CN211205179U - Device for rapidly and nondestructively detecting cobalt removal depth of polycrystalline diamond compact - Google Patents
Device for rapidly and nondestructively detecting cobalt removal depth of polycrystalline diamond compact Download PDFInfo
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- CN211205179U CN211205179U CN201920802426.7U CN201920802426U CN211205179U CN 211205179 U CN211205179 U CN 211205179U CN 201920802426 U CN201920802426 U CN 201920802426U CN 211205179 U CN211205179 U CN 211205179U
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Abstract
The utility model discloses a device of quick nondestructive test polycrystalline diamond compact's cobalt degree of depth that takes off, the device comprises test probe, probe drive circuit, probe signal detection circuit, two way direct digital signal synthesizer, analog-to-digital converter, computer, input keyboard, display. The device is used for measuring the cobalt removal depth of the cobalt-removal polycrystalline diamond compact; when the probe works, the probe is tightly pressed on the surface of the composite sheet, and the insulated cobalt-removing layer enables a cobalt-removing layer capacitor to be formed between the probe electrode and the composite sheet; the utility model discloses a to the measurement of the alternating current signal of flow through the probe, obtain the numerical value of cobalt layer electric capacity of taking off, and then obtain the data of cobalt layer thickness of taking off. The utility model discloses can be fast, can nondestructively measure polycrystalline diamond compact's the cobalt degree of depth that takes off, be convenient for carry out online quality control in batch production, improve the product quality and the yield of taking off cobalt polycrystalline diamond compact.
Description
Technical Field
The utility model relates to a detection in the superhard materials instrument production process especially relates to a device of quick nondestructive test polycrystalline diamond compact decobalt degree of depth.
Background
The polycrystalline diamond compact consists of a polycrystalline diamond layer and a hard alloy substrate. The wear-resistant rubber has good wear resistance and high impact resistance, so that the rubber is widely applied to the fields of oil drilling, geological exploration, mechanical processing and the like. Generally, the polycrystalline diamond layer is formed by sintering diamond micro powder and metal cobalt powder at high temperature and high pressure. During high-temperature and high-pressure sintering, D-D bonds are formed among the diamond micro-particles under the action of a cobalt catalyst, so that the diamond micro-powder is converted into large polycrystalline diamond. However, since graphite is a more stable elemental carbon state than diamond under atmospheric pressure conditions, during use of polycrystalline diamond tools, the processing heat may convert the diamond to graphite, causing the tool to fail. The presence of cobalt catalysts can dramatically accelerate this process, resulting in a decrease in thermal stability and wear resistance of polycrystalline diamond tools. Aiming at the phenomenon, an important method for improving the wear resistance of the polycrystalline diamond tool is as follows: introducing a composite sheet cobalt removal technology, and removing a cobalt phase in the composite sheet by utilizing an electrolytic method or a strong acid impregnation method. The decobalting depth is a key index in the technology, and how to quickly detect the decobalting depth of the composite sheet is a difficult point.
Two methods are commonly used for detecting cobalt removal at present: firstly, detecting the section of the polycrystalline diamond by using a scanning electron microscope or a microscope and the like; second, the decobalting depth is measured using X-ray transmission imaging. The cobalt removal depth of the polycrystalline diamond compact is observed by using an optical or scanning electron microscope, the compact needs to be damaged to expose the cross section, the cost is high, the efficiency is low, and only sampling inspection can be performed. The X-ray image is used for measuring the decobalting depth, the full inspection can be realized, but the precision is lower, the purchase and use cost of the equipment is higher, and the popularization is difficult in the actual production.
SUMMERY OF THE UTILITY MODEL
For solving above-mentioned technical problem, the device of the measurement polycrystalline diamond compact cobalt removal degree of depth that discloses in this patent need not do destructive cutting to the sample, is applicable to the shallow all kinds of samples that take off the cobalt and take off the cobalt deeply, and it has advantages such as low cost, high accuracy and portable, is applied to quality monitoring and product test in polycrystalline diamond compact's the cobalt removal flow, can show reduction in production cost, improvement product quality and production efficiency.
The utility model adopts the technical proposal that: a device for rapidly and nondestructively detecting the cobalt removal depth of a polycrystalline diamond compact comprises:
the test probe is directly contacted with the surface of the cobalt-removed polycrystalline diamond compact;
a probe driving circuit for injecting an alternating current into the test probe;
the probe signal detection circuit is used for detecting the alternating voltage signal of the test point in the test probe;
a direct digital signal synthesizer for providing an alternating current signal source for the probe driving circuit;
the analog-to-digital converter is used for converting an analog output signal of the probe signal detection circuit into a digital signal;
a direct digital signal synthesizer for providing a reference signal for the probe signal detection circuit;
a computer for providing digital signals and control signals for the two direct digital signal synthesizers, providing control signals for the analog-to-digital converter, receiving the digital signals output by the analog-to-digital converter, calculating the capacitance value of the cobalt-removing layer according to the electric signals and calculating the thickness of the cobalt-removing layer according to the capacitance value of the cobalt-removing layer;
an input keyboard for operating the computer;
and the display is used for displaying the measuring process, the measuring result and the working state of the computer.
Furthermore, the test probe comprises a shell, a sampling resistor, an electrode, a signal input contact, a signal detection contact and a plurality of elastic connecting components; the resistance value of the sampling resistor is 50-10 k omega; the electrode can be made of pure copper, brass, bronze, aluminum or aluminum alloy and stainless steel materials; the lower surface of the electrode is a flat plane.
Furthermore, the probe driving circuit consists of a discrete triode or an integrated operational amplifier; the alternating current signal is input from a signal input joint of the probe, wherein the alternating current signal input from the signal input joint is a single-frequency sine wave, the effective voltage value U is 0.1V-10V, and the frequency f is 0.1MHz-10 MHz.
Furthermore, the probe signal detection circuit is provided with three input ports which are respectively connected to a signal test contact of the test probe, a probe signal input point and a first reference signal; the signal test joint is connected to a first input amplifier, and is respectively transmitted to a first analog multiplier and a second analog multiplier after being amplified and buffered; the first analog multiplier multiplies the output signal of the first input amplifier with the voltage of the input point of the probe signal; the first reference signal is a single-frequency sine wave, the voltage and the frequency of the first reference signal are the same as those of a signal input point of the probe, and the phase difference is 90 degrees; a second analog multiplier multiplying an output signal of the first input amplifier by the first reference signal; the outputs of the first analog multiplier and the second analog multiplier are respectively connected to the first low-pass filter and the second low-pass filter; the cut-off frequency of the first low-pass filter and the second low-pass filter is 10-100 Hz; the first output signal of the first low-pass filter is proportional to the effective value of the voltage U1, and is a component of the signal test contact point that is in phase with the input signal, and the proportionality coefficient is a known fixed value determined by the parameters of the first input amplifier, the first analog multiplier, and the first low-pass filter; the second output signal of the second low-pass filter is proportional to the effective value of the voltage U2, is a component of the signal test contact point with a phase difference of 90 degrees from the input signal, and the proportionality coefficient is a known fixed value determined by the parameters of the first input amplifier, the second analog multiplier and the second low-pass filter; the amplifier, the analog multiplier and the filter in the probe signal detection circuit can be built by using discrete triodes, integrated operational amplifiers or a combination thereof.
Furthermore, the probe signal detection circuit is provided with three input ports which are respectively connected to a signal test contact of the test probe, a probe signal input point, a second reference signal and a control signal; the output of the probe test joint is amplified and buffered by a second input amplifier and then input into a third analog multiplier; the other input point of the third analog multiplier is controlled by the multiplexer and is respectively connected with the signal test contact and the second reference signal according to the selection of the control signal; the second reference signal is a single frequency sine wave that is the same voltage, the same frequency, and 90 ° out of phase with the signal at the signal test contact. The control signal is sent out by the computer; the output of the third analog multiplier is connected to a third low-pass filter; the cut-off frequency of the third low-pass filter is 10-100 Hz; when the control signal drives the multiplexer to connect the third analog multiplier to the signal test contact, the third output signal of the low-pass filter is proportional to the effective value of the voltage U1, which is the component of the signal test contact in phase with the input signal, and the proportionality coefficient is a known fixed value determined by the parameters of the second input amplifier, the third analog multiplier, and the third low-pass filter; when the control signal drives the multiplexer to connect the third analog multiplier with the second reference signal, the third output signal of the third low-pass filter is proportional to the effective value of the voltage U2, which is a component on the signal test contact point with a phase difference of 90 degrees with the input signal, and the proportionality coefficient is a known fixed value determined by the parameters of the second input amplifier, the third analog multiplier and the third low-pass filter; the amplifier, the analog multiplier and the filter in the probe signal detection circuit can be built by discrete triodes, integrated operational amplifiers or a combination thereof; the multiplexer in the probe signal detection circuit can be built by using a relay or a semiconductor integrated multiplexing switching element.
Furthermore, the probe signal detection circuit comprises at least one group of amplifying circuits, and a voltage signal of a probe signal input point is input to the inverting input end of the first operational amplifier; the two resistors form a voltage division feedback network; the voltage of the output signal of the first operational amplifier is in direct proportion to the voltage at the signal input point of the probe, and the proportionality coefficient is determined by the numerical values of the two resistors; the input impedance of the first operational amplifier is greater than 100M omega; the unit gain bandwidth of the amplifying circuit is more than 10 MHz; the first operational amplifier uses a field effect input to ensure a high input impedance.
Furthermore, the probe signal detection circuit comprises at least one group of analog multiplier circuits; the analog multiplier adopts an AD734 analog multiplier; the AD735 has two input terminals and pin 1 and pin 6, respectively, and the voltage at the output terminal is proportional to the product of the voltages at the two input terminals.
Furthermore, the probe signal detection circuit comprises at least one group of low-pass filter circuits; the input end of the low-pass filter is input to the second operational amplifier after passing through a filter network consisting of two resistors and two capacitors.
Furthermore, a direct digital signal synthesizer is provided for generating a first reference signal or a second reference signal required by the probe signal detection circuit; the output voltage signal is a single-frequency sine wave, and the output voltage and frequency are the same as the voltage U and the frequency f applied to the signal input point of the probe; the signal it outputs is 90 out of phase with the signal applied to the probe signal input point; the direct digital signal synthesizer may be comprised of commercially available DDS integrated circuits or of commercially available digital-to-analog converter integrated circuits, which are well known analog signal generation techniques.
Furthermore, the computer is used for setting a direct digital signal synthesizer to generate an alternating voltage signal with an effective value of U and a frequency of f, and outputting the alternating voltage signal to a probe signal input point on the test probe; the computer is used for setting the direct digital signal synthesizer to generate a first reference signal or a second reference signal which has the same voltage, the same frequency and the phase difference of 90 degrees with the signal voltage on the signal input point of the probe; the computer is used for receiving the digital signal output by the analog-to-digital converter, obtaining a component with the same phase position as the voltage on the signal input point of the probe on the signal test connection point, and obtaining a component with 90 degrees phase difference with the voltage on the signal input point of the probe on the signal test connection point, and obtaining a voltage effective value U2.
Drawings
FIG. 1 is a schematic frame diagram of the present invention;
FIG. 2 is a schematic view of a test probe configuration;
FIG. 3 is a schematic view of a test probe usage scenario;
FIG. 4 is an equivalent circuit diagram of a test probe usage scenario;
FIG. 5 is a schematic diagram of a probe signal detection circuit;
FIG. 6 is a schematic diagram of another probe signal detection circuit;
FIG. 7 is a schematic diagram of an input amplifier in the probe signal detection circuit;
FIG. 8 is a schematic diagram of a multiplier in the probe signal detection circuit;
FIG. 9 is a schematic diagram of a low pass filter in the probe signal detection circuit;
fig. 10 is a schematic diagram of an apparatus and an operation scene of the embodiment.
Detailed Description
The present invention will be further described with reference to the accompanying drawings.
As shown in fig. 1, the utility model comprises a test probe directly contacted with the surface of the cobalt-removed polycrystalline diamond compact; a probe driving circuit for injecting an alternating current into the test probe; the probe signal detection circuit is used for detecting the alternating voltage signal of the test point in the test probe; a direct digital signal synthesizer for providing an alternating current signal source for the probe driving circuit; the analog-to-digital converter is used for converting an analog output signal of the probe signal detection circuit into a digital signal; a direct digital signal synthesizer for providing a reference signal for the probe signal detection circuit; a computer for providing digital signals and control signals for the two direct digital signal synthesizers, providing control signals for the analog-to-digital converter, receiving the digital signals output by the analog-to-digital converter, calculating the capacitance value of the cobalt-removing layer according to the electric signals and calculating the thickness of the cobalt-removing layer according to the capacitance value of the cobalt-removing layer; an input keyboard for operating the computer; and the display is used for displaying the measuring process, the measuring result and the working state of the computer.
As shown in fig. 2, the test probe is composed of a housing 201, a sampling resistor Rs 202, an electrode 203, a probe signal input point 204, a signal test contact 205, a plurality of elastic connection components 206, a plurality of connection cables, a shielded cable connecting the probe and other parts of the device; the resistance value of the sampling resistor Rs 202 is 50-10 k omega; the electrode 203 can be made of pure copper, copper alloy such as brass and bronze, aluminum or aluminum alloy, stainless steel, and other conductive materials; the lower surface of the electrode 203 is a flat plane.
As shown in fig. 3, when the cobalt removal depth of the polycrystalline diamond compact is measured, the elastic connection assembly 206 contracts under pressure, the lower surface of the electrode 203 is in close contact with the upper surface of the cobalt-removal polycrystalline diamond compact, the contact pressure is 100Pa-10kPa, and the contact area is 10mm2-100mm2(ii) a The cobalt-removing layer 301 of the cobalt-removing polycrystalline diamond compact does not contain metal components and has good insulating property; the non-cobalt-removed layer 302 of the composite sheet has certain electrical conductivity; the cemented carbide substrate 303 of the composite sheet is a good conductor of electricity; when the test probe is in close contact with the surface of the composite sheet, the electrode 203, the cobalt-removed layer 301 and the non-cobalt-removed layer 302 form an equivalent capacitance.
As shown in fig. 4, when an ac signal is input from the probe signal input point 204, the ac current flows through the sampling resistor 202, the decobalting capacitor 401, and the non-decobalting resistor 402 in sequence, and is grounded from the hard alloy substrate 303 of the polycrystalline diamond compact; the test probe includes a signal test contact 205 to measure the voltage drop of the ac current flowing through the sampling resistor 202. The probe drive circuit inputs an alternating current signal from the probe signal input point 204. The alternating current signal input from the probe signal input point 204 is a single-frequency sine wave, the effective voltage value U can be 0.1V-10V, and the frequency f can be 0.1MHz-10 MHz; the probe driving circuit consists of discrete triodes, or integrated operational amplifiers and other elements; the direct digital signal synthesizer generates a given alternating current signal according to the digital signal output by the computer and outputs the alternating current signal to the probe amplifying circuit; the direct digital signal synthesizer may be composed of commercially available DDS integrated circuits or may be composed of commercially available digital-to-analog converter integrated circuits, and is a well-known analog signal generation technology.
The probe detection circuit includes a part of circuits for extracting a component U1 having the same phase as the input signal at the signal test pad 205; the probing detection circuit also includes a portion of circuitry to extract the component U2 at the signal test pad 205 that is 90 ° out of phase with the input signal.
As shown in fig. 5, the probe signal detection circuit may have three input ports connected to a signal test pad 205 of the test probe, a probe signal input pad 204, a first reference signal 501, respectively; the signal test contact 205 is connected to the first input amplifier 502, and after being amplified and buffered, the signal is respectively transmitted to the first analog multiplier 503 and the second analog multiplier 504; a first analog multiplier 503 multiplies the output signal of the first input amplifier 502 by the voltage of the probe signal input point 204; the first reference signal 501 is a single-frequency sine wave, and has the same voltage and frequency as the probe signal input point 204, and the phase difference is 90 degrees; the second analog multiplier 504 multiplies the output signal of the first input amplifier 502 by the first reference signal 501; the outputs of the first analog multiplier 503 and the second analog multiplier 504 are connected to a first low-pass filter 505 and a second low-pass filter 506, respectively; the cut-off frequency of the first low-pass filter 505 and the second low-pass filter 506 is 10-100 Hz; the first output signal 507 of the first low-pass filter 505 is proportional to the effective value of the voltage U1, and is a component of the signal at the signal test node 205 that is in phase with the input signal, and the proportionality coefficient is a fixed value determined by the parameters of the first input amplifier 502, the first analog multiplier 503, and the first low-pass filter 505; the second output signal 508 of the second low pass filter 506 is proportional to the effective value of the voltage U2, is a component of the signal at the signal test connection 205 that is 90 ° out of phase with the input signal, and has a proportionality coefficient that is a fixed, known value determined by the parameters of the first input amplifier 502, the second analog multiplier 504, and the second low pass filter 506; the amplifier, the analog multiplier and the filter in the probe signal detection circuit can be built by using discrete triodes, integrated operational amplifiers or the combination of the discrete triodes and the integrated operational amplifiers; the composition of amplifiers, analog multipliers, and filters is well known in the analog signal art.
As shown in fig. 6, the probe signal detection circuit has three input ports, which are respectively connected to the signal test contact 205 of the test probe, the probe signal input point 204, the second reference signal 601, and the control signal 602; the output of the probe test contact is amplified and buffered by the second input amplifier 603 and then input to the third analog multiplier 604; the other input point of the third analog multiplier 604 is controlled by the multiplexer 605, and is respectively connected with the signal test contact 205 and the second reference signal 601 according to the selection of the control signal 602; the second reference signal 601 is a single frequency sine wave that is the same voltage, the same frequency, and 90 ° out of phase with the signal at the signal test contact 205. The control signal 602 is sent by the computer; the output of the third analog multiplier 604 is connected to a third low pass filter 606; the cut-off frequency of the third low-pass filter 606 is 10-100 Hz; when the control signal 602 drives the multiplexer 605 to connect the third analog multiplier 604 with the signal test pad 205, the third output signal 607 of the low-pass filter is proportional to the effective value of the voltage U1, which is the component of the signal test pad 205 in phase with the input signal, and the proportionality coefficient is a known fixed value determined by the parameters of the second input amplifier 603, the third analog multiplier 604, and the third low-pass filter 606; when the control signal 602 drives the multiplexer 605 to connect the third analog multiplier 604 with the second reference signal 601, the third output signal 607 of the third low-pass filter 606 is proportional to the effective value of the voltage U2, and is a component of the signal test connection 205 that is 90 ° out of phase with the input signal, and the proportionality coefficient is a known fixed value determined by the parameters of the second input amplifier 603, the third analog multiplier 604, and the third low-pass filter 606; the amplifier, the analog multiplier and the filter in the probe signal detection circuit can be built by using discrete triodes, integrated operational amplifiers or the combination of the discrete triodes and the integrated operational amplifiers; the multiplexer in the probe signal detection circuit can be built by using a relay or a semiconductor integrated multiplexing switch element; the composition of amplifiers, analog multipliers, filters, multiplexers is well known in the analog signal art.
The probe signal detection circuit of the utility model comprises at least one group of amplifying circuits, as shown in figure 7; the voltage signal of the probe signal input point 204 is input to the inverting input terminal of the first operational amplifier 701; resistors 703 and 704 form a voltage division feedback network; the voltage of the output signal of the first operational amplifier 701 is proportional to the voltage at the probe signal input point 204, and the proportionality coefficient is determined by the values of the resistors 703 and 704; the input impedance of the first operational amplifier 701 is greater than 100M Ω; the unit gain bandwidth of the amplifying circuit is more than 10 MHz; the first operational amplifier 701 employs a field effect input to ensure a high input impedance.
The probe signal detection circuit of the utility model comprises at least one group of analog multiplier circuits; the analog multiplier may employ a circuit as shown in fig. 8; the main components of the analog multiplier are an AD734 analog multiplier sold by analog devices inc (usa); pin 1 and pin 6 of AD735 are two input terminals 801 and 802, respectively, and the voltage at output terminal 803 is proportional to the product of the voltages of 801 and 802.
The probe signal detection circuit of the utility model comprises at least one group of low-pass filter circuits; as shown in fig. 9, an input terminal 901 of the low pass filter is input to a second operational amplifier 909 through a filter network formed by resistors 903 and 904 and capacitors 907 and 908; the cut-off frequency of the low-pass filter is determined by a filter network consisting of resistors 903 and 904 and capacitors 907 and 908; the gain of the low pass filter is determined by the feedback network consisting of resistors 905, 906.
The analog-to-digital converter in the utility model converts the U1 and U2 detected in the probe signal detection circuit into digital signals, and outputs the digital signals to a computer; the control signal of the analog-to-digital converter consists of a computer; the analog-to-digital converter can be composed of a commercially available analog-to-digital conversion chip or a commercially available voltmeter with a computer data interface.
The direct digital signal synthesizer of the present invention is used for generating a first reference signal 501 or a second reference signal 601 required by the probe signal detection circuit; the output voltage signal is a single frequency sine wave, and the voltage and frequency output by the probe is the same as the voltage U and the frequency f applied to the probe signal input point 204; the signal it outputs is 90 out of phase with the signal applied to the probe signal input point 204; the direct digital signal synthesizer may be composed of a commercially available DDS integrated circuit or a commercially available digital-to-analog converter integrated circuit, and is a well-known analog signal generation technology.
The utility model provides a device that quick nondestructive test takes off cobalt polycrystalline diamond compact and takes off cobalt degree of depth has two way direct digital signal synthesizer, their same group clock and synchronizing signal to guarantee mutual phase stability.
The computer in the utility model is used for setting a direct digital signal synthesizer to generate an alternating voltage signal with an effective value of U and a frequency of f, and the alternating voltage signal is output to a probe signal input point 204 on a test probe; the computer is used for setting the direct digital signal synthesizer to generate a first reference signal 501 or a second reference signal 601 which has the same voltage, the same frequency and the phase difference of 90 degrees with the signal voltage on the probe signal input point 204; the computer is used for receiving the digital signal output by the analog-to-digital converter, obtaining a component with the same phase of the voltage on the signal test contact 205 and the probe signal input point 204, and obtaining a voltage effective value U1 of the component, and obtaining a component with a phase difference of 90 degrees between the voltage on the signal test contact 205 and the probe signal input point 204, and obtaining a voltage effective value U2 of the component.
The computer in the utility model calculates the equivalent capacitance value C of the cobalt removing layer according to the equivalent circuit principle shown in figure 4 and the parameters; the calculation formula of the equivalent capacitance value of the cobalt removing layer is
Wherein Rs is the resistance of the sampling resistor, and is determined by the electrode area A and the vacuum dielectric constant ∈0Relative dielectric constant ∈ of diamondDThe filling factor q of the polycrystalline diamond and the capacitance value C of the cobalt-removing layer by using a formula
The thickness of the decobalted layer was calculated. The filling factor q is fixed for the same batch of samples in the same process, and can be obtained by sampling and cutting the polycrystalline diamond compact, observing the polycrystalline diamond compact under a microscope and calculating the cross-section porosity.
The following is an embodiment of the present invention.
The cobalt-removed depth measuring device and the working scene of the cobalt-removed polycrystalline diamond are shown in fig. 10. The polycrystalline diamond compacts tested were a 1613 size series of samples 15.88mm in diameter and 13.2mm thick. And (3) removing cobalt from the polycrystalline diamond compact by adopting a strong acid dipping method, wherein the cobalt removing period is 24 hours. Before testing, the sample surface was degreased, ultrasonically cleaned and dried. The test probe 1001 is pressed against the surface of the decobalted polycrystalline diamond compact 1002, bringing the electrode 1003 and the decobalted layer 1004 of decobalted polycrystalline diamond into intimate contact. The electrode 1003 had an effective area of 80mm2 polycrystalline diamond compact with the cemented carbide substrate 1006 grounded. The probe 1001 includes a sampling resistor, a probe driving circuit for generating a test signal, and a test signal detection circuit as shown in fig. 5. Two groups of alternating current signals with the same voltage, the same frequency and the phase difference of 90 degrees are respectively sent into the probe through the coaxial cable 1005 and the coaxial cable 1006 to be used as a test and reference signal source. The test signal and the reference signal are generated by a direct digital signal synthesizer 1009 and a direct digital signal synthesizer 1010, respectively. The component U1 in phase with the test signal and the component U2 out of phase with the test signal by 90 ° read by the signal detection circuit are sent to the multiplexer 1011 via the cable 1007 and the cable 1008, respectively, and are connected to the analog-to-digital converter 1012. A direct digital signal synthesizer 1009, a direct digital signal synthesizer 1010, an analog-to-digital converter 1012 and a computer 1014. The control and parameter input of the computer are performed through the input keyboard 1015, and the operation result and the operation state are displayed on the display 1013.
The sampling resistor Rs connected to the electrodes was 2000 Ω. The input voltage U is 10V and the frequency is 1 MHz. With the circuit shown in fig. 5, the voltage at the signal test pad 205 was measured to have a component 9.86V in phase with the input voltage and a component 1.11V out of phase by 90 ° with the input voltage. The same batch of cobalt-depleted polycrystalline diamond compacts was cut open and observed under a microscope to have a pore area of about 5% of the total area and a fill factor of 95%. According to the measurement results, the capacitance value of the cobalt removing layer is 8.9pF, and the cobalt removing depth of the sample is 430 μm.
Claims (10)
1. The utility model provides a device of quick nondestructive test polycrystalline diamond compact decobalt degree of depth which characterized in that includes:
the test probe is directly contacted with the surface of the cobalt-removed polycrystalline diamond compact;
a probe driving circuit for injecting an alternating current into the test probe;
the probe signal detection circuit is used for detecting the alternating voltage signal of the test point in the test probe;
a direct digital signal synthesizer for providing an alternating current signal source for the probe driving circuit;
the analog-to-digital converter is used for converting an analog output signal of the probe signal detection circuit into a digital signal;
a direct digital signal synthesizer for providing a reference signal for the probe signal detection circuit;
a computer for providing digital signals and control signals for the two direct digital signal synthesizers, providing control signals for the analog-to-digital converter, receiving the digital signals output by the analog-to-digital converter, calculating the capacitance value of the cobalt-removing layer according to the electric signals and calculating the thickness of the cobalt-removing layer according to the capacitance value of the cobalt-removing layer;
an input keyboard for operating the computer;
and the display is used for displaying the measuring process, the measuring result and the working state of the computer.
2. The device of claim 1, wherein the device is configured to rapidly and non-destructively detect a cobalt removal depth of a polycrystalline diamond compact, and further configured to: the test probe comprises a shell, a sampling resistor, an electrode, a signal input contact, a signal detection contact and a plurality of elastic connecting components; the resistance value of the sampling resistor is 50-10 k omega; the electrode is made of pure copper, brass, bronze, aluminum or aluminum alloy and stainless steel; the lower surface of the electrode is a flat plane.
3. The device of claim 1, wherein the device is configured to rapidly and non-destructively detect a cobalt removal depth of a polycrystalline diamond compact, and further configured to: the probe driving circuit consists of a discrete triode or an integrated operational amplifier; the alternating current signal is input from a signal input joint of the probe, wherein the alternating current signal input from the signal input joint is a single-frequency sine wave, the effective voltage value U is 0.1V-10V, and the frequency f is 0.1MHz-10 MHz.
4. The device of claim 1, wherein the device is configured to rapidly and non-destructively detect a cobalt removal depth of a polycrystalline diamond compact, and further configured to: the probe signal detection circuit is provided with three input ports which are respectively connected to a signal test contact (205) of a test probe, a probe signal input point (204) and a first reference signal (501); the signal test contact (205) is connected to a first input amplifier (502), and is amplified and buffered and then respectively transmitted to a first analog multiplier (503) and a second analog multiplier (504); a first analog multiplier (503) multiplies the output signal of the first input amplifier (502) with the voltage of the probe signal input point (204); the first reference signal (501) is a single-frequency sine wave, is the same as the voltage of the probe signal input point (204), has the same frequency, and has a phase difference of 90 degrees; a second analog multiplier (504) multiplies the output signal of the first input amplifier (502) with the first reference signal (501); the outputs of the first analog multiplier (503) and the second analog multiplier (504) are respectively connected to a first low-pass filter (505) and a second low-pass filter (506); the cut-off frequency of the first low-pass filter (505) and the second low-pass filter (506) is 10-100 Hz; the first output signal (507) of the first low pass filter (505), which is proportional to the effective value of the voltage U1, is a component of the signal at the signal test junction (205) that is in phase with the input signal, and the scaling factor is a fixed, known value determined by the parameters of the first input amplifier (502), the first analog multiplier (503), and the first low pass filter (505); the second output signal (508) of the second low pass filter (506), which is proportional to the effective value of the voltage U2, is a component of the signal at the signal test junction (205) that is 90 ° out of phase with the input signal, and the scaling factor is a fixed, known value determined by the parameters of the first input amplifier (502), the second analog multiplier (504), and the second low pass filter (506); the amplifier, the analog multiplier and the filter in the probe signal detection circuit can be built by using discrete triodes, integrated operational amplifiers or a combination thereof.
5. The device of claim 1, wherein the device is configured to rapidly and non-destructively detect a cobalt removal depth of a polycrystalline diamond compact, and further configured to: the probe signal detection circuit is provided with three input ports which are respectively connected to a signal test contact (205) of a test probe, a probe signal input point (204), a second reference signal (601) and a control signal (602); the output of the probe test joint is amplified and buffered by a second input amplifier (603) and then input into a third analog multiplier (604); the other input point of the third analog multiplier (604) is controlled by a multiplexer (605), and is respectively connected with the signal test contact (205) and the second reference signal (601) according to the selection of the control signal (602); the second reference signal (601) is a single-frequency sine wave, and has the same voltage, the same frequency and 90-degree phase difference with the signal on the signal test contact (205); the control signal (602) is sent by the computer; the output of the third analog multiplier (604) is connected to a third low pass filter (606); the cut-off frequency of the third low-pass filter (606) is 10-100 Hz; when the control signal (602) drives the multiplexer (605) and connects the third analog multiplier (604) to the signal test pad (205), the third output signal (607) of the low-pass filter is proportional to the effective value of the voltage U1, which is the component of the signal test pad (205) that is in phase with the input signal, and the scaling factor is a known fixed value determined by the parameters of the second input amplifier (603), the third analog multiplier (604), and the third low-pass filter (606); when the control signal (602) drives the multiplexer (605) and connects the third analog multiplier (604) with the second reference signal (601), the third output signal (607) of the third low-pass filter (606) is proportional to the effective value of the voltage U2, is a component on the signal test contact (205) which is 90 degrees out of phase with the input signal, and the proportionality coefficient is a known fixed value determined by the parameters of the second input amplifier (603), the third analog multiplier (604) and the third low-pass filter (606); the amplifier, the analog multiplier and the filter in the probe signal detection circuit can be built by discrete triodes, integrated operational amplifiers or a combination thereof; the multiplexer in the probe signal detection circuit can be built by using a relay or a semiconductor integrated multiplexing switching element.
6. The device of claim 1, wherein the device is configured to rapidly and non-destructively detect a cobalt removal depth of a polycrystalline diamond compact, and further configured to: the probe signal detection circuit comprises at least one group of amplifying circuits, and a voltage signal of a probe signal input point (204) is input to the inverting input end of a first operational amplifier (701); the resistors (703, 704) form a voltage division feedback network; the voltage of the output signal of the first operational amplifier (701) is proportional to the voltage at the probe signal input point (204), and the proportionality coefficient is determined by the values of the resistors (703, 704); the input impedance of the first operational amplifier (701) is greater than 100M Ω; the unit gain bandwidth of the amplifying circuit is more than 10 MHz; the first operational amplifier (701) uses a field effect input to ensure a high input impedance.
7. The device of claim 1, wherein the device is configured to rapidly and non-destructively detect a cobalt removal depth of a polycrystalline diamond compact, and further configured to: the probe signal detection circuit comprises at least one group of analog multiplier circuits; the analog multiplier adopts an AD734 analog multiplier; pin 1 and pin 6 of AD735 are two input terminals (801, 802), respectively, and the voltage at the output terminal (803) is proportional to the product of the voltages at the input terminals (801, 802).
8. The device of claim 1, wherein the device is configured to rapidly and non-destructively detect a cobalt removal depth of a polycrystalline diamond compact, and further configured to: the probe signal detection circuit comprises at least one group of low-pass filter circuits; the input end (901) of the low-pass filter is input to a second operational amplifier (909) after passing through a filter network consisting of resistors (903, 904) and capacitors (907, 908).
9. The device of claim 1, wherein the device is configured to rapidly and non-destructively detect a cobalt removal depth of a polycrystalline diamond compact, and further configured to: the direct digital signal synthesizer is used for generating a first reference signal (501) or a second reference signal (601) required by the probe signal detection circuit; the output voltage signal is a single-frequency sine wave, and the output voltage and frequency are the same as the voltage U and the frequency f applied to the probe signal input point (204); the signal it outputs is 90 out of phase with the signal applied to the probe signal input point (204); the direct digital signal synthesizer may be comprised of a commercially available DDS integrated circuit or a commercially available digital-to-analog converter integrated circuit.
10. The device of claim 1, wherein the device is configured to rapidly and non-destructively detect a cobalt removal depth of a polycrystalline diamond compact, and further configured to: the computer is used for setting the direct digital signal synthesizer to generate an alternating voltage signal with an effective value of U and a frequency of f, and outputting the alternating voltage signal to a probe signal input point (204) on the test probe; the computer is used for setting the direct digital signal synthesizer to generate a first reference signal (501) or a second reference signal (601) which has the same voltage, the same frequency and the phase difference of 90 degrees with the signal voltage on the signal input point (204) of the probe; the computer is used for receiving the digital signal output by the analog-to-digital converter, obtaining a component with the same phase of the voltage on the signal test joint (205) and the probe signal input point (204), and obtaining a voltage effective value U1, and obtaining a component with a phase difference of 90 degrees between the voltage on the signal test joint (205) and the probe signal input point (204), and obtaining a voltage effective value U2.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110220448A (en) * | 2019-05-30 | 2019-09-10 | 河南四方达超硬材料股份有限公司 | A kind of Fast nondestructive evaluation composite polycrystal-diamond takes off the device of cobalt depth |
| CN111963064A (en) * | 2020-08-27 | 2020-11-20 | 重庆北思卡新材料有限公司 | Cobalt-removing diamond drilling tooth and ultra-deep cobalt removing process thereof |
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2019
- 2019-05-30 CN CN201920802426.7U patent/CN211205179U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110220448A (en) * | 2019-05-30 | 2019-09-10 | 河南四方达超硬材料股份有限公司 | A kind of Fast nondestructive evaluation composite polycrystal-diamond takes off the device of cobalt depth |
| CN111963064A (en) * | 2020-08-27 | 2020-11-20 | 重庆北思卡新材料有限公司 | Cobalt-removing diamond drilling tooth and ultra-deep cobalt removing process thereof |
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