CN211079378U - Electroplating ring and electroplating equipment - Google Patents
Electroplating ring and electroplating equipment Download PDFInfo
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- CN211079378U CN211079378U CN201922166030.0U CN201922166030U CN211079378U CN 211079378 U CN211079378 U CN 211079378U CN 201922166030 U CN201922166030 U CN 201922166030U CN 211079378 U CN211079378 U CN 211079378U
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Abstract
The utility model relates to the technical field of semiconductors, a electroplate ring and electroplating device is disclosed. The device includes: the electroplating ring is used for placing a wafer; the positioning pin is positioned on the electroplating ring and used for stabilizing the wafer; the locating pin is divided into two parts: a base part connected with the plating ring, a contact part contacted with the wafer; wherein the contact part is designed into an elliptic cylinder structure; and the cavity is used for carrying out a wafer cleaning process. The utility model discloses a contact site to locating pin and wafer contact improves, and new structural design can reduce the area of contact of chemical agent and water, is favorable to playing the drainage to the discharge of wafer surface chemical agent and pure water when rotatory. Therefore, a good cleaning effect can be achieved, and the yield of the wafer electroplating process is improved.
Description
Technical Field
The utility model relates to the technical field of semiconductors, concretely relates to electroplate ring and electroplating device.
Background
With the continuous reduction of the characteristic size of a semiconductor integrated circuit device, the density of interconnection wiring of the semiconductor device is increased rapidly, so that the RC coupling parasitic effect brought by resistance and capacitance in an interconnection system is increased rapidly, and the speed of the device is influenced. Wherein, the resistance of the metal wire is increased along with the gradual reduction of the line width. The requirements of the devices on metal lines are therefore increasing. Copper is widely used in the manufacture of metal wires as a metal with low resistance and good electron migration resistance. However, since copper metal has characteristics of being not easy to etch and a by-product being difficult to volatilize, the metal wire is mainly manufactured by an electroplating process.
When a metal wire is manufactured by a semiconductor electroplating process, because a wafer needs to be in contact with an electroplating solution, the electroplating solution on the surface of the wafer needs to be cleaned when the electroplating process is finished, so as to prevent copper metal from remaining on the surface of the wafer due to residual acid. Therefore, how to avoid acid residue at a specific position on the wafer surface is a technical problem to be solved.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an electroplate ring and electroplating device is applied to electroplating process, through the improvement to electroplating ring structural design, prevents that the specific position in clean back wafer surface from remaining sour to improve wafer electroplating process's yields.
In order to solve the technical problem, the utility model provides an electroplating ring which is characterized in that:
the electroplating ring is used for placing a wafer;
the positioning pin is positioned on the electroplating ring and used for stabilizing the wafer;
the locating pin is divided into two parts: a base part connected with the plating ring, a contact part contacted with the wafer;
wherein the contact portion is designed as an elliptic cylinder structure.
Optionally, the contact portion is disposed on the base portion in an inclined manner.
Optionally, the height of the elliptic cylindrical structure is 3-8 mm.
Optionally, the contact portion is designed as at least two elliptic cylinder structures arranged at intervals.
Optionally, the interval between the elliptic cylindrical structures arranged at intervals is 1-2 mm.
Optionally, the end face of the elliptic cylinder structure is elliptic, the long axis of the end face is 4-10mm, and the short axis of the end face is 2-4 mm.
Alternatively, the contact portion is designed as a single elliptic cylinder structure.
Optionally, the contact portion is designed to be a single elliptic cylinder structure, the end face of the elliptic cylinder structure is elliptic, the long axis of the end face is 6-10mm, and the short axis of the end face is 3-6 mm.
Optionally, an included angle between the tangent plane direction of the contact point of the elliptic cylinder and the wafer and the long axis of the end face of the elliptic cylinder structure is 30-90 degrees.
The technical scheme of the utility model still provides an electroplating device, electroplating device adopts as above arbitrary the electroplating ring constitute, electroplating device includes:
the electroplating machine is used for carrying out a wafer electroplating process;
the cavity is used for carrying out a wafer cleaning process;
and a plating ring as described above.
The utility model has the advantages of, compare electroplating process in current semiconductor technology, the utility model discloses mainly improve to the contact site of locating pin and wafer contact, new structural design can reduce the area of contact of chemical agent and water, is favorable to playing the drainage to the discharge of wafer surface chemical agent and pure water when rotatory cleanness. In addition, the time and the rotating speed for washing the wafer are increased, so that a good cleaning effect can be achieved, and the yield of the wafer electroplating process is improved.
Drawings
Fig. 1 is a schematic structural diagram of a contact portion of a positioning pin contacting a wafer according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of the contact portion of the improved locating pin and the wafer according to an embodiment of the present invention;
fig. 3 is a cross-sectional view of a contact portion of an improved locating pin contacting a wafer according to another embodiment of the present invention.
Reference numerals
A wafer 1;
electroplating the ring 2;
a positioning pin 3;
a base part 4;
the conventional contact portion 51;
the modified contact portions 52, 53;
the side length d of the existing contact part;
improved end face major axes a, e of the contact portions;
improved end face minor axes b, f of the contact portions;
improved contact height c, g.
Detailed Description
The electroplating ring, electroplating equipment and wafer cleaning method according to the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a schematic structural diagram of a contact portion of a positioning pin contacting a wafer according to an embodiment of the present invention.
Referring to fig. 1, an electroplating apparatus (not shown) is provided, which includes: electroplating ring 2, locating pin 3. The utility model utilizes the prior electroplating machine platform to carry out semiconductor electroplating process on the wafer 1, and the electroplating ring 2 is used for placing the wafer 1; and the positioning pins 3 are used for stabilizing the wafer 1. Typically, the plating ring 2 will have 6 locating pins 3. The pin 3 can be divided into two parts: one is a base part connected with the plating ring 2; the other is a contact portion which is brought into contact with the wafer 1, and the contact portion is provided obliquely above the base portion. Wherein the contact portion is designed as an elliptic cylinder structure. A chamber (not shown) for performing a wafer cleaning process.
As will be understood by those skilled in the art, since the wafer 1 needs to be in contact with the plating solution during the metal line formation process in the semiconductor electroplating process, the plating solution on the surface of the wafer 1 needs to be cleaned at the end of the semiconductor electroplating process to prevent the copper metal from remaining on the surface of the wafer 1 in the subsequent processes due to the residual acid.
Specifically, referring to fig. 2, in the present embodiment, the contact portion 51 of the conventional positioning pin 3 contacting the wafer 1 is re-designed to have an elliptic cylinder structure, i.e., a cube with a side length d (6 mm). The base portion 4 of the positioning pin 3 is used for connecting the contact portion 51 to the positioning pin. In the semiconductor electroplating process, the bottleneck problem of the electroplating machine can cause the wafer 1 to wait for a certain time after electroplating, and then the wafer is removed from the cavity for rinsing. The design of the original plating ring 2 structure may result in unfavorable discharge of the plating solution during cleaning of the wafer 1, which may include, but is not limited to, chemical agents, pure water. Therefore, excessive plating solution remains on the surface of the wafer 1, especially on the contact portion 51 of the conventional positioning pin 3 and the wafer 1, which results in copper metal remaining after the chemical mechanical polishing process, and thus, the yield of the wafer is seriously lost.
The modified contact portion 52 is a single elliptical cylinder structure, wherein the height c of the elliptical cylinder structure is (3-8 mm). The elliptic cylinder is provided with an upper end face and a lower end face, the lower end face is connected with the base part 4, the end face of the elliptic cylinder structure is elliptic, the long axis a of the end face is (6-10mm), and the short axis b of the end face is (3-6 mm). The elliptic cylinder is obliquely arranged on the base part 4, and the included angle between the long axis a of the end surface of the elliptic cylinder structure and the tangent plane of the contact point of the wafer and the positioning pin 3 is (30-90 degrees), preferably (40-60 degrees), and further can be 45 degrees along the actual direction of discharging the solution. In the actual direction of solution discharge can be understood as: in the process of electroplating and cleaning the wafer, the electroplating ring can drive the wafer to rotate along a fixed direction at a certain speed, which can be clockwise or anticlockwise, in the rotating process, liquid on the edge of the wafer can be thrown out, the liquid has a throwing speed on the edge of the wafer, the direction of the throwing speed is just opposite to the tangential speed direction (namely the rotation direction of the wafer) of the wafer at the edge, and the direction of the throwing speed of the liquid is the actual direction of the liquid discharged from the wafer.
Therefore, the new structural design is an elliptic cylinder structure (namely, an arc cylinder), the contact area between the positioning pin 3 and the wafer 1 can be reduced, and the positioning pin 3 can not block chemical reagents and pure water when the wafer 1 is rotationally cleaned, so that the discharge of electroplating solution is facilitated, and the wafer 1 is prevented from having residual liquid at the position of the positioning pin 3. Meanwhile, in the actual direction of removing the solution, the design of the inclination angle of the elliptic cylinder structure can lead the wafer to play a role in draining the chemical reagent and the pure water on the wafer in the rotating process.
Further, the improved contact portion 52 is a single elliptic cylinder structure, and the elliptic cylinder is designed to increase in size, so that the contact area between the positioning pin 3 and the wafer can be further reduced, and the stability of the wafer during rotation can be ensured.
Therefore, the key point of the present embodiment is the improvement of the contact portion of the positioning pin 3 and the wafer 1, and the new structure design can continuously maintain the stability of the wafer 1 in the rotational cleaning, and on the other hand, can facilitate the discharge of the chemical agent and pure water on the surface of the wafer when the wafer 1 is rotationally cleaned in the electroplating chamber, so as not to cause the corrosion of the wafer surface by the residual acid when waiting for further cleaning; thereby improving the yield of the wafer electroplating process.
And simultaneously, the utility model discloses improve the contact site structure of back locating pin 3 and not only be limited to the figure structure in this embodiment.
In another embodiment of the present invention, there is a new process improvement based on the first embodiment.
Fig. 1 is a schematic structural diagram of a contact portion of a positioning pin contacting a wafer according to an embodiment of the present invention.
Referring to fig. 1, an electroplating apparatus (not shown) is provided, which includes: electroplating ring 2, locating pin 3. The utility model utilizes the prior electroplating machine platform to carry out semiconductor electroplating process on the wafer 1, and the electroplating ring 2 is used for placing the wafer 1; and the positioning pins 3 are used for stabilizing the wafer 1. Typically, the plating ring 2 will have 6 locating pins 3. The pin 3 can be divided into two parts: one is a base part connected with the plating ring 2; the other is a contact portion which is brought into contact with the wafer 1, and the contact portion is provided obliquely above the base portion. Wherein the contact portion is designed as an elliptic cylinder structure. A chamber (not shown) for performing a wafer cleaning process.
As will be understood by those skilled in the art, in the process of fabricating metal lines in a semiconductor electroplating process, since the wafer 1 needs to be in contact with a plating solution, at the end of the semiconductor electroplating process, the plating solution on the surface of the wafer 1 needs to be cleaned to prevent copper metal from remaining on the surface of the wafer 1 in the subsequent processes due to the residual acid.
Specifically, referring to fig. 3, in the present embodiment, the contact portion 51 of the conventional positioning pin 3 contacting the wafer 1 is redesigned to be an elliptic cylinder structure, i.e., a cube with a side length d (6 mm). The base portion 4 of the positioning pin 3 is used for connecting the contact portion 51 to the positioning pin. In the semiconductor electroplating process, the bottleneck problem of the electroplating machine can cause the wafer 1 to wait for a certain time after electroplating, and then the wafer is removed from the cavity for rinsing. The design of the original plating ring 2 structure may result in unfavorable discharge of the plating solution during cleaning of the wafer 1, which may include, but is not limited to, chemical agents, pure water. Therefore, excessive plating solution remains on the surface of the wafer 1, especially on the contact portion 51 of the conventional positioning pin 3 and the wafer 1, which results in copper metal remaining after the chemical mechanical polishing process, and thus, the yield of the wafer is seriously lost.
The improved contact part 53 is of at least two elliptic cylinders which are arranged at intervals, the at least two elliptic cylinders are arranged on the base part 4 of the same positioning pin 3, and the distance between the elliptic cylinders is 1-2 mm. Wherein the height g of the elliptic cylindrical structure is (3-8 mm). The elliptic cylinder is provided with an upper end face and a lower end face, the lower end face is connected with the base part 4, the end face of the elliptic cylinder structure is elliptic, the long axis e of the end face is (4-10mm), and the short axis f of the end face is (2-4 mm). The elliptic cylinder is obliquely arranged on the base part 4, and the long axis e of the elliptic cylinder structure forms an included angle (30-90 degrees), preferably (40-60 degrees), and further can be 45 degrees with a tangent plane of a contact point of the wafer and the positioning pin 3 along the actual direction of discharging the solution. In the actual direction of solution discharge can be understood as: in the process of electroplating and cleaning the wafer, the electroplating ring can drive the wafer to rotate along a fixed direction at a certain speed, which can be clockwise or anticlockwise, in the rotating process, liquid on the edge of the wafer can be thrown out, the liquid has a throwing speed on the edge of the wafer, the direction of the throwing speed is just opposite to the tangential speed direction (namely the rotation direction of the wafer) of the wafer at the edge, and the direction of the throwing speed of the liquid is the actual direction of the liquid discharged from the wafer.
Therefore, the new structural design is an elliptic cylinder structure (namely, an arc cylinder), the contact area between the positioning pin 3 and the wafer 1 can be reduced, and the positioning pin 3 can not block chemical reagents and pure water when the wafer 1 is rotationally cleaned, so that the discharge of electroplating solution is facilitated, and the wafer 1 is prevented from having residual liquid at the position of the positioning pin 3. The arrangement of a plurality of elliptic cylinders on the same base part can improve the stability of the wafer in the process of high-speed rotation. Meanwhile, in the actual direction of removing the solution, the design of the inclination angle of the elliptic cylinder structure can lead the wafer to play a role in draining the chemical reagent and the pure water on the wafer in the rotating process.
Further, the improved contact part 53 is of a structure of three elliptic cylinders arranged at intervals, and the intervals between the elliptic cylinders are 1-1.5mm, so that the stability of the wafer 1 during rotation cleaning can be maintained, and the contact area between the contact part 53 and the wafer can be reduced to the greatest extent.
Therefore, the key point of the present embodiment is the improvement of the contact portion of the positioning pin 3 and the wafer 1, and the new structure design can continuously maintain the stability of the wafer 1 in the rotational cleaning, and on the other hand, can facilitate the discharge of the chemical agent and pure water on the surface of the wafer when the wafer 1 is rotationally cleaned in the electroplating chamber, so as not to cause the corrosion of the wafer surface by the residual acid when waiting for further cleaning; thereby improving the yield of the wafer electroplating process.
Meanwhile, the utility model discloses electroplating ring 2 that requires, the contact site structure of improvement back locating pin 3 is not only limited to the graph structure in this embodiment.
The utility model also provides an electroplating device. The electroplating device is formed by adopting an electroplating ring as shown in figure 3.
Referring to fig. 1, the electroplating apparatus is applied to an electroplating process of a wafer, and includes: an electroplating machine (not shown) for performing a wafer electroplating process; the electroplating ring 2 is used for placing a wafer; the positioning pin 3 is positioned on the electroplating ring 2 and used for stabilizing the wafer 1; the positioning pin 3 is divided into two parts: the wafer electroplating device comprises a base part connected with the electroplating ring and a contact part contacted with the wafer, wherein the contact part is obliquely arranged on the base part. Wherein the contact part is designed into an elliptic cylinder structure; a chamber (not shown) for performing a wafer cleaning process.
Specifically, electroplating equipment is currently used in the process of manufacturing metal lines in a semiconductor electroplating process. Since the wafer 1 needs to be in contact with the plating solution, at the end of the semiconductor electroplating process, the plating solution on the surface of the wafer 1 needs to be cleaned to prevent the copper metal from remaining on the surface of the wafer 1 in the subsequent process due to the residual acid.
Therefore, the present embodiment improves the plating ring 2 in the plating apparatus.
Specifically, referring to fig. 3, in the present embodiment, the contact portion 51 of the conventional positioning pin 3 contacting the wafer 1 is redesigned to have an elliptic cylinder structure, i.e., a cube with a side length d (6 mm). The improved contact part 53 is of at least two elliptic cylinders which are arranged at intervals, the at least two elliptic cylinders are arranged on the base part 4 of the same positioning pin 3, and the distance between the elliptic cylinders is 1-2 mm. Wherein the height g of the elliptic cylindrical structure is (3-8 mm). The elliptic cylinder is provided with an upper end face and a lower end face, the lower end face is connected with the base part 4, the end face of the elliptic cylinder structure is elliptic, the long axis e of the end face is (4-10mm), and the short axis f of the end face is (2-4 mm). The elliptic cylinder is obliquely arranged on the base part 4, and the long axis e of the elliptic cylinder structure forms an included angle (30-90 degrees), preferably (40-60 degrees), and further can be 45 degrees with a tangent plane of a contact point of the wafer and the positioning pin 3 along the actual direction of discharging the solution.
Therefore, the key point of the present embodiment is the improvement of the contact portion of the positioning pin 3 and the wafer 1, and the new structure design can continuously maintain the stability of the wafer 1 in the rotational cleaning, and on the other hand, can facilitate the discharge of the chemical agent and pure water on the surface of the wafer when the wafer 1 is rotationally cleaned in the electroplating chamber, so as not to cause the corrosion of the wafer surface by the residual acid when waiting for further cleaning; thereby improving the yield of the wafer electroplating process.
Meanwhile, the structure of the electroplating ring adopted by the electroplating device in the embodiment of the present invention is not limited to the pattern structure in this embodiment.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A plating ring, comprising:
the electroplating ring is used for placing a wafer;
the positioning pin is positioned on the electroplating ring and used for stabilizing the wafer;
the locating pin is divided into two parts: a base part connected with the plating ring, a contact part contacted with the wafer;
wherein the contact portion is designed as an elliptic cylinder structure.
2. The plating ring of claim 1, wherein said contact portion is disposed obliquely on said base portion.
3. The plating ring of claim 1, wherein the height of the cylindroid structure is 3-8 mm.
4. The plating ring of claim 3, wherein said contact portion is configured as at least two spaced apart elliptical cylindrical structures.
5. The plating ring of claim 4, wherein the spaced apart elliptical pillar structures are spaced apart by 1-2 mm.
6. The plating ring of claim 5, wherein the end face of the elliptical cylinder structure is elliptical, with a long axis of the end face of 4-10mm and a short axis of the end face of 2-4 mm.
7. The plating ring of claim 3, wherein said contact portion is configured as a single elliptical cylinder.
8. The plating ring according to claim 7, wherein the contact portion is designed as a single elliptic cylindrical structure having an elliptic end face with a major axis of 6-10mm and a minor axis of 3-6 mm.
9. The electroplating ring according to any one of claims 1 to 8, wherein the tangential direction of the contact point between the elliptic cylinder and the wafer forms an angle of 30 to 90 degrees with the long axis of the end face of the elliptic cylinder structure.
10. An electroplating apparatus, comprising:
the electroplating machine is used for carrying out a wafer electroplating process;
the cavity is used for carrying out a wafer cleaning process;
and the plating ring of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922166030.0U CN211079378U (en) | 2019-12-05 | 2019-12-05 | Electroplating ring and electroplating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922166030.0U CN211079378U (en) | 2019-12-05 | 2019-12-05 | Electroplating ring and electroplating equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211079378U true CN211079378U (en) | 2020-07-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922166030.0U Active CN211079378U (en) | 2019-12-05 | 2019-12-05 | Electroplating ring and electroplating equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211079378U (en) |
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2019
- 2019-12-05 CN CN201922166030.0U patent/CN211079378U/en active Active
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