CN210849747U

CN210849747U - Third-generation semiconductor material polishing system

Info

Publication number: CN210849747U
Application number: CN201921719613.5U
Authority: CN
Inventors: 王永成
Original assignee: Shanghai Leading Semiconductor Technology Development Co ltd
Current assignee: Shanghai Leading Semiconductor Technology Development Co ltd
Priority date: 2019-10-11
Filing date: 2019-10-11
Publication date: 2020-06-26
Anticipated expiration: 2029-10-11

Abstract

The utility model discloses a third generation semiconductor material polishing system, its structure includes pillar, operation platform, polishing pad, waste water collecting region, burnishing device, connecting pipe and high-pressure squirt, the utility model discloses a third generation semiconductor material polishing system has been set up, third generation semiconductor material, polishing time is long, 4 to 6 hours in succession, the centre is not maintained, the polishing pad is not maintained, will directly scrap, new technology pressure dish pushes down ceramic disc, set up vacuum adsorption on the pressure dish, in the course of working, ceramic disc is inhaled to the pressure dish, near operation platform sets up high-pressure squirt, it washs to aim at the polishing pad, and it is convenient to use, guarantees polishing effect, improves work efficiency.

Description

Third-generation semiconductor material polishing system

Technical Field

The utility model relates to a wafer polishing system technical field, concretely relates to third generation semiconductor material polishing system.

Background

The semiconductor material is a kind of electronic material with semiconductor performance and can be used for making semiconductor device and integrated circuit, the wafer is the silicon wafer used for making silicon semiconductor integrated circuit, because its shape is round, so called wafer, can be made into various circuit element structures on the silicon wafer, and become the integrated circuit products with specific electric function, the polishing is to utilize the mechanical, chemical or electrochemical action, make the surface roughness of the work piece reduce, in order to obtain the bright, processing method to level the surface, it is to utilize polishing tool and abrasive particle or other polishing medium to carry on the modification processing to the surface of the work piece, the traditional wafer polishing, by polishing disk, polishing pad and pressure disk, the ceramic disk is pasted with the wafer, there is polishing liquid on the periphery.

When the polishing system needs to be used, since the polishing solution is generally colloidal silica, which is easy to crystallize, and the higher the temperature is, the faster the crystallization speed is, heat is generated after polishing, and the heat is easy to permeate into the polishing pad and crystallize, which causes the polishing pad to become hard and smooth, reduces the polishing efficiency, and requires manual brushing and correction of the polishing pad.

SUMMERY OF THE UTILITY MODEL

Technical problem to be solved

In order to overcome the defects of the prior art, a third-generation semiconductor material polishing system is provided, which solves the problems that when the polishing system needs to be used, due to the fact that polishing liquid is generally colloidal silica and is easy to crystallize, the higher the temperature is, the faster the crystallization speed is, heat is generated after polishing and is easy to permeate into a polishing pad and crystallize, the polishing pad is hardened and becomes smooth, the polishing efficiency is reduced, and the polishing pad needs to be manually brushed and corrected.

(II) technical scheme

The utility model discloses a following technical scheme realizes: the utility model provides a third generation semiconductor material polishing system, including pillar, operation platform, polishing pad, waste water collecting region, burnishing device, connecting pipe and high-pressure squirt, the pillar passes through bolt and operation platform locking fixed, operation platform top face bonds with the polishing pad each other, waste water collecting region imbeds in operation platform top middle part, operation platform top face is provided with burnishing device, operation platform top right-hand member link up each other and the seam is sealed with high-pressure squirt through the connecting pipe, burnishing device comprises spliced pole, connection pad, pressure disc, vacuum chamber, ceramic dish and wafer, spliced pole bottom face closely fixes with the connection pad, the connection pad passes through bolt and pressure disc locking fixed, pressure disc bottom middle part is provided with the vacuum chamber, vacuum chamber bottom end face is connected with the ceramic dish, the bottom end face of the ceramic disc is bonded and matched with a wafer through strong glue, and the wafer is in contact with the top end face of the polishing pad.

Furthermore, the connecting pipes and the high-pressure water guns are arranged in two groups and are distributed in parallel.

Further, the polishing pad is in the shape of a hollow ring, and the surface of the polishing pad is smooth.

Furthermore, the pillar is cylindrical in shape, and two screw holes are formed in the top end face of the pillar.

Furthermore, four screw holes are formed in the top end face of the connecting disc, and the diameter of each screw hole is 8 MM.

Further, the pressure disc is umbrella-shaped, and the outer diameter surface is smooth.

Further, the inner wall of the waste water collecting area is provided with a waterproof film, and the thickness of the waterproof film is 2 MM.

(III) advantageous effects

Compared with the prior art, the utility model, following beneficial effect has:

in order to solve the problem that when a polishing system needs to be used, since polishing liquid is generally colloidal silica, the crystallization is easy, the temperature is higher, the crystallization speed is higher, heat is generated after polishing, the heat is easy to permeate into the polishing pad and crystallize, the polishing pad is caused to become hard and smooth, the polishing efficiency is reduced, and the polishing pad needs to be artificially brushed and corrected.

Drawings

Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:

fig. 1 is a schematic structural view of the present invention;

FIG. 2 is a schematic view of the front view of the inner part of the present invention;

FIG. 3 is a schematic structural view of the polishing apparatus of the present invention;

fig. 4 is a schematic view of the front view of the polishing apparatus according to the present invention.

In the figure: the device comprises a support column-1, an operation platform-2, a polishing pad-3, a wastewater collecting region-4, a polishing device-5, a connecting pipe-6, a high-pressure water gun-7, a connecting column-51, a connecting disc-52, a pressure disc-53, a vacuum bin-54, a ceramic disc-55 and a wafer-56.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

Referring to fig. 1, 2, 3 and 4, the present invention provides a third generation semiconductor material polishing system: the polishing device 5 comprises a connecting post 51, a connecting disc 52, a pressure disc 53, a vacuum chamber 54, a ceramic disc 55 and a wafer 56, wherein the bottom end face of the connecting post 51 is tightly fixed with the connecting disc 52, the connecting disc 52 is locked and fixed with the pressure disc 53 through bolts, the vacuum chamber 54 is connected with the ceramic disc 55, the bottom end face of the ceramic disc 55 is bonded and matched with the wafer 56 through strong glue, the wafer 56 and the top end surface of the polishing pad 3 are in contact with each other.

Wherein, the connecting pipe 6 and the high-pressure squirt 7 are provided with two groups and are distributed in parallel, thereby ensuring the cleaning range.

The polishing pad 3 is in a hollow ring shape, has a smooth surface, and is suitable in shape and convenient to operate.

Wherein, the pillar 1 shape is the cylinder to the top terminal surface is provided with two screws, and stability is strong, is convenient for support.

The top end face of the connecting disc 52 is provided with four screw holes, and the diameter of each screw hole is 8MM, so that locking and fixing are facilitated.

The pressure disc 53 is umbrella-shaped, and the outer diameter surface is smooth, so that the pressure disc is suitable in shape and convenient to operate.

The inner wall of the waste water collecting region 4 is provided with a waterproof film, the thickness of the waterproof film is 2MM, the thickness is moderate, and the sealing performance is guaranteed.

The working principle is as follows: the third-generation semiconductor material polishing system is placed at a proper position, the connecting column 51 is connected with external rotating equipment, when materials needing to be polished are polished, the polishing time is long and is continuous for 4 to 6 hours, maintenance is not carried out in the middle, the polishing pad 3 is not maintained and can be directly scrapped, a new process pressure disc 53 presses a ceramic disc 55, a vacuum chamber 54 is arranged on the pressure disc 53 for vacuum adsorption, the ceramic disc is sucked by the pressure disc 53 in the processing process, a high-pressure water gun 7 is arranged near an operating platform, water is introduced to the high-pressure water gun 7 through a connecting pipe 6 to clean the polishing pad 3, and redundant water after cleaning is discharged into a waste water collecting area 4 for collection, so that the use is convenient and fast, the polishing effect is ensured, the working efficiency is improved, and under the condition that the polishing system needs to be used, because the polishing solution is colloidal silica generally, easy crystallization, the temperature is higher, the crystallization rate is faster, produce the heat after the polishing, permeate polishing pad 3 easily and the crystallization, lead to polishing pad 3 sclerosis to become smooth, reduce polishing efficiency, need artificial problem of scrubbing the correction with polishing pad 3, alright start external rotating equipment and rotate through connection pad 52 on spliced pole 51, connection pad 52 top end face is provided with four screws, and the screw diameter is 8MM, be convenient for lock fixedly, drive burnishing device 5 and carry out polishing work.

The basic principle and the main characteristics of the utility model and the advantages of the utility model have been shown and described above, and the utility model discloses the standard part that uses all can purchase from the market, and dysmorphism piece all can be customized according to the record of the description with the drawing, and the concrete connection mode of each part all adopts conventional means such as ripe bolt rivet among the prior art, welding, and machinery, part and equipment all adopt prior art, conventional model, and conventional connection mode in the prior art is adopted in addition to circuit connection, and the details are not repeated here.

It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.

Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.

Claims

1. A third generation semiconductor material polishing system, characterized by: comprises a support column (1), an operation platform (2), a polishing pad (3), a wastewater collecting area (4), a polishing device (5), a connecting pipe (6) and a high-pressure water gun (7), wherein the support column (1) is locked and fixed with the operation platform (2) through bolts, the top end surface of the operation platform (2) is bonded with the polishing pad (3), the wastewater collecting area (4) is embedded in the middle of the top end of the operation platform (2), the polishing device (5) is arranged on the top end surface of the operation platform (2), the top right end of the operation platform (2) is communicated with the high-pressure water gun (7) through the connecting pipe (6) and sealed by a seam, the polishing device (5) is composed of a connecting column (51), a connecting disc (52), a pressure disc (53), a vacuum bin (54), a ceramic disc (55) and a wafer (56), and the bottom end surface of the connecting column (51) is closely fixed, the polishing pad is characterized in that the connecting disc (52) is locked and fixed with the pressure disc (53) through bolts, a vacuum bin (54) is arranged in the middle of the bottom end of the pressure disc (53), the bottom end face of the vacuum bin (54) is connected with the ceramic disc (55), the bottom end face of the ceramic disc (55) is in bonding fit with the wafer (56) through super glue, and the wafer (56) is in contact with the top end face of the polishing pad (3).

2. A third generation semiconductor material polishing system according to claim 1, wherein: the connecting pipes (6) and the high-pressure water guns (7) are arranged in two groups and are distributed in parallel.

3. A third generation semiconductor material polishing system according to claim 1, wherein: the polishing pad (3) is in a hollow ring shape, and the surface of the polishing pad is smooth.

4. A third generation semiconductor material polishing system according to claim 1, wherein: the pillar (1) is cylindrical in shape, and two screw holes are formed in the top end face of the pillar.

5. A third generation semiconductor material polishing system according to claim 1, wherein: the top end face of the connecting disc (52) is provided with four screw holes, and the diameter of each screw hole is 8 MM.

6. A third generation semiconductor material polishing system according to claim 1, wherein: the pressure disc (53) is umbrella-shaped, and the outer diameter surface is smooth.

7. A third generation semiconductor material polishing system according to claim 1, wherein: the inner wall of the waste water collecting region (4) is provided with a waterproof film, and the thickness of the waterproof film is 2 MM.