CN210981521U - Optical coupling structure for terahertz detection - Google Patents
Optical coupling structure for terahertz detection Download PDFInfo
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- CN210981521U CN210981521U CN201922294454.5U CN201922294454U CN210981521U CN 210981521 U CN210981521 U CN 210981521U CN 201922294454 U CN201922294454 U CN 201922294454U CN 210981521 U CN210981521 U CN 210981521U
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Abstract
The utility model relates to an optical coupling structure for terahertz is surveyed now belongs to terahertz and surveys technical field now. The terahertz detector mainly comprises a lens, wherein the lens is provided with a plane and a spherical surface, a substrate is arranged on the plane of the lens, a terahertz detector is arranged on the substrate, and the terahertz detector is arranged at the center of the plane of the lens; the terahertz waves are focused and incident on the terahertz detection device after passing through the lens frontal sphere and the substrate. The radius R of the spherical surface of the lens is larger than 10 times of the wavelength of the terahertz wave, and the cross section of the lens is larger than that of the terahertz detection device. The lens is a hyper-hemispherical silicon lens made of a high-resistance intrinsic silicon material, and the substrate is a high-resistance intrinsic silicon substrate. According to the terahertz detector, the size of the light spot of the terahertz source is reduced, the size of the light spot is consistent with the size of the effective receiving area of the terahertz detector, the effective utilization of the terahertz detector for incident terahertz waves is improved, and therefore the sensitivity of the terahertz detector is improved.
Description
Technical Field
The utility model relates to an optical coupling structure for terahertz is surveyed now belongs to terahertz and surveys technical field now.
Background
The terahertz detection technology is one of core technologies in terahertz application and is an important means for developing terahertz scientific research. In the last 90 s, russian scientists Dyakonov and Shur provided a terahertz detector based on a field effect transistor, which can detect terahertz waves at room temperature. The reasonable antenna design can enhance the coupling efficiency between the transistor and the terahertz wave, and realize the high-sensitivity detection of the terahertz wave. The design of the terahertz antenna is generally related to the wavelength λ of the detected terahertz wave, and generally the total length of the antenna is about λ/2, that is, the size of the field effect transistor device integrated by the terahertz antenna commonly used by us is generally equivalent to the wavelength of the incident terahertz wave (micrometer-scale size).
Because the wavelength of the electromagnetic wave of the terahertz waveband is longer (30 mu m-3mm), the size of a light spot of the terahertz source cannot be focused to be very small due to the limitation of diffraction limit, and the radius of the light spot is in millimeter level. Therefore, the size of the light spot of the terahertz source is far larger than the effective receiving area of the terahertz detector, so that a large part of incident terahertz waves cannot be effectively utilized, the effective absorption rate of the terahertz detector to the terahertz waves is low, and the final detection sensitivity is low.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that an optical coupling structure for terahertz detection is provided to above-mentioned prior art, reduces terahertz source's facula size now, makes its effective receiving area size unanimous with terahertz detection device now, improves terahertz detector and to incident terahertz wave's effective utilization.
The utility model provides a technical scheme that above-mentioned problem adopted does: an optical coupling structure for terahertz detection mainly comprises a lens, wherein the lens is provided with a plane and a spherical surface, a substrate is arranged on the plane of the lens, a terahertz detection device is arranged on the substrate, and the terahertz detection device is arranged in the center of the plane of the lens; the terahertz waves are focused by the spherical surface of the lens and are incident on the terahertz detection device.
The spherical radius R of the lens is larger than 10 times of the wavelength of the terahertz wave, and the cross section of the lens is larger than that of the terahertz detection device.
The lens is a hyper-hemispherical silicon lens made of a high-resistance intrinsic silicon material, and the substrate is a high-resistance intrinsic silicon substrate.
Compared with the prior art, the utility model has the advantages of: the utility model provides an optical coupling structure for terahertz is surveyed, super hemisphere silicon lens further assembles incident terahertz wave, reduces the facula size of terahertz source, makes it unanimous with the effective receiving area size of terahertz detection device, has improved the energy density of terahertz source facula, has improved the effective utilization of terahertz detection device to incident terahertz wave to improve the sensitivity of terahertz detection device.
Drawings
Fig. 1 is a schematic diagram of an optical coupling structure for terahertz detection according to an embodiment of the present invention;
fig. 2 is a schematic optical path diagram of an optical coupling structure for terahertz detection according to an embodiment of the present invention;
in the figure, a terahertz detection device 1, a substrate 2 and a lens 3 are shown.
Detailed Description
The present invention will be described in further detail with reference to the following embodiments.
As shown in fig. 1, the optical coupling structure for terahertz detection in this embodiment mainly includes a hyper-hemispherical silicon lens made of high-resistance intrinsic silicon, which does not absorb terahertz waves. The lens 3 is provided with a plane and a spherical surface, the plane of the lens 3 is provided with a high-resistance intrinsic silicon substrate, a single terahertz detection device 1 with the size of 2.8 x 2.8 is prepared on the substrate 2 by utilizing a micro-nano processing technology, and the terahertz detection device 1 is tightly attached to the central position of the plane of the lens 3. By adopting a back-irradiation type assembly mode, incident terahertz waves are focused and incident on the terahertz detection device 1 after passing through the spherical surface and the high-resistance intrinsic silicon substrate of the lens 3. The terahertz wave can be reduced by one order of magnitude through the hyper-hemispherical silicon lens, the radius reaches the micron level and is equivalent to the wavelength of the incident terahertz wave, namely the size of the light spot is the same as the effective area of the terahertz detection device 1, the schematic light path diagram of the lens 3 is shown in fig. 2, and the terahertz wave is converged into a smaller light spot at the central position through the hyper-hemispherical silicon lens.
The radius R of the spherical surface of the hyper-hemispherical silicon lens is larger than 10 times of the wavelength of the terahertz wave, and the section of the lens 3 is larger than that of the terahertz detection device 1, so that the packaging is convenient. The theoretical formula for the extended thickness h of the lens 3 is: h is R/n, R is the radius of the lens 3 and n is the refractive index of the lens 3.
According to the terahertz source, the diffraction limit is broken through, the hyper-hemispherical silicon lens further converges incident terahertz waves, the size of a light spot of a terahertz source is reduced, the size of the light spot is consistent with the size of an effective receiving area of the terahertz source device 1, the energy density of the light spot of the terahertz source is improved, the effective utilization of the terahertz source device 1 to the incident terahertz waves is improved, and therefore the sensitivity of the terahertz source device 1 is improved.
In addition to the above embodiments, the present invention also includes other embodiments, and all technical solutions formed by equivalent transformation or equivalent replacement should fall within the protection scope of the claims of the present invention.
Claims (3)
1. An optical coupling structure for terahertz detection, characterized in that: the terahertz detector mainly comprises a lens (3), wherein the lens (3) is provided with a plane and a spherical surface, a substrate (2) is arranged on the plane of the lens (3), a terahertz detector (1) is arranged on the substrate (2), and the terahertz detector (1) is arranged at the center of the plane of the lens (3); the terahertz waves are focused by the spherical surface of the lens (3) and are incident on the terahertz detection device (1).
2. An optical coupling structure for terahertz detection according to claim 1, wherein: the spherical radius R of the lens (3) is larger than 10 times of the wavelength of the terahertz wave, and the cross section of the lens (3) is larger than that of the terahertz detection device (1).
3. An optical coupling structure for terahertz detection according to claim 1, wherein: the lens (3) is a hyper-hemispherical silicon lens made of a high-resistance intrinsic silicon material, and the substrate (2) is a high-resistance intrinsic silicon substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201922294454.5U CN210981521U (en) | 2019-12-19 | 2019-12-19 | Optical coupling structure for terahertz detection |
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| CN201922294454.5U CN210981521U (en) | 2019-12-19 | 2019-12-19 | Optical coupling structure for terahertz detection |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115047636A (en) * | 2022-06-20 | 2022-09-13 | 北京无线电计量测试研究所 | Gaussian terahertz broadband spatial filter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115047636A (en) * | 2022-06-20 | 2022-09-13 | 北京无线电计量测试研究所 | Gaussian terahertz broadband spatial filter |
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