CN211088464U

CN211088464U - Microstrip transmission device

Info

Publication number: CN211088464U
Application number: CN201922075074.2U
Authority: CN
Inventors: 奉建华; 王文君; 林彬; 穆俊宏
Original assignee: Chengdu Maike Technology Co ltd
Current assignee: Chengdu Maike Technology Co ltd
Priority date: 2019-11-27
Filing date: 2019-11-27
Publication date: 2020-07-24
Anticipated expiration: 2029-11-27

Abstract

Microstrip transmission device relates to electron device. The utility model discloses a microstrip transmission device, include the base plate and set up in the microstrip line on base plate surface, its characterized in that, the base plate is the glass substrate, follows the trend of microstrip transmission line, respectively is provided with a metallization through-hole that pierces through the base plate in the both sides of microstrip transmission line, the metallization through-hole is as the shielding hole. The utility model discloses a but photoetching glass preparation high frequency signal shielding hole compares silicon through hole technique TSV, need not the preparation insulating layer, does not have electromigration phenomenon.

Description

Microstrip transmission device

Technical Field

The utility model relates to an electronic device, especially microstrip transmission line.

Background

With the development of IC chips in the nanometer direction, people have increasingly high requirements for small size, light weight, and high reliability of chips. The lead bonding technology adopted by the traditional 2D packaging needs long-range interconnection, the delay of the circuit is large, the circuit is volatile, and the overall mass and volume of the circuit system are also large. The development trend of miniaturization and high integration of electronic products requires a corresponding nano-packaging technology to correspond to the electronic products, and the through-hole interconnection technology is undoubtedly an interconnection packaging technology with high cost performance and high reliability.

At present, silicon or ceramic is mostly adopted as a substrate for a commonly used high-frequency signal shielding hole. If the signal shielding through hole is manufactured by using the TSV technology, because silicon is a semiconductor material and is low in resistivity, electrons around the TSV can freely move under the action of an electromagnetic field, adjacent signals can be affected, isolation transmission cannot be well achieved, and chip performance is affected. When the ceramic through hole technology TCV is adopted, the ceramic is mainly drilled by laser, the minimum aperture is 150 microns, the pitch is 250 microns, the center distance of the holes is 400 microns, high-density through holes are difficult to manufacture, good isolation transmission cannot be realized, the roughness of the side wall of the holes cannot meet the requirement, the strength of the ceramic after laser drilling is greatly reduced, the manufacturing requirement of miniaturization cannot be realized, and therefore the ceramic has great limitation on the aspect of high-frequency signal shielding transmission.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the technical problem that to the defect that technical background exists, but provide one kind and adopt photoetching glass for base plate preparation high frequency signal shielding hole structure and preparation method, reach the purpose that produces the high frequency signal shielding hole of high density, high accuracy, high performance to satisfy under the high frequency protection and the isolation transmission to the signal.

The utility model provides a technical scheme that technical problem adopted is, microstrip transmission device, include the base plate and set up in the microstrip line on base plate surface, its characterized in that, the base plate is the glass substrate, follows the trend of microstrip transmission line, respectively is provided with a metallization through-hole that pierces through the base plate in the both sides of microstrip transmission line, the metallization through-hole is as the shielding hole.

Further, the diameter of the metalized through hole is less than 50 microns, and the ratio of the depth to the diameter of the through hole is greater than or equal to 10: 1.

The microstrip transmission line comprises an A section, a B section and a C section which are connected in sequence, wherein the A section and the C section are located on the top surface of the substrate and are connected through metalized through holes, and the B section and the C section are connected through metalized through holes.

The utility model adopts the photoetching glass to manufacture the high-frequency signal shielding hole, compared with the TSV technology, the insulating layer is not required to be manufactured, the electromigration phenomenon is avoided, and the process is simple and controllable; compared with the TCV (ceramic through hole) technology, the photoetching glass is used as the substrate, the thickness of the substrate is 0.381 mm, the hole center spacing can be as small as 16 mu m, the density of the through hole is greatly improved, and the through hole with high density, controllable hole wall roughness and good mechanical property can be manufactured. The photoetching glass is used as the substrate to manufacture the high-frequency signal shielding hole, so that the problems of electromigration phenomenon of silicon, complex process and high cost can be solved, high-density and high-quality through holes can be manufactured, and signal protection and isolation transmission can be flexibly realized after metallization, therefore, the high-frequency signal shielding hole is an ideal solution for isolation transmission of high-frequency signals.

The utility model has the advantages of that:

1. the photoetching glass is used as the substrate, an insulating layer is not required to be manufactured, the process is simple, and the cost is low.

2. The photoetching glass can be used as the through hole, so that the defects of electromigration of the silicon through hole and insufficient strength and density of the ceramic through hole can be overcome, and the high-density and high-strength signal shielding hole can be obtained.

3. The properties of the glass can be adjusted by a formula, and the loss reducing dopant is added into the glass, so that the high-frequency dielectric loss of the glass substrate is reduced, and the signal isolation effect of the through hole is improved.

4. The roughness of the side wall of the through hole made of the photoetching glass is low, and the requirement of making a signal shielding hole can be met.

5. The photoetching glass can be used for manufacturing high-density signal shielding holes, so that the miniaturization requirement can be met while the high-performance transmission of signals is ensured.

6. The photoetching glass can be used for manufacturing through holes with the diameter of less than 50 micrometers, the through hole precision is high, the depth-diameter ratio of the through holes can reach more than 10:1, the surface metal wiring line width can be accurate to the micrometer level, and high-density micro through holes can be metalized and then can be used for high-isolation transmission of signals.

7. Based on the low-loss glass substrate, the transmission performance is obviously superior to that of a silicon substrate material.

8. The electromagnetic shielding holes are added, so that the signal transmission quality can be effectively improved, and the crosstalk between signal transmissions is reduced.

Drawings

Fig. 1 is a schematic diagram of a via microstrip transmission structure in the prior art.

Fig. 2 is a schematic bottom view of the prior art.

Fig. 3 is a schematic top view of the prior art.

Fig. 4 is a schematic structural diagram (schematic side view angle sectional view) of the present invention.

Fig. 5 is a schematic view of the bottom view angle of the present invention.

Fig. 6 is a schematic top view of the present invention.

Fig. 7 is a microscopic view of a lithographically printable glass via metallization.

FIG. 8 shows the electromagnetic signal shielding structure S of the present invention based on the photosensitive photo-lithographically-printable glass substrate and the silicon substrate₂₁And (5) parameter simulation result diagram.

FIG. 9 shows the structure with and without the shielding hole S of the photosensitive photoetching-enabled glass substrate₂₁And (5) parameter simulation graphs.

Detailed Description

Fig. 1 is a schematic diagram of a prior art structure, which does not have isolation holes. Fig. 2 is a schematic view showing a bottom view of the prior art shown in fig. 1. In fig. 1, 11 is a segment a of a microstrip transmission line, 12 is a segment B of the microstrip transmission line, 13 is a segment C of the microstrip transmission line, 14 is a metallized via, and 15 is a substrate.

Fig. 3 is a schematic structural view of the present invention, and fig. 4 is a bottom view. Section 41 is section a of the microstrip transmission line, section 42 is section B of the microstrip transmission line, section 43 is section C of the microstrip transmission line, section 44 is a metalized via hole, section 45 is a glass substrate, and section 46 is a shielding hole. Fig. 4 shows a bottom view state, with shielding holes provided on both sides of the microstrip transmission line. Since the shielding holes are metallized through holes, the top view is seen in fig. 6. The diameter of the metalized through hole (shielding hole and via hole) of the utility model is less than 50 microns, and the ratio of the depth/diameter of the through hole is more than or equal to 10: 1.

In the above figures, the shielding holes are arranged in a straight line, and obviously, other arrangement manners, such as a curve, may be adopted according to actual requirements.

The preparation method of the utility model comprises the following steps:

the method comprises the following steps: preparing a photo-etching glass sample block which is sensitive to ultraviolet light with a specific wavelength and has good uniformity by adopting a traditional method for preparing silicate glass, and then slicing and polishing the glass block to prepare a glass substrate with required thickness and surface roughness;

step two: placing the manufactured glass substrate with smooth surface under a mask plate with a shape of a required shielding through hole for ultraviolet exposure with specific wavelength and annealing at specific temperature, eliminating the thermal stress of the glass substrate and showing the shape of an exposure area;

step three: and carrying out selective solution etching on the annealed photoetching glass substrate, and controlling the concentration of the etching solution, the etching time and the etching temperature to obtain the etched through hole with required density and precision.

Step four: and carrying out secondary heat treatment on the etched glass, so that the photoetching glass is subjected to overall color change and crystallization, and the high-frequency dielectric property of the photoetching glass is improved.

Step five: and (4) preparing a metal seed layer on the glass subjected to the heat treatment in the last step.

Step six: and electroplating the glass through hole prepared in the previous step to realize metal filling in the through hole.

Step seven: and after the through hole is electroplated and filled, removing redundant metal on the surface, and polishing.

Step eight: and preparing a surface metal layer.

Step nine: and the patterning of the surface metal layer and the patterning of the microstrip line are realized through the mask alignment.

A micrograph of the metallized via is shown in fig. 7.

The utility model provides a high performance radio frequency signal shielding hole structure for radio frequency microsystem, but including a photoetching glass as the through-hole base plate, but used photoetching glass insulating nature is good, can produce high density, high-quality signal transmission shielding hole. The through hole metallization has good compactness and no obvious hollow defects.

As can be seen from fig. 8, the signal shielding structure based on the photo-litho glass is significantly superior to the conventional silicon-based material in transmission performance.

The signal shielding holes with uniform space are distributed on two sides of the transmission line, and the signal shielding holes are densely filled with metal, so that the electromagnetic shielding device has a very effective electromagnetic shielding effect, and plays roles of protecting transmission signals and isolating and shielding external interference signals. As can be seen from fig. 9, the simulation result of the simulation of S21 of the transmission model with the signal shielding hole is obviously due to the single via microstrip transmission structure in the high frequency domain.

The utility model discloses a but photoetching glass does the base plate, can produce high density, the controllable, good mechanical properties's of pore wall roughness through-hole. The photoetching glass is used as the substrate to manufacture the high-frequency signal shielding hole, so that the problems of electromigration phenomenon of silicon, complex process and high cost can be solved, high-density and high-quality through holes can be manufactured, and signal protection and isolation transmission can be flexibly realized after metallization, therefore, the high-frequency signal shielding hole is an ideal solution for isolation transmission of high-frequency signals.

After the glass through hole is manufactured through ultraviolet exposure, the through hole is metalized and filled, and high-quality isolation transmission of signals can be carried out.

Claims

1. The microstrip transmission device comprises a substrate and a microstrip line arranged on the surface of the substrate, and is characterized in that the substrate is a glass substrate, a row of metalized through holes penetrating through the substrate are respectively arranged on two sides of the microstrip transmission line along the trend of the microstrip transmission line, and the metalized through holes are used as shielding holes.

2. The microstrip transmission device of claim 1 wherein the diameter of the metallized via is less than 50 microns and the via depth/diameter ratio is greater than or equal to 10: 1.

3. The microstrip transmission device of claim 1 wherein the microstrip transmission line comprises a section a, a section B and a section C connected in sequence, the section a and the section C being located on the top surface of the substrate, the section a and the section B being connected by a metalized via, the section B and the section C being connected by a metalized via.