CN211226362U

CN211226362U - Insulation structure of polycrystalline silicon reduction furnace electrode

Info

Publication number: CN211226362U
Application number: CN201922169766.3U
Authority: CN
Inventors: 施光明; 李宇辰; 王琳; 郭光伟; 吉红平; 陈宏博; 何乃栋; 李亚昆; 李勇明; 曹得虎; 蒲泽军
Original assignee: Qinghai Asia Silicon Silicon Material Engineering Technology Co Ltd; Asia Silicon Qinghai Co Ltd
Current assignee: Qinghai Asia Silicon Silicon Material Engineering Technology Co Ltd; Asia Silicon Qinghai Co Ltd
Priority date: 2019-12-06
Filing date: 2019-12-06
Publication date: 2020-08-11
Anticipated expiration: 2029-12-06

Abstract

The utility model discloses an insulation structure of an electrode of a polysilicon reduction furnace, which comprises an electrode body, wherein the upper end of the electrode body is provided with an electrode tip, the lower end of the electrode body is provided with a power connection port, the outside of the electrode body is wrapped with an insulation component, the upper end of the insulation component is provided with an upper flange, the outside of the electrode head is wrapped with a fixed structure, a silicon core is inserted into the fixed structure, the outer side of the silicon core is sleeved with a gasket, the insulation component is inserted in the chassis of the reduction furnace, the lower end of the insulation component is provided with a threaded cap, the device adopts insulation materials to wrap and fuse the electrodes into a whole and is arranged in a hole reserved for arranging the electrodes on the chassis of the reduction furnace, then a silicon core fixing structure is arranged on the upper part of the exposed electrode head, and then a silicon core is further arranged to ensure that the silicon core is in good contact with the electrode, therefore, the accident that the reduction furnace breaks down the junction edge structure by a large amount of current in the operation process to cause furnace blowing due to faults can be ensured.

Description

Insulation structure of polycrystalline silicon reduction furnace electrode

Technical Field

The utility model relates to a polycrystalline silicon production technical field specifically is an insulation system of polycrystalline silicon reduction furnace electrode.

Background

Polycrystalline silicon reduction furnace electrode insulation system is along with the more mature of technology, and present electrode insulation system mainly installs on the chassis after putting the electrode cover on the insulating cover to can reach the insulating requirement on electrode and chassis, but this kind of insulating mode can cause the reduction furnace to produce ground connection blowing-out trouble because of the high temperature high current takes place electrode current breakdown insulating cover easily in the operation, in order to solve this problem, the utility model provides a polycrystalline silicon reduction furnace electrode insulation system. Therefore, an insulating structure of the electrode of the polycrystalline silicon reduction furnace is provided.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide an insulation system of polycrystalline silicon reduction furnace electrode to solve the problem that proposes among the above-mentioned background art.

In order to achieve the above object, the utility model provides a following technical scheme: the insulating structure of the electrode of the polycrystalline silicon reduction furnace comprises an electrode body, wherein an electrode tip is arranged at the upper end of the electrode body, a power receiving port is arranged at the lower end of the electrode body, an insulating assembly is wrapped outside the electrode body, an upper flange is arranged at the upper end of the insulating assembly, a fixing structure is wrapped outside the electrode tip, a silicon core is inserted into the fixing structure, a gasket is sleeved outside the silicon core, the insulating assembly is inserted into a chassis of the reduction furnace, and a threaded cap is arranged at the lower end of the insulating assembly.

Preferably, the radius of the bottom of the upper flange is larger than the radius of a socket arranged on the chassis of the reduction furnace.

Preferably, the lower end of the silicon core is contacted with the electrode head, and the radius of the silicon core is smaller than that of a silicon core socket arranged on the fixing structure.

Preferably, the upper flange and the insulation component are of an integral structure and made of the same material.

Preferably, the fixing structure stably falls on the electrode head, the fixing structure completely covers the upper end face of the electrode head, and a limiting hole is formed in the upper end face of the fixing structure and used for inserting the silicon core.

Preferably, the height of the insulation assembly is greater than that of the chassis of the reduction furnace.

Compared with the prior art, the beneficial effects of the utility model are that: the device adopts insulating materials to wrap and fuse the electrodes into a whole, the device is arranged in a hole reserved for installing the electrodes on a chassis of the reduction furnace, then a silicon core fixing structure is arranged on the upper part of the exposed electrode tip, and the silicon core is further arranged to ensure that the silicon core is in good contact with the electrodes, so that the accident that the reduction furnace breaks down and stops the furnace due to the fact that a large amount of current is reduced to puncture a junction structure in the operation process can be ensured.

Drawings

FIG. 1 is a schematic structural view of the present invention;

fig. 2 is a schematic diagram of the silicon core structure of the present invention.

In the figure: 1 reduction furnace chassis, 2 insulating assemblies, 21 threaded caps, 3 power connection ports, 4 upper flanges, 5 electrode heads, 6 silicon cores, 7 fixing structures, 71 gaskets and 8 electrode bodies.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-2, the present invention provides a technical solution: an insulation structure of an electrode of a polycrystalline silicon reduction furnace comprises an electrode body 8, wherein an electrode tip 5 is arranged at the upper end of the electrode body 8, a power connection port 3 is arranged at the lower end of the electrode body 8, an external electrifying device is enabled to be in better contact with the electrode body 8 through the power connection port 3, an insulation component 2 is wrapped outside the electrode body 8, the insulation component 2 can not only ensure that the electrode body 8 does not have electric leakage and influence the outside, but also play roles of corrosion resistance and abrasion resistance on the electrode body 8 and protect the electrode body 8, the insulation component 2 is made of high-temperature resistant materials made of RSB materials, an upper flange 4 is arranged at the upper end of the insulation component 2, the bottom radius of the upper flange 4 is larger than the inserting opening radius arranged on a reduction furnace chassis 1, the upper flange 4 can ensure that the insulation component 2 and the electrode body 8 can slide down due to the fact that the friction force does not reach the, the materials used are the same, the fixing structure 7 is wrapped outside the electrode head 5, the silicon core 6 is inserted into the fixing structure 7, the lower end of the silicon core 6 is in contact with the electrode head 5, the radius of the silicon core 6 is smaller than that of the socket of the silicon core 6 arranged on the fixing structure 7, the gasket 71 is sleeved outside the silicon core 6, the friction force between the silicon core 6 and the fixing structure 7 can be enhanced through the gasket 71, the silicon core 6 is effectively prevented from falling off, the silicon powder falling off and the like can be prevented through the gasket 71, the quality of the polycrystalline silicon can be effectively improved, the insulating assembly 2 is inserted into the reducing furnace chassis 1, the lower end of the insulating assembly 2 is provided with the threaded cap 21, the insulating assembly 2 and the electrode body 8 are fixed in the reducing furnace chassis 1 through the threaded cap 21 and the upper flange 4, the electrode body 8 and the insulating assembly 2 are integrated and are installed in the reducing furnace chassis 1 which is inosculated and sealed, the fixing structure 7 is arranged on the upper portion of the electrode tip 5, the fixing structure 7 covers the upper end face of the electrode tip 5 completely, a limiting hole is formed in the upper end face of the fixing structure 7 and used for inserting the silicon core 6, fault furnace shutdown caused by discharge breakdown of the electrode tip 5 can be effectively avoided through the fixing structure 7 and the silicon core 6 inserting mode, the height of the insulating assembly 2 is larger than that of the reducing furnace chassis 1, and the threaded cap 21 can be screwed at the lower end of the insulating assembly 2, so that the insulating assembly 2 and the electrode body 8 are reinforced.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. An insulation structure of polycrystalline silicon reduction furnace electrode, includes electrode body (8), its characterized in that: the improved structure of the silicon chip reduction furnace is characterized in that an electrode tip (5) is arranged at the upper end of the electrode body (8), a power receiving port (3) is installed at the lower end of the electrode body (8), an insulating assembly (2) is wrapped outside the electrode body (8), an upper flange (4) is arranged at the upper end of the insulating assembly (2), a fixing structure (7) is wrapped outside the electrode tip (5), a silicon chip (6) is inserted into the fixing structure (7), a gasket (71) is sleeved outside the silicon chip (6), the insulating assembly (2) is inserted into the reduction furnace chassis (1), and a threaded cap (21) is arranged at the lower end of the insulating assembly (2).

2. The insulation structure of the electrode of the polycrystalline silicon reduction furnace according to claim 1, characterized in that: the bottom radius of the upper flange (4) is larger than the socket radius arranged on the reduction furnace chassis (1).

3. The insulation structure of the electrode of the polycrystalline silicon reduction furnace according to claim 1, characterized in that: the lower end of the silicon core (6) is contacted with the electrode head (5), and the radius of the silicon core (6) is smaller than that of the socket of the silicon core (6) arranged on the fixed structure (7).

4. The insulation structure of the electrode of the polycrystalline silicon reduction furnace according to claim 1, characterized in that: the upper flange (4) and the insulating component (2) are of an integrated structure.

5. The insulation structure of the electrode of the polycrystalline silicon reduction furnace according to claim 1, characterized in that: the fixing structure (7) stably falls on the electrode tip (5), the fixing structure (7) completely covers the upper end face of the electrode tip (5), and a limiting hole is formed in the upper end face of the fixing structure (7) and used for inserting the silicon core (6).

6. The insulation structure of the electrode of the polycrystalline silicon reduction furnace according to claim 1, characterized in that: the height of the insulating component (2) is greater than that of the reduction furnace chassis (1).