitting diode body comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are arranged in a stacking mode along a first direction, and the first direction is parallel to the upper surface of the planarization layer of the display back plate; the electrode assembly comprises a first electrode and a second electrode, wherein the first electrode is arranged on one side surface of the first semiconductor layer, which faces away from the light-emitting layer; the second electrode is arranged on the surface of one side, away from the light-emitting layer, of the second semiconductor layer; a contact electrode assembly connected with the electrode assembly is arranged on the planarization layer, and the contact electrode assembly is communicated with the circuit layer; the contact electrode assembly comprises a first contact electrode and a second contact electrode, and the first contact electrode and the second contact electrode are respectively arranged on two sides of the opening of the mounting groove along the first direction;
the light emitting diode body is electrically connected with the circuit layer of the display back plate through an electrode assembly.
Preferably, the electrode assembly includes a first electrode and a second electrode, the first electrode being disposed on a surface of the first semiconductor layer on a side away from the light emitting layer; the second electrode is arranged on the surface of one side, away from the light-emitting layer, of the second semiconductor layer.
Preferably, a contact electrode assembly connected with the electrode assembly is arranged on the planarization layer, and the contact electrode assembly is communicated with the circuit layer; the contact electrode assembly comprises a first contact electrode and a second contact electrode, and the first contact electrode and the second contact electrode are respectively arranged on two sides of the opening of the mounting groove along the first direction.
Preferably, the distance between the first contact electrode and the second contact electrode is greater than or equal to the thickness of the light emitting diode body along the first direction.
Preferably, a through hole is formed in the planarization layer, conductive filling materials are filled in the through hole, the through hole is located on two sides of the mounting groove, the first contact electrode is connected with a power supply grounding wire of the circuit layer through the through hole, and the second contact electrode is connected with a thin film transistor in the circuit layer through the through hole.
Preferably, one side surface of the light emitting diode body facing the display back plate is a crystal contact surface; the surface of one side, facing the display back plate, of the first electrode is a first electrode contact surface; the surface of one side, facing the display back plate, of the second electrode is a second electrode contact surface; the distance between the first electrode contact surface and the crystal contact surface is a first distance; the distance between the second electrode contact surface and the crystal contact surface is a second distance; the first pitch is equal to the second pitch, and the first pitch is greater than 0.
Preferably, the depth of the mounting groove is greater than the first pitch.
Preferably, the length of the mounting groove is greater than or equal to the thickness of the light emitting diode body along the first direction.
Preferably, the width of the mounting groove is greater than or equal to the thickness of the light emitting diode body along the second direction, and the second direction is parallel to the upper surface of the planarization layer and perpendicular to the first direction.
Preferably, a metal reflecting layer is arranged at the bottom of the mounting groove, and a gap exists between one side surface of the light emitting diode body facing the display back plate and the metal reflecting layer.
The utility model discloses be provided with mounting groove on the planarization layer of display backplate for the holding emitting diode body, emitting diode only passes through electrode subassembly and is connected with the display backplate, and emitting diode body and display backplate contactless to the pressure when realizing reducing emitting diode and display backplate installation, and then avoid the pressure to damage TFT on the circuit layer; and the installation groove is arranged to provide a positioning reference for the installation of the light emitting diode, so that the installation of the light emitting diode is facilitated, and the installation efficiency and the display effect are improved.
Drawings
For the purpose of illustration, the invention is described in detail with reference to the following preferred embodiments and the accompanying drawings.
FIG. 1 is a schematic diagram of a conventional LED structure;
FIG. 2 is a schematic view of the structure principle of the installation state of the present invention;
fig. 3 is a schematic structural diagram of embodiment 1 of the present invention;
fig. 4 is a schematic structural diagram of embodiment 2 of the present invention;
fig. 5 is a schematic structural diagram of embodiment 3 of the present invention;
fig. 6 is a schematic structural diagram of embodiment 4 of the present invention;
fig. 7 is a schematic structural diagram of the first semiconductor layer of the present invention;
fig. 8 is a schematic view of the structural principle of the second semiconductor layer according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and to simplify the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present invention, it is to be understood that the terms "mounted," "connected," and "connected" are used unless otherwise specifically stated or limited "
It should be understood broadly that they may be, for example, fixedly attached, removably attached, or integrally attached. Either mechanically or electrically. Either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
Example 1:
as shown in fig. 2 and 3, an LED display light emitting unit includes: light emitting diodes and a display backplane 3;
the light emitting diode includes a light emitting diode body 2 and an electrode assembly disposed on the light emitting diode body 2;
the display back plate 3 includes a substrate 303, a circuit layer 302 and a planarization layer 301, which are sequentially stacked, wherein the substrate 303 may include a transparent glass material, such as: silicon dioxide (SiO 2), the substrate may also comprise a transparent plastic material such as: organic materials such as polyether sulfone (PES), Polyacrylate (PAR), polyether imide (PEI), polyethylene terephthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide, Polycarbonate (PC), cellulose Triacetate (TAC), or cellulose propionate (CAP); the circuit layer 302 includes a driving circuit for driving the light emitting diode; the planarization layer 301 covers the circuit layer 302, and can remove the step difference on the circuit layer 302 for planarization, and the planarization layer 301 includes organic materials, such as: polymethyl methacrylate (PMMA) or Polystyrene (PS), a polymer derivative having a phenol group, a propylene-based polymer, an imide-based polymer, an aryl ether-based polymer, an amide-based polymer, a fluorine-based polymer, a p-xylene-based polymer, a vinyl alcohol-based polymer, or any combination thereof.
The planarization layer 301 is provided with a mounting groove 7 for accommodating the led body 2, wherein the thickness L of the planarization layer 301 is greater than the depth H of the mounting groove 7, and a gap exists between a side surface of the led body 2 facing the display back plate 3 and the bottom surface of the mounting groove 7.
The light emitting diode body 2 includes a first semiconductor layer 201, a light emitting layer 202, and a second semiconductor layer 203 stacked in a first direction parallel to the upper surface of the planarization layer 301 of the display backplane 3, i.e., the light emitting diode body 2 is vertically mounted on the upper surface of the planarization layer 301 of the display backplane 3.
The led body 2 is electrically connected to the circuit layer 302 of the display back plate 3 through an electrode assembly.
The electrode assembly includes a first electrode 101 and a second electrode 102, the first electrode 101 being disposed on a surface of the first semiconductor layer 201 on a side facing away from the light-emitting layer 202; the second electrode 102 is arranged on the surface of the second semiconductor layer 203 on the side away from the light-emitting layer 202; the planarization layer 301 of the display back plate 3 is provided with a contact electrode assembly connected with the electrode assembly, the contact electrode assembly is communicated with the circuit layer, wherein the contact electrode assembly comprises a first contact electrode 103 and a second contact electrode 104, and the first contact electrode 103 and the second contact electrode 104 are respectively arranged at two sides of the opening of the mounting groove 7 along the first direction.
Here, the first semiconductor layer 201 may be an N/P type doped GaN layer, the light emitting layer 202 may be a quantum well layer, and the second semiconductor layer 203 may be a P/N type doped GaN layer. When an electric signal is applied to the first electrode 101 and the second electrode 102, electrons in the N-type semiconductor and holes in the P-type semiconductor are intensively collisionally recombined in the light emitting layer to generate photons, and energy is emitted in the form of photons. The first electrode 101 and the second electrode 102 are made of a conductive material such as metal, and may specifically include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (mo), titanium (Ti), tungsten (W), copper (Cu), or the like.
The distance between the first contact electrode 103 and the second contact electrode 104 is equal to the thickness of the light emitting diode body 2 along the first direction, i.e. the first electrode 101 is in full-area contact with the first contact electrode 103, and the second electrode 102 is in full-area contact with the second contact electrode 104.
A through hole 4 is formed in the planarization layer 301, conductive filling materials are filled in the through hole 4, the through hole 4 is located on two sides of the mounting groove 7, the first contact electrode 103 is connected with the power grounding wire 5 in the circuit layer 302 through the through hole 4, and the second contact electrode 104 is connected with the thin film transistor 6 of the circuit layer 302 through the through hole 4; the first contact electrode 103, the second contact electrode 104, the power ground line 5, the thin film transistor 6, and the filling material in the through hole 4 may be a conductive material, such as aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum, titanium (Ti), tungsten (W), or copper (Cu).
As shown in fig. 7 and 8, a side of the light emitting diode body 2 facing the display backplane 3 is a crystal contact surface, a side surface of the first electrode 101 facing the display backplane 3 is a first electrode contact surface, a side surface of the second electrode 102 facing the display backplane 3 is a second electrode contact surface, and a distance between the first electrode contact surface and the crystal contact surface is a first distance h 1; the distance between the second electrode contact surface and the crystal contact surface is the second distance h2, the first distance h1 is equal to the second distance h2, and the first distance h1 and the second distance h2 are both larger than 0, namely the installation heights of the first electrode 101 and the second electrode 102 are equal, so that the light-emitting diode body 2 can be horizontally installed on the display back plate 3, and the surface flatness of the display is improved.
The mounting groove 7 may be of any shape, and serves to accommodate a part of the volume of the led body 2, and in this embodiment, the mounting groove 7 is a rectangular tetrahedron-shaped groove having the same shape as the led body 2. The length of the mounting groove 7 is equal to the thickness of the light emitting diode body 2 along the first direction, the width of the mounting groove 7 is equal to the thickness of the light emitting diode body 2 along the second direction, the second direction is parallel to the upper surface of the planarization layer 301 and is perpendicular to the first direction, namely, the side wall surface of the light emitting diode body 2 is in contact with the inner wall surface of the mounting groove 7 but does not generate stress.
As shown in fig. 2, the depth H of the mounting groove 7 is greater than the first distance H1, and the thickness of the contact electrode ensures that a gap exists between the light emitting diode body 2 and the bottom surface of the mounting groove 7, that is, when the light emitting diode is mounted on the display backplate 3, a buffer gap 701 exists between the light emitting diode body 2 and the display backplate 3, and the electrode assembly of the light emitting diode can be bonded with the contact electrode assembly on the display backplate 3 through solder paste, and in the process of pressing down the light emitting diode, only the force is applied between the electrode assembly on the light emitting diode and the contact electrode assembly on the display backplate 3, and no force is applied between the light emitting diode body 2 and the display backplate 3, so that the force-applied area is reduced compared with the prior art, and the situation of damaging the thin film transistor 6 and the power ground line.
Example 2:
as shown in fig. 2 and 4, an LED display light-emitting unit includes: light emitting diodes and a display backplane 3;
the light emitting diode includes a light emitting diode body 2 and an electrode assembly disposed on the light emitting diode body 2;
the display back plate 3 comprises a substrate 303, a circuit layer 302 and a planarization layer 301 which are sequentially stacked;
among others, the substrate 303 may include a transparent glass material, such as: silicon dioxide (SiO 2). The substrate may also comprise a transparent plastic material, such as: polyether sulfone (PES), Polyacrylate (PAR), polyether imide (PEI), polyethylene terephthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide, Polycarbonate (PC), cellulose Triacetate (TAC), or cellulose propionate (CAP).
The planarization layer 301 covers the circuit layer 302 and is used to smooth and eliminate the step difference on the circuit layer 302. The planarization layer 301 includes organic materials such as: polymethyl methacrylate (PMMA) or Polystyrene (PS), a polymer derivative having a phenol group, a propylene-based polymer, an imide-based polymer, an aryl ether-based polymer, an amide-based polymer, a fluorine-based polymer, a p-xylene-based polymer, a vinyl alcohol-based polymer, or any combination thereof.
The circuit layer 302 includes a driving circuit for driving the light emitting diode, and specifically includes: a buffer layer 3023, a gate insulating layer 3022, an interlayer insulating layer 3021, a thin film transistor 6 (TFT), a power supply ground line 5, and the like.
Wherein the buffer layer 3023 is disposed over the substrate 303, a substantially flat surface may be provided over the substrate 303, which may reduce or prevent the penetration of foreign substances or moisture through the substrate 303. The buffer layer 3023 includes inorganic materials such as: silicon oxide (SiO 2), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (Al 2O 3), aluminum nitride (AlN), titanium oxide (TiO 2), or titanium nitride (TiN), and the buffer layer 3023 may also include organic materials such as: polyimide, polyester, or acrylic.
As shown in fig. 4, the thin film transistor 6 (i.e., TFT) includes an active layer 604, a gate electrode 603, a source electrode 601, and a drain electrode 602. The active layer 604 may include a semiconductor material such as amorphous silicon or polysilicon, and the active layer 604 may include other materials such as: an organic semiconductor material or an oxide semiconductor material. The gate 603, the source 601, and the drain 602 may include low resistance metal materials, such as: aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu), or the like. The Thin Film Transistor (TFT) is a top gate type thin film transistor or a bottom gate type thin film transistor.
A gate insulating layer 3022 is used to insulate the gate electrode 603 and the active layer 604, and includes an inorganic material such as SiO2, SiNx, SiON, Al2O3, TiO2, tantalum oxide (Ta 2O 5), hafnium oxide (HfO 2), or zinc oxide (ZnO 2).
The interlayer insulating layer 3021 for insulating between the source electrode 601 and the gate electrode 603 and between the drain electrode 602 and the gate electrode 603 includes inorganic materials such as: SiO2, SiNx, SiON, Al2O3, TiO2, tantalum oxide (Ta 2O 5), hafnium oxide (HfO 2), zinc oxide (ZnO 2), and the like.
The power supply ground line 5 may be formed on one of a plurality of insulating films disposed below the planarization layer 301, or formed over the interlayer insulating layer 3021 or the gate insulating layer 3022.
The planarization layer 301 is provided with a mounting groove 7 for accommodating the led body 2, wherein the thickness L of the planarization layer 301 is greater than the depth H of the mounting groove 7, and a gap exists between a side surface of the led body 2 facing the display back plate 3 and the bottom surface of the mounting groove 7.
The light emitting diode body 2 includes a first semiconductor layer 201, a light emitting layer 202, and a second semiconductor layer 203 stacked in a first direction parallel to the upper surface of the planarization layer 301 of the display backplane 3, i.e., the light emitting diode body 2 is vertically mounted on the upper surface of the planarization layer 301 of the display backplane 3.
The led body 2 is electrically connected to the circuit layer 302 of the display back plate 3 through an electrode assembly.
The electrode assembly includes a first electrode 101 and a second electrode 102, the first electrode 101 being disposed on a surface of the first semiconductor layer 201 on a side facing away from the light-emitting layer 202; the second electrode 102 is arranged on the surface of the second semiconductor layer 203 on the side away from the light-emitting layer 202; the planarization layer 301 of the display back plate 3 is provided with a contact electrode assembly connected with the electrode assembly, the contact electrode assembly is communicated with the circuit layer, wherein the contact electrode assembly comprises a first contact electrode 103 and a second contact electrode 104, and the first contact electrode 103 and the second contact electrode 104 are respectively arranged at two sides of the opening of the mounting groove 7 along the first direction.
Here, the first semiconductor layer 201 may be an N/P type doped GaN layer, the light emitting layer 202 may be a quantum well layer, and the second semiconductor layer 203 may be a P/N type doped GaN layer. When an electric signal is applied to the first electrode 101 and the second electrode 102, electrons in the N-type semiconductor and holes in the P-type semiconductor are intensively collisionally recombined in the light emitting layer to generate photons, and energy is emitted in the form of photons. The first electrode 101 and the second electrode 102 are made of a conductive material such as metal, and may specifically include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (mo), titanium (Ti), tungsten (W), copper (Cu), or the like.
The distance between the first contact electrode 103 and the second contact electrode 104 is equal to the thickness of the light emitting diode body 2 along the first direction, i.e. the first electrode 101 is in full-area contact with the first contact electrode 103, and the second electrode 102 is in full-area contact with the second contact electrode 104.
A through hole 4 is formed in the planarization layer 301, conductive filling materials are filled in the through hole 4, the through hole 4 is located on two sides of the mounting groove 7, the first contact electrode 103 is connected with the power grounding wire 5 in the circuit layer 302 through the through hole 4, and the second contact electrode 104 is connected with the thin film transistor 6 of the circuit layer 302 through the through hole 4; the first contact electrode 103, the second contact electrode 104, the power ground line 5, and the filling material in the through hole 4 may be a conductive material, such as aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (mo), titanium (Ti), tungsten (W), copper (Cu), or the like.
As shown in fig. 7 and 8, a side of the light emitting diode body 2 facing the display backplane 3 is a crystal contact surface, a side surface of the first electrode 101 facing the display backplane 3 is a first electrode contact surface, a side surface of the second electrode 102 facing the display backplane 3 is a second electrode contact surface, and a distance between the first electrode contact surface and the crystal contact surface is a first distance h 1; the distance between the second electrode contact surface and the crystal contact surface is the second distance h2, the first distance h1 is equal to the second distance h2, and the first distance h1 and the second distance h2 are both larger than 0, namely the installation heights of the first electrode 101 and the second electrode 102 are equal, so that the light-emitting diode body 2 can be horizontally installed on the display back plate 3, and the surface flatness of the display is improved.
The mounting groove 7 may be of any shape, and serves to accommodate a part of the volume of the led body 2, and in this embodiment, the mounting groove 7 is a rectangular tetrahedron-shaped groove having the same shape as the led body 2. The length of the mounting groove 7 is equal to the thickness of the light emitting diode body 2 along the first direction, the width of the mounting groove 7 is equal to the thickness of the light emitting diode body 2 along the second direction, the second direction is parallel to the upper surface of the planarization layer 301 and is perpendicular to the first direction, namely, the side wall surface of the light emitting diode body 2 is in contact with the inner wall surface of the mounting groove 7 but does not generate stress.
As shown in fig. 2, the depth H of the mounting groove 7 is greater than the first distance H1, and the thickness of the contact electrode ensures that a gap exists between the light emitting diode body 2 and the bottom surface of the mounting groove 7, that is, when the light emitting diode is mounted on the display backplate 3, a buffer gap 701 exists between the light emitting diode body 2 and the display backplate 3, and the electrode assembly of the light emitting diode can be bonded with the contact electrode assembly on the display backplate 3 through solder paste, and in the process of pressing down the light emitting diode, only the force is applied between the electrode assembly on the light emitting diode and the contact electrode assembly on the display backplate 3, and no force is applied between the light emitting diode body 2 and the display backplate 3, so that the force-applied area is reduced compared with the prior art, and the situation of damaging the thin film transistor 6 and the power ground line.
Example 3:
as shown in fig. 2 and 5, an LED display light-emitting unit includes: light emitting diodes and a display backplane 3;
the light emitting diode includes a light emitting diode body 2 and an electrode assembly disposed on the light emitting diode body 2;
the display back plate 3 includes a substrate 303, a circuit layer 302 and a planarization layer 301, which are sequentially stacked, wherein the substrate 303 may include a transparent glass material, such as: silicon dioxide (SiO 2), the substrate may also comprise a transparent plastic material such as: organic materials such as polyether sulfone (PES), Polyacrylate (PAR), polyether imide (PEI), polyethylene terephthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide, Polycarbonate (PC), cellulose Triacetate (TAC), or cellulose propionate (CAP); the circuit layer 302 includes a driving circuit for driving the light emitting diode; the planarization layer 301 covers the circuit layer 302, and can remove the step difference on the circuit layer 302 for planarization, and the planarization layer 301 can include organic materials, such as: polymethyl methacrylate (PMMA) or Polystyrene (PS), a polymer derivative having a phenol group, a propylene-based polymer, an imide-based polymer, an aryl ether-based polymer, an amide-based polymer, a fluorine-based polymer, a p-xylene-based polymer, a vinyl alcohol-based polymer, or any combination thereof.
The planarization layer 301 is provided with a mounting groove 7 for accommodating the led body 2, wherein the thickness L of the planarization layer 301 is greater than the depth H of the mounting groove 7, and a gap exists between a side surface of the led body 2 facing the display back plate 3 and the bottom surface of the mounting groove 7.
The bottom surface of the mounting groove 7 is provided with a metal reflecting layer 8 for reflecting the light beam emitted by the light emitting diode body to the display back plate and increasing the luminous efficiency of the light emitting unit, wherein a gap exists between one side surface of the light emitting diode body 2 facing the display back plate 3 and the metal reflecting layer 8.
The light emitting diode body 2 includes a first semiconductor layer 201, a light emitting layer 202, and a second semiconductor layer 203 stacked in a first direction parallel to the upper surface of the planarization layer 301 of the display backplane 3, i.e., the light emitting diode body 2 is vertically mounted on the upper surface of the planarization layer 301 of the display backplane 3.
The led body 2 is electrically connected to the circuit layer 302 of the display back plate 3 through an electrode assembly.
The electrode assembly includes a first electrode 101 and a second electrode 102, the first electrode 101 being disposed on a surface of the first semiconductor layer 201 on a side facing away from the light-emitting layer 202; the second electrode 102 is arranged on the surface of the second semiconductor layer 203 on the side away from the light-emitting layer 202; the planarization layer 301 of the display back plate 3 is provided with a contact electrode assembly connected with the electrode assembly, the contact electrode assembly is communicated with the circuit layer, wherein the contact electrode assembly comprises a first contact electrode 103 and a second contact electrode 104, and the first contact electrode 103 and the second contact electrode 104 are respectively arranged at two sides of the opening of the mounting groove 7 along the first direction.
Here, the first semiconductor layer 201 may be an N/P type doped GaN layer, the light emitting layer 202 may be a quantum well layer, and the second semiconductor layer 203 may be a P/N type doped GaN layer. When an electric signal is applied to the first electrode 101 and the second electrode 102, electrons in the N-type semiconductor and holes in the P-type semiconductor are intensively collisionally recombined in the light emitting layer to generate photons, and energy is emitted in the form of photons. The first electrode 101 and the second electrode 102 are made of a conductive material such as metal, and may specifically include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (mo), titanium (Ti), tungsten (W), copper (Cu), or the like.
The distance between the first contact electrode 103 and the second contact electrode 104 is equal to the thickness of the light emitting diode body 2 along the first direction, i.e. the first electrode 101 is in full-area contact with the first contact electrode 103, and the second electrode 102 is in full-area contact with the second contact electrode 104.
A through hole 4 is formed in the planarization layer 301, conductive filling materials are filled in the through hole 4, the through hole 4 is located on two sides of the mounting groove 7, the first contact electrode 103 is connected with the power grounding wire 5 in the circuit layer 302 through the through hole 4, and the second contact electrode 104 is connected with the thin film transistor 6 of the circuit layer 302 through the through hole 4; the first contact electrode 103, the second contact electrode 104, the power ground line 5, the thin film transistor 6, and the filling material in the through hole 4 may be a conductive material, such as aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum, titanium (Ti), tungsten (W), or copper (Cu).
As shown in fig. 7 and 8, a side of the light emitting diode body 2 facing the display backplane 3 is a crystal contact surface, a side surface of the first electrode 101 facing the display backplane 3 is a first electrode contact surface, a side surface of the second electrode 102 facing the display backplane 3 is a second electrode contact surface, and a distance between the first electrode contact surface and the crystal contact surface is a first distance h 1; the distance between the second electrode contact surface and the crystal contact surface is the second distance h2, the first distance h1 is equal to the second distance h2, and the first distance h1 and the second distance h2 are both larger than 0, namely the installation heights of the first electrode 101 and the second electrode 102 are equal, so that the light-emitting diode body 2 can be horizontally installed on the display back plate 3, and the surface flatness of the display is improved.
The mounting groove 7 may be of any shape, and serves to accommodate a part of the volume of the led body 2, and in this embodiment, the mounting groove 7 is a rectangular tetrahedron-shaped groove having the same shape as the led body 2. The length of the mounting groove 7 is equal to the thickness of the light emitting diode body 2 along the first direction, the width of the mounting groove 7 is equal to the thickness of the light emitting diode body 2 along the second direction, the second direction is parallel to the upper surface of the planarization layer 301 and is perpendicular to the first direction, namely, the side wall surface of the light emitting diode body 2 is in contact with the inner wall surface of the mounting groove 7 but does not generate stress.
As shown in fig. 2 and 5, the depth H of the mounting groove 7 is greater than the first distance H1, and the thickness of the contact electrode ensures that there is a gap between the light emitting diode body 2 and the bottom surface of the mounting groove 7, and the bottom surface of the mounting groove 7 is provided with the metal reflective layer 8, and there is also a gap between one side surface of the light emitting diode body 2 facing the display backplate 3 and the metal reflective layer 8, i.e. when the light emitting diode is mounted on the display backplate 3, there is a buffer gap 701 between the light emitting diode body 2 and the metal reflective layer 8, and the electrode assembly of the light emitting diode can be bonded with the contact electrode assembly on the display backplate 3 by solder paste, during the process of pressing down the light emitting diode, only the electrode assembly on the light emitting diode is stressed with the contact electrode assembly on the display backplate 3, and no stress is exerted between the light emitting diode body 2 and the display, the thin film transistor 6 and the power ground line 5 on the circuit layer 302 are prevented from being damaged by voltage.
Example 4:
as shown in fig. 2 and 6, an LED display light emitting unit includes: light emitting diodes and a display backplane 3;
the light emitting diode includes a light emitting diode body 2 and an electrode assembly disposed on the light emitting diode body 2;
the display back plate 3 includes a substrate 303, a circuit layer 302 and a planarization layer 301, which are sequentially stacked, wherein the substrate 303 may include a transparent glass material, such as: silicon dioxide (SiO 2), the substrate may also comprise a transparent plastic material such as: organic materials such as polyether sulfone (PES), Polyacrylate (PAR), polyether imide (PEI), polyethylene terephthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide, Polycarbonate (PC), cellulose Triacetate (TAC), or cellulose propionate (CAP); the circuit layer 302 includes a driving circuit for driving the light emitting diode; the planarization layer 301 covers the circuit layer 302, and can remove the step difference on the circuit layer 302 for planarization, and the planarization layer 301 can include organic materials, such as: polymethyl methacrylate (PMMA) or Polystyrene (PS), a polymer derivative having a phenol group, a propylene-based polymer, an imide-based polymer, an aryl ether-based polymer, an amide-based polymer, a fluorine-based polymer, a p-xylene-based polymer, a vinyl alcohol-based polymer, or any combination thereof.
The planarization layer 301 is provided with a mounting groove 7 for accommodating the led body 2, wherein the thickness L of the planarization layer 301 is greater than the depth H of the mounting groove 7, and a gap exists between one side surface of the led body 2 facing the display back plate 3 and the bottom surface of the mounting groove 7.
The light emitting diode body 2 includes a first semiconductor layer 201, a light emitting layer 202, and a second semiconductor layer 203 stacked in a first direction parallel to the upper surface of the planarization layer 301 of the display backplane 3, i.e., the light emitting diode body 2 is vertically mounted on the upper surface of the planarization layer 301 of the display backplane 3.
The led body 2 is electrically connected to the circuit layer 302 of the display back plate 3 through an electrode assembly.
The electrode assembly includes a first electrode 101 and a second electrode 102, the first electrode 101 being disposed on a surface of the first semiconductor layer 201 on a side facing away from the light-emitting layer 202; the second electrode 102 is arranged on the surface of the second semiconductor layer 203 on the side away from the light-emitting layer 202; the planarization layer 301 of the display back plate 3 is provided with a contact electrode assembly connected with the electrode assembly, the contact electrode assembly is communicated with the circuit layer, wherein the contact electrode assembly comprises a first contact electrode 103 and a second contact electrode 104, and the first contact electrode 103 and the second contact electrode 104 are respectively arranged at two sides of the opening of the mounting groove 7 along the first direction.
Here, the first semiconductor layer 201 may be an N/P type doped GaN layer, the light emitting layer 202 may be a quantum well layer, and the second semiconductor layer 203 may be a P/N type doped GaN layer. When an electric signal is applied to the first electrode 101 and the second electrode 102, electrons in the N-type semiconductor and holes in the P-type semiconductor are intensively collisionally recombined in the light emitting layer to generate photons, and energy is emitted in the form of photons. The first electrode 101 and the second electrode 102 are made of a conductive material such as metal, and may specifically include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (mo), titanium (Ti), tungsten (W), copper (Cu), or the like.
The distance between the first contact electrode 103 and the second contact electrode 104 is larger than the thickness of the light emitting diode body 2 in the first direction, i.e. the first electrode 101 is in partial contact with the first contact electrode 103 and the second electrode 102 is in partial contact with the second contact electrode 104.
A through hole 4 is formed in the planarization layer 301, conductive filling materials are filled in the through hole 4, the through hole 4 is located on two sides of the mounting groove 7, the first contact electrode 103 is connected with the power grounding wire 5 in the circuit layer 302 through the through hole 4, and the second contact electrode 104 is connected with the thin film transistor 6 of the circuit layer 302 through the through hole 4; the first contact electrode 103, the second contact electrode 104, the power ground line 5, the thin film transistor 6, and the filling material in the through hole 4 may be a conductive material, such as aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum, titanium (Ti), tungsten (W), or copper (Cu).
As shown in fig. 7 and 8, a side of the light emitting diode body 2 facing the display backplane 3 is a crystal contact surface, a side surface of the first electrode 101 facing the display backplane 3 is a first electrode contact surface, a side surface of the second electrode 102 facing the display backplane 3 is a second electrode contact surface, and a distance between the first electrode contact surface and the crystal contact surface is a first distance h 1; the distance between the second electrode contact surface and the crystal contact surface is the second distance h2, the first distance h1 is equal to the second distance h2, and the first distance h1 and the second distance h2 are both larger than 0, namely the installation heights of the first electrode 101 and the second electrode 102 are equal, so that the light-emitting diode body 2 can be horizontally installed on the display back plate 3, and the surface flatness of the display is improved.
The mounting groove 7 may be of any shape, and serves to accommodate a part of the volume of the led body 2, and in this embodiment, the mounting groove 7 is a rectangular tetrahedron-shaped groove having the same shape as the led body 2. The length W of the mounting groove 7 is greater than the thickness I of the light emitting diode body 2 in the first direction, the distance between the first contact electrode 103 and the second contact electrode 104 is equal to the length W of the mounting groove 7, the width of the mounting groove 7 is equal to the thickness of the light emitting diode body 2 in the second direction, the second direction is parallel to the upper surface of the planarization layer 301 and perpendicular to the first direction, that is, the front and rear side wall surfaces of the light emitting diode body 2 are in contact with the inner wall surface of the mounting groove 7 without generating stress, a heat dissipation gap 702 is formed between the left and right side wall surfaces of the light emitting diode body 2 and the inner wall surface of the mounting groove 7, and heat generated by the light emitting diode body 2 can be dissipated from the heat dissipation gap 702.
As shown in fig. 2, the depth H of the mounting groove 7 is greater than the first distance H1, and the thickness of the contact electrode ensures that a gap exists between the light emitting diode body 2 and the bottom surface of the mounting groove 7, that is, when the light emitting diode is mounted on the display backplate 3, a buffer gap 701 exists between the light emitting diode body 2 and the display backplate 3, and the electrode assembly of the light emitting diode can be bonded with the contact electrode assembly on the display backplate 3 through solder paste, and in the process of pressing down the light emitting diode, only the force is applied between the electrode assembly on the light emitting diode and the contact electrode assembly on the display backplate 3, and no force is applied between the light emitting diode body 2 and the display backplate 3, so that the force-applied area is reduced compared with the prior art, and the situation of damaging the thin film transistor 6 and the power ground line.
In the description of the present specification, reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "example", "specific example", or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (8)
1. An LED display lighting unit, comprising: a light emitting diode and a display backplane;
the light emitting diode comprises a light emitting diode body and an electrode assembly arranged on the light emitting diode body;
the display back plate comprises a substrate, a circuit layer and a planarization layer which are sequentially stacked;
the planarization layer is provided with a mounting groove for accommodating the light-emitting diode body;
a gap is formed between one side of the light-emitting diode body facing the display back plate and the bottom surface of the mounting groove;
the light-emitting diode body comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are arranged in a stacking mode along a first direction, and the first direction is parallel to the upper surface of the planarization layer of the display back plate; the electrode assembly comprises a first electrode and a second electrode, wherein the first electrode is arranged on one side surface of the first semiconductor layer, which faces away from the light-emitting layer; the second electrode is arranged on the surface of one side, away from the light-emitting layer, of the second semiconductor layer; a contact electrode assembly connected with the electrode assembly is arranged on the planarization layer, and the contact electrode assembly is communicated with the circuit layer; the contact electrode assembly comprises a first contact electrode and a second contact electrode, and the first contact electrode and the second contact electrode are respectively arranged on two sides of the opening of the mounting groove along the first direction;
the light emitting diode body is electrically connected with the circuit layer of the display back plate through an electrode assembly.
2. The light-emitting unit of LED display according to claim 1, wherein the distance between the first contact electrode and the second contact electrode is greater than or equal to the thickness of the LED body along the first direction.
3. The light-emitting unit of LED display as claimed in claim 2, wherein the planarization layer has a through hole filled with a conductive filling material, the through hole is located at two sides of the mounting groove, the first contact electrode is connected to the power ground of the circuit layer through the through hole, and the second contact electrode is connected to the TFT in the circuit layer through the through hole.
4. The LED display lighting unit of claim 1, wherein a side of the LED body facing the display backplane is a wafer contact surface; the surface of one side, facing the display back plate, of the first electrode is a first electrode contact surface; the surface of one side, facing the display back plate, of the second electrode is a second electrode contact surface; the distance between the first electrode contact surface and the crystal contact surface is a first distance; the distance between the second electrode contact surface and the crystal contact surface is a second distance; the first pitch is equal to the second pitch, and the first pitch is greater than 0.
5. The LED display lighting unit of claim 4, wherein the depth of said mounting recess is greater than said first pitch.
6. The light-emitting unit of LED display of claim 1, wherein the length of the mounting groove is greater than or equal to the thickness of the LED body along the first direction.
7. The light-emitting unit of claim 1, wherein the width of the mounting groove is greater than or equal to the thickness of the light-emitting diode body along a second direction, the second direction is parallel to the upper surface of the planarization layer and perpendicular to the first direction.
8. The light-emitting unit of LED display as claimed in claim 1, wherein a metal reflective layer is disposed at the bottom of the mounting groove, and a gap exists between the side of the LED body facing the display backplane and the metal reflective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020188707.0U CN211265475U (en) | 2020-02-20 | 2020-02-20 | LED display light-emitting unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020188707.0U CN211265475U (en) | 2020-02-20 | 2020-02-20 | LED display light-emitting unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211265475U true CN211265475U (en) | 2020-08-14 |
Family
ID=71960685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020188707.0U Active CN211265475U (en) | 2020-02-20 | 2020-02-20 | LED display light-emitting unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211265475U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112968030A (en) * | 2020-12-30 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Display panel and manufacturing method thereof |
| WO2022193300A1 (en) * | 2021-03-19 | 2022-09-22 | 京东方科技集团股份有限公司 | Light-emitting substrate and display device |
| WO2023024041A1 (en) * | 2021-08-26 | 2023-03-02 | 重庆康佳光电技术研究院有限公司 | Method for transferring light-emitting element, and display panel |
-
2020
- 2020-02-20 CN CN202020188707.0U patent/CN211265475U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112968030A (en) * | 2020-12-30 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Display panel and manufacturing method thereof |
| WO2022193300A1 (en) * | 2021-03-19 | 2022-09-22 | 京东方科技集团股份有限公司 | Light-emitting substrate and display device |
| WO2023024041A1 (en) * | 2021-08-26 | 2023-03-02 | 重庆康佳光电技术研究院有限公司 | Method for transferring light-emitting element, and display panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN211265475U (en) | LED display light-emitting unit | |
| US10985205B2 (en) | Display panel and method for manufacturing display panel | |
| KR102522591B1 (en) | Display device and manufacturing method thereof | |
| US20180158808A1 (en) | Led display module, display device and method of manufacturing led display module | |
| JP6431107B2 (en) | Light emitting device | |
| US10593837B2 (en) | Light emitting device with a stepped structure | |
| TW200403945A (en) | Organic electroluminescent display device and method of fabricating the same | |
| KR20120122048A (en) | Light emitting device package | |
| JP2007026970A (en) | Organic light emitting display device | |
| WO2020056865A1 (en) | Display panel and display device | |
| CN105789260B (en) | Transparent display panel and preparation method thereof | |
| KR20200015082A (en) | Micro led structure and manufacturing method of the same | |
| US11387387B2 (en) | Micro light emitting device display apparatus | |
| CN111540762A (en) | LED display panel and LED display | |
| CN113284917A (en) | LED display light-emitting unit | |
| CN111540761A (en) | Mini/Micro LED display panel and display device | |
| CN107546251A (en) | A kind of OLED display panel and preparation method thereof | |
| KR101861721B1 (en) | Light emitting device | |
| US20190058024A1 (en) | Organic light emitting diode display panel and method for manufacturing same | |
| KR20120122047A (en) | Light emitting device package | |
| CN211350650U (en) | Mini/Micro LED display panel and display device | |
| KR20170078562A (en) | Light emitting device | |
| CN211125653U (en) | L ED display panel and L ED display | |
| CN211480031U (en) | LED display with heat dissipation function | |
| US20200091378A1 (en) | Display panel and display apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 402760 No.69, Wushan Road, Biquan street, Bishan District, Chongqing Patentee after: Chongqing Kangjia Optoelectronic Technology Co.,Ltd. Country or region after: China Address before: 402760 No.69, Wushan Road, Biquan street, Bishan District, Chongqing Patentee before: Chongqing Kangjia Photoelectric Technology Research Institute Co.,Ltd. Country or region before: China |