CN210743953U - Building block combined type surface mount TVS diode - Google Patents

Building block combined type surface mount TVS diode Download PDF

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Publication number
CN210743953U
CN210743953U CN201922259013.1U CN201922259013U CN210743953U CN 210743953 U CN210743953 U CN 210743953U CN 201922259013 U CN201922259013 U CN 201922259013U CN 210743953 U CN210743953 U CN 210743953U
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China
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reed
pin
chip
tvs
plastic shell
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CN201922259013.1U
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Chinese (zh)
Inventor
叶敏
陈盛隆
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Parker Microelectronics Shenzhen Co Ltd
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Parker Microelectronics Shenzhen Co Ltd
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Abstract

The utility model provides a building block combined type surface mount TVS diode, which comprises a plastic shell, a pin reed and a chip module; one side of the plastic shell is provided with an opening, and the opening extends inwards to form a containing cavity; the two pin reeds are arranged on two opposite sides in the plastic shell cavity and are used for communicating a circuit; a plurality of chip module settings are moulded the shell opening in, and the card is in the middle of two pin reeds for make up out the TVS diode of various voltage classes and realize the circuit function, and the chip module includes two-way TVS chip, copper grain and black glue, and two-way TVS chip of welding is between two copper grains, paints the black glue around two-way TVS chip and seals. The utility model discloses a product structure of building blocks combination formula, the main part need not the welding, can make up out the product of various voltage levels and surge level, and the core unit of its product is standard chip module. The standard chip module only needs to select typical voltage, the types are few, the chip module is simple in process, and the mass production is easy.

Description

Building block combined type surface mount TVS diode
Technical Field
The utility model relates to a diode field, in particular to building blocks combination formula paster TVS diode.
Background
Transient Voltage Suppressor (TVS) is used as an effective protection device to effectively suppress Transient interference. The TVS is a diode with special functions made of silicon semiconductor materials, and when two ends of the TVS tube are subjected to instantaneous high-energy impact, the TVS tube can be quickly started, simultaneously absorbs surge current, and clamps the voltage between the two ends of the TVS tube to a preset value, so that the following precise electronic components are prevented from being damaged by the impact of transient high energy.
At present, the conventional TVS diode has more voltage levels and is corresponding to different surge levels, so that the derived models are too many, great cost pressure is caused to manufacturers, the model selection is inconvenient, and the technical problem needs to be solved by providing a building block combined type surface mount TVS diode.
SUMMERY OF THE UTILITY MODEL
The utility model provides a building blocks combination formula paster TVS diode, its product structure through adopting a building blocks combination formula, the main part need not the welding, can make up out the product of various voltage levels and surge level, and the core unit of its product is standard chip module to the TVS diode that solves among the prior art exists voltage levels more, and the type selection is inconvenient, and the not reasonable problem of distribution inadequately of each part.
In order to solve the technical problem, the utility model adopts the technical scheme that:
a building blocks combination formula paster TVS diode, it includes:
the plastic shell is a cuboid, an opening is formed in one surface of the plastic shell, and a cavity extends from the opening to the inside;
the two pin reeds are arranged on two opposite sides in the plastic shell containing cavity, and pins of the pin reeds extend out of the plastic shell and are used for being communicated with a circuit;
the chip modules are arranged in the opening of the plastic shell and clamped between the two pin reeds to realize the circuit function, each chip module comprises a bidirectional TVS chip, copper particles and black glue, the bidirectional TVS chip is welded between the two copper particles, and the black glue is coated around the bidirectional TVS chip for sealing;
the bidirectional TVS chips in the chip modules are standard bidirectional TVS chips, and copper particles in the chip modules can be processed into different thicknesses, so that a plurality of chip modules can be placed in the plastic shell according to selection for combining products with various voltage levels and surge levels.
Building blocks combination formula paster TVS diode in, the appearance chamber of moulding the shell is a cuboid structure, moulds shell inner wall thickness unanimous. Building blocks combination formula paster TVS diode in, it all is provided with a hemisphere arch to mould central point on two relative inner walls of shell, the inner wall is hugged closely to the bellied plane one side of hemisphere, protruding and mould the shell and be a whole.
Building blocks combination formula paster TVS diode in, pin reed cross-section constitutes a "nearly" style of calligraphy, including pin, first reed, second reed and connection piece, first reed is connected the copper grain of chip module, the shell inner wall is hugged closely to the second reed, and first reed and second reed are connected to the connection piece, and the pin is connected first reed and is kept away from the intermediate position of connection piece one end, and the pin width is less than the width of first reed, and two pins are outwards extended relatively.
Building blocks combination formula paster TVS diode in, first reed, connection piece and second reed width on the pin reed with mould the shell in hold the chamber width unanimous, the first reed length of pin reed with mould the shell in hold the chamber degree of depth unanimous, the shell diapire is hugged closely to the connection piece.
Building blocks combination formula paster TVS diode in, first reed on the pin reed is provided with the through-hole for moulding the protruding position of shell inner wall, the through-hole internal diameter slightly is greater than protruding external diameter, protruding card is in the through-hole.
Building blocks combination formula paster TVS diode in, the second reed of pin reed is kept away from connection piece one end is provided with the screens device, the screens device is the structure that a cross-section similar rings were buckled into to the second reed for connection piece one end is kept away from on second reed place plane has a circular arc arch.
Building blocks combination formula paster TVS diode in, the material of pin reed is copper.
Building blocks combination formula paster TVS diode in, in the chip module, two copper grains are the size unanimity, are a cylinder, the complete encirclement of copper grain two-way TVS chip, the copper grain can be placed in moulding the shell.
Building blocks combination formula paster TVS diode in, two the pin reed centre gripping is a plurality of gross thickness behind the chip module with mould the shell and hold chamber length unanimously.
The utility model discloses compare in prior art, its beneficial effect is: the utility model discloses a product structure of building blocks combination formula, the main part need not the welding, can make up out the product of various voltage levels and surge level, and the core unit of its product is standard chip module. The standard chip module only needs to select typical voltage, the types are few, the chip module is simple in process, and the mass production is easy.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments are briefly introduced below, and the drawings in the following description are only corresponding drawings of some embodiments of the present invention.
Fig. 1 is the utility model discloses a building blocks combination formula paster TVS diode's structural plan view.
Fig. 2 is a schematic cross-sectional view along direction a of fig. 1.
Fig. 3 is the utility model discloses a building blocks combination formula paster TVS diode's chip module's schematic structure diagram.
Fig. 4 is the utility model discloses a building blocks combination formula paster TVS diode mould shell top view.
Fig. 5 is a schematic cross-sectional view along direction B of fig. 4.
Fig. 6 is a pin reed elevation view of the building block combined type surface mount TVS diode of the present invention.
Fig. 7 is the utility model discloses a building blocks combination formula paster TVS diode's pin reed left side view.
The chip module comprises 1, 2, pin reeds, 3, a plastic shell, 11, copper particles, 12, a bidirectional TVS chip, 13, black glue, 21, second reeds, 22, connecting sheets, 23, first reeds, 24 and pins
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by the skilled in the art without creative work belong to the protection scope of the present invention.
In the drawings, elements having similar structures are denoted by the same reference numerals.
The terms "first," "second," and the like in the terms of the present invention are used for descriptive purposes only and are not to be construed as indicating or implying relative importance, nor should they be construed as limiting in any way.
Following do the utility model provides a pair of building blocks combination formula paster TVS diode's that can solve above technical problem one embodiment.
Please refer to fig. 1, fig. 2, fig. 3, fig. 4, fig. 5, fig. 6 and fig. 7, wherein, fig. 1 is the utility model discloses a building blocks combination formula paster TVS diode's structural plan view, fig. 2 is the cross-sectional schematic diagram of fig. 1 along the a direction, fig. 3 is the utility model discloses a building blocks combination formula paster TVS diode's chip module's structural schematic diagram, fig. 4 is the utility model discloses a building blocks combination formula paster TVS diode's moulded shell plan view, fig. 5 is the cross-sectional schematic diagram of fig. 4 along the B direction, fig. 6 is the utility model discloses a building blocks combination formula paster TVS diode's pin reed elevation view, fig. 7 is the utility model discloses a building blocks combination formula paster TVS diode's pin reed left.
The utility model provides an embodiment of building blocks combination formula paster TVS diode does: a building block combined type surface mount TVS diode comprises a plastic shell 3, a pin reed 2 and a chip module 1, wherein the plastic shell 3 is a cuboid, one surface of the plastic shell 3 is provided with an opening, and the opening extends inwards to form a containing cavity; the two pin reeds 2 are arranged on two opposite sides in the cavity of the plastic shell 3, and pins 24 of the pin reeds 2 extend out of the plastic shell 3 and are used for being communicated with a circuit; the chip modules 1 are arranged in openings of the plastic shell 3 and clamped between the two pin reeds 2 to realize circuit functions, each chip module 1 comprises a bidirectional TVS chip 12, copper particles 11 and black glue 13, the bidirectional TVS chip 12 is welded between the two copper particles 11, and the black glue 13 is coated around the bidirectional TVS chip 12 for sealing; the two-way TVS chip 12 in the chip module 1 is a standard two-way TVS chip 12, and the copper particles 11 in the chip module 1 can be processed into different thicknesses, so that a plurality of chip modules 1 can be placed in the plastic shell 3 according to selection, and products with various voltage levels and surge levels can be combined. By adopting a building block combined product structure, products with various voltage levels and surge levels can be combined without welding a main body, and a core unit of the product is a standard chip module 1. The standard chip module 1 only needs to select typical voltage, the types are few, and the chip module 1 is simple in process and easy to produce in quantity.
The appearance chamber of moulding the shell 3 is a cuboid structure, moulds 3 inner walls of thickness unanimous, moulds 3 one shot forming, and the central point puts all to be provided with a hemisphere arch on moulding 3 two relative inner walls, and the inner wall is hugged closely to bellied plane one side of hemisphere, and the arch is a whole with moulding 3. The protruding convenient fixed pin 24 jump ring is difficult for droing.
The section of the pin reed 2 forms a shape like a Chinese character 'ji', and the pin reed comprises a pin 24, a first reed 23, a second reed 21 and a connecting sheet 22, wherein the first reed 23 is connected with the copper particle 11 of the chip module 1, the second reed 21 is tightly attached to the inner wall of the plastic shell 3, the connecting sheet 22 is connected with the first reed 23 and the second reed 21, the pin 24 is connected with the middle position of the first reed 23 far away from one end of the connecting sheet 22, the width of the pin 24 is smaller than that of the first reed 23, and the two pins 24 extend outwards relatively. Compact structure and convenient circuit external connection.
The widths of the first reed 23, the connecting piece 22 and the second reed 21 on the pin reed 2 are consistent with the width of the content cavity of the plastic shell 3, the length of the first reed 23 of the pin reed 2 is consistent with the depth of the content cavity of the plastic shell 3, and the connecting piece 22 is tightly attached to the bottom wall of the plastic shell 3. Pin reed 2 card can not control when moulding the shell 3 and rock, stable in structure, and first reed 23 on the pin reed 2 is provided with the through-hole for moulding the protruding position of shell 3 inner wall, and the through-hole internal diameter slightly is greater than protruding external diameter, and protruding card is in the through-hole. The end of the second spring 21 of the pin spring 2, which is far away from the connecting piece 22, is provided with a blocking device, and the blocking device is a structure with a cross section similar to a hanging ring formed by bending the second spring 21, so that an arc bulge is arranged at the end, which is far away from the connecting piece 22, of the plane where the second spring 21 is located. The pin reed 2 is made of copper, so that the conductivity is stable and the elasticity is good.
In the chip module 1, two copper particles 11 are identical in size and are a cylinder, the copper particles 11 completely surround the bidirectional TVS chip 12, and the copper particles 11 can be placed in the plastic shell 3. The total thickness of the two pin reeds 2 after clamping the plurality of chip modules 1 is consistent with the length of the cavity of the plastic shell 3, and the structure is stable.
The utility model discloses a theory of operation: installing pin reeds 2 on two opposite inner walls of a plastic shell 3 with bulges, wherein the bulges correspond to through holes on the pin reeds 2, the two pins extend outwards relatively, welding a copper grain 11 on each side of a bidirectional TVS chip 12, then coating black glue 13 around the bidirectional TVS chip 12 for sealing to form a chip module 1, pulling out a clamping device of the pin reeds 2 in the plastic shell 3 along the opposite direction, selecting a plurality of combined chip modules 1 according to the voltage grade requirement, coating a plurality of chip module copper grains with conductive glue to form a whole, placing the whole between the pin reeds 2 in the plastic shell, so that the pin reeds 2 clamp and install the plurality of chip modules 1, connecting two pin reeds 2 with a circuit, transmitting the circuit to the two copper grains 11 on the chip module 1, when two ends of the bidirectional TVS chip 12 are subjected to transient high-energy impact, the bidirectional TVS chip 12 can change the impedance value between two ends from high resistance to low resistance at a very high speed, so as to absorb an instantaneous large current and clamp the voltage across the bidirectional TVS chip 12 at a predetermined value, thereby protecting the following circuit elements from the impact of the transient high voltage spike.
This completes the assembly and operation of the building block combined type patch TVS diode of the preferred embodiment.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, so that the scope of the present invention shall be determined by the scope of the appended claims.

Claims (10)

1. The utility model provides a building blocks combination formula paster TVS diode which characterized in that includes:
the plastic shell is a cuboid, an opening is formed in one surface of the plastic shell, and a cavity extends from the opening to the inside;
the two pin reeds are arranged on two opposite sides in the plastic shell containing cavity, and pins of the pin reeds extend out of the plastic shell and are used for being communicated with a circuit;
the chip modules are arranged in the opening of the plastic shell and clamped between the two pin reeds to realize the circuit function, each chip module comprises a bidirectional TVS chip, copper particles and black glue, the bidirectional TVS chip is welded between the two copper particles, and the black glue is coated around the bidirectional TVS chip for sealing;
the bidirectional TVS chips in the chip modules are standard bidirectional TVS chips, and copper particles in the chip modules can be processed into different thicknesses, so that a plurality of chip modules can be placed in the plastic shell according to selection for combining products with various voltage levels and surge levels.
2. The TVS diode of claim 1, wherein said molded case cavity is a rectangular parallelepiped and has a uniform thickness of the inner wall.
3. The TVS diode of claim 1, wherein a hemispherical protrusion is disposed at a central position of each of two opposite inner walls of the plastic case, one side of a plane of the hemispherical protrusion is closely attached to the inner wall, and the protrusion and the plastic case are integrated.
4. The building block combined type patch TVS diode as claimed in claim 1, wherein the cross section of the pin reed forms a shape of a Chinese character ji, the pin reed comprises a pin, a first reed, a second reed and a connecting piece, the first reed is connected with the copper particle of the chip module, the second reed is tightly attached to the inner wall of the plastic shell, the connecting piece is connected with the first reed and the second reed, the pin is connected with the middle position of the first reed far away from one end of the connecting piece, the width of the pin is smaller than that of the first reed, and the two pins extend outwards relatively.
5. The building block combined type paster TVS diode according to claim 1, wherein the width of the first reed, the connecting piece and the second reed on the pin reed is consistent with the width of the cavity in the plastic shell, the length of the first reed of the pin reed is consistent with the depth of the cavity in the plastic shell, and the connecting piece is tightly attached to the bottom wall of the plastic shell.
6. The TVS diode of claim 1, wherein a first spring of said pin spring is provided with a through hole at a protruding position relative to an inner wall of the plastic housing, an inner diameter of the through hole is slightly larger than an outer diameter of the protrusion, and the protrusion is engaged in the through hole.
7. The building block combined type patch TVS diode as claimed in claim 4, wherein a retaining means is provided at an end of the second spring of the pin spring away from the connecting piece, the retaining means is a structure with a cross section similar to a hanging ring formed by bending the second spring so that an arc protrusion is provided at an end of a plane where the second spring is located away from the connecting piece.
8. The building block combined type patch TVS diode of claim 1, wherein said pin reed is made of copper.
9. The TVS diode of claim 1, wherein two copper particles of the chip module are identical in size and are a cylinder, the two-way TVS chip is completely surrounded by the copper particles, and the copper particles can be placed in a plastic case.
10. The TVS diode of claim 1, wherein a total thickness of said two pin reeds holding said plurality of chip modules is substantially equal to a length of said molded housing cavity.
CN201922259013.1U 2019-12-16 2019-12-16 Building block combined type surface mount TVS diode Active CN210743953U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201922259013.1U CN210743953U (en) 2019-12-16 2019-12-16 Building block combined type surface mount TVS diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201922259013.1U CN210743953U (en) 2019-12-16 2019-12-16 Building block combined type surface mount TVS diode

Publications (1)

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CN210743953U true CN210743953U (en) 2020-06-12

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113241339A (en) * 2021-04-29 2021-08-10 东莞市佳骏电子科技有限公司 High-power silicon carbide diode and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113241339A (en) * 2021-04-29 2021-08-10 东莞市佳骏电子科技有限公司 High-power silicon carbide diode and manufacturing method thereof
CN113241339B (en) * 2021-04-29 2022-06-21 东莞市佳骏电子科技有限公司 High-power silicon carbide diode and manufacturing method thereof

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