CN210897974U - Sample frame suitable for semiconductor laser optical frequency comb - Google Patents
Sample frame suitable for semiconductor laser optical frequency comb Download PDFInfo
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- CN210897974U CN210897974U CN201922232091.2U CN201922232091U CN210897974U CN 210897974 U CN210897974 U CN 210897974U CN 201922232091 U CN201922232091 U CN 201922232091U CN 210897974 U CN210897974 U CN 210897974U
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Abstract
The utility model relates to a sample frame suitable for semiconductor laser light frequency comb belongs to semiconductor photoelectric device technical field. The device comprises a sample base and a sample pressing block, wherein a convex block is arranged on the sample base, the sample pressing block and the convex block are fixedly connected in an involutory way, arc-shaped grooves are respectively arranged on the involutory surfaces of the convex block and the sample pressing block, and two corresponding arc-shaped grooves are involutory to form an object placing hole, so that a high-frequency coaxial cable is fixed in the object placing hole; the sample base is provided with a heat sink, the heat sink is provided with lasers which correspond to the high-frequency coaxial cables one by one, and the high-frequency coaxial cables are arranged close to the laser resonant cavity; the sample base is provided with an installation block, and the sample base is fixed on the cold head through the installation block. The application not only realizes the stability of the optical frequency comb; the semiconductor laser can work normally at low temperature; and has good low-temperature low-resistance characteristics, and can be used as a lower electrode terminal of a semiconductor laser.
Description
Technical Field
The utility model relates to a sample frame suitable for semiconductor laser light frequency comb belongs to semiconductor photoelectric device technical field.
Background
An optical comb is a broad spectrum coherent light source consisting of a series of equally spaced and highly stable frequency lines. The optical frequency comb technology has great application potential in the aspects of substance spectrum detection, optical atomic clocks, long-distance communication, laser radar and the like. In addition, the double optical comb spectrum system based on the optical frequency comb technology is an effective scheme for realizing rapid spectrum detection for a spectrum region (such as a terahertz waveband) lacking a high-efficiency high-speed detector.
The Terahertz Quantum Cascade Laser (THz QCL) is an important electrically pumped Terahertz radiation source and has the characteristics of high energy conversion efficiency, high response speed, small volume, high integration level, high radiation power and the like. The THz QCL optical frequency comb and double optical comb technology has great promotion effect on the aspects of substance terahertz spectrum detection, ultrafast biomolecular science, ultrafast surface chemistry, ultrafast condensed state material physics and the like. The operating temperature of the THz QCL is liquid helium temperature, which puts severe requirements on the aspects of laser installation stability, heat dissipation performance, high-frequency signal transmission and the like.
Currently, the main way to realize the operation of the optical frequency comb is to use active or passive modulation, so that the optical frequency comb becomes a mode-locked laser. The active mode locking mode mainly based on radio frequency injection is widely applied to the optical frequency comb of the semiconductor laser, so that parasitic capacitance and inductance are required to be introduced into the semiconductor laser as little as possible in packaging, low-loss and high-efficiency transmission of high-frequency signals between a coaxial cable and the laser is guaranteed, and impedance matching is achieved. However, due to the complexity of the laser working environment, especially for semiconductor lasers working at low temperature (such as terahertz quantum cascade lasers working at liquid helium temperature), the stability of the coupling between the coaxial cable and the laser is especially important for the working state of the optical frequency comb.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a sample frame suitable for semiconductor laser optical frequency comb is provided to above-mentioned prior art, under low temperature operational environment, guarantees the stability of high frequency coaxial cable and laser instrument coupling, realizes stable optical frequency comb.
The utility model provides a technical scheme that above-mentioned problem adopted does: a sample holder suitable for a semiconductor laser optical frequency comb comprises a sample base and a sample pressing block, wherein a convex block is arranged on the sample base, the sample pressing block and the convex block are fixedly connected in an involutory mode, arc-shaped grooves are respectively arranged on involutory surfaces of the convex block and the sample pressing block, and two corresponding arc-shaped grooves form an object placing hole for arranging a high-frequency coaxial cable after involutory to realize that the high-frequency coaxial cable is fixed in the object placing hole; the sample base is provided with a heat sink, the heat sink is provided with lasers which correspond to the high-frequency coaxial cables one by one, and the high-frequency coaxial cables are arranged close to the laser resonant cavity; the sample base is provided with an installation block, and the sample base is fixed on the cold head through the installation block.
The sample base, the sample pressing block and the heat sink are respectively oxygen-free copper structural members, and the surfaces of the sample base, the sample pressing block and the heat sink are respectively provided with a nickel plating layer and a gold plating layer.
The thickness of the nickel plating layer is 1-9 mu m, and the thickness of the gold plating layer is larger than or equal to 2 mu m.
The thickness of the heat sink is 2-5 mm.
Indium sheets are respectively arranged on the upper surface and the lower surface of the heat sink.
The distance between the exposed central copper conductor of the high-frequency coaxial cable and the laser resonant cavity is 2-5 mm, and the high-frequency coaxial cable is used for injecting and extracting radio-frequency signals.
And a microstrip line is arranged between the laser and the exposed central copper conductor of the high-frequency coaxial cable and is used for realizing impedance matching between the laser and the high-frequency coaxial cable.
Compared with the prior art, the utility model has the advantages of: a high-frequency coaxial cable is fixed with a sample pressing block through a sample base, so that the firmness of the high-frequency coaxial cable is guaranteed, the coupling stability of the high-frequency coaxial cable and a laser is guaranteed, and the stability of an optical frequency comb is realized; the sample base, the sample pressing block and the heat sink which are made of oxygen-free copper materials ensure that heat generated in the working process of the laser can be taken away quickly, and the normal work of the semiconductor laser at low temperature is ensured; and has good low-temperature low-resistance characteristics, and can be used as a lower electrode terminal of a semiconductor laser.
Drawings
Fig. 1 is a schematic diagram of a sample holder suitable for an optical frequency comb of a semiconductor laser according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a semiconductor laser dual optical comb sample holder;
in the figure, 1 sample base, 1.1 lug, 1.2 arc-shaped groove, 2 sample pressing blocks, 3 mounting blocks, 4 heat sinks, 5 lasers and 6 microstrip lines are arranged.
Detailed Description
The present invention will be described in further detail with reference to the following embodiments.
As shown in fig. 1, the sample holder suitable for the optical frequency comb of the semiconductor laser in this embodiment includes a sample base 1 and a sample pressing block 3, a vertically arranged mounting block 3 is disposed on a side surface of the sample base 1, and the mounting block 3 is fixed on a JANIS ST-100 low-temperature cold head, so that the sample base 1 is fixed on the JANIS ST-100 low-temperature cold head. Be equipped with lug 1.1 on the sample base 1, set up the screw hole on lug 1.1 and the sample briquetting 2 respectively, sample briquetting 2 and lug 1.1 pass through the threaded rod to closing fixed connection, the arc wall 1.2 that is equipped with respectively on lug 1.1 and the 2 involutions of sample briquetting, two arc walls 1.2 constitute the thing hole of putting that is used for setting up high frequency coaxial cable after closing, the diameter of putting the thing hole and the diameter phase-match of high frequency coaxial cable, it is downthehole to realize that high frequency coaxial cable is fixed in and puts the thing. Be equipped with heat sink 4 on the sample base 1, heat sink 4 upper surface and lower surface are equipped with the indium piece respectively, and heat sink 4 passes through screw rod and sample base 1 fixed connection. The heat sink 4 is provided with a laser 5, and the heat sink 4 and the laser 5 are adhered through a high-temperature hot-melt indium sheet, so that the laser 5 is fixedly connected with the sample base 1. The bare central copper conductor of the high frequency coaxial cable is arranged close to the resonant cavity of the laser 5. When the impedance between the laser 5 and the high-frequency coaxial cable is not matched, a microstrip line 6 is arranged between the laser 5 and the high-frequency coaxial cable, one end of the microstrip line 6 is connected with the laser 5 through a gold thread, and the other end of the microstrip line 6 is directly contacted with the exposed central copper conductor of the high-frequency coaxial cable in a pressing mode, so that the impedance matching between the laser 5 and the high-frequency coaxial cable is realized.
The sample base 1, the sample pressing block 2 and the heat sink 4 are structural members made of oxygen-free copper materials respectively, the surfaces of the sample base 1, the sample pressing block 2 and the heat sink 4 are polished with a nickel plating layer and a gold plating layer respectively, and the thickness of the nickel plating layer is 1-9 mu m; the thickness of the gold plating layer is larger than or equal to 2 mu m, and the thickness of the heat sink is 2-5 mm.
As shown in fig. 2, 2 arc-shaped grooves 1.2 arranged in parallel may also be formed on the projection 1.1 and the sample pressing block 2, so that 2 object placing holes are formed after the sample pressing block 2 and the projection 1.1 are fixed in a involution manner, and the 2 object placing holes are respectively provided with a high-frequency coaxial cable, thereby realizing the simultaneous fixation of two high-frequency coaxial cables. At this time, 2 lasers 5 are arranged on the sample base 1, and 2 high-frequency coaxial cables respectively correspond to the respective lasers 5 to form a sample holder of the semiconductor laser double-optical comb.
The modulation frequency of the terahertz quantum cascade laser (THz QCL) used in the present embodiment is 6GHz, and the operating temperature is 20K, at which the characteristic impedance of the terahertz quantum cascade laser (THz QCL) is 20 Ω. Continuous flow liquid helium is used as a cooling mode, and the working environment is provided by a JANIS ST-100 low-temperature cold head.
As shown in FIG. 1, the sample base 1, the sample compact 2 and the heat sink 4 are made of oxygen-free copper, and the surfaces thereof are polished, wherein the thickness of the nickel-plated layer is 5 μm and the thickness of the gold-plated layer is 2 μm. The mounting block 3 is fixedly connected with a JANIS ST-100 low-temperature cold head in a threaded rod mode. The sample base 1 was 3mm thick, 56mm long and 21mm wide. The concave arc-shaped groove on the bump 1.1 is matched with the concave arc-shaped groove on the sample pressing block 2 to form an object placing hole with the diameter of 4.6mm, and the object placing hole is matched with a high-frequency coaxial cable injected by radio frequency. Locate the high frequency coaxial line cable and put the thing downthehole to through M2 threaded rod with lug 1.1 and sample briquetting 2 fixed connection, guaranteed the fastness of high frequency coaxial line cable under the low temperature.
The high-frequency coaxial cable is fixed with the sample pressing block 2 through the convex block 1.1, so that the firmness of the high-frequency coaxial cable is guaranteed, the coupling stability of the high-frequency coaxial cable and a laser is guaranteed, and the stability of the optical frequency comb is realized; the sample base 1, the sample pressing block 2 and the heat sink 4 are made of oxygen-free copper materials, so that heat generated in the working process of the laser 5 can be rapidly taken away, and the semiconductor laser can work normally at low temperature; and has good low-temperature low-resistance characteristics, and can be used as a lower electrode terminal of a semiconductor laser.
In addition to the above embodiments, the present invention also includes other embodiments, and all technical solutions formed by equivalent transformation or equivalent replacement should fall within the protection scope of the claims of the present invention.
Claims (7)
1. A sample holder suitable for a semiconductor laser optical frequency comb is characterized in that: the device comprises a sample base (1) and a sample pressing block (2), wherein a convex block (1.1) is arranged on the sample base (1), the convex block (1.1) and the sample pressing block (2) are fixedly connected in an involutive manner, arc-shaped grooves (1.2) are respectively arranged on involutive surfaces of the convex block (1.1) and the sample pressing block (2), and two corresponding arc-shaped grooves (1.2) are involutive to form a placement hole for arranging a high-frequency coaxial cable, so that the high-frequency coaxial cable is fixed in the placement hole; a heat sink (4) is arranged on the sample base (1), lasers (5) which are in one-to-one correspondence with the high-frequency coaxial cables are arranged on the heat sink (4), and the high-frequency coaxial cables are arranged close to resonant cavities of the lasers (5); the sample base (1) is provided with an installation block (3), and the sample base (1) is fixed on the cold head through the installation block (3).
2. The sample holder as claimed in claim 1, wherein the sample holder is adapted for use in an optical frequency comb of a semiconductor laser, and comprises: the sample base (1), the sample pressing block (2) and the heat sink (4) are oxygen-free copper structural members respectively, and the surfaces of the sample base, the sample pressing block and the heat sink are respectively provided with a nickel plating layer and a gold plating layer.
3. The sample holder as claimed in claim 2, wherein the sample holder is adapted for use in an optical frequency comb of a semiconductor laser, and comprises: the thickness of the nickel plating layer is 1-9 mu m, and the thickness of the gold plating layer is not less than 2 mu m.
4. A sample holder suitable for an optical frequency comb of a semiconductor laser as claimed in claim 1 or 2, wherein: the thickness of the heat sink (4) is 2-5 mm.
5. The sample holder as claimed in claim 4, wherein the sample holder is adapted for use in an optical frequency comb of a semiconductor laser, and comprises: indium sheets are respectively arranged on the upper surface and the lower surface of the heat sink (4).
6. The sample holder as claimed in claim 1, wherein the sample holder is adapted for use in an optical frequency comb of a semiconductor laser, and comprises: the distance between the exposed central copper conductor of the high-frequency coaxial cable and the resonant cavity of the laser (5) is 2-5 mm, and the high-frequency coaxial cable is used for injecting and extracting radio-frequency signals.
7. The sample holder as claimed in claim 6, wherein the sample holder is adapted for use in an optical frequency comb of a semiconductor laser, and comprises: and a microstrip line (6) is arranged between the laser (5) and the exposed central copper conductor of the high-frequency coaxial cable and is used for realizing impedance matching between the laser and the high-frequency coaxial cable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922232091.2U CN210897974U (en) | 2019-12-13 | 2019-12-13 | Sample frame suitable for semiconductor laser optical frequency comb |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922232091.2U CN210897974U (en) | 2019-12-13 | 2019-12-13 | Sample frame suitable for semiconductor laser optical frequency comb |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210897974U true CN210897974U (en) | 2020-06-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922232091.2U Active CN210897974U (en) | 2019-12-13 | 2019-12-13 | Sample frame suitable for semiconductor laser optical frequency comb |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210897974U (en) |
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2019
- 2019-12-13 CN CN201922232091.2U patent/CN210897974U/en active Active
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