CN111540761A - Mini/Micro LED display panel and display device - Google Patents
Mini/Micro LED display panel and display device Download PDFInfo
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- CN111540761A CN111540761A CN202010213690.4A CN202010213690A CN111540761A CN 111540761 A CN111540761 A CN 111540761A CN 202010213690 A CN202010213690 A CN 202010213690A CN 111540761 A CN111540761 A CN 111540761A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a display panel and a display device of a Mini/Micro LED, wherein the display panel of the Mini/Micro LED comprises a display back plate and a plurality of Mini/Micro LEDs distributed in an array and arranged on the display back plate at intervals, and light resistance blocks for heat dissipation are arranged on the periphery of the Mini/Micro LEDs; the light resistance block is doped with heat-conducting ceramic materials. According to the invention, the light resistance blocks doped with the heat-conducting ceramic material are arranged around the Mini/Micro LED of the display panel as the heat dissipation units, so that heat generated by the LED is dissipated from the light emitting side, and meanwhile, side wall light generated by the LED can be reflected or isolated; the display panel can meet the heat dissipation requirement and the visual effect requirement at the same time, so that the service life of the LED can be prolonged, and the display quality can be improved.
Description
Technical Field
The invention relates to the field of display, in particular to a display panel and a display device of a Mini/Micro LED.
Background
The Mini/Micro LED display has the advantages of good stability, long service life and high operating temperature, simultaneously inherits the advantages of low power consumption, color saturation, high reaction speed, high contrast and the like of a Light-Emitting Diode (LED), and has great application prospect. However, 20-30% of the LEDs are converted into light energy during operation, and the rest 70% -80% are converted into heat energy, the Micro/Mini LED display and backlight are based on LED luminescence, as the requirements for resolution and brightness of the Micro/Mini LEDs increase, the number of LEDs in a unit area continuously increases, the pitch of the LEDs continuously decreases, the driving current of a single LED increases, and the display has a long-time operation requirement, which leads to an increase in the heat productivity of a single LED and an increase in the thermal coupling effect between adjacent LEDs. The heat concentration can have the following effects on the LED and the substrate: 1. the heat energy accumulation can affect the light-emitting rate of the LED and reduce the service life of the LED; 2. the stability and compactness of the resin type encapsulating material are reduced due to long-time heating, and the LED electrode is easy to be corroded by the outside; 3. in Active Matrix (AM) backplane driving, heat energy is conducted to a Thin Film Transistor (TFT) device portion through a bonding electrode, so that the TFT device is in a state of heating aging for a long time, and active layers (such as an a-Si layer, a metal oxide layer, and a p-Si layer) have problems of poor stability, performance degradation (such as reduced mobility and small on-state current), and the like, thereby reducing the display quality of the whole display system and shortening the service life.
As shown in fig. 1, after the LEDs 2 are transfer-bonded to the display backplane 1, a resin encapsulation layer 3 (e.g., an epoxy layer or a silicone layer) is disposed above the LEDs 2, so that the obtained display panel 100 can perform a water and oxygen blocking function, but the resin encapsulation layer 3 has a low heat dissipation coefficient, and cannot perform effective heat dissipation, so that the thermal stability of the display panel 100 is poor, and the display quality of the display panel 100 is reduced and the service life of the display panel 100 is shortened.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a display panel and a display device of Mini/Micro LEDs, which are used to solve the problem of poor thermal conductivity of the conventional display panel, resulting in the degradation of the display quality and the service life of the display panel.
The technical scheme of the invention is as follows:
the invention provides a Mini/Micro LED display panel, which comprises a display back plate and a plurality of Mini/Micro LEDs distributed in an array and arranged on the display back plate at intervals, wherein light resistance blocks for heat dissipation are arranged on the periphery of the Mini/Micro LEDs; the light resistance block is doped with heat-conducting ceramic materials.
The invention is further provided with the light resistance blocks are white light resistance blocks, black light resistance blocks or gray light resistance blocks.
According to a further arrangement of the present invention, the heat conducting ceramic material in the doped heat conducting ceramic material photoresist block is one or more of aluminum oxide, beryllium oxide, aluminum nitride and boron nitride.
According to the further arrangement of the invention, the Mini/Micro LED is a flip-chip LED.
The Mini/Micro LED further comprises a first electrode, a first semiconductor layer and a light emitting layer which are sequentially stacked from bottom to top, a second electrode which is integrally parallel to the first electrode, the first semiconductor layer and the light emitting layer, and a second semiconductor layer which is arranged on the light emitting layer and the second electrode.
According to the further arrangement of the invention, the first semiconductor layer is an N-type doped GaN layer, and the second semiconductor layer is a P-type doped GaN layer; or
The first semiconductor layer is a P-type doped GaN layer, and the second semiconductor layer is an N-type doped GaN layer.
In a further configuration of the invention, the light-emitting layer is a quantum well layer.
According to a further aspect of the present invention, the display backplane comprises a substrate, a driving circuit layer disposed on the substrate, a planarization layer covering the driving circuit layer, a first contact electrode and a second contact electrode disposed on the planarization layer; the first contact electrode and the second contact electrode are respectively bonded with the first electrode and the second electrode of the Mini/Micro LED; the first contact electrode is electrically connected with the driving circuit layer through a via hole penetrating through the flat layer.
In a further arrangement of the present invention, the driving circuit layer includes a buffer layer, a gate insulating layer, an interlayer insulating layer, and a TFT.
According to a further aspect of the present invention, the TFT includes an active layer, a gate electrode, a source electrode, and a drain electrode; the grid insulating layer is arranged between the grid and the active layer; the source electrode and the grid electrode and the drain electrode and the grid electrode are respectively separated by the interlayer insulating layer.
The second aspect of the present invention also provides a display device comprising the display panel of Mini/Micro LEDs described in the first aspect of the present invention.
Has the advantages that: the invention provides a display panel and a display device of a Mini/Micro LED, wherein the display panel of the Mini/Micro LED comprises a display back plate and a plurality of Mini/Micro LEDs distributed in an array and arranged on the display back plate at intervals, and light resistance blocks for heat dissipation are arranged on the periphery of the Mini/Micro LEDs; the light resistance block is doped with heat-conducting ceramic materials. According to the invention, the light resistance blocks doped with the heat-conducting ceramic material are arranged around the Mini/Micro LED of the display panel as the heat dissipation units, so that heat generated by the LED is dissipated from the light emitting side, and meanwhile, side wall light generated by the LED can be reflected or isolated; the display panel can meet the heat dissipation requirement and the visual effect requirement at the same time, so that the service life of the LED can be prolonged, and the display quality can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained according to the structures shown in the drawings without creative efforts for those skilled in the art, wherein:
FIG. 1 is a schematic structural diagram of a conventional LED display panel;
FIG. 2 is a schematic structural diagram of a Mini/Micro LED display panel according to the present invention;
FIG. 3 is a schematic structural diagram of a photoresist block of a display panel of a Mini/Micro LED according to the present invention;
FIG. 4 is a schematic diagram illustrating the action principle of a heat-conducting ceramic material in a light-blocking block of a display panel of a Mini/Micro LED on sidewall light generated by the Mini/Micro LED according to the present invention;
FIG. 5 is a schematic structural view of a Mini/Micro LED of a display panel of the Mini/Micro LED of the present invention;
FIG. 6 is a schematic structural diagram of another Mini/Micro LED display panel according to the present invention;
FIG. 7 is a schematic structural view of another Mini/Micro LED display panel according to the present invention.
Detailed Description
The display panel has the problems of reduced display quality and shortened service life due to poor heat dissipation of the packaging layer of the conventional display panel. The invention provides a display panel and a display device of a Mini/Micro LED, and the invention is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the embodiments and claims, the terms "a" and "an" can mean "one or more" unless the article is specifically limited.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
Referring to fig. 2 to 7, the present invention provides a preferred embodiment of a Mini/Micro LED display panel.
Referring to fig. 2 to 4, a Mini/Micro LED display panel 100 is applied to a display device, where the Mini/Micro LED display panel 100 includes a display back panel 1, a plurality of Mini/Micro LEDs 2 arranged on the display back panel at intervals and distributed in an array, and photoresist blocks 4 for heat dissipation are arranged around the Mini/Micro LEDs 2; the photoresist block 4 is a photoresist block doped with a heat conductive ceramic material 42. Specifically, after a plurality of Mini/Micro LEDs 2 distributed in an array are transferred and bonded on the display back panel 1, heat dissipation material filling is coated among the Mini/Micro LEDs 2, the heat dissipation material is formed by mixing a light resistance material 41 without adding a photosensitizer and a heat conduction ceramic material 42, and the proportion of the light resistance material 41 and the heat conduction ceramic material 42 can be matched according to specific heat dissipation requirements and visual effect requirements; after the heat dissipation material is cured, the light resistance blocks 4 doped with the heat conduction ceramic material 42 are formed, and therefore the light resistance blocks 4 for heat dissipation are filled around each Mini/Micro LED 2. The heat dissipation material composed of the light resistance material 41 (without photosensitizer) and the heat conduction ceramic material 42 has the coatability and the segment difference filling capacity of light resistance and the heat dissipation performance of ceramic sealing, can be applied to filling between Mini/Micro LED 2 with a small distance, helps the LED to dissipate heat, and prolongs the service life of the LED; the heat-conducting ceramic material 42 is filled between the Mini/Micro LEDs 2, and has the function of reflecting the light on the side wall, so that the light-emitting rate of the LEDs is improved; the heat dissipation material can be reasonably configured according to the terminal visual effect requirement, when high brightness is required, a white heat dissipation material scheme is adopted, and the reflection effect of the white light resistance and the heat conduction ceramic material 42 on the side wall light improves the LED light-emitting rate under the same power, so that the terminal brightness is improved to the maximum extent; when a high-quality display effect is required, the scheme of the black heat dissipation material is adopted, and the black light resistor is matched with the heat conduction ceramic material 42, so that light mixing among LEDs is effectively avoided, and the display quality can be improved.
Compared with the prior art, the light resistance blocks 4 doped with the heat-conducting ceramic material 42 are arranged around the Mini/Micro LED 2 of the display panel, so that heat generated by the LED is radiated from the light emitting side, and side wall light generated by the LED can be reflected or isolated; the display panel can meet the heat dissipation requirement and the visual effect requirement at the same time, so that the service life of the LED can be prolonged, and the display quality can be improved.
In a further implementation of an embodiment, the light-blocking blocks 4 are white light-blocking blocks, black light-blocking blocks or gray light-blocking blocks.
In a further implementation of an embodiment, the thermally conductive ceramic material 42 in the photoresist block 4 doped with the thermally conductive ceramic material 42 is one or more of aluminum oxide, beryllium oxide, aluminum nitride, and boron nitride.
The shape of the Mini/Micro LED display panel 100 may be square, circular, or the like, and the actual shape thereof may be set according to actual requirements, and the shape of the Mini/Micro LED display panel 100 is not limited in the present invention.
In a further implementation of an embodiment, the Mini/Micro LEDs are flip-chip type LEDs.
Referring to fig. 5, in a further implementation manner of an embodiment, the Mini/Micro LED 2 includes a first electrode 21, a first semiconductor layer 22 and a light emitting layer 23, which are sequentially stacked from bottom to top, a second electrode 24 disposed in parallel with the whole formed by the first electrode 21, the first semiconductor layer 22 and the light emitting layer 23, and a second semiconductor layer 25 disposed on the light emitting layer 23 and the second electrode 24.
In a further implementation of an embodiment, the first semiconductor layer 22 is an N-type doped GaN layer, and the second semiconductor layer 25 is a P-type doped GaN layer; or
The first semiconductor layer 22 is a P-type doped GaN layer, and the second semiconductor layer 25 is an N-type doped GaN layer. When an electric signal is applied to the first electrode 21 and the second electrode 22, electrons in the N-type semiconductor and holes in the P-type semiconductor collide and recombine vigorously in the light emitting layer to generate photons, and energy is emitted as photons.
In a further implementation of an embodiment, the light emitting layer 23 is a quantum well layer.
In a further implementation of an embodiment, the first electrode 21 and the second electrode 22 are metallic conductive materials, for example, the first electrode 21 and the second electrode 22 may each include, but are not limited to, one or more of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum, titanium (Ti), tungsten (W), and copper (Cu).
Referring to fig. 6, in a further implementation manner of an embodiment, the display back plate 1 includes a substrate 11, a driving circuit layer 12 disposed on the substrate 11, a flat layer 13 covering the driving circuit layer, a first contact electrode 14 and a second contact electrode 15 disposed on the flat layer 13; the first contact electrode 14 and the second contact electrode 15 are respectively bonded with the first electrode 21 and the second electrode 24 of the Mini/Micro LED 2; the first contact electrode 14 is electrically connected to the driving circuit layer 12 through a via 16 penetrating the planarization layer. The planarization layer 13 covers the driving circuit layer 12, and can eliminate step differences on the driving circuit layer 12 and planarize the same.
In a further implementation of an embodiment, the substrate 11 may comprise a transparent glass material, such as: silicon dioxide (SiO)2(ii) a Transparent plastic materials may also be included, such as: polyether sulfone (PES), Polyacrylate (PAR), polyether imide (PEI), polyethylene terephthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide, Polycarbonate (PC), cellulose Triacetate (TAC), or cellulose propionate (CAP). In a further implementation of an embodiment, the planarization layer 13 may include organic materials, such as: polymethyl methacrylate (PMMA), Polystyrene (PS), polymer derivatives having a phenolic group, propylene-based polymers, imide-based polymers, aryl ether-based polymers, amide-based polymers, fluorine-based polymers, p-xylyl-based polymers, vinyl alcohol-based polymers, or any combination thereof.
In a further implementation of an embodiment, the driving circuit layer 12 includes a plurality of TFTs, gate lines or signal lines distributed in an array for driving the LED chips.
In a further implementation of an embodiment, the driving circuit layer 12 includes a buffer layer, a gate insulating layer, an interlayer insulating layer, and a TFT.
In a further implementation of an embodiment, the TFT may be a top gate type TFT or a bottom gate type TFT.
Referring to FIG. 7, in a further implementation of an embodiment, the TFTs are top-gate TFTs; further, the TFT124 includes an active layer 1241, a source 1242, a drain 1243 and a gate 1244; the gate insulating layer 122 is disposed between the active layer 1241 and the gate electrode 1244; the interlayer insulating layer 123 is disposed between the source electrode 1242 and the gate electrode 1244, and the interlayer insulating layer 123 is disposed between the drain electrode 1243 and the gate electrode 1244, and plays a role in blocking each of them. In addition, the first contact electrode 14 is connected to the drain 1243 of the TFT124 through the via 16 penetrating the planarization layer 13, and the second contact electrode 15 is connected to a ground line (e.g., VSS, which is not shown in fig. 7). The buffer layer 121 is disposed over the substrate 11, and may provide a flat surface over the substrate 11, which may reduce or prevent penetration of foreign substances or moisture through the substrate 11.
In a further embodiment of an embodiment, the first contact electrode 14, the second contact electrode 15, and the material filled in the via hole 16 may be independently selected from, but not limited to, at least one of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum, titanium (Ti), tungsten (W), and copper (Cu).
In a further implementation of an embodiment, the buffer layer 121 may include, but is not limited to, inorganic materials such as: silicon oxide (SiO)2) Silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (Al)2O3) Aluminum nitride (AlN), titanium oxide (TiO)2) Or titanium nitride (TiN); the buffer layer 121 may include, but is not limited to, organic materials such as: polyimide, polyester, or acrylic.
In further implementations of an embodiment, the active layer 1241 may comprise a semiconductor material, such as amorphous silicon or polysilicon; the active layer 1241 may also include other materials, such as: an organic semiconductor material or an oxide semiconductor material.
In a further implementation of an embodiment, the gate 1244, the source 1242 and the drain 1243 may be independently selected from low resistance metal materials, such as: at least one of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu).
In a further implementation of an embodiment, the gate insulating layer 122 may include, but is not limited to, inorganic materials such as: SiO 22、SiNx、SiON、Al2O3、TiO2Tantalum oxide (Ta)2O5) Hafnium oxide (HfO)2) And zinc oxide (ZnO).
In a further implementation of an embodiment, the interlayer insulating layer 204 may include, but is not limited to, inorganic materials such as: SiO 22、SiNx、SiON、Al2O3、TiO2Tantalum oxide (Ta)2O5) Hafnium oxide (HfO)2) And zinc oxide (ZnO).
Referring to fig. 2 to 7, the present invention further provides a display device, which includes a Mini/Micro LED display panel 100, the Mini/Micro LED display panel 100 includes a display back panel, a plurality of Mini/Micro LEDs 2 distributed in an array and disposed on the display back panel at intervals, and photoresist blocks 4 for heat dissipation are disposed around the Mini/Micro LEDs 2; the photoresist block 4 is a photoresist block doped with a heat conductive ceramic material 42. As described above, the details are not repeated herein.
In summary, the invention provided by the invention provides a Mini/Micro LED display panel and a display device, the Mini/Micro LED display panel comprises a display back plate, a plurality of Mini/Micro LEDs distributed in an array and arranged on the display back plate at intervals, and light resistance blocks for heat dissipation are arranged around the Mini/Micro LEDs; the light resistance block is doped with heat-conducting ceramic materials. According to the invention, the light resistance blocks doped with the heat-conducting ceramic material are arranged around the Mini/Micro LED of the display panel as the heat dissipation units, so that heat generated by the LED is dissipated from the light emitting side, and meanwhile, side wall light generated by the LED can be reflected or isolated; the display panel can meet the heat dissipation requirement and the visual effect requirement at the same time, so that the service life of the LED can be prolonged, and the display quality can be improved.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. The display panel of the Mini/Micro LED is characterized by comprising a display back plate and a plurality of Mini/Micro LEDs distributed in an array and arranged on the display back plate at intervals, wherein light resistance blocks for heat dissipation are arranged on the periphery of the Mini/Micro LEDs; the light resistance block is doped with heat-conducting ceramic materials.
2. The Mini/Micro LED display panel of claim 1, wherein the photo-resist blocks are white, black or gray photo-resist blocks.
3. The Mini/MicroLED display panel of claim 1, wherein the Mini/MicroLED is a flip-chip LED.
4. The Mini/MicroLED display panel according to claim 3, wherein the Mini/MicroLED comprises a first electrode, a first semiconductor layer and a light emitting layer stacked in this order from bottom to top, a second electrode disposed in parallel with the whole of the first electrode, the first semiconductor layer and the light emitting layer, and a second semiconductor layer disposed on the light emitting layer and the second electrode.
5. The Mini/Micro LED display panel of claim 4, wherein the first semiconductor layer is an N-type doped GaN layer and the second semiconductor layer is a P-type doped GaN layer; or
The first semiconductor layer is a P-type doped GaN layer, and the second semiconductor layer is an N-type doped GaN layer.
6. The Mini/Micro LED display panel of claim 4, wherein the light emitting layer is a quantum well layer.
7. The Mini/Micro LED display panel of claim 4, wherein the display backplane comprises a substrate, a driving circuit layer disposed on the substrate, a planarization layer covering the driving circuit layer, a first contact electrode and a second contact electrode disposed on the planarization layer; the first contact electrode and the second contact electrode are respectively bonded with the first electrode and the second electrode of the Mini/Micro LED; the first contact electrode is electrically connected with the driving circuit layer through a via hole penetrating through the flat layer.
8. The Mini/Micro LED display panel according to claim 7, wherein the driving circuit layer comprises a buffer layer, a gate insulating layer, an interlayer insulating layer and a TFT.
9. The Mini/Micro LED display panel of claim 8, wherein the TFT comprises an active layer, a gate electrode, a source electrode and a drain electrode; the grid insulating layer is arranged between the grid and the active layer; the source electrode and the grid electrode and the drain electrode and the grid electrode are respectively separated by the interlayer insulating layer.
10. A display device comprising the Mini/Micro LED according to any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010213690.4A CN111540761A (en) | 2020-03-24 | 2020-03-24 | Mini/Micro LED display panel and display device |
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| CN202010213690.4A CN111540761A (en) | 2020-03-24 | 2020-03-24 | Mini/Micro LED display panel and display device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112185949A (en) * | 2020-12-03 | 2021-01-05 | 浙江清华柔性电子技术研究院 | Mini/Micro LED display panel, manufacturing method thereof and display device |
| CN113257983A (en) * | 2021-05-18 | 2021-08-13 | 京东方科技集团股份有限公司 | Display substrate and display device |
-
2020
- 2020-03-24 CN CN202010213690.4A patent/CN111540761A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112185949A (en) * | 2020-12-03 | 2021-01-05 | 浙江清华柔性电子技术研究院 | Mini/Micro LED display panel, manufacturing method thereof and display device |
| CN112185949B (en) * | 2020-12-03 | 2021-08-10 | 浙江清华柔性电子技术研究院 | Mini/Micro LED display panel, manufacturing method thereof and display device |
| CN113257983A (en) * | 2021-05-18 | 2021-08-13 | 京东方科技集团股份有限公司 | Display substrate and display device |
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