CN211046493U - High-voltage dynamic reactive power compensation device - Google Patents
High-voltage dynamic reactive power compensation device Download PDFInfo
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- CN211046493U CN211046493U CN201922453155.1U CN201922453155U CN211046493U CN 211046493 U CN211046493 U CN 211046493U CN 201922453155 U CN201922453155 U CN 201922453155U CN 211046493 U CN211046493 U CN 211046493U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E40/30—Reactive power compensation
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Abstract
The utility model relates to a reactive power compensator technical field, its aim at provides a high pressure dynamic reactive power compensator. The adopted technical scheme is as follows: a high-voltage dynamic reactive power compensation device comprises a thyristor, wherein a first anode of the thyristor is electrically connected with a three-phase power input end, a second anode of the thyristor is electrically connected with a high-voltage power capacitor, and a gate pole of the thyristor is electrically connected with a second processor through an isolation driving circuit; the high-voltage power capacitor is internally provided with a first processor, a temperature detection circuit and a wireless transmission circuit, and the temperature detection circuit and the wireless transmission circuit are electrically connected with the first processor; the second processor is electrically connected with a wireless receiving circuit. The utility model discloses it is low to lay the degree of difficulty, and response speed is fast, the security is high simultaneously.
Description
Technical Field
The utility model relates to a reactive power compensator technical field especially relates to a high pressure dynamic reactive power compensator.
Background
In a high voltage dynamic reactive power compensation device, in order to improve the safety of the high voltage dynamic reactive power compensation device and avoid the occurrence of an explosion and other events of a high voltage power capacitor, a temperature detection device is generally arranged in the high voltage power capacitor to confirm whether the internal temperature of the high voltage power capacitor exceeds the limit.
However, in the prior art, the temperature detection device inside the high-voltage power capacitor is usually set to be in a wired connection mode, and thus, the high-voltage dynamic reactive power compensation device is difficult to arrange due to requirements such as a safe distance, and the process difficulty is increased. In order to avoid the above problems, the prior art generally places the temperature sensor on the surface of the capacitor body, however, in this way, in the process of detecting the temperature, delay of response time is easily caused, and thus control of the high-voltage power capacitor cannot be implemented.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problems existing in the prior art, the utility model provides a high-voltage dynamic reactive power compensation device.
The utility model adopts the technical proposal that:
a high-voltage dynamic reactive power compensation device comprises a thyristor, wherein a first anode of the thyristor is electrically connected with a three-phase power input end, a second anode of the thyristor is electrically connected with a high-voltage power capacitor, and a gate pole of the thyristor is electrically connected with a second processor through an isolation driving circuit; the high-voltage power capacitor is internally provided with a first processor, a temperature detection circuit and a wireless transmission circuit, and the temperature detection circuit and the wireless transmission circuit are electrically connected with the first processor; the second processor is electrically connected with a wireless receiving circuit.
Preferably, the second processor is also electrically connected with a current sampling circuit and a voltage sampling circuit.
Further preferably, a pressure detection circuit is further disposed in the high-voltage power capacitor, and the pressure detection circuit is electrically connected to the first processor.
Further preferably, the temperature detection circuit comprises a thermistor, one pole of the thermistor is electrically connected with the first digital input/output pin of the first processor, and the other pole of the thermistor is grounded.
Further preferably, the pressure detection circuit includes a piezoresistive conversion chip, a first operational amplifier, a second operational amplifier, a third resistor, a second resistor, a fifth resistor and a fourth resistor, the piezoresistive conversion chip has four wiring poles, a first pole of the piezoresistive conversion chip is grounded, a second pole and a third pole of the piezoresistive conversion chip are respectively and electrically connected with a non-inverting input terminal and an inverting input terminal of the first operational amplifier, the non-inverting input terminal of the first operational amplifier is also grounded through the third resistor, the inverting input terminal of the first operational amplifier is also electrically connected with an output terminal of the first operational amplifier through the second resistor, a joint point of the output terminal of the first operational amplifier and the second resistor is electrically connected with the non-inverting input terminal of the second operational amplifier through the fifth resistor, the inverting input terminal of the second operational amplifier is grounded, the non-inverting input terminal of the second operational amplifier is also electrically connected with an output terminal of the second operational amplifier through the fourth resistor, and the joint point of the output end of the second operational amplifier and the fourth resistor is electrically connected with a second digital input/output pin of the first processor.
Preferably, the first processor and the second processor are both of the type CC1110F 32.
The beneficial effects of the utility model are concentrated and appear, it is low to lay the degree of difficulty, and response speed is fast, the security is high simultaneously. Particularly, the utility model discloses in the use, when the temperature changes in the high voltage power capacitor, the voltage of temperature detection circuit output changes thereupon, and the voltage of temperature detection circuit output is received in real time to first treater, then converts this voltage into digital signal, sends digital signal to wireless transmitting circuit at last; the wireless receiving circuit receives the digital signal output by the wireless transmitting circuit in real time and then transmits the digital signal to the second processor; the second processor receives the digital signal sent by the wireless receiving circuit in real time, then adjusts the digital signal into a temperature signal, and drives the thyristor to cut off the input high-voltage power capacitor or reject the input high-voltage power capacitor through the isolation driving circuit when the temperature exceeds a threshold value, so that the safety of the high-voltage power capacitor and the high-voltage dynamic reactive power compensation device is protected, and the power safety accident is avoided. In the embodiment, the temperature detection circuit is wirelessly connected with the second processor, so that the difficulty in laying the high-voltage dynamic reactive power compensation device is effectively reduced, the high-voltage power capacitor can be monitored in real time, and the safety is high; in addition, because the temperature detection circuit, the first processor and the wireless transmitting circuit are all arranged inside the high-voltage power capacitor, the temperature detection device can respond in real time, and the problem of response time delay is avoided.
Drawings
Fig. 1 is a control block diagram of the present invention;
fig. 2 is a schematic circuit diagram of the first processor circuit, the wireless transmitter circuit, the temperature detector circuit and the pressure detector circuit of the present invention;
FIG. 3 is a circuit schematic of a second processor circuit of the present invention;
fig. 4 is a schematic circuit diagram of the wireless receiving circuit of the present invention;
fig. 5 is a schematic circuit diagram of the current sampling circuit of the present invention;
fig. 6 is a schematic circuit diagram of the medium voltage sampling circuit of the present invention;
fig. 7 is a schematic circuit diagram of the isolation drive circuit and thyristor of the present invention;
fig. 8 is a schematic circuit diagram of the display circuit of the present invention;
fig. 9 is a schematic circuit diagram of the reset circuit of the present invention.
Detailed Description
Example 1:
the embodiment provides a high-voltage dynamic reactive power compensation device, as shown in fig. 1, which includes a thyristor, a first anode of the thyristor is electrically connected to a three-phase power input end, it should be understood that the three-phase power input end is an outlet end of a superior switch cabinet, a second anode of the thyristor is electrically connected to a high-voltage power capacitor, and a gate of the thyristor is electrically connected to a second processor U3 through an isolation driving circuit; a first processor IC1, a temperature detection circuit and a wireless transmission circuit are arranged in the high-voltage power capacitor, and the temperature detection circuit and the wireless transmission circuit are electrically connected with a first processor IC 1; the second processor U3 is electrically connected to a wireless receiving circuit.
Specifically, as shown in fig. 2, a schematic circuit diagram of the first processor circuit, the wireless transmission circuit and the temperature detection circuit is shown; FIG. 3 is a circuit schematic of the second processor U3; fig. 4 is a circuit schematic diagram of a wireless receiving circuit. Fig. 7 is a circuit schematic of the isolated drive circuit and thyristor.
In this embodiment, the types of the first processor IC1 and the second processor U3 are both CC1110F32, and the wireless radio frequency IC chip with the type of CC1110F32 has an advanced low power consumption operating mode, which can effectively reduce the power consumption of the system. Specifically, the first digital input/output pin PA0 of the first processor IC1 is electrically connected to the temperature detection circuit, the second digital input/output pin PA1 of the first processor IC1 is electrically connected to the pressure detection circuit, and the RF connection pin RF of the first processor IC1 is electrically connected to the first antenna.
The isolation driving circuit is provided with A, B, C three phases, for example, a phase C, a pulse signal of the second processor U3 is amplified by the third triode Q3 and then is transmitted to the gate pole of the thyristor TS3 through the secondary winding of the transformer T3, the thyristor TS3 is conducted, and then a high-voltage power capacitor is put into the isolation driving circuit, so that the power rate is improved. Specifically, thyristor TS3 is a triac, the gate and T1 of thyristor TS3 are electrically connected to the two poles of the primary winding of transformer T3, and T2 of thyristor TS3 is electrically connected to the high-voltage power capacitor.
The working principle of the embodiment is as follows: when the temperature in the high-voltage power capacitor changes, the voltage output by the temperature detection circuit changes, the first processor IC1 receives the voltage output by the temperature detection circuit in real time, converts the voltage into a digital signal, and finally sends the digital signal to the wireless sending circuit; the wireless receiving circuit receives the digital signal output by the wireless transmitting circuit in real time and then transmits the digital signal to the second processor U3; the second processor U3 receives the digital signal sent by the wireless receiving circuit in real time, then adjusts the digital signal into a temperature signal, and drives the thyristor to cut off the input high-voltage power capacitor or reject the input high-voltage power capacitor through the isolation driving circuit when the temperature exceeds a threshold value, thereby protecting the safety of the high-voltage power capacitor and the high-voltage dynamic reactive power compensation device and avoiding the occurrence of power safety accidents. In the embodiment, the temperature detection circuit is wirelessly connected with the second processor U3, so that the difficulty in laying the high-voltage dynamic reactive power compensation device is effectively reduced, the high-voltage power capacitor can be monitored in real time, and the safety is high; in addition, because the temperature detection circuit, the first processor IC1 and the wireless transmission circuit are all arranged in the high-voltage power capacitor, the temperature detection device can respond in real time, and the problem of response time delay is avoided.
Specifically, in the present embodiment, the temperature detection circuit includes a thermistor RT, one pole of the thermistor RT is electrically connected to the first digital input/output pin PA0 of the first processor IC1, and the other pole of the thermistor RT is grounded. The resistance value of the thermistor RT changes along with the temperature, the voltage on the thermistor RT is input into a first digital input/output pin PA0 of a first processor IC1, then the voltage is A/D converted into a digital signal through a first processor IC1, and after address information is added into the digital signal by the first processor IC1, the digital signal is sent to a wireless sending circuit and then sent out of a high-voltage power capacitor by the wireless sending circuit.
In this embodiment, the second processor U3 is further electrically connected to a current sampling circuit and a voltage sampling circuit.
Specifically, as shown in fig. 5, a circuit schematic diagram of the current sampling circuit includes a current transformer TA and a first a/D converter IC3, where the current transformer TA is used to measure a current signal of a line and simultaneously has current conversion and electrical isolation functions, the current signal of the line is converted by the current transformer TA and then sent to a first a/D converter IC3 for sampling and conversion, the sampled and converted signal is sent to a pin 34 of a second processor U3 and output to pins 32 and 33 of a second processor U3 through/CS and C L K to synchronize with voltage sampling, the current transformer TA is of a model MCT1 and is used for a three-phase electric energy meter and other electric energy metering devices with high precision and small phase error requirements, and a combined transformer is adopted to save space in the meter compared with a single transformer of the same number, and has a wide linear range, high precision of output current and good consistency.
The circuit schematic diagram of the voltage sampling circuit is shown in fig. 6, the voltage sampling circuit comprises a voltage transformer (TV1, TV2 and TV3) and a second A/D converter IC4, the voltage transformer is used for measuring voltage signals of a three-phase line, the voltage signals are converted by the voltage transformer and sent to the second A/D converter IC4 for sampling and conversion, the sampled and converted signals are sent to a pin 35 of a second processor U3 and output to a pin 32 and a pin 33 of the second processor U3 through/CS and C L K to be synchronous with current sampling, three-phase zero-crossing signals of A, B, C are respectively sent to a pin 37, a pin 1 and a pin 3 of a microprocessor, wherein the model of the voltage transformer is HGQV 2.
In this embodiment, the first a/D converter IC3 and the second a/D converter IC4 are both in the form of IC3T L C549, which is a low-cost, high-performance 8-bit a/D converter manufactured by a/D converter TI company.
The current sampling circuit and the voltage sampling circuit have synchronous signals during sampling, and in addition, the voltage sampling circuit samples zero-crossing signals during sampling.
Further, a pressure detection circuit is also provided within the high voltage power capacitor, the pressure detection circuit being electrically connected to the first processor IC 1. The pressure detection circuit can detect the pressure fixed value of the high-voltage power capacitor.
Specifically, the pressure detection circuit comprises a piezoresistive conversion chip RH, a first operational amplifier RS1, a second operational amplifier RS2, a third resistor R3, a second resistor R2, a fifth resistor R5 and a fourth resistor R4, the piezoresistive conversion chip RH has four wiring poles in total, the first pole of the piezoresistive conversion chip RH is grounded, the second pole and the third pole of the piezoresistive conversion chip RH are respectively and electrically connected with the non-inverting input terminal and the inverting input terminal of the first operational amplifier RS1, the non-inverting input terminal of the first operational amplifier RS1 is also grounded through the third resistor R3, the inverting input terminal of the first operational amplifier RS1 is also electrically connected with the output terminal of the first operational amplifier RS1 through the second resistor R2, the junction point of the output terminal of the first operational amplifier RS1 and the second resistor R2 is also electrically connected with the non-inverting input terminal of the second operational amplifier RS2 through the fifth resistor R5, the input terminal of the second operational amplifier RS2 is grounded, the non-inverting input terminal of the second operational amplifier RS 3527 is also electrically connected with the output terminal of the second operational amplifier RS 4 through the second resistor R3642, the junction of the output of the second op-amp RS2 and the fourth resistor R4 is electrically connected to the second digital input output pin PA1 of the first processor IC 1. In the working process, pressure signals detected by a bridge circuit in a piezoresistive conversion chip RH are differentially amplified by a first operational amplifier RS1, then amplified again by a second operational amplifier RS2, sent to a second digital input/output pin PA1 of a first processor IC1, converted into digital signals through A/D by a first processor IC1, added with address information by a first processor IC1 and sent out of a high-voltage power capacitor by a wireless sending circuit.
The piezoresistive conversion chip RH is realized by adopting an insulation piezoresistive pressure sensitive chip with the model number of GZP1006, has good linearity, repeatability and stability and high sensitivity, and is convenient for users to debug output by adopting operational amplifiers or integrated circuits.
In the implementation of this embodiment, the second processor U3 may calculate the corresponding reactive power according to the signals sent by the current sampling circuit and the voltage sampling circuit, and then determine whether the high voltage dynamic reactive power compensation device is applied to the high voltage power capacitor according to the predetermined capacitance fixed value. When the high-voltage power capacitor needs to be put into use, whether the internal temperature and the internal pressure of the high-voltage power capacitor exceed the limits is judged according to the temperature signal and the pressure signal received by the wireless receiving circuit and according to the temperature fixed value and the pressure fixed value prestored in the second processor U3; when the temperature or the pressure exceeds the limit, the input pulse is not sent, so that the high-voltage power capacitor is locked and prompt information is displayed for a user. When the capacitor is switched on, the second processor U3 calculates that the temperature or pressure signal sent by the wireless receiving circuit exceeds the limit, the pulse signal is closed to enable the thyristor to cut off the high-voltage power capacitor, and the high-voltage power capacitor is in a locked state. Therefore, the comprehensive protection of the high-voltage dynamic reactive power compensation device is realized.
Further, in order to display data such as current, voltage and/or reactive power in the high-voltage dynamic reactive power compensation device, a display screen circuit is further provided in this embodiment, as shown in fig. 8, the display screen circuit is electrically connected to the second processor U3; in order to reset the second processor U3, as shown in fig. 9, the present embodiment further includes a reset circuit electrically connected to the second processor U3.
Although specific embodiments of the present invention have been described above, it will be appreciated by those skilled in the art that changes and modifications may be made to these embodiments without departing from the principles and spirit of the invention, and these changes and modifications are intended to fall within the scope of the invention.
Claims (6)
1. A high-voltage dynamic reactive power compensation device is characterized in that: the three-phase power supply comprises a thyristor, wherein a first anode of the thyristor is electrically connected with a three-phase power input end, a second anode of the thyristor is electrically connected with a high-voltage power capacitor, and a gate of the thyristor is electrically connected with a second processor (U3) through an isolation driving circuit; a first processor (IC1), a temperature detection circuit and a wireless transmission circuit are arranged in the high-voltage power capacitor, and the temperature detection circuit and the wireless transmission circuit are electrically connected with the first processor (IC 1); the second processor (U3) is electrically connected with a wireless receiving circuit.
2. The high-voltage dynamic reactive power compensation device according to claim 1, wherein: the second processor (U3) is also electrically connected with a current sampling circuit and a voltage sampling circuit.
3. A high voltage dynamic reactive power compensation device according to claim 1 or 2, characterized in that: the high-voltage power capacitor is also internally provided with a pressure detection circuit which is electrically connected with the first processor (IC 1).
4. A high voltage dynamic reactive power compensation device according to claim 3, wherein: the temperature detection circuit comprises a thermistor (RT), one pole of the thermistor (RT) is electrically connected with a first digital input and output pin of the first processor (IC1), and the other pole of the thermistor (RT) is grounded.
5. The high voltage dynamic reactive power compensation device according to claim 4, wherein: the pressure detection circuit comprises a piezoresistive transformation chip (RH), a first operational amplifier (RS1), a second operational amplifier (RS2), a third resistor (R3), a second resistor (R2), a fifth resistor (R5) and a fourth resistor (R4), the piezoresistive transformation chip (RH) has four wiring poles in total, a first pole of the piezoresistive transformation chip (RH) is grounded, a second pole and a third pole of the piezoresistive transformation chip (RH) are respectively and electrically connected with a non-inverting input end and an inverting input end of the first operational amplifier (RS1), the non-inverting input end of the first operational amplifier (RS1) is also grounded through a third resistor (R3), the inverting input end of the first operational amplifier (RS1) is also electrically connected with an output end of the first operational amplifier (RS1) through a second resistor (R2), an output end of the first operational amplifier (RS1) and a junction point of the second resistor (R2) are electrically connected with an non-inverting input end of the second operational amplifier (RS2) through a fifth operational amplifier (R5), the inverting input end of the second operational amplifier (RS2) is grounded, the non-inverting input end of the second operational amplifier (RS2) is electrically connected with the output end of the second operational amplifier (RS2) through a fourth resistor (R4), and the junction point of the output end of the second operational amplifier (RS2) and the fourth resistor (R4) is electrically connected with a second digital input and output pin of the first processor (IC 1).
6. The high-voltage dynamic reactive power compensation device according to claim 1, wherein: the first processor (IC1) and the second processor (U3) are both CC1110F 32.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922453155.1U CN211046493U (en) | 2019-12-30 | 2019-12-30 | High-voltage dynamic reactive power compensation device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201922453155.1U CN211046493U (en) | 2019-12-30 | 2019-12-30 | High-voltage dynamic reactive power compensation device |
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| CN211046493U true CN211046493U (en) | 2020-07-17 |
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| CN201922453155.1U Expired - Fee Related CN211046493U (en) | 2019-12-30 | 2019-12-30 | High-voltage dynamic reactive power compensation device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113466653A (en) * | 2021-07-29 | 2021-10-01 | 浙江方圆电气设备检测有限公司 | Multifunctional thyristor switching switch detection method |
-
2019
- 2019-12-30 CN CN201922453155.1U patent/CN211046493U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113466653A (en) * | 2021-07-29 | 2021-10-01 | 浙江方圆电气设备检测有限公司 | Multifunctional thyristor switching switch detection method |
| CN113466653B (en) * | 2021-07-29 | 2023-11-03 | 浙江方圆电气设备检测有限公司 | Multifunctional thyristor switching switch detection method |
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| CP01 | Change in the name or title of a patent holder |
Address after: 610000 International Exhibition Trade Center, 2, Pioneer Road, hi tech Zone, Sichuan, Chengdu, 7F Patentee after: Chengdu Xingyu Rongke Power Electronics Co.,Ltd. Address before: 610000 International Exhibition Trade Center, 2, Pioneer Road, hi tech Zone, Sichuan, Chengdu, 7F Patentee before: CHENGDU XINGYU ENERGY-SAVING TECHNOLOGY Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200717 Termination date: 20211230 |
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| CF01 | Termination of patent right due to non-payment of annual fee |