CN2111958U - Constant liquid level gas evaporator - Google Patents
Constant liquid level gas evaporator Download PDFInfo
- Publication number
- CN2111958U CN2111958U CN 92210101 CN92210101U CN2111958U CN 2111958 U CN2111958 U CN 2111958U CN 92210101 CN92210101 CN 92210101 CN 92210101 U CN92210101 U CN 92210101U CN 2111958 U CN2111958 U CN 2111958U
- Authority
- CN
- China
- Prior art keywords
- liquid
- liquid level
- pipeline
- constant liquid
- gas evaporator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000005260 corrosion Methods 0.000 claims abstract description 5
- 230000007797 corrosion Effects 0.000 claims abstract description 5
- 238000007789 sealing Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 239000006200 vaporizer Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 abstract description 31
- 238000000034 method Methods 0.000 abstract description 9
- 238000009835 boiling Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000001627 detrimental effect Effects 0.000 abstract 1
- 231100000331 toxic Toxicity 0.000 abstract 1
- 230000002588 toxic effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 239000007858 starting material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000007096 poisonous effect Effects 0.000 description 2
- 241000254032 Acrididae Species 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- -1 pottery etc. Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Images
Landscapes
- Filling Or Discharging Of Gas Storage Vessels (AREA)
Abstract
The utility model relates to a constant liquid level gas evaporator which is used in gas carrier methods and belongs to the technical field of chemical vapor deposition. The utility model is characterized in that the entire gas evaporator is made of corrosion-resistant material and achieves constant liquid level through a ball valve. The utility model which is a simple and practical constant liquid level gas evaporator is especially suitable for laboratories, scientific research, etc., and can be used for the fields of chemical industry, semiconductor material, etc. in preparing gases out of toxic and detrimental corrosive liquids with high boiling point.
Description
The utility model relates to the chemical vapour deposition technique field, has specifically just provided the gas evaporator that uses in a kind of gas carrier method, promptly a kind of constant level gas evaporator.
When using chemical vapor deposition method to prepare novel material, often high boiling point corrosive liquid raw material need be transformed into gaseous phase and use.Method commonly used is the gas carrier method, is about to current-carrying gas (hydrogen or other rare gas element) and feeds in the liquid starting material, and current-carrying gas is taken away the steam of liquid starting material, forms mixed gas.When making in this way and since along with liquid vapors by constantly the taking out of of current-carrying gas, the liquid in the container reduces and liquid level constantly descends, cause the concentration of the mixed gas of formation to change, cause the deposition quality heterogeneity, when liquid-consumed using up, whole technology will be ended in addition.Therefore, need remain the constant liquid level in technological process, the method for maintenance constant level commonly used is the electromagnetism grasshopper, but this device is complicated and be not suitable for poisonous, corrosive liquid.
The purpose of this utility model is, provides a kind of liquid level that can make to keep constant in guaranteeing finishing smoothly of whole technology, and the very simple again vaporizer that is easy to realize of whole device, promptly a kind of constant level gas evaporator.
The utility model is one to have the container that current-carrying gas enters pipeline and mixed gas outlet, it is characterized in that: have a liquid to replenish pipeline in the container in addition, replenishing has below the pipeline float-ball type valve to control automatically that liquid level remains on constant altitude in the vaporizer, whole device is by corrosion resistant material, make as glass, pottery etc., ball valve and liquid replenish the available ground of contact surface part of pipeline and realize sealing.Below in conjunction with accompanying drawing in detail one embodiment is described in detail.
Accompanying drawing 1 is a kind of constant level gas evaporator synoptic diagram.
Among the figure: 1, mixed gas outlet; 2, liquid replenishes pipeline; 3, current-carrying gas enters pipeline; 4, glass ground joint sealing surface; 5, seal bar; 6, cursory; 7, chemical corrosivity high boiling liquid.
Embodiment
The constant level gas evaporator of manufacturing for a kind of full glass as shown in Figure 1.It is up-thin-low-thick structure that liquid replenishes pipeline 2, and ball valve is then formed with seal bar 5 two portions by cursory 6, and seal bar 5 diameters replenish pipeline 2 thick mouths greater than thin mouthful less than liquid, and there is ground sealing surface 4 on the seal bar top.During use, cursory 6 are subjected to buoyancy upwards in liquid 7, making liquid replenish pipeline 2 contacts with the ground sealing surface 4 of seal bar 5, stoped the inflow of liquid in container, along with current-carrying gas enters constantly entering of pipeline 3 by gas, continuous discharge by pneumatic outlet 1, liquid level will descend, cursory 6 suffered buoyancy reduce, ground sealing surface 4 separates, and liquid is replenished in container by pipeline 2, when liquid level build-up arrives original position, to increase the continuation that ground trim 4 contact again stoped liquid additional because of cursory 6 buoyancy that are subjected to, and its liquid level remains unchanged all the time substantially.So not only the concentration of mixed gas can remain unchanged substantially, and has realized self-feeding, has guaranteed the continuity of technology.Simultaneously, because several means is all made by glass, not only device simply is easy to do, and is not afraid of corrosion, has solved the problem of using corrosive liquid.This device has prepared at chemical gaseous phase depositing process and obtains in the SlC fibre technology using, and the liquid starting material that uses is CH
3SlCl
3And CH
3SlHCl
2, the current-carrying gas of using is high-purity hydrogen or argon gas.Used this device solves mixed gas concentration change and the serialization problem of SlC fiber.
In a word, the utility model is a kind of easy, practical constant level gas evaporator, be specially adapted to occasions such as laboratory, scientific effort, can be widely used in fields such as chemical industry, semiconductor material, relate to the preparation high boiling point, the gas situation of poisonous and harmful corrosive liquid.
Claims (3)
1, a kind ofly have a constant level gas evaporator that current-carrying gas enters pipeline and mixed gas outlet, it is characterized in that:
(1) is provided with a liquid in the vaporizer in addition and replenishes pipeline;
(2) liquid replenishes and to be provided with a float-ball type valve below the pipeline, controls automatically that liquid level keeps constant in the vaporizer;
(3) whole device is made by corrosion resistant material.
By the described vaporizer of claim 1, it is characterized in that 2, the contact surface part that ball valve and liquid replenish pipeline can realize sealing with ground.
3, by claim 1,2 described vaporizers, it is characterized in that used corrosion resistant material can be glass or pottery etc.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 92210101 CN2111958U (en) | 1992-01-18 | 1992-01-18 | Constant liquid level gas evaporator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 92210101 CN2111958U (en) | 1992-01-18 | 1992-01-18 | Constant liquid level gas evaporator |
Publications (1)
Publication Number | Publication Date |
---|---|
CN2111958U true CN2111958U (en) | 1992-08-05 |
Family
ID=4955256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 92210101 Granted CN2111958U (en) | 1992-01-18 | 1992-01-18 | Constant liquid level gas evaporator |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN2111958U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104564253A (en) * | 2015-01-16 | 2015-04-29 | 曲纬庶 | Automobile emission purification treatment device |
-
1992
- 1992-01-18 CN CN 92210101 patent/CN2111958U/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104564253A (en) * | 2015-01-16 | 2015-04-29 | 曲纬庶 | Automobile emission purification treatment device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20120291696A1 (en) | Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor | |
US4992303A (en) | Chemical vapor deposition of cadmium mercury telluride | |
US5540777A (en) | Aluminum oxide LPCVD system | |
CN101878322A (en) | Plasma-deposited barrier coating including at least three layers, method for obtaining one such coating and container coated with same | |
US4844006A (en) | Apparatus to provide a vaporized reactant for chemical-vapor deposition | |
CN1753720A (en) | Method and system for supplying high purity fluid | |
US5431736A (en) | Method for transforming a liquid flow into a gas flow and a device for implementing the method | |
US3622369A (en) | Process for forming stoichiometric silicon carbide coatings and filaments | |
US5503657A (en) | Process for the separation of a gaseous hydride or a mixture of gaseous hydrides with the aid of a membrane | |
JPH01168331A (en) | Process for saturating organic metallic compound | |
EP1017109B1 (en) | Method of fabricating a film for solar cells | |
Tsang | Chemical beam epitaxy of InGaAs | |
Mircea et al. | Instrumental aspects of atmospheric pressure MOVPE growth of InP and InP: GaInAsP heterostructures | |
CN2111958U (en) | Constant liquid level gas evaporator | |
JPH0927455A (en) | Manufacture of semiconductor substrate and material gas supplying apparatus | |
JPH0963965A (en) | Organic metal feeding device and organic metal vapor growth device | |
CN206751918U (en) | A kind of device of thermal filament chemical vapor deposition of diamond film | |
US5098857A (en) | Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy | |
Seki et al. | Equilibrium Computation for the Vapor Growth of InxGa1-xP Crystals | |
CN213835530U (en) | Solid-state source bottle | |
CN211036099U (en) | Horizontal MOCVD system | |
CN1164436A (en) | Method for preparation of extra-thin palladium-ceramic compound film | |
US20010000030A1 (en) | Process and plant for the production of a gaseous mixture containing a carrier gas, an oxidizing gas and a silane | |
KR960013580B1 (en) | Purification process for dendritic web silicon crystal growth system | |
JP2648211B2 (en) | Preparation method of oxide thin film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |