CN211184597U - Graphene semiconductor with dustproof function - Google Patents

Graphene semiconductor with dustproof function Download PDF

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Publication number
CN211184597U
CN211184597U CN202020004028.3U CN202020004028U CN211184597U CN 211184597 U CN211184597 U CN 211184597U CN 202020004028 U CN202020004028 U CN 202020004028U CN 211184597 U CN211184597 U CN 211184597U
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China
Prior art keywords
dust cover
graphite alkene
shrouding
polar plate
hole
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CN202020004028.3U
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Chinese (zh)
Inventor
李珊
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Chongqing Yuhe Guoxing Technology Co.,Ltd.
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Henan Yuhe Graphene Application Technology Research Institute Co ltd
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Priority to CN202020004028.3U priority Critical patent/CN211184597U/en
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Abstract

The utility model discloses a graphite alkene semiconductor with dustproof function, including dust cover, graphite alkene semiconductor component, the dust cover front end passes through the joint and connects leading shrouding, square through hole has been seted up on leading shrouding surface, the built-in fixed shutter structure that is equipped with of square through hole, the rearmounted shrouding is connected through the joint to the dust cover rear end, circular through hole has been seted up on rearmounted shrouding surface, the built-in fan that is equipped with of circular through hole, the inside last fixed surface of dust cover installs the upper polar plate, the inside bottom surface fixed mounting of dust cover has the bottom plate, go up polar plate fixed connection graphite alkene semiconductor component, and go up polar plate and graphite alkene semiconductor component direct contact, go up surface connection wire on the polar plate, wire one end switch-on power. The utility model discloses can neutralize the negative charge on the graphite alkene semiconductor element, take out the dust cover from the uncharged dust through the fan, and the dust cover does not influence normal heat dissipation.

Description

Graphene semiconductor with dustproof function
Technical Field
The utility model relates to a graphite alkene semiconductor technology field specifically is a graphite alkene semiconductor with dustproof function.
Background
For the use of semiconductor devices, when the devices work, dust particles are adsorbed to the surfaces of the devices, so that the insulation resistance between the devices is reduced, and the work of the devices is seriously influenced. Accordingly, a graphene semiconductor having a dustproof function is provided to solve the problems in the related art.
Disclosure of Invention
An object of the utility model is to provide a graphite alkene semiconductor with dustproof function to solve the problem that proposes in the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme:
the utility model provides a graphite alkene semiconductor with dustproof function, including dust cover, graphite alkene semiconductor element, the leading shrouding is connected through the joint to the dust cover front end, square through hole has been seted up on leading shrouding surface, the built-in fixed shutter structure that is equipped with of square through hole, the rearmounted shrouding is connected through the joint to the dust cover rear end, circular through hole has been seted up on rearmounted shrouding surface, the built-in fan that is equipped with of circular through hole, the inside last fixed surface of dust cover installs the upper polar plate, the inside bottom surface fixed mounting of dust cover has the bottom plate, upper polar plate fixed connection graphite alkene semiconductor element, and upper polar plate and graphite alkene semiconductor element direct contact, go up polar plate upper surface connecting wire, wire one end switch-on power is anodal, the power negative pole passes through wire and bottom plate switch-on, and go up the direct switch.
As a further aspect of the present invention: the blades of the fixed louver structure are inclined downwards, and the dust cover influences the heat dissipation of the graphene semiconductor element, so that the fixed louver structure is arranged for dissipating heat, and dust is prevented from entering the inside.
As a further proposal of the utility model, the two-way switch is respectively connected with the L ED lamp and the negative pole of the power supply, when the two-way switch is connected with the power supply, the circuit conducts electricity in the forward direction, and when the two-way switch is connected with the L ED lamp, the circuit is electrified in the reverse direction.
As a further aspect of the present invention: the front and rear ends of the dust cover are provided with clamping blocks.
As a further aspect of the present invention: the front-mounted sealing plate and the rear-mounted sealing plate are correspondingly provided with clamping grooves in the inner sides and the clamping blocks, and the front-mounted sealing plate and the rear-mounted sealing plate are clamped with the clamping grooves through the clamping blocks and are convenient to detach.
As a further aspect of the present invention: the dust cover is externally connected with a controller, the controller is electrically connected with the bidirectional switch, and the shifting direction of the bidirectional switch is controlled through the controller.
As a further aspect of the present invention: the lead wires at two ends of the graphene semiconductor element penetrate through the front sealing plate and the rear sealing plate respectively, and the joint is sealed, so that dust is prevented from entering the interior of the joint.
Compared with the prior art, the beneficial effects of the utility model are that:
1. negative charges on the graphene semiconductor element can be neutralized, the suction force of the graphene semiconductor element to dust is removed, and positive charges of the dust are removed through discharging of the power supply cutoff electrode plate;
2. the dust cover is taken out of the uncharged dust through the fan, and the dust cover does not influence normal heat dissipation.
Drawings
Fig. 1 is a schematic structural diagram of a graphene semiconductor dust cover with a dust-proof function.
Fig. 2 is a schematic diagram of a connection between a graphene semiconductor middle plate and a graphene semiconductor element with a dustproof function.
Fig. 3 is a schematic diagram of a circuit in a graphene semiconductor with a dustproof function.
In the figure: 1. fixing the louver structure; 2. a front closing plate; 3. a dust cover; 4. a rear sealing plate; 5. a fan; 6. a lower polar plate; 7. a graphene semiconductor element; 8. and (4) an upper polar plate.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Please refer to fig. 1-3, in an embodiment of the present invention, a graphene semiconductor with dustproof function, includes a dust cover 3 and a graphene semiconductor element 7, the front end of the dust cover 3 is connected to a front sealing plate 2 through a clamping joint, a square through hole is opened on the surface of the front sealing plate 2, a fixed louver structure 1 is installed in the square through hole, the rear sealing plate 4 is connected to the rear end of the dust cover 3 through a clamping joint, a circular through hole is opened on the surface of the rear sealing plate 4, a fan 5 is installed in the circular through hole, an upper electrode plate 8 is installed on the inner upper surface of the dust cover 3, a lower electrode plate 6 is installed on the inner bottom surface of the dust cover 3, the upper electrode plate 8 is fixedly connected to the graphene semiconductor element 7, the upper electrode plate 8 is in direct contact with the graphene semiconductor element 7, an upper surface of the upper electrode plate 8 is connected to a lead, one end of the lead is connected to a positive electrode, a power negative electrode is connected to the lower electrode plate 6 through a.
1 blade slope of fixed shutter structure is down, because dust cover 3 influences the heat dissipation of graphite alkene semiconductor component 7, consequently, be equipped with the heat dissipation of fixed shutter structure, and prevent that the dust from getting into inside, two-way switch respectively with L ED lamp, the power negative pole is connected, when two-way switch and power switch-on, the circuit is forward electrically conductive, the joint piece is installed to the distribution of the reverse circular telegram dust cover 3 front and back end of circuit when two-way switch-on L ED lamp, leading shrouding 2 has seted up the joint groove with 4 inboard and the joint piece correspondences of rearmounted shrouding, carry out the joint through joint piece and joint groove, convenient the dismantlement, 3 external control wares of dust cover, the controller links to each other with the two-way switch electrical property, through dialling of controller control two-way switch, 7 both ends wire of graphite alkene semiconductor component pierce through leading shrouding 2 respectively.
The utility model discloses an operating principle is that graphite alkene semiconductor element 7 can produce static in work, the dust of positive charge in the adsorbed air, through controller switch-on circuit, the circuit circular telegram, upper polar plate 8 charges with bottom plate 6, upper polar plate 8 is positive charge, bottom plate 6 is negative charge, upper polar plate 8 and graphite alkene semiconductor element 7 direct contact, the negative charge on the graphite alkene semiconductor element 7 of neutralization, the dust of positive charge moves to the bottom plate 6 of negative charge, controller control two-way switch-on L ED lamp circuit back, upper polar plate 8 discharges with bottom plate 6 is equivalent to the power, when unnecessary electric charge passes through L ED lamp, L ED lamp can flash and extinguish after once, the dust is not charged this moment, make fan 5 switch-on, fan 5 rotates, take inside dust out, because dust cover 3's existence influences the heat dissipation, consequently, be equipped with fixed shutter structure in leading shrouding 2 department and dispel the heat, and the flabellum prevents that the dust from getting into inside down.
The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.

Claims (7)

1. The utility model provides a graphite alkene semiconductor with dustproof function, including dust cover (3), graphite alkene semiconductor component (7), a serial communication port, dust cover (3) front end passes through the joint and connects leading shrouding (2), square through hole has been seted up on leading shrouding (2) surface, the built-in fixed shutter structure (1) that is equipped with of square through hole, rearmounted shrouding (4) are connected through the joint to dust cover (3) rear end, circular through hole has been seted up on rearmounted shrouding (4) surface, the built-in fan (5) that is equipped with of circular through hole, dust cover (3) inside last fixed surface installs last polar plate (8), the inside bottom surface fixed mounting of dust cover (3) has bottom plate (6), go up polar plate (8) fixed connection graphite alkene semiconductor component (7), and go up polar plate (8) and graphite alkene semiconductor component (7) direct contact, go up surface connection wire on polar plate (8), wire one end switch on power supply positive, the power supply negative pole passes through wire and puts through wire and lower polar plate (6) switch on the wire, switch on the lead between last polar plate (8) and lower.
2. The graphene semiconductor with the dustproof function according to claim 1, wherein the fixed louver structure (1) has its blades inclined downward.
3. The graphene semiconductor with the dustproof function according to claim 1, wherein the bidirectional switch is respectively connected with an L ED lamp and a power supply cathode.
4. The graphene semiconductor with the dustproof function according to claim 1, wherein clamping blocks are distributed at the front end and the rear end of the dustproof cover (3).
5. The graphene semiconductor with the dustproof function according to claim 1, wherein the inner sides of the front sealing plate (2) and the rear sealing plate (4) are provided with clamping grooves corresponding to the clamping blocks.
6. The graphene semiconductor with the dustproof function according to claim 1, wherein the dustproof cover (3) is externally connected with a controller, and the controller is electrically connected with the bidirectional switch.
7. The graphene semiconductor with the dustproof function according to claim 1, wherein the leads at two ends of the graphene semiconductor element (7) penetrate through the front sealing plate (2) and the rear sealing plate (4), respectively, and the junction is sealed.
CN202020004028.3U 2020-01-02 2020-01-02 Graphene semiconductor with dustproof function Active CN211184597U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202020004028.3U CN211184597U (en) 2020-01-02 2020-01-02 Graphene semiconductor with dustproof function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202020004028.3U CN211184597U (en) 2020-01-02 2020-01-02 Graphene semiconductor with dustproof function

Publications (1)

Publication Number Publication Date
CN211184597U true CN211184597U (en) 2020-08-04

Family

ID=71798501

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202020004028.3U Active CN211184597U (en) 2020-01-02 2020-01-02 Graphene semiconductor with dustproof function

Country Status (1)

Country Link
CN (1) CN211184597U (en)

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Effective date of registration: 20230824

Address after: 401120 No. 319 Haier Road, Cuntan Street, Liangjiang New Area, Jiangbei District, Chongqing (Conference Room 2, 2nd Floor, Chongqing Bonded Commodity Exhibition and Trading Center) -4-00088

Patentee after: Chongqing Yuhe Guoxing Technology Co.,Ltd.

Address before: 453000 south section, 1st floor, comprehensive service building, Genghuang township industrial cluster, Fengquan District, Xinxiang City, Henan Province

Patentee before: Henan Yuhe graphene Application Technology Research Institute Co.,Ltd.