CN210935016U - Microfluidic chip based on terahertz metamaterial - Google Patents

Microfluidic chip based on terahertz metamaterial Download PDF

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Publication number
CN210935016U
CN210935016U CN201921560002.0U CN201921560002U CN210935016U CN 210935016 U CN210935016 U CN 210935016U CN 201921560002 U CN201921560002 U CN 201921560002U CN 210935016 U CN210935016 U CN 210935016U
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measuring chamber
channel
pool
layer
cleaning
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CN201921560002.0U
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Chinese (zh)
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陶进杰
郎婷婷
王钢棋
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China Jiliang University
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China Jiliang University
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Abstract

The utility model provides a micro-fluidic chip based on terahertz metamaterial, wherein a sample pool, a cleaning pool, a measuring chamber and a waste liquid pool are arranged on a chip body of the micro-fluidic chip; the sample cell is communicated with the measuring chamber through an inflow channel; the cleaning pool is communicated with the measuring chamber through a cleaning channel; the waste liquid pool is communicated with the measuring chamber through an outflow channel; the measuring chamber comprises a substrate layer and a sensing layer coated on the substrate layer; the sensing layer is a metamaterial sub-wavelength metal periodic array; when the microfluidic chip is applied to the concentration measurement of adherent cells, the adherent cells flow into the measuring chamber through the inflow channel and contact with the metamaterial, and the terahertz waves vertically incident from the bottom of the high-resistance silicon are mutually coupled with the metamaterial to cause the electromagnetic induced transparent effect; the utility model has the characteristics of simple process, easy and simple to handle, can realize measuring adherent cell concentration fast.

Description

Microfluidic chip based on terahertz metamaterial
Technical Field
The utility model relates to a biological measurement technical field, concretely relates to micro-fluidic chip based on super material now.
Background
The organism is easy to be influenced by external environment, shows the change of biological signals and maintains the stability of the organism according to the change of the concentration of the organism; of course, in the field of biological engineering, measurement of cell concentration of microorganisms is a frequently encountered problem, which has a great influence on scientific research and production practice. Thus, the importance of cell concentration measurement arises naturally. The measurement method of cell concentration is largely divided into two types, one is a direct measurement method and the other is an indirect measurement method. 1. The direct measurement method is divided into 4 types from the concrete point of view: (1) the cell dry weight method is characterized in that a certain volume of culture solution is centrifuged, cells are collected, washed, dried and weighed; this method measures the concentration of all cells. (2) The principle of the microtechnology is that a microscope and a hemocytometer are utilized to measure the number of cells in a unit volume of culture solution; this method is not suitable for counting multicellular or filamentous organisms, nor is it possible to distinguish between dead and live cells. (3) The plate counting method is characterized in that a microorganism culture solution sample is serially diluted by sterile physiological saline, a certain amount of diluent is uniformly coated on a solid plate culture medium in a culture dish, and the microorganism concentration in the culture solution can be calculated according to the number of colonies growing on a plate, the volume of the coated diluent and the dilution multiple after a period of culture; the method is complicated to operate. (4) The principle of the nephelometry is that the turbidity or optical density of a culture solution is directly proportional to the concentration of cells, so that the concentration of cells in the culture solution can be measured by colorimetry; the method has large measurement error. 2. Indirect measurement, which is based on the principle that in the presence of relatively large amounts of insoluble substances in the culture medium, is possible to determine the concentration of cells by measuring macromolecular substances (e.g.proteins, RNA, DNA, etc.) in the structural cells, ensures that the content of the measurement constituents in the cells remains essentially unchanged. The method has the advantages of complex operation for measuring the concentration of the adherent cells, long time consumption, consumption of a large amount of reagents, difficulty in quantitative analysis and no universality.
Disclosure of Invention
An object of the utility model is to provide a micro-fluidic chip based on super material now, the structure is ingenious reasonable, and is easy and simple to handle, can be used for the short-term test of adherence cell concentration.
The second objective of the utility model is to provide a micro-fluidic chip based on terahertz metamaterial, preparation process is simple.
The utility model aims at providing a three micro-fluidic chip based on terahertz metamaterial has solved complicated, the time spent, need consume a large amount of reagents, be difficult to quantitative analysis, the problem that does not have the commonality of adherent cell concentration detection operation. The method simplifies the measurement operation, and has the characteristics of high efficiency, simplicity, low cost and the like.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
the first technical scheme is as follows:
a microfluidic chip based on a terahertz metamaterial comprises a chip body, wherein a sample pool, a cleaning pool, a measuring chamber and a waste liquid pool are arranged on the chip body; the sample pool is communicated with the measuring chamber through an inflow channel; the cleaning pool is communicated with the measuring chamber through a cleaning channel; the waste liquid pool is communicated with the measuring chamber through an outflow channel;
the measuring chamber comprises a base layer and a sensing layer coated on the base layer; the liquid outflow channel to be detected and the part of the basal layer which is not coated with the sensing layer are used for measuring adherent cells;
the sensing layer is a metamaterial sub-wavelength metal periodic array;
the inflow channel, the cleaning channel and the outflow channel form a micro-flow channel.
As a further improvement of the utility model, the micro-flow channels are all prepared by adopting polydimethylsiloxane materials.
As a further improvement, the structure of the microflow channel is Y-shaped.
As a further improvement of the present invention, the single periodic structure of the periodic array of the sub-wavelength metal of the sensing layer is composed of an x-direction rectangular sheet and two y-direction rectangular sheets; the periodic size Px is 120 μm, Py is 120 μm, the substrate thickness h is 50 μm, the width w1 of the rectangular piece in the x direction is 20 μm, the length L1 of the rectangular piece in the x direction is 180 μm, the lengths L2 of the rectangular pieces in the y direction are L3 85 μm, the width w2 is w3 is 20 μm, the rectangular pieces in the y direction are respectively separated from the rectangular piece in the x direction by g1 is 3 μm, g2 is 10 μm, and the thickness t of the sensing layer is 0.4 μm.
As a further improvement of the utility model, the basal layer is a high-resistance silicon material layer; the sensing layer is a sensing gold layer (a very thin titanium layer under the gold layer as an adhesive material).
The second technical scheme is as follows:
the preparation method of the microfluidic chip based on the terahertz metamaterial comprises the following steps:
s1, coating a sensing layer on the base layer:
a) drawing a photoetching plate layout by utilizing L-Edit software according to the material and size parameters of the simulation filter structure; the L-Edit software and the specific process of drawing the layout of the photoetching plate by using the L-Edit software are common knowledge in the field, and are not described herein;
b) after the photoetching plate is drawn, 5000 omega cm high-resistance silicon with the thickness of 50 micrometers is selected as a substrate;
c) cleaning and drying the high-resistance silicon wafer;
d) spin coating glue on a high-resistance silicon wafer, wherein the glue thickness is 1.68 mu m;
e) pre-baking the high-resistance silicon wafer coated with the photoresist, placing the glued high-resistance silicon wafer on a hot plate, setting the temperature of the hot plate to be 110 ℃, and setting the pre-baking time to be 100 s;
f) exposing the baked high-resistance silicon wafer by using a photoetching mask plate, wherein the optical power of a testing photoetching machine before exposure is 9mW, and the exposure time is 10 s; the specific process of exposing the baked high-resistance silicon wafer by using the photoetching mask is common general knowledge in the field, is not the key point of the invention, and is not described in detail herein;
g) postbaking the high-resistance silicon wafer, placing the exposed high-resistance silicon wafer on a hot plate, setting the temperature of the hot plate to be 100 ℃, and setting the postbaking time to be 80 s;
h) developing and drying the exposed photoresist for 90 s; the specific operation of developing the exposed photoresist is common general knowledge in the art, is not essential to the invention, and is not described herein;
i) removing the residual film glue layer after development by using a plasma photoresist remover, wherein the power of the photoresist remover is 100w, and the gluing time is 40 s; the structure and the using method of the plasma photoresist remover are common knowledge in the field, are not essential to the invention and are not described in detail herein;
j) sputtering and depositing titanium with the thickness of 20nm and gold with the thickness of 0.4 mu m on the surface of the developed pattern by using a magnetron sputtering method; the magnetron sputtering method is common knowledge in the field and is not described in detail herein;
k) and removing the photoresist on the substrate by using acetone soaking and ultrasound to obtain the metamaterial array structure on the high-resistance silicon wafer.
S2, preparing a micro-flow channel on the substrate layer:
A. obtaining a male die of the microfluidic channel structure on the SU-8 glue by utilizing a photoetching technology;
B. pouring the mixed Polydimethylsiloxane (PDMS) prepolymer on the male mold, and heating and curing;
C. peeling the cured Polydimethylsiloxane (PDMS) material from the male mold;
D. obtaining a Polydimethylsiloxane (PDMS) mould;
E. coating gelatin on the bottom of a Polydimethylsiloxane (PDMS) layer;
F. and sealing the high-resistance silicon wafer coated with the sensing structure with the polydimethylsiloxane layer with the microfluidic channel structure to obtain the microfluidic chip.
Compared with the prior art, the utility model discloses an advantage and beneficial effect as follows:
the utility model combines the metamaterial sensing technology and the micro-flow technology, greatly simplifies the step of measuring the concentration of adherent cells, thereby realizing the miniaturization and the fine measurement of equipment; the utility model discloses a micro-fluidic chip has the consumption and treats that the liquid is still less, and measuring speed is fast, easily controls advantages such as. Moreover, the measurement by the terahertz wave with small photon energy does not cause the photoionization of biological tissues; polydimethylsiloxane (PDMS) materials have low toxicity, biocompatibility and permeability to oxygen, carbon dioxide, etc., making the chip an important platform for this research.
Description of the drawings:
FIG. 1 is a schematic structural view of a microfluidic chip according to the present invention;
FIG. 2 is an enlarged view of portion A of FIG. 1;
FIG. 3 is an enlarged view of portion B of FIG. 2;
FIG. 4 is an enlarged view of a portion C of FIG. 3;
wherein: 1-a sample cell; 2-an inflow channel; 3-cleaning the pool; 4-cleaning the channel; 5-a measuring chamber; 6-an outflow channel; 7-a waste liquid pool; 10-a sensing layer; 11-a base layer; 12-terahertz waves;
FIG. 5 is a schematic diagram of the preparation process of the present invention;
Detailed Description
In order to make the technical means, creation features, achievement purposes and functions of the present invention easy to understand, the drawings in the embodiments of the present invention will be combined below to clearly and specifically describe the technical solution in the embodiments of the present invention. The described embodiments are only some of the embodiments of the present invention.
Example 1: preparation of microfluidic chip based on terahertz metamaterial
As shown in fig. 1 to 3, the structure of the microfluidic chip based on the terahertz metamaterial in this embodiment is as follows: the chip comprises a chip body, wherein a sample pool 1, a cleaning pool 3, a measuring chamber 5 and a waste liquid pool 7 are arranged on the chip body; the sample pool 1 is communicated with the measuring chamber 5 through an inflow channel 2; the cleaning pool 3 is communicated with the measuring chamber 5 through a cleaning channel 4; the waste liquid pool 7 is communicated with the measuring chamber 5 through an outflow channel 6; the measuring chamber 5 comprises a substrate layer 11 made of high-resistance silicon material and a sensing layer 10 coated on the substrate layer 11; the sensing layer 10 is a metal gold layer; the liquid to be measured flows out of the channel and the part of the substrate layer 11 which is not coated with the sensing layer 10, so that the measurement is convenient; the inflow channel 2, the cleaning channel 4 and the outflow channel 6 form a micro-flow channel; the micro-flow channels are all prepared by adopting polydimethylsiloxane materials; the whole micro-flow channel is Y-shaped.
As shown in fig. 4, the sensing layer 10 is a periodic array of meta-material sub-wavelength metal; the single periodic structure of the array consists of an x-direction rectangular sheet and two y-direction rectangular sheets; the period size Px is 120 μm, Py is 120 μm, the substrate thickness h is 50 μm, the width w1 of the rectangular piece in the x direction is 20 μm, the length L1 of the rectangular piece in the x direction is 180 μm, the lengths L2 of the rectangular pieces in the y direction are L3 and 85 μm, the width w2 and w3 are 20 μm, the rectangular pieces in the y direction are respectively separated from the rectangular piece in the x direction by g1 and g2 are 3 μm and 10 μm, and the thickness t of the sensor layer 10 is 0.4 μm.
As shown in fig. 5, the preparation of the microfluidic chip based on the terahertz metamaterial in the present embodiment includes the following steps:
s1, coating the sensing layer 10 on the base layer 11:
a) drawing a photoetching plate layout by utilizing L-Edit software according to the material and size parameters of the simulation filter structure;
b) after the photoetching plate is drawn, 5000 omega cm high-resistance silicon with the thickness of 50 micrometers is selected as a substrate;
c) cleaning and drying the high-resistance silicon wafer;
d) spin coating glue on a high-resistance silicon wafer, wherein the glue thickness is 1.68 mu m;
e) pre-baking the high-resistance silicon wafer coated with the photoresist, placing the glued high-resistance silicon wafer on a hot plate, setting the temperature of the hot plate to be 110 ℃, and setting the pre-baking time to be 100 s;
f) exposing the baked high-resistance silicon wafer by using a photoetching mask plate, wherein the optical power of a testing photoetching machine before exposure is 9mW, and the exposure time is 10 s;
g) postbaking the high-resistance silicon wafer, placing the exposed high-resistance silicon wafer on a hot plate, setting the temperature of the hot plate to be 100 ℃, and setting the postbaking time to be 80 s;
h) developing and drying the exposed photoresist for 90 s;
i) removing the residual film glue layer after development by using a plasma photoresist remover, wherein the power of the photoresist remover is 100w, and the gluing time is 40 s;
j) sputtering and depositing titanium with the thickness of 20nm and gold with the thickness of 0.4 mu m on the surface of the developed pattern by using a magnetron sputtering method;
k) and removing the photoresist on the substrate by using acetone soaking and ultrasound to obtain the metamaterial array structure on the high-resistance silicon wafer.
S2, preparing a microfluidic channel on the substrate layer 11:
A. obtaining a male die of the microfluidic channel structure on the SU-8 glue by utilizing a photoetching technology;
B. pouring the mixed Polydimethylsiloxane (PDMS) prepolymer on the male mold, and heating and curing;
C. peeling the cured Polydimethylsiloxane (PDMS) material from the male mold;
D. obtaining a Polydimethylsiloxane (PDMS) mould;
E. coating gelatin on the bottom of a Polydimethylsiloxane (PDMS) layer;
F. and sealing the high-resistance silicon wafer coated with the sensing structure with the polydimethylsiloxane layer with the microfluidic channel structure to obtain the microfluidic chip.
The above-mentioned embodiments are only intended to describe the preferred embodiments of the present invention, but not to limit the scope of the present invention, and those skilled in the art should also be able to make various modifications and improvements to the technical solution of the present invention without departing from the spirit of the present invention, and all such modifications and improvements are intended to fall within the scope of the present invention as defined in the appended claims.

Claims (5)

1. A microfluidic chip based on a terahertz metamaterial comprises a chip body and is characterized in that a sample pool (1), a cleaning pool (3), a measuring chamber (5) and a waste liquid pool (7) are formed in the chip body; the sample pool (1) is communicated with the measuring chamber (5) through an inflow channel (2); the cleaning pool (3) is communicated with the measuring chamber (5) through a cleaning channel (4); the waste liquid pool (7) is communicated with the measuring chamber (5) through an outflow channel (6); the measuring chamber (5) comprises a substrate layer (11) and a sensing layer (10) coated on the substrate layer (11); the sensing layer (10) is a metamaterial sub-wavelength metal periodic array; the inflow channel (2), the cleaning channel (4) and the outflow channel (6) form a micro-flow channel.
2. The microfluidic chip based on the terahertz metamaterial according to claim 1, wherein the microfluidic channels are all made of polydimethylsiloxane materials.
3. The microfluidic chip based on the terahertz metamaterial according to claim 1, wherein the entire microfluidic channel is Y-shaped.
4. The microfluidic chip based on terahertz metamaterial according to claim 1, wherein the single periodic structure of the periodic array of sub-wavelength metals of the sensing layer (10) is composed of one x-direction rectangular sheet and two y-direction rectangular sheets; the period size Px is 120 μm, Py is 120 μm, the substrate thickness h is 50 μm, the width w1 of the rectangular piece in the x direction is 20 μm, the length L1 of the rectangular piece in the x direction is 180 μm, the lengths L2 of the rectangular pieces in the y direction are L3 and 85 μm, the width w2 and w3 are 20 μm, the rectangular pieces in the y direction are respectively separated from the rectangular piece in the x direction by g1 and g2, and the thickness t of the sensing layer (10) is 0.4 μm.
5. The microfluidic chip based on the terahertz metamaterial according to claim 4, wherein the substrate layer (11) is a high-resistance silicon material layer; the sensing layer (10) is a metal gold layer.
CN201921560002.0U 2019-09-19 2019-09-19 Microfluidic chip based on terahertz metamaterial Expired - Fee Related CN210935016U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111790460A (en) * 2019-09-19 2020-10-20 中国计量大学 Microfluidic chip based on terahertz metamaterial, preparation method and application thereof
CN113295645A (en) * 2021-05-20 2021-08-24 天津工业大学 Terahertz hybrid network detection chip based on clover type

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111790460A (en) * 2019-09-19 2020-10-20 中国计量大学 Microfluidic chip based on terahertz metamaterial, preparation method and application thereof
CN111790460B (en) * 2019-09-19 2023-08-04 中国计量大学 Microfluidic chip based on terahertz metamaterial, preparation method and application thereof
CN113295645A (en) * 2021-05-20 2021-08-24 天津工业大学 Terahertz hybrid network detection chip based on clover type

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