CN211208478U - L ED filament and lighting device - Google Patents
L ED filament and lighting device Download PDFInfo
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- CN211208478U CN211208478U CN201922168685.1U CN201922168685U CN211208478U CN 211208478 U CN211208478 U CN 211208478U CN 201922168685 U CN201922168685 U CN 201922168685U CN 211208478 U CN211208478 U CN 211208478U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The application discloses an L ED filament and a lighting device, the L ED filament comprises a circuit support, electrode contacts and a chip set, wherein the electrode contacts comprise a first electrode contact and a second electrode contact, the first electrode contact and the second electrode contact are respectively arranged at two ends of the circuit support, the chip set is arranged on the circuit support and is connected to the first electrode contact and the second electrode contact through bonding wires, the chip set comprises at least two first chip sets which are connected in series or in parallel, and the first chip set comprises chips.
Description
Technical Field
The application relates to the technical field of L ED, in particular to a L ED filament and a lighting device.
Background
With the continuous development of L ED, the research on L ED filament has gradually progressed to a breakthrough, wherein the power driving mode adopted by L ED filament is usually high voltage driving to replace the traditional incandescent lamp.
The conventional incandescent lamp has a narrow application range, and since the conventional filament generally uses a full-series die bonding wire method, the conventional filament is limited by the length of the support and the wire bonding process, so that each support has a minimum and maximum die bonding amount, and thus, the conventional filament cannot realize lower voltage and can be applied to different power supply drives.
SUMMERY OF THE UTILITY MODEL
The technical problem that this application mainly solved provides an L ED filament and lighting device to can realize different low-voltage drive, thereby use on different power drive, and make its scope that can use broader.
In order to solve the technical problem, one technical scheme adopted by the application is to provide an L ED filament and a lighting device, wherein the L ED filament comprises a circuit support, electrode contacts and a chipset, the electrode contacts comprise a first electrode contact and a second electrode contact, the first electrode contact and the second electrode contact are respectively arranged at two ends of the circuit support, the chipset is arranged on the circuit support and is connected to the first electrode contact and the second electrode contact through bonding wires, and the chipset comprises a plurality of chips.
The two sides of the circuit support are provided with a first lead and a second lead which are parallel to each other; the first end of the first chip group is connected to the first lead through a bonding wire, the second end of the first chip group is connected to the second lead through a bonding wire, and the first lead and the second lead are respectively connected to the first electrode contact and the second electrode contact through the bonding wire.
The first chip group comprises at least two chips which are connected in series.
The chips in the chip set are parallel to each other, the first ends of the chips face the direction of the first electrode contact piece, the second ends of the chips face the direction of the second electrode contact piece, and the chips are arranged on the circuit support at equal intervals.
The circuit support is provided with a first electrode contact piece, a second electrode contact piece, a first high-voltage chip, a second high-voltage chip, a first resistor, a second resistor, a first high-voltage chip and a second high-voltage chip, wherein the first resistor and the second resistor are respectively arranged at positions, close to the first electrode contact piece and the second electrode contact piece, on the circuit support; wherein, first resistance and second resistance connect in series respectively in first lead wire and second lead wire to be connected to first high-voltage chip and second high-voltage chip respectively, first high-voltage chip and second high-voltage chip are connected to first electrode contact and second electrode contact respectively again.
The chip set comprises at least two first chip sets which are connected in parallel, each first chip set comprises a chip, and the first end of each chip is connected to the first electrode contact through the welding; the second end of each chip is connected to the second electrode contact by a bonding wire.
The chipset comprises at least two first chipsets which are connected in series, each first chipset comprises at least two chips which are connected in parallel, the first end of one first chipset close to the first electrode contact in the chipset is connected to the first electrode contact through a bonding wire, and the second end of one first chipset close to the second electrode contact in the chipset is connected to the second electrode contact through a bonding wire.
The chips in the chip group are parallel to each other, the first ends of the chips face one side of the circuit support, the second ends of the chips face the other side of the circuit support, and the chips are arranged on the circuit support at equal intervals.
Wherein, the circuit support is a ceramic circuit support or a glass circuit support.
In order to solve the above technical problem, the present application adopts a further technical solution of providing a lighting device, wherein the lighting device includes the L ED filament as described in any one of the above.
According to the L ED filament, different low-voltage driving can be realized by arranging a set number of chips into different series and parallel-parallel structures, so that the L ED filament can be applied to different power supply driving and has a wider application range.
Drawings
Fig. 1 is a schematic structural view of a first embodiment of the L ED filament of the present application;
fig. 2 is a schematic structural view of a second embodiment of the L ED filament of the present application;
fig. 3 is a schematic structural view of a third embodiment of the L ED filament of the present application;
fig. 4 is a schematic structural view of a fourth embodiment of the L ED filament of the present application;
fig. 5 is a schematic structural view of a fifth embodiment of the L ED filament of the present application;
fig. 6 is a schematic structural diagram of a sixth embodiment of the L ED filament of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a first embodiment of an L ED filament of the present application, in this embodiment, a L ED filament includes a wire holder 10, an electrode contact 20, a chip set 30, and a bonding wire 40.
Wherein, the electrode pads 20 further include a first electrode pad 210 and a second electrode pad 220, and the first electrode pad 210 and the second electrode pad 220 are respectively disposed at both ends of the line bracket 10 for connecting both ends of an external power source.
The circuit support can be a ceramic circuit support or a glass circuit support, and the application does not limit the circuit support.
The chipset 30 is disposed on the circuit frame 10, and the positive and negative electrodes thereof are respectively connected to the first electrode contact 210 and the second electrode contact 220 through the bonding wires 40. The chipset 30 comprises 4 first chipset 310 connected in parallel, and each of the first chipset 310 further comprises a chip 3110 and a chip 3120.
It can be understood that, the chipset 30 may arrange and fix a set number of chips on the circuit support 10 by die bonding and wire bonding, so that after the set number of chips are arranged, the serial-parallel relationship of each chip in the chipset 30 is adjusted by adjusting the setting mode of the corresponding bonding wire, thereby being capable of matching with different driving voltages.
Optionally, the chipset 30 may further divide each set number of chips connected in series into groups as needed to obtain at least two first chip groups 310, where each first chip group 310 may be connected in parallel, and the first chip group 310 may further include at least two chips connected in series, and in other embodiments, the first chip group 310 may also include only one chip, which is not limited in this application.
Alternatively, when the number of chips arranged on the circuit support 10 is set to be 8, that is, the total number of chips included in the chipset 30 is 8, each of the chips may be connected in parallel to the first electrode contact 210 and the second electrode contact 220 by correspondingly setting the bonding wires 40, so as to be externally connected to two ends of a low voltage power supply, and accordingly, the output voltage of the power supply is 3V; when every two adjacent chips in the 8 chips are connected in series, and the chip groups formed after the serial connection are further connected in parallel, to be connected to the first electrode contact 210 and the second electrode contact 220, as shown in fig. 1, every two chips 3110 and chip 3120 are constructed as a first chip group 310, each of the first chip sets 310 is connected in parallel to form the chip set 30, and is connected to the first electrode contact 210 and the second electrode contact 220, respectively, so that the output voltage of the corresponding driving power source is 6V, in other embodiments, the total number of chips included in the chipset 30 may be other numbers, that is, the first chipset 310 included in the chipset 30 may also be other numbers, but if the first chip groups 310 each include 2 chips 3110 and 3120 connected in series with each other, the output voltage of the corresponding driving power supply is still 6V, which is not limited in this application. The corresponding external power source may be a dc low voltage power source or an ac low voltage power source, and supplies power to the corresponding chipset 310 through the first electrode contact 210, the second electrode contact 220 and the set bonding wire 40.
Optionally, the two sides of the circuit support 10 are further provided with a first lead 510 and a second lead 520 parallel to each other, and accordingly, the chip set 30 includes 4 first chip sets 310 parallel to each other, wherein a first end of the first chip set 310 can be connected to the second lead 520 through a bonding wire 40, and a second end of the first chip set 310 can be connected to the first lead 510 through a bonding wire, so that the second lead 520 and the first lead 510 are further connected to the first electrode contact 210 and the second electrode contact 220 through a bonding wire 40, respectively.
Optionally, each chip in the chipset 30 is first arranged in parallel on the circuit support 10 at equal intervals, so as to further set the serial-parallel relationship of each chip as required, thereby completing the corresponding wire bonding process. The positive second ends of each chip in the chipset 30 face the same direction, and the first ends face the direction of the first electrode contact 210, and the second ends face the direction of the second electrode contact 220, which are horizontally arranged, so as to reduce the difficulty of completing the corresponding bonding wires.
Different from the prior art, the L ED filament comprises a circuit support, electrode contacts and a chip set, wherein the electrode contacts comprise a first electrode contact and a second electrode contact, the first electrode contact and the second electrode contact are respectively arranged at two ends of the circuit support, the chip set is arranged on the circuit support and is connected to the first electrode contact and the second electrode contact through bonding wires, the chip set comprises at least two first chip sets which are connected in series or in parallel, and the first chip set comprises chips.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a second embodiment of the present application, it can be understood that the L ED filament in the present embodiment is different from the L ED filament in the first embodiment of the present application in fig. 1 in that the first chip set 310 includes 1 number of chips.
The chipset 30 includes 3 first chipset 310 connected in parallel, and each of the first chipset 310 includes only 1 chip, that is, each chip included in the chipset 30 is connected in parallel, at this time, the voltage of the driving power source matched with the chip is 3V, in other embodiments, the first chipset 310 included in the chipset 30, that is, the total number of the included chips may also be other numbers, and each of the first chipset 310, that is, the chips are connected in parallel, at this time, the voltage of the driving power source matched with the chip is still 3V, which is not limited in this application.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a third embodiment of the present application, it can be understood that the L ED filament in this embodiment is different from the L ED filament in the first embodiment of the present application in fig. 1 in that the first chip set 310 includes 4 chips.
The chipset 30 includes 2 first chipset 310 connected in parallel, and each first chipset 310 further includes 4 chips 3110, 3120, 3130 and 3140 connected in series, so that the voltage of the driving power source matched therewith is 12V.
It is understood that, in the present embodiment, the voltage of the driving power source corresponding to the chip set 30 in the L ED filament is matched with the number of chips in series included in each first chip set 310 included in the driving power source, and the number of at least two first chip sets 310 in parallel connection with each other included in the chip set 30 does not affect the voltage of the corresponding driving power source.
When the number of chips in series connection in the first chip set 310 is n (n is a positive integer greater than 1), the voltage of the corresponding driving power source is 3 nV., for example, when the number of chips in series connection in the first chip set 310 in parallel connection in the chip set 30 is 2, and the number of chips in series connection in the first chip set 310 is 12, the voltage of the corresponding driving power source is 36V, and when the number of chips in series connection in the first chip set 310 in parallel connection in the chip set 30 is 4, and the number of chips in series connection in the first chip set 310 is 5, the voltage of the corresponding driving power source is 15V.
The driving voltage that can be realized by the chipset 30 is determined by the upper limit value of the number of chips that can be accommodated on the circuit support 10 and the corresponding serial-parallel relationship of each chip, the range of the driving voltage that can be realized can be 3V-150V, so as to be able to apply a driving power supply scheme covering low voltage and high voltage, and the low voltage part can also be driven by a battery, and the conventional die bonding wire bonding process does not need to be changed, so that the production yield and efficiency are high.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a fourth embodiment of the present application, it can be understood that the L ED filament in this embodiment is different from the L ED filament in the first embodiment of the present application in fig. 1 in that the L ED filament further includes a first resistor 610 and a second resistor 620, and a first high voltage chip 710 and a second high voltage chip 720.
The first resistor 610 and the second resistor 620, and the first high-voltage chip 710 and the second high-voltage chip 720 are respectively disposed on the circuit carrier 10 at positions close to the first electrode contact 210 and the second electrode contact 220.
The first resistor 610 and the second resistor 620 are respectively connected in series to the first lead 510 and the second lead 520, and further connected to the first high voltage chip 710 and the second high voltage chip 720, respectively, and divide the first lead 510 and the second lead 520 into 4 parts to separate the parts of the first lead 510 and the second lead 520 connected to the chips from the parts connected to the first high voltage chip 710 and the second high voltage chip 720, and the first high voltage chip 710 and the second high voltage chip 720 are connected to the first electrode pad 210 and the second electrode pad 220, respectively.
It can be understood that, in the present embodiment, by respectively connecting a high-voltage chip capable of resisting reverse withstand voltage and withstanding operating voltage and a corresponding resistor in series between the first electrode contact 210 and the second electrode contact 220 connected to the chipset 30, a current-stabilizing and voltage-stabilizing effect can be achieved when the chipset 30 is turned on in the forward direction and turned off in the reverse direction, so as to effectively avoid possible faults of the L ED filament during overcurrent and overvoltage, thereby improving the usability of the L ED filament.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a fifth embodiment of the present application, it can be understood that the L ED filament of the present embodiment is different from the L ED filament of the first embodiment of the present application in fig. 1 in that the chip set 30 includes 1 first chip set 310, and the first chip set 310 further includes 5 chips 3110, 3120, 3130, 3140 and 3150 connected in parallel with each other, and the L ED filament does not include the first lead 510 and the second lead 520.
After the chip 3110, the chip 3120, the chip 3130, the chip 3140, and the chip 3150 are connected in parallel, the chips are further connected to the first electrode contact 210 and the second electrode contact 220, and at this time, the voltage of the driving power source matched with the chips is 3V.
Each chip in the chipset 310 is parallel to each other, and the positive electrode of each chip faces one side of the circuit support 10, and the negative electrode of each chip faces the other side of the circuit support 10, and the chips are arranged on the circuit support 10 at equal intervals.
Referring to fig. 6, fig. 6 is a schematic structural diagram of a sixth embodiment of the present application, it can be understood that the L ED filament of the present embodiment is different from the L ED filament of the fifth embodiment of the present application in fig. 5 in that the chipset 30 includes 2 first chipset 310 connected in series, and each first chipset 310 further includes 3 chips 3110, 3120 and 3130 connected in parallel.
After the 2 first chip sets 310 included in the chip set 30 are connected in series, they are further connected to the first electrode contact 210 and the second electrode contact 220 to be externally connected to a low voltage power supply, and at this time, the voltage of the driving power supply matched with the low voltage power supply is 6V.
It is understood that, in the present embodiment, the voltage value of the driving power source corresponding to the chip set 30 in the L ED filament is determined by the number of the first chip sets 310 connected in series, and the number of the at least two chips connected in parallel in the first chip set 30 does not affect the voltage of the corresponding driving power source.
When the number of the first chip groups 310 connected in series with each other included in the chip group 30 is m (m is a positive integer greater than 1), the voltage of the driving power source matched with the number of the first chip groups 310 is 3 mV., for example, when the number of the first chip groups 310 connected in series with each other included in the chip group 30 is 11, and the number of the chips connected in parallel with each other included in the first chip group 310 is 2, the voltage of the corresponding driving power source is 33V, and when the number of the first chip groups 310 connected in series with each other included in the chip group 30 is 8, and the number of the chips connected in parallel with each other included in the first chip group 310 is 3, the voltage of the corresponding driving power source is 24V.
Based on the general inventive concept, there is also provided a lighting device, wherein the lighting device comprises an L ED filament as described in any of the above.
Different from the prior art, the L ED filament comprises a circuit support, electrode contacts and a chipset, wherein the electrode contacts comprise a first electrode contact and a second electrode contact which are respectively arranged at two ends of the circuit support, the chipset is arranged on the circuit support and is connected to the first electrode contact and the second electrode contact through bonding wires, the chipset comprises at least two first chipsets which are connected in series or in parallel, and the first chipset comprises at least one chip.
The above description is only an embodiment of the present application, and not intended to limit the scope of the present application, and all modifications that can be made by using equivalent structures or equivalent principles in the contents of the specification and the drawings or directly or indirectly applied to other related technical fields are also included in the scope of the present application.
Claims (10)
1. An L ED filament, wherein the L ED filament comprises:
a circuit support;
the electrode contact pieces comprise a first electrode contact piece and a second electrode contact piece, and the first electrode contact piece and the second electrode contact piece are respectively arranged at two ends of the circuit support;
the chip set is arranged on the circuit support and is connected to the first electrode contact and the second electrode contact through bonding wires, wherein the chip set comprises at least two first chip sets which are connected in series or in parallel, and each first chip set comprises at least one chip.
2. L ED filament according to claim 1,
a first lead and a second lead which are parallel to each other are arranged on two sides of the circuit support;
the chip set comprises at least two first chip sets which are connected in parallel, a first end of each first chip set is connected to the first lead through the bonding wire, a second end of each first chip set is connected to the second lead through the bonding wire, and the first lead and the second lead are respectively connected to the first electrode contact and the second electrode contact through the bonding wire.
3. L ED filament according to claim 2,
the first chip group comprises at least two chips which are connected in series.
4. L ED filament according to claim 3,
the plurality of chips in the chip set are parallel to each other, the first ends of the chips face the direction of the first electrode contact piece, the second ends of the chips face the direction of the second electrode contact piece, and the chips are arranged on the circuit support at equal intervals.
5. L ED filament according to claim 2,
a first resistor, a second resistor, a first high-voltage chip and a second high-voltage chip are respectively arranged at positions, close to the first electrode contact and the second electrode contact, on the circuit support;
the first resistor and the second resistor are connected in series to the first lead and the second lead respectively and connected to the first high-voltage chip and the second high-voltage chip respectively, and the first high-voltage chip and the second high-voltage chip are connected to the first electrode contact and the second electrode contact respectively.
6. L ED filament according to claim 1,
the chip set comprises at least two first chip sets which are connected in parallel, the first chip set comprises a chip, and the first end of each chip is connected to the first electrode contact sheet through the welding; the second end of each chip is connected to the second electrode contact by a bonding wire.
7. L ED filament according to claim 1,
the chip set comprises at least two first chip sets which are connected in series, the first chip set comprises at least two chips which are connected in parallel, the first end of the first chip set close to the first electrode contact is connected to the first electrode contact through the welding wire, and the second end of the first chip set close to the second electrode contact is connected to the second electrode contact through the welding wire.
8. L ED filament according to claim 6 or 7,
the chips in the chip group are all parallel to each other, the first end faces one side of the circuit support, the second end faces the other side of the circuit support, and the chips are arranged on the circuit support at equal intervals.
9. L ED filament according to claim 1,
the circuit support is a ceramic circuit support or a glass circuit support.
10. A lighting device, characterized in that it comprises an L ED filament according to any one of claims 1-9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922168685.1U CN211208478U (en) | 2019-12-06 | 2019-12-06 | L ED filament and lighting device |
| PCT/CN2020/071333 WO2021109320A1 (en) | 2019-12-06 | 2020-01-10 | Led filament and lighting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922168685.1U CN211208478U (en) | 2019-12-06 | 2019-12-06 | L ED filament and lighting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211208478U true CN211208478U (en) | 2020-08-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922168685.1U Active CN211208478U (en) | 2019-12-06 | 2019-12-06 | L ED filament and lighting device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN211208478U (en) |
| WO (1) | WO2021109320A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170012182A1 (en) * | 2015-07-09 | 2017-01-12 | Dun-Hua Cao | White Light LED Filament Having Blue Light Emitting Units and a Strip-Shaped Fluorescent Wafer |
| DE102016206316A1 (en) * | 2016-04-14 | 2017-10-19 | Ledvance Gmbh | Illuminant with at least one LED |
| CN207250564U (en) * | 2017-09-07 | 2018-04-17 | 李立新 | A kind of LED filament |
| CN209012822U (en) * | 2018-10-16 | 2019-06-21 | 深圳市国维茗科技有限公司 | LED filament bracket |
| CN109686728A (en) * | 2018-12-28 | 2019-04-26 | 苏州工业园区客临和鑫电器有限公司 | A kind of no substrate package flexibility filament and its packaging method |
-
2019
- 2019-12-06 CN CN201922168685.1U patent/CN211208478U/en active Active
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2020
- 2020-01-10 WO PCT/CN2020/071333 patent/WO2021109320A1/en active Application Filing
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| WO2021109320A1 (en) | 2021-06-10 |
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