CN210575925U - Encapsulation module and radar system - Google Patents
Encapsulation module and radar system Download PDFInfo
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- CN210575925U CN210575925U CN201921588510.XU CN201921588510U CN210575925U CN 210575925 U CN210575925 U CN 210575925U CN 201921588510 U CN201921588510 U CN 201921588510U CN 210575925 U CN210575925 U CN 210575925U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73207—Bump and wire connectors
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Abstract
The utility model relates to an encapsulation module and radar system, the encapsulation module includes: a lead frame; the system-level radio frequency bare chip is fixedly arranged on the lead frame; a first welding pad and a second welding pad are arranged on the surface of one side, away from the lead frame, of the system-level radio frequency die; the antenna structure is flip-chip welded on the second welding pad; and the lead frame comprises package pins disposed adjacent to the system level radio frequency die; the packaging pin is connected with the first welding pad through a bonding wire; wherein the lead frame and the antenna structure are respectively located on two opposite sides of the system-level radio frequency die; the second welding pad is used for transmitting radio frequency signals, and the first welding pad is used for transmitting non-radio frequency signals. The antenna packaging method and the antenna packaging device have the advantages that different signals are processed separately, manufacturing cost of the packaged antenna can be reduced, and design flexibility and reliability of the packaged antenna are improved.
Description
Technical Field
The utility model relates to a bare chip encapsulation technology field especially relates to a encapsulation module and radar system.
Background
High-frequency radio frequency (such as millimeter wave) antennas have high operating frequency and short wavelength, and are easily affected by the surrounding environment, and conventionally, devices (such as bare chips) which are small in size bring distortion of antenna patterns, which puts high requirements on the environment around the antennas. In order to obtain a more stable and desirable antenna radiation pattern, the antenna is usually designed on one side of the package substrate, and a die, solder balls, etc. are placed on the other side of the package substrate.
Since the die (die) is exposed on the solder ball side of the package substrate, it is usually necessary to grind the die to a thinner size, which is very disadvantageous to the reliability of the die; secondly, the existing packaged antenna mostly adopts a single packaging process, and along with higher requirements on the radiation performance and the path loss of the packaged antenna, a low-loss substrate and a fine processing process are correspondingly required, so that the price of the product is higher.
SUMMERY OF THE UTILITY MODEL
In view of the above, it is desirable to provide a package module and a radar system.
A system-in-system radio frequency die package module, the package module comprising:
a lead frame;
the system-level radio frequency bare chip is fixedly arranged on the lead frame; a first welding pad and a second welding pad are arranged on the surface of one side, away from the lead frame, of the system-level radio frequency bare chip;
the antenna structure is flip-chip welded on the second welding pad; and
the lead frame comprises a package pin arranged adjacent to the system level radio frequency die; the packaging pin is connected with the first welding pad through a bonding wire;
wherein the lead frame and the antenna structure are respectively located on two opposite sides of the system-level radio frequency die; the second welding pad is used for transmitting radio frequency signals, and the first welding pad is used for transmitting non-radio frequency signals.
In one embodiment, the package module further includes:
the height-adjustable solder ball is used for inversely welding the antenna structure on the second welding pad through the solder ball;
the size of the antenna structure can be adjusted according to the height of the solder balls.
In one embodiment, the package module further includes a metal pillar disposed between the solder ball and the antenna structure for adjusting a distance between the antenna structure and the system-level rf die.
In one embodiment, the package module further includes:
the supporting column is arranged between the lead frame and the antenna structure and used for supporting the antenna structure;
wherein the system-level radio frequency die and the package pins are located in a device area of the lead frame, the device area being an area where the antenna structure is projected onto the lead frame.
In one embodiment, the antenna structure is a planar antenna structure.
In one embodiment, the planar antenna structure is a patch antenna structure or a monopole antenna structure.
In one embodiment, the antenna structure comprises a substrate and a radiation unit arranged on the substrate; and
the radiation unit is electrically connected with the solder balls through metallized through holes penetrating through the substrate;
wherein the radiation unit is arranged on the surface of one side of the substrate far away from the system-level radio frequency bare chip.
In one embodiment, the frequency of the radio frequency signal is greater than or equal to 10GHz, and the non-radio frequency signal includes a direct current signal.
In one embodiment, the radio frequency signal is a millimeter wave signal.
Above-mentioned encapsulation module, on the one hand place system level radio frequency bare chip and antenna structure in the same side of lead frame, can avoid the problem that leads to the reliability degradation to the grinding of bare chip, and on the other hand, this application adopts different packaging methods to come different signals separately to handle, also adopts different line modes of walking to different signals, both can reduce the mutual interference between the signal, can provide higher flexibility for the design of antenna in the encapsulation module again.
Based on the same inventive concept, the present application further provides a package module, which includes:
the millimeter wave radar die comprises a millimeter wave radar die, wherein a first area and a second area surrounding the first area are arranged on one side surface of the millimeter wave radar die;
the first welding pads are arranged in the first area and are high-frequency welding pads; the second welding pads are arranged in the second area and comprise direct current welding pads and low-frequency welding pads;
the packaging structure of the first welding pad is an inverted packaging structure, the packaging structure of the second welding pad is a bonding packaging structure, and the frequency of signals transmitted by the high-frequency welding pad is greater than that of signals transmitted by the low-frequency welding pad.
In one embodiment, the package module further includes:
the millimeter wave radar bare chip is fixedly arranged on the lead frame, and each first welding pad and each second welding pad are arranged on the surface of one side, away from the lead frame, of the millimeter wave radar bare chip;
the antenna structure is flip-chip welded on the first welding pads; and
the lead frame comprises a package pin arranged close to the millimeter wave radar bare chip; the packaging pin is connected with the second welding pad through a bonding wire;
wherein the lead frame and the antenna structure are located on opposite sides of the die.
In one embodiment, the frequency of the signal transmitted by the high-frequency pad is greater than or equal to 30GHz, and the frequency of the signal transmitted by the low-frequency pad is less than 30 GHz.
In one embodiment, the package module further includes:
the antenna structure is flip-chip welded on the first welding pads through the welding balls;
the size of the antenna structure can be adjusted according to the height of each solder ball.
In one embodiment, the package module further includes:
the supporting column is arranged between the lead frame and the antenna structure and used for supporting the antenna structure;
wherein the millimeter-wave radar die and the package pins are contained in a region where the antenna structure is projected onto the lead frame.
Above-mentioned encapsulation module, through set up first region and encircle on millimeter wave radar die the second area in first region, set up a plurality of high frequency weld pads in first region respectively again, set up a plurality of direct currents and low frequency weld pad in the second area, then adopt flip-chip packaging structure to the high frequency weld pad again, adopt bonding packaging structure to direct current and low frequency weld pad, that is, this application adopts different packaging methods to come different signals separately to handle, can understand again and adopt different line modes of walking to the signal of difference, both can reduce the mutual interference between the signal, can provide higher flexibility for the design of antenna in the encapsulation module again.
Based on the same inventive concept, the present application also provides a radar system, comprising:
an external processor, and
the package module as described above;
the external processor receives the radar data output by the packaging module and processes the radar data to generate communication data, driving assistance data, security check imaging data and/or human body vital sign parameter data.
In one embodiment, the package module is an AiP package module.
According to the radar system, the packaging module is adopted, different packaging structures are adopted for different types of signals, so that the interference among the different types of signals can be effectively reduced, particularly, when the radar system is applied to radar systems, communication equipment and the like, the noise of data transmitted and received by a system-level radio frequency chip is lower, and correspondingly generated data such as communication data, driving assistance data, security inspection imaging data and/or human body vital sign parameter data are more accurate.
Drawings
Fig. 1 is a schematic structural diagram of a system-level rf die package module according to a first embodiment;
fig. 2 is a schematic structural diagram of a system-level rf die package module according to a second embodiment;
fig. 3 is a schematic structural diagram of a system-level rf die package module according to a third embodiment;
fig. 4 is a schematic structural diagram of a system-level rf die package module according to a fourth embodiment;
FIG. 5 is a schematic structural diagram of a system-level RF die package module according to a fifth embodiment;
FIG. 6 is a top view of an embodiment of a package module;
fig. 7 is a top view of a package module according to another embodiment.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only and do not represent the only embodiments.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
The System-level radio frequency bare chip adopts a System-level packaging technology, and System In Package (SiP) mainly integrates electronic components with different types and functions into a complete System, so that perfect compatibility of chips with different processes and different functions can be realized, the cost can be reduced, and the time cost can be saved.
Referring to fig. 1 and fig. 6, a package module is provided. The package module may include a lead frame (not shown), a system-level rf die 20 and an antenna structure 30. The Lead Frame is also called Lead Frame, that is, the Lead Frame in the embodiment of the present application may be a key structural member that realizes electrical connection between a Lead-out terminal of an internal circuit of a chip and an external Lead by means of a bonding material (gold wire, aluminum wire, copper wire) to form an electrical circuit, and the Lead Frame plays a role of a bridge connected with an external wire, and is an important basic material in the electronic information industry, where the Lead Frame is required to be used in most semiconductor integrated blocks. The system-level radio frequency bare chip 20 is fixedly arranged on the lead frame, meanwhile, a first welding pad 210 and a second welding pad 220 are arranged on the surface of one side, away from the lead frame, of the system-level radio frequency bare chip 20, the second welding pad 220 can be used for transmitting radio frequency signals, the first welding pad 210 can be used for transmitting non-radio frequency signals, the radio frequency signals can be high-frequency signals, and the non-radio frequency signals can be direct current signals or low-frequency signals; the number of the first pads 210 and the second pads 220 is not particularly limited, and those skilled in the art can select and adjust the number according to the transmission performance of the antenna structure 30; the antenna structure 30 is flip-chip bonded to the second bonding pad 220, which is also called flip-chip technology, and generally refers to a technology of directly interconnecting the IC die with a package housing or a wiring substrate with the pad side facing down, which is also called flip-chip technology. Compared with other bare chip interconnection technologies such as Wire Bonding (WB), Tape Automated Bonding (TAB) and the like, the technology has the advantages that the interconnection line is short, the parasitic capacitance and the parasitic inductance are small, the I/O electrodes of the bare chips can be arranged on the surfaces of the bare chips at will, and the packaging density is high. The lead frame may include package pins 102 disposed adjacent to the system level rf die 20, as shown in fig. 1, the package pins 102 of the present application may be connected to the first pads 210 by bonding wires 204.
Based on the concept of flip-chip die technology, the present application flip-chip bonds the antenna structure 30 (with radiation function) in the antenna to the second pad 220 of the system-level rf die 20, and the second pad 220 transmits a rf signal, and connects the package pin 102 in the lead frame to the first pad 210 through the bonding wire 204, and the first pad 210 transmits a non-rf signal, so that different signals can be processed separately.
In this embodiment, the frequency of the radio frequency signal transmitted by the second pad 220 may be greater than or equal to 10GHz, and optionally, the radio frequency signal may be a millimeter wave signal. The non-rf signal transmitted by the first pad 210 may include a dc signal and may also include a signal having a frequency less than 10 GHz. The dc signal can be regarded as a special low frequency signal with a frequency of 0 GHz. By processing the high-frequency signal with the frequency above 10GHz and the antenna structure 30 by using the flip-chip process, the low-frequency signal with the frequency below 10GHz or the direct-current signal is connected with the package pin 102 in the lead frame by using the metal lead 204 (bonding wire), that is, different connection modes are used for different signals, so that on one hand, mutual interference between signals can be reduced, and on the other hand, higher flexibility can be provided for the design of an antenna in a package module. Meanwhile, it is easy to see that the lead frame and the antenna structure 30 of the present application are respectively located on two opposite sides of the system-level rf die 20, so that the problem of reliability degradation caused by grinding the die can be avoided.
Optionally, with continuing reference to fig. 1, the package module of the present application may further include solder balls 202, and the antenna structure 30 is flip-chip bonded to the second solder pads 220 through the solder balls 202, in other words, the second solder pads 220 are electrically connected to the antenna structure 30 through the solder balls 202; since the solder balls 202 are mainly disposed on the second pads 220, the number of the solder balls 202 is mainly determined by the number of the second pads 220; the height of the solder balls 202 themselves can be adjusted, so that the size of the antenna structure 30 can be adjusted according to the height of the solder balls 202; the height of the solder balls 202 can be adjusted by increasing their own size.
Alternatively, the solder balls 202 may include any one of tin solder, silver solder, and gold-tin alloy solder.
The use of solder balls 202 as the connection between the antenna structure 30 and the system level rf die 20 during the flip-chip packaging process can result in better impedance matching, reduced interconnect damage, reduced interconnect length compared to wire bonding, and reduced device cost.
In one embodiment, referring to fig. 2, in order to prevent the size of the antenna structure 30 from being affected by the bonding wires, that is, in order to make the antenna structure 30 and the bonding wires 204 dislocated in height, the package module of the present application is further provided with metal pillars 206, the metal pillars 206 are disposed between the solder balls 202 and the antenna structure 30 for adjusting the distance between the antenna structure 30 and the die 20, and the metal pillars 206 should be selected from a plurality of layers of metal connection pillars with larger diameter and lower loss. On one hand, the loss of the antenna structure can be reduced, and when the antenna structure 30 is too large, the bonding wire 204 can be dislocated in height, so that the layout of the bonding wire 204 is not limited by the distance between the antenna structure 30 and the system level rf die 20.
Optionally, referring to fig. 3, in order to avoid the situation that the antenna structure 30 is too large and cannot be stably supported only by the metal pillar 206 located in the central area of the antenna structure 30, the package module of the present application is further provided with a supporting pillar 40, and the supporting pillar 40 is disposed between the lead frame and the antenna structure 30; wherein the system level radio frequency die 20 and the package pins 102 are located in a device area on the lead frame, the device area being an area where the antenna structure 30 is projected onto the lead frame. In particular, the support posts 40 may be disposed on package pins 102 of a lead frame, extending from the package pins 102 all the way up to the antenna structure 30 for supporting the antenna structure. Optionally, the support pillar 40 of the present application may be made of a metal material and/or a plastic material, in other words, the support pillar 40 may be made of only a metal material, only a plastic material, or a part of the support pillar may be made of a metal material and a part of the support pillar may be made of a plastic material. On one hand, the supporting posts 40 made of metal and/or plastic materials can support the substrate, and on the other hand, the supporting posts 40 made of metal materials can strengthen the return path of high-frequency signals.
Alternatively, the antenna structure 30 of the present application may be a planar antenna structure; more optionally, the planar antenna structure of the present application may be a patch antenna structure or a monopole antenna structure. The patch antenna structure mainly comprises a metal patch, the monopole antenna structure mainly comprises a monopole, and the shapes and the sizes of the metal patch and the monopole can provide different bandwidths for the antenna structure 30, so that the shapes and the sizes of the metal patch and the monopole can be selected and adjusted according to the performance requirements of actual products by technicians in the field.
In one embodiment, referring to fig. 4, the antenna structure 30 of the present application may include a substrate (not shown in fig. 4) and a radiation unit 220 disposed on the substrate; the number of the radiation units 220 may be multiple, and when multiple radiation units 220 are used, the multiple radiation units 220 may be arranged in an array; the radiating element 220 is electrically connected to the solder balls 202 through a metalized via (not shown in fig. 4) penetrating through the substrate, and the radiating element 220 is disposed on a surface of the substrate on a side away from the system level rf die 20.
Optionally, with continued reference to fig. 4, the substrate may include a first dielectric substrate 312, a first metal layer 314, and a second dielectric substrate 316; the first metal layer 314 is sandwiched between the first dielectric substrate 312 and the second dielectric substrate 316; the radiation unit 320 is disposed above the second dielectric substrate 316; the first dielectric substrate 312 is provided with a first metalized via H1, the second dielectric substrate 316 is provided with a second metalized via H2, the solder ball 202 is disposed below the first dielectric substrate 312 and electrically contacts with the first metalized via H1 on the first dielectric substrate 312, and the radiation unit 320 is electrically contacted with the second metalized via H2 on the second dielectric substrate 316, in other words, the system-level rf die 20 transmits the high frequency signal to the radiation unit 320 through the second solder pad 220, the solder ball 202 and the first metalized via H1 or the second metalized via H2, and radiates the high frequency signal to be transmitted through the radiation unit 320.
It should be noted that the numbers of the radiating elements 320, the solder balls 202, the first solder pads 210, the second solder pads 220, the first metalized vias H1, the second metalized vias H2, the metal pillars 206, and the supporting pillars 40 in the present application are not particularly limited.
Optionally, the package module of the present application is further provided with a plastic package layer (not shown) above the antenna structure, and is mainly used for plastic packaging of each component in the whole package module, so that each component in the whole package module is fixed in a package material to form a system-in-package system, and the material of the plastic package layer may include any one of polyimide, silica gel, and epoxy resin. The radiation unit 320 in the embodiment of the present application may be disposed in the molding layer, or a part or all of the radiation surface may be exposed outside the molding layer, so as to improve the radiation efficiency of the antenna structure.
With continued reference to fig. 4, the leadframe may further include a metal layer 104 for carrying the electronic device, wherein the metal layer 104 is disposed on the same layer as the package pins 102; in other words, the leadframe may include package pins 102 and metal layers 104; it can be understood that when the encapsulation module of this application is encapsulated, can also be provided with the one deck PCB board below the lead frame of this application, this PCB board can play temporary bearing effect, treat between metal level 104 and the encapsulation pin 102 by the encapsulation of plastic envelope layer fixed after, can get rid of it, perhaps wait to use to specific product time, get rid of this layer of PCB board again, can not influence the performance of this application encapsulation module after getting rid of the PCB board.
In summary, the package module of the present application, on the one hand, the system level rf bare chip and the antenna structure are disposed on the same side of the lead frame, so as to avoid the problem of reliability degradation caused by grinding the system level rf bare chip, and on the other hand, the package module of the present application adopts different package modes to separately process different signals, that is, different routing modes are adopted for different signals, which not only can reduce mutual interference between signals, but also can provide higher flexibility for the design of the antenna in the package module.
Based on the same inventive concept, the application also provides a packaging module.
Please refer to fig. 7, which can also be referred to in conjunction with fig. 1-6. The package module of the present application may include a millimeter wave radar Die, a plurality of first pads DP (Die Pad)1 and a plurality of second pads DP (Die Pad) 2; wherein, a side surface of the millimeter wave radar die is provided with a first area a1 and a second area a2 surrounding the first area a1, specifically, the first area a1 may be a central area of the die, and the second area a2 may be an edge position surrounding the central area; as shown in fig. 7, a plurality of first pads DP1 are disposed in the first region a1, and a plurality of second pads DP2 are disposed in the second region a2, that is, a plurality of second pads DP2 are disposed around the plurality of first pads DP 1.
Alternatively, the first pad DP1 may be a high frequency pad, and the frequency of a signal transmitted by the high frequency pad may be greater than or equal to 30 GHz; the second pad DP2 includes a dc pad and a low frequency pad, the frequency of the signal transmitted by the low frequency pad is less than 30GHz, and the frequency of the signal transmitted by the dc pad can be understood as a special signal of 0 GHz; the packaging structure of the first welding pad DP1 is a flip-chip packaging structure, and the packaging structure of the second welding pad DP2 is a bonding packaging structure. By disposing the plurality of first pads DP1 at the center position of the millimeter wave radar die, the flip chip packaging process can be facilitated, and by disposing the second pads DP2 at the edge of the millimeter wave radar die, the bonding packaging process can be facilitated.
In one embodiment, the package module of the present application may further include a lead frame (not shown in fig. 7), an antenna structure (not shown in fig. 7); the millimeter wave radar bare chip die is fixedly arranged on the lead frame, and each first welding pad DP1 and each second welding pad DP2 are arranged on the surface of one side, away from the lead frame, of the millimeter wave radar bare chip die; the antenna structure is flip-chip bonded to each of the first pads DP 1; the package pin P is arranged close to the millimeter wave radar bare chip; the lead frame may include a package pin P (Packaging pin) disposed adjacent to the millimeter wave radar die, the package pin P being connected to the second pad DP2 by a Bond Wire BW (Bond-Wire); the lead frame and the antenna structure are located on two opposite sides of the millimeter wave radar die.
It should be noted that, for the descriptions of the lead frame, the antenna structure, the flip chip bonding, the flip chip package structure, the bonding package structure, and the like in the present embodiment, reference may be made to the descriptions in the foregoing package module embodiments, and further description is not repeated herein.
In one embodiment, the package module of the present application may further include solder balls (not shown in fig. 7), and the antenna structure is flip-chip bonded to the first solder pads DP1 through the solder balls, in other words, the first solder pads DP1 are electrically connected to the antenna structure through the solder balls; since the solder balls are mainly disposed on the first pads DP1, the number of the solder balls is mainly determined by the number of the first pads DP 1; the height of the solder ball can be adjusted, so that the size of the antenna structure can be adjusted according to the height of the solder ball; the height of the solder ball can be adjusted by increasing its own size.
In one embodiment, the package module of the present application may further include a support pillar (not shown in fig. 7) and a metal pillar (not shown in fig. 7), the support pillar being disposed between the lead frame and the antenna structure for supporting the antenna structure; wherein the millimeter wave radar die and the package pin P are included in a region where the antenna structure is projected onto the lead frame. One end of the metal column is fixedly arranged on the antenna structure, and the other end of the metal column is arranged on the solder ball and used for adjusting the distance between the antenna structure and the bare chip die. It is understood that the description of the support posts and the metal posts can refer to the description of the system-level rf die package module, which is not further described herein.
Optionally, the package module of the present application is further provided with a plastic package layer (not shown) above the antenna structure, and is mainly used for plastic packaging of each component of the antenna, so that each component of the antenna is fixed in the package material to form a packaged antenna, and the material of the plastic package layer may include any one of polyimide, silica gel, and epoxy resin.
In conclusion, the package module of the present application transmits signals of different frequencies in the millimeter wave radar die through the pad die pad that sets up different package structures, so as to separate different signals for processing, which can reduce mutual interference between signals, and provide higher flexibility for the design of the antenna in the package module.
Based on the same inventive concept, the present application also provides a radar system (not shown), which may include an external processor (not shown) and the encapsulation module as described above; the external processor receives the radar data output by the packaging module and processes the radar data to generate communication data, driving assistance data, security check imaging data and/or human body vital sign parameter data. Optionally, the Package module may be an AiP chip Package module, AiP (Package Antenna), which is based on Package materials and processes, and integrates an Antenna and a chip in a Package to realize a system-level wireless function. Alternatively, the radar system of the present application may be applied to the fields of automatic driving assistance, security imaging, and search and rescue equipment.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (16)
1. An encapsulated module, comprising:
a lead frame;
the system-level radio frequency bare chip is fixedly arranged on the lead frame; a first welding pad and a second welding pad are arranged on the surface of one side, away from the lead frame, of the system-level radio frequency bare chip;
the antenna structure is flip-chip welded on the second welding pad; and
the lead frame comprises a package pin arranged adjacent to the system level radio frequency die; the packaging pin is connected with the first welding pad through a bonding wire;
wherein the lead frame and the antenna structure are respectively located on two opposite sides of the system-level radio frequency die; the second welding pad is used for transmitting radio frequency signals, and the first welding pad is used for transmitting non-radio frequency signals.
2. The package module of claim 1, further comprising:
the height-adjustable solder ball is used for inversely welding the antenna structure on the second welding pad through the solder ball;
the size of the antenna structure can be adjusted according to the height of the solder balls.
3. The package module of claim 2, further comprising a metal pillar disposed between the solder ball and the antenna structure for adjusting a spacing between the antenna structure and the system-level RF die.
4. The package module of claim 1, further comprising:
the supporting column is arranged between the lead frame and the antenna structure and used for supporting the antenna structure;
wherein the system-level radio frequency die and the package pins are located in a device area on the lead frame, the device area being an area where the antenna structure is projected onto the lead frame.
5. The package module of claim 2, wherein the antenna structure is a planar antenna structure.
6. The package module of claim 5, wherein the planar antenna structure is a patch antenna structure or a monopole antenna structure.
7. The package module according to claim 5, wherein the antenna structure comprises a substrate and a radiating element disposed on the substrate; and
the radiation unit is electrically connected with the solder balls through metallized through holes penetrating through the substrate;
wherein the radiation unit is arranged on the surface of one side of the substrate far away from the system-level radio frequency bare chip.
8. The package module of any one of claims 1-7, wherein the frequency of the RF signal is greater than or equal to 10GHz, and the non-RF signal comprises a DC signal.
9. The package module of claim 8, wherein the radio frequency signal is a millimeter wave signal.
10. An encapsulated module, comprising:
the millimeter wave radar die comprises a millimeter wave radar die, wherein a first area and a second area surrounding the first area are arranged on one side surface of the millimeter wave radar die;
the first welding pads are arranged in the first area and are high-frequency welding pads; and
the second welding pads are arranged in the second area and comprise direct current welding pads and low-frequency welding pads;
the packaging structure of the first welding pad is an inverted packaging structure, the packaging structure of the second welding pad is a bonding packaging structure, and the frequency of signals transmitted by the high-frequency welding pad is greater than that of signals transmitted by the low-frequency welding pad.
11. The package module of claim 10, further comprising:
the millimeter wave radar bare chip is fixedly arranged on the lead frame, and each first welding pad and each second welding pad are arranged on the surface of one side, away from the lead frame, of the millimeter wave radar bare chip;
the antenna structure is flip-chip welded on the first welding pads; and
the lead frame comprises a package pin arranged close to the millimeter wave radar bare chip; the packaging pin is connected with the second welding pad through a bonding wire;
wherein the millimeter wave radar die and the antenna structure are located on the same side of the lead frame.
12. The package module according to claim 10, wherein the frequency of the signal transmitted by the high frequency pad is greater than or equal to 30GHz, and the frequency of the signal transmitted by the low frequency pad is less than 30 GHz.
13. The package module of claim 11, further comprising:
the antenna structure is flip-chip bonded on the first bonding pad through the solder balls;
the size of the antenna structure can be adjusted according to the height of the solder balls.
14. The package module according to any one of claims 11 to 13, further comprising:
the supporting column is arranged between the lead frame and the antenna structure and used for supporting the antenna structure;
wherein the millimeter wave radar die and the package pins are disposed in a region where the antenna structure projects into the lead frame.
15. A radar system, comprising:
an external processor, and
the package module of any one of claims 1-14;
the external processor receives the radar data output by the packaging module and processes the radar data to generate communication data, driving assistance data, security check imaging data and/or human body vital sign parameter data.
16. The radar system of claim 15, wherein the package module is an AiP chip package module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921588510.XU CN210575925U (en) | 2019-09-23 | 2019-09-23 | Encapsulation module and radar system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921588510.XU CN210575925U (en) | 2019-09-23 | 2019-09-23 | Encapsulation module and radar system |
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| CN210575925U true CN210575925U (en) | 2020-05-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111865357B (en) * | 2020-08-05 | 2021-11-30 | 成都天锐星通科技有限公司 | AIP radio frequency front end |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111865357B (en) * | 2020-08-05 | 2021-11-30 | 成都天锐星通科技有限公司 | AIP radio frequency front end |
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