CN210803594U - Novel radiation measurement chip based on slow light effect - Google Patents
Novel radiation measurement chip based on slow light effect Download PDFInfo
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- CN210803594U CN210803594U CN201920548302.0U CN201920548302U CN210803594U CN 210803594 U CN210803594 U CN 210803594U CN 201920548302 U CN201920548302 U CN 201920548302U CN 210803594 U CN210803594 U CN 210803594U
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Abstract
The utility model discloses a novel radiometric chip based on slow light effect. The chip is divided into two parts, one part is a slow light wave absorbing structure and is divided into an upper layer and a lower layer, the upper layer is composed of units which are periodically arranged, the periodic unit structure is composed of a plurality of layers of pyramid structures which are formed by alternately overlapping square metal layers and wave absorbing medium layers with different sizes in the height direction and are narrow at the top and wide at the bottom, each periodic unit structure is the same, the lower layer is a metal substrate, and the other part is an infrared imager. The utility model discloses a simpler cheap chip can change the radiating condition of messenger's work that the structure size can be very convenient at different wave bands at irradiators such as wide-angle within range rapid survey cell-phone simultaneously, has improved the efficiency and the cost of cell-phone radiation test greatly.
Description
Technical Field
The utility model belongs to electromagnetic wave absorption and radiation control field especially relate to a novel radiometric chip based on slow light effect.
Background
At present, people usually measure the electromagnetic power absorbed or consumed by human tissues with unit mass, namely Specific Absorption Rate (SAR) is used for evaluating the electromagnetic radiation of a radiation source, but generally the measurement of the SAR needs professional instruments, is very complex, has a limited test frequency range, generally reaches 6GHz, and cannot realize the absorption and measurement of a novel 5G mobile phone (the radiation frequency is about 28 GHz).
SUMMERY OF THE UTILITY MODEL
Not enough to prior art, the utility model discloses aim at solving the comparatively complicated problem of cell-phone radiation security test, provide a novel radiometric chip based on slow light effect. This chip can the efficient absorption radiation wave of wide-angle, marks the heat effect of sample under the electromagnetic radiation influence through infrared thermal imager, can be fast accurate survey the security of radiation source, only need change the size of structure, just can change the operating frequency of chip, and then realize not being limited to 5G (radiation frequency about 28GHz), like the survey of radiation sources such as 4G, 3G cell-phones.
In order to solve the problems, a radiation measurement chip based on a slow-wave effect is provided by utilizing a slow-wave principle, wave-absorbing media with different sizes and capable of exciting slow-wave modes with different frequencies are stacked to form a pyramid structure, wide-frequency and large-angle radiation strong absorption is realized, the local temperature of the structure is increased due to radiation absorption, the temperature is increased, infrared radiation is changed due to the temperature increase, the temperature is measured through an infrared thermal imager, the safety of a radiation source can be measured simply, conveniently, rapidly and accurately, and the radiation measurement chip has the advantage that the structure size can be changed to work in different wave bands.
The purpose of the utility model is realized through the following technical scheme: the utility model provides a novel radiation measurement chip based on slow light effect, the chip divide into two parts, and one part is the wave-absorbing structure, and its upper strata is constituted by the multilayer pyramid of arranging periodically, and the lower floor is the metal substrate, and another part is the test part, carries out the infrared thermal imager that tests to structure infrared performance promptly.
Furthermore, the chip is divided into two parts, one part is a slow light wave-absorbing structure and is divided into an upper layer and a lower layer, the upper layer is composed of units which are periodically arranged, the period is p (p is 2-4mm), and the periodic unit structure is formed by alternately superposing square metal layers and wave-absorbing medium layers with different sizes in the z direction (height direction)The multilayer pyramid structure with narrow lower part and wide upper part has the same periodic unit structure, and the side length of the bottom layer structure is a1(3mm≤a1P) or less), the side length of the topmost layer structure is a2(a2Not more than 2.35mm) and the thickness of the square metal is tm(tmLess than or equal to 0.035mm), and the thickness of the wave-absorbing medium layer is td(tdNot less than 0.2mm), the number of pyramid layers is n (n is not less than 10), wherein the slow light cut-off frequency of the slow light wave absorbing structure is near the central frequency (28GHz), so that the electromagnetic waves near the central frequency are respectively and strongly localized in each layer of the pyramid structure; the lower layer of the slow light wave-absorbing structure is a metal substrate with the thickness tsub(tsubNot less than 0.2mm), and the other part is an infrared imager.
The equivalent dielectric constant of the slow wave structure meets the characteristics of the hyperbolic dispersion metamaterial, so that excellent wave absorbing performance can be realized, and the property cannot be realized by materials existing in the nature.
Furthermore, in the periodically arranged structures, the side length a of the bottommost structure and the topmost structure is changed1And a2The frequency of the slow wave effect formed at different positions can be adjusted, and the working frequency, a, of the chip can be adjusted1The larger the wave absorption frequency, the smaller the corresponding minimum wave absorption frequency, a2The smaller the corresponding maximum wave absorbing frequency is.
Furthermore, in the periodically arranged structure, increasing the pyramid layer number n can enhance the absorption rate of the structure, and adjust a1a2The wider the obtained working frequency band is, the more the pyramid layer number n is needed to ensure that the whole pyramid structure can effectively support the slow wave in the working frequency band range, and further the absorption rate is close to 1 in the whole working frequency band (26-30 GHz).
Further, the periodically arranged structure is obtained by numerical simulation calculation through commercial software CST microwave working chamber, a frequency domain calculation mode is adopted, TEM electromagnetic waves are normally incident to the surface of the structure along the z direction, the x direction and the y direction of the structure are set as periodic boundary conditions, the substrate is set as a thicker metal plate, and the transmittance of the electromagnetic waves is basically 0.
The reflectance R (ω) is related to the S parameter: r (ω) ═ S11(ω)|2
The microwave absorbing structure absorbance a (ω) can be obtained by the formula (1):
A(ω)＝1-R(ω)＝1-|S11(ω)|2(1)
furthermore, the infrared thermal imager consists of an imaging objective lens and an infrared detector, and the structure can increase the temperature through absorbing the radiation of the radiator and can pass through Pnet＝Prad(T)-Patm(Tamb) Is determined in which PnetFor net absorbed power, Prad(T) is the power of the absorbed radiation of the radiator, Patm(Tamb) Is the irradiance of the surrounding environment. Further by stefan-boltzmann law: w ═ epsilon σ T4The infrared thermal imager can indirectly identify the safety of the space distribution of the corresponding radiation source by detecting the infrared energy in a non-contact manner and converting the infrared energy into a thermal image or a temperature value based on the principle.
Further, the multilayer pyramid structure is formed by alternately distributing high-loss dielectric layers and metal material layers, the loss tangent angle of the high-loss dielectric layers is more than 0.02, and the electric conductivity of the metal material layers is more than 107S/m。
Further, the high-loss dielectric layer is an epoxy glass cloth laminated board (FR-4).
Further, the metal material layer is copper (Cu).
Further, the substrate layer has a conductivity of more than 107S/m metal material.
Further, the metal material layer is copper (Cu).
Furthermore, the infrared imager consists of an imaging objective lens and an infrared detector, has the thermal sensitivity of more than 0.1 ℃, the imaging resolution of more than 0.01mm and works in a far infrared (8-14 μm) wave band.
Further, the infrared imager is FLIR E8.
The utility model discloses beneficial effect as follows:
(1) the utility model discloses a complicated difficult problem of irradiator security detection has been solved to simple periodic multilayer pyramid structure, has realized the quick accurate judgement to the cell-phone radiation signal security, compares in traditional specific absorption rate test method, has simple efficient advantage.
(2) The utility model discloses a test effect is insensitive to the angle, can all have good detection effect at very wide angle within range.
(3) The utility model discloses a broadband wave-absorbing effect is insensitive to the polarization, can all realize fine detection effect to the radiation source of arbitrary polarization state.
(4) The utility model discloses a structure is very nimble, can adjust the position of absorption frequency channel through changing the structure size, makes its work radiate the frequency channel wantonly.
Drawings
Fig. 1 is a schematic structural diagram of a novel radiation measurement chip based on slow light effect.
Fig. 2 is a schematic diagram of the overall structure of a novel radiation measurement chip based on slow light effect.
FIG. 3 shows the radiation lines of the chip at different temperatures.
FIG. 4 is a graph showing the absorption curve of the chip at and around 28 GHz.
FIG. 5 is a graph of the electric field strength (left) and magnetic field strength (right) at 28GHz for the chip.
FIG. 6 is an absorption curve of a chip under different polarization states.
Fig. 7 is an absorption curve of a chip at different incident angles.
Shown in the figure: 1-metal, 2-high loss medium, 3-substrate.
Detailed Description
The present invention will be further explained with reference to the drawings and examples.
As shown in fig. 1, the utility model relates to a new lamp based on slow light effectThe structure of the radiation measuring chip is shown schematically. The novel radiation measurement chip based on the slow light effect is composed of periodic unit structures, each unit structure is composed of a pyramid structure with the same size, and the pyramid is formed by alternately stacking wave-absorbing media and metal in the same size in the x direction and the y direction in the z direction. Specifically, the substrate is a metal plate with a thickness of about tsubThe metal plate is used for inhibiting the transmission of electromagnetic waves, the metal plate is provided with a pyramid structure which is periodically arranged, the period is p, the unit structure is a pyramid structure which is formed by alternately arranging a wave-absorbing medium layer and a metal layer, wherein the thickness of the wave-absorbing medium layer is tdThe dielectric constant is large, the loss tangent angle is more than 0.02, and the thickness of the metal layer is tmPyramid bottom layer size of a1The top layer has a size of a2The number of layers is n.
As shown in fig. 2 is the utility model relates to a novel radiation measurement chip's overall structure schematic diagram based on slow light effect, the radiation source is located directly over the chip, and the electromagnetic wave of radiation-out is absorbed by the chip, and the corresponding position temperature of chip rises, and by stefin-boltzmann's law, the object temperature is higher more, and infrared radiant energy is more (as shown in fig. 3), and based on this, infrared thermal imager surveys infrared energy and converts it into thermal image or temperature value. In order to prevent the chip from overheating and the heat from being conducted to the surroundings, intermittent measurement can be used in a short time, and by comparing with a limit safety threshold, it can be determined whether the radiation source is within a safe range.
The structure can be designed by using a commercial software CST microwave working chamber and adopting a frequency domain calculation mode, TEM electromagnetic waves are normally incident to the surface of the structure along the z direction, the x direction and the y direction of the structure are set as periodic boundary conditions, the substrate is set as a thicker metal plate, and the transmittance of the electromagnetic waves is basically 0. The reflectance R (ω) is related to the S parameter: r (ω) ═ S11(ω)|2The microwave absorption structure absorptance a (ω) can be obtained by the formula (1). By adjusting the slow wave size of the structure to be near the center frequency, a relatively broadband absorption structure can be optimized.
The main absorption part in the whole structure can be seen through a field distribution diagram, the intensity values of the part subjected to radiation and non-radiation are compared through an infrared thermal imager, and then the comparison is carried out with the safety threshold value measured under the international specific radiance standard, so that the safety of the radiation source can be rapidly and accurately determined.
Example 1
This embodiment is a novel radiation measuring chip for measuring the radiation (28GHz) of a 5G mobile phone. The specific parameters are as follows: the substrate is a copper plate with a thickness tsubAbout 0.2mm, the period p is 4mm, the unit structure is a pyramid structure formed by alternately arranging epoxy glass cloth laminated board (FR-4) layers and copper (Cu) layers, wherein the thickness t of FR-4 isd0.2mm, dielectric constant 4.3, loss tangent angle 0.025, Cu thickness tm0.035mm, pyramid bottom layer size a1Is 3mm, the top layer dimension a22.35mm and the number of layers n is 10.
Through numerical simulation, we can obtain an absorption curve as shown in fig. 4, and can see that the absorption is more than 90% at 26GHz-30GHz, and effective absorption of radiation of the radiation source can be realized. Meanwhile, we can also obtain distribution diagrams of the electric field intensity and the magnetic field intensity at 28GHz as shown in FIG. 5, and can observe that the electric field and the magnetic field are strongly localized in the middle layer of the pyramid structure, and are respectively localized in each layer of the pyramid structure from low to high according to the working frequency from small to large in the working frequency band, so that the local temperature of the device is integrally increased, the infrared energy fluctuation of radiation is caused, and the temperature increase, namely the radiation size of the radiation source, can be obtained through an infrared imaging system.
Fig. 6 shows that the absorption of the chip under TE and TM polarization incidence remains substantially above 90% in the operating band and is insensitive to polarization.
Fig. 7 shows the absorption condition of the chip under different incident angles, and the chip can realize high-efficiency absorption (> 90%) in a large-angle (0-70 °), and can effectively improve the test accuracy.
The above-mentioned embodiments are provided for explaining the present invention, not for limiting the present invention, and any modifications and changes made to the present invention are within the spirit of the present invention and the scope of the claims and fall within the scope of the present invention.
Claims (10)
1. The utility model provides a novel radiation measurement chip based on slow light effect, its characterized in that, the chip divide into two parts, a part is slow light absorbing structure, divide into two-layer from top to bottom, the upper strata comprises the unit of periodic arrangement, the cycle is p (p 2-4mm), periodic unit structure comprises the square metal of different sizes and the multilayer pyramid structure of absorbing wave medium under the narrow width that forms of z direction (direction of height) stack in turn, every periodic unit structure is the same, wherein the length of side of bottom layer structure is a1(3mm≤a1P) or less), the side length of the topmost layer structure is a2(a2Not more than 2.35mm) and the thickness of the square metal is tm(tmLess than or equal to 0.035mm), and the thickness of the wave-absorbing medium layer is td(tdNot less than 0.2mm), the number of pyramid layers is n (n is not less than 10), wherein the slow light cut-off frequency of the slow light wave absorbing structure is near the central frequency (28GHz), so that the electromagnetic waves near the central frequency are respectively and strongly localized in each layer of the pyramid structure; the lower layer of the slow light wave-absorbing structure is a metal substrate with the thickness tsub(tsubNot less than 0.2mm), and the other part is an infrared imager.
2. The slow light effect-based novel radiation measuring chip according to claim 1, wherein the side lengths a of the bottommost structure and the topmost structure are changed1And a2The frequency of the slow wave effect formed at different positions can be adjusted, and the working frequency, a, of the chip can be adjusted1The larger the wave absorption frequency, the smaller the corresponding minimum wave absorption frequency, a2The smaller the corresponding maximum wave absorbing frequency is.
3. The novel radiation measurement chip based on slow light effect as claimed in claim 1, wherein increasing the number n of pyramid layers enhances the absorption rate of the structure, and adjusts a1a2The wider the obtained working frequency band is, the more the pyramid layer number n is needed to ensure that the whole pyramid structure can effectively support the slow wave in the working frequency band range, and further the absorption rate isClose to 1 throughout the operating band.
4. The slow-light-effect-based novel radiation measurement chip as claimed in claim 1, wherein the multilayer pyramid structure is formed by alternately distributing high-loss dielectric layers and metal material layers, the loss tangent angle of the high-loss dielectric layers is more than 0.02, and the conductivity of the metal material layers is more than 107S/m。
5. The slow light effect-based novel radiation measurement chip according to claim 4, wherein the high-loss dielectric layer is an epoxy glass cloth laminate (FR-4).
6. The novel radiation measurement chip based on slow light effect as claimed in claim 4, wherein said metal material layer is copper (Cu).
7. The slow light effect based novel radiation measurement chip according to claim 1, wherein the substrate has a conductivity of more than 107S/m metal material.
8. The slow light effect-based novel radiation measurement chip according to claim 1, wherein the metal is copper (Cu).
9. The novel radiation measurement chip based on slow light effect as claimed in claim 1, wherein the infrared imager is composed of an imaging objective and an infrared detector, has thermal sensitivity greater than 0.1 ℃, imaging resolution greater than 0.01mm, and operates in far infrared (8-14 μm) band.
10. The slow light effect based novel radiometric chip of claim 1, wherein said infrared imager is FLIR E8.
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| CN201920548302.0U CN210803594U (en) | 2019-04-22 | 2019-04-22 | Novel radiation measurement chip based on slow light effect |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110082607A (en) * | 2019-04-22 | 2019-08-02 | 浙江大学 | A kind of novel radiation measurement chip based on slow light effect |
| CN114046885A (en) * | 2021-11-22 | 2022-02-15 | 北京泰乙信测控技术有限公司 | High-power microwave space positioning and energy region measuring method based on infrared imaging |
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2019
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110082607A (en) * | 2019-04-22 | 2019-08-02 | 浙江大学 | A kind of novel radiation measurement chip based on slow light effect |
| CN114046885A (en) * | 2021-11-22 | 2022-02-15 | 北京泰乙信测控技术有限公司 | High-power microwave space positioning and energy region measuring method based on infrared imaging |
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